CN106324654B - The measurement method of ion implanting - Google Patents
The measurement method of ion implanting Download PDFInfo
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- CN106324654B CN106324654B CN201510345847.8A CN201510345847A CN106324654B CN 106324654 B CN106324654 B CN 106324654B CN 201510345847 A CN201510345847 A CN 201510345847A CN 106324654 B CN106324654 B CN 106324654B
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Abstract
The present invention provides a kind of measurement method of ion implanting, comprising: provides ion implant systems, the ion beam output end of ion implant systems is provided at least one set of stacking Faraday cup；The first two-dimensional ion beam distribution measuring is carried out in the first plane perpendicular to ion beam incident direction using Faraday cup is stacked, to obtain the first center of mass point of the ion beam distribution in the first plane；The subpoint of the first center of mass point of ion beam distribution is determined in the second plane perpendicular to ion beam incident direction, wherein the second plane and the first plane have the first distance along ion beam incident direction；The second two-dimensional ion beam distribution measuring is carried out in the second plane using Faraday cup is stacked, to obtain the second center of mass point of the ion beam distribution in the second plane；The incident angle of the ion beam is calculated according to the position and first distance of the subpoint of the first center of mass point and the second center of mass point.The measurement method of ion implanting provided by the invention can provide the ion beam incident angle in horizontal and vertical direction while the incident angle to ion beam measures, and be conducive to simplify measurement process, and more accurate measure ion implanting characteristic.
Description
Technical field
The present invention relates to semiconductor manufacturing equipment technical fields, in particular to a kind of measurement method of ion implanting.
Background technique
Early in the 1960s, ion implantation technique is just applied in the production of semiconductor devices.Ion implantation technique
Exactly the atom of certain element is ionized, and accelerates it in the electric field, injects solid material after obtaining higher speed
Surface, to change the physics of material surface or a kind of technology of chemical property.With the progress of semi-conductor industry, semiconductor
The characteristic size and depth of device constantly reduce, and the threshold voltage of device can be presented obviously with the angulation change of ion implanting
Variation.Therefore, in order to guarantee the stability of performance of semiconductor device, strict control ion is wanted to infuse when carrying out ion implanting to it
The angle entered.
In prior art, when controlling ion implantation angle, it usually needs carry out by system along X-axis or along Y
The measurement of axis respectively measures horizontal and vertical implant angle.However, ion implanting actually includes X-direction, Y
Direction, the displacement of Z-direction and respectively along the angle of X, Y, Z axis incidence.In addition, in the prior art, when needs are to except X-axis side
To when the measurement and calculating for carrying out incident angle with the direction other than Y direction, need to carry out by other devices.In consideration of it,
It is necessary to design a kind of measurement method of new ion implanting, to simplify measurement process, and more accurate ion note is measured
Enter characteristic.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of measurement methods of ion implanting, comprising: step 1: providing
Ion implant systems are provided at least one set of stacking Faraday cup in the ion beam output end of the ion implant systems；Step
2: carrying out the first two-dimensional in the first plane perpendicular to the ion beam incident direction using the stacking Faraday cup
Beam distribution measuring, to obtain the first center of mass point of the ion beam distribution in first plane；Step 3: perpendicular to it is described from
Second plane of beamlet incident direction determines the subpoint of first center of mass point of the ion beam distribution, wherein described second
Plane and first plane have the first distance along ion beam incident direction；Step 4: being existed using the stacking Faraday cup
The second two-dimensional ion beam distribution measuring is carried out in second plane, to obtain of the ion beam distribution in second plane
Two center of mass point；Step 5: according to the position and the first distance of the subpoint of first center of mass point and second center of mass point
Calculate the incident angle of the ion beam.
Wherein, incident direction of the opening for stacking Faraday cup towards the ion beam.
Wherein, further include establishing using the ion beam incident direction as the three-dimensional cartesian coordinate system of Z-direction, make described
The subpoint of one center of mass point and second center of mass point are located at the X-Y coordinate face of the three-dimensional cartesian coordinate system.
Wherein, the Faraday cup that stacks along one group of Faraday cup of Y-axis or X-axis arrangement by constituting.
Wherein, the Faraday cup is connected with current measuring device.
Wherein, the first two-dimensional ion beam measurement and the second two-dimensional ion beam measurement include the stacking farad
Cup edge X-axis or Y-axis translate second distance.
Wherein, the ion implant systems further include target, to the receptor as ion implanting, the second distance
Length be greater than the target diameter.
Wherein, the electric current measured at first center of mass point and second center of mass point is maximum.
Wherein, the ion beam is in the incident angle of X-direction according to the subpoint of first center of mass point and described the
The X axis coordinate component difference and first distance of two center of mass point calculate.
Wherein, the ion beam is in the incident angle of Y direction according to the subpoint of first center of mass point and described the
The Y axis coordinate component difference and first distance of two center of mass point calculate.
Compared with prior art, the measurement method of ion implanting provided by the invention can not increase any software, hard
The incident angle of ion beam is measured in the case where the other equipment of part form, device and operation mechanism, additionally it is possible to simultaneously
The ion beam incident angle for providing horizontal and vertical direction is conducive to simplify measurement process, and more accurate measures ion note
Enter characteristic.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the basic structure schematic diagram of ion implant systems；
Fig. 2 shows the schematic diagrames of setting change in coordinate axis direction according to an embodiment of the invention；
Fig. 3 shows the schematic diagram of two-dimensional measurement that is according to an embodiment of the invention, carrying out ion beam；
Fig. 4 shows the schematic diagram of three-dimensional measurement that is according to an embodiment of the invention, carrying out ion beam；
Fig. 5 A-5B shows the schematic diagram of three-dimensional measurement that is according to an embodiment of the invention, carrying out ion beam；With
And
Fig. 6 shows the method flow diagram of three-dimensional measurement that is according to an embodiment of the invention, carrying out ion beam.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiments.
Environment temperature required for ion implantation technique is lower, and the uniformity of doping is good, pollution is small, can accurately control
The distribution of impurity processed, and various elements can be injected without the limitation of solid solubility, therefore have become extensive
Indispensable doping process in IC manufacturing.Low energy, low dosage and the quick scanning of ion implantation apparatus will form low
Doping concentration and shallow junction are deep, and the high energy of ion implantation apparatus, large dosage and slow scanning will form high-dopant concentration and deep junction depth,
This will cause the different characteristics of doping wafer.Therefore, in the prior art, in order to realize to the dosage of ion implanting and angle into
Row control, needs closed-loop control system to measure the angle of ion implanting in real time.Simultaneously because ion when ion implanting
Beam can be scanned to realize for the ion beam current with certain length and width the angle of ion implanting is carried out it is accurate in real time
Measurement needs to ion beam length and width both direction while to measure simultaneously.In this process, the charge of ion can
It is calculated with being collected by Faraday cup (Faraday Cup).Faraday cup keeps certain potentials poor with other component
To capture ion, when ion enters in cup by one or more suppressor grids, electric current will be generated, it is converted at voltage after
It amplifies and records.
As shown in Figure 1, showing the basic structure schematic diagram of the ion implant systems according to the present embodiment.Ion implanting system
System is mainly by ion source 101, mass analyzer 102, accelerator 103, focusing device 104, neutral line trap and off beam plate
105, Y-direction scanning means 106, line trap and off beam plate 107, X are formed to scanning means 108, target 109.Wherein, ion
Source 101 is used for ionized impurities.Common impurity source gas is mainly BF3、BCl3、AsH3And PH3Etc..In mass analyzer 102
In, since different ions have different charge-to-mass ratios, thus the angle deflected in analyzer magnetic field is different, thus can divide
Required foreign ion is separated out, and more pure using the ion beam that quality analysis obtains.Then, accelerator 103 forms height
Electrostatic field is pressed to become high energy ion beam for accelerating to ion beam, accelerator is to the acceleration energy of ion herein
Determine the Important Parameters of ion implanting depth, the electricity of electric field is preferably 5-500KeV.Focusing device 104 can will be after acceleration
The ion beam that ion focusing is several millimeters at diameter.When ion beam passes through neutral beam deviator 105, using offset electrodes and partially
Neutral atom therein can be separated by moving angle.And Y-direction scanning means 106 and X will be in certain areas to scanning means 108
Ion beam is scanned, final ion beam bombardment target 109 (semiconductor material).When ion enters target 109, by
Stop to target target atom, to stop wherein, enters displacement by rear impurity of annealing, ionization becomes with electroactive miscellaneous
Matter.Target 109 is usually to need to implement the wafer of ion implanting, wafer can by adulterate monocrystalline silicon, doped with impurity
Silicon (SSOI) is laminated on insulator, SiGe (S-SiGeOI), insulation is laminated on insulator for monocrystalline silicon, silicon-on-insulator (SOI)
SiGe (SiGeOI) and germanium on insulator (GeOI) etc. are made on body.Before forming ion implanting, wafer may pass through
Many processing steps, such as photoetching, etching, doping.The quality of the ion implantation technology of completion may depend greatly on
Inject the uniformity of the ion in wafer.For example, the non-uniform Distribution of the ion in wafer may result in the crystal in wafer
The poor driving current consistency (IDU) or poor threshold voltage uniformity (VTU) of pipe.
In addition, further including Faraday cup 110 in the ion implant systems structure according to the present embodiment.Faraday cup 110
For vacuum detector made of metal, metal is designed to cup-shaped, for measuring charged particle incident intensity, the electric current measured
It can be used to determine the quantity of incident electron or ion.Preferably, Faraday cup 110 is arranged in target 109 and scanning means
Between 108.Faraday cup 110 includes open end and bottom (not shown), and the open end is towards the ion beam incidence side
To.As an example, the Faraday cup is placed in the ion beam path near target 109, and the open end of Faraday cup 110
Towards the direction of ion implanting, when ion beam incidence, the ion in the ion beam will enter opening for Faraday cup 110
Mouthful, at this point, the current measuring device (not shown) being connected with each 110 bottom of Faraday cup can measure each Faraday cup
110 current values generated.According to the reading of each current measuring device, it can be deduced that ion beam current at the Faraday cup
Measured value.Typically, current measuring device can be ammeter, current transformer, current sensor etc..
As shown in Fig. 2, according to the present embodiment, when being measured using Faraday cup to ion beam 211, for convenient for retouching
It states, in the surface set three-dimensional cartesian coordinate system of target 209.209 surface of target constitutes X-Y axial coordinate plane, and Z axis
Direction is set as the direction of incident ion beam 211.In general, being substantially carried out ion note in the ion implanting measurement of the prior art
The measurement of one-dimensional (1D) or two-dimentional (2D) that enters.
One-dimensional measurement obtains what ion beam current was distributed along X-axis along the change in location of X-axis by single Faraday cup
Curve, as an example, the value of measured ion beam current is zero when Faraday cup does not enter the central area of ion beam；
Central area with Faraday cup along X-axis gradually to incident ion beam is close, and the ion that Faraday cup is captured increases, and is surveyed
The electric current obtained increases rapidly；When Faraday cup by ion beam fringe region completely into ion beam central area after, due to
The ion beam quantity of the central area of ion beam is relatively stable, and incident densities are more uniform, therefore will be presented on certain on curve
The steady state value of micro floating around current value；As Faraday cup continues to move along the x-axis, when Faraday cup leaves in ion beam
When heart district domain enters fringe region, since the ion concentration in ion beam declines rapidly, the amount of ions captured in Faraday cup
Also it reduces rapidly, measured current value reduces；Until Faraday cup is fully removed ion beam range, measured electricity along X-axis
Flow valuve is zero.Therefore, moving along the x-axis measured value of ion beam current curve using single Faraday cup is mesa-shaped curve.
Two-dimensional measurement then needs to carry out by one group of stacking Faraday cup (Stacked Faraday Cup).Work as ion beam
When incident, the stacking Faraday cup (SFC) is moved in groups, to obtain the distribution character image of ion beam.
As an example, as shown in figure 3, stacking Faraday cup is one group by arranging along Y-axis when carrying out two-dimensional ion beam measurement
The array of Faraday cup 310A, 310B, 310C ... 310N composition of column.In measurement process, the stacking faraday cup edge X-axis
Translation distance x, when ion beam starts incidence, the ion in ion beam will enter Faraday cup 310A, 310B, 310C ...
The opening of 310N, at this point, being connected in the bottom for stacking each Faraday cup 310A, 310B, 310C ... 310N in Faraday cup
The current measuring device (not shown) connect can measure the current value of the generation of each Faraday cup 310A, 310B, 310C ... 310N.
According to the reading of each current measuring device, it can be deduced that the measured value of the ion beam current at the Faraday cup, thus not only
The value that ion beam current is distributed along X-axis can be obtained, the value that ion beam current is distributed along Y-axis can also be obtained to get to ion
Distribution density situation of the beam on X-Y axial plane.Typically, current measuring device can be ammeter, current transformer, electric current
Sensor etc..Further, it should be noted that the length of distance x should be greater than the diameter of the target of such as wafer, such ability
Effectively measuring ion beam distribution density.
As shown in figure 4, on the basis of existing technology, the present invention provides one kind to carry out ion in three-dimensional (3D) dimension
Inject the method for measurement.Three-dimensional measurement of the present invention does not need to increase new ion implanting measurement mechanism, but based on
Two-dimensional injection measures identical one group of stacking Faraday cup (Stacked Faraday Cup) and carries out.
As an example, on X-Y axial plane as shown in Figure 4, the three-dimensional measurement when being measured to ion beam distribution,
Stacking Faraday cup is one group of array being made of Faraday cup 410A, 410B, 410C ... the 410N arranged along Y-axis.It is measuring
In the process, the stacking faraday cup edge X-axis translation distance x, when ion beam starts incidence, ion in ion beam will be into
Enter the opening of Faraday cup 410A, 410B, 410C ... 410N, at this point, stack Faraday cup in each Faraday cup 410A,
The current measuring device (not shown) that the bottom of 410B, 410C ... 410N are connected can measure each Faraday cup 410A, 410B,
The current value of the generation of 410C ... 410N.According to the reading of each current measuring device, it can be deduced that at the Faraday cup from
The measured value of electron-beam current can also obtain ion beam current to can not only obtain the value that ion beam current is distributed along X-axis
Value along Y-axis distribution is to get the distribution density situation to ion beam on X-Y axial plane.Typically, current measuring device can be with
It is ammeter, current transformer, current sensor etc..Further, it should be noted that the length of distance x should be greater than such as crystalline substance
The diameter of round target, in this way could effectively measuring ion beam distribution density.
As an example, the present invention further includes in Z axis as shown in Figure 4 while measuring to ion beam distribution
The measurement carried out in (perpendicular to target surface direction).Firstly, each Faraday cup 410A, 410B, 410C ... 410N composition
Stacking Faraday cup the two-dimensional measurement of ion beam is carried out at plane S.It should be noted that flat by the X-Y at plane S
Face carries out ion beam measurement, can obtain the point of injection maximum intensity of the ion beam at plane S.Preferably, connect at this point
The maximum of current value measured by the current measuring device of Faraday cup is connect, the present invention is using the point as " mass center " of ion beam mutation
Point.Then, the stacking Faraday cup being made of each Faraday cup 410A, 410B, 410C ... 410N is by along Z axis negative value direction
Translation distance d, wherein translation distance d is preferably normal to target surface, i.e., along the translation distance of Z-direction.When by each
The stacking Faraday cup of Faraday cup 410A, 410B, 410C ... 410N composition is translated into the plane that the distance of anomaly face S is d
When at S ', the two-dimensional measurement of ion beam is carried out again.It should be noted that passing through the X-Y bis- for carrying out ion beam at plane S '
Dimension measurement can equally obtain the point of injection maximum intensity of the ion beam at plane S '.
As shown in Figure 5A, 512C is the point of injection maximum intensity of the ion beam at plane S, it is preferred that is connected at this point
The maximum of current value measured by the current measuring device of Faraday cup is connect, it is considered herein that point 512C is ion beam in plane S
Place carries out obtained " mass center " point of two-dimensional measurement.It is reached after the translation distance d of Z axis negative value direction stacking Faraday cup
S ' plane, if 512A is projection of " mass center " point 512C along the normal perpendicular to S ' plane in S ' plane.And due to incidence from
The atomic nucleus and electronics of son and target constantly collide, and direction changes, and energy is reduced, by the fortune of one section of zigzag path
After dynamic, it can be stopped in target because kinetic energy exhausts.512B is obtained by two-dimensional measurement at plane S '
" mass center " point, it is preferred that current value measured by Faraday cup is maximum at the 512B.
As shown in Figure 5 B, 512A is that two-dimensional ion beam measurement resulting " mass center " point that carries out at plane S in Fig. 5 A exists
Subpoint at plane S '.512B is to pass through obtained " mass center " point of two-dimensional measurement at plane S '.512A and 512B are same
On one plane S ', on plane S ' respectively (x1, y1) and (x2, y2) with the coordinate of X-Y coordinate setting 512A and 512B.Pass through
The setting of such three-dimensional cartesian coordinate system, can according to the determination of 512A to 512B after plane S to plane S ' moving distance d,
The incident angle of ion beam is respectively as follows: Y direction θv=arctan (Δ y/d), X-direction θh=arctan (Δ x/d).
Such as Fig. 6, the method flow of three-dimensional measurement that is according to an embodiment of the invention, carrying out ion beam is shown
Figure.Wherein, S601 provides ion implant systems, and the ion beam output end of the ion implant systems is provided at least one set of heap
Folded Faraday cup；S602 is carried out in the first plane perpendicular to the ion beam incident direction using the stacking Faraday cup
First two-dimensional ion beam distribution measuring, to obtain the first center of mass point of the ion beam distribution in first plane；S603 is hanging down
The subpoint of first center of mass point of the ion beam distribution is directly determined in the second plane of the ion beam incident direction,
Described in the second plane and first plane there is the first distance along ion beam incident direction；S604 uses the stacking
The glass is drawn to carry out the second two-dimensional ion beam distribution measuring in second plane, to obtain the ion beam in second plane
Second center of mass point of distribution；S605 is according to the subpoint of first center of mass point and the position of second center of mass point and described the
One distance calculates the incident angle of the ion beam.
It should be noted that ion beam measuring method as described herein is used not only for the ion of ion beam implantation systems
The measurement of beam output end, the ion beam that can also be applied to ion beam implantation systems any position measure.Similarly, of the present invention
Ion beam measuring method be also capable of applied solar energy field, optoelectronic areas or the field FPD other purposes ion implanting
In machine.
The present invention can not only be in the feelings of the other equipment, device and operation mechanism that do not increase any software, example, in hardware
The incident angle of ion beam is measured under condition, additionally it is possible to while the ion beam incident angle in horizontal and vertical direction is provided,
Be conducive to variation of the real-time monitoring ion beam mutation on three-dimensional.Those of ordinary skill in the art can be in religion of the invention
It leads and lower suitable selection is made according to the original design domain of differing complexity.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of measurement method of ion implanting, comprising:
Step 1: ion implant systems being provided, the ion beam output end of the ion implant systems is provided at least one set of stacking
Faraday cup；
Step 2: carrying out first in the first plane perpendicular to the ion beam incident direction using the stacking Faraday cup
Two-dimensional ion beam distribution measuring, to obtain the first center of mass point of the ion beam distribution in first plane；
Step 3: determining first matter of the ion beam distribution in the second plane perpendicular to the ion beam incident direction
The subpoint of heart point, wherein second plane and first plane have the first distance along ion beam incident direction；
Step 4: the second two-dimensional ion beam distribution measuring is carried out in second plane using the stacking Faraday cup, to obtain
Obtain the second center of mass point of the ion beam distribution in second plane；
Step 5: being calculated according to the position and the first distance of the subpoint of first center of mass point and second center of mass point
The incident angle of the ion beam.
2. the method according to claim 1, wherein the opening for stacking Faraday cup is towards the ion beam
Incident direction.
3. the method according to claim 1, wherein further including establishing using the ion beam incident direction as Z axis
The three-dimensional cartesian coordinate system in direction makes the subpoint of first center of mass point and second center of mass point be located at the three-dimensional right angle
The X-Y coordinate face of coordinate system.
4. according to the method described in claim 3, it is characterized in that, the Faraday cup that stacks is by along the one of Y-axis or X-axis arrangement
Group Faraday cup is constituted.
5. according to the method described in claim 4, it is characterized in that, the Faraday cup is connected with current measuring device.
6. according to the method described in claim 4, it is characterized in that, the first two-dimensional ion beam distribution measuring and described second
Two-dimensional ion beam distribution measuring includes that stacking faraday's cup edge X-axis or Y-axis translate second distance.
7. according to the method described in claim 6, it is characterized in that, the ion implant systems further include target, to make
For the receptor of ion implanting, the length of the second distance is greater than the diameter of the target.
8. the method according to claim 1, wherein being surveyed at first center of mass point and second center of mass point
The electric current obtained is maximum.
9. according to the method described in claim 4, it is characterized in that, the ion beam X-direction incident angle according to institute
It states the subpoint of the first center of mass point and the X axis coordinate component difference of second center of mass point and first distance calculates.
10. according to the method described in claim 4, it is characterized in that, the ion beam Y direction incident angle according to institute
It states the subpoint of the first center of mass point and the Y axis coordinate component difference of second center of mass point and first distance calculates.
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| CN111769030A (en) * | 2019-04-02 | 2020-10-13 | 北京中科信电子装备有限公司 | Device and method for measuring density distribution of beam in vertical direction |
| CN109841472A (en) * | 2019-04-15 | 2019-06-04 | 德淮半导体有限公司 | Ion beam detection system and method, ion implantation apparatus |
| CN114334591B (en) * | 2021-12-30 | 2024-03-08 | 粤芯半导体技术股份有限公司 | Method for measuring ion beam current distribution |
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| CN203812850U (en) * | 2014-05-12 | 2014-09-03 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation detection system and ion implanter |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
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