CN104810455B - Ultraviolet semiconductor luminescent device and its manufacture method - Google Patents
Ultraviolet semiconductor luminescent device and its manufacture method Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/405—Reflective materials
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention discloses a kind of ultraviolet semiconductor luminescent device and its manufacture method.The light emitting semiconductor device includes the main epitaxial structure layer being made up of n-layer, quantum well layer and p-type layer and p-type, n-type electrode, Graphene Ag nanometer composite layers and conductive reflective are also sequentially provided with the p-type layer, the Graphene Ag nanometer composite layers form Ohmic contact with p-type layer.Further, the Graphene Ag nanometer composite layers include：The Ag layer of nanomaterial in p-type layer is formed at, the Ag layer of nanomaterial includes Ag nano dots and/or Ag nano wires and the graphene film being covered in the Ag layer of nanomaterial；Or, graphene quantum dot loaded Ag Nanocomposites body layer.Light emitting semiconductor device of the invention has the advantages that external quantum efficiency is high, light extraction efficiency is high, cut-in voltage is low, thermal diffusivity is good, stability is high, and preparation process is simple is controllable, with low cost, is suitable to industrialized production.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly a kind of ultraviolet semiconductor luminescent device and its manufacturer
Method, the light emitting semiconductor device can be used for the fields such as traffic, medical treatment, display and white-light illuminating, belong to photoelectron technical field.
Background technology
GaN base is ultraviolet/deep-UV light-emitting diode (LED) have small volume, long lifespan, efficiency high, environmental protection, energy-conservation it is latent
In advantage, in the aspect existing mercury of substitution such as industrial solidification, sterilization, Water warfare, medical treatment and biochemistry, high-density optical record
The ultraviolet sources such as lamp, gas laser, there is important application prospect and the wide market demand.
LED chip is generally divided into formal dress, upside-down mounting and vertical stratification.Existing blue light and White light LED technology are in positive assembling structure
Middle to use ITO as electrically conducting transparent layer material, inverted structure is then using Ag as high reflection layer material, but they are in ultraviolet band
All there is a problem of that extinction is larger.
In order to solve the problems, such as ultraviolet light absorption, in formal dress ultraviolet LED, there is research to be received using Graphene, CNT and Ag
Rice composite construction does transparency conducting layer, such that it is able to improve ultraviolet LED performance.Such as publication (publication number CN104009141A)
Composite construction as current extending is formed on carbon nano-tube film by the way that Ag nano wires are uniformly coated with, ultraviolet LED is improved
Photoelectric transformation efficiency.When carbon nano-tube film light transmittance is about 80% or so, sheet resistance is about 103Ω/sq orders of magnitude；And individual layer
And the light transmittance of bilayer graphene, more than 95%, sheet resistance is about 102Ω/sq orders of magnitude.By the graphene film for shifting
The transparent conductive electrode layer that covering silver nano line is formed makes ultraviolet LED performance further improve, the light permeable rate 86.3% under 375nm,
Sheet resistance about 30 Ω/sq, reduce ultraviolet LED operating voltage and improve light extraction efficiency (bibliography " Graphene-
silver nanowire hybrid structure as a transparent and current spreading
electrode in ultraviolet light emitting diodes."Applied Physics Letters,2013,
103(5))。
But above-mentioned transparency conducting layer that surface resistance is still present is larger, so as to cause current expansion limited in one's ability；By electrode
The electric current of injection need to flow transversely through transparency conducting layer, cause current crowding.The cut-in voltage that makes formal dress ultraviolet LED is larger, light extraction
Efficiency is low.
Meanwhile, there is heat dissipation problem in formal dress ultraviolet LED.Be typically due to the less efficient of ultraviolet LED, thus demand light work(
Rate is generally larger, causes the caloric value of chip larger.And Sapphire Substrate thermal conductivity is poor (35W/mK), adding die bond causes
Thermal resistance, therefore the UV LED chip thermal resistance of positive assembling structure is larger, is unfavorable for light efficiency and the reliability lifting of ultraviolet LED.
Upside-down mounting can effectively solve the above-mentioned deficiency of forward LED with vertical stratification by adding metallic conductive reflective layer.Will
Metallic conductive reflective layer makes electric current be spread evenly from electrode to active area as current extending；Heat is directly passed simultaneously
Thermal conductivity substrate higher is led, then by radiator heat-dissipation, its thermal resistance is more much smaller than positive assembling structure, thus it is more potential and should
With value.
However, the ultraviolet LED of upside-down mounting and vertical stratification must use high reflection, low-resistance p-type Ohmic contact, so as to carry
Device light efficiency high, prior art also lacks effective solution.Ag is remarkably decreased in ultraviolet band reflectivity and ITO is to ultraviolet
The strong absorption of light, has been unsuitable as the p-type ohmic contact material of the ultraviolet LED of upside-down mounting and vertical stratification, meanwhile, in ultraviolet waves
Section has the metal Al of very high reflectance, it is difficult to the Ohmic contact formed with p-GaN or p-AlGaN.
The content of the invention
It is a primary object of the present invention to provide a kind of purple with high reflection, low-resistance p-type Ohmic contact
Outer semiconductor luminescent device, to overcome deficiency of the prior art.
Another object of the present invention is to provide a kind of method for manufacturing the ultraviolet semiconductor luminescent device.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
A kind of ultraviolet semiconductor luminescent device, including the epitaxial structure being mainly made up of n-layer, quantum well layer and p-type layer
Layer and p-type, n-type electrode, it is characterised in that be also sequentially provided with Graphene-Ag nanometer composite layers in the p-type layer and conduction is anti-
Layer is penetrated, the Graphene-Ag nanometer composite layers form Ohmic contact with p-type layer.
Used as more one of preferred embodiment, the Graphene-Ag nanometer composite layers include：
The Ag layer of nanomaterial in p-type layer is formed at, the Ag layer of nanomaterial includes Ag nano dots and/or Ag nanometers
Line；
And, it is covered in the graphene film in the Ag layer of nanomaterial.
Among one more specifically embodiment, the Ag layer of nanomaterial is Ag nano-dot layers.For example, the graphite
Alkene-Ag nanometer composite layers are the Ag nano-dot layers that graphene film covering thin layer Ag annealing is obtained.
Among one more specifically embodiment, the Ag layer of nanomaterial is Ag nano wire layers.
More preferred, the particle diameter of foregoing Ag nano dots is 10nm~1 μm.
More preferred, a diameter of 5~100nm of foregoing Ag nano wires, length is 5~100 μm.
More preferred, the foregoing graphites alkene film number of plies is single or multiple lift, such as 2~10 layers.
Used as more one of preferred embodiment, the Graphene-Ag nanometer composite layers are negative including graphene quantum dot
Carry Ag Nanocomposites body layer.
Further, the particle diameter of wherein graphene quantum dot loaded Ag Nanocomposites body is preferably 5~100nm.
As more one of preferred embodiment, intermediate layer is sequentially formed with the Graphene-Ag nanometer composite layers
And conductive reflective.
As more one of preferred embodiment, in being also formed between the Ag layer of nanomaterial and graphene film
Interbed.
Among a specific embodiment, cushion that epitaxial structure layer may include to sequentially form, N-shaped AlGaN layer,
Multiple quantum well layer and p-type layer etc..
Further, the conductive reflective is electrically connected with p-type electrode.
Further, the conductive reflective can be selected but be not limited to metallic reflector, such as Al reflecting layer, but not limited
In this.
More preferred, the thickness in aforesaid conductive reflecting layer is 0.1~3 μm.
Further, the material in the intermediate layer is preferably Cr, but not limited to this.
Further, the material of the p-type layer is preferably p-AlGaN, but not limited to this.
Further, the light emitting semiconductor device is preferably inverted structure or vertical stratification, but not limited to this.
Further, the light emitting semiconductor device is GaN base LED chip.
A kind of method for manufacturing the ultraviolet semiconductor luminescent device, including：
In Grown epitaxial structure layer；
It is processed for epitaxial structure layer, and n-type electrode is formed in n-layer, graphite is formed in p-type layer
Alkene-Ag nanometer composite layers, and Graphene-Ag nanometer composite layers is formed Ohmic contact with p-type layer；
And, conductive reflective is formed on Graphene-Ag nanometer composite layers, p-type is made in conductive reflective afterwards
Electrode.
Among one more specific embodiment, a kind of manufacture method of GaN base UV LED chip can include following
Step：
First, MOCVD techniques are utilized on substrate, growth includes cushion, n-layer, multiple quantum well layer, P type contact layer
In interior principal structural layer.
Then, will obtain epitaxial wafer by sequence of process steps such as photoetching, etching, deposition of metal, on LED chip
N-type electrode is formed, Graphene-Ag nanometer composite layers are made in p-type layer, deposited on Graphene-Ag nanometer composite layers conductive
The combining structure layer that reflecting layer Al or Al is formed with intermediate layer, makes p-type electrode in conductive reflective, and, by epitaxial wafer
Thinning, sliver is carried out, chip is formed.
Further, n, p-type electrode can be connected by salient point, solder, conducting resinl or metal wire with exposed electrical.
Compared with prior art, advantages of the present invention includes：
(1) by using upside-down mounting or vertical stratification, effectively reduce ultraviolet semiconductor luminescent device of the present invention thermal resistance and its
Junction temperature during work, improves device light efficiency and reliability；
(2) the larger shortcoming of transparency conducting layer surface resistance can effectively be overcome as conductive reflective using metal, makes electric current
It is more uniform when being spread to active area from electrode, improve the extension of electric current；
(3) by the Graphene-Ag nanometer composite layers in p-type layer, and conductive reflective is combined, is allowed to while having low
Ohmic contact resistance and in ultraviolet band reflectivity high；Simultaneously because of the presence of Graphene, between composite construction and reflecting layer
Counterdiffusion be suppressed, improve contact, reflecting properties and the reliability of device so that formed ultraviolet semiconductor light
Device has that external quantum efficiency is high, light extraction efficiency is high, cut-in voltage is low, thermal diffusivity is good, high reliability；
(4) preparation process is simple of ultraviolet semiconductor luminescent device of the present invention is controllable, and low cost is suitable to industrialized production.
Brief description of the drawings
Fig. 1 is a kind of structural representation of GaN base UV LED chip in the embodiment of the present invention 1；
Fig. 2 is a kind of structural representation of GaN base UV LED chip in the embodiment of the present invention 2；
Fig. 3 is a kind of structural representation of GaN base UV LED chip in the embodiment of the present invention 3；
Fig. 4 is a kind of structural representation of GaN base UV LED chip in the embodiment of the present invention 4.
Specific embodiment
Technical scheme is further described with some specific implementation cases below in conjunction with the accompanying drawings.
The reference picture 1 of embodiment 1, the structure of the GaN base UV LED chip is followed successively by from lower to upper：Sapphire Substrate 101,
Epitaxial layer includes AlN cushions 102, n-AlGaN layer 103, n-AlGaN Electron Extendeds layer 104, multiple quantum well layer 105, AlGaN
Electronic barrier layer 106, p-AlGaN layer 107, and (the wherein Ag nano-dot layers of graphene film covering Ag nano-dot layers 108
108a, graphene film layer 108b), conductive reflective 109, n-type electrode 110, p-type electrode 111.
The manufacturing step of the GaN base UV LED chip described further below, it includes：
Step S1：On a sapphire substrate, using MOCVD techniques, grown epitaxial layer successively, epitaxial layer includes thick about successively
2.0 μm of GaN cushions, thick about 2.0 μm n-AlGaN layer, the n-AlGaN Electron Extendeds layer of thickness about 200nm, thickness about 100nm
InGaN/AlGaN multiple quantum well layers, the AlGaN electronic barrier layers of thickness about 20nm, the p-AlGaN contact layers of thick about 0.1 μ m-thick；
Step S2：Have on the substrate (wafer) of epitaxial layer in growth, etched from p-AlGaN layers by photoetching and etching technics
To n-AlGaN layers, n-AlGaN table tops are formed；
Step S3：By photoetching, electron beam evaporation, stripping, annealing process, Ti is formed on n-AlGaN table tops (thick about
50nm)/Al (thickness about 300nm) Ohmic contact；
Step S4：On p-A1GaN layers deposited by electron beam evaporation method stringer Ag (Ag thickness 1nm~200nm, it is excellent
Select 30nm), in N210s~the 30min (preferably 1min) that annealed under the conditions of (preferably 400 DEG C) 300~500 DEG C in atmosphere forms Ag and receives
Meter Dian, its Average Particle Diameters are about 250nm；
Step S5：Graphene is prepared with CVD on Copper Foil, after the thick about 1.5 μm PMMA of spin coating, FeCl is then used3It is molten
Corrosion Copper Foil substrate, cleans up after after corrosion thoroughly, will corrode the PMMA/ graphene films for being formed with deionized water, then
PMMA/ graphene films are transferred on the epitaxial wafer surface after being processed through step S4；
Step S6：PMMA is removed with hot acetone solution, is then cleaned, then by photoetching and oxygen plasma etch reality
Graphical (bibliography " the Large-scale patterned multi-layer graphene of existing graphene film
films as transparent conducting electrodes for GaN light-emitting diodes."
Nanotechnology,2010,21(17))；
Step S7：Then the Al reflecting layer of the method deposition of thick about 500nm of deposited by electron beam evaporation, heavy in sample surfaces afterwards
Product SiO2Passivation layer；
Step S8：By lithography corrosion process, the opening contact hole in p-type and n-type region passivation layer, by photoetching, electronics
Beam evaporation, stripping technology form Ti (thickness about 50nm)/Au (thickness about 250nm) electrode on contact hole, afterwards by epitaxial wafer it is thinning,
Polishing, discrete LED chip is formed after cutting splitting.
Further, the electrode on LED chip can be realized being electrically connected with by salient point or solder with pad on flip-chip substrate.
The reference picture 2 of embodiment 2, the structure of the GaN base UV LED chip is followed successively by from lower to upper：Silicon carbide substrates 201,
Epitaxial layer includes AlN cushions 202, n-AlGaN layer 203, n-AlGaN Electron Extendeds layer 204, multiple quantum well layer 205, p-
AlGaN electronic barrier layers 206, p-GaN layer 207, the and (Graphene of coated graphite alkene quantum dot loaded Ag nanoparticle layers 208
Quantum dot loaded Ag Nanocomposites body layer 208a, intermediate layer 208b), conductive reflective 209, n-type electrode 210, p-type electrode
211。
The manufacturing step of the GaN base UV LED chip described further below, it includes：
Step S1：The heated backflow of graphene quantum dot and silver nitrate mixed solution that will be purified is obtained graphene quantum dot
Loaded Ag Nanocomposites body (bibliography " Synthesis of Silver Nanoparticles Supported on
Graphene Quantum Dots for Oxygen Reduction Reaction,"Journal of
Electrochemistry,vol.20,pp.353-359,2014)；
Step S2：On silicon carbide substrates, using MOCVD techniques, grown epitaxial layer successively, epitaxial layer includes thick about successively
2.0 μm of AlN cushions, thick about 2.0 μm n-AlGaN layer, the n-AlGaN Electron Extendeds layer of thickness about 200nm, thickness about 100nm
InGaN/AlGaN multiple quantum well layers, the AlGaN electronic barrier layers of thickness about 20nm, thick about 0.1 μm of p-GaN contact layers；
Step S3：N-AlGaN layers is etched to from p-GaN layer by photoetching and etching technics, n-AlGaN table tops are formed,
N-type electrode is prepared on n-AlGaN table tops；
Step S4：Graphene quantum dot loaded Ag Nanocomposites body obtained in step S1 is taken, p-GaN is uniformly spin-coated on
On layer, graphene quantum dot loaded Ag Nanocomposites body average grain diameter about 30nm；
Step S5：Then the method for deposited by electron beam evaporation is deposited in the middle of Cr (Cr thickness about 25~50nm, preferably from about 30nm)
Layer, thick about 1 μm Al reflecting layer prepare p-type electrode on Al reflecting layer；
Step S6：Plus metal level Ti (thickness about 50nm)/Au (thickness about 250nm), it is passivated, opening form electrode, electrode can
It is connected with exposed electrical with by salient point, solder, conducting resinl or metal wire.
The reference picture 1 of embodiment 3, the structure of the GaN base UV LED chip is followed successively by from lower to upper：Sapphire Substrate 301,
Epitaxial layer includes AlN cushions 302, n-AlGaN layer 303, n-AlGaN Electron Extendeds layer 304, multiple quantum well layer 305, AlGaN
Electronic barrier layer 306, p-AlGaN layer 307,308 (Ag nano wire layer 308a, Graphene of graphene film covering silver nano line layer
Film layer 308b), conductive reflective 309, n-type electrode 310, p-type electrode 311.
The manufacturing step of the GaN base UV LED chip described further below, it includes：
Step S1：On a sapphire substrate, using MOCVD techniques, grown epitaxial layer successively, epitaxial layer includes thick about successively
2.0 μm of AlN cushions, thick about 2.0 μm n-AlGaN layer, the n-AlGaN Electron Extendeds layer of thickness about 200nm, thickness about 100nm
InGaN/AlGaN multiple quantum well layers, the AlGaN electronic barrier layers of thickness about 20nm, thick about 0.1 μm of p-AlGaN contact layers；
Step S2：N-AlGaN layers is etched to from p-AlGaN layers by photoetching and etching technics, n-AlGaN table tops are formed,
N-type electrode is prepared on n-AlGaN table tops；
Step S3：The spin coating Ag nano wire films on p-AlGaN layers, Ag nano wire film diameters are about 20nm, length about
It is 10~30 μm；
Step S4：Graphene is prepared with CVD on Copper Foil, after spin coating PMMA, FeCl is then used3Solution corrosion corrodes copper
Paper tinsel substrate, after after corrosion thoroughly, forms PMMA/ graphene films and cleans up with deionized water by corrosion, then by PMMA/ graphite
Alkene film is transferred on the p-A1GaN layers containing Ag nano wires；
Step S5：PMMA is removed with hot acetone solution, is then cleaned, then by photoetching and oxygen plasma etch reality
Now graphene film is graphical
Step S6：The Al reflecting layer of about 1.5 μm of the method deposition of thick of deposited by electron beam evaporation, p is prepared on Al reflecting layer again
Type electrode；
Step S7：Plus metal level Ti (thickness about 50nm)/Au (thickness about 200nm), it is passivated, opening form electrode, electrode can
It is connected with exposed electrical with by salient point, solder, conducting resinl or metal wire.
The reference picture 4 of embodiment 4, the structure of the GaN base UV LED chip includes：N-GaN401, quantum well layer 402, p-
GaN layer 403, graphene film covering Ag nano-dot layers 404 (Ag nano-dot layer 404a, graphene film layer 404b), conduction are anti-
Penetrate layer 405, p-type electrode 406, metal bonding layer 407, metal substrate 408, n-type electrode 409.
The manufacturing step of the GaN base UV LED chip described further below, it includes：
Step S1：Thick about 2.0 μm GaN cushions, about 2.0 μ of thickness are grown successively with MOCVD techniques on a sapphire substrate
N-GaN layers of m, the InGaN/AlGaN multiple quantum well layers of thickness about 100nm, thick about 0.1 μm p-GaN layer；
Step S2：In p-GaN layer deposited by electron beam evaporation method stringer Ag (Ag thickness about 1nm~200nm, it is excellent
Choosing about 40nm), in N2The about 1min that annealed under the conditions of (preferably from about 400 DEG C) 300~500 DEG C in atmosphere forms Ag nano dots, averagely
Particle size is about 300nm；
Step S3：Graphene is prepared with CVD on Copper Foil, after spin coating PMMA, FeCl is then used3Solution corrosion Copper Foil is served as a contrast
Copper Foil substrate is corroded at bottom, after after corrosion thoroughly, corrosion is formed into PMMA/ graphene films with deionized water and is cleaned up, then will
PMMA/ graphene films are transferred in the p-GaN layer containing Ag nano dots；
Step S4：After removing PMMA with hot acetone solution, then cleaned, then by photoetching and oxygen plasma etch
Realize that graphene film is graphical, the Graphene between removal unit chip；
Step S5：Al reflecting layer of about 2.5 μm of the method deposition of thick of deposited by electron beam evaporation again；
Step S6：Al reflect layer surface further depositing Ti (thickness about 50nm)/Au (thickness about 200nm) metal level, photoetching,
Corrosion, forms the p-electrode of each chip, then evaporation metal Au/Sn, further photoetching, corrosion, forms the bonding of each chip
Layer；
Step S7：Deposition SiO2, and photoetching corrosion removal chip chamber region, etch InGaN/ in this, as protective layer
AlGaN material forms the isolation channel between chip, then erosion removal surface SiO to sapphire2；
Step S8：The bonding chip of large area is realized as contact surface and Cu/W alloy substrates with bonded layer；
Step S9：Using KrF PRKs stripping indigo plant is scanned one by one to each chip from Sapphire Substrate side
Jewel substrate；
Step S10：GaN cushions are removed using plasma etching, surface coarsening is carried out to n-GaN, by photoetching, electricity
Beamlet evaporation, stripping means prepare Ti (50nm)/Al (250nm) Ohm contact electrode in n-GaN layer surfaces, are had after scribing
There is the LED chip of metal supported vertical structure.
In previous embodiment 1-4, the resistance of conducting reflective aspect is respectively less than 0.1 Ω/sq, and Graphene-Ag nanometers
The catoptric arrangement that composite bed is constituted with conductive reflective reflects for 375nm light reflectivities averagely about 84% for 280nm light
Rate averagely about 80%.Find after tested in addition, the LED chip that embodiment 1-4 is formed also each has that external quantum efficiency is high, goes out
Light efficiency is high, cut-in voltage is low, thermal diffusivity is good, high reliability.
It should be appreciated that the invention is not limited in above-mentioned implementation method, if to various changes of the invention or deformation not
Depart from the spirit and scope of the present invention, if these change and deformation belong to claim of the invention and equivalent technologies scope it
Interior, then the present invention is also intended to comprising these changes and deforms.
Claims (10)
1. a kind of ultraviolet semiconductor luminescent device, including the epitaxial structure layer being mainly made up of n-layer, quantum well layer and p-type layer
And p-type, n-type electrode, it is characterised in that Graphene-Ag nanometer composite layers and conducting reflective are also sequentially provided with the p-type layer
Layer, the Graphene-Ag nanometer composite layers form Ohmic contact with p-type layer.
2. ultraviolet semiconductor luminescent device according to claim 1, it is characterised in that the Graphene-Ag nanometer composite layers
Including：
The Ag layer of nanomaterial in p-type layer is formed at, and, it is covered in the graphene film in the Ag layer of nanomaterial, institute
State Ag layer of nanomaterial and include Ag nano dots and/or Ag nano wires；
Or, graphene quantum dot loaded Ag Nanocomposites body layer.
3. ultraviolet semiconductor luminescent device according to claim 2, it is characterised in that the particle diameter of the Ag nano dots is
10nm~1 μm, a diameter of 5~100nm of the Ag nano wires, length are 5~100 μm, the graphene quantum dot loaded Ag
The particle diameter of Nanocomposites body is 5~100nm.
4. the ultraviolet semiconductor luminescent device according to Claims 2 or 3, it is characterised in that the Ag layer of nanomaterial and stone
Intermediate layer is also formed between black alkene film,
Or, it is sequentially formed with intermediate layer and conductive reflective on the Graphene-Ag nanometer composite layers.
5. ultraviolet semiconductor luminescent device according to claim 1, it is characterised in that the conductive reflective thickness is 0.1
~3 μm, and the material of the conductive reflective includes Al.
6. ultraviolet semiconductor luminescent device according to claim 4, it is characterised in that the material in the intermediate layer includes Cr.
7. ultraviolet semiconductor luminescent device according to claim 1, it is characterised in that the material of the p-type layer includes p-
AlGaN。
8. ultraviolet semiconductor luminescent device according to claim 1, it is characterised in that the light emitting semiconductor device is to fall
Assembling structure or vertical stratification.
9. the ultraviolet semiconductor luminescent device according to any one of claim 1-3,6-8, it is characterised in that described partly to lead
Body luminescent device is GaN base LED chip.
10. a kind of method of ultraviolet semiconductor luminescent device any one of manufacturing claims 1-9, it is characterised in that bag
Include：
In Grown epitaxial structure layer；
It is processed for epitaxial structure layer, and n-type electrode is formed in n-layer, Graphene-Ag is formed in p-type layer
Nanometer composite layer, and Graphene-Ag nanometer composite layers is formed Ohmic contact with p-type layer；
And, conductive reflective is formed on Graphene-Ag nanometer composite layers, p-type electrode is made in conductive reflective afterwards.
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| CN107195744B (en) * | 2016-03-15 | 2020-03-27 | 光宝光电(常州)有限公司 | Deep ultraviolet light emitting diode chip |
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