CN101922984B - Nano-silicon thin-membrane four-island-beam-membrane sensor chip and preparation method thereof - Google Patents
Nano-silicon thin-membrane four-island-beam-membrane sensor chip and preparation method thereof Download PDFInfo
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Abstract
The invention relates to an ultra-micro pressure sensor, in particular to a nano-silicon thin-membrane four-island-beam-membrane sensor chip and a preparation method thereof. The sensor chip is square, monocrystalline silicon is adopted as a chip material, and nano-silicon is taken as a sensitive thin resistance material; the effective area of the chip is square, the back surface consists of four big islands and four small islands, and the small islands are positioned on the big islands; and the front surface of the effective chip area consists of a central beam, two edge beams, two flat membrane areas and two beam membrane areas, and resistors made of the nano-silicon material are arranged on the central beam and the edge beams. The sensor chip utilizes the advantages of a double-island beam membrane and combines the islands with the beams, thereby playing the effect of secondary stress concentration and improving the sensitivity and the linearity of a sensor; and the four resistors are respectively placed on the central beam and the edge beams, thereby transforming the stress of the resistors to the change of the resistance. The resistance change at the middle and the edges has the equal size and the reverse symbols, and the ultra-micro pressure measurement is realized by adopting the excitation of a constant current source through a Wheatstone bridge.
Description
Technical field
The present invention relates to the ultra micro pressure transducer, refer in particular to Nano thin film four islands-beam-film sensors chip and preparation method thereof.
Background technology
Along with rapid development of science and technology, the measuring technology of pressure is applied to technical fields such as space flight, aviation, communications and transportation, metallurgy, machine-building, petrochemical industry, light industry, technical supervision and test more and more widely.All to the measurement proposition active demand of the little pressure of ultra micro, therefore studying the ultra micro pressure transducer can significant and obvious value at aspects such as industrial automatic control, environmental protection equipment and Medical Instruments.
The high performance pressure sensor 80% above dependence on import that present above-mentioned industry is used has been spent a large amount of foreign exchanges of country every year.The present invention seeks to research and develop 0～100Pa, 0～250Pa, 0～500Pa series range, the ultra micro pressure pressure sensor with high sensitivity, high reliability and high stability is to satisfy domestic pressing for high performance pressure sensor.
Moment sensor generally adopts single crystal silicon material and polycrystalline silicon material to process, and this material can cause the variation of silicon crystal lattice constant under external force, thereby its resistance is changed, and reaches the measurement to the external pressure size through detecting changes in resistance.But this material has certain limitation in the measurement to ultra micro pressure, and feasible measurement to littler pressure becomes difficult.
Structurally the most frequently used have flat film, island film, a beam diaphragm structure, but since limitation separately be difficult to realize to the ultra micro pressure survey.At present state-of-the-art is that structure is that flat film, island film and beam film are combined, and the twin islet-beam of proposition-membrane structure can be realized the minute-pressure force measurement to a certain extent, the sensitivity and the linearity that can corresponding raising sensor.Its measurement range of present this structure only is 300Pa, is difficult to more small pressure is measured.
Four islands-beam-film sensors chip structure has been proposed to our novelty; This kind sensor construction has utilized the advantage of twin islet-beam-membrane structure; Improved simultaneously the sensitivity and the anti-overload ability of sensor again further, can realize measurement the pressure about 100Pa.
Nano thin film is a kind of silicon thin film material of novel structure, respectively accounts for half a large amount of nanometer-size dies and interface by volume fraction and forms.Silicon atom in grained region has higher periodicity, is similar to mono-crystalline structures, but the Si atom of interface zone is the long-range randomness, and structure is comparatively loose, has big flexible.When external force acts on film; Significant relaxation process can take place in interface zone, has changed the transport path of tunnelling electronics, causes the variation of tunnelling electron amount and energy; Thereby changed the resistance sizes of film itself, this is the main source of Nano thin film piezoresistive effect.Experimental verification; When 40%＜* during c＜60%; Bigger variation takes place in the pressure sensitivity coefficient, and experimental study finds that the pressure sensitivity coefficient can reach 130 when * c ≈ 52%, is monocrystalline silicon and polysilicon membrane piezoresistance coefficient 6～8 times; Adopt the sensitive element of Nano thin film, for design high sensitivity ultra micro pressure pressure sensor provides direction as sensor.
Summary of the invention
The structure and the preparation method that the purpose of this invention is to provide a kind of ultra micro pressure transducer; Promptly adopt a kind of new pressure sensor chip structure (chip structure of four islands-beam-film), and utilize Nano thin film to prepare pressure transducer as the sensitive membrane of pressure transducer.On monocrystalline substrate, utilize and strengthen plasma chemical sedimentation (PECVD) growth high-quality Nano thin film as the quick layer of power; Combine with bulk silicon process; Make high sensitivity pressure resistance type micro pressure sensor chip; Through unstressed packaging technology, develop the ultra micro pressure transducer of high sensitivity, high reliability and high stability characteristics.
Said Nano thin film four islands-beam-film sensors chip is a square, adopts monocrystalline silicon as chip material, and nano-silicon is as quick thin resistance material; The chip effective coverage is a square, and its back side is made up of 4 big islands and 4 islands, and island is positioned on the big island; Effectively the front of chip area is made up of 1 central beam, 2 edge girders, 2 flat diaphragm areas and 2 beam diaphragm areas; The center of intermediate beam is positioned at the central authorities of chip front side; Beam film district center and chip center and are symmetrically distributed about chip center on a horizontal linear; 2 edge girder centers and chip center are positioned at the outer end of Liang Moqu on same horizontal linear; The flat diaphragm zone is positioned at the chip effective coverage outside beam diaphragm, intermediate beam and the edge girder, and big island and island are symmetrically distributed in the back side of beam diaphragm area, and intermediate beam and edge girder are provided with the resistance that nano silicon material is made.
The present invention proposes four islands-beam-film chip sensor structure; Four islands are at the back side of silicon fiml Liang Moqu, and this structure had both been utilized the advantage of twin islet beam film, and the island combines with beam; Played the effect that secondary stress is concentrated; Four islands are at the back side in silicon fiml thick beam district, and have one traversing four silicon island and silicon fiml is divided into symmetrical two-part silicon beam in the silicon fiml front, force sensing resistance is arranged between island, the island and the silicon beam on island, border on; Play the effect that the stress secondary is concentrated, improved the sensitivity and the linearity of sensor.
Simultaneously the total area on four islands is smaller again, when chip and bottom glass bonding, can reduce absorption affinity further like this, further improves anti-overload ability.And the stress distribution of four islands-beam-film chip structure is better than twin islet structural symmetry; Four resistance are placed on respectively on intermediate beam and the edge girder; Resistance receives compressive stress on the intermediate beam, and resistance receives tension on the edge girder, and its stress value size is almost equal; And opposite in sign is converted into stress through force sensing resistance the variation of resistance.Resistance variations equal and opposite in direction, the opposite in sign at centre and edge through Wheatstone bridge, adopt the constant current source excitation, can realize the maximum output of voltage, and realization is to the measurement of ultra micro pressure.
The concrete structure parameter is descended said:
Realize that technical scheme of the present invention is:
(1) chip structure:
Following size is all pressed: the description in proper order of lateral dimension * longitudinal size * thickness.
(1) the chip size scope can: lateral dimension 3mm～6mm, longitudinal size are 3～6mm, thickness 200～300 μ m; Preferred 4mm * 4mm * 258 μ m.
(2) chip effective coverage range of size can: lateral dimension 2.5mm～4mm, longitudinal size are 2.5mm～4mm, thickness 8～15 μ m; Preferred 3mm * 3mm * 10 μ m.
(3) back corrosion depth capacity can be at 200～300 μ m, preferred 230 μ m.
(4) intermediate beam is a rectangle, and its range of size can be at lateral dimension 150 μ m～200 μ m, longitudinal size 100～160 μ m, thickness 10 μ m～20 μ m; Preferred 180 μ m * 136 μ m * 18 μ m.The center of intermediate beam is positioned at the centre of chip upper surface.
(5) edge girder is a rectangle, range of size can: lateral dimension 150 μ m～200 μ m, longitudinal size are 50～80 μ m, thickness 10 μ m～20 μ m; Preferred 180 μ m * 68 μ m * 18 μ m.Two edge girder centers and chip center and can be in 1.3mm～1.7mm scopes apart from the distance of chip center's point on same horizontal linear; Preferred 1.46mm, the two edges beam is symmetrically distributed about chip center.
(6) big island be square, its range of size can: lateral dimension 200 μ m～400 μ m, longitudinal size are 200～400 μ m, thickness 50 μ m～100 μ m; Be preferably 300 μ m * 300 μ m * 80 μ m.
(7) island be the square, range of size can: lateral dimension 150 μ m～250 μ m, longitudinal size are 150～250 μ m, thickness 10 μ m～30 μ m; Be preferably 200 μ m * 200 μ m * 20 μ m.
(8) getting chip center is true origin, and the absolute value scope of the centre coordinate on then big island (island) is: lateral dimension can be at 0.6mm～0.8mm, and longitudinal size can be at 0.3mm～0.5mm; Preferred coordinate is respectively
(0.75mm，0.47mm)、(-0.75mm，0.47mm)、(-0.75mm，-0.47mm)、(0.75mm，-0.47mm)。
(9) Liang Moqu is a rectangle, and range of size can be at lateral dimension 1.5mm～2mm, and longitudinal size is 1mm～1.5mm, thickness 10 μ m～20 μ m; Preferred 1.68mm * 1.36mm * 18 μ m.Beam film district center and chip center can be within 1.2mm～1.8mm apart from the distance of chip center on a horizontal linear, preferred 0.74mm, and two beam diaphragm areas are symmetrically distributed about chip center.
(10) the flat diaphragm regional location is positioned at the chip effective coverage outside beam diaphragm, intermediate beam and the edge girder.
(11) curved two foldings of resistance are U-shaped.Termination size range of size can be at lateral dimension 20 μ m～30 μ m, longitudinal size 20 μ m～30 μ m; Preferred size 40 μ m * 40 μ m.Its range of size of corner can be at lateral dimension 60 μ m～80 μ m, longitudinal size 15 μ m～25 μ m; Preferred size 70 μ m * 20 μ m.Resistance bar overall length dimension scope can be at 100 μ m～150 μ m; Preferred size is 120 μ m.The resistor stripe figure is seen shown in the accompanying drawing.
Back of the body island forms and is to use the anisotropic wet corrosion to realize because of anisotropic etch is very big to the corrosion speed difference of the different crystal faces of silicon, having good directional selectivity.Silicon fiml adopts (100) crystal face, and frame all is (111) crystal face with back of the body Da Dao side, and angle is 54.74 °.Chip structure accompanying drawing 1,2, shown in 3.
Table 1 stress is with the variation of working pressure
Table 2 large deflection is with the variation of overload pressure
Description of drawings
Four islands among Fig. 1 embodiment-beam-membrane structure synoptic diagram.
Fig. 2 four islands-beam-membrane structure structure figure.
Fig. 3 four islands-beam-membrane structure Facad structure figure.
The planform of Fig. 4 resistance.
Fig. 5 four islands-beam-membrane structure stress finds that along path profile figure this structural stress distributes very symmetrically and evenly.
Fig. 6 stress in the pressure of 500Pa, finds that the linearity of its work is very good with the variation of working pressure.
Fig. 7 maximum defluxion under the effect of working pressure, finds that the linearity of work is still good with the variation of working pressure.
Fig. 8 amount of deflection under the effect of overload pressure, finds that its linearity is good with the variation of overload pressure.
Fig. 9 amount of deflection is with the variation of frequency of operation, under the dynamic duty effect, 4.8 * 10
5The Hz frequency is issued to resonance, the maximum 0.14 μ m that is deformed into, and distortion is much smaller than chip thickness, and distortion can be ignored, and working stability is reliable.
Table 1 stress is with the variation of working pressure, and central stress, edge stress and amount of deflection all demonstrate the trend of linear change with the variation of working pressure.
Table 2 large deflection is with the variation of overload pressure, and amount of deflection all demonstrates the trend of linear change with the variation of overload pressure.
1 resistance; 2 big islands; 3 islands; 4 edge girders; 5 beam diaphragm areas; 6 flat diaphragm areas; 7 intermediate beams; 8 resistance turnings; 9 resistance terminations; 10 meridional stresses; 11 stress differences in length and breadth; 12 transverse stresses.
This structure both can make that diaphragm thickness is corresponding reduces to very thin, can make the non-linear unlikely increase of structure simultaneously again, realized the effective measurement to ultra micro pressure, and when overload capacity reached 30 times of target range, its linearity was still good.Like this, the sensitivity of sensor can be very high, and the relative diaphragm thickness of midplane generation tensile deformation of film is very little simultaneously, has promptly avoided the generation of " balloon effect ", and nonlinearity erron has dropped to very little degree.
(2) chip manufacturing:
1, selects the monocrystalline silicon piece in n type (100) crystal orientation of twin polishing for use.
2, adopt thermal oxidation technology at the two-sided one deck SiO that respectively grows of silicon chip
2Layer.Dual surface lithography forms the double-sided alignment mark, guarantees that the front force sensing resistance can accurately be arranged in stress area.
3, the photoetching corrosion of big film of the back of the body and positive Liang Qu forms effective spacing distance between island and bonding glass.
4, remove oxide layer, thermal oxide prepares SiO once more
2Layer.
5, utilize PECVD at the double-sided deposition silicon nitride film.
6, utilize the PECVD technology at chip front side deposition boron-doped nanometer silicon thin film.
7, photoetching resistor stripe forms force sensing resistance bar figure.
8, front evaporation of aluminum is made aluminum lead.
9, utilize PECVD at the double-sided deposition silicon nitride layer.
10, back of the body island photoetching corrosion.
11, the positive aluminum lead hole that makes.
12, electrostatic bonding glass, encapsulation.
Adopt the four islands-beam-film chip sensor structure of such scheme preparation to be: to be followed successively by from the upper strata to bottom: Si
3N
4Layer, Al line, nc-Si:H film, Si
3N
4Layer, SiO
2Layer, n type (100) crystal face monocrystalline silicon, Si
3N
4Layer, SiO
2Layer, substrate of glass.
Advantage of the present invention is to adopt novel chip structure (four islands-beam-membrane structure), and utilizes the high piezoresistive effect of nano-silicon, develops highly sensitive pressure transducer.
Embodiment
Instance: the preparation of sensor chip
Select the monocrystalline silicon piece in n type (100) crystal orientation of twin polishing for use, thickness is 200 ± 10 μ m, and resistivity is 5～8 Ω cm, and the chip fabrication technique flow process is following:
1, thermal oxide
Adopt to do-wet-dry oxidation technology is the oxide layer of 100nm at the silicon chip upper and lower surfaces layer thickness of respectively growing.1150 ℃ of oxidizing temperatures, dried oxygen 10 minutes, water flowing steam wet oxygen 30 minutes, dried again oxygen 10 minutes.
2, dual surface lithography alignment mark
To the silicon chip dual surface lithography after the oxidation, form the double-sided alignment mark.Elder generation's backsizing, 80 ℃ of pre-bake temperatures, the time is 8 minutes, front gluing then, 80 ℃ of pre-bake temperatures, the time is 15 minutes.Make public, develop, etch alignment mark.(, guarantee that front force sensing resistance bar can accurately be arranged in stress area at lithography alignment figure of two-sided while of silicon chip.
3, secondary oxidation
Utilize to do once more-wet-dry oxidation technology is in the silicon chip upper and lower surfaces oxide layer of a layer thickness for 100nm of respectively growing.1150 ℃ of oxidizing temperatures, dried oxygen 10 minutes, water flowing steam wet oxygen 30 minutes, dried again oxygen 10 minutes.
4, big film is carried on the back in photoetching, the positive Liang Qu of photoetching.
5, big film of the back of the body and front beam district etching
Hydrofluorite with 10% (HF) is left etching window, is corrosion 60 minutes among 25% the TMAH in concentration, and temperature is 60 ℃.
6, rinsing SiO
2
Utilize 10% HF solution corrosion to remove the oxide layer of front and back.
7, prepare oxide layer once more:
Utilize to do-wet-dry oxidation technology is in respectively the grow oxide layer of a layer thickness 150nm of silicon chip upper and lower surfaces.
1150 ℃ of oxidizing temperatures, dried oxygen 10 minutes, water flowing steam wet oxygen 45 minutes, dried again oxygen 10 minutes.
8, utilize plasma activated chemical vapour deposition (PECVD) at the thick silicon nitride film microwave energy 3200W of front growth 10nm, ammonia flow 1600sccm, silane flow rate 450sccm, 400 ℃ of depositing temperatures, operating pressure 0.27mbar.
9, utilize the PECVD technology at the positive deposition of silicon chip boron-doping hydrogenated nano-crystalline silicon thin films, thickness is 1 μ m, as the force sensing resistance strip material.
Mode of deposition: base vacuum is 1 * 10
-4Pa, rf frequency are 13.56MHz, and radio-frequency power is at 150W, and depositing temperature is at 250 ℃, Dc bias 100V.The dilution ratio ([SiH of silane
4]/[SiH
4+ H
2]) be 5%, the dilution ratio [B of borine
2H
6]/[B
2H
6+ H
2] be 0.5%.Silane flow rate 70sccm, hydrogen flowing quantity 30sccm, borine flow 5sccm.
10, annealing
The boron-doped nanometer silicon thin film is annealed under hydrogen, and annealing temperature is T=450 ℃, annealing time 20min
11, photoetching corrosion nc-Si:H sheet resistance bar
The boron-doped nanometer silicon thin film is carried out photoetching, and the Nano thin film of KOH corrosive liquid after to photoetching corrodes, and forms the force sensing resistance bar.
12, utilize lift-off technology to form the aluminium line
Concrete technology: resist coating, make the aluminium connecting line construction by lithography, do mask with photoresist, splash-proofing sputtering metal aluminium forms the aluminium line behind the removal photoresist.
13, utilize PECVD pros and cons deposited silicon nitride 150nm.
Microwave energy 3200W, ammonia flow 1600sccm, silane flow rate 450sccm, 400 ℃ of depositing temperatures, operating pressure 0.27mbar.
14, front protecting, photoetching back of the body island is carried on the back big island
Front protecting: front gluing at first, pre-bake temperature 80,15 minutes time kind, post bake 130,30 minutes.Be coated with one deck photoresist again, pre-bake temperature 80,15 minutes time kind, post bake 130,30 minutes.Black wax with fusion is bonded at the silicon chip front on the quartz plate then, plays the positive effect of protection.
The reverse side gluing, photoetching back of the body island: utilize the oxygen plasma etch silicon nitride, 10%HF etching oxidation silicon, the KOH solution corrosion corrodes 10 μ m and forms the little island structure of the required back of the body.
Remove photoresist, big island is carried on the back in photoetching: utilize the silicon nitride at the oxygen plasma dry etching back side, then remove monox, utilize the 40%KOH solution corrosion then with 10%HF, and 50 ℃ of corrosion temperatures, corrosion is until silicon film thickness 10 μ m.
15, with silicon chip from piezoid, be placed in ether and the xylene black wax of cleaning silicon chip surface, remove photoresist with plasma method, remove the positive photoresist of silicon chip.
16, the entire chip structure is accomplished in bonding encapsulation.
Claims (10)
1. Nano thin film four islands-beam-film sensors chip is characterized in that: said Nano thin film four islands-beam-film sensors chip is square, adopts monocrystalline silicon as chip material, and nano-silicon is as quick thin resistance material; The chip effective coverage is a square, and its back side is made up of 4 big islands (2) and 4 islands (3), and island (3) is positioned on the big island (2); The front of chip effective coverage is made up of 1 intermediate beam (7), 2 edge girders (4), 2 flat diaphragm areas (5) and 2 beam diaphragm areas (6); The center of intermediate beam (7) is positioned at the central authorities of chip front side; Beam diaphragm area (6) center and chip center and are symmetrically distributed about chip center on a horizontal linear; 2 edge girder (4) centers and chip center are positioned at the outer end of beam diaphragm area (6) on same horizontal linear; Flat diaphragm area (5) is positioned at the chip effective coverage outside beam diaphragm area (6), intermediate beam (7) and the edge girder (4); Big island (2) and island (3) are symmetrically distributed in the back side of beam diaphragm area (6), and intermediate beam (7) and edge girder (4) are provided with the resistance (1) that nano silicon material is made.
2. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: said chip size scope is: lateral dimension 3mm～6mm, longitudinal size are 3～6mm, thickness 200～300 μ m; The range of size of said chip effective coverage is: lateral dimension 2.5mm～4mm, longitudinal size are 2.5mm～4mm, thickness 8～15 μ m.
3. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: back corrosion depth capacity can be at 200～300 μ m.
4. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: said intermediate beam is a rectangle, and its range of size is: lateral dimension 150 μ m～200 μ m, longitudinal size 100～160 μ m, thickness 10 μ m～20 μ m.
5. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip; It is characterized in that: said edge girder is a rectangle; Range of size can be at lateral dimension 150 μ m～200 μ m; Longitudinal size is 50～80 μ m, thickness 10 μ m～20 μ m, and the distance of two edge girder center position chip center is in 1.3mm～1.7mm scope.
6. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: said big island is square, and its range of size is: lateral dimension 200 μ m～400 μ m, longitudinal size are 200～400 μ m, thickness 50 μ m～100 μ m; Island is a square, and range of size is: lateral dimension 150 μ m～250 μ m, longitudinal size are 150～250 μ m, thickness 10 μ m～30 μ m; Getting chip center is true origin, and the absolute value scope of the centre coordinate of then big island and island is: lateral dimension is 0.6mm～0.8mm, and longitudinal size can be at 0.3mm～0.5mm.
7. Nano thin film as claimed in claim 6 four islands-beam-film sensors chip; It is characterized in that: the centre coordinate of said big island and island for (0.75mm, 0.47mm), (0.75mm, 0.47mm), (0.75mm;-0.47mm), (0.75mm ,-0.47mm).
8. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: said beam diaphragm area is a rectangle, and range of size is: lateral dimension 1.5mm～2mm, longitudinal size are 1mm～1.5mm, thickness 10 μ m～20 μ m; The distance of beam diaphragm area centre distance chip center is 1.2mm～1.8mm.
9. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip is characterized in that: curved two foldings of resistance, be U-shaped, and the termination range of size is: lateral dimension 20 μ m～30 μ m, longitudinal size 20 μ m～30 μ m; Corner's range of size can be at lateral dimension 60 μ m～80 μ m, longitudinal size 15 μ m～25 μ m; Resistor stripe overall length dimension scope is 100 μ m～150 μ m.
10. Nano thin film as claimed in claim 1 four islands-beam-film sensors chip production method is characterized in that: said method comprising the steps of:
(1) selects the monocrystalline silicon piece in n type (100) crystal orientation of twin polishing for use;
(2) adopt thermal oxidation technology at the two-sided one deck SiO that respectively grows of monocrystalline silicon piece
2Layer, dual surface lithography forms the double-sided alignment mark, guarantees that front resistance can accurately be arranged in stress area;
(3) photoetching corrosion of big film of the back of the body and positive Liang Qu forms effective spacing distance between island and bonding glass;
(4) remove oxide layer, thermal oxide prepares SiO once more
2Layer;
(5) utilize PECVD at the double-sided deposition silicon nitride film;
(6) utilize the PECVD technology at chip front side deposition boron-doped nanometer silicon thin film;
(7) photoetching resistor stripe forms resistance pattern;
(8) front evaporation of aluminum is made aluminum lead;
(9) utilize PECVD at the double-sided deposition silicon nitride layer;
(10) back of the body island photoetching corrosion;
(11) the positive aluminum lead hole that makes;
(12) electrostatic bonding glass, encapsulation.
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| RU2463570C1 (en) * | 2011-05-17 | 2012-10-10 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Tensoresistive pressure sensor with thin-film nano- and micro-electromechanical system |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
| CN102636298B (en) * | 2012-03-16 | 2013-12-04 | 西安交通大学 | Beam-film four-land structured micro-pressure high-overload sensor chip |
| CN102944339A (en) * | 2012-10-22 | 2013-02-27 | 北京大学 | Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof |
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| CN111238714B (en) * | 2020-02-19 | 2021-12-07 | 黑龙江大学 | Manufacturing process method of micro-pressure sensor |
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| CN101108723A (en) * | 2007-06-27 | 2008-01-23 | 温州大学 | Method for manufacturing silicon chip of ultramicro tension pressure sensor |
| CN101271028A (en) * | 2008-04-18 | 2008-09-24 | 中国科学院上海微***与信息技术研究所 | Silicon pressure transducer chip and method based on silicon-silicon linking and silicon-on-insulating layer |
| CN101520350A (en) * | 2009-03-24 | 2009-09-02 | 无锡市纳微电子有限公司 | Process for manufacturing improved high-sensitivity low pressure sensor chip |
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| CN101922984A (en) | 2010-12-22 |
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