CN105428521B - 集成霍尔电流传感器的功率半导体模块 - Google Patents
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- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005070 sampling Methods 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims description 6
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- 229920006332 epoxy adhesive Polymers 0.000 claims description 6
- 229920006335 epoxy glue Polymers 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
一种集成霍尔电流传感器的功率半导体模块，包括输出电极、采样控制端子、底板、陶瓷基板、外壳，所述输出电极连接有平行于底板方向设置的输出电极臂，所述输出电极臂与陶瓷基板相连，所述输出电极臂上套有传感器磁芯，所述传感器磁芯具有一个朝上的磁芯开口，所述磁芯开口处插有一个引脚朝上的霍尔元件；所述外壳在位于磁芯开口上方的对应位置处设有插孔，所述霍尔元件的引脚从插孔中穿出。本发明将电流传感器集成在功率半导体模块的内部，增加了控制***的集成度、小型化程度以及稳定性，且降低了后续使用成本。
Description
技术领域
本发明涉及电力电子领域，具体涉及集成霍尔电流传感器的功率半导体模块。
背景技术
功率模块是功率电子电力器件如金属氧化物半导体(功率MOS管)、绝缘栅型场效应晶体管(IGBT)，快恢复二极管(FRD)按一定的功能组合封装成的电力开关模块，其主要用于电动汽车，光伏发电，风力发电，工业变频等各种场合下的功率转换。功率半导体模块的拓扑结构为单管、两单元、六单元等，可以根据需要组合成半桥、三相全桥等电路形式。在实际使用过程中，常常需要获取输出电流值。
传统功率半导体模块存在的一个缺陷就是不具备电流采样功能，不能对输出电流的大小直接进行测量，这样造成的问题就是，在需要测量输出电流时，需要在与交流输出电极相连的母排上安装电流传感器。从而将采样到的电信号传输给控制部分。但是，在母排上安装电流传感器占用空间较大，有时甚至需要将母排折弯来配合电流传感器的安装，这种方式不仅不利于***小型化，而且安装麻烦、成本较高，且响应速度较慢。
发明内容
发明目的：针对上述问题，本发明旨在提供集成霍尔电流传感器的功率半导体模块。
技术方案：一种集成霍尔电流传感器的功率半导体模块，包括输出电极、采样控制端子、底板、陶瓷基板、外壳，所述输出电极连接有平行于底板方向设置的输出电极臂，所述输出电极臂与陶瓷基板相连，所述输出电极臂上套有传感器磁芯，所述传感器磁芯具有一个朝上的磁芯开口，所述磁芯开口处插有一个引脚朝上的霍尔元件；所述外壳在位于磁芯开口上方的对应位置处设有插孔，所述霍尔元件的引脚从插孔中穿出。
进一步的，所述插孔的尺寸不大于磁芯开口的尺寸。
进一步的，所述霍尔元件的引脚与采样控制端子一起焊接在驱动PCB板上。
进一步的，所述霍尔元件在磁芯开口处使用环氧胶或者粘结胶固定。
进一步的，所述输出电极臂与陶瓷基板通过超声波焊接方式或者邦定铝线方式相连。
有益效果：本发明将霍尔电流传感器集成在功率半导体模块的内部，简化了电流传感器的安装方式，更有利于控制器的集成及功率半导体模块的保护。同时，霍尔电流传感器的测量精度较高、测量频率范围较广并具有良好的隔离效果，使用环氧胶或者粘结胶固定霍尔元件的位置既灵活方便，又保证了霍尔元件的牢固性。本发明增加了控制***的集成度、小型化程度以及稳定性，且降低了后续使用成本。
附图说明
图1是本发明的第一种连接方式的内部结构示意图；
图2是本发明的第二种连接方式的内部结构示意图；
图3是本发明的第一种连接方式的结构示意图；
图4是本发明的第二种连接方式的结构示意图。
具体实施方式
如图1所示，一种集成霍尔电流传感器的功率半导体模块，包括输出电极1、负电极2、正电极3、采样控制端子4、底板5、陶瓷基板6、外壳7，所述输出电极1连接有平行于底板5方向设置的输出电极臂8，所述输出电极臂8与陶瓷基板6相连，所述输出电极臂8上套有传感器磁芯9，使每相交流输出电极1通过一个传感器磁芯9。所述传感器磁芯9具有一个朝上的磁芯开口，磁芯的开口处为后续霍尔元件10的***位置，霍尔元件10的引脚朝上。
如图3所示，为了配合该霍尔元件10的***，所述外壳7在位于磁芯开口上方的对应位置处设有插孔11，所述霍尔元件10的引脚从插孔11中穿出。插孔11的尺寸不大于磁芯开口的尺寸。使得整个霍尔元件10能从插孔11中穿过。
霍尔元件10可以在功率半导体模块组装时***磁芯开口，再安装外壳；也可以在功率半导体模块组装完成后，在外壳7的插孔11处***，此时霍尔元件10与传感器磁芯9便组成了霍尔电流传感器；还可以先将霍尔元件10焊接在后续安装的驱动PCB板上，然后在功率半导体模块上安装驱动PCB板时，使霍尔元件10***到外壳7的插孔11处，与传感器磁芯9组成霍尔电流传感器。
为了防止霍尔元件10移位，霍尔元件10在磁芯开口处使用环氧胶或者粘结胶固定。环氧胶或者粘结胶可以在霍尔元件10***插孔11后从插孔11注入外壳7凝固，也可以先向插孔11内注入未固化的环氧胶或者粘结胶，再将霍尔元件10***插孔11，凝固后即可保证霍尔元件10的位置固定及后续连接的可靠性。
电流流经输出电极1并在输出电极1的周围产生磁场，霍尔元件10通过检测该磁场的磁感应强度得到对应的电流值，并转化为电压信号传输给控制电路，在电流异常时，由控制电路通过采样控制端子关断功率器件，从而保护功率器件。
霍尔元件10的引脚可直接与采样控制端子4一起焊接在驱动PCB板上，实现了快速采样及稳定可靠连接。
功率半导体模块的输出电极1与陶瓷基板6的连接可以如图1和图3所示，采用超声波焊接工艺连接；也可以如图2和图4所示，采用邦定粗铝线来实现连接。
本发明将霍尔电流传感器集成在功率半导体模块的内部，增加了控制***的集成度、小型化程度、以及稳定性，且降低了后续使用成本。
Claims (5)
1.一种集成霍尔电流传感器的功率半导体模块，包括输出电极(1)、采样控制端子(4)、底板(5)、陶瓷基板(6)、外壳(7)，所述输出电极(1)连接有平行于底板(5)方向设置的输出电极臂(8)，所述输出电极臂(8)与陶瓷基板(6)相连，其特征在于：所述输出电极臂(8)上套有传感器磁芯(9)，所述传感器磁芯(9)具有一个朝上的磁芯开口，所述磁芯开口处插有一个引脚朝上的霍尔元件(10)；所述外壳(7)在位于磁芯开口上方的对应位置处设有插孔(11)，所述霍尔元件(10)的引脚从插孔(11)中穿出。
2.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块，其特征在于，所述插孔(11)的尺寸不大于磁芯开口的尺寸。
3.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块，其特征在于，所述霍尔元件(10)的引脚与采样控制端子(4)一起焊接在驱动PCB板上。
4.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块，其特征在于，所述霍尔元件(10)在磁芯开口处使用环氧胶或者粘结胶固定。
5.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块，其特征在于，所述输出电极臂(8)与陶瓷基板(6)通过超声波焊接方式或者邦定铝线方式相连。
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| CN108922871B (zh) * | 2018-05-23 | 2024-03-29 | 杭州士兰微电子股份有限公司 | 半导体封装结构及其制造方法 |
| CN108682667B (zh) * | 2018-05-23 | 2024-03-29 | 杭州士兰微电子股份有限公司 | 半导体封装结构 |
| CN111562435A (zh) * | 2020-05-28 | 2020-08-21 | 南京国信能源有限公司 | 新型充电桩用直流电能表 |
| CN112564476A (zh) * | 2020-12-01 | 2021-03-26 | 复旦大学 | 集成电流采样与emi滤波的三相碳化硅功率半导体模块 |
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| CN1842711A (zh) * | 2003-08-26 | 2006-10-04 | 阿莱戈微***公司 | 电流传感器 |
| CN104134655A (zh) * | 2013-05-03 | 2014-11-05 | 英飞凌科技股份有限公司 | 具有集成电流传感器的功率模块 |
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| CN1842711A (zh) * | 2003-08-26 | 2006-10-04 | 阿莱戈微***公司 | 电流传感器 |
| CN104134655A (zh) * | 2013-05-03 | 2014-11-05 | 英飞凌科技股份有限公司 | 具有集成电流传感器的功率模块 |
| CN205141028U (zh) * | 2015-11-13 | 2016-04-06 | 扬州国扬电子有限公司 | 集成霍尔电流传感器的功率半导体模块 |
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Application publication date: 20160323 Assignee: No.55 Inst., China Electronic Science and Technology Group Corp. Assignor: YANGZHOU GUOYANG ELECTRONIC CO., LTD. Contract record no.: 2018320000201 Denomination of invention: Power semiconductor module integrated with Hall current sensor Granted publication date: 20171027 License type: Common License Record date: 20181012 |