CN103969964B - For hermetic seal and the micropore packoff of immersed photoetching machine - Google Patents

For hermetic seal and the micropore packoff of immersed photoetching machine Download PDF

Info

Publication number
CN103969964B
CN103969964B CN201410172815.8A CN201410172815A CN103969964B CN 103969964 B CN103969964 B CN 103969964B CN 201410172815 A CN201410172815 A CN 201410172815A CN 103969964 B CN103969964 B CN 103969964B
Authority
CN
China
Prior art keywords
liquid
injection chamber
gas
submergence unit
hermetic seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410172815.8A
Other languages
Chinese (zh)
Other versions
CN103969964A (en
Inventor
傅新
徐宁
陈文昱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG QIER ELECTROMECHANICAL TECHNOLOGY Co.,Ltd.
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN201410172815.8A priority Critical patent/CN103969964B/en
Publication of CN103969964A publication Critical patent/CN103969964A/en
Application granted granted Critical
Publication of CN103969964B publication Critical patent/CN103969964B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention discloses a kind of hermetic seal for immersed photoetching machine and micropore packoff.Projection lens set in immersed photoetching machine and be provided with hermetic seal and micropore packoff between silicon chip; Hermetic seal and micropore packoff comprise submergence unit matrix, submergence unit upper end cover, submergence unit bottom end cover and submergence unit hermetic seal end cap; Submergence unit substrates contacts with submergence unit upper end cover, contacts successively be fastenedly connected below submergence unit matrix with submergence unit bottom end cover with submergence unit hermetic seal end cap.The present invention has been used for the sealing of gap flow field in immersion lithographic system and liquid and has injected and reclaim function, air-tight structure and microcellular structure is adopted to prevent leak of liquid, micropore adding, negative pressure reclaims liquid and retrains gap flow field, realized the sealing of gap flow field by air-tight structure, the stability at gap flow field edge can be ensured simultaneously.The stable renewal of immersion liquid in gap flow field is realized by large discharge fluid injection and recovery.

Description

For hermetic seal and the micropore packoff of immersed photoetching machine
Technical field
The present invention relates to the sealing of a kind of flow field and fluid injection retracting device, particularly relate to a kind of hermetic seal for immersed photoetching machine and micropore packoff.
Background technology
Litho machine is one of Core equipment manufacturing VLSI (very large scale integrated circuit), and modern lithographic machine is based on optical lithography, and it utilizes optical system the figure on mask plate is accurately projected and is exposed on the silicon chip of coated photoresist.The silicon chip that it comprises a LASER Light Source, an optical system, one piece of projection mask be made up of graphics chip, an alignment system and one scribble photosensitive photoresist.
Liquid immersion lithography (ImmersionLithography) equipment is by the end filling the liquid of certain high index of refraction between a slice projection objective and silicon chip, relative to the dry lithography machine that intermediate medium is gas, improve the numerical aperture (NA) of projection objective, thus improve resolution and the depth of focus of lithographic equipment.In the Next Generation Lithographies machine proposed, liquid immersion lithography is changed minimum to existing equipment, has good inheritance to present dry lithography facility.The normal scheme adopted is local immersion method at present, is limited in the regional area above silicon chip and between the lower surface of last a slice projection objective, and keeps the liquid flow of steady and continuous by liquid.In stepping-scan-type lithographic equipment, silicon chip carries out scanning motion at a high speed in exposure process, and the liquid in exposure area is taken away flow field by this athletic meeting, thus causes leakage, and the liquid of leakage can form water mark on a photoresist, has a strong impact on exposure quality.Along with the carrying out of photoetching process, the decomposition of photoresist can produce the impurity such as particle and bubble, and these impurity can affect exposure quality equally, need utilize the flowing of liquid by these impurity bands from immersion flow field.Therefore, the leakage of liquid and the turnover rate problem of immersion liquid in the course of work must be solved by emphasis in immersion lithography.
In current existing solution, key problems-solving is the sealing problem of filling liquid, adopts hermetic seal or liquid sealing component around the gap flow field between projection objective group end element and silicon chip.Dry-gas Sealing Technology is around filling on the periphery in flow field, forming annular air curtain, being limited in certain border circular areas by filling liquid by applying gases at high pressure.Liquid sealing technology is then utilize and the inconsistent third party's liquid (normally magnetic fluid or mercury etc.) of filling liquid, seals around filling flow field.But have the following disadvantages:
(1) liquid sealing mode has very harsh requirement to seal fluid, while guaranteeing that sealing property requires, also must ensure that seal fluid and filling liquid do not dissolve mutually, and photoresist (or Topcoat) and filling liquid not phase counterdiffusion.In substrate high speed motions, outside air or seal fluid, once be involved in or dissolve or be diffused in filling liquid, all can have a negative impact to exposure quality.
(2) existing hermetic adopts air curtain to be applied to around fill fluid, causes the instability at edge, flow field, in the stepping of silicon chip high speed and scanning process, leak of liquid and sealing gas may be caused to entrainment in flow field; Meanwhile, will biphase gas and liquid flow be formed when filling liquid and sealing gas reclaim together, cause vibration thus, affect the steady operation of exposure system.
Summary of the invention
In order to the gap flow field solved in the immersion lithography of local seals and liquid turnover rate problem, the object of the present invention is to provide a kind of hermetic seal for immersed photoetching machine and micropore packoff, use the leak of liquid that square microcellular structure and air-tight structure prevent in gap flow field at edge, flow field, use large discharge fluid injection and recovery structure to solve the turnover rate problem of liquid.
The technical solution used in the present invention is as follows:
Hermetic seal and micropore packoff is provided with between the projection lens set of the present invention in immersed photoetching machine and silicon chip; Described hermetic seal and micropore packoff comprise submergence unit matrix, submergence unit upper end cover, submergence unit bottom end cover and submergence unit hermetic seal end cap; Described submergence unit substrates contacts with submergence unit upper end cover, contacts successively, and connected by screw fastening below submergence unit matrix with submergence unit bottom end cover with submergence unit hermetic seal end cap; Wherein:
1) submergence unit matrix:
Submergence unit matrix has center reverse taper holes, taper hole large end in center is outwards the first fluid injection chamber and the first liquid recycling cavity of Relative distribution, first fluid injection chamber is connected with the first reservoir channel of fold-line-shaped, and first liquid recycling cavity is connected with the first liquid recovery approach of fold-line-shaped, taper hole large end in center is outwards fluid injection chamber, right side second and the fluid injection chamber, left side second of Relative distribution, the second fluid injection chamber, right side is outwards connected with right side second reservoir channel of fold-line-shaped, the second fluid injection chamber, right side is connected with square fluid injection chamber downwards, the second fluid injection chamber, left side is outwards connected with left side second reservoir channel of fold-line-shaped, and fluid injection chamber, left side second is connected with square fluid injection chamber downwards, right side second liquid recycling cavity is had between fluid injection chamber, right side second and the first fluid injection chamber, right side second liquid recycling cavity is outwards connected with the right side second liquid recovery approach of fold-line-shaped, right side second liquid recycling cavity is connected with right side second liquid accumulator tank downwards, right side second liquid accumulator tank is inwardly connected with square liquids recovery chamber, left side second liquid recycling cavity is had between fluid injection chamber, left side second and the first fluid injection chamber, left side second liquid recycling cavity is outwards connected with the left side second liquid recovery approach of fold-line-shaped, left side second liquid recycling cavity is connected with second liquid accumulator tank downwards, left side second liquid accumulator tank is inwardly connected with square liquids recovery chamber, the second fluid injection chamber, right side is outwards gas injection chamber, gas injection chamber, right side is connected with right side gas injection passage, the second fluid injection chamber, left side is outwards gas injection chamber, left side, gas injection chamber, left side is connected with left side gas injection passage, Top right gas recycling cavity is had between gas injection chamber, right side and first liquid recycling cavity, Top right gas recycling cavity is connected with the Top right gas recovery approach of fold-line-shaped, left gas recycling cavity is had between gas injection chamber, left side and first liquid recycling cavity, left gas recycling cavity is connected with the left gas recovery approach of fold-line-shaped, first reservoir channel, right side second liquid recovery approach, right side gas injection passage, right side second reservoir channel and Top right gas recovery approach are assembled to submergence unit matrix side, and be connected with exterior line by threaded hole, first liquid recovery approach, left side second liquid recovery approach, left side gas injection passage, left side second reservoir channel and left gas recovery approach are assembled to the opposite side of submergence unit matrix, are connected with exterior line by threaded hole,
2) submergence unit upper end cover: have central through hole on submergence unit upper end cover;
3) submergence unit bottom end cover:
Submergence unit bottom end cover has central square through hole, and central square through hole is outwards the square liquid injection hole array of micropore composition, and liquid injection hole array is downwards bottom end cover fluid injection chamber, and liquid injection hole array is outwards the square recovery holes array of square micropore composition;
4) submergence unit hermetic seal end cap:
Submergence unit hermetic seal end cap has central through hole, central through hole is outwards Top right gas recycling cavity and left gas recycling cavity, Top right gas recycling cavity is connected with central through hole with left gas recycling cavity, submergence unit hermetic seal end cap outermost is gas injection cushion chamber, have hermetic seal end cap gas injection chamber, right side and left side hermetic seal end cap gas injection chamber between Top right gas recycling cavity and left gas recycling cavity circumference, right side hermetic seal end cap gas injection chamber is outwards connected with gas injection cushion chamber with left side hermetic seal end cap gas injection chamber.
Described square fluid injection chamber is connected with liquid injection hole array downwards, and square liquids recovery chamber is connected with recovery holes array downwards, and gas injection chamber, right side is connected in hermetic seal end cap gas injection chamber, right side downwards, and gas injection chamber, left side downwards and end cover gas injection chamber.
The square round array that described liquid injection hole array is made up of circular port, the square round array that recovery holes array is made up of square opening.
The beneficial effect that the present invention has is:
1, fluid-filling structure and recovery structure are divided into two-stage, first order liquid injection port provides large discharge fluid injection, the opposite side of first order liquids recovery Kou center taper hole is relative with first order liquid injection port, be used for reclaiming most of liquid, large discharge fluid injection can ensure the turnover rate of liquid, takes away the impurity such as the pollutant produced in exposure process in time.First order liquid injection port is vertical with direction of scanning with first order liquids recovery mouth line direction simultaneously, just can not there is zero-speed district in the course of the work, can not there is the region that liquid cannot upgrade.
2, second level liquid injection port is the square round array of circular micropore composition, is distributed in outside the taper hole of center, provides low discharge fluid injection, is used for ensureing the marginal steady of gap flow field.Second level liquids recovery mouth is the square round array of square opening composition, be distributed in outside the liquids recovery mouth of the second level, negative pressure on logical on the liquids recovery mouth of the second level, be used for reclaiming the liquid in gap flow field, immersion liquid is outwardly reclaimed in time, thus prevents the leakage of immersion liquid.The micropore of second level liquid injection port and second level liquids recovery mouth is arranged in square configuration respectively, two relative drift angles are respectively in the bottom of first order liquid injection port and first order liquids recovery mouth, the diagonal line of two other relative drift angle is parallel with direction of scanning, such square structure extends the resistance of the leak of liquid on direction of scanning, allows motion platform to have higher sweep velocity.
3, gas injection structure distribution is in outermost, sealing gas forms air curtain, sealing gas is at the conglobate airtight air curtain of submergence unit outermost shape, the gas recovery structure of inner side makes sealing gas flow from outside to inside, utilize the pressure seal gap flow field of sealing gas, increase the leak resistance of immersion liquid.Square and the octagonal arrangement of submergence unit bottom, makes the pressure of sealing gas uneven in the pressure distribution at second liquid recovery port place, and the pressure at drift angle place is comparatively large, and pressure between drift angle is less, has better adaptability to working condition.
Accompanying drawing explanation
Fig. 1 is the rough schematic view that the present invention assembles mutually with projection lens set.
Fig. 2 is submergence unit blast sectional view.
Fig. 3 is submergence unit matrix vertical view.
Fig. 4 is that submergence unit matrix overlooks axis of orientation survey view.
Fig. 5 is submergence unit matrix upward view.
Fig. 6 is that submergence unit looks up axis of orientation survey view.
Fig. 7 is submergence unit upper end cover.
Fig. 8 is submergence unit bottom end cover vertical view.
Fig. 9 is submergence unit bottom end cover upward view.
Figure 10 is submergence unit hermetic seal end cap.
In figure: 1, projection lens set, 2, hermetic seal and micropore packoff, 2A, submergence unit matrix, 2B, submergence unit upper end cover, 2C, submergence unit bottom end cover, 2D, submergence unit hermetic seal end cap, 3, silicon chip, 4A, first reservoir channel, 4B, first fluid injection chamber, 5A, first liquid recovery approach, 5B, first liquid recycling cavity, 6A1, right side the second reservoir channel, 6B1, the second fluid injection chamber, right side, 6A2, left side the second reservoir channel, 6B2, the second fluid injection chamber, left side, 6C, square fluid injection chamber, 6D, liquid injection hole array, 6E, bottom end cover fluid injection chamber, 7A1, right side second liquid recovery approach, 7B1, right side second liquid recycling cavity, 7C1, right side second liquid accumulator tank, 7A2, left side second liquid recovery approach, 7B2, left side second liquid recycling cavity, 7C2, left side second liquid accumulator tank, 7D, square liquids recovery chamber, 7E, recovery holes array, 8A1, right side gas injection passage, 8B1, gas injection chamber, right side, 8C1, hermetic seal end cap gas injection chamber, right side, 8A2, left side gas injection passage, 8B2, gas injection chamber, left side, 8C2, hermetic seal end cap gas injection chamber, left side, 8D, gas injection cushion chamber, 9A1, Top right gas recovery approach, 9B1, Top right gas recycling cavity, 9C1, Top right gas recycling cavity, 9A2, left gas recovery approach, 9B2, left gas recycling cavity, 9C2, left gas recycling cavity, 10, immersion liquid.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described further.
As shown in Figure 1 and Figure 2, hermetic seal and micropore packoff 2 is provided with between the projection lens set 1 of the present invention in immersed photoetching machine and silicon chip 3; Described hermetic seal and micropore packoff 2 comprise submergence unit matrix 2A, submergence unit upper end cover 2B, submergence unit bottom end cover 2C and submergence unit hermetic seal end cap 2D; Contact with submergence unit upper end cover 2B above described submergence unit matrix 2A, contact with submergence unit hermetic seal end cap 2D with submergence unit bottom end cover 2C successively below submergence unit matrix 2A, and connected by screw fastening.
Hermetic seal and micropore packoff 2 are arranged between projection lens set 1 and silicon chip 3, hermetic seal and micropore packoff 2 have center taper hole, immersion liquid 10 is limited in immediately below projection objective group 1 by the major function of hermetic seal and center cone aperture apparatus 2, the light sent from projection objective group 1 enters gap flow field through after the central through hole of hermetic seal and micropore packoff 2, namely to be radiated on silicon chip 3 through immersion liquid 10, complete exposure process, the refractive index of immersion liquid is higher than air, thus can improve numerical aperture and the resolution of etching system.
1) submergence unit matrix 2A:
As shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6, submergence unit matrix 2A has center reverse taper holes, taper hole large end in center is outwards the first fluid injection chamber 4B and the first liquid recycling cavity 5B of Relative distribution, first fluid injection chamber 4B is connected with the first reservoir channel 4A of fold-line-shaped, and first liquid recycling cavity 5B is connected with the first liquid recovery approach 5A of fold-line-shaped, taper hole large end in center is outwards right side second fluid injection chamber 6B1 and fluid injection chamber, left side second 6B2 of Relative distribution, right side the second fluid injection chamber 6B1 is outwards connected with the right side second reservoir channel 6A1 of fold-line-shaped, right side the second fluid injection chamber 6B1 is connected with square fluid injection chamber 6C downwards, left side the second fluid injection chamber 6B2 is outwards connected with the left side second reservoir channel 6A2 of fold-line-shaped, and fluid injection chamber, left side second 6B2 is connected with square fluid injection chamber 6C downwards, right side second liquid recycling cavity 7B1 is had between right side second fluid injection chamber 6B1 and the first fluid injection chamber 4B, right side second liquid recycling cavity 7B1 is outwards connected with the right side second liquid recovery approach 7A1 of fold-line-shaped, right side second liquid recycling cavity 7B1 is connected with right side second liquid accumulator tank 7C1 downwards, right side second liquid accumulator tank 7C1 is inwardly connected with square liquids recovery chamber 7D, left side second liquid recycling cavity 7B2 is had between left side second fluid injection chamber 6B2 and the first fluid injection chamber 5B, left side second liquid recycling cavity 7B2 is outwards connected with the left side second liquid recovery approach 7A2 of fold-line-shaped, left side second liquid recycling cavity 7B2 is connected with second liquid accumulator tank 7C2 downwards, left side second liquid accumulator tank 7C2 is inwardly connected with square liquids recovery chamber 7D, right side the second fluid injection chamber 6B1 is outwards gas injection chamber 8B1, right side gas injection chamber 8B1 is connected with right side gas injection passage 8A1, left side the second fluid injection chamber 6B2 is outwards gas injection chamber, left side 8B2, left side gas injection chamber 8B2 is connected with left side gas injection passage 8A2, Top right gas recycling cavity 9B1 is had between right side gas injection chamber 8B1 and first liquid recycling cavity 5B, Top right gas recycling cavity 9B1 is connected with the Top right gas recovery approach 9A1 of fold-line-shaped, left gas recycling cavity 9B2 is had between left side gas injection chamber 8B2 and first liquid recycling cavity 4B, left gas recycling cavity 9B2 is connected with the left gas recovery approach 9A2 of fold-line-shaped, first reservoir channel 4A, right side second liquid recovery approach 7A1, right side gas injection passage 8A1, right side second reservoir channel 6A1 and Top right gas recovery approach 9A1 assemble to submergence unit matrix 2A side, and be connected with exterior line by threaded hole, first liquid recovery approach 5A, left side second liquid recovery approach 7A2, left side gas injection passage 8A2, left side second reservoir channel 6A2 and left gas recovery approach 9A2 assemble to the opposite side of submergence unit matrix 2A, are connected with exterior line by threaded hole.
2) submergence unit upper end cover 2B:
As shown in Figure 7, submergence unit upper end cover 2B has central through hole.Submergence unit upper end cover 2B has the through hole be threaded, the lower surface of submergence unit upper end cover 2B contacts with submergence unit matrix 2A, each pipeline on submergence unit matrix 2A is made to form pipeline independent sealed separately, complete fluid injection and the liquids recovery of submergence unit, gas injection and gas reclaim function.
3) submergence unit bottom end cover 2C:
As shown in Figure 8, Figure 9, submergence unit bottom end cover 2C has central square through hole, central square through hole is outwards the square liquid injection hole array 6D of micropore composition, liquid injection hole array 6D is downwards bottom end cover fluid injection chamber 6E, and liquid injection hole array 6D is outwards the square recovery holes array 7E of square micropore composition.
4) submergence unit hermetic seal end cap 2D:
As shown in Figure 10, submergence unit hermetic seal end cap 2D has central through hole, central through hole is outwards Top right gas recycling cavity 9C1 and left gas recycling cavity 9C2, Top right gas recycling cavity 9C1 is connected with central through hole with left gas recycling cavity 9C2, submergence unit hermetic seal end cap 2D outermost is gas injection cushion chamber 8D, right side hermetic seal end cap gas injection chamber 8C1 and left side hermetic seal end cap gas injection chamber 8C2 is had between Top right gas recycling cavity 9C1 and left gas recycling cavity 9C2 circumference, right side hermetic seal end cap gas injection chamber 8C1 is outwards connected with gas injection cushion chamber 8D with left side hermetic seal end cap gas injection chamber 8C2.
Described square fluid injection chamber 6C is connected with liquid injection hole array 6D downwards, square liquids recovery chamber 7D is connected with recovery holes array 7E downwards, right side gas injection chamber 8B1 right side hermetic seal end cap gas injection downwards chamber 8C1 is connected, and gas injection chamber, left side 8B2 downwards and end cover gas injection chamber 8C2.
The square round array that described liquid injection hole array 6D is made up of circular port, the square round array that recovery holes array 7E is made up of square opening.
As shown in Figure 10, on submergence unit matrix 2A, the first reservoir channel 4A and the first fluid injection chamber 4B forms the first fluid-filling structure, has been used for large discharge fluid injection.Liquid first recovery approach 5A and first liquid recycling cavity 5B form first liquid recovery structure, are used for most of liquid at taper hole place of collection centre.Right side second reservoir channel 6A1 on submergence unit matrix 2A and fluid injection chamber, right side second 6B1, left side second reservoir channel 6A2 and fluid injection chamber, left side second 6B2 form respectively two independently reservoir channel jointly inject square fluid injection chamber 6C, square fluid injection chamber 6C is connected with the liquid injection hole array 6D on submergence unit bottom end cover 2C, forms the second complete fluid-filling structure together with bottom end cover fluid injection chamber 6E.
Left side second liquid recovery approach 7A2, left side second liquid recycling cavity 7B2 on submergence unit matrix 2A and left side second liquid accumulator tank 7C2, right side second liquid recovery approach 7A1, right side second liquid recycling cavity 7B1 and right side second liquid accumulator tank 7C1 form two independently liquids recovery passages, jointly be connected into upper end cover square liquids recovery chamber 7D, the recovery holes array 7E of square liquids recovery chamber 7D downwards and on submergence unit bottom end cover 2C is connected to form complete second liquid recovery structure.
Gas injection chamber, right side 8B1 on submergence unit matrix 2A is connected with the right side hermetic seal end cap gas injection chamber 8C1 on submergence unit hermetic seal end cap 2D downwards, make right side gas injection passage 8A1, right side gas injection chamber 8B1 and right side hermetic seal end cap gas injection chamber 8C1 forms right side gas injection passage, left side gas injection chamber 8B2 is connected with the left side hermetic seal end cap gas injection chamber 8C2 on submergence unit hermetic seal end cap 2D downwards, make left side gas injection passage 8A2, left side gas injection chamber 8B2 and left side hermetic seal end cap gas injection chamber 8C2 forms left side gas injection passage, right side gas injection passage and left side gas injection passage are connected into gas injection cushion chamber 8D jointly, form complete gas injection structure.
Top right gas recycling cavity 9B1 is connected with Top right gas recycling cavity 9C1, makes Top right gas recovery approach 9A1, Top right gas recycling cavity 9B1 and Top right gas recycling cavity 9C1 jointly form complete Top right gas recovery structure.Left gas recycling cavity 9B2 is connected with left gas recycling cavity 9C2, makes left gas recovery approach 9A2, left gas recycling cavity 9B2 and left gas recycling cavity 9C2 jointly form complete left gas recovery structure.
principle of work of the present invention is as follows:
As shown in Figure 1, hermetic seal and nanopore device 2 position is in a lithography system given.In exposure process, light is by mask plate, projection objective group 1 and filled the gap flow field formed by immersion liquid, is radiated on the photoresist of silicon chip 3, exposes silicon chip 3, transferred to accurately on the photoresist of silicon chip by the figure on mask.Submergence unit matrix 2A is connected on pose adjusting mechanism, for adjusting locus and the attitude of hermetic seal and gas-liquid spacer assembly 2.
When silicon chip is static, immersion liquid 10 in fluid injection pipeline is injected by the upper end cover first reservoir channel 4A on submergence unit matrix 2A and the first fluid injection chamber 4B, immersion liquid flows into gap flow field downwards along the slit of the center taper hole on submergence unit matrix 2A and projection objective group 1 circular conical surface composition, immersion liquid 10 can be filled in the gap of last a slice projection objective and silicon chip 3 composition, forms gap flow field.First fluid-filling structure provides larger fluid injection flow, to ensure the turnover rate of gap flow field, takes away the pollutant in exposure process in time.Simultaneously, immersion liquid is by right side second reservoir channel 6A1 and left side second reservoir channel 6A2, successively through each passage of the second fluid-filling structure, finally enter bottom end cover fluid injection chamber 6E, from bottom end cover fluid injection chamber 6E inject liquid with from first fluid injection chamber 4B inject liquid joint together with, the liquid in gap flow field is moved to both direction.
Along with the injection of liquid, the liquid level at taper hole place, center constantly raises, and meanwhile, the liquid in gap flow field spreads to surrounding in the horizontal direction.When the liquid risen in taper hole place, center is elevated to first liquid recycling cavity 5B place, the recovery approach that just can consist of first liquid recycling cavity 5B and liquid first recovery approach 5A, flows into exterior line.Negative pressure on right side second liquid recovery approach 7A1 and left side second liquid recovery approach 7A2 is logical, to surrounding diffusion immersion liquid run into recovery holes array 7E after, just can under the effect of negative pressure, successively upwards by each passage of second liquid recovery structure, enter right side second liquid recovery approach 7A1 and left side second liquid recovery approach 7A2, reclaimed away by exterior line.After fluid injection-recovery reaches balance, just complete the gap flow field filling process of submergence unit.Just the sealing of gap flow field can be completed by square recovery holes array 7E.
Sealing gas enters gas injection structure by right side gas injection passage 8A1 and left side gas injection passage 8A2, gas injection cushion chamber 8D is finally entered successively by the various piece of gas injection structure, sealing gas just can form air curtain below gas injection cushion chamber 8D, is distributed in the surrounding of gap flow field.Gas recovery structure is divided into two independently pipelines, and the sealing gas injected from gas injection cushion chamber 8D passes through gas recovery structure successively, is recovered away respectively by Top right gas recovery approach 9A1 and left gas recovery approach 9A2.Sealing gas flows from outside to inside, and the acting in conjunction of micropore recovery structure prevents the leakage of immersion liquid.
First reservoir channel 4A provides large discharge fluid injection, through the first fluid injection chamber 4B, object lens bottom is flowed into by the gap between the taper hole of center, along with the injection of immersion liquid, immersion liquid is bottom object lens, the first liquid recycling cavity 5B that quilt is relative with the first reservoir channel 4B reclaims, fluid injection herein-recovery flow is larger, to ensure the turnover rate of immersion liquid, take away the pollutant produced in exposure process in time, due to the direction of motion of silicon chip and fluid injection-direction of recession perpendicular, therefore there is not zero-speed district.
Regulate the position of submergence unit matrix 2A, make the first fluid injection chamber 4B vertical with silicon chip direction of motion with the diagonal line of the drift angle below first liquid recycling cavity 5B.So just make the first liquid injection port vertical with the liquid flow direction of first liquid recovery port and the direction of scanning of silicon chip.
Silicon chip, in motion process, has traction action to immersion liquid, makes the immersion liquid in silicon chip direction of motion have trend outwardly.If do not reclaimed in time the immersion liquid in direction of motion, just easily cause leaking, and on the direction that direction of motion is contrary, for the traction action of silicon chip, liquid herein can reduce to some extent, if supplemented not in time, just may entrainment air inlet body at second liquid recovery port place.
Recovery holes array 7E bottom hermetic seal and micropore packoff 2 and square liquids recovery chamber 7D is arranged in direction, a square diagonal line is parallel with the direction of motion of silicon chip, the part that immersion liquid easily occurs to leak is distributed near diagonal line, this structure just extends the leak resistance of immersion liquid, thus make gap flow field be less likely to occur to leak, the sweep velocity of silicon chip can be improved.
Recovery holes array 7E is divided into stepped by square liquids recovery chamber 7D.Recovery holes array 7E on square liquids recovery chamber 7D is comparatively large relative to the distance of silicon chip, and the recovery holes array 7E outside square liquids recovery chamber 7D is less relative to the distance of silicon chip.This structure is equivalent to the height reducing liquid flow, thus adds the leak resistance of immersion liquid, can improve the sweep velocity of silicon chip.
In the motion process of silicon chip, open air-tight structure, sealing gas is at the conglobate airtight air curtain of submergence unit outermost shape, and the gas recovery structure of inner side makes sealing gas flow from outside to inside, utilize the pressure seal gap flow field of sealing gas, increase the leak resistance of immersion liquid.Due to the square configuration of square liquids recovery chamber 7D and recovery holes array 7E, and the octagon-shaped outside submergence unit bottom end cover 2C, make the pressure of sealing gas uneven in the pressure distribution at second liquid recovery port place, the pressure at drift angle place is larger, and pressure between drift angle is less, to working condition, there is better adaptability.

Claims (3)

1. for hermetic seal and the micropore packoff of immersed photoetching machine, the projection lens set (1) in immersed photoetching machine and be provided with hermetic seal and micropore packoff (2) between silicon chip (3); It is characterized in that: described hermetic seal and micropore packoff (2) comprise submergence unit matrix (2A), submergence unit upper end cover (2B), submergence unit bottom end cover (2C) and submergence unit hermetic seal end cap (2D); Described submergence unit matrix (2A) contacts with submergence unit upper end cover (2B) above, submergence unit matrix (2A) contacts with submergence unit hermetic seal end cap (2D) with submergence unit bottom end cover (2C) below successively, and is connected by screw fastening; Wherein:
1) submergence unit matrix (2A):
Submergence unit matrix (2A) has center reverse taper holes, taper hole large end in center is outwards the first fluid injection chamber (4B) and the first liquid recycling cavity (5B) of Relative distribution, first fluid injection chamber (4B) is connected with first reservoir channel (4A) of fold-line-shaped, and first liquid recycling cavity (5B) is connected with the first liquid recovery approach (5A) of fold-line-shaped, taper hole large end in center is outwards fluid injection chamber, right side second (6B1) and the fluid injection chamber, left side second (6B2) of Relative distribution, the second fluid injection chamber (6B1), right side is outwards connected with the right side second reservoir channel (6A1) of fold-line-shaped, the second fluid injection chamber (6B1), right side is connected with square fluid injection chamber (6C) downwards, the second fluid injection chamber (6B2), left side is outwards connected with the left side second reservoir channel (6A2) of fold-line-shaped, and fluid injection chamber, left side second (6B2) is connected with square fluid injection chamber (6C) downwards, right side second liquid recycling cavity (7B1) is had between fluid injection chamber, right side second (6B1) and the first fluid injection chamber (4B), right side second liquid recycling cavity (7B1) is outwards connected with right side second liquid recovery approach (7A1) of fold-line-shaped, right side second liquid recycling cavity (7B1) is connected with right side second liquid accumulator tank (7C1) downwards, right side second liquid accumulator tank (7C1) is inwardly connected with square liquids recovery chamber (7D), left side second liquid recycling cavity (7B2) is had between fluid injection chamber, left side second (6B2) and the first fluid injection chamber (5B), left side second liquid recycling cavity (7B2) is outwards connected with left side second liquid recovery approach (7A2) of fold-line-shaped, left side second liquid recycling cavity (7B2) is connected with second liquid accumulator tank (7C2) downwards, left side second liquid accumulator tank (7C2) is inwardly connected with square liquids recovery chamber (7D), the second fluid injection chamber (6B1), right side is outwards gas injection chamber (8B1), gas injection chamber, right side (8B1) is connected with right side gas injection passage (8A1), the second fluid injection chamber (6B2), left side is outwards gas injection chamber, left side (8B2), gas injection chamber, left side (8B2) is connected with left side gas injection passage (8A2), Top right gas recycling cavity (9B1) is had between gas injection chamber, right side (8B1) and first liquid recycling cavity (5B), Top right gas recycling cavity (9B1) is connected with the Top right gas recovery approach (9A1) of fold-line-shaped, left gas recycling cavity (9B2) is had between gas injection chamber, left side (8B2) and first liquid recycling cavity (4B), left gas recycling cavity (9B2) is connected with the left gas recovery approach (9A2) of fold-line-shaped, first reservoir channel (4A), right side second liquid recovery approach (7A1), right side gas injection passage (8A1), right side the second reservoir channel (6A1) and Top right gas recovery approach (9A1) are assembled to submergence unit matrix (2A) side, and be connected with exterior line by threaded hole, first liquid recovery approach (5A), left side second liquid recovery approach (7A2), left side gas injection passage (8A2), left side the second reservoir channel (6A2) and left gas recovery approach (9A2) are assembled to the opposite side of submergence unit matrix (2A), be connected with exterior line by threaded hole,
2) submergence unit upper end cover (2B):
Submergence unit upper end cover (2B) has central through hole;
3) submergence unit bottom end cover (2C):
Submergence unit bottom end cover (2C) has central square through hole, central square through hole is outwards the square liquid injection hole array (6D) of micropore composition, liquid injection hole array (6D) is downwards bottom end cover fluid injection chamber (6E), and liquid injection hole array (6D) is outwards the square recovery holes array (7E) of square micropore composition;
4) submergence unit hermetic seal end cap (2D):
Submergence unit hermetic seal end cap (2D) has central through hole, central through hole is outwards Top right gas recycling cavity (9C1) and left gas recycling cavity (9C2), Top right gas recycling cavity (9C1) is connected with central through hole with left gas recycling cavity (9C2), submergence unit hermetic seal end cap (2D) outermost is gas injection cushion chamber (8D), right side hermetic seal end cap gas injection chamber (8C1) and left side hermetic seal end cap gas injection chamber (8C2) is had between Top right gas recycling cavity (9C1) and left gas recycling cavity (9C2) circumference, right side hermetic seal end cap gas injection chamber (8C1) is outwards connected with gas injection cushion chamber (8D) with left side hermetic seal end cap gas injection chamber (8C2).
2. a kind of hermetic seal for immersed photoetching machine according to claim 1 and micropore packoff, it is characterized in that: described square fluid injection chamber (6C) is connected with liquid injection hole array (6D) downwards, square liquids recovery chamber (7D) is connected with recovery holes array (7E) downwards, gas injection chamber, right side (8B1) downwards right side hermetic seal end cap gas injection chamber (8C1) is connected, and gas injection chamber, left side (8B2) downwards and end cover gas injection chamber (8C2).
3. a kind of hermetic seal for immersed photoetching machine according to claim 1 and micropore packoff, it is characterized in that: the square round array that described liquid injection hole array (6D) is made up of circular port, the square round array that recovery holes array (7E) is made up of square opening.
CN201410172815.8A 2014-04-25 2014-04-25 For hermetic seal and the micropore packoff of immersed photoetching machine Active CN103969964B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410172815.8A CN103969964B (en) 2014-04-25 2014-04-25 For hermetic seal and the micropore packoff of immersed photoetching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410172815.8A CN103969964B (en) 2014-04-25 2014-04-25 For hermetic seal and the micropore packoff of immersed photoetching machine

Publications (2)

Publication Number Publication Date
CN103969964A CN103969964A (en) 2014-08-06
CN103969964B true CN103969964B (en) 2015-11-25

Family

ID=51239630

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410172815.8A Active CN103969964B (en) 2014-04-25 2014-04-25 For hermetic seal and the micropore packoff of immersed photoetching machine

Country Status (1)

Country Link
CN (1) CN103969964B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105045046B (en) * 2015-08-03 2017-03-29 浙江大学 A kind of hermetic seal and horizontal and vertical fluid injection retracting device for immersed photoetching machine
JP2024514056A (en) 2021-04-15 2024-03-28 エーエスエムエル ネザーランズ ビー.ブイ. Fluid handling systems, methods and lithographic apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1850181A1 (en) * 2004-09-20 2007-10-31 ASML Netherlands BV Lithographic projection apparatus and device manufacturing method
CN101403862A (en) * 2008-10-21 2009-04-08 浙江大学 Immersion liquid recovery vibration-damping control device used for photo-etching machine
CN101403861B (en) * 2008-10-21 2010-08-25 浙江大学 Immersion self-adapting seal control device used for photo-etching machine
CN103268059A (en) * 2013-05-29 2013-08-28 浙江大学 Multi-stage negative pressure recovery seal and gas seal device for immersed lithography machine

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170504A (en) * 2008-01-11 2009-07-30 Nikon Corp Stage device, and exposure apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1850181A1 (en) * 2004-09-20 2007-10-31 ASML Netherlands BV Lithographic projection apparatus and device manufacturing method
CN101403862A (en) * 2008-10-21 2009-04-08 浙江大学 Immersion liquid recovery vibration-damping control device used for photo-etching machine
CN101403861B (en) * 2008-10-21 2010-08-25 浙江大学 Immersion self-adapting seal control device used for photo-etching machine
CN103268059A (en) * 2013-05-29 2013-08-28 浙江大学 Multi-stage negative pressure recovery seal and gas seal device for immersed lithography machine

Also Published As

Publication number Publication date
CN103969964A (en) 2014-08-06

Similar Documents

Publication Publication Date Title
CN104035290B (en) A kind of hermetic seal for immersed photoetching machine and two-stage porous gas-liquid retracting device
CN100595678C (en) Immerging liquid recovering damping control device used for mask aligner
JP5044812B2 (en) Apparatus, wafer chuck assembly and method for reducing contamination in immersion lithography
CN104597720B (en) A kind of gas-liquid isolating device for immersed photoetching machine
CN102707580B (en) Hermetic sealing and gas-liquid separation and recovery device for immersed photoetching machine
CN105116688B (en) A kind of immersion liquid control device for immersed photoetching machine
CN102937777B (en) Gas-sealing and gas-liquid isolating device for immersed type photoetching machine
CN107991843A (en) A kind of fluid channel gas-liquid separation retracting device for immersed photoetching machine
CN101452219B (en) Submerge liquid supplying recovery controlling device for photoetching machine
CN103969964B (en) For hermetic seal and the micropore packoff of immersed photoetching machine
CN202615114U (en) Gas-tight sealing and gas-liquid separation recovery device for immersion photoetching machine
CN104570617B (en) Immersion flow field self-adapting seal method based on dynamic pressure detection
CN101408731B (en) Immerge control device for immersed photoetching machine
CN104965392A (en) Vertical recycling and air sealing device for immersion type photoetching machine
CN101452218B (en) Submerge self-adapting gas seal device for photoetching machine
CN103176368B (en) Gas-seal and gas-liquid vibration damping recovery device used in immersion lithographic machine
CN105045046B (en) A kind of hermetic seal and horizontal and vertical fluid injection retracting device for immersed photoetching machine
CN203025474U (en) Gas-sealing and gas-liquid isolating device for immersed photo-etching machine
CN103268059B (en) Multi-stage negative pressure recovery seal and gas seal device for immersed lithography machine
CN105807566A (en) Maintenance apparatus for immersion lithography machine immersion flow field
CN101634811B (en) Flexible seal and self-adaption recycling device for immersed photoetching machine
CN113138540B (en) Immersion liquid supply and recovery device with gas-liquid separation and recovery functions
CN104570618B (en) The immersion flow field sealing device on surface is replaced based on hydrophobe
CN100445872C (en) Liquid delivering and airtight device in submersible photoetching system
CN113138537B (en) Immersion liquid supply and recovery device for immersion lithography machine

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200714

Address after: No.99 Lixin Road, Qingshanhu street, Lin'an District, Hangzhou City, Zhejiang Province

Patentee after: ZHEJIANG QIER ELECTROMECHANICAL TECHNOLOGY Co.,Ltd.

Address before: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No.

Patentee before: ZHEJIANG University