CN108649067B - 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 - Google Patents
一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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CN201810437234.0A CN108649067B (zh) | 2018-05-09 | 2018-05-09 | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 |
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CN109682863B (zh) * | 2018-12-10 | 2020-09-08 | 华中科技大学 | 基于TMDCs-SFOI异质结的气体传感器及其制备方法 |
CN110867486B (zh) * | 2019-11-20 | 2020-11-20 | 燕山大学 | 高压太赫兹应变SiGe/InGaP异质结双极晶体管及其制备方法 |
CN111244169B (zh) * | 2020-03-24 | 2021-03-19 | 燕山大学 | 一种异质结双极晶体管及其制备方法 |
CN111739939A (zh) * | 2020-07-06 | 2020-10-02 | 重庆邮电大学 | 一种高频硅锗异质结双极晶体管及其制造方法 |
CN112436051A (zh) * | 2020-11-03 | 2021-03-02 | 西安电子科技大学 | 一种具有对称阶梯氧埋层的4H-SiC金属半导体场效应晶体管 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102800589A (zh) * | 2012-08-24 | 2012-11-28 | 中国科学院上海微***与信息技术研究所 | 一种基于SOI的SiGe-HBT晶体管的制备方法 |
CN107342319A (zh) * | 2017-06-21 | 2017-11-10 | 燕山大学 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
CN107546264A (zh) * | 2016-06-29 | 2018-01-05 | 格罗方德半导体公司 | 具有应力分量的异质接面双极晶体管 |
CN107887430A (zh) * | 2017-11-09 | 2018-04-06 | 重庆邮电大学 | 衬底施加单轴应力的硅锗异质结双极晶体管及其制造方法 |
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US6346453B1 (en) * | 2000-01-27 | 2002-02-12 | Sige Microsystems Inc. | Method of producing a SI-GE base heterojunction bipolar device |
US7750371B2 (en) * | 2007-04-30 | 2010-07-06 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor structure and method |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800589A (zh) * | 2012-08-24 | 2012-11-28 | 中国科学院上海微***与信息技术研究所 | 一种基于SOI的SiGe-HBT晶体管的制备方法 |
CN107546264A (zh) * | 2016-06-29 | 2018-01-05 | 格罗方德半导体公司 | 具有应力分量的异质接面双极晶体管 |
CN107342319A (zh) * | 2017-06-21 | 2017-11-10 | 燕山大学 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
CN107887430A (zh) * | 2017-11-09 | 2018-04-06 | 重庆邮电大学 | 衬底施加单轴应力的硅锗异质结双极晶体管及其制造方法 |
Non-Patent Citations (1)
Title |
---|
《不同基区Ge组分分布对SiGeHBT特性的影响》;张志华等;《微电子学》;20131231;第43卷(第6期);859-862,866 * |
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Inventor after: Zhou Chunyu Inventor after: Guo Defeng Inventor after: Wang Guanyu Inventor after: Xu Chao Inventor after: Jiang Wei Inventor after: Tan Jinbo Inventor before: Zhou Chunyu Inventor before: Guo Defeng Inventor before: Wang Guanyu Inventor before: Xu Chao Inventor before: Jiang Wei Inventor before: Tan Jinbo |
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