CN103681304B - 电容耦合等离子体处理装置中的喷头电极组件 - Google Patents
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Abstract
本发明公开了一种电容耦合等离子体处理装置中的喷头电极组件,具体涉及用在电容耦合等离子体处理装置中包括传热板的喷头电极组件。该传热板具有独立可控的气体容积空间,该气体容积空间可被增压以局部控制加热器构件和冷却构件之间的热导率,使得可在喷头电极组件的暴露于等离子体的表面上形成均匀的温度。
Description
技术领域
本发明涉及等离子体处理装置,其中传热板用来控制被支撑在电容耦合等离子体处理装置中的喷头电极组件的温度均匀性。
背景技术
半导体衬底(“衬底”)制造往往包括将衬底暴露于等离子体以允许等离子体的反应性组分修改该衬底的表面,例如,从衬底表面的无保护区域移除材料。由等离子体制造工艺导致的衬底特征依赖于工艺条件,该工艺条件包括等离子体特性和衬底温度。例如,在一些等离子体工艺中,衬底表面上的临界尺寸(即,特征宽度)可能每摄氏度衬底温度改变约一纳米。应当知道,在其它条件相同的衬底制造工艺之间,衬底温度的差异会导致不同的衬底表面特征。因此,在等离子体处理过程中,衬底温度的变化可引起不同衬底间的工艺结果的偏差。另外,中心到边缘的衬底温度变化可对每个衬底的裸片良率产生不利影响。
衬底制造中的总体目标是要优化每个衬底的裸片良率以及要以尽可能相同的方式制造通用型的每个衬底。为了满足这些目标,必须控制影响横贯(across)单个衬底的等离子体处理特性和通用型的不同衬底之间的等离子体处理特性的制造参数。因为等离子体组分的反应性与温度成比例,所以衬底的温度和暴露于等离子体的表面(plasmaexposed surface)的温度可对横贯衬底的等离子体处理结果和在不同衬底之间的等离子体处理结果有很大的影响。因此,在等离子体制造工艺中存在对改进温度控制的持续需求。
发明内容
此处所公开的是等离子体处理室的喷头电极组件,其包括喷头电极、被构造来支撑所述喷头电极的温度受控的顶板、被设置在所述温度受控的顶板和所述喷头电极之间的加热器板、以及传热板。所述传热板被设置在所述喷头电极和所述温度受控的顶板之间,其中所述传热板包括多个独立可控的气体容积空间(volume),所述多个独立可控的气体容积空间中的每一个被限定为与所述多个独立可控的气体容积空间中的其它气体容积空间流体地隔离,使得所述多个独立可控的气体容积空间中的任意给定的一个内的气压不影响所述多个独立可控的气体容积空间中的任何其它气体容积空间内的另一气压。
另外,此处所公开的是电容耦合等离子体处理装置,其包括真空室、适于接收半导体衬底的下电极组件、以及如上所述的喷头电极组件。至少一个真空端口被设置在所述真空室的底壁中,且被连接到能够操作来使所述真空室维持在预定真空压强下的至少一个真空泵。气体源通过所述喷头电极组件将工艺气体供应给所述真空室且RF能量源被配置来将所述工艺气体激励成等离子体状态。
进一步地,此处所公开的是在电容耦合等离子体处理装置中处理半导体衬底的方法。该方法包括将半导体衬底置于所述真空室内的所述下电极组件的上表面上。所述传热板中的每一个独立可控的气体容积空间被维持在预定压强以产生横贯所述喷头电极的暴露于等离子体的表面的理想温度分布。横贯所述喷头电极的所述暴露于等离子体的表面的温度被确定且每一个独立可控的气体容积空间中的压强被调节以补偿沿所述喷头电极的所述暴露于等离子体的表面的温度梯度。工艺气体从气体供应源被供应到所述真空室中,所述气体被激励成等离子体状态,且接着用所述等离子体蚀刻所述半导体衬底。
附图说明
图1描绘了根据本文所描述的电极组件的优选实施方式可以使用的示例性等离子体处理装置。
图2A、B示出了喷头电极组件的优选实施方式的剖面图。
图3A、B示出了传热板的示例性实施方式。
具体实施方式
本文所公开的是电容耦合等离子体处理装置的喷头电极组件,现在将参考本发明的如附图所示的一些优选实施方式详细描述该喷头电极组件。在下面的描述中,许多具体细节被阐述以便提供对本发明的透彻理解。但显而易见的是,对本领域技术人员而言,这些实施方式可在没有这些具体细节中的一些或全部的情况下被实施。另一方面,公知的工艺步骤和/或结构不会被详细描述以免不必要地模糊本发明。本文所使用的术语“约”应当解释为包括所列举的值上浮或下浮10%的值。
图1描绘了可被用来实施本文所描述的组件的优选实施方式的示例性等离子体处理装置100。该等离子体处理装置是电容耦合等离子体处理真空室,其可产生等离子体。等离子体处理装置100包括真空室102,真空室102包括室壁103。室壁103的内表面优选地是阳极化铝和/或具有耐等离子体材料涂层,如热喷涂氧化钇涂层。真空室102包括提供在室壁103中的衬底传送狭缝118以传送半导体衬底进出真空室102。
真空室102可包括具有暴露于等离子体的表面108的喷头电极组件104。喷头电极组件104可具有单件电极或多件电极。例如,喷头电极组件104可具有包括喷头电极板的单件构造,或者其可包括喷头电极板和外电极环。在后一种实施方式中,喷头电极板和外电极环可任选地通过接合材料(如弹性体材料)与其接合的或者用合适的紧固件紧固在一起的石墨或金属(比如铝)板支撑。喷头电极组件104可被设定尺寸以处理例如200mm的半导体衬底、300mm的衬底、甚或更大的衬底。喷头电极组件104的喷头电极板(包括多件构造中的外电极环)可以是硅(例如,单晶硅、多晶硅或无定形硅)或碳化硅的。装置100包括用于供应工艺气体给喷头电极组件104的气体源(未图示)。喷头电极组件104优选地由RF供应源106经由匹配网络供电。在另一实施方式中,喷头电极组件104的喷头电极板可接地以提供用于由包括在真空室102的衬底支撑件111中的下电极供应的功率的返回路径,如下所述。
在图1所示的装置100的实施方式中,工艺气体被供应到真空室102中,在喷头电极组件104和被支撑在衬底支撑件111上的半导体衬底10之间形成的等离子体区域处。衬底支撑件111优选地包括通过静电夹持力将半导体衬底10固定在衬底支撑件111上的静电卡盘114(“ESC”)。在实施方式中,ESC114可用作下电极且优选地被RF功率源116偏置(通常通过匹配网络)。ESC114的上表面115优选地具有与半导体衬底10大约相同的直径。
在实施方式中,ESC114可进一步包括内嵌的温度控制模块,该温度控制模块包括多个通道(未图示)以提供加热/冷却区域。可以使用的示例性温度控制模块可在共同拥有的美国专利No.8,083,855中找到,在此通过参考将其全文并入。
衬底支撑件111可进一步包括用于横贯喷头电极组件104的暴露于等离子体的表面108测量温度的至少一个温度传感器150。温度传感器150可以是激光干涉仪或者其它合适的传感器,且优选地被连接到用于处理由所述传感器获得的温度测量结果的控制器。在替代实施方式中,温度传感器150可被并入喷头电极组件104中。
真空室102可包括连接到至少一个真空泵(未图示)的至少一个真空端口(未图示)。真空泵适于在真空室102内维持预定的真空压强。工艺气体和反应副产品通常朝由箭头110所示的方向被所述泵抽出。
可以使用的示例性电容耦合等离子体反应室是双频等离子体蚀刻反应器(参见例如共同受让的美国专利No.6,090,304,在此通过参考将该专利的全文并入)。在这样的反应器中,蚀刻气体可从气体供应源被供应给喷头电极,而通过从两个RF源供应RF能量给喷头电极和/或下电极可在反应器中产生等离子体,或者喷头电极可电气接地而处于两个不同频率的RF能量可被供应给下电极。
图2A示出了被用在电容耦合等离子体室中的喷头电极组件104的实施方式的剖面图,喷头电极组件104包括喷头电极303和固定到喷头电极303的可选的背衬构件302、加热器板304、以及温度受控的顶板301。加热器板304可具有任选的外加热器构件304a。喷头电极303被设置在支撑半导体衬底10的衬底支撑件111上方(见图1)。
温度受控的顶板301可形成等离子体处理装置的可移开的顶壁。喷头电极303可包括内电极构件、以及可选的外电极构件(未图示)。内电极构件通常由单晶硅制成。如果需要,内电极和外电极可由单件材料(如CVD碳化硅、单晶硅或其它合适材料)制成。
内电极构件可具有小于、等于、或大于待处理的半导体衬底的直径,例如,直至200mm。就处理较大的半导体衬底(如300mm衬底或更大的衬底)而言,外电极构件适用于扩大喷头电极303的直径。外电极构件可以是连续的构件(如,多晶硅或碳化硅构件,比如环)、或者是分段的构件(如,布置为环构造的2-6个分离的区段,比如单晶硅的分段)。替代地,该喷头可以是整体部件。
喷头电极303优选地包括用于将工艺气体注入喷头电极303下方的真空室102中的空间的多个气体通道。外电极优选地可在喷头电极303的***形成凸起的台阶。台阶式电极的进一步的细节可在共同拥有的美国专利No.6,824,627中找到,其公开内容通过参考并入此处。
在实施方式中,喷头电极组件104包括用于控制喷头电极组件104中的热传递的传热板220。传热板220被设置在加热器板304和温度受控顶板301之间且适于包含传热气体,传热气体可被增压以增加加热器板304和温度受控顶板301之间的热导率。在替代实施方式中,如图2B中所示,传热板220可被设置在加热器板304和喷头电极303之间。传热板220包括多个气体容积空间(gas volume),其中每一个气体容积空间是独立可控的使得任意给定的气体容积空间内的气压不影响该多个独立可控的气体容积空间中的任何其它气体容积空间内的另一气压。
当传热板220中的独立可控的气体容积空间经历气压的增加时,邻近传热板220的元件(比如举例来说,温度受控顶板和加热器板)之间的热耦合也增加。热耦合的增加可被用来快速加热喷头电极组件104以便为半导体衬底处理作准备,或者可被用来补偿横贯喷头电极组件104的暴露于等离子体的表面的热梯度并提供更均匀的蚀刻结果。此外,气体可从传热板220的独立可控的气体容积空间排出,其中传热板220用作为绝缘体,而喷头电极组件104中的温度可被维持。
多个独立可控的气体容积空间可保持增压的传热气体,例如,氦、氖、氩、氮、或其混合物。优选地,所用的传热气体是氦。导气管(未图示)被提供在温度受控的顶板301中以与各个独立可控的气体容积空间流体连通。在等离子体处理过程中,传热气体可经由导气管被供应或排出,以在多个独立可控的气体容积空间内达到指定气压。
所述气体容积空间被优选地排布以横贯传热板220的至少一部分径向地和/或呈环形地延伸。通过控制多个独立可控的气体容积空间中的每一个内的气压,并因此控制温度受控顶板301和加热器板304之间或者替代地加热器板304和喷头电极303之间的热导率,可在喷头电极303的暴露于等离子体的表面上形成指定的径向温度梯度。在一实施方式中,特定的独立可控的气体容积空间内的气压可被控制在从约0托扩展至约1个大气压的范围内。优选地,特定的独立可控的气体容积空间内的气压可在从约0托扩展至约10托的范围内。在一实施方式中,氦气被供应给各气体容积空间。但是,在其它实施方式中,其它类型的气体或气体混合物(例如,氮)可被供应给各气体容积空间。
图3A、B示出了传热板220的实施方式的俯视图。传热板包括多个独立可控的气体容积空间,该多个独立可控的气体容积空间中的每一个被限定为与该多个独立可控的气体容积空间中的其它气体容积空间流体地隔离。该多个独立可控的气体容积空间中的任意给定的一个内的气压不影响该多个独立可控的气体容积空间中的任何其它气体容积空间内的另一气压。
如图3A中所示,传热板220可包括16个径向延伸的独立可控的气体容积空间。所述气体容积空间中的8个位于传热板220的内侧区域401中而剩余的8个气体容积空间则位于该传热板的外侧区域402中。每一个独立可控的气体容积空间围绕传热板220的圆周延伸约38°-45°。
图3B示出了传热板220,其中传热板220包括位于传热板220的中心处的第一圆筒形独立可控的气体容积空间420以及自第一圆筒形独立可控的气体容积空间径向向外的3个同中心的环形的独立可控的气体容积空间421a、b、c。但显然,对本领域技术人员而言,传热板220可具有多于三个或少于三个的同中心的环形的独立可控的气体容积空间。
另外,虽然传热板220被描述为具有径向延伸的温度控制容积空间(见图3A),但应当知道的是,在其它实施方式中,传热板220内的各个独立可控的气体容积空间可被限定为与非径向的几何构造对应。例如,在其它实施方式中,传热板220内的各个气体容积空间可被限定在六角划分的(hexagonally divided)构造中或者被限定在四角划分的(quadrant divided)构造中。
在喷头电极组件中,传热板220可局部增加或降低加热器板304和温度受控顶板301之间或替代地加热器板304和喷头电极303之间的热导率。对喷头电极组件中的热导率的更大的控制允许横贯等离子体处理装置中的喷头电极组件的暴露于等离子体的表面获得更均匀的温度。
再参考图1,半导体衬底10在电容耦合等离子体处理装置100中被处理。处理的方法包括将半导体衬底10置于真空室102内的衬底支撑件111的上表面113上。接着,传热板202中的每一个独立可控的气体容积空间被增压至预定压强以获得横贯喷头电极组件104的暴露于等离子体的表面108的理想温度分布。然后,横贯喷头电极组件104的暴露于等离子体的表面108的温度的测量结果被确定且每一个独立可控的气体容积空间中的压强被原位调节以补偿横贯喷头电极的暴露于等离子体的表面的温度梯度。接着,工艺气体从气体供应源被供应到真空室102中,该工艺气体被激励成等离子体状态,并用该等离子体蚀刻半导体衬底。
在替代实施方式中,横贯暴露于等离子体的表面108的温度梯度在蚀刻的同时被测量,且每一个独立可控的气体容积空间中的压强的原位调节通过减少沿喷头电极组件104的暴露于等离子体的表面108的温度梯度被完成以增强蚀刻的均匀性。
虽然已参考本发明的具体实施方式对本发明进行了详细描述,但对本领域技术人员而言,显然可以进行各种改变和修改,且可采用等同方式,却不会背离所附权利要求书的范围。
Claims (22)
1.一种等离子体处理室的喷头电极组件,其包括:
喷头电极;
温度受控的顶板,其被构造来支撑所述喷头电极;
加热器板,其被设置在所述温度受控的顶板和所述喷头电极之间;以及
传热板,其被设置在所述喷头电极和所述温度受控的顶板之间,其中所述传热板包括多个独立可控的气体容积空间,所述多个独立可控的气体容积空间中的每一个与所述多个独立可控的气体容积空间中的其它气体容积空间流体地隔离,使得所述多个独立可控的气体容积空间中的任意给定的一个内的气压不影响所述多个独立可控的气体容积空间中的任何其它气体容积空间内的另一气压,其中横贯所述传热板的热导率分布是通过所述独立可控的气体容积空间可控的。
2.如权利要求1所述的喷头电极组件,其中所述传热板被设置在所述温度受控顶板和所述加热器板之间。
3.如权利要求1所述的喷头电极组件,其中所述传热板被设置在所述加热器板和所述喷头电极之间。
4.如权利要求1所述的喷头电极组件,其中所述独立可控的气体容积空间能够具有径向构造或非径向构造。
5.如权利要求1所述的喷头电极组件,其中所述传热板包括16个径向延伸的独立可控的气体容积空间,其中8个气体容积空间位于所述传热板的内侧区域中,8个气体容积空间位于所述传热板的外侧区域中,每一个独立可控的气体容积空间围绕所述传热板的圆周延伸38°至45°。
6.如权利要求1所述的喷头电极组件,其中所述传热板包括第一圆筒形独立可控的气体容积空间以及自所述第一圆筒形独立可控的气体容积空间径向向外的3个同中心的环形的独立可控的气体容积空间。
7.如权利要求1所述的喷头电极组件,其中供应给所述传热板的所述独立可控的气体容积空间的气体是氦、氖、氩、氮、或其混合物。
8.如权利要求1所述的喷头电极组件,其进一步包括至少一个传感器,所述至少一个传感器被配置来确定横贯所述喷头电极的暴露于等离子体的表面的温度梯度。
9.如权利要求1所述的喷头电极组件,其中所述独立可控的气体容积空间中的每一个能被增压至0托至1个大气压的范围内。
10.如权利要求1所述的喷头电极组件,其中所述独立可控的气体容积空间中的每一个能被增压至0托至10托的范围内。
11.如权利要求1所述的喷头电极组件,其中所述独立可控的气体容积空间能够具有六角划分构造、八角划分构造、或者四角划分构造。
12.一种电容耦合等离子体处理装置,其包括:
真空室;
适于接收半导体衬底的下电极组件;
如权利要求1所述的喷头电极组件;
底壁中的至少一个真空端口,其被连接到能够操作来使所述真空室维持在预定真空压强下的至少一个真空泵;
气体源,其能够操作来通过所述喷头电极组件将工艺气体供应给所述真空室;以及
RF能量供应源,其被配置来将所述工艺气体激励成等离子体状态。
13.如权利要求12所述的电容耦合等离子体处理装置,其中所述传热板被设置在所述温度受控的顶板和所述加热器板之间或者所述传热板被设置在所述加热器板和所述喷头电极之间。
14.如权利要求12所述的电容耦合等离子体处理装置,其中所述传热板的所述独立可控的气体容积空间能够具有径向构造或非径向构造。
15.如权利要求12所述的电容耦合等离子体处理装置,其中所述传热板包括16个径向延伸的独立可控的气体容积空间,其中8个气体容积空间位于所述传热板的内侧区域中,8个气体容积空间位于所述传热板的外侧区域中,每一个独立可控的气体容积空间围绕所述传热板的圆周延伸38°至45°。
16.如权利要求12所述的电容耦合等离子体处理装置,其中所述传热板包括第一圆筒形独立可控的气体容积空间以及自所述第一圆筒形独立可控的气体容积空间径向向外的3个同中心的环形的独立可控的气体容积空间。
17.如权利要求12所述的电容耦合等离子体处理装置,其中所述独立可控的气体容积空间中的每一个能被增压至0托至1个大气压的范围内。
18.如权利要求12所述的电容耦合等离子体处理装置,其中所述独立可控的气体容积空间中的每一个能被增压至0托至10托的范围内。
19.如权利要求12所述的电容耦合等离子体处理装置,其进一步包括至少一个传感器,所述至少一个传感器被配置来确定横贯所述喷头电极的暴露于等离子体的表面的温度梯度。
20.如权利要求12所述的电容耦合等离子体处理装置,其中所述传热板的所述独立可控的气体容积空间能够具有六角划分构造、八角划分构造、或者四角划分构造。
21.一种使用如权利要求12所述的电容耦合等离子体处理装置蚀刻电容耦合等离子体处理装置中的半导体衬底的方法,其包括:
将半导体衬底置于所述真空室内的所述下电极组件的上表面上;
使所述喷头电极组件中所包括的所述传热板中的每一个独立可控的气体容积空间增压至预定压强以产生横贯所述喷头电极的暴露于等离子体的表面的理想温度分布;
横贯所述喷头电极的所述暴露于等离子体的表面测量至少一个温度;
原位调节每一个独立可控的气体容积空间中的所述压强以补偿横贯所述喷头电极的所述暴露于等离子体的表面的温度梯度;
从气体供应源将气体供应到所述真空室中;以及
将所述气体激励成等离子体状态并用所述等离子体蚀刻所述半导体衬底。
22.如权利要求21所述的方法,其进一步包括在蚀刻的同时测量横贯所述暴露于等离子体的表面的温度梯度,并通过减少沿所述喷头电极的所述暴露于等离子体的表面的温度梯度来原位调节每一个独立可控的气体容积空间中的所述压强以达到更均匀的蚀刻。
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