CN103824925A - 一种全透光式led封装结构及其封装工艺 - Google Patents

一种全透光式led封装结构及其封装工艺 Download PDF

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CN103824925A
CN103824925A CN201410061052.XA CN201410061052A CN103824925A CN 103824925 A CN103824925 A CN 103824925A CN 201410061052 A CN201410061052 A CN 201410061052A CN 103824925 A CN103824925 A CN 103824925A
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light
substrate
type led
led
full
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桑永树
李运鹤
刘会军
刘军
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Anhui Shilin Lighting Co Ltd
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Anhui Shilin Lighting Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

本发明公开了一种全透光式LED封装结构及其封装工艺；该全透光式LED封装结构，包括基板；所述基板上固定连接有正电极和负电极；所述正电极和负电极上分别设置有正接线柱和负接线柱；所述基板上贴布有多个LED；所述LED之间以及LED与正接线柱和负接线柱之间均通过金线连接；所述LED上设置有封装硅胶；本发明采用透明基板，使全角度出光称为可能，光效可比传统封装工艺提高一倍；且铜电极和LED与基板紧密结合，使铜电极和LED具有良好的散热通道，有效降低铜电极和LED的工作温度；同时由于采用了大尺寸基板，可在上面进行多芯片串并联，具有多种电压电流的工作参数，使其针对下游的应用产品具有更大的适应性。

Description

一种全透光式LED封装结构及其封装工艺
技术领域
本发明涉及一种全透光式LED封装结构及其封装工艺。
背景技术
随着社会经济的不断发展和人们节能意识的不断提高，近年来LED作为照明光源得到了巨大的发展，它的最大优点是节能和高光效；传统的LED封装是把LED放在支架和底座上，其结构决定它只能朝单向发光，造成了很大一部分光的损失；同时，由于LED的PN结发出的光子是非定向的，所以封装结构极大影响了期间的出光效率。
发明内容
本发明要解决的技术问题是提供一种节能、高效、导热性能好和能实现全透光的全透光式LED封装结构及其封装工艺。
为解决上述问题，本发明采用如下技术方案：
本发明的全透光式LED封装结构，包括基板；所述基板上固定连接有正电极和负电极；所述正电极和负电极上分别设置有正接线柱和负接线柱；所述基板上贴布有多个LED；所述LED之间以及LED与正接线柱和负接线柱之间均通过金线连接；所述LED上设置有封装硅胶。
进一步地，所述基板为透明陶瓷基板。
进一步地，所述正电极和负电极为带状铜电极。
进一步地，所述LED为高亮型LED。
进一步地，所述封装硅胶由荧光粉和硅胶混合而成。
一种全透光式LED封装工艺，包括以下步骤：
步骤1）、将正电极和负电极利用微波键合的方式与基板压合；
步骤2）、在基板上贴布LED；
步骤3）、按具体产品的要求，用金线对LED进行串并联方式连接，并通过金线分别引出到正电极和负电极上的正接线柱和负接线柱；
步骤4）、按所需色温，将封装硅胶涂布在LED上，并烘干。
本发明与现有技术相比较，其具有以下有益效果：本发明的一种节能、高效、导热性能好和能实现全透光的全透光式LED封装结构及其封装工艺；本发明采用透明基板，使全角度出光称为可能，光效可比传统封装工艺提高一倍；且铜电极和LED与基板紧密结合，使铜电极和LED具有良好的散热通道，有效降低铜电极和LED的工作温度；同时由于采用了大尺寸基板，可在上面进行多芯片串并联，具有多种电压电流的工作参数，使其针对下游的应用产品具有更大的适应性。
附图说明
图1为本发明的主视结构示意图；
图2为本发明的左视结构示意图；
图3为本发明的右视结构示意图。
1-基板；2-正电极；3-负电极；4-LED；5-正接线柱；6-负接线柱；7-金线；8-封装硅胶。
具体实施方式
如图1、图2和图3所示的一种全透光式LED封装结构，包括基板1；所述基板1上固定连接有正电极2和负电极3；所述正电极2和负电极3上分别设置有正接线柱5和负接线柱6；所述基板1上贴布有多个LED4；所述LED4之间以及LED4与正接线柱5和负接线柱6之间均通过金线7连接；所述LED4上设置有封装硅胶8。
其中，所述基板1为透明陶瓷基板；所述正电极5和负电极6为带状铜电极；所述LED4为高亮型LED；所述封装硅胶8由荧光粉和硅胶混合而成。
一种全透光式LED封装工艺，包括以下步骤：
步骤1）、将正电极和负电极利用微波键合的方式与基板压合；
步骤2）、在基板上贴布LED；
步骤3）、按具体产品的要求，用金线对LED进行串并联方式连接，并通过金线分别引出到正电极和负电极上的正接线柱和负接线柱；
步骤4）、按所需色温，将封装硅胶涂布在LED上，并烘干。
本发明的一种节能、高效、导热性能好和能实现全透光的全透光式LED封装结构及其封装工艺；本发明采用透明基板，使全角度出光称为可能，光效可比传统封装工艺提高一倍；且铜电极和LED与基板紧密结合，使铜电极和LED具有良好的散热通道，有效降低铜电极和LED的工作温度；同时由于采用了大尺寸基板，可在上面进行多芯片串并联，具有多种电压电流的工作参数，使其针对下游的应用产品具有更大的适应性。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何不经过创造性劳动想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求书所限定的保护范围为准。

Claims (6)

1.一种全透光式LED封装结构，其特征在于：包括基板；所述基板上固定连接有正电极和负电极；所述正电极和负电极上分别设置有正接线柱和负接线柱；所述基板上贴布有多个LED；所述LED之间以及LED与正接线柱和负接线柱之间均通过金线连接；所述LED上设置有封装硅胶。
2.根据权利要求1所述的全透光式LED封装结构，其特征在于：所述基板为透明陶瓷基板。
3.根据权利要求1所述的全透光式LED封装结构，其特征在于：所述正电极和负电极为带状铜电极。
4.根据权利要求1所述的全透光式LED封装结构，其特征在于：所述LED为高亮型LED。
5.根据权利要求1所述的全透光式LED封装结构，其特征在于：所述封装硅胶由荧光粉和硅胶混合而成。
6.一种全透光式LED封装工艺，其特征在于，包括以下步骤：
步骤1）、将正电极和负电极利用微波键合的方式与基板压合；
步骤2）、在基板上贴布LED；
步骤3）、按具体产品的要求，用金线对LED进行串并联方式连接，并通过金线分别引出到正电极和负电极上的正接线柱和负接线柱；
步骤4）、按所需色温，将封装硅胶涂布在LED上，并烘干。
CN201410061052.XA 2014-02-21 2014-02-21 一种全透光式led封装结构及其封装工艺 Pending CN103824925A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102109115A (zh) * 2010-12-29 2011-06-29 葛世潮 一种P-N结4π出光的高压LED及LED灯泡
CN103199088A (zh) * 2013-04-07 2013-07-10 吴巨芳 一种自散热led光源及制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102109115A (zh) * 2010-12-29 2011-06-29 葛世潮 一种P-N结4π出光的高压LED及LED灯泡
CN103199088A (zh) * 2013-04-07 2013-07-10 吴巨芳 一种自散热led光源及制造方法

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Application publication date: 20140528