CN103794452A - Method for controlling ion implantation uniform distribution - Google Patents
Method for controlling ion implantation uniform distribution Download PDFInfo
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- CN103794452A CN103794452A CN201210442577.9A CN201210442577A CN103794452A CN 103794452 A CN103794452 A CN 103794452A CN 201210442577 A CN201210442577 A CN 201210442577A CN 103794452 A CN103794452 A CN 103794452A
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Abstract
The invention discloses a method for accurately controlling ion implantation distribution uniformity, relates to an ion implanter, and belongs to the field of semiconductor manufacturing. The method comprises high-precision multi-channel I/V acquisition and conversion, detection and correction of beam distribution density in the horizontal direction, beam parallelism detection and a vertical scanning control algorithm. The system mainly comprises a multi-coil adjusting magnet, a multi-stage adjusting magnetic pole, a movable Faraday cup, a sampling Faraday cup, a linear motor and a PMAC motion control system. The invention can automatically realize the accurate detection of the dosage of the ion implantation ions and automatically realize the uniformity of the distribution of the implantation ions and the accurate control of the dosage.
Description
Technical field
The present invention relates to ion implantor uniformity control method, relate to ion implantor, belong to semiconductor equipment manufacture field.
Background technology
Ion implantor uniformity control technology is one of key technology of ion implantor, and its operation principle is with device, ion equably, to be accurately injected into whole wafer surface by the dosage of setting based on various control and method of measurement.But actual conditions, cannot obtain the broadband bundle of high uniformity like this from ion source, and be subject to space charge effect effect from the line of analyzing process, regulon, the many factors such as space interference, finally after magnetic field for correcting and deceleration, arrive the broadband bundle of target, can not meet uniformity and the depth of parallelism of technological requirement, therefore must design suitable uniformity and depth of parallelism aligning gear, with basis in real work final beam homogeneity and depth of parallelism parameter in the position finding of target sheet, closed-loop optimization regulates broadband bundle relevant parameter, the final uniformity and the depth of parallelism index that meet technological requirement of obtaining.
The invention provides the ion implantor uniformity control method that a kind of mechanical scanning combines with electric scanning, this control method architecture is simple, measures with control accurate, reliable.
Summary of the invention
The present invention relates to a kind of equally distributed method of Implantation of controlling.
A kind of for accurately controlling the system of ion implantation distribution uniformity: the detection that comprises high-precision multi-path I/V Collect conversion, horizontal direction bundle distribution density with correction, restraint Parallel testing, vertical scanning control algolithm.
The present invention is achieved through the following technical solutions:
1. one kind comprises for the system of accurately controlling ion implantation distribution uniformity: multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
2. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: be arranged on the multi-coil regulating magnet of wide beam parallel lens entrance and be arranged on the multistage adjusting magnetic pole cooperation that wide beam parallel lens exports, regulate uniformity and the depth of parallelism of broadband bundle.Wherein multi-coil regulating magnet, by regulating the current status of every group of coil, changes line by the Distribution of Magnetic Field in region, and then changes line by the angular distribution after control band; Multistage adjusting magnetic pole regulates the upright position of each electrode by each motor, change the pole span between symmetrical magnetic pole, regulates local magnetic field intensity, the depth of parallelism parameter that final change is restrainted with adjusting broadband through the deflection angle of the ion beam in this region.3. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup.Wherein sample Faraday cup for gathering line value, coordinate multi-coil regulating magnet and multistage adjusting magnetic pole to complete the depth of parallelism and uniformity detection; Mobile Faraday cup is for gathering line value the go forward side by side depth of parallelism and the horizontal direction homogeneity correction of line width band bundle.
4. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: linear electric motors are motion parts execution units.Control after line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.
5. a kind of system for accurate control ion implantation distribution uniformity as claimed in claim 1, is characterized in that: PMAC motion controller carries out line Collect conversion and completes core algorithm processing, controls actuator and completes homogeneity correction.
The present invention has following remarkable advantage:
1. simple in structure: only to be formed by parts such as multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control systems.
2. reliable in function: formed common uniformity and the depth of parallelism regulating to guarantee broadband bundle by multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup and sampling Faraday cup.
3. be easy to control: sampling Faraday cup is used for gathering line value, and by regulating multi-coil regulating magnet and multistage adjusting magnetic pole to change line by the Distribution of Magnetic Field in region, regulate local magnetic field intensity, the depth of parallelism parameter that final change is restrainted with adjusting broadband through the deflection angle of the ion beam in this region.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be described further, but not as the restriction to patent of the present invention.
Fig. 1 is ion implantation distribution uniformity system architecture figure.
Fig. 2 injects flow chart
In Fig. 1, ion implantation dosage control system comprises multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
Embodiment
Below in conjunction with accompanying drawing 1 and accompanying drawing 2, the present invention is further introduced, but not as a limitation of the invention.
As shown in Figure 1, a kind of system of accurate control ion implantation distribution uniformity: relate to the detection of high-precision multi-path I/V Collect conversion, horizontal direction bundle distribution density and correction, bundle Parallel testing, vertical scanning control algolithm; System is mainly made up of multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
The broadband Shu Jing drawing is arranged on the multi-coil regulating magnet of wide beam parallel lens entrance and is arranged on the cooperation adjusting of the multistage adjusting magnetic pole of wide beam parallel lens outlet, in order to guarantee uniformity and the depth of parallelism of broadband bundle.Wherein multi-coil regulating magnet, by regulating the current status of every group of coil, changes line by the Distribution of Magnetic Field in region, and then changes line by the angular distribution after control band; Multistage adjusting magnetic pole regulates the upright position of each electrode by each motor, change the pole span between symmetrical magnetic pole, regulates local magnetic field intensity, the depth of parallelism parameter that final change is restrainted with adjusting broadband through the deflection angle of the ion beam in this region.Mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup, and the Faraday cup of wherein sampling is for gathering line value, and this value is for detection of the uniformity of broadband bundle; Mobile Faraday cup is for gathering line value the go forward side by side depth of parallelism and the horizontal direction homogeneity correction of line width band bundle.In the time that broadband bundle does not meet desired value, can regulate one by one the current status of every group of coil of multi-coil regulating magnet and the each motor of multistage adjusting magnetic pole to regulate the upright position of each electrode, regulate local magnetic field intensity, cooperation multi-coil regulating magnet and multistage adjusting magnetic pole complete the depth of parallelism parameter that the depth of parallelism and uniformity detection final change are restrainted with adjusting broadband through the deflection angle of the ion beam in this region.Uniformity regulates formerly, after the depth of parallelism is adjusted in.
Control after line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.PMAC motion controller carries out line Collect conversion and completes core algorithm processing, controls actuator and completes homogeneity correction.
Injection flow chart as shown in Figure 2, restraint in the broadband that meets the depth of parallelism and uniformity requirement after calibration, calculates single sweep operation dosage, draws expectation scanning times in conjunction with menu dosage; Calculate next line journey sweep speed by one-stroke actual scanning dosemeter; Inject while end, by residue dosage and the magnitude relationship that setting limit velocity regulates, determine final compensation relationship.
The specific embodiment of patent of the present invention elaborates the content of patent of the present invention.For persons skilled in the art, any apparent change of under the prerequisite that does not deviate from patent spirit of the present invention, it being done, all forms the infringement to patent of the present invention, will bear corresponding legal liabilities.
Claims (5)
1. one kind comprises for the system of accurately controlling ion implantation distribution uniformity: multi-coil regulating magnet, multistage adjusting magnetic pole, mobile Faraday cup, sampling Faraday cup, linear electric motors and PMAC kinetic control system.
2. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: be arranged on the multi-coil regulating magnet of wide beam parallel lens entrance and be arranged on the multistage adjusting magnetic pole cooperation that wide beam parallel lens exports, regulate uniformity and the depth of parallelism of broadband bundle.Wherein multi-coil regulating magnet, by regulating the current status of every group of coil, changes line by the Distribution of Magnetic Field in region, and then changes line by the angular distribution after control band; Multistage adjusting magnetic pole regulates the upright position of each electrode by each motor, change the pole span between symmetrical magnetic pole, regulates local magnetic field intensity, the depth of parallelism parameter that final change is restrainted with adjusting broadband through the deflection angle of the ion beam in this region.
3. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: mobile Faraday cup is connected with PMAC kinetic control system by coaxial cable with sampling Faraday cup.Wherein sample Faraday cup for gathering line value, coordinate multi-coil regulating magnet and multistage adjusting magnetic pole to complete the depth of parallelism and uniformity detection; Mobile Faraday cup is for gathering line value the go forward side by side depth of parallelism and the horizontal direction homogeneity correction of line width band bundle.
4. as claimed in claim 1 a kind of for accurately controlling the system of ion implantation distribution uniformity, it is characterized in that: linear electric motors are motion parts execution units.Control after line collection calculating, control break linear electric motors are motion vertical sweep speed up and down, to reach the uniformity of vertical direction.
5. a kind of system for accurate control ion implantation distribution uniformity as claimed in claim 1, is characterized in that: PMAC motion controller carries out line Collect conversion and completes core algorithm processing, controls actuator and completes homogeneity correction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210442577.9A CN103794452B (en) | 2012-11-08 | 2012-11-08 | System for accurately controlling ion implantation distribution uniformity |
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| CN201210442577.9A CN103794452B (en) | 2012-11-08 | 2012-11-08 | System for accurately controlling ion implantation distribution uniformity |
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| CN103794452B CN103794452B (en) | 2016-03-02 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097400A (en) * | 2015-08-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Ion injection system and method |
| CN110718434A (en) * | 2018-07-11 | 2020-01-21 | 北京中科信电子装备有限公司 | Multi-coil current control uniformity adjusting method |
| CN111769026A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
| CN111769039A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Method for adjusting uniformity of low-energy large-beam ion implanter |
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| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| JP2006140053A (en) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | Ion implantation apparatus |
| CN2906907Y (en) * | 2005-12-05 | 2007-05-30 | 北京中科信电子装备有限公司 | Non-uniform magnetic field edge characteristic corrector for ion implantation machine |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
| CN102543642A (en) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | Two-dimensional scanning synchronization method for controlling uniform injection of ions |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| JP2006140053A (en) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | Ion implantation apparatus |
| CN2906907Y (en) * | 2005-12-05 | 2007-05-30 | 北京中科信电子装备有限公司 | Non-uniform magnetic field edge characteristic corrector for ion implantation machine |
| CN101764029A (en) * | 2008-12-04 | 2010-06-30 | 北京中科信电子装备有限公司 | Method and device for accurately detecting and correcting parallelism of ion beam |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097400A (en) * | 2015-08-03 | 2015-11-25 | 京东方科技集团股份有限公司 | Ion injection system and method |
| CN105097400B (en) * | 2015-08-03 | 2017-10-17 | 京东方科技集团股份有限公司 | Ion implant systems and method |
| CN110718434A (en) * | 2018-07-11 | 2020-01-21 | 北京中科信电子装备有限公司 | Multi-coil current control uniformity adjusting method |
| CN111769026A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
| CN111769039A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Method for adjusting uniformity of low-energy large-beam ion implanter |
| CN111769039B (en) * | 2019-04-02 | 2023-07-04 | 北京中科信电子装备有限公司 | Method for adjusting uniformity of low-energy large-beam ion implanter |
| CN111769026B (en) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | Beam property measuring device and method |
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| CN103794452B (en) | 2016-03-02 |
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Effective date of registration: 20220505 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: No.6, Xingguang 2nd Street, optical Mechatronics industrial base, Tongzhou District, Beijing Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |