CN103644999A - Low-range and high-sensitivity micro-electromechanical system (MEMS) pressure sensor and manufacture method thereof - Google Patents
Low-range and high-sensitivity micro-electromechanical system (MEMS) pressure sensor and manufacture method thereof Download PDFInfo
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- CN103644999A CN103644999A CN201310706910.7A CN201310706910A CN103644999A CN 103644999 A CN103644999 A CN 103644999A CN 201310706910 A CN201310706910 A CN 201310706910A CN 103644999 A CN103644999 A CN 103644999A
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Abstract
The invention discloses a low-range and high-sensitivity micro-electromechanical system (MEMS) pressure sensor which comprises a monocrystalline silicon layer (1), a porous silicon/ silicon composite membrane structure (6), a porous silicon voltage dependent resistor (7) and a metal layer (8), wherein the back surface of the monocrystalline silicon layer (1) is provided with a concave cavity; the porous silicon/ silicon composite membrane structure (6) is formed in the concave cavity in the back surface of the monocrystalline silicon layer (1); the porous silicon voltage dependent resistor (7) is formed on the front surface of the monocrystalline silicon layer (1); the metal layer (8) is deposited on the porous silicon voltage dependent resistor (7) and has a function of metal interconnection. The invention further discloses a manufacture method of the low-range and high-sensitivity MEMS pressure sensor. Porous silicon materials have excellent piezoresistive performance and mechanical performance, and therefore, the porous silicon MEMS pressure sensor adopting the structure can keep degree of linearity and improve sensitivity simultaneously, and can be applied within a superlow pressure range by means of flexible structure design.
Description
Technical field
The invention belongs to MEMS pressure transducer manufacturing technology field, be specifically related to a kind of lower range high sensitivity MEMS pressure transducer based on two-sided porous silica material and preparation method thereof.
Background technology
MEMS pressure transducer has overcome the defect of traditional mechanical compression sensor, has microminiaturization, highly sensitive, good stability, cost is low and it is integrated to be easy to and intelligentized outstanding advantage.Sensitivity and non-linear be the most important technical parameter of pressure transducer.Its sensitive mechanism is mechanically deform and the stress based on caused pressure-sensitive film by measuring pressure, and canonical form has pressure resistance type, condenser type and resonant mode three types.With respect to condenser type and resonant mode, piezoresistive pressure sensor manufacturing process and signal processing circuit are simple, and input and output exist good linear relationship, thereby most widely used general.
The development of pressure resistance type MEMS silicon micro-pressure sensor is mainly around conversion element and sensing element, and that on the one hand voltage dependent resistor (VDR) strain is done is more accurate and more stable; On the other hand, be that the structure of pressure-sensitive film and process technology are transformed.Business-like flat film piezoresistive pressure sensor is commonly used to the pressure transducer of high range in making, for low pressure sensor, in order to increase sensitivity, very thin (10um even 5um is following) that film need to be done, make the non-linear behaviour of device worsen (i.e. " balloon effect "), when 1kPa left and right, surpassed 10%.The preparation of pressure-sensitive film has developed the micromachining technologies such as etch stop technology, electrostatic bonding, for the structure of pressure-sensitive film, from the concentrated principle of stress, has experienced flat membrane structure, island membrane structure, fine strain of millet membrane structure Huo Liang island film unitized construction etc.Complicated pressure sensitive film structure can realize the good linearity under kPa range, but will further reduce range, and non-linear behaviour can worsen fast, and simultaneously more complicated structure can further increase the technology difficulty of preparation, reduces yield rate.
For low pressure or ultralow pressure pressure transducer, adopt the new material of pressure drag excellent performance to replace traditional silicon fiml, realize the highly sensitive pressure transducer performance that is applied to lower range scope, be the focus of studying in current MEMS/NEMS technical field.The carbon nano-tube low pressure sensor of for example preparing on the Research foundation of the pressure drag performance based on single wall and multi-walled carbon nano-tubes is applied to aspect touch-screen or flexible demonstration, the compatibility of carbon nano-tube and device preparation technology is a difficult point, and still has distance apart from the practical requirement of large area and preparation in batches.With respect to body silicon materials, theoretical modeling and experimental study show that p-type and N-shaped silicon nanowires have high piezoresistance coefficient.Porous silicon is a kind of novel Nano semiconductor photoelectric material in recent years, the optics of porous silicon and electrology characteristic and extensive at area researches such as gas sensing, humidity sensor, bio-sensings.At present, porous silicon is applied to MEMS device, has high specific surface area, is similar to the characteristic of nanocrystalline quantum line, and with semiconductor silicon device technique and IC process compatible, be easy to practical.
Pressure drag characteristic and mechanical property for porous silicon have certain research work in recent years, the porous silicon of specific pore rate, and its piezoresistance coefficient will exceed more than 1 times than monocrystalline silicon; In mechanical properties, porous silicon has low Young modulus with respect to body silicon, makes porous silicon/silicon compound film system structure be out of shape under pressure sensitiveer.The research of these basic characteristics, has shown that porous silica material is applied in MEMS low-quantum pressure sensor, have potential advantage.For example can be by controlling thickness or the porosity parameter of porous silicon layer, the sensitivity that greatly improves device on the one hand, is applied to ultra low pressure sensor thereby also can reduce on the other hand pressure sensitive film thickness.
Summary of the invention
(1) technical matters that will solve
The object of the present invention is to provide a kind of lower range high sensitivity MEMS pressure transducer based on two-sided porous silica material and preparation method thereof, to utilize the pressure drag performance of porous silica material excellence and sensitivity that mechanical property improves device and the characteristic such as non-linear.
(2) technical scheme
For achieving the above object, the invention provides a kind of lower range high sensitivity MEMS pressure transducer, comprising: the back side has the monocrystalline silicon layer 1 of cavity; Be formed at the porous silicon/silicon structure of composite membrane 6 in this monocrystalline silicon layer 1 back side cavity; Be formed at the porous silicon voltage dependent resistor (VDR) 7 in this monocrystalline silicon layer 1 front; And the metal level 8 as metal interconnection of deposit in this porous silicon voltage dependent resistor (VDR) 7.
In such scheme, the cavity at described monocrystalline silicon layer 1 back side, its shape is flat membrane structure, single island membrane structure, twin islet membrane structure or archipelago membrane structure.Island structure 9 in described single island membrane structure, twin islet membrane structure or archipelago membrane structure is square island, rectangle island or circular islands structure.
In such scheme, described porous silicon/silicon structure of composite membrane 6 comprises the silicon of cavity itself and the porous silicon film of silicon face growth, and wherein the thickness of porous silicon film is 1～50 μ m.
In such scheme, described porous silicon voltage dependent resistor (VDR) 7 is formed by the porous silicon film that is grown in this monocrystalline silicon layer 1 front, and this porous silicon film is distributed in the positive corresponding pressure-sensitive deformation of thin membrane maximum of this monocrystalline silicon layer 1.Described porous silicon voltage dependent resistor (VDR) 7 is voltage dependent resistor (VDR)s or forms Wheatstone bridge by 4 voltage dependent resistor (VDR)s.
In such scheme, described metal level 8 forms Ohmic contact with this porous silicon voltage dependent resistor (VDR) 7, and this Ohmic contact of formation is as extraction electrode.
For achieving the above object, the present invention also provides a kind of method of making lower range high sensitivity MEMS pressure transducer, comprising:
Choose two silicon substrates of throwing, be oxidized this silicon substrate and form silicon oxide layer at these silicon substrate tow sides;
Adopt low-pressure chemical vapor deposition method being formed with the silicon substrate tow sides deposition silicon nitride film of oxide layer;
At silicon chip back side, by lithographic definition mask window, utilize dry etching technology to etch away silicon nitride film and the silicon oxide layer in mask window region;
Method by dry etching or wet etching is carried out silicon corrosion to the silicon area exposing, and at silicon chip back side, forms curved cavity;
Adopt the wet etching method porous silicon film of growing in curved cavity;
At front side of silicon wafer, by lithographic definition porous silicon voltage dependent resistor (VDR) position, then utilize dry etching technology to etch away silicon nitride film and the silicon oxide layer of window area;
Adopt wet etching method at front side of silicon wafer, to expose the region growing porous silicon film of silicon, form porous silicon voltage dependent resistor (VDR);
Adopt dry etching or wet etching method to remove silicon nitride film and the silicon oxide layer at front side of silicon wafer and the back side;
At front side of silicon wafer depositing metal Al, by photoetching and wet etching Al technology, form front surface A l electrode interconnection figure; And
Utilize quick anneal oven, by controlling annealing temperature and time, in porous silicon voltage dependent resistor (VDR), form Ohmic contact.
In such scheme, described employing wet etching method is grown in the step of porous silicon film in curved cavity, is by regulating corrosive liquid ratio, corrosion temperature and etching time to control thickness and the porosity of porous silicon film.
In such scheme, the region growing porous silicon film that described employing wet etching method exposes silicon at front side of silicon wafer forms in the step of porous silicon voltage dependent resistor (VDR), is by regulating corrosive liquid ratio, corrosion temperature and etching time to control thickness and the porosity of porous silicon layer.
(3) beneficial effect
Lower range high sensitivity MEMS pressure transducer based on two-sided porous silica material provided by the invention and preparation method thereof, porous silica material is applied in MEMS pressure transducer, when guaranteeing the device linearity, further improve on the one hand sensitivity, range can be extended to low pressure or ultralow pressure field on the other hand.Porous silicon MEMS pressure transducer technique simple Devices low cost of manufacture, can compatibility be easy to realize mass with silica-based technique simultaneously.Low pressure sensor has a wide range of applications in fields such as biomedicine, space exploration, semiconductor machining and measurements, so the present invention will produce considerable economic and social benefit.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, below in conjunction with embodiment and accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is the schematic diagram according to the low-quantum pressure sensor based on two-sided porous silica material of first embodiment of the invention;
Fig. 2 is the schematic diagram according to the low-quantum pressure sensor based on two-sided porous silica material of second embodiment of the invention;
Fig. 3 is the schematic diagram according to the low-quantum pressure sensor based on two-sided porous silica material of third embodiment of the invention;
Fig. 4-1, to Fig. 4-9th, makes the process chart of the low-quantum pressure sensor based on two-sided porous silica material of first embodiment of the invention.
Fig. 5 forms the vertical view that four voltage dependent resistor (VDR)s form Wheatstone bridge in Fig. 4-7;
Fig. 6 is the vertical view that forms metal interconnection in Fig. 4-9.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Refer to shown in Fig. 1-Fig. 3, the invention provides a kind of porous silicon lower range MEMS pressure sensor structure, comprising:
The back side has the monocrystalline silicon layer 1 of cavity, described cavity shapes can be flat membrane structure (as Fig. 1), single island membrane structure (as Fig. 2), twin islet membrane structure (as Fig. 3) or archipelago membrane structure (not shown), described island structure 9 can be square island, rectangle island or circular islands structure;
Be formed at the porous silicon/silicon structure of composite membrane 6 in this monocrystalline silicon layer 1 back side cavity, this porous silicon/silicon structure of composite membrane 6 comprises the silicon of cavity itself and the porous silicon film of silicon face growth, wherein the thickness of porous silicon film can be 1～50um, cover film district only, also can whole cover film and region, island, respectively as Figure 1-3;
Be formed at the porous silicon voltage dependent resistor (VDR) 7 in this monocrystalline silicon layer 1 front, this porous silicon voltage dependent resistor (VDR) 7 is formed by the porous silicon film that is grown in this monocrystalline silicon layer 1 front, can be a voltage dependent resistor (VDR) or the form that consists of Wheatstone bridge 4 voltage dependent resistor (VDR)s; This porous silicon film is distributed in the deformation sensitive district of the positive pressure-sensitive film of this monocrystalline silicon layer 1, is distributed in the positive corresponding pressure-sensitive deformation of thin membrane maximum of this monocrystalline silicon layer 1;
The metal level 8 as metal interconnection of deposit in this porous silicon voltage dependent resistor (VDR) 7, this metal level 8 forms Ohmic contact with this porous silicon voltage dependent resistor (VDR) 7, and this Ohmic contact of formation is as extraction electrode.
Embodiments of the present invention are generally in the structure and technique basis of silicon MEMS pressure transducer, construct overleaf the composite membrane of porous silicon/silicon as the pressure-sensitive structure of pressure transducer, in front, prepare porous silicon voltage dependent resistor (VDR) and draw and obtain exporting because pressure changes the electrical signal causing by electricity.Mechanical property and pressure drag performance that this silicon MEMS pressure transducer based on two-sided porous silica material has fully utilized porous silica material excellence, realize the high sensitivity MEMS pressure sensor chip that is applied to lower range scope.
Embodiment
As Fig. 1 structure embodiment, in conjunction with if Fig. 4-1 is to the technological process as described in Fig. 4-9, specific as follows:
(1) as shown in Fig. 4-1, choose two silicon substrates 1 of throwing, carry out high-temperature oxydation, at silicon substrate tow sides, form silicon oxide layer 2.
(2) as shown in Fig. 4-2, adopt low-pressure chemical vapor deposition (LPCVD) method at the above-mentioned silicon substrate 1 tow sides deposition silicon nitride film 3 with oxide layer 2, the ratio in Si source and N source during by reasonable adjusting reaction, realizes low stress and erosion-resisting silicon nitride (SiNx) layer.
(3), as shown in Fig. 4-3, at silicon chip back side, by lithographic definition mask window, utilize dry etching technology to etch away silicon nitride film 3 and the silicon oxide layer 2 of window area.
(4) as shown in Fig. 4-4, by the method for dry etching or wet etching, the silicon area exposing is carried out to silicon corrosion, according to the thickness requirement of diaphragm, control the degree of depth of corrosion, at silicon chip back side, form curved cavity.
(5), as shown in Fig. 4-5, adopt the wet etching method porous silicon film 6 of growing in silicon chip curved cavity, by regulating the parameters such as corrosive liquid ratio, corrosion temperature and etching time to control thickness and the porosity of porous silicon.
(6) as Figure 4-Figure 6, at front side of silicon wafer, by lithographic definition porous silicon voltage dependent resistor (VDR) position, then utilize dry etching technology to etch away silicon nitride layer and the silicon oxide masking film layer of window area.
(7) as shown in Fig. 4-7, adopt wet etching method at front side of silicon wafer, to expose the region growing porous silicon film of silicon, by regulating the parameters such as corrosive liquid ratio, corrosion temperature and etching time, control thickness and the porosity of porous silicon layer, form porous silicon voltage dependent resistor (VDR) 7, four voltage dependent resistor (VDR)s form Wheatstone bridge, and its vertical view as shown in Figure 5.
(8) as Figure 4-8, adopt dry etching or wet etching method to remove silicon nitride (SiNx) layer and the silicon oxide masking film layer at front side of silicon wafer and the back side.
(9) as shown in Fig. 4-9, at front side of silicon wafer depositing metal Al, by photoetching and wet etching Al technology, form front surface A l electrode interconnection figure, its vertical view is as shown in Figure 6.
(10) utilize quick anneal oven, by controlling annealing temperature and time, in porous silicon voltage dependent resistor (VDR), form Ohmic contact.
Film formed single island film as compound in porous silicon/silicon of Fig. 2 and Fig. 3 and archipelago membrane structure, from device one-piece construction, its typical process flow and embodiment described above are similar, slightly different during the preparation on Jin island, just repeat no more here.
Above-described specific embodiment, has carried out further detailed description to object of the present invention and technical scheme.Institute is understood that, the foregoing is only specific embodiment of the invention, be not limited to the present invention, actually can carry out flexible design device architecture according to performance requirement, adopt the compatible technology of silicon and porous silicon to produce multiple porous silicon MEMS pressure transducer.Within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a lower range high sensitivity MEMS pressure transducer, is characterized in that, comprising:
The back side has the monocrystalline silicon layer (1) of cavity;
Be formed at the porous silicon/silicon structure of composite membrane (6) in the cavity of this monocrystalline silicon layer (1) back side;
Be formed at the positive porous silicon voltage dependent resistor (VDR) (7) of this monocrystalline silicon layer (1); And
The metal level as metal interconnection (8) in the upper deposit of this porous silicon voltage dependent resistor (VDR) (7).
2. lower range high sensitivity MEMS pressure transducer according to claim 1, is characterized in that, the cavity at described monocrystalline silicon layer (1) back side, and its shape is flat membrane structure, single island membrane structure, twin islet membrane structure or archipelago membrane structure.
3. lower range high sensitivity MEMS pressure transducer according to claim 2, is characterized in that, the island structure (9) in described single island membrane structure, twin islet membrane structure or archipelago membrane structure is square island, rectangle island or circular islands structure.
4. lower range high sensitivity MEMS pressure transducer according to claim 1, it is characterized in that, described porous silicon/silicon structure of composite membrane (6) comprises the silicon of cavity itself and the porous silicon film of silicon face growth, and wherein the thickness of porous silicon film is 1～50 μ m.
5. lower range high sensitivity MEMS pressure transducer according to claim 1, it is characterized in that, described porous silicon voltage dependent resistor (VDR) (7) forms by being grown in the positive porous silicon film of this monocrystalline silicon layer (1), and this porous silicon film is distributed in the positive corresponding pressure-sensitive deformation of thin membrane maximum of this monocrystalline silicon layer (1).
6. lower range high sensitivity MEMS pressure transducer according to claim 5, is characterized in that, described porous silicon voltage dependent resistor (VDR) (7) is a voltage dependent resistor (VDR) or forms Wheatstone bridge by 4 voltage dependent resistor (VDR)s.
7. lower range high sensitivity MEMS pressure transducer according to claim 1, is characterized in that, described metal level (8) forms Ohmic contact with this porous silicon voltage dependent resistor (VDR) (7), and this Ohmic contact of formation is as extraction electrode.
8. a method of making the lower range high sensitivity MEMS pressure transducer described in any one in claim 1 to 7, is characterized in that, comprising:
Choose two silicon substrates of throwing, be oxidized this silicon substrate and form silicon oxide layer at these silicon substrate tow sides;
Adopt low-pressure chemical vapor deposition method being formed with the silicon substrate tow sides deposition silicon nitride film of oxide layer;
At silicon chip back side, by lithographic definition mask window, utilize dry etching technology to etch away silicon nitride film and the silicon oxide layer in mask window region;
Method by dry etching or wet etching is carried out silicon corrosion to the silicon area exposing, and at silicon chip back side, forms curved cavity;
Adopt the wet etching method porous silicon film of growing in curved cavity;
At front side of silicon wafer, by lithographic definition porous silicon voltage dependent resistor (VDR) position, then utilize dry etching technology to etch away silicon nitride film and the silicon oxide layer of window area;
Adopt wet etching method at front side of silicon wafer, to expose the region growing porous silicon film of silicon, form porous silicon voltage dependent resistor (VDR);
Adopt dry etching or wet etching method to remove silicon nitride film and the silicon oxide layer at front side of silicon wafer and the back side;
At front side of silicon wafer depositing metal Al, by photoetching and wet etching Al technology, form front surface A l electrode interconnection figure; And
Utilize quick anneal oven, by controlling annealing temperature and time, in porous silicon voltage dependent resistor (VDR), form Ohmic contact.
9. the method for making lower range high sensitivity MEMS pressure transducer according to claim 8, it is characterized in that, described employing wet etching method is grown in the step of porous silicon film in curved cavity, is by regulating corrosive liquid ratio, corrosion temperature and etching time to control thickness and the porosity of porous silicon film.
10. the method for making lower range high sensitivity MEMS pressure transducer according to claim 8, it is characterized in that, the region growing porous silicon film that described employing wet etching method exposes silicon at front side of silicon wafer forms in the step of porous silicon voltage dependent resistor (VDR), is by regulating corrosive liquid ratio, corrosion temperature and etching time to control thickness and the porosity of porous silicon layer.
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Cited By (7)
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| CN105698982A (en) * | 2016-01-31 | 2016-06-22 | 河海大学 | Intelligent sensitivity regulation sensor and test method thereof |
| CN107941409A (en) * | 2017-10-19 | 2018-04-20 | 南京大学 | A kind of resistance-type gas pressure gauge based on nano particle dot array |
| CN109387235A (en) * | 2018-11-16 | 2019-02-26 | 电子科技大学中山学院 | Flexible touch sensor array based on film bulk acoustic wave resonator |
| CN109642841A (en) * | 2016-08-25 | 2019-04-16 | 株式会社电装 | Pressure sensor |
| CN111664972A (en) * | 2020-06-05 | 2020-09-15 | 苏州纳芯微电子股份有限公司 | MEMS pressure sensor and preparation method thereof |
| CN114295262A (en) * | 2021-12-07 | 2022-04-08 | 华东光电集成器件研究所 | Island membrane structure silicon piezoresistive sensor device |
| CN114414110A (en) * | 2022-01-27 | 2022-04-29 | 无锡胜脉电子有限公司 | Micro-pressure MEMS pressure sensor chip and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105698982A (en) * | 2016-01-31 | 2016-06-22 | 河海大学 | Intelligent sensitivity regulation sensor and test method thereof |
| CN105698982B (en) * | 2016-01-31 | 2018-03-06 | 河海大学 | The sensor and its method of testing of Intelligent adjustment susceptibility |
| CN109642841A (en) * | 2016-08-25 | 2019-04-16 | 株式会社电装 | Pressure sensor |
| CN109642841B (en) * | 2016-08-25 | 2021-06-01 | 株式会社电装 | Pressure sensor |
| CN107941409A (en) * | 2017-10-19 | 2018-04-20 | 南京大学 | A kind of resistance-type gas pressure gauge based on nano particle dot array |
| CN109387235A (en) * | 2018-11-16 | 2019-02-26 | 电子科技大学中山学院 | Flexible touch sensor array based on film bulk acoustic wave resonator |
| CN109387235B (en) * | 2018-11-16 | 2021-07-13 | 电子科技大学中山学院 | Flexible touch sensor array based on film bulk acoustic wave resonator |
| CN111664972A (en) * | 2020-06-05 | 2020-09-15 | 苏州纳芯微电子股份有限公司 | MEMS pressure sensor and preparation method thereof |
| CN114295262A (en) * | 2021-12-07 | 2022-04-08 | 华东光电集成器件研究所 | Island membrane structure silicon piezoresistive sensor device |
| CN114414110A (en) * | 2022-01-27 | 2022-04-29 | 无锡胜脉电子有限公司 | Micro-pressure MEMS pressure sensor chip and preparation method thereof |
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Application publication date: 20140319 |