CN103943670A - 超结集电区应变硅异质结双极晶体管 - Google Patents
超结集电区应变硅异质结双极晶体管 Download PDFInfo
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- CN103943670A CN103943670A CN201410146902.6A CN201410146902A CN103943670A CN 103943670 A CN103943670 A CN 103943670A CN 201410146902 A CN201410146902 A CN 201410146902A CN 103943670 A CN103943670 A CN 103943670A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 33
- 239000000470 constituent Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410146902.6A CN103943670B (zh) | 2014-04-12 | 2014-04-12 | 超结集电区应变硅异质结双极晶体管 |
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CN201410146902.6A CN103943670B (zh) | 2014-04-12 | 2014-04-12 | 超结集电区应变硅异质结双极晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN103943670A true CN103943670A (zh) | 2014-07-23 |
CN103943670B CN103943670B (zh) | 2016-10-05 |
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CN201410146902.6A Active CN103943670B (zh) | 2014-04-12 | 2014-04-12 | 超结集电区应变硅异质结双极晶体管 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106169498A (zh) * | 2016-07-30 | 2016-11-30 | 北京工业大学 | 高热稳定性超结应变Si/SiGe异质结双极晶体管 |
CN108258032A (zh) * | 2018-01-19 | 2018-07-06 | 重庆邮电大学 | 一种采用组合发射区的异质结双极晶体管及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080124881A1 (en) * | 2001-01-30 | 2008-05-29 | International Business Machines Corporation | INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY |
CN101866947A (zh) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | 硅锗异质结双极型晶体管 |
CN101937846A (zh) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT晶体管及其制造方法 |
US20130207206A1 (en) * | 2011-08-12 | 2013-08-15 | Nxp B.V. | Semiconductor device having au-cu electrodes, and method of manufacturing semiconductor device |
-
2014
- 2014-04-12 CN CN201410146902.6A patent/CN103943670B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080124881A1 (en) * | 2001-01-30 | 2008-05-29 | International Business Machines Corporation | INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY |
CN101866947A (zh) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | 硅锗异质结双极型晶体管 |
CN101937846A (zh) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT晶体管及其制造方法 |
US20130207206A1 (en) * | 2011-08-12 | 2013-08-15 | Nxp B.V. | Semiconductor device having au-cu electrodes, and method of manufacturing semiconductor device |
Non-Patent Citations (1)
Title |
---|
刘静、郭飞、高勇: "超结硅锗碳异质结双极晶体管机理研究与特性分析优化", 《物理学报》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106169498A (zh) * | 2016-07-30 | 2016-11-30 | 北京工业大学 | 高热稳定性超结应变Si/SiGe异质结双极晶体管 |
CN106169498B (zh) * | 2016-07-30 | 2019-03-05 | 北京工业大学 | 高热稳定性超结应变Si/SiGe异质结双极晶体管 |
CN108258032A (zh) * | 2018-01-19 | 2018-07-06 | 重庆邮电大学 | 一种采用组合发射区的异质结双极晶体管及其制造方法 |
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Publication number | Publication date |
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CN103943670B (zh) | 2016-10-05 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191211 Address after: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Patentee after: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Patentee before: Beijing University of Technology |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: Yang Miao Zhen Xin Yang Cun, Hanjiang District, Yangzhou City, Jiangsu Province Patentee after: Yangzhou Xinshan Electronic Technology Co.,Ltd. Address before: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Patentee before: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. |
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TR01 | Transfer of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Super junction collector strain silicon heterojunction bipolar transistor Effective date of registration: 20231116 Granted publication date: 20161005 Pledgee: Yangzhou Branch of Bank of Jiangsu Co.,Ltd. Pledgor: Yangzhou Xinshan Electronic Technology Co.,Ltd. Registration number: Y2023980065573 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |