CN103700564A - Preparation device for molded interconnection device - Google Patents
Preparation device for molded interconnection device Download PDFInfo
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- CN103700564A CN103700564A CN201310734360.XA CN201310734360A CN103700564A CN 103700564 A CN103700564 A CN 103700564A CN 201310734360 A CN201310734360 A CN 201310734360A CN 103700564 A CN103700564 A CN 103700564A
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- plastic casing
- interconnection element
- wire casing
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- dust
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Abstract
The invention relates to a preparation device for a molded interconnection device. The preparation device comprises an injection molding machine, a laser etching machine, vacuum plasma treatment equipment, blow-washing equipment and a plating machine, wherein the injection molding machine is used for forming the plastic casing of the molded interconnection device through injection molding; the laser etching machine is used for drawing a circuit diagram and forming corresponding wire chases on the surface of the plastic casing; the vacuum plasma treatment equipment is used for performing plasma etching on dust in the wire chases on the laser-etched surface of the plastic casing and pollutants splashed to the outside of the wire chases, and performing plasma activation on the blow-washed surface of the plastic casing; the blow-washing equipment is used for perform blow-washing on the dust and pollutants on the etched surface of the plastic casing; the plating machine is used for metalizing the wire chases on the activated surface of the plastic casing. According to the preparation device, the dust in the wire chases on the surface of the plastic casing and the pollutants splashed to the outside of the wire chases are subjected to plasma etching, blow washing and then plasma activation treatment so as to avoid affecting the metallization procedure and improve the qualification rate of the molded interconnection device; compared with the prior art, the preparation device saves manual labor and improves the work efficiency.
Description
Technical field
The invention belongs to field, relate to specifically a kind of preparation facilities of molding interconnection element.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be and removes outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, with vacuum pump, realize certain vacuum degree, along with gas is more and more thin, the free movement distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, on the not impact of the performance of material internal bulk material, is desirable surface modification means.
Electronics manufacturing is more and more pursued miniaturization and the densification of electronic devices and components, because 3D-MID technology can reduce the component number of electronic product, 3D-MID technology is widely used in the fields such as communication, automotive electronics, computer, electromechanical equipment and medicine equipment.3D-MID technology refers on the surface of the plastic casing of injection mo(u)lding, be manufactured with measurements of the chest, waist and hips stereo circuit and the interconnection element of electric function, and traditional PCB can only arrange electronic component on two-dimensional space, 3D-MID reduces the quantity of components and parts and reduces costs by integrating connector, socket or other device.In prior art, the manufacture craft of 3D-MID comprises three key steps: injection mo(u)lding, the processing of laser radium carving and circuit pattern metallization.In above-mentioned manufacture craft, the carving processing of laser radium be when frosting is depicted circuitous pattern also by the ablated surface at light scanning place, make it to present corresponding wire casing on microcosmic, for metallization operation below.But, in laser radium carving process, can produce dust and spatter pollutant outward, can cause coating to come off or short circuit, therefore must be through cleaning before coating.At present be manual operations, increase cost of labor, and efficiency be low.
Therefore, need a kind of processing unit that the molding interconnection element of efficiency can be provided badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of preparation facilities of molding interconnection element is provided.
The technical scheme that realizes the object of the invention is: the preparation facilities of molding interconnection element, comprising:
Injection molding machine, described injection molding machine forms the plastic casing of molding interconnection element for injection moulding;
Laser radium carving machine, described laser radium carving machine utilizes laser that the surface of plastic casing is depicted to circuitous pattern and formed corresponding wire casing;
Vacuum plasma treatment equipment, described vacuum plasma treatment equipment is for carrying out the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing plasma etching outward and the plastic casing surface after purge is carried out plasma-activated;
Purge means, described purge means is for carrying out purge by the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing outward;
Plater, described plater is by the wire casing metallization on the plastic casing surface after activation.
Further, described vacuum plasma treatment equipment comprises reaction chamber, high frequency electric source, material tray, source of the gas, negative pressure device and at least one pair of electrode assemblie, every pair of electrode assemblie comprises two plate electrodes that are set in parallel in reaction chamber, described material tray is set in parallel between two plate electrodes, the both positive and negative polarity of described high frequency electric source is connected with every pair of electrode assemblie respectively, and described source of the gas, negative pressure device are connected with described reaction chamber respectively.
Further, on described each plate electrode, offer some electrode pores that run through plate electrode.
Further, on described material tray, offer some pallet pores that run through material tray.
Further, described negative pressure device is vacuum pump or pump group.
Further, the frequency range of described high frequency electric source is 10Khz-100Khz or 13.56MHz.
The present invention has positive effect: the present invention adopts vacuum plasma treatment equipment that the dust of wire casing inside, plastic casing surface and the pollutant splashing outside wire casing are carried out to plasma etching, purge and plasma-activated outward, avoid dust and spatter pollutant outward exerting an influence in metallization operation, improve the qualification rate of molding interconnection element, compared to prior art, save manpower, improved operating efficiency.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below, wherein:
Fig. 1 is workflow diagram of the present invention;
Fig. 2 is the structural representation of first embodiment of the invention;
Fig. 3 is the structural representation of second embodiment of the invention.
Wherein: 1, plate electrode, 2, material tray, 3, pallet pore, 4, electrode pore, 5, reaction chamber.
Embodiment
As shown in Figure 1 to Figure 2, as the first preferred embodiment, the present embodiment provides a kind of preparation facilities of molding interconnection element, comprising:
Injection molding machine, injection molding machine forms the plastic casing of molding interconnection element for injection moulding;
Laser radium carving machine, laser radium carving machine utilizes laser that the surface of plastic casing is depicted to circuitous pattern and formed corresponding wire casing;
Vacuum plasma treatment equipment, vacuum plasma treatment equipment is for carrying out the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing plasma etching outward and the plastic casing surface after purge is carried out plasma-activated;
Purge means, purge means is for carrying out purge by the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing outward;
Plater, plater is by the wire casing metallization on the plastic casing surface after activation.
The vacuum plasma treatment equipment that the present embodiment provides comprises reaction chamber 5, high frequency electric source, material tray 2, source of the gas, negative pressure device and two pairs of electrode assemblies, every pair of electrode assemblie comprises two plate electrodes 1 that are set in parallel in reaction chamber, on each plate electrode 1, offer 66 electrode pores 4 that run through plate electrode 1, electrode pore 4 is convenient to reacting gas in plasma treatment procedure and is circulated and be uniformly distributed at reaction chamber 5, improve treatment effeciency, material tray 2 is set in parallel between two plate electrodes 1, the both positive and negative polarity of high frequency electric source is connected with every pair of electrode assemblie respectively, source of the gas, negative pressure device is connected with reaction chamber 5 respectively, negative pressure device is vacuum pump or pump group, can select as required, the frequency range of high frequency electric source is 10Khz-100Khz or 13.56MHz, specifically be not construed as limiting.
Below the operation principle of the present embodiment is described further:
Adopt injection molding machine injection moulding to form the plastic casing of molding interconnection element; Adopt laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing; Adopt vacuum plasma equipment to pass into etching gas the dust of wire casing inside and the pollutant splashing outward outside wire casing after plastic casing surface laser radium carving are carried out to plasma etching; Adopt purge means to pass into purge gas the dust after plastic casing surface etch and pollutant are carried out to purge; Adopt vacuum plasma equipment to pass into activated gas and the plastic casing surface after purge is carried out plasma-activated, make the wire casing on plastic casing surface recover to electroplate performance; By the wire casing metallization of the plastic casing surface circuit figure after activation.
The present embodiment adopts vacuum plasma treatment equipment that the dust of wire casing inside, plastic casing surface and the pollutant splashing outside wire casing are carried out to plasma etching, purge and plasma-activated outward, avoid dust and spatter pollutant outward exerting an influence in metallization operation, improve the qualification rate of molding interconnection element, compared to prior art, save manpower, improved operating efficiency.
As shown in Figure 3, as the second preferred embodiment, all the other are identical with embodiment 1, and difference is, offers 66 pallet pores 3 that run through material tray 2 on the material tray 2 that the present embodiment provides.
In the present embodiment, pallet pore 3 is convenient in plasma treatment procedure reacting gas in reaction chamber 5 circulations and is uniformly distributed, and improves treatment effeciency.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. the preparation facilities of molding interconnection element, is characterized in that, comprising: injection molding machine, and described injection molding machine forms the plastic casing of molding interconnection element for injection moulding;
Laser radium carving machine, described laser radium carving machine utilizes laser that the surface of plastic casing is depicted to circuitous pattern and formed corresponding wire casing;
Vacuum plasma treatment equipment, described vacuum plasma treatment equipment is for carrying out the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing plasma etching outward and the plastic casing surface after purge is carried out plasma-activated;
Purge means, described purge means is for carrying out purge by the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing outward;
Plater, described plater is by the wire casing metallization on the plastic casing surface after activation.
2. the preparation facilities of molding interconnection element according to claim 1, it is characterized in that, described vacuum plasma treatment equipment comprises reaction chamber, high frequency electric source, material tray, source of the gas, negative pressure device and at least one pair of electrode assemblie, every pair of electrode assemblie comprises two plate electrodes that are set in parallel in reaction chamber, described material tray is set in parallel between two plate electrodes, the both positive and negative polarity of described high frequency electric source is connected with every pair of electrode assemblie respectively, and described source of the gas, negative pressure device are connected with described reaction chamber respectively.
3. the preparation facilities of molding interconnection element according to claim 2, is characterized in that, offers some electrode pores that run through plate electrode on described each plate electrode.
4. the preparation facilities of molding interconnection element according to claim 3, is characterized in that, offers some pallet pores that run through material tray on described material tray.
5. the preparation facilities of molding interconnection element according to claim 4, is characterized in that, described negative pressure device is vacuum pump or pump group.
6. the preparation facilities of molding interconnection element according to claim 5, is characterized in that, the frequency range of described high frequency electric source is 10Khz-100Khz or 13.56MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310734360.XA CN103700564A (en) | 2013-12-27 | 2013-12-27 | Preparation device for molded interconnection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310734360.XA CN103700564A (en) | 2013-12-27 | 2013-12-27 | Preparation device for molded interconnection device |
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| CN103700564A true CN103700564A (en) | 2014-04-02 |
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| CN201310734360.XA Pending CN103700564A (en) | 2013-12-27 | 2013-12-27 | Preparation device for molded interconnection device |
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Citations (6)
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|---|---|---|---|---|
| DE102004050684A1 (en) * | 2004-10-18 | 2006-04-27 | Oechsler Ag | Three-dimensional injection-molded circuit substrate coated with conductive track pattern, for 3D-MID, uses high-content duroplastic material for injection molding |
| CN1818130A (en) * | 2006-03-20 | 2006-08-16 | 浙江大学 | Production of dual electromagnetic shielding screen by sputtering method |
| CN102691066A (en) * | 2012-06-20 | 2012-09-26 | 苏州大学 | Method and device for treating burrs of electrode plate of lithium battery |
| CN202846021U (en) * | 2012-08-29 | 2013-04-03 | 惠州市裕元华阳精密部件有限公司 | Laser etching machining unit |
| CN103025060A (en) * | 2011-09-27 | 2013-04-03 | 比亚迪股份有限公司 | Preparation method of three-dimensional connecting device |
| CN203617249U (en) * | 2013-12-27 | 2014-05-28 | 苏州市奥普斯等离子体科技有限公司 | Preparation device for molding interconnection component |
-
2013
- 2013-12-27 CN CN201310734360.XA patent/CN103700564A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004050684A1 (en) * | 2004-10-18 | 2006-04-27 | Oechsler Ag | Three-dimensional injection-molded circuit substrate coated with conductive track pattern, for 3D-MID, uses high-content duroplastic material for injection molding |
| CN1818130A (en) * | 2006-03-20 | 2006-08-16 | 浙江大学 | Production of dual electromagnetic shielding screen by sputtering method |
| CN103025060A (en) * | 2011-09-27 | 2013-04-03 | 比亚迪股份有限公司 | Preparation method of three-dimensional connecting device |
| CN102691066A (en) * | 2012-06-20 | 2012-09-26 | 苏州大学 | Method and device for treating burrs of electrode plate of lithium battery |
| CN202846021U (en) * | 2012-08-29 | 2013-04-03 | 惠州市裕元华阳精密部件有限公司 | Laser etching machining unit |
| CN203617249U (en) * | 2013-12-27 | 2014-05-28 | 苏州市奥普斯等离子体科技有限公司 | Preparation device for molding interconnection component |
Non-Patent Citations (1)
| Title |
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| 李洋、刘斌: "塑料壳体上三维电路制造技术现状分析与应用", 《塑料制造》 * |
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Application publication date: 20140402 |