CN103779358A - 一种阵列基板及其制作方法、显示装置 - Google Patents

一种阵列基板及其制作方法、显示装置 Download PDF

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CN103779358A
CN103779358A CN201410039812.7A CN201410039812A CN103779358A CN 103779358 A CN103779358 A CN 103779358A CN 201410039812 A CN201410039812 A CN 201410039812A CN 103779358 A CN103779358 A CN 103779358A
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barrier layer
aluminium
aluminium alloy
layer
alloy layer
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孔祥永
孙宏达
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BOE Technology Group Co Ltd
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Priority to US14/429,279 priority patent/US9601338B2/en
Priority to PCT/CN2014/083429 priority patent/WO2015109811A1/zh
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Abstract

本发明公开了一种阵列基板及其制作方法、显示装置，用以消除金属铝或铝合金形成在衬底基板上之后遇高温产生小丘的不良现象。所述阵列基板包括：衬底基板；位于衬底基板上的电极；所述电极包括：位于衬底基板上的铝层或铝合金层；位于所述铝层或铝合金层上用于阻挡所述铝层或铝合金层起丘的第一阻挡层；该第一阻挡层为氮化铝层。

Description

一种阵列基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
在平板显示技术领域，大尺寸、高分辨率以及高画质的平板显示装置，如液晶电视，在当前的平板显示器市场已经占据了主导地位。
显示面板中包括各种各样的电极，制作电极的材料也较多。例如，为了避免信号的延迟，通过电阻较小的金属铜（Cu）制作源极、漏极、栅极以及栅线、数据线和公共电极等电极，以减小图像信号的延迟，但是存在以下缺点：Cu在较高温度的条件下（如450℃），Cu离子会扩散并穿过绝缘层，从而会影响TFT的性能。并且铜金属的成本较高，不利于实现低成本高性能的显示。
因此，目前的显示面板，如液晶显示面板（Liquid Crystal Display，LCD）和有机发光显示面板（Organic Light Emitting Diode，OLED），一般采用成本较低、导电性较高、金属离子扩散性非常小的金属铝（Al）制作电极。但是纯铝沉积在基板上后经高温时（如300℃）表面容易形成小丘（即hillock现象）。这种现象是因为，受热后的基板（一般为玻璃基板）与铝层的热膨胀系数不同。铝层靠近基板的一侧膨胀受限，远离基板的一侧膨胀形成小丘。
发明内容
本发明实施例提供一种阵列基板及其制作方法、显示装置，用以消除金属铝形成在衬底基板上之后遇高温产生小丘的不良现象。
本发明实施例提供的一种阵列基板包括：
衬底基板；位于衬底基板上的电极；
所述电极包括：位于衬底基板上的铝层或铝合金层；
位于所述铝层或铝合金层上用于阻挡所述铝层或铝合金层起丘的第一阻挡层；该第一阻挡层为氮化铝层。
较佳地，所述电极还包括：位于所述衬底基板与所述铝层或铝合金层之间用于阻挡所述铝层或铝合金层起丘的第二阻挡层。
较佳地，所述第二阻挡层包含掺杂有氮离子的铝复合层。
较佳地，所述电极还包括位于所述铝层或铝合金层与所述第一阻挡层之间的第三阻挡层；所述第三阻挡层包含掺杂有氮离子的铝复合层。
较佳地，所述电极为位于衬底基板上的栅极、源极、漏极、栅线、数据线、阴极、阳极和电极引线至少之一。
本发明实施例还提供一种阵列基板的制作方法，包括：
在衬底基板上形成覆盖整个衬底基板的铝层或铝合金层；
在所述铝层或铝合金层上形成用于阻挡所述铝层或铝合金层起丘的第一阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺，形成对应的电极图形；所述第一阻挡层为氮化铝层。
较佳地，在形成所述铝层或铝合金层之前还包括：
在所述衬底基板上形成用于阻挡所述铝层或铝合金层起丘的第二阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺的同时还包括，根据所述电极图形对所述第二阻挡层进行构图工艺。
较佳地，在形成所述第一阻挡层之后，进行构图工艺之前还包括：在所述铝层或铝合金层上形成第三阻挡层；所述根据电极图形对所述铝层或铝合金层、第一阻挡层和第二阻挡层进行构图工艺的同时还包括根据所述电极图形对所述第三阻挡层进行构图工艺。
较佳地，形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层，具体为：
在成膜腔室内以金属铝为靶材，对所述靶材进行溅射，在衬底基板上依次形成第二阻挡层、铝层或铝合金层、第三阻挡层和第一阻挡层；
其中，在形成所述第二阻挡层的时间段内通入第一预设比例的氮气和氩气；在形成所述铝层或铝合金层的时间段内通入氩气；在形成所述第三阻挡层的时间段内通入第三预设比例的氮气和氩气；在形成所述第一阻挡层的时间段内通入第二预设比例的氮气和氩气。
较佳地，所述第一预设比例的氮气的流量百分比为1%～6%，形成的第二阻挡层包含掺杂有氮离子的铝复合层；
所述第三预设比例的氮气的流量百分比为1%～6%，形成的第三阻挡层包含掺杂有氮离子的铝复合层；
所述第二预设比例的氮气的流量百分比为6%～60%，形成的第一阻挡层为氮化铝层。
较佳地，所述电极图形为位于衬底基板上的栅极图形、源极图形、漏极图形、栅线图形、数据线图形、阴极图形、阳极图形和电极引线图形至少之一。
本发明实施例提供一种显示装置，包括上述任一方式的阵列基板。
综上所述，本发明实施例提供一种阵列基板，包括：衬底基板；位于衬底基板上的电极；所述电极包括：位于衬底基板上的铝层或铝合金层；位于所述铝层或铝合金层上用于阻挡所述铝层或铝合金层起丘的第一阻挡层；该第一阻挡层为氮化铝层。本发明在衬底基板上的铝层或铝合金层的上方设置了第一阻挡层，该第一阻挡层为氮化铝层，其膨胀系数较小，在高温环境下不会发生形变，因此，可以阻挡所述铝层或铝合金层起丘。
附图说明
图1为本发明实施例提供的阵列基板结构示意图之一；
图2为本发明实施例提供的阵列基板结构示意图之二；
图3本发明实施例提供的阵列基板结构示意图之三。
具体实施方式
本发明实施例提供一种阵列基板及其制作方法、显示装置，用以消除金属铝或铝合金形成在衬底基板上之后遇高温产生小丘的不良现象。
以下将结合附图具体说明本发明实施例提供的阵列基板及其制作方法、显示装置。
参见图1，为本发明实施例提供的阵列基板截面示意图，包括：
衬底基板1；
位于衬底基板1上的电极2：
电极2包括：位于衬底基板1上的铝层或铝合金层11；位于铝层或铝合金层11上用于阻挡所述铝层或铝合金层11起丘的第一阻挡层12；该第一阻挡层12为氮化铝层。
衬底基板1的材质不限，较佳地，为玻璃基板。
所述电极可以为位于衬底基板上的栅极、源极、漏极、栅线，或数据线、有机发光器件（OLED）中的阴极或阳极、位于***区域的各种电极引线等。这里就不一一列举，任何制作在衬底基板上采用铝层或铝合金层制作而成的结构均适用于本发明。
一般地，铝层或铝合金层在高温受热时的膨胀系数较大，在无其他阻挡层的作用下容易变形，随着温度的增加，容易发生弹性形变，例如铝层或铝合金层在极限温度130℃左右，达到承受内部压缩应力的极限，通过原子扩散的方式释放压缩应力，在铝层或铝合金层的表面形成小丘（即hillock）。
本发明在衬底基板上的铝层的上方设置了第一阻挡层，该第一阻挡层为氮化铝层，其膨胀系数较小，与衬底基板的附着性也较好，在高温环境下不会发生形变，因此，可以阻挡所述铝层起丘。
另外，第一阻挡层12为氮化铝层，不但可以避免铝层表面产生小丘的现象，还起到绝缘的作用，对电极的表面起保护作用。在制作电极的同时，将电极上的绝缘层也制作出来，简化了制作电极和绝缘层的工艺流程。
虽然，铝层或铝合金层靠近衬底基板的一侧在衬底基板的作用下起丘的几率较小，但是不同材料形成的衬底基板上制作铝层或铝合金层，高温作用下也会有不同程度的hillock。
为了进一步阻挡所述铝层或铝合金层起丘，参见图2，在图1所示的阵列基板的基础上，进一步包括：
电极2还包括：
位于衬底基板1上与铝层或铝合金层11之间用于阻挡所述铝层或起丘的第二阻挡层13。优选地，第二阻挡层13为包含掺杂有氮离子的导电层，优选地，第二阻挡层13为包含掺杂有氮离子的铝复合层。
本发明图2所示的阵列基板，在铝层或铝合金层的两侧均设置了阻挡层，分别为第一阻挡层和第二阻挡层，该第二阻挡层的膨胀系数也较小，在高温环境下不会发生形变，因此，可以阻挡所述铝层或铝合金层起丘。在铝层或铝合金层被第一阻挡层和第二阻挡层夹在中间，在高温环境下，铝层或铝合金层不容易发生变形，也就进一步避免了铝层或铝合金层在高温作用下产生小丘的不良现象。
为了进一步阻挡所述铝层或铝合金层起丘，参见图3，在图2所示的阵列基板的基础上，进一步包括：位于第一阻挡层12和铝层或铝合金层11之间的用于阻挡所述铝层或铝合金层起丘的第三阻挡层14。
优选地，第三阻挡层14为包含掺杂有氮离子的铝复合层，该层可以导电，不但可以避免铝层或铝合金层表面产生小丘的现象，还对电极的导电性有一定贡献。
优选地，当第二阻挡层13和第三阻挡层14材料相同，热膨胀系数相同，铝层或铝合金层11的两侧受到的阻挡作用相同，不容易发生变形，不容易形成小丘。
第一阻挡层12为氮化铝层，不但可以避免金属铝层表面产生小丘的现象，还起到绝缘的作用，对电极的表面起保护作用。在制作电极的同时，将电极上的绝缘层也制作出来，简化了制作电极和绝缘层的工艺流程。此外，氮化铝层绝缘层与掺杂有氮离子的铝复合层具有相同的元素，二者的结合力较好。在制作类似薄膜晶体管中的栅极、源极和漏极等电极以及其上的绝缘层时，采用本发明所述的电极结构可以起到更好的效果。
另外，本发明图1至图3所示的阵列基板结构，仅是一种示例，在具体实施时，第一阻挡层和第二阻挡层的材料可以为任何能够起到阻挡高温环境下铝层或铝合金层发生变形作用的材料即可。
本发明实施例提供的电极可以为任何适合用铝制成的电极，例如可以为阵列基板上的栅极、源极和漏极至少之一，和/或还可以为栅线、数据线、栅极引线、源极引线中的至少之一，这里就不一一列举。
以下将以图1至图3所示的阵列基板为例说明本发明实施例提供的阵列基板的制作方法。
阵列基板的制作方法总体包括：
在衬底基板上形成覆盖整个衬底基板的铝层或铝合金层；
在所述铝层或铝合金层上形成用于阻挡所述铝层或铝合金层起丘的第一阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺，形成对应的电极图形；所述第一阻挡层为氮化铝层。
优选地，所述电极图形为位于衬底基板上的栅极图形、源极图形、漏极图形、栅线图形、数据线图形、阴极图形、阳极图形和电极引线图形至少之一。
针对图2所示的阵列基板，在上述步骤的基础上，优选地，在形成所述铝层或铝合金层之前还包括：
在所述衬底基板上形成用于阻挡所述铝层或铝合金层起丘的第二阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺的同时还包括，根据所述电极图形对所述第二阻挡层进行构图工艺。
针对图3所示的阵列基板，在上述步骤的基础上，进一步地，在形成所述第一阻挡层之后，进行构图工艺之前还包括在所述铝层或铝合金层上形成第三阻挡层；所述根据电极图形对所述铝层或铝合金层、第一阻挡层和第二阻挡层进行构图工艺的同时还包括根据所述电极图形对所述第三阻挡层进行构图工艺。
在形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层之前，设置成膜腔体内的靶材为铝或铝合金；在成膜之前成膜腔体内通入氮气和氩气（N2和氩气Ar）,氩气Ar作为保护气体，氮气N2作为反应气体；
形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层，具体为：
氮气和氩气的总流量为100%,氮气的流量百分比根据成膜的类型不同而不同。通过溅射法在成膜腔室内依次形成第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层。
较佳地，形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层，具体为：
优选地，形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层，具体为：
在成膜腔室内以金属铝为靶材，对所述靶材进行溅射，在衬底基板上依次形成第二阻挡层、铝层或铝合金层、第三阻挡层和第一阻挡层；
其中，在形成所述第二阻挡层的时间段内通入第一预设比例的氮气和氩气；在形成所述铝层或铝合金层的时间段内通入氩气；在形成所述第三阻挡层的时间段内通入第三预设比例的氮气和氩气；在形成所述第一阻挡层的时间段内通入第二预设比例的氮气和氩气。
较佳地，所述第一预设比例的氮气的流量百分比为1%～6%，形成的第二阻挡层包含掺杂有氮离子的铝复合层；
所述第三预设比例的氮气的流量百分比为1%～6%，形成的第三阻挡层包含掺杂有氮离子的铝复合层；
所述第二预设比例的氮气的流量百分比为6%～60%，形成的第一阻挡层为氮化铝层。
上述本发明实施例提供的阵列基板的制作方法，在同一次成膜工艺中完成多层不同材料形成的膜层，仅通过控制氮气和氩气的流量比，控制形成膜层的类型，通过控制氮气和氩气通过的时间控制成膜的厚度。简化了制作电极的流程，提高了制作电极的效率。
此外，阵列基板上的任何其他电极，例如触摸驱动电极和触摸感应电极等均可以采用本发明上述实施例提供的电极结构。在此就不一一列举。
本发明实施例还提供一种显示装置，包括上述阵列基板，该显示装置可以为液晶面板、液晶显示器、液晶电视、有机电致发光显示OLED面板、OLED显示器、OLED电视或电子纸等显示装置。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (12)

1.一种阵列基板，其特征在于，包括：
衬底基板；位于衬底基板上的电极；
所述电极包括：位于衬底基板上的铝层或铝合金层；
位于所述铝层或铝合金层上用于阻挡所述铝层或铝合金层起丘的第一阻挡层；该第一阻挡层为氮化铝层。
2.根据权利要求1所述的阵列基板，其特征在于，所述电极还包括：位于所述衬底基板与所述铝层或铝合金层之间用于阻挡所述铝层或铝合金层起丘的第二阻挡层。
3.根据权利要求2所述的阵列基板，其特征在于，所述第二阻挡层包含掺杂有氮离子的铝复合层。
4.根据权利要求3所述的阵列基板，其特征在于，所述电极还包括位于所述铝层或铝合金层与所述第一阻挡层之间的第三阻挡层；所述第三阻挡层包含掺杂有氮离子的铝复合层。
5.根据权利要求1所述的阵列基板，其特征在于，所述电极为位于衬底基板上的栅极、源极、漏极、栅线、数据线、阴极、阳极和电极引线至少之一。
6.一种阵列基板的制作方法，其特征在于，包括：
在衬底基板上形成覆盖整个衬底基板的铝层或铝合金层；
在所述铝层或铝合金层上形成用于阻挡所述铝层或铝合金层起丘的第一阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺，形成对应的电极图形；所述第一阻挡层为氮化铝层。
7.根据权利要求6所述的方法，其特征在于，在形成所述铝层或铝合金层之前还包括：
在所述衬底基板上形成用于阻挡所述铝层或铝合金层起丘的第二阻挡层；
根据待形成的电极图形对所述铝层或铝合金层以及第一阻挡层进行构图工艺的同时还包括，根据所述电极图形对所述第二阻挡层进行构图工艺。
8.根据权利要求7所述的方法，其特征在于，在形成所述第一阻挡层之后，进行构图工艺之前还包括：在所述铝层或铝合金层上形成第三阻挡层；所述根据电极图形对所述铝层或铝合金层、第一阻挡层和第二阻挡层进行构图工艺的同时还包括根据所述电极图形对所述第三阻挡层进行构图工艺。
9.根据权利要求8所述的方法，其特征在于，形成所述第二阻挡层、铝层或铝合金层，第三阻挡层和第一阻挡层，具体为：
在成膜腔室内以金属铝为靶材，对所述靶材进行溅射，在衬底基板上依次形成第二阻挡层、铝层或铝合金层、第三阻挡层和第一阻挡层；
其中，在形成所述第二阻挡层的时间段内通入第一预设比例的氮气和氩气；在形成所述铝层或铝合金层的时间段内通入氩气；在形成所述第三阻挡层的时间段内通入第三预设比例的氮气和氩气；在形成所述第一阻挡层的时间段内通入第二预设比例的氮气和氩气。
10.根据权利要求9所述的方法，其特征在于，所述第一预设比例的氮气的流量百分比为1%～6%，形成的第二阻挡层包含掺杂有氮离子的铝复合层；
所述第三预设比例的氮气的流量百分比为1%～6%，形成的第三阻挡层包含掺杂有氮离子的铝复合层；
所述第二预设比例的氮气的流量百分比为6%～60%，形成的第一阻挡层为氮化铝层。
11.根据权利要求6所述的方法，其特征在于，所述电极图形为位于衬底基板上的栅极图形、源极图形、漏极图形、栅线图形、数据线图形、阴极图形、阳极图形和电极引线图形至少之一。
12.一种显示装置，其特征在于，包括权利要求1-5任一所述的阵列基板。
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