CN103904186A - Semiconductor device based on graphene electrode and manufacturing method thereof - Google Patents
Semiconductor device based on graphene electrode and manufacturing method thereof Download PDFInfo
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- CN103904186A CN103904186A CN201410121150.8A CN201410121150A CN103904186A CN 103904186 A CN103904186 A CN 103904186A CN 201410121150 A CN201410121150 A CN 201410121150A CN 103904186 A CN103904186 A CN 103904186A
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a semiconductor device based on a graphene electrode. The semiconductor device based on the graphene electrode is formed by sequentially combining a substrate layer, a first semiconductor layer, an active layer, a second semiconductor layer and a graphene electrode layer. The graphene electrode layer is fixedly combined with the second semiconductor layer through an intensifier electrode in a pining fixing mode, so that materials of the intensifier electrode and graphene materials of the graphene electrode layer are combined mutually into a combination electrode. The invention further discloses a manufacturing method of the semiconductor device based on the graphene electrode. According to the manufacturing method, a graphene film and collaborative conducting materials form the combination electrode, the combination electrode is arranged on a system which is sequentially composed of the substrate, a conductor layer, the active layer and the semiconductor layers, and then a complete device structure is formed. According to the semiconductor device based on the graphene electrode and the manufacturing method of the semiconductor device, the graphene electrode forms the combination structure with pining fixed connection adopted, the adhesion between graphene and the substrate is improved, and the current distribution in the device can be improved through patterning control over the graphene electrode layer.
Description
Technical field
The present invention relates to a kind of semiconductor device and preparation technology thereof, also relate to one and there is Graphene electrodes and preparation method thereof, be applied to semiconductor device structure and preparing technical field.
Background technology
Graphene is a kind of crystal of the monoatomic layer by the tightly packed one-tenth of carbon atom, has the character of a lot of uniquenesses, as high specific area, good thermal stability, good thermal conduction characteristic etc.These excellent performances make Graphene have good application prospect in fields such as nano electron device, gas sensor, ultracapacitor and stored energies.Especially, Graphene is in the high transmitance of visible light wave range and good electricity and heat conveyance performance, and when 550nm, the theoretical transmitance of single-layer graphene can reach 97.7%, makes it potentially become a kind of desirable transparent conductive material.
In recent years, adopt Graphene and composite material thereof a lot of as the research of electrode material, also obtained certain effect, but, it is pointed out that in dielectric substrate, preparing high-quality Graphene at present also exists certain technology barrier.The method adopting is at present mostly first to prepare Graphene or graphene oxide, adopt again certain method to be transferred to target substrate, between Graphene and substrate, rely on Van der Waals force to be combined, easily in follow-up technique, occur separation or the phenomenon coming off, thereby affect the performance of device.
Summary of the invention
In order to solve prior art problem, the object of the invention is to overcome the deficiency that prior art exists, a kind of semiconductor device based on Graphene electrodes and preparation method thereof is provided, make Graphene electrodes form the composite construction that pinning is fixedly connected with, improve the adhesiveness between Graphene and substrate, and can, by the control of the patterning to Graphene electrodes layer, improve the CURRENT DISTRIBUTION in device.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
A kind of semiconductor device based on Graphene electrodes, successively by substrate layer, the first semiconductor layer, active layer, the second semiconductor layer and Graphene electrodes layer are in conjunction with formation, adopt intensifier electrode by pinning secure bond mode by Graphene electrodes layer secure bond on the second semiconductor layer, utilize intensifier electrode to penetrate Graphene electrodes layer, and make an end of intensifier electrode directly contact and be fixedly connected with the second semiconductor layer, another end of intensifier electrode is pressed abd fixed on Graphene electrodes layer on the second semiconductor layer, and make to be fixed combination by Van der Waals force between intensifier electrode surface and surface, Graphene electrodes layer duct, in the time that the first semiconductor layer is p type semiconductor layer, the second semiconductor layer is n type semiconductor layer, or in the time that the first semiconductor layer is n type semiconductor layer, the second semiconductor layer is p type semiconductor layer, intensifier electrode adopts metal, conducting metal oxide or conducing composite material to make, and the material of intensifier electrode and the grapheme material of Graphene electrodes layer are compounded to form mutually in conjunction with electrode.
As the preferred technical scheme of the present invention, be all through the cross section of intensifier electrode part and the cross section in Graphene electrodes layer duct of Graphene electrodes layer the figure of setting shape.
Above-mentioned Graphene electrodes layer preferably adopts graphene film, preferably has the monatomic graphite linings of 1-10 layer.
The material of above-mentioned intensifier electrode preferably adopts any one metal material in Au, Ag, Cr, Pt, Ni, Ti, Rh and Zn or the alloy material of any several metals; Or preferably adopt tin indium oxide, zinc oxide, be added with the zinc oxide of gallium and be added with any one metal oxide materials in the zinc oxide of aluminium or the composite material of any several metal oxides; The material of above-mentioned intensifier electrode is Au especially preferably.
The preparation method who the present invention is based on the semiconductor device of Graphene electrodes, comprises the following steps:
A. prepare required graphene film, graphene film preferably has the monatomic graphite linings of 1-10 layer, preferably adopt chemical vapour deposition technique, oxidation-reduction method or mechanical stripping legal system are for graphene film, graphene film is arranged on successively by substrate, n type semiconductor layer, active layer, on the p type semiconductor layer of a kind of semiconductor device system that p type semiconductor layer forms, or graphene film is arranged on successively by substrate, p type semiconductor layer, active layer, on the n type semiconductor layer of the another kind of semiconductor device system that n type semiconductor layer forms, graphene film and p type semiconductor layer are directly contacted and secure bond, or graphene film and n type semiconductor layer are directly contacted and secure bond, above-mentioned substrate is transparent substrates or nontransparent substrate, and transparent substrates preferably adopts glass, quartz or PET, and nontransparent substrate preferably adopts sapphire or silicon chip,
B. the graphene film being arranged in above-mentioned steps a on p type semiconductor layer or on n type semiconductor layer being carried out graphically, is graphene film fabricating patterned hole; The graphical hole of graphene film preferably adopts any one manufacture method in photoetching, plasma etching, laser ablation or the method for assembling of any several manufacture methods;
C. by collaborative deposition in the patterning hole of the graphene film of making in above-mentioned steps b electric conducting material, form complete device architecture, make graphene film and the preparation of collaborative electric conducting material form combination electrode layer, collaborative electric conducting material is metal, conducting metal oxide or conducing composite material, collaborative electric conducting material and the tight secure bond of p type semiconductor layer, or collaborative electric conducting material and N type semiconductor be tight secure bond layer by layer, between the grapheme material in the duct of collaborative electric conducting material and graphene film, be fixed combination by Van der Waals force, collaborative electric conducting material by pinning secure bond mode by graphene film secure bond on p type semiconductor layer or on n type semiconductor layer, preferably any one manufacture method in employing vacuum thermal evaporation, electron beam deposition, magnetron sputtering or the method for assembling of any several manufacture methods, collaborative electric conducting material is deposited in the graphical hole of graphene film, collaborative electric conducting material is combined fixing with graphene film, collaborative electric conducting material preferably adopts any one metal material in Au, Ag, Cr, Pt, Ni, Ti, Rh and Zn or the alloy material of any several metals, or preferably adopt tin indium oxide, zinc oxide, be added with the zinc oxide of gallium and be added with any one metal oxide materials in the zinc oxide of aluminium or the composite material of any several metal oxides, above-mentioned collaborative electric conducting material is Au especially preferably.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. the present invention utilizes the good contact between electrode material and semiconductor, on the patterned basis of Graphene, has realized the pinning to graphene film, effectively improved Graphene and substrate adhere to bad, the easily separated problem coming off;
2. the present invention by the optimization to graphene film figure, can realize the improvement to CURRENT DISTRIBUTION, improves the electric property of integral device with this.
Accompanying drawing explanation
Fig. 1 is the hierarchical structure schematic diagram of the semiconductor device of the embodiment of the present invention one based on Graphene electrodes.
Fig. 2 is the cutaway view along A-A line in Fig. 1.
Fig. 3 is the structural representation of the semiconductor device of the embodiment of the present invention two based on Graphene electrodes.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
embodiment mono-:
In the present embodiment, referring to Fig. 1 and Fig. 2, a kind of semiconductor device based on Graphene electrodes, successively by substrate layer 6, the first semiconductor layer 5, active layer 4, the second semiconductor layer 3 and Graphene electrodes layer 2 are in conjunction with forming, intensifier electrode 1 is adopted and is made of gold gold electrode, substrate layer 6 is sapphire, the first semiconductor layer 5 is n type gallium nitride, the second semiconductor layer 3 is P type gallium nitride, make gold electrode pass through pinning secure bond mode by Graphene electrodes layer 2, secure bond is on P type gallium nitride, utilize gold electrode to penetrate Graphene electrodes layer 2, and make an end of gold electrode directly contact and be fixedly connected with P type gallium nitride, another end of gold electrode is pressed abd fixed on Graphene electrodes layer 2 on P type gallium nitride, and make to be fixed combination by Van der Waals force between gold electrode and Graphene electrodes layer 2 surface, duct, the grapheme material of gold electrode and Graphene electrodes layer 2 is compounded to form mutually in conjunction with electrode.In the present embodiment, referring to Fig. 1 and Fig. 2, be all through the cross section of gold electrode part and the cross section in Graphene electrodes layer 2 duct of Graphene electrodes layer 2 figure of setting shape, Graphene electrodes layer 2 is provided with a duct.
In the present embodiment, referring to Fig. 1 and Fig. 2, the preparation method of the semiconductor device based on Graphene electrodes, comprises the following steps:
A. the preparation of graphene film: be 25 microns by thickness, the Copper Foil that the area of purity 99.8wt% is 1cmX1cm, cleans 20 minutes in acetone, isopropyl alcohol, deionized water for ultrasonic successively, and nitrogen dries up; Then be placed in CVD reative cell, be evacuated in reative cell pressure drop to 1Pa, adopt hydrogen and argon gas mist that hydrogen volume content is 10%, mist is passed in CVD reative cell, and maintain in CVD reative cell gas pressure to normal pressure, and repeating after this step 3 time, control mixed gas flow is 100sccm, be warming up to 1000 degree, pass into carbon source presoma CH
4/ C
2h
4/ C
2h
2, flow is 20sccm, under pressure 650Pa, is incubated 30 minutes, cuts off carbon source presoma, keeps mist flow velocity constant, is cooled to room temperature;
B. graphene film shifts: will be in above-mentioned steps a graphene film spin coating one deck photoresist in gained copper substrate, 180 degree 1min are dried, be placed in 1mol/L iron nitrate aqueous solution etching and remove copper substrate, rinsing 3 times in deionized water, select to there is sapphire/n type gallium nitride/substrate of P type gallium nitride structure system fishes for, in vacuum drying chamber, within 3 hours, dry for 70 ℃, graphene film and P type gallium nitride are directly contacted and secure bond, form sapphire/n type gallium nitride/P type gallium nitride/graphene-structured;
C. photoetching cathode pattern, adopts inductively coupled plasma to be etched to and exposes n type gallium nitride, wherein, adopts O
2and N
2h
2source of the gas etching graphene film, Cl
2and BCH
3source of the gas etching epitaxial layer of gallium nitride, graphene film is graphical, according to required anode metal figure, adopt specific mask plate to carry out photoetching, plasma etching is removed the graphene film part exposing, adopt subsequently oxygen gas plasma etching to remove photoresist, form patterning hole at graphene film, as the graphical metal pinning pattern in Fig. 2;
D. metal deposition: will adopt means of electron beam deposition deposition 100nm gold as electrode in the patterning hole of the graphene film of making in above-mentioned steps c, form complete device architecture, make graphene film and gold electrode form combination electrode layer, gold electrode and the tight secure bond of P type gallium nitride semiconductor layers, between the grapheme material in the duct of gold electrode and graphene film, be fixed combination by Van der Waals force, gold electrode by pinning secure bond mode by graphene film secure bond on P type gallium nitride semiconductor layers.
In the present embodiment, referring to Fig. 1 and Fig. 2, graphically and the gold deposition graphical by graphene film of gold electrode prepared gold electrode two steps and formed, gold electrode penetrates graphene film and directly contacts with semiconductor layer, the present embodiment utilizes gold electrode material and semi-conductive good contact to realize pinning to Graphene, has solved the problem of the poor adhesion of Graphene and substrate, and by the optimization to electrode pattern, improve CURRENT DISTRIBUTION, improved bright dipping and the heat dispersion of device.
embodiment bis-:
The present embodiment and embodiment mono-are basic identical, and special feature is:
In the present embodiment, referring to Fig. 3, a kind of semiconductor device based on Graphene electrodes, successively by substrate layer 6, the first semiconductor layer 5, active layer 4, the second semiconductor layer 3 and Graphene electrodes layer 2 are in conjunction with forming, intensifier electrode 1 adopts ITO/ZnO to make ITO/ZnO electrode, substrate layer 6 is SiC, the first semiconductor layer 5 is n type gallium nitride, the second semiconductor layer 3 is P type gallium nitride, make ITO/ZnO electrode pass through pinning secure bond mode by Graphene electrodes layer 2, secure bond is on P type gallium nitride, utilize ITO/ZnO electrode to penetrate Graphene electrodes layer 2, and make an end of ITO/ZnO electrode directly contact and be fixedly connected with P type gallium nitride, another end of ITO/ZnO electrode is pressed abd fixed on Graphene electrodes layer 2 on P type gallium nitride, and make to be fixed combination by Van der Waals force between ITO/ZnO electrode and Graphene electrodes layer 2 surface, duct, the grapheme material of ITO/ZnO electrode and Graphene electrodes layer 2 is compounded to form mutually in conjunction with electrode.In the present embodiment, referring to Fig. 3, the cross section of ITO/ZnO electrode part and the cross section in Graphene electrodes layer 2 duct through Graphene electrodes layer 2 are all the figure of setting shape, Graphene electrodes layer 2 is provided with two ducts, the present embodiment adopts multichannel ITO/ZnO electrode, ITO/ZnO electrode material is contacted better with semiconductor, Graphene is carried out to more firmly pinning, simultaneously by the optimization to electrode pattern, more effectively improve CURRENT DISTRIBUTION, improved bright dipping and the heat dispersion of device.
In the present embodiment, referring to Fig. 3, the preparation method of the semiconductor device based on Graphene electrodes, comprises the following steps:
1. the preparation of graphene film: the epitaxial wafer will with the structure being formed by SiC/N type gallium nitride/P type gallium nitride successively cleans 20 minutes in acetone, isopropyl alcohol, deionized water for ultrasonic, nitrogen dries up, the Au that the nickel that deposit thickness is 25nm successively and thickness are 10nm, be placed in CVD reative cell, adopt hydrogen and argon gas mist that hydrogen volume content is 10%, mist is passed in CVD reative cell, and control mixed gas flow is 80sccm, passes into carbon source presoma CH
4/ C
2h
4/ C
2h
2, flow 10sccm, is warming up to 500 degrees Celsius, under pressure 650Pa, is incubated 10 minutes, cuts off carbon source presoma, keeps gas flow rate constant, is cooled to room temperature;
2. photoetching cathode pattern, adopts inductively coupled plasma to be etched to and exposes n type gallium nitride, wherein, adopts O
2and N
2h
2source of the gas etching graphene film, Cl
2and BCH
3source of the gas etching epitaxial layer of gallium nitride, graphene film is graphical, according to required anode metal figure, adopt specific mask plate to carry out photoetching, plasma etching is removed the graphene film part exposing, adopt subsequently oxygen gas plasma etching to remove photoresist, form patterning hole at graphene film;
3. metal deposition: be that the ITO/ZnO of 100nm is as collaborative conductive electrode material using adopt means of electron beam deposition deposit thickness in 2. in the patterning hole of graphene film of making in above-mentioned steps, form complete device architecture, make graphene film and ITO/ZnO electrode form combination electrode layer, ITO/ZnO electrode and the tight secure bond of P type gallium nitride semiconductor layers, between the grapheme material in the duct of ITO/ZnO electrode and graphene film, be fixed combination by Van der Waals force, be ITO/ZnO electrode by pinning secure bond mode by graphene film secure bond on P type gallium nitride semiconductor layers.
In the present embodiment, adopt by SiC/N type gallium nitride/P type gallium nitride form structure epitaxial wafer directly in CVD reative cell Direct precipitation prepare graphene film, do not need to carry out the transfer of graphene film, make the preparation technology of the semiconductor device based on Graphene electrodes simpler and more direct and be easy to control, effectively prevent from causing in device preparation process graphene film breakage, also effectively prevent the introducing of impurity, can prepare high-quality desirable device.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; can also make multiple variation according to the object of innovation and creation of the present invention; the change made under all Spirit Essences according to technical solution of the present invention and principle, modification, substitute, combination, simplify; all should be equivalent substitute mode; as long as goal of the invention according to the invention; only otherwise deviate from the know-why and the inventive concept that the present invention is based on semiconductor device of Graphene electrodes and preparation method thereof, all belong to protection scope of the present invention.
Claims (10)
1. the semiconductor device based on Graphene electrodes, successively by substrate layer (6), the first semiconductor layer (5), active layer (4), the second semiconductor layer (3) and Graphene electrodes layer (2) are in conjunction with forming, it is characterized in that: adopt intensifier electrode (1) by pinning secure bond mode by described Graphene electrodes layer (2) secure bond on described the second semiconductor layer (3), utilize intensifier electrode (1) to penetrate described Graphene electrodes layer (2), and make an end of described intensifier electrode (1) directly contact and be fixedly connected with described the second semiconductor layer (3), another end of described intensifier electrode (1) is pressed abd fixed on described Graphene electrodes layer (2) on described the second semiconductor layer (3), and make to be fixed combination by Van der Waals force between described intensifier electrode (1) surface and described Graphene electrodes layer (2) surface, duct, in the time that described the first semiconductor layer (5) is p type semiconductor layer, described the second semiconductor layer (3) is n type semiconductor layer, or in the time that described the first semiconductor layer (5) is n type semiconductor layer, described the second semiconductor layer (3) is p type semiconductor layer, described intensifier electrode (1) adopts metal, conducting metal oxide or conducing composite material to make, and makes the material of described intensifier electrode (1) and the grapheme material of described Graphene electrodes layer (2) the formation combination electrode that mutually combines.
2. the semiconductor device based on Graphene electrodes according to claim 1, is characterized in that: the figure that is all setting shape through cross section and the cross section in described Graphene electrodes layer (2) duct of described intensifier electrode (1) part of described Graphene electrodes layer (2).
3. the semiconductor device based on Graphene electrodes according to claim 2, is characterized in that: described Graphene electrodes layer (2) is graphene film, has the monatomic graphite linings of 1-10 layer.
4. according to the semiconductor device based on Graphene electrodes described in any one in claim 1～3, it is characterized in that: the described material that connects intensifier electrode (1) is any one metal material in Au, Ag, Cr, Pt, Ni, Ti, Rh and Zn or the alloy material of any several metals; Or for tin indium oxide, zinc oxide, be added with the zinc oxide of gallium and be added with any one metal oxide materials in the zinc oxide of aluminium or the composite material of any several metal oxides.
5. a preparation method for the semiconductor device based on Graphene electrodes described in claim 1, is characterized in that, comprises the following steps:
A. prepare required graphene film, on the p type semiconductor layer of a kind of semiconductor device system that graphene film is arranged on formed by substrate, n type semiconductor layer, active layer, p type semiconductor layer successively, or on the n type semiconductor layer of the another kind of semiconductor device system that graphene film is arranged on formed by substrate, p type semiconductor layer, active layer, n type semiconductor layer successively, graphene film and p type semiconductor layer are directly contacted and secure bond, or graphene film and n type semiconductor layer are directly contacted and secure bond;
B. the graphene film being arranged in above-mentioned steps a on p type semiconductor layer or on n type semiconductor layer being carried out graphically, is graphene film fabricating patterned hole;
C. by collaborative deposition in the patterning hole of the graphene film of making in above-mentioned steps b electric conducting material, form complete device architecture, make graphene film and the preparation of collaborative electric conducting material form combination electrode layer, described collaborative electric conducting material is metal, conducting metal oxide or conducing composite material, described collaborative electric conducting material and the tight secure bond of p type semiconductor layer, or described collaborative electric conducting material and N type semiconductor be tight secure bond layer by layer, between the grapheme material in the duct of described collaborative electric conducting material and described graphene film, be fixed combination by Van der Waals force, be described collaborative electric conducting material by pinning secure bond mode by graphene film secure bond on p type semiconductor layer or on n type semiconductor layer.
6. the preparation method of the semiconductor device based on Graphene electrodes according to claim 5, it is characterized in that: in above-mentioned steps b, any one manufacture method in the graphical hole selection photoetching of described graphene film, plasma etching, laser ablation or the method for assembling of any several manufacture methods.
7. the preparation method of the semiconductor device based on Graphene electrodes according to claim 5, it is characterized in that: in above-mentioned steps c, any one manufacture method in selection vacuum thermal evaporation, electron beam deposition, magnetron sputtering or the method for assembling of any several manufacture methods, collaborative electric conducting material is deposited in the graphical hole of described graphene film, collaborative electric conducting material is combined fixing with graphene film.
8. according to the preparation method of the semiconductor device based on Graphene electrodes described in any one in claim 5～7, it is characterized in that: in above-mentioned steps c, described collaborative electric conducting material is any one metal material in Au, Ag, Cr, Pt, Ni, Ti, Rh and Zn or the alloy material of any several metals; Or for tin indium oxide, zinc oxide, be added with the zinc oxide of gallium and be added with any one metal oxide materials in the zinc oxide of aluminium or the composite material of any several metal oxides.
9. according to the preparation method of the semiconductor device based on Graphene electrodes described in any one in claim 5～7, it is characterized in that: in above-mentioned steps a, graphene film has the monatomic graphite linings of 1-10 layer, adopts chemical vapour deposition technique, oxidation-reduction method or mechanical stripping legal system for graphene film.
10. according to the preparation method of the semiconductor device based on Graphene electrodes described in any one in claim 5～7, it is characterized in that: in above-mentioned steps a, described substrate is transparent substrates or nontransparent substrate, transparent substrates adopts glass, quartz or PET, and nontransparent substrate adopts sapphire or silicon chip.
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| CN104319320A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip of novel composite transparent electrode and manufacturing method of LED chip |
| CN104465915A (en) * | 2014-12-17 | 2015-03-25 | 聚灿光电科技(苏州)有限公司 | Led chip and manufacturing method thereof |
| CN104659178A (en) * | 2015-03-09 | 2015-05-27 | 武汉大学 | Power type three-dimensional LED light-emitting device and manufacturing method thereof |
| CN104810455A (en) * | 2015-04-30 | 2015-07-29 | 南京大学 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
| CN106848005A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Lift flip LED chips of brightness and preparation method thereof |
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| CN104319320A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip of novel composite transparent electrode and manufacturing method of LED chip |
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| CN106848005A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Lift flip LED chips of brightness and preparation method thereof |
| CN107785466A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | A kind of transparency LED based on Graphene electrodes and preparation method thereof |
| CN110137336A (en) * | 2019-06-17 | 2019-08-16 | 上海工程技术大学 | Ultraviolet leds manufacturing method of chip and ultraviolet leds chip |
| CN112489848A (en) * | 2020-12-07 | 2021-03-12 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor radiation battery |
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Application publication date: 20140702 |