CN104051401A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN104051401A
CN104051401A CN201410095780.2A CN201410095780A CN104051401A CN 104051401 A CN104051401 A CN 104051401A CN 201410095780 A CN201410095780 A CN 201410095780A CN 104051401 A CN104051401 A CN 104051401A
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sintering
electrode
wire
lead
chip
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CN201410095780.2A
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CN104051401B (zh
Inventor
梶原良一
中条卓也
新井克夫
谷藤雄一
冈浩伟
宝蔵寺裕之
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Renesas Electronics Corp
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Renesas Electronics Corp
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Abstract

本发明涉及半导体装置及其制造方法。本发明的解决的一个问题是提高半导体装置的可靠性。具有：管芯焊盘（6）、搭载于管芯焊盘（6）的SiC芯片（1）、对管芯焊盘（6）和SiC芯片（1）进行接合的多孔质的第1烧结Ag层（16）、以及覆盖第1烧结Ag层（16）的表面并且被形成为圆角状的加强树脂部（17）。进而，具有与SiC芯片（1）的源电极（2）电连接的源极引线（9）、与栅电极（3）电连接的栅极引线、与漏电极（4）电连接的漏极引线、以及覆盖SiC芯片（1）、第1烧结Ag层（16）及管芯焊盘（6）的一部分的密封体（14），加强树脂部（17）覆盖SiC芯片（1）的侧面（1c）的一部分。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造技术，例如涉及适用于作为管芯键合材料形成烧结Ag层的半导体装置的有效技术。
背景技术
在日本特开2009-94341号公报（专利文献1）中，公开了将半导体装置的管芯键合（die bonding）部通过最大粒径15μm～200μm左右的良好导电性Cu金属粉末和Ag的粘接层来金属性地接合，并且在连接层中使细微的空孔均匀地分散的构造。
另外，在日本特开2010-171271号公报（专利文献2）中，记载了将Si芯片和引线框经由以具有三维网状构造的Ag为结合材料的多孔状的高导电性金属的粘接层而通过金属键进行接合，并在与高分子树脂相接的半导体组装体的表面形成了包含Zn、Al的氧化物的皮膜的构造。
另外，在日本特开2011-249257号公报（专利文献3）中，记载有在烧结Ag膏中添加了与气氛无关地容易热分解的有机银络化物溶液的烧结银膏材料和使用了该材料的半导体芯片接合方法。
【专利文献1】日本特开2009-94341号公报
【专利文献2】日本特开2010-171271号公报
【专利文献3】日本特开2011-249257号公报
发明内容
为了有效地利用有限的资源/能量，要求电子装置（半导体装置）的低功耗化，作为功率器件，损失比Si（硅）更低的碳化硅（SiC）、氮化镓（GaN）等宽带隙半导体的开发得到了发展。其中特别是关于SiC器件（SiC芯片），以冷却***的简化为目的，讨论了在高温区中的使用，对于在搭载器件的封装体要求在高温工作时高的可靠性。
但是，目前，能够在长期内保证SiC器件的高温（200～250℃）工作的安装技术尚未确立，这是现实状况。在搭载了以往的Si器件（Si芯片）的封装体的高温规范的安装方式中，作为引线框使用对其表面实施了镀Ni的铜框，Si芯片的背面电极和引线框的芯片搭载部通过含铅的高温焊料来接合。
进而，通过使用了铝（Al）导线的超声波键合（bonding），对Si芯片的表面（主面）的源电极以及栅电极与各引线端子之间进行接线，在覆盖Si芯片、铝导线与管芯键合部，并且使引线框的管芯焊盘（die pad）和引线端子的一部分露出了的状态下，用包含低热膨胀填充物的密封树脂进行压铸模而安装。
另外，关于管芯键合构造，已知如上述专利文献1、2以及3所公开的那样，作为接合材料（管芯键合材料）用多孔状的（多孔质的）烧结Ag形成了接合层的构造。在上述专利文献1以及2中，采用如下接合构造：用贵金属构成半导体芯片的背面电极以及管芯焊盘的芯片搭载面，将接合层作为由使细微的空隙以5～70vol%的比例均匀地分散了的Ag的网格构造构成的多孔状的烧结Ag层，进而在细微的空孔（多孔状）部分中填充了热硬化性的树脂。
此处，关于组装半导体的金属部件（例如引线框等），其大部分由有效地传递电和热的铜（Cu）形成，在要求耐热性的封装体的情况下，一般在各种接合面形成有镀Ni膜。
在树脂密封型封装体（半导体装置）中，采用如下构造：在实施了该镀Ni的管芯焊盘上，通过接合层厚度20～100μm的铅焊料对半导体芯片进行管芯键合，其周围用环氧密封树脂覆盖。
在这样的构造的半导体装置中，在作为半导体芯片采用宽带隙半导体芯片，并使工作温度高达200℃以上的情况下，由于引线框与密封树脂之间的剥离，对半导体芯片与管芯焊盘之间的柔软的铅焊料的接合部施加大的热变形，通过短的重复的温度循环来在接合部产生贯通裂纹，有时导致电特性提前变成不良。
进而，作为上述铅焊料的代替技术，即使采用了如上述专利文献1、2以及3所公开那样的用烧结Ag层进行接合的构造，但在烧结Ag的接合层的厚度薄的情况下，将产生由于半导体芯片与管芯焊盘之间的热膨胀差，对烧结Ag的接合部施加大的热变形，而在短期间内产生贯通裂纹这样的问题。
另外，为了避免该贯通裂纹的问题，考虑增大烧结Ag的接合层的厚度，但为了使接合层变厚，需要提高所使用的烧结Ag膏的粘度。此时，由于在搭载芯片时从芯片下压出的烧结Ag膏而形成的圆角的表面为凹凸形状，在剥离了密封树脂之后在接近管芯焊盘的圆角的前端的附近部产生应力集中而容易成为裂纹产生的起点，并产生即使在使接合层变厚了的情况下温度循环寿命仍短的半导体装置这样的问题。
其结果，半导体装置的可靠性降低。
在本申请中公开的实施方式的目的在于提供一种能够提高半导体装置的可靠性的技术。
其他问题和新的特征根据本说明书的记述以及附图将更加明确。
根据一个实施方式的半导体装置具有：芯片搭载部；宽带隙半导体芯片，搭载于芯片搭载部；多孔质的第1烧结Ag层，接合芯片搭载部和宽带隙半导体芯片；以及第1树脂部，覆盖第1烧结Ag层的表面，并且被形成为圆角状，所述第1树脂部覆盖宽带隙半导体芯片的侧面的一部分。
根据一个实施方式，能够提高半导体装置的可靠性。
附图说明
图1是透过树脂部而示出实施方式1的半导体装置的构造的一个例子的俯视图。
图2是示出沿着图1所示的A-A线切断了的构造的剖面图。
图3是示出图1所示的半导体装置的烧结Ag层形成时的烧结Ag层的表面的构造的一个例子的部分示意图。
图4是示出图1所示的半导体装置的第1树脂部形成时的接合层的构造的一个例子的部分剖面图。
图5是示出图1所示的半导体装置的接合层的圆角形状的部分剖面图。
图6是示出在使树脂浸渍到图1所示的半导体装置的接合层的情况下的效果的图。
图7是示出图1所示的半导体装置的组装步骤的一个例子的流程图。
图8是透过树脂部而示出实施方式1的第1变形例的半导体装置的构造的俯视图。
图9是示出沿着图8所示的A-A线切断了的构造的剖面图。
图10是示出图8所示的半导体装置的组装步骤的一个例子的流程图。
图11是示出实施方式1的第2变形例的半导体装置的构造的剖面图。
图12是示出图11所示的半导体装置的组装步骤的一个例子的流程图。
图13是示出实施方式1的第3变形例的半导体装置的构造的剖面图。
图14是示出图13所示的半导体装置的组装步骤的一个例子的流程图。
图15是透过树脂部而示出实施方式2的半导体装置的构造的一个例子的俯视图。
图16是示出沿着图15所示的A-A线切断了的构造的剖面图。
图17是示出图15所示的半导体装置的半导体芯片的第1电极的导线接合部的构造的一个例子的部分俯视图。
图18是示出沿着图17所示的A-A线切断了的构造的部分剖面图。
图19是示出图15所示的半导体装置的组装步骤的一个例子的流程图。
图20是透过树脂部而示出实施方式2的变形例的半导体装置的构造的俯视图。
图21是示出沿着图20所示的A-A线切断了的构造的剖面图。
【符号说明】
1：SiC芯片（宽带隙半导体芯片）；1a：主面；1b：背面；1c：侧面；1d：接触膜；1e：基底膜；1f：贵金属膜；1g：主电极；1h：背面电极；2：源电极（第1电极）；3：栅电极（第3电极）；4：漏电极（第2电极）；5：钝化膜；6：管芯焊盘（芯片搭载部）；6a：上表面（芯片搭载面）；6b：下表面；7：漏极引线（第2引线）；8：源键焊盘；9：源极引线（第1引线）；10：栅键焊盘；11：栅极引线（第3引线）；12、13：镀Ni膜；14：密封体（第3树脂部）；15：镀Ag膜（第1贵金属镀膜）；16：第1烧结Ag层；16a：圆角部；16b：未填充部；16c：纵裂纹；17：加强树脂部（第1树脂部）；18、19：铝导线；18a：切口部；20：半导体封装（半导体装置）；21：引线框；22：第1烧结Ag膏；23：加强树脂（第1树脂）；24：半导体封装（半导体装置）；25、26：铜导线；27：镀Ag；28：镀焊料部；29：半导体封装（半导体装置）；30：加强树脂部（第2树脂部）；31：加强树脂（第2树脂）；32：半导体封装（半导体装置）；33：有机Zn膜；34：有机Zn化合物溶液；35：半导体封装（半导体装置）；36：第2烧结Ag层；37：第2烧结Ag膏；38：半导体封装（半导体装置）；39：主电极用引线；40：主电极用键合焊盘；41：背面电极用引线；42：背面电极用键合焊盘；43：高温无Pb焊料；44、45：无Pb焊料膜。
具体实施方式
在以下的实施方式中，除了特别需要的时候之外，原则上不重复相同或者同样的部分的说明。
进而，在以下的实施方式中，为便于说明，在需要时，分割为多个部分或者实施方式来进行说明，除了特别明示的情况以外，它们并不是相互无关，一个处于另一个的部分或者全部的变形例、详细情况、补充说明等关系。
另外，在以下的实施方式中，在提及要素的数量等（包括个数、数值、量、范围等）的情况下，除了特别明示的情况以及原理上明确地限定于特定的数量的情况等以外，不限于该特定的数量，既可以是特定的数量以上也可以是以下。
另外，在以下的实施方式中，关于其构成要素（还包括要素步骤等），除了特别明示的情况以及原理上明确为必须的情况等以外，当然不一定是必须的。
另外，在以下的实施方式中，关于构成要素等，在称为“由A构成”、“由A组成”、“具有A”、“包括A”时，除了特别明示为仅该要素的情况等以外，当然不排除其以外的要素。同样地，在以下的实施方式中，在提及构成要素等的形状、位置关系等时，除了特别明示了的情况以及原理上明确地认为并非如此的情况等以外，包括实质上近似或者类似于其形状等的部分等。其关于上述数值以及范围等也是同样的。
以下，根据附图，详细说明实施方式。另外，在用于说明实施方式的所有附图中，对具有同一功能的部件附加同一符号，省略其反复的说明。另外，为了易于理解附图，即使在俯视图中，也有时附加阴影线。
（实施方式1）
图1是透过树脂部而示出实施方式1的半导体装置的构造的一个例子的俯视图，图2是示出沿着图1所示的A-A线切断了的构造的剖面图，图3是示出图1所示的半导体装置的烧结Ag层形成时的烧结Ag层的表面的构造的一个例子的部分示意图，图4是示出图1所示的半导体装置的第1树脂部形成时的接合层的构造的一个例子的部分剖面图。另外，图5是示出图1所示的半导体装置的接合层的圆角形状的部分剖面图，图6是示出在使树脂浸渍到图1所示的半导体装置的接合层的情况下的效果的图。
本实施方式1的半导体装置是搭载了在高温（200～250℃）下工作的宽带隙半导体芯片的装置。另外，本实施方式1的上述宽带隙半导体芯片是在主面和背面分别具有电极的纵型半导体芯片，在本实施方式1中，举出将晶体管器件安装到树脂密封型的半导体封装体中的情况为例子来进行说明。
另外，在本实施方式1中，作为上述宽带隙半导体芯片，举出由SiC（碳化硅）构成的半导体芯片（也称为SiC器件）的情况来进行说明，但上述宽带隙半导体芯片也可以是由GaN（氮化镓）等构成的半导体芯片。
如图1以及图2所示，在本实施方式1的半导体封装体（半导体装置）20中，搭载了作为SiC器件的SiC芯片（宽带隙半导体芯片）1。SiC芯片1具有主面1a、其相反侧的背面1b、以及配置于主面1a与背面1b之间的位置的4个侧面1c，主面1a是例如2.5mm×2.5mm的大小。进而，SiC芯片1的厚度是例如0.35mm。
另外，在SiC芯片1的主面1a形成了作为最外表面由Al（铝）膜构成的主电极的源电极（第1电极）2，另一方面，在背面1b形成了最外表面由Au（金）或者Ag（银）膜构成的多层膜构造的漏电极（第2电极）4。另外，在主面1a形成了面积比源电极2小的栅电极（第3电极）3，该栅电极3的最外表面也由Al膜构成。
另外，在主面1a的电极之间和芯片外周部，形成了作为保护膜的钝化膜5。
这样的SiC芯片1搭载于作为芯片搭载部的管芯焊盘6的上表面（芯片搭载面）6a。
另外，在本实施方式1的半导体封装体20中，在管芯焊盘6的上表面6a与SiC芯片1之间，设置了接合管芯焊盘6与SiC芯片1的多孔状的（多孔质的）第1烧结Ag层16，作为管芯键合材料。
另外，SiC芯片1的主面1a的源电极2经由作为金属导线的一个例子的由铝构成的导线（以下称为铝导线）18与源极引线（第1引线）9电连接。此时，铝导线18与和源极引线9一体地形成的源键焊盘8电连接，在本实施方式1的半导体封装体20中，由于对源电极2施加比较大的电流，所以通过2根铝导线18来将源电极2和源极引线9电连接。
另外，主面1a的栅电极3经由比铝导线18细的铝导线19与栅极引线（第3引线）11电连接。此时，铝导线19与和栅极引线11一体地形成的栅键焊盘10电连接。
另一方面，背面1b的漏电极4经由第1烧结Ag层16与管芯焊盘6电连接，进而与和该管芯焊盘6一体地形成的漏极引线（第2引线）7电连接。
另外，在半导体封装体20中，管芯焊盘6、源极引线9、源键焊盘8、漏极引线7、栅极引线11以及栅键焊盘10由以Cu（铜）为主成分的材料构成。进而，在管芯焊盘6以及漏极引线7各自的表面，形成了镀Ni膜12，并且，在源极引线9、源键焊盘8、栅极引线11以及栅键焊盘10各自的表面也形成了镀Ni膜13。即，在包括管芯焊盘6的各引线部件各自的表面形成了镀Ni膜。
因此，SiC芯片1的主面1a的源电极2、和实施了镀Ni膜13的源键焊盘8通过超声波键合2根铝导线18来电连接。另外，主面1a的栅电极3、和实施了镀Ni膜13的栅键焊盘10通过超声波键合铝导线19来接线并电连接。
另外，在管芯焊盘6的上表面6a的芯片搭载区域的表面处，在镀Ni膜12上形成了镀Ag膜（第1贵金属镀膜）15。此处的镀Ni膜12的膜厚是例如2.0μm，另一方面，镀Ag膜15的膜厚是例如5.0μm，但是，这些膜厚不限于上述数值，能够自由地选择。
另外，铝导线18、19各自的表面也可以用Au膜或者Ag膜等第2贵金属镀膜覆盖，由此，能够提高铝导线18、19与SiC芯片1的电极的连接部、与各引线的连接部中的各自的连接强度。
此处，在本实施方式1的半导体封装体20中，在管芯焊盘6上隔着对粘度高的烧结Ag膏不加压地进行烧结而形成的多孔质的（多孔状的）第1烧结Ag层16搭载了SiC芯片1。此时，在SiC芯片1的背面1b，形成了最外表面由Au或者Ag膜构成的多层膜构造的漏电极4，另一方面，在管芯焊盘6的上表面6a，形成了镀Ag膜15，所以背面1b的漏电极4的Au或者Ag膜与管芯焊盘6上的镀Ag膜15金属接合。
另外，用作管芯键合材料的第1烧结Ag层16的厚度需要50μm以上，此处设为150μm厚度。另外，在20～60vol%的范围内调整多孔状的第1烧结Ag层16的空孔率，此处，设为例如40vol%。另外，关于SiC芯片1的背面1b的漏电极4，与烧结Ag的相互扩散反应少，多层膜构造被原样地保持为初始的状态。
另外，在本实施方式1的半导体封装体20中，在第1烧结Ag层16上和其附近，形成了加强树脂部（第1树脂部）17，该加强树脂部17由对液状的树脂进行涂覆/硬化处理而形成的聚酰胺树脂、聚酰亚胺树脂、或者玻化温度为190℃以上的高耐热的环氧树脂构成。
即，加强树脂部17被形成为在俯视中在SiC芯片1的整个周围覆盖第1烧结Ag层16的表面，并且相对于管芯焊盘6的上表面6a的镀Ag膜15被形成为圆角状。
进而，加强树脂部17覆盖SiC芯片1的各侧面1c各自的一部分。即，加强树脂部17被形成为圆角状，圆角的上端部到达SiC芯片1的各侧面1c，还具有作为第1烧结Ag层16的保护层的功能。
另外，形成加强树脂部17的树脂还浸渍到第1烧结Ag层16的空孔部分的一部分，提高第1烧结Ag层16的强度（刚性），但并未浸渍到第1烧结Ag层16的所有空孔部分。
另外，在半导体封装体20中，SiC芯片1、铝导线18、19、第1烧结Ag层16、加强树脂部17、源键焊盘8、栅键焊盘10以及管芯焊盘6的一部分被密封体（第3树脂部）14覆盖。
即，以使管芯焊盘6的下表面6b和各引线的一部分（源极引线9、漏极引线7、栅极引线11）为露出的状态的方式，密封体14覆盖整体，在密封体14的安装面侧，管芯焊盘6的下表面6b露出。另外，密封体14由例如环氧系的热硬化性树脂等构成。
接下来，使用图3～图5，详细说明在本实施方式1的半导体封装体20中设置的加强树脂部17。
在图3所示的构造中，SiC芯片1通过对由粒径0.5～2.0μm的Ag粒子构成的膏进行烧成而形成的多孔质的（多孔状的）第1烧结Ag层16被金属接合到形成有图5所示的镀Ag膜15的管芯焊盘6。另外，第1烧结Ag层16在SiC芯片1的外周形成了圆角部16a。
关于圆角部16a的剖面形状，如图3所示，通过从芯片下压出的粘度高的烧结Ag膏来形成凹凸形状，进而在烧结过程中保持初始形状而进行烧结，所以成为具有凸部P的形状。
对该圆角部16a涂覆液状树脂并进行硬化处理，如图4所示地使其浸入到多孔状的第1烧结Ag层16内而形成树脂浸渍了的第1烧结Ag层16，同时，在第1烧结Ag层16的圆角部16a上通过表面张力的效应以在凹部中集中了大量的树脂的状态形成了加强树脂部17。
如图3所示，关于圆角部16a上的图4的加强树脂部17的厚度，以使连接凸部P的两侧的圆角部16a上的2点Q、R的直线中的处于最下端的第1直线L0平行移动至圆角部16a的凸部P的前端的第2直线L1为基准，设为第2直线L1至圆角部16a、管芯焊盘6的距离的1/4以上的厚度。进而，在圆角部16a中将从第2直线L1最凹陷的部位的树脂层的厚度设为10μm以上。
另外，如图4所示，如果涂覆液状的树脂，进而进行树脂的硬化处理，则在第1烧结Ag层16内，也存在树脂无法浸入的未填充部16b。
另外，图5是示出在芯片侧面的附近存在初始的纵裂纹16c的第1烧结Ag层16的圆角部16a处形成了加强树脂部17的构造的图。如图5所示，在SiC芯片1的背面1b形成了钛等的接触膜1d、镍等的基底膜1e、Au或者Ag等的贵金属膜1f。
进而，在管芯焊盘6的上表面6a的芯片搭载区域中形成了镀Ag膜15，SiC芯片1和管芯焊盘6通过第1烧结Ag层16接合。另外，在SiC芯片1的侧面1c的第1烧结Ag层16的圆角部16a，存在在烧结过程中形成的初始的纵裂纹16c，在纵裂纹16c的内部、以及相对上述定义的第1直线L1而凹陷的第1烧结Ag层16的区域以及表面形成了加强树脂部17。
详细而言，在管芯键合工序中，在管芯焊盘6上配置了半导体芯片时，所压出的烧结Ag膏在接近芯片侧面的区域形成凹部，由于膏烧结过程的体积收缩而在芯片侧面的附近容易形成纵向的裂纹（纵裂纹16c），该封装完成时的初始的纵裂纹16c减弱基于圆角的接合部的加强效果。
其结果，产生密封树脂剥离，使之后的接合部的温度循环测试的耐性降低这样的问题。
另外，初始的纵裂纹16c还存在使芯片背面的电极的耐湿可靠性降低这样的问题。
因此，在本实施方式1的半导体封装体20中，采用如下构造：用厚度150μm左右的第1烧结Ag层16对SiC芯片1和由Cu合金构成的管芯焊盘6进行管芯键合，在成为凸形状的第1烧结Ag层16的圆角部16a的凹部、SiC芯片1的侧面1c的附近的纵裂纹16c中，填充高耐热/高强度的树脂来进行加强。
由此，即使在SiC芯片1的工作温度为200～250℃的高温并且处于密封树脂（密封体14）与管芯焊盘6剥离了的状态的情况下，由SiC和Cu的热膨胀差而产生的热应力不会集中到第1烧结Ag层16的圆角部16a的特定部位，而能够延缓圆角部16a中的裂纹产生时期。
其结果，能够大幅提高管芯键合部（SiC芯片1和管芯焊盘6的接合部）的温度循环测试中的可靠性，能够提高半导体封装体20的可靠性。
进而，由于加强树脂部17覆盖了SiC芯片1的侧面1c的一部分，所以能够提高SiC芯片1和加强树脂部17的紧贴度。即，SiC（碳化硅）和烧结Ag的粘接强度并不那么高，所以通过加强树脂部17的圆角的上端部到达SiC芯片1的侧面1c，能够提高SiC芯片1和加强树脂部17的紧贴度，并能够谋求SiC芯片1与第1烧结Ag层16的界面处的剥离的抑制化。
其结果，能够提高半导体封装体20的可靠性。
另外，即使在第1烧结Ag层16的圆角部16a的芯片侧面的附近形成了纵裂纹16c的情况下，由于用加强树脂部17掩埋了纵裂纹16c和该圆角部16a的上部以及附近的第1烧结Ag层16内的空孔部分，所以能够使水分不直接接触到芯片侧面的多层电极膜的界面。
即，即使在密封树脂（密封体14）与管芯焊盘6剥离而高湿度的外界空气浸入至圆角部16a的周围的情况下，也不会使水分直接接触到芯片侧面的多层电极膜的界面，所以能够抑制由于氧化、腐蚀等作用而多层电极膜的界面的强度降低并剥离并且管芯键合部的耐湿可靠性降低。
进而，在第1烧结Ag层16的纵裂纹16c中埋入加强树脂部17的树脂，所以也能够降低来自纵裂纹16c的外界空气、水分的浸入，能够抑制SiC芯片1的背面1b的电极的耐湿可靠性降低。
另外，半导体封装体20采用使液状树脂浸渍到多孔状的第1烧结Ag层16内并用树脂覆盖了多孔状的内部的Ag骨架的表面的构造，所以即使在250℃的高温下保持几千小时的长期间的情况下，Ag的表面扩散所致的烧结Ag的组织变化也被抑制，能够提高管芯键合部的高温可靠性。
此处，图6是在用作管芯键合材料的多孔状的烧结Ag层中，使树脂浸渍到其空孔部分（例如环氧系树脂）的情况A和未浸渍的情况B下，测定进行期望次数的温度循环时的剪切强度而得到的结果。如图6所示，得到了这样的结果：在多孔质的烧结Ag层中，在使树脂浸渍到空孔部分的情况A下，相比于在空孔部分中未浸渍树脂的情况B，相对温度循环数的剪切强度变高。
由此，用150μm的厚的多孔状的第1烧结Ag层16形成管芯键合部，并用10μm以上的厚度的高耐热/高强度的加强树脂部17覆盖第1烧结Ag层16的圆角部16a的凹部的应力集中的部位而加强，从而即使在搭载了在200～250℃的高温区域中工作的SiC芯片1的半导体封装体20中，也能够提高其可靠性。
即，能够实现具备搭载在200～250℃的高温区域中工作的SiC芯片1，并且温度循环可靠性、高温/高湿可靠性以及高温可靠性优良的管芯键合部的半导体封装体20。
其结果，能够实现可靠性长期地优良的树脂密封型的半导体封装体20。
另外，关于图2所示的第1烧结Ag层16的厚度，还能够通过提高烧结Ag膏的粘度来使其变厚超过500μm，但考虑材料成本而将400μm设为上限。另外，在接合厚度是50μm以下的情况下，即使进行了充分的树脂加强，也得不到必要的温度循环可靠性，所以将下限设为50μm。
另外，在本实施方式1的半导体封装体20中，第1烧结Ag层16是多孔状（多孔质）的构造，所以能够通过自身的低弹性的特性吸收由于与SiC芯片1的热膨胀差而产生的热变形，能够避免背面1b的电极与烧结Ag层的接合界面由于热疲劳破坏等而损伤。
另外，能够避免SiC芯片1的背面1b的电极与烧结Ag层的接合界面由于热疲劳破坏等而损伤，所以能够确保管芯焊盘6与SiC芯片1之间的电流的通电路线。由此，即使反复进行超过200℃的高温工作，也能够不发生上述电极的接合部的短时间内的断线所致的不良情况，其结果，能够长期确保作为封装产品的可靠性。
另外，在图2所示的构造中，示出了加强树脂部17由1层构成的情况，但也可以在烧结Ag层的表面形成与金属的紧贴性优良的聚酰亚胺系的第1加强树脂部，进而在其上形成环氧系的第2加强树脂部而成为2层构造。在上述2层构造中，容易进行与相接于各层的材料的配合，容易调整为最佳厚度，通过设为2层构造，能够在半导体装置中得到更高的可靠性。
接下来，说明本实施方式1的半导体装置（半导体封装体20）的组装。图7是示出图1所示的半导体装置的组装步骤的一个例子的流程图。
此处，依照图7所示的流程，并且使用图1以及图2进行说明。
首先，作为部件，准备在全面实施了镀Ni并且在其上实施了部分镀Ag而得到的引线框21、以及在背面1b的漏电极4的表面形成Au或者Ag等贵金属膜并且用Al膜构成主面1a的源电极2以及栅电极3各自的表面而得到的纵型的SiC芯片（宽带隙半导体芯片）1。
此处，引线框21具备具有上表面6a的管芯焊盘6、配置于管芯焊盘6的附近的源极引线9以及栅极引线11、和与管芯焊盘6连结并且与管芯焊盘6一体地形成的漏极引线7。
接下来，在引线框21的管芯焊盘6的上表面6a的镀Ag区域上，与所搭载的芯片尺寸对应地，通过供料器供给以细微的Ag粒子和挥发性的溶剂为主成分的第1烧结Ag膏（烧结Ag膏）22。关于此时的供给形状，按照在搭载SiC芯片1并压入时所压出的第1烧结Ag膏22在芯片角部和边处形成相同尺寸的圆角那样的图案（例如在芯片角部和中央的5个点形成点的图案）来供给。
另外，用安装器以从管芯焊盘6的上表面6a起达到规定的高度的方式，压入而搭载SiC芯片1。此时，第1烧结Ag膏22的供给量为如下程度的适当的量：芯片下被第1烧结Ag膏22全面掩埋，进而SiC芯片1的侧面1c被所压出的第1烧结Ag膏22埋到大致中间。如果过多，则烧结Ag蔓延至SiC芯片1的主面（上表面）1a，如果过少，则无法形成充分的大小的圆角，所以供给上述适当的量。
在搭载芯片之后，用大气气氛的烘箱，在200～300℃、例如250℃-1小时的条件下，以无加压的状态进行第1烧结Ag膏22的烧成处理，形成第1烧结Ag层16。另外，关于在加热过程中溶剂成分、微小的Ag粒子附着到了表面的有机成分，由于挥发、热分解/氧化所致的分解而消失，在细微的Ag粒子接触到的部位，由于Ag的表面扩散而粒子彼此开始连结，形成Ag的网格，经由第1烧结Ag层16中的多孔状（多孔质）的Ag的网格将SiC芯片1和管芯焊盘6金属性地接合。
接下来，使用粗的铝导线18通过超声波键合，对芯片上的表面由Al膜构成的源电极2、与实施了镀Ni膜13的源极引线9的源键焊盘8之间进行接线。进而，使用细的铝导线19通过超声波键合对同样地表面由Al膜构成的栅电极3、与实施了镀Ni膜13的栅极引线11的栅键焊盘10之间进行接线。
即，通过超声波键合经由粗的铝导线18对SiC芯片1的主面1a的源电极2和源极引线9进行电连接（接线），进而通过超声波键合经由比铝导线18细的铝导线19对主面1a的栅电极3和栅极引线11进行电连接（接线）。
接下来，在作为管芯键合部的烧结Ag圆角的第1烧结Ag层16的表面上，用供料器供给（涂覆）作为液状的第1高耐热/高强度树脂的加强树脂（第1树脂）23。此时，使加强树脂23浸渍到多孔状的第1烧结Ag层16内，并且在圆角上的凹部处加强树脂23的树脂层达到规定的厚度以上。
此时，以覆盖SiC芯片1的各侧面1c各自的一部分的方式，供给加强树脂23。即，以使加强树脂23的圆角的上端部（芯片侧端部）达到SiC芯片1的各侧面1c的方式，供给加强树脂23。
在供给之后，在与所供给的加强树脂23符合的最佳的硬化条件下进行加热处理并硬化处理，形成覆盖第1烧结Ag层16的表面，并且呈圆角状的加强树脂部17。
由此，加强树脂部17形成为覆盖SiC芯片1的各侧面1c各自的一部分。即，以使加强树脂部17的圆角的上端部（芯片侧端部）到达SiC芯片1的各侧面1c的方式，形成加强树脂部17。
接下来，将安装了的引线框21设置到树脂成型模具中，之后使用包含低热膨胀填充物的环氧系的密封树脂来进行压铸模，加热保持并进行硬化处理而形成密封体14。
在树脂密封之后，根据需要对金属露出部（此处为源极引线9、漏极引线7以及栅极引线11）进行镀焊料。但是，关于上述镀焊料的形成，也可以不一定进行。
接下来，对引线框21进行切断成型而作为功率半导体封装体的半导体封装体20完成。即，从引线框21将源极引线9、漏极引线7以及栅极引线11切断分离，并且对这些引线进行期望的弯曲成型而半导体封装体20的组装完成。
根据本实施方式1的半导体装置的制造方法，能够用可量产的工艺制造在基于烧结Ag层的管芯键合部的应力的集中部位形成了高耐热/高强度的加强树脂部17的构造，所以能够组装即使在SiC芯片1的工作温度是200～300℃的高温区域中也长期不产生特性不良等不佳状况的具有高的可靠性的树脂密封型的半导体封装体20。此时，能够以与以往产品等同的生产率来量产本实施方式1的半导体封装体20。
另外，在本实施方式1中，说明了在导线接合之后对管芯键合加强用的加强树脂23进行涂覆/硬化处理的情况，但该对加强树脂23进行涂覆/硬化处理的工序也可以在管芯键合之后（导线接合之前）进行。特别地，在未进行导线接合部的树脂加强的产品或者用金属部件加强的产品中，不论采用什么样的工序，生产率几乎不会产生差异。
另外，也可以在针对对管芯焊盘6和键合焊盘（bond pad）实施了部分镀Ag而得到的引线框21供给第1烧结Ag膏22之前，增加进行加热UV照射处理而使镀Ag面氧化的工序。根据以下这2点：如果进行了该加热UV照射处理则能够对引线框21的表面的有机污染物进行分解去除而清洁化、以及镀Ag的氧化膜在烧结Ag膏的烧结温度下被还原时被纳米粒子化而发挥促进与膏的Ag粒子的烧结接合的作用，能够进一步提高烧结Ag层与引线框之间的接合强度。
另外，还能够采用如下工序：使涂覆加强树脂23并进行硬化处理的工序停留至半硬化，并在对环氧系的密封树脂进行硬化处理的工序中进行本硬化。如果使加强树脂23停留于半硬化状态而对密封树脂进行模成型，则加强树脂23与密封树脂之间的紧贴力提高，圆角附近的密封树脂不会与管芯焊盘6、烧结Ag层剥离，所以能够进一步提高管芯键合部的温度循环测试的可靠性。
接下来，说明本实施方式1的变形例。
图8是透过树脂部而示出实施方式1的第1变形例的半导体装置的构造的俯视图、图9是示出沿着图8所示的A-A线切断了的构造的剖面图。
图8以及图9所示的第1变形例是示出与实施方式1的图1以及图2所示的半导体封装体20大致同样的构造的半导体封装体24的图，此处，仅说明半导体封装体24的与半导体封装体20的相异点。
在本第1变形例的半导体封装体24中，首先，作为对SiC芯片1和引线进行电连接的导线，使用在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线（是金属导线的一个例子、由铜（Cu）构成的导线）25、26，通过超声波键合来连接各根导线。或者，也可以作为在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25、26的替代，使用Ag导线（是金属导线的一个例子、由银（Ag）构成的导线）。
此处，说明使用了在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25、26的情况。即，对SiC芯片1的源电极2和源极引线9进行电连接的导线是粗的铜导线25，对SiC芯片1的栅电极3和栅极引线11进行电连接的导线是比铜导线25更细的铜导线26，提高了各个导线和导线接合部的耐热。
另外，铜导线25、26的表面被Au膜或者Ag膜等贵金属镀膜覆盖。表面被贵金属镀膜覆盖的铜导线25、26能够通过超声波键合来接线，所以具有量产性优良这样的优点。
另外，SiC芯片1的主面1a的源电极2和栅电极3各自的最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成，因此，表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26的各自与源电极2、栅电极3的连接性提高。
进而，由于使用表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26，所以在连接有铜导线25的源极引线9的源键焊盘8、以及连接有铜导线26的栅极引线11的栅键焊盘10各自的焊盘的表面中形成了镀Ag27。
由此，能够提高表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26的各自与上述各个焊盘的连接性。
另外，在从密封体14露出的金属部分、即包括管芯焊盘6的下表面6b的一部分、源极引线9、漏极引线7和栅极引线11各自的表面形成了镀焊料部28。另外，各引线的端面被实施了切断加工，所以成为在端面处露出芯的铜引线、镀Ni、以及镀焊料各自的剖面的状态。
关于本第1变形例的半导体封装体24的其他构造，与实施方式1的半导体封装体20相同，所以其重复说明省略。
在本第1变形例的半导体封装体24中，管芯键合构造是与图1的半导体封装体20相同的结构，所以关于管芯键合部的长期可靠性等效果，能够得到与通过图1的半导体封装体20得到的效果同样的效果。
进而，通过相比铝导线为高导电且高热传导、并且低热膨胀的Ag或者Cu导线的超声波键合来对流过大的电流的源电极2与源极引线9之间进行了接线，所以能够减小来自导线自身的发热，能够通过来自SiC芯片1的表面的散热性的提高，进一步抑制导线接合部的温度上升。
其结果，能够提高导线接合部的温度循环测试的可靠性，能够进一步减小半导体封装体24的电力损失，能够实现高性能且高可靠的树脂密封型的半导体封装体24。
接下来，说明本第1变形例的半导体封装体24的组装。图10是示出图8所示的半导体装置（半导体封装体24）的组装步骤的一个例子的流程图。半导体封装体24的组装与图7所示的半导体封装体20的组装大致相同，所以使用图8～图10仅说明其相异点。
半导体封装体24的组装的与半导体封装体20的组装不同的点仅为导线接合工序。
在半导体封装体24的组装的导线接合工序中，首先，使用Ag导线或者实施了Ag膜等贵金属镀膜的粗的铜导线25，通过超声波键合，对SiC芯片1的主面1a的最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成而得到的源电极2、与实施了镀Ag27的源极引线9的源键焊盘8之间进行接线。
进而，使用Ag导线或者实施了Ag膜等贵金属镀膜的、比铜导线25更细的铜导线26，通过超声波键合，对最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成而得到的栅电极3、与实施了镀Ag27的栅极引线11的栅键焊盘10之间进行接线。
由此，在半导体封装体24的导线接合中，也能够使用铜导线25、26对源电极2与源极引线9之间进行接线，进而对栅电极3与栅极引线11之间进行接线。
在本第1变形例的半导体封装体24的组装中，也能够得到与图7所示的半导体封装体20的组装同样的效果，所以其重复说明省略。
接下来，说明本实施方式1的第2变形例。
图11是示出实施方式1的第2变形例的半导体装置的构造的剖面图。
图11所示的第2变形例是示出与实施方式1的图1以及图2所示的半导体封装体20大致同样的构造的半导体封装体29的例子，此处，仅说明半导体封装体29的与半导体封装体20的相异点。
在图11所示的本第2变形例的半导体封装体29中，SiC芯片1的主面1a的源电极2和源极引线9通过铝导线18电连接，进而在源电极2上，与铝导线18的导线接合部被加强树脂部（第2树脂部）30覆盖。
即，成为如下构造：通过加强树脂部30覆盖SiC芯片1的主面1a的源电极2处的导线接合部及其周边部，包括导线接合部的间隙状的切口部18a的前端部附近被埋入到加强树脂部30内，由此，加强了铝导线18的导线接合部的连接而提高了连接强度。
另外，加强树脂部30优选由与铝的粘接性优良的高耐热/高强度的酰亚胺系树脂构成。由此，能够缓和向铝导线18的接合界面的端部的应力集中，进而酰亚胺系树脂与环氧密封树脂的紧贴性也优良，所以对铝导线18的导线接合部施加由加强树脂部30的收缩所致的按压力，从而能够在导线接合部处降低裂纹的产生以及延缓裂纹的发展速度。
其结果，能够提高铝导线18的导线接合部的功率循环测试的可靠性、管芯键合部的高温/高湿可靠性，进而提高温度循环测试的可靠性，由此，能够实现长期可靠性优良的树脂密封型的半导体封装体29。
另外，关于半导体封装体29中的其他构造和其他效果，与实施方式1的半导体封装体20相同，所以其重复说明省略。
接下来，说明本第2变形例的半导体封装体29的组装。图12是示出图11所示的半导体装置的组装步骤的一个例子的流程图。半导体封装体29的组装与图7所示的半导体封装体20的组装大致相同，所以使用图11以及图12仅说明其相异点。
半导体封装体29的组装中的与半导体封装体20的组装不同的点仅为树脂涂覆/树脂硬化工序。
即，在进行了基于超声波键合的导线接合之后的树脂涂覆/树脂硬化工序中，在第1烧结Ag层16上以及铝导线18的导线接合部上，涂覆液状的高耐热/高强度树脂，并对该树脂进行加热而硬化处理。
具体而言，在第1烧结Ag层16上涂覆（供给）加强树脂23，并且使加强树脂23浸渍到第1烧结Ag层16的空孔部分。进而，在源电极2的导线接合部上涂覆（供给）加强树脂（第2树脂）31，之后对加强树脂23以及加强树脂31进行加热，从而形成覆盖第1烧结Ag层16的加强树脂部17、和覆盖源电极2上的铝导线18的导线接合部的加强树脂部30。
因此，加强树脂23和加强树脂31优选为液状的高耐热/高强度树脂并且为相同的树脂，但也可以不一定是相同的树脂。
另外，在源电极2上的导线接合部处，以使包括铝导线18与电极膜之间（导线接合部）的间隙状的切口部18a的前端部附近成为被加强树脂31埋入的状态的方式，涂覆加强树脂31，形成加强树脂部30。
在本第2变形例的半导体封装体29的组装中，能够用可量产的工艺制造在基于烧结Ag层的管芯键合部、与SiC芯片1上的铝导线18的导线接合部各自的应力的集中部位形成了高耐热/高强度的加强树脂部17以及加强树脂部30的构造。其结果，即使在SiC芯片1的工作温度是200～300℃的高温区域中，也能够组装长期不会产生特性不良等不佳状况的具有高的可靠性的树脂密封型的半导体封装体29。进而，能够以与以往产品等同的生产率来量产该半导体封装体29。
另外，关于半导体封装体29的组装中的其他制造方法和其他效果，与实施方式1的半导体封装体20的组装及其效果相同，所以其重复说明省略。
接下来，说明本实施方式1的第3变形例。
图13是示出实施方式1的第3变形例的半导体装置的构造的剖面图。
图13所示的第3变形例是示出与实施方式1的图1以及图2所示的半导体封装体20大致同样的构造的半导体封装体32的例子，此处，仅说明半导体封装体32的与半导体封装体20的相异点。
本第3变形例的半导体封装体32是至少在第1烧结Ag层16与加强树脂部17的界面处形成了氧化Zn膜等有机Zn膜33的例子，提高了加强树脂部17和金属部件（第1烧结Ag层16以及镀Ag膜15）的粘接强度。
详细而言，在作为金属部件的第1烧结Ag层16以及管芯焊盘6上的镀Ag膜15各自的表面上形成有机Zn膜33，在该有机Zn膜33上涂覆加强树脂23，通过加热/硬化处理形成了加强树脂部17。
该有机Zn膜33是通过将有机Zn化合物溶液34涂覆到第1烧结Ag层16，并在大气中在200～350℃下进行加热烧成的方法而形成的。有机Zn化合物溶液34是低粘度，所以浸透到第1烧结Ag层16的空孔部内，并且在内部的Ag的表面中也形成，与Ag、Ni的金属种类无关地形成了与任意金属表面都紧贴的有机Zn膜33。此时，虽然取决于涂覆量、涂覆液的Zn含有量，但在几nm～几百nm的范围内形成有机Zn膜33的膜厚。
另外，在半导体封装体32中，作为对SiC芯片1和引线进行电连接的导线，使用在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25，通过超声波键合来连接铜导线25。另外，也可以作为在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25的替代，使用Ag导线。
于是，铜导线25的表面被Au膜或者Ag膜等贵金属镀膜覆盖。
另外，SiC芯片1的主面1a的源电极2和栅电极3各自的最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成，因此，表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25与源电极2、栅电极3的连接性提高。
根据本第3变形例的半导体封装体32，通过设置有机Zn膜33，能够提高第1烧结Ag层16或周边的金属面与加强树脂部17的粘接强度，并且不会剥离，所以即使外侧的密封体14的树脂剥离，通过加强树脂部17的保护效果，也能够不在第1烧结Ag层16中形成裂纹。
其结果，能够实现具备温度循环测试的可靠性、高温/高湿可靠性优良的高耐热的管芯键合构造的半导体封装体32。
另外，关于半导体封装体32中的其他构造和其他效果，与实施方式1的半导体封装体20相同，所以其重复说明省略。
接下来，说明本第3变形例的半导体封装体32的组装。图14是示出图13所示的半导体装置的组装步骤的一个例子的流程图。半导体封装体32的组装与图7所示的半导体封装体20的组装大致相同，所以使用图13以及图14仅说明其相异点。
半导体封装体32的组装中的与半导体封装体20的组装不同的点在于，在导线接合工序、和导线接合工序之后的树脂涂覆/树脂硬化工序之前，设置有机Zn膜形成工序。
首先，在导线接合工序中，通过实施了镀Ag的铜导线25（或者Ag导线）的超声波键合，对形成有SiC芯片1的主面1a的贵金属镀膜（例如Ni/Au膜）的源电极2与源极引线9之间、以及栅电极3与栅极引线11（参照图8）之间进行接线（电连接）。
在导线接合之后、树脂涂覆/树脂硬化工序之前进行有机Zn膜形成工序。
在有机Zn膜形成工序中，在管芯焊盘6以及第1烧结Ag层16上涂覆（供给）有机Zn化合物溶液34，在氧化气氛中加热到200～350℃的温度来进行烧成处理，由此，在第1烧结Ag层16的圆角部16a、内部的Ag骨架表面以及管芯焊盘6的上表面6a的镀Ag膜15（以及镀Ni膜12）的表面形成有机氧化膜等有机Zn膜33。
在形成有机Zn膜之后，进行与图7的半导体封装体20的组装的树脂涂覆/树脂硬化工序同样的树脂涂覆/树脂硬化工序，形成覆盖第1烧结Ag层16的加强树脂部17。
另外，关于半导体封装体32的组装中的其他制造方法和其他效果，与实施方式1的半导体封装体20的组装及其效果相同，所以其重复说明省略。
（实施方式2）
图15是透过树脂部而示出实施方式2的半导体装置的构造的一个例子的俯视图、图16是示出沿着图15所示的A-A线切断了的构造的剖面图、图17是示出图15所示的半导体装置的半导体芯片的第1电极的导线接合部的构造的一个例子的部分俯视图、图18是示出沿着图17所示的A-A线切断了的构造的部分剖面图。
图15以及图16所示的本实施方式2的半导体封装体（半导体装置）35是与实施方式1的图1以及图2所示的半导体封装体20大致同样的构造的半导体封装体，此处，仅说明半导体封装体35的与半导体封装体20的相异点。
在本实施方式2的半导体封装体35中，首先，作为对SiC芯片1和引线进行电连接的导线，使用在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25、26，通过超声波键合连接各个导线。或者，也可以代替在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25、26，而使用Ag导线。
此处，说明使用了在表面形成了Au膜或者Ag膜等贵金属镀膜的铜导线25、26的情况。即，对SiC芯片1的源电极2和源极引线9进行电连接的导线是粗的铜导线25，对SiC芯片1的栅电极3和栅极引线11进行电连接的导线是比铜导线25更细的铜导线26，各个导线和导线接合部的耐热性提高。
于是，铜导线25、26的表面被Au膜或者Ag膜等贵金属镀膜覆盖。表面被贵金属镀膜覆盖的铜导线25、26能够通过超声波键合进行接线，所以具有量产性优良这样的优点。
另外，SiC芯片1的主面1a的源电极2和栅电极3各自的最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成，因此，表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26的各自与源电极2、栅电极3的连接性提高。
进而，由于使用表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26，所以在连接有铜导线25的源极引线9的源键焊盘8、以及连接有铜导线26的栅极引线11的栅键焊盘10各自的焊盘的表面中形成了镀Ag27。
由此，能够提高表面被Au膜或者Ag膜等贵金属镀膜覆盖的铜导线25、26的各自与上述各个焊盘的连接性。
另外，在作为SiC芯片1的主面1a的主电极的源电极2上，以覆盖铜导线25的导线接合部（一部分）的状态，且在源电极2的表面的7成以上、优选大致整个面的区域（整个表面）形成厚度30μm以上的多孔质的（多孔状的）第2烧结Ag层36。
另外，第2烧结Ag层36优选覆盖源电极2的表面的整体，但也可以如图15所示，覆盖至从源电极2的表面的外周部起稍微内侧的区域。即，由于难以控制为覆盖源电极2的表面的100%整体，所以也可以以不从表面的外周部挤出的方式，覆盖至稍微内侧的区域。
另外，在半导体封装体35中，在SiC芯片1的主面1a的栅电极3的表面的导线接合部处，也以覆盖该导线接合部的状态形成多孔质的（多孔状的）第2烧结Ag层36。
根据本实施方式2的半导体封装体35，用电阻小且热传导性优良的铜导线25对流过大的主电流的源电极2与源电极用的源极引线9之间进行了接线，所以相比于铝导线，导线自身的发热更小，并且向引线侧的散热效果更大，所以能够将导线接合部的温度上升抑制得较低。
另外，通过使导线接合部多、并且在源电极2的表面的大致整个面（整个表面）形成热传导性以及电气传导性优良的多孔质的（多孔状的）第2烧结Ag层36，如图17以及图18所示，使从铜导线25供给的电流D通过低电阻的烧结Ag层（第2烧结Ag层36）分散并均匀地供给到SiC芯片（SiC器件）1。
由此，使SiC芯片1内的发热分布均匀化，能够抑制发生局部性的过热。
另外，由于能够抑制发生局部性的过热，所以器件的单元损伤的危险性减少，能够降低产生由器件引起的不良情况。
进而，热传导性优良的第2烧结Ag层36形成于作为主电极的源电极2上，所以即使在源电极2上的导线接合部处发热变大的情况下，也能够向周围瞬时地散热，由此，能够将导线接合部的温度上升抑制得较低。
另外，由于导线自身的发热的抑制化、器件内的发热的均匀化、基于第2烧结Ag层36的热的分散效果，导线接合部的温度上升被抑制而能够延缓由导线接合部的热疲劳所致的裂纹发展。其结果，能够谋求与导线接合部的断裂有关的功率循环测试寿命的提高。
进而，多孔质的（多孔状的）第2烧结Ag层36与实施了镀贵金属的铜导线25进行金属接合，也与源电极2的表面的贵金属镀膜进行金属接合。
因此，即使在铜导线25与源电极2的接合界面由于热膨胀差所致的热疲劳而断裂恶化的情况下，由于在多孔质的第2烧结Ag层36与源电极2之间，低弹性率的烧结Ag将变形吸收，所以接合界面没有断裂，进而铜导线25与第2烧结Ag层36的接合界面也没有断裂。
由此，能够实现能够通过烧结Ag层（第2烧结Ag层36）确保从铜导线25供给的电流D的通路并能够在长期间维持产品性能的可靠性高的半导体封装体35。
另外，在本实施方式2的半导体封装体35中，管芯键合构造是与图1的半导体封装体20相同的结构，所以关于管芯键合部的长期可靠性等效果，能够得到与通过图1的半导体封装体20得到的效果同样的效果。
进而，通过相比铝导线而高导电且高热传导、并且低热膨胀的Ag或者铜导线25的超声波键合，对流过大的电流的源电极2与源极引线9之间进行接线，所以能够减小来自导线自身的发热，能够通过提高来自SiC芯片1的表面的散热性，进一步抑制导线接合部的温度上升。
其结果，能够提高导线接合部的温度循环测试的可靠性，能够进一步减小半导体封装体35的电力损失，能够实现高性能且高可靠的树脂密封型的半导体封装体35。
关于本实施方式2的半导体封装体35的其他构造和其他效果，与实施方式1的半导体封装体20相同，所以其重复说明省略。
接下来，说明本实施方式2的半导体封装体35的组装。图19是示出图15所示的半导体装置的组装步骤的一个例子的流程图。半导体封装体35的组装与图7所示的半导体封装体20的组装大致相同，所以使用图15、图16以及图19仅说明其相异点。
本实施方式2的半导体封装体35的组装的与半导体封装体20的组装不同的点是导线接合工序、芯片上的烧结Ag层形成工序以及树脂涂覆/树脂硬化工序。
在半导体封装体35的组装的导线接合工序中，首先，使用Ag导线或者实施了Ag膜等贵金属镀膜的粗的铜导线25，通过超声波键合，对SiC芯片1的主面1a的最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成的源电极2、与实施了镀Ag27的源极引线9的源键焊盘8之间进行接线。
进而，使用Ag导线或者实施了Ag膜等贵金属镀膜的比铜导线25更细的铜导线26，通过超声波键合，对最外表面由Ni/Au膜或者Ag膜等贵金属镀膜构成的栅电极3、与实施了镀Ag27的栅极引线11的栅键焊盘10之间进行接线。
由此，在半导体封装体35的导线接合中，也能够使用铜导线25、26对源电极2与源极引线9之间进行接线，进而栅电极3与栅极引线11之间进行接线。
在导线接合之后，在SiC芯片1的主面1a的源电极2的表面处的包括导线接合部及其周围的7成以上的区域、优选表面的大致整个区域中以50μm以上的厚度供给第2烧结Ag膏37，进而在大气中加热到200～350℃，保持0.5～2小时而对Ag膏进行烧成处理。即，在源电极2上以及栅电极3上形成多孔质的第2烧结Ag层36。
此时，Ag膏中的树脂由于挥发、分解、流出而消失，在剩余的Ag粒子彼此之间、Ag粒子与铜导线25、电极的贵金属膜之间连结/融合持续进行，第2烧结Ag层36成为形成网眼状的网格而与贵金属膜进行了金属接合的状态。
即，成为SiC芯片1的源电极2和铜导线25、以及栅电极3和铜导线26分别经由第2烧结Ag层36电连接的状态。
接下来，对管芯焊盘6与SiC芯片1的背面1b的漏电极4的接合部、以及SiC芯片1的主面1a的源电极2以及栅电极3上的多孔质的第2烧结Ag层36供给环氧树脂等液状的热硬化性树脂（加强树脂23），成为使热硬化性树脂浸渍到第2烧结Ag层36内，并且使第1烧结Ag层16的表面被上述热硬化性树脂覆盖的状态。
在该状态下进行加热/硬化处理，形成覆盖管芯键合部的第1烧结Ag层16的表面的加强树脂部17。
关于本实施方式2的半导体封装体35的其他组装，与实施方式1的半导体封装体20的组装相同，所以其重复说明省略。
根据本实施方式2的半导体装置的组装，关于管芯键合、导线接合工序，加热温度、载荷/超声波的输出条件与以往产品的组装不同，但关于组装工艺，能够使用与以往产品的组装相同的工艺。另外，虽然导线接合部的烧结Ag层形成工序、加强树脂的浸渍/硬化处理工序增加，但由于不包括妨碍量产性的工序，所以无需新的设备投资，能够使用以往产品的生产线，提高生产率地制造高可靠的半导体封装体35。
关于本实施方式2的半导体封装体35的组装的其他效果，与实施方式1的图7所示的半导体封装体20的组装相同，所以其重复说明省略。
接下来，说明本实施方式2的变形例。
图20是透过树脂部而示出实施方式2的变形例的半导体装置的构造的俯视图、图21是示出沿着图20所示的A-A线切断了的构造的剖面图。
图20以及图21所示的本实施方式2的变形例的半导体装置是SiC二极管类型的半导体封装体38。
在说明半导体封装体38的构造时，在作为SiC二极管器件的SiC芯片1的主面1a，形成了最外表面由贵金属膜构成的主电极1g，进而在主电极1g的周围直至SiC芯片1的端部形成了绝缘性的钝化膜5。另一方面，在背面1b，形成了由最外表面由贵金属膜构成的多层膜构成的背面电极1h。
另一方面，Cu引线框侧由搭载SiC芯片1的管芯焊盘6、向外部取出电流的背面电极用引线41和背面电极用键合焊盘42、以及主电极用引线39和主电极用键合焊盘40构成，在管芯焊盘6的芯片搭载区域中形成了镀Ag膜15。
另外，管芯焊盘6上的镀Ag面和SiC芯片1的背面电极1h经由ZnAl系或者SnSbAgCu系或者AuSn系的高温无Pb焊料43被金属接合。即，SiC芯片1经由高温无Pb焊料43搭载于管芯焊盘6上。
进而，SiC芯片1的主电极1g与主电极用键合焊盘40之间、以及管芯焊盘6与背面电极用键合焊盘42之间通过使用了在表面实施了镀Ag或者Au或者Pd的多个铜导线25、26的超声波键合而被接线。
另外，在SiC芯片1的主电极1g上，以覆盖铜导线25的一部分的状态在主电极1g的表面的7成以上的区域、优选表面的大致整个区域中形成了厚度30μm以上的多孔质的第2烧结Ag层36。
即，在主电极1g上，铜导线25的导线接合部及其周边、以及主电极1g的表面的大致整体被第2烧结Ag层36覆盖。
另外，第2烧结Ag层36优选覆盖主电极1g的表面的整体，但也可以如图20所示，覆盖至从主电极1g的表面的外周部稍微内侧的区域。即，由于难以控制为覆盖主电极1g的表面的100%整体，所以也可以以不从表面的外周部挤出的方式，覆盖至稍微内侧的区域。
另外，设置了密封体14，该密封体14以使管芯焊盘6和各引线的一部分向外部露出，进而覆盖SiC芯片1、焊料接合层（高温无Pb焊料43）、多个铜导线25、26、以及第2烧结Ag层36的整体的方式，通过树脂模用密封树脂形成。
另外，在从密封体14露出的管芯焊盘6的下表面6b以及其他一部分、各引线的金属面，镀敷形成了基于Sn的无Pb焊料膜44、45。
根据本实施方式2的半导体封装体38，能够实现即使在高温工作环境中也长期可靠性高、并且低损失且小型的二极管类型的半导体封装体38。
即，能够通过第2烧结Ag层36确保从铜导线25供给的电流的通路，所以能够实现能够长期间维持产品性能的可靠性高的二极管类型的半导体封装体38。
以上，根据发明的实施方式，具体说明了由本发明者完成的发明，但本发明不限于所述发明的实施方式，当然能够在不脱离其主旨的范围内实现各种变更。
例如，在所述实施方式1（变形例）中，说明了在作为金属导线采用铜导线的情况下在其表面形成Au膜或者Ag膜等贵金属镀膜的情况，但所述贵金属镀膜也可以是镀Pd膜。另外，也可以代替实施方式1（包括变形例）、实施方式2所示的SiC芯片而使用GaN芯片。

Claims (19)

1.一种半导体装置，其特征在于，具有：
芯片搭载部，具有芯片搭载面；
宽带隙半导体芯片，具有主面及其相反侧的背面，在所述主面形成了第1电极，且在所述背面形成了第2电极，并且搭载于所述芯片搭载部的所述芯片搭载面；
多孔质的第1烧结Ag层，设置于所述芯片搭载面与所述宽带隙半导体芯片之间，对所述芯片搭载部与所述宽带隙半导体芯片进行接合；
第1树脂部，覆盖所述第1烧结Ag层的表面，并且被形成为圆角状；
第1引线，与所述宽带隙半导体芯片的所述第1电极电连接；以及
第2引线，与所述宽带隙半导体芯片的所述第2电极电连接，
所述第1树脂部覆盖所述宽带隙半导体芯片的侧面的一部分。
2.一种半导体装置，其特征在于，具有：
芯片搭载部，具有芯片搭载面；
宽带隙半导体芯片，具有主面及其相反侧的背面，在所述主面形成了第1电极，且在所述背面形成了第2电极，并且搭载于所述芯片搭载部的所述芯片搭载面；
第1引线，与所述宽带隙半导体芯片的所述第1电极电连接；
第2引线，与所述宽带隙半导体芯片的所述第2电极电连接；
金属导线，对所述第1电极和所述第1引线进行电连接；以及
多孔质的第2烧结Ag层，配置于所述第1电极上，覆盖所述金属导线与所述第1电极的导线接合部，
所述第2烧结Ag层覆盖所述第1电极的整个表面。
3.根据权利要求1所述的半导体装置，其特征在于，具有：
金属导线，对所述第1电极和所述第1引线进行电连接；以及
多孔质的第2烧结Ag层，配置于所述第1电极上，覆盖所述金属导线和所述第1电极的导线接合部，
所述第2烧结Ag层覆盖所述第1电极的整个表面。
4.根据权利要求1所述的半导体装置，其特征在于，
所述半导体装置具有对所述第1电极和所述第1引线进行电连接的铝导线。
5.根据权利要求1所述的半导体装置，其特征在于，具有：
铝导线，对所述第1电极和所述第1引线进行电连接；以及
第2树脂部，配置于所述第1电极上，并且覆盖所述第1电极与所述铝导线的导线接合部。
6.根据权利要求3所述的半导体装置，其特征在于，
在所述芯片搭载部的所述芯片搭载面的表面形成了第1贵金属镀膜。
7.根据权利要求6所述的半导体装置，其特征在于，
所述宽带隙半导体芯片、所述第1烧结Ag层或者所述第1烧结Ag层以及所述第2烧结Ag层、所述第1树脂部以及所述芯片搭载部的一部分被第3树脂部覆盖。
8.根据权利要求1所述的半导体装置，其特征在于，
在所述第1烧结Ag层与所述第1树脂部的界面处，形成了有机Zn膜。
9.根据权利要求7所述的半导体装置，其特征在于，
所述半导体装置具有对所述第1电极和所述第1引线进行电连接的所述金属导线，
所述金属导线的表面被第2贵金属镀膜覆盖。
10.根据权利要求9所述的半导体装置，其特征在于，
所述芯片搭载部、所述第1引线以及所述第2引线由以铜为主成分的材料构成。
11.根据权利要求10所述的半导体装置，其特征在于，
所述芯片搭载部、所述第1引线以及所述第2引线各自的表面被镀Ni膜覆盖。
12.根据权利要求1所述的半导体装置，其特征在于，
所述宽带隙半导体芯片由SiC或者GaN构成。
13.根据权利要求1所述的半导体装置，其特征在于，
在所述宽带隙半导体芯片的所述主面形成了第3电极，
所述半导体装置具有与所述第3电极进行电连接的第3引线，
所述第1引线是源极引线，
所述第2引线是漏极引线，
所述第3引线是栅极引线。
14.一种半导体装置的制造方法，其特征在于，具有：
（a）准备具备芯片搭载部、第1引线以及第2引线的引线框的工序，所述芯片搭载部具有芯片搭载面，所述第1引线被配置于所述芯片搭载部附近，所述第2引线与所述芯片搭载部连结；
（b）在所述芯片搭载部的所述芯片搭载面上供给第1烧结Ag膏，之后在所述第1烧结Ag膏上，搭载在主面形成了第1电极并且在背面形成了第2电极的宽带隙半导体芯片的工序；
（c）对所述第1烧结Ag膏进行加热来形成多孔质的第1烧结Ag层，通过所述第1烧结Ag层对所述芯片搭载部和所述宽带隙半导体芯片进行接合的工序；
（d）对所述宽带隙半导体芯片的所述第1电极与所述第1引线进行电连接的工序；
（e）在所述第1烧结Ag层的表面上供给液状的第1树脂，之后对所述第1树脂进行加热，从而形成覆盖所述第1烧结Ag层的表面并且呈圆角状的第1树脂部的工序；以及
（f）从所述引线框分离所述第1引线以及所述第2引线的工序，
在所述（e）工序中，
以覆盖所述宽带隙半导体芯片的侧面的一部分的方式形成所述第1树脂部。
15.一种半导体装置的制造方法，其特征在于，具有：
（a）准备具备芯片搭载部、第1引线以及第2引线的引线框的工序，所述芯片搭载部具有芯片搭载面，所述第1引线被配置于所述芯片搭载部附近，所述第2引线与所述芯片搭载部连结；
（b）在所述芯片搭载部的所述芯片搭载面上，搭载在主面形成了第1电极并且在背面形成了第2电极的宽带隙半导体芯片的工序；
（c）通过金属导线连接所述宽带隙半导体芯片的所述第1电极和所述第1引线的工序；
（d）在所述第1电极上的与所述金属导线接合的导线接合部处供给第2烧结Ag膏，之后对所述第2烧结Ag膏进行加热而形成多孔质的第2烧结Ag层，经由所述第2烧结Ag层对所述第1电极和所述金属导线进行电连接的工序；以及
（e）从所述引线框分离所述第1引线以及所述第2引线的工序，
在所述（d）工序中，
以覆盖所述第1电极的整个表面的方式形成所述第2烧结Ag层。
16.根据权利要求14所述的半导体装置的制造方法，其特征在于，
在所述（d）工序中，通过金属导线对所述第1电极和所述第1引线进行电连接，
在所述（e）工序之后、并且在所述（f）工序之前，具有在所述第1电极上的与所述金属导线接合的导线接合部处供给第2烧结Ag膏，之后对所述第2烧结Ag膏进行加热来形成多孔质的第2烧结Ag层，经由所述第2烧结Ag层对所述第1电极与所述金属导线进行电连接的工序，
以覆盖所述第1电极的整个表面的方式形成所述第2烧结Ag层。
17.根据权利要求14所述的半导体装置的制造方法，其特征在于，
在所述（d）工序中，通过铝导线对所述第1电极和所述第1引线进行电连接。
18.根据权利要求14所述的半导体装置的制造方法，其特征在于，
在所述（d）工序中，通过铝导线对所述第1电极和所述第1引线进行电连接，
在所述（e）工序中，在所述第1电极上的与所述铝导线接合的导线接合部处供给第2树脂，之后对所述第2树脂进行加热，从而形成覆盖所述导线接合部的第2树脂部。
19.根据权利要求14所述的半导体装置的制造方法，其特征在于，
在所述（d）工序之后、并且在所述（e）工序之前，在所述芯片搭载部的一部分和所述第1烧结Ag层上供给有机Zn化合物溶液，之后对所述有机Zn化合物溶液进行加热，从而在所述芯片搭载部的一部分和所述第1烧结Ag层的表面上形成有机Zn膜。
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