CN203588974U - Vacuum far-zone plasma treating device - Google Patents
Vacuum far-zone plasma treating device Download PDFInfo
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- CN203588974U CN203588974U CN201320809973.0U CN201320809973U CN203588974U CN 203588974 U CN203588974 U CN 203588974U CN 201320809973 U CN201320809973 U CN 201320809973U CN 203588974 U CN203588974 U CN 203588974U
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- chamber
- treating
- vacuum
- electrode assemblie
- processing apparatus
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- 239000000463 material Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- 230000006978 adaptation Effects 0.000 claims description 7
- 230000037452 priming Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000004913 activation Effects 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract 7
- 239000012774 insulation material Substances 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The utility model relates to a vacuum far-zone plasma treating device. The vacuum far-zone plasma treating device comprises a reaction chamber, an electrode assembly, a plasma generator and negative pressured equipment, wherein the reaction chamber comprises a discharging chamber and a treating chamber for activation reaction of a surface of a material, the discharging chamber is arranged above the treating chamber and is communicated with the treating chamber, a top portion of the discharging chamber is provided with an air inlet, a bottom portion of the treating chamber is provided with an air outlet, the electrode assembly is arranged at an outer surface of the discharging chamber, the plasma generator is electrically connected with the electrode assembly, and the negative pressure equipment is connected with the air outlet. According to the vacuum far-zone plasma treating device, the discharging chamber and the treating chamber are vacuumed by the negative pressure equipment, the electrode assembly is driven by the plasma generator to generate an electric field, a reactant air enters from the air inlet and enters the treating chamber after ionization through the discharging chamber to carry out activation reaction of the surface of the material, the material is far from the electric field environment, is suitable for an insulation material and a non-insulation material and satisfies treating demands of various types of materials, the treating chamber is not limited by a space of the discharging chamber, treating on the materials having different areas can be satisfied, and treating is more convenient.
Description
Technical field
The utility model belongs to plasma processing apparatus field, relates to specifically a kind of vacuum far field plasma processing apparatus.
Background technology
Atom after plasma is deprived of by portions of electronics and atom are ionized the ionized gas shape material that the positron-electron of rear generation forms, and it is extensively present in universe, are often considered to be and remove outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, realize certain vacuum degree with vacuum pump, along with gas is more and more thin, the free movement distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, the performance of material internal bulk material is not affected, and be desirable surface modification means.
In prior art, material is to be all placed in electric field, to carry out activation processing, but the impact that is easily subject to electric field for the material of nonisulated property in electric field makes its conducting destroy the performance of material internal bulk material, on the other hand, be subject to the restriction in electric field space region also to have certain restriction to the area of material.
Therefore, need a kind of vacuum plasma treatment apparatus that is applicable to nonisulated performance materials badly.
Utility model content
The purpose of this utility model is to overcome the defect that prior art exists, and a kind of vacuum far field plasma processing apparatus is provided.
The technical scheme that realizes the utility model object is: a kind of vacuum far field plasma processing apparatus, comprise reaction chamber, electrode assemblie, plasma generator and negative pressure equipment, described reaction chamber comprises discharge cavity and the process chamber for material surface priming reaction, described discharge cavity is arranged at described process chamber top and is communicated with described process chamber, described discharge cavity top is provided with gas access, described process chamber bottom is provided with gas vent, described electrode assemblie is arranged at described discharge cavity outer surface, described plasma generator is electrically connected with described electrode assemblie, described negative pressure equipment is connected with described gas vent.
Further, described electrode assemblie is three-dimensional spiral electrode.
Further, described electrode assemblie is a pair of symmetrically arranged ring electrode.
Further, described plasma generator comprises the power supply and the adaptation being connected with described power supply for regulating described electrode assemblie power, and described adaptation is also electrically connected with described electrode assemblie.
Further, described negative pressure equipment is vacuum pump.
Further, between described vacuum pump and described gas vent, be also provided with filter.
The utlity model has positive effect: in the utility model, negative pressure equipment will vacuumize in discharge cavity and process chamber, plasma generator drive electrode assembly generates electric field, reacting gas enters after discharge cavity ionization and enters in process chamber material surface is carried out to priming reaction from gas access, in the utility model, material is away from electric field environment, be applicable to insulating material and non-insulating material, meet the processing demands of various materials, on the other hand, process chamber is not subject to the restriction in discharge cavity space, can meet the material processed of different area, convenient.
Accompanying drawing explanation
For content of the present utility model is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail below, wherein:
Fig. 1 is the structural representation of the utility model the first embodiment;
Fig. 2 is the structural representation of the utility model the second embodiment.
Wherein: 1, gas vent, 2, process chamber, 3, electrode assemblie, 4, discharge cavity, 5, gas access, 6, adaptation, 7, power supply, 8, filter, 9, vacuum pump.
Embodiment
As shown in Figure 1, as the first preferred embodiment, the present embodiment provides a kind of vacuum far field plasma processing apparatus, comprise reaction chamber, electrode assemblie 3, plasma generator (not shown) and negative pressure equipment, reaction chamber comprises discharge cavity 4 and the process chamber 2 for material surface priming reaction, discharge cavity 4 is arranged at process chamber 2 tops and is communicated with process chamber 2, discharge cavity 4 tops are provided with gas access 5, process chamber 2 bottoms are provided with gas vent 1, electrode assemblie 3 is a pair of symmetrically arranged ring electrode, electrode assemblie 3 is arranged at discharge cavity 4 outer surfaces, plasma generator is electrically connected with electrode assemblie 3, negative pressure equipment is connected with gas vent 1.
In the present embodiment, material is placed in process chamber 2, negative pressure equipment will vacuumize in discharge cavity 4 and process chamber 2, plasma generator drive electrode assembly 3 generates electric field, reacting gas enters after discharge cavity 4 ionization and enters in process chamber 2 material surface is carried out to priming reaction from gas access 5, in the present embodiment, material is away from electric field environment, be applicable to insulating material and non-insulating material, meet the processing demands of various materials, on the other hand, process chamber 2 is not subject to the restriction in discharge cavity 4 spaces, can meet the material processed of different area, convenient.
As shown in Figure 2, as the second preferred embodiment, all the other are identical with embodiment 1, difference is, the electrode assemblie 3 that the present embodiment provides is three-dimensional spiral electrode, and plasma generator comprises the power supply 7 and the adaptation 6 being connected with power supply 7 for regulating electrode assemblie 3 power, and adaptation 6 is also electrically connected with electrode assemblie 3, negative pressure equipment is vacuum pump 9, between vacuum pump 9 and gas vent 1, is also provided with filter 8.
In the present embodiment, electrode assemblie 3 is that three-dimensional spiral electrode generation electric field space is large, and power supply 7 can regulate electric field strength as required, thereby realizes different treatment effects.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (6)
1. a vacuum far field plasma processing apparatus, it is characterized in that, comprise reaction chamber, electrode assemblie, plasma generator and negative pressure equipment, described reaction chamber comprises discharge cavity and the process chamber for material surface priming reaction, described discharge cavity is arranged at described process chamber top and is communicated with described process chamber, described discharge cavity top is provided with gas access, described process chamber bottom is provided with gas vent, described electrode assemblie is arranged at described discharge cavity outer surface, described plasma generator is electrically connected with described electrode assemblie, described negative pressure equipment is connected with described gas vent.
2. vacuum according to claim 1 far field plasma processing apparatus, is characterized in that, described electrode assemblie is three-dimensional spiral electrode.
3. vacuum according to claim 1 far field plasma processing apparatus, is characterized in that, described electrode assemblie is a pair of symmetrically arranged ring electrode.
4. according to the vacuum far field plasma processing apparatus described in claim 2 or 3, it is characterized in that, described plasma generator comprises the power supply and the adaptation being connected with described power supply for regulating described electrode assemblie power, and described adaptation is also electrically connected with described electrode assemblie.
5. vacuum according to claim 4 far field plasma processing apparatus, is characterized in that, described negative pressure equipment is vacuum pump.
6. vacuum according to claim 1 far field plasma processing apparatus, is characterized in that, between described vacuum pump and described gas vent, is also provided with filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320809973.0U CN203588974U (en) | 2013-12-11 | 2013-12-11 | Vacuum far-zone plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320809973.0U CN203588974U (en) | 2013-12-11 | 2013-12-11 | Vacuum far-zone plasma treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203588974U true CN203588974U (en) | 2014-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320809973.0U Expired - Lifetime CN203588974U (en) | 2013-12-11 | 2013-12-11 | Vacuum far-zone plasma treating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203588974U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681199A (en) * | 2013-12-11 | 2014-03-26 | 苏州市奥普斯等离子体科技有限公司 | Vacuum far-zone plasma processing device |
-
2013
- 2013-12-11 CN CN201320809973.0U patent/CN203588974U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681199A (en) * | 2013-12-11 | 2014-03-26 | 苏州市奥普斯等离子体科技有限公司 | Vacuum far-zone plasma processing device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140507 |
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| CX01 | Expiry of patent term |