CN104864988B - MEMS pressure sensor of silicon island membrane structure and preparation method thereof - Google Patents
MEMS pressure sensor of silicon island membrane structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of MEMS pressure sensor of silicon island membrane structure and preparation method thereof, it is related to pressure sensor technique field.The present invention prepares pressure sensor using monolithic SOI materials, and chip size can accomplish millimeter magnitude, and compared with the silicon cup type pressure sensor of same size, the tube core number on wafer has the raising in an order of magnitude；Using the sensing modes of silicon island membrane structure, measurement sensitivity is improved；Preparation process is simple, sensor cost declines to a great extent；Using the second silicon layer thickness error of SOI materials it is small the characteristics of prepare sensing membrane, measurement sensitivity, precision are improved；Double mask etching modes avoid the problem for influenceing the photoresist of follow-up photoetching process not cover because forming big step after once etching, not only can Simplified flowsheet, also for high aspect ratio technique provides another solution；Additionally, the pressure drag of pressure sensor of the invention is formed on the insulating layer, the normal work under 300 DEG C of hot environments is ensure that.
Description
Technical field
The present invention relates to pressure sensor technique field, more particularly to a kind of silicon island membrane structure MEMS pressure sensor and
Its preparation method.
Background technology
MEMS silicon pressure sensors are a mostly important class sensors in current industrial production, are widely used in automobile work
The fields such as industry, aerospace industry, military affairs, health care.At present, the range of the silicon pressure sensor on domestic market mostly exists
The product of more than 10KPa, more lower range relies primarily on external import.
Piezoresistive pressure sensor is presently the most extensive class pressure sensor, using the good mechanical performance of silicon
And electric property, force sensing resistance is injected into sensitive thin film by the method for diffusion or ion implanting realizes pressure element
It is integrated with change-over circuit.Most important two performance parameter for evaluating and testing sensor is sensitivity and the linearity.For traditional C
Type structure of silicon cup formula pressure sensor, when the flat film of periphery fixed is as sensitive membrane, generally using thinning sensitive thin film thickness come
Improve its pressure-sensitive ability, while thinning sensitive thin film, the conversion of the pressure stresses of film surface cause it is non-linear also can be tight
Increase again, therefore, this flat membrane structure is not suitable for low-quantum pressure sensor, and the general scope of application is middle high range.As specially
Profit is entitled：Pressure sensor and preparation method thereof, publication number is CN103837289A, and publication date is on June 4th, 2014,
The pressure sensor includes being provided with the middle of one that the pressure sensor chip of the multilayer SOI materials preparation of cavity and two ends are provided with and lead
The face glass of through hole and one be used for Stress match back glass, by silica glass be bonded three layers are linked together, its system
The multilayer SOI material costs for making chip are expensive, and complex process is suitable for some special occasions and uses.
In order to solve this problem, it is necessary to reduce the thickness of sensitive thin film to improve sensitivity, this is just to the processing of device
Technique proposes requirement higher.Island membrane structure can obtain the sensitivity higher than flat membrane structure under identical thickness.Island
When the chip of membrane structure is pressurized, trench region of the stress meeting high concentration between island and edge, so that sensitivity is shown
Write and improve, and it can also realize overvoltage protection and non-linear interior compensation.Additionally, the frequency response in order to ensure pressure test is defeated
Go out, it is to avoid interference of the environmental factor to testing, measuring silicon island elevation is strictly controlled, generally less than 100 μm, but this structure
Preparation prepares the limitation of dry etching masking layer process due to receiving on high-aspect-ratio deep groove structure, mostly using anisotropic
Body silicon wet corrosion technique prepares island membrane structure, and this technique corrosion back cavity body sidewall can form the angle more than 90 ° with bottom, no
Beneficial to chip area is reduced, silicon chip utilization rate is reduced, this is also that island membrane structure pressure sensor development is restricted
Major reason.
The content of the invention
The technical problems to be solved by the invention are to provide MEMS pressure sensor and its making of a kind of silicon island membrane structure
Method, the characteristics of the sensor has measurement sensitivity high, high precision, ensure that the normal work under 300 DEG C of hot environments
Make, the characteristics of methods described has process is simple, low cost.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of MEMS pressure of silicon island membrane structure
Sensor, it is characterised in that：The sensor includes the second silicon layer, and the lower surface of second silicon layer is provided with silicon island membrane structure,
The upper surface of second silicon layer is provided with the 3rd insulating barrier, and the upper surface of the 3rd insulating barrier is provided with four pressure drags, four pressures
Resistance carries out interconnection and constitutes Wheatstone bridge by metal line, and the upper surface of the 3rd insulating barrier is provided with fairlead.
Further technical scheme is：The silicon island membrane structure includes spaced left silicon island membrane module, middle silicon
Island membrane module and right silicon island membrane module, left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module are from top to bottom the
Two insulating barriers and the first silicon layer, the left silicon island membrane module are identical with the structure of right silicon island membrane module, the left silicon island membrane module
With the thickness that the thickness of the first silicon layer on right silicon island membrane module is more than the first silicon layer on the membrane module of middle silicon island.
Further technical scheme is：Between the left silicon island membrane module and middle silicon island membrane module and middle silicon island
Interval is formed between membrane module and right silicon island membrane module, the pressure drag is relative with above-mentioned interval.
A kind of MEMS pressure sensor preparation method of silicon island membrane structure, it is characterised in that comprise the following steps：
1）In first insulating barrier of lower surface covering or formation of the first silicon layer, in the upper surface covering or formation of the first silicon layer
Second insulating barrier, in second silicon layer of upper surface covering or formation of the second insulating barrier, above multilayer material constitutes SOI materials；
2）In the 3rd insulating barrier of upper surface covering or formation of the second silicon layer；
3）In one layer of polysilicon membrane of upper surface covering or formation of the 3rd insulating barrier, and to the polysilicon membrane
The dense boron doping process of high dose is carried out, piezoresistance layer is formed；
4）One layer of photoresist is coated by way of spin coating in the pressure drag layer surface for being formed, and carries out photoetching process, to entering
Piezoresistance layer after row photoetching process carries out dry etch process, and four pressure drags are formed after removal photoresist；
5）Sputtered on pressure drag for connecting four metal levels of pressure drag, chemical gaseous phase is passed through in the upper surface of above-mentioned device
Sedimentation deposits passivation layer, for protection device；
6）Passivation layer is performed etching using photoetching process and etching technics, the terminal of etching is the upper table of the 3rd insulating barrier
Face, forms the fairlead of pressure drag, and the lead electrode of pressure drag is exposed；
7）Selective etch is carried out to the first insulating barrier, the first insulating barrier after etching is formed for etching silicon island membrane structure
The first mask layer；
8）The first surface of insulating layer after to selective etch carries out photoresist coating, and using photoetching process, being formed is used for
The second mask layer that the island membrane structure technique is etched when carrying out；
9）After the two-layer mask layer for etching silicon island membrane structure is formed, an etching technics, the depth of etching are carried out
It is the measuring silicon island elevation of the silicon island membrane structure to be formed, the second mask layer is removed after etching into set depth；
10）Another etching technics is carried out, etching depth is step 9）The remaining thickness of the first silicon layer after middle etching, directly
Stop etching to after being etched to the second insulating barrier, the part second then removed under remaining first insulating barrier and pressure drag is insulated
Layer, forms the silicon island membrane structure for pressure-bearing, ultimately forms pressure sensor.
Further technical scheme is：The step 2）In the 3rd insulating barrier pass through thermal oxide or chemical vapour deposition technique
It is deposited on the upper surface of the second silicon layer.
Further technical scheme is：The step 3）In utilize chemical vapor deposition in the upper surface of the 3rd insulating barrier
Method depositing polysilicon film, and the dense boron doping process of high dose, the process for being used are carried out to the polysilicon membrane
It is ion implantation technology or high-temperature diffusion process, forms piezoresistance layer.
Further technical scheme is：The step 3）In dense boron doping concentration be：8Ω-100Ω/□.
Further technical scheme is：Four pressure drags in the maximum stress area of the silicon island membrane structure for pressure-bearing,
To perceive largest deformation amount.
Further technical scheme is：Thickness of the thickness of the first silicon layer more than the second silicon layer.
Further technical scheme is：Second mask layer is photoresist layer, and insulating barrier is oxide or nitride.
It is using the beneficial effect produced by above-mentioned technical proposal：The present invention prepares pressure biography using monolithic SOI materials
Sensor, chip size can accomplish 1mm × 1mm, compared with the silicon cup type pressure sensor of same size, the tube core number on wafer
There is the raising in an order of magnitude；Using the sensing modes of silicon island membrane structure, measurement sensitivity is improved；Preparation process is simple, passes
Sensor cost declines to a great extent；Using layer layers of SOI material device（Second silicon layer）Thickness error is small（Film thickness error ±
0.5μm）The characteristics of prepare sensing membrane, measurement sensitivity, precision are improved；Double mask etching modes are avoided because once etching
The problem for forming big step afterwards and influenceing the photoresist of follow-up photoetching process not cover, not only can Simplified flowsheet step, also for
High aspect ratio technique provides another solution；Additionally, the pressure drag of pressure sensor of the invention is on the insulating layer
Formed, ensure that the normal work under 300 DEG C of hot environments, improve the use scope of the sensor.
Brief description of the drawings
Fig. 1 is the present invention by step 1）Structural representation afterwards；
Fig. 2 is the present invention by step 2）Structural representation afterwards；
Fig. 3 is the present invention by step 3）Structural representation afterwards；
Fig. 4 is the present invention by step 4）Structural representation afterwards；
Fig. 5 is the present invention by step 5）Structural representation afterwards；
Fig. 6 is the present invention by step 6）Structural representation afterwards；
Fig. 7 is the present invention by step 7）Structural representation afterwards；
Fig. 8 is the present invention by step 8）Structural representation afterwards；
Fig. 9-10 is the present invention by step 9）Structural representation afterwards；
Figure 11-12 is the present invention by step 10）Structural representation afterwards；
Wherein：1st, the first insulating barrier 2, the first silicon layer 3, the second insulating barrier 4, the second silicon layer 5, the 3rd insulating barrier 6,
Piezoresistance layer 7, pressure drag 8, passivation layer 9, fairlead 10, the first mask layer 11, the second mask layer.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Many details are elaborated in the following description in order to fully understand the present invention, but the present invention can be with
Other manner described here is different from using other to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
As shown in figure 12, the invention discloses a kind of MEMS pressure sensor of silicon island membrane structure, the sensor includes
Second silicon layer 4, the lower surface of second silicon layer 4 is provided with silicon island membrane structure, and it is exhausted that the upper surface of second silicon layer 4 is provided with the 3rd
Edge layer 5, the upper surface of the 3rd insulating barrier 5 is provided with four pressure drags, and four pressure drags carry out interconnection and constitute favour by metal line
Stone electric bridge, the upper surface of the 3rd insulating barrier 5 is provided with fairlead 9.The silicon island membrane structure includes spaced left silicon
Island membrane module, middle silicon island membrane module and right silicon island membrane module, left silicon island membrane module, middle silicon island membrane module and right silicon island film group
Part is from top to bottom the second insulating barrier 3 and the first silicon layer 2, and the left silicon island membrane module is identical with the structure of right silicon island membrane module,
The thickness of the first silicon layer 2 on the left silicon island membrane module and right silicon island membrane module is more than the first silicon on the membrane module of middle silicon island
The thickness of layer 2.Between the left silicon island membrane module and middle silicon island membrane module and middle silicon island membrane module and right silicon island film group
Interval is formed between part, the pressure drag 7 is relative with above-mentioned interval.
The invention also discloses a kind of MEMS pressure sensor preparation method of silicon island membrane structure, comprise the following steps：
1）The first silicon layer 2 lower surface covering or formed the first insulating barrier 1, the first silicon layer 2 upper surface covering or
The second insulating barrier 3 is formed, in second silicon layer 4 of upper surface covering or formation of the second insulating barrier 3, above multilayer material constitutes SOI
Material, the first silicon layer 2（Handle layer layers of SOI materials）Thickness be more than the second silicon layer 4（The device of SOI materials
Layer layers of thickness, as shown in Figure 1；
2）In the 3rd insulating barrier 5 of upper surface covering or formation of the second silicon layer 4, further, the 3rd insulating barrier 5 is by warm
Oxidation or chemical vapour deposition technique are deposited on the upper surface of the second silicon layer 4, as shown in Figure 2；
3）Covered in the upper surface of the 3rd insulating barrier 5 or form one layer of polysilicon membrane, and it is thin to the polysilicon
Film carries out the dense boron doping process of high dose, forms piezoresistance layer 6, and further, polysilicon membrane passes through chemical vapour deposition technique
Sedimentation is formed at the upper surface of the 3rd insulating barrier 5, thin to the polysilicon using ion implantation technology or high-temperature diffusion process
Film carries out the dense boron doping of high dose, and dense boron doping concentration is：8Ω-100Ω/□（Represents unit area）, as shown in Figure 3；
4）One layer of photoresist is coated by way of spin coating in the pressure drag layer surface for being formed, and carries out photoetching process, that is, led to
Light source is crossed to the selective exposure of photoresist, development is formed with the photoetching agent pattern of figure；To carrying out the pressure after photoetching process
Resistance layer carries out dry etch process, and four pressure drags 7 are formed after removal photoresist, and the quantity of pressure drag can be entered according to specific design scheme
Row adjustment, in the present embodiment, the quantity of pressure drag is 4, and four pressure drags 7 should in the maximum of the silicon island membrane structure for pressure-bearing
Power area, to perceive largest deformation amount, as shown in Figure 4；
5）Sputtered on pressure drag 7 for connecting four metal levels of pressure drag, chemical gas is passed through in the upper surface of above-mentioned device
Phase sedimentation deposits passivation layer 8, and for protection device, the method for preparing the passivation layer 8 preferentially selects Both Plasma Chemical Vapor
Sedimentation is prepared, as shown in Figure 5；
6）Passivation layer 8 is performed etching using photoetching process and etching technics, the terminal of etching is the upper of the 3rd insulating barrier 5
Surface, forms the fairlead 9 of pressure drag 7, the lead electrode of pressure drag 7 is exposed, as shown in Figure 6；
7）Selective etch is carried out to the first insulating barrier 1, the first insulating barrier after etching is formed for etching silicon island film knot
First mask layer 10 of structure, as shown in Figure 7；
8）The surface of the first insulating barrier 1 after to selective etch carries out photoresist coating, and using photoetching process, being formed is used for
The second mask layer 11 that the island membrane structure technique is etched when carrying out, as shown in Figure 8；
9）After the two-layer mask layer for etching silicon island membrane structure is formed, an etching technics, the depth of etching are carried out
It is the measuring silicon island elevation of the silicon island membrane structure to be formed, the second mask layer 11 is removed after etching into set depth, such as Fig. 9-10 institutes
Show；
10）Another etching technics is carried out, etching depth is step 9）The remaining thickness of the first silicon layer 2 after middle etching,
Until stopping etching after being etched to the second insulating barrier 3, the part second then removed under remaining first insulating barrier 1 and pressure drag is exhausted
Edge layer 3, forms the silicon island membrane structure for pressure-bearing, ultimately forms pressure sensor, as depicted in figs. 11-12.Second mask
Layer 11 is photoresist layer, and insulating barrier is oxide or nitride.
The present invention prepares pressure sensor using monolithic SOI materials, and chip size can accomplish 1mm × 1mm, with identical rule
The silicon cup type pressure sensor of lattice is compared, and the tube core number on wafer has the raising in an order of magnitude；Using silicon island membrane structure
Sensing modes, measurement sensitivity is improved；Preparation process is simple, sensor cost declines to a great extent；Using SOI materials device
layer（Second silicon layer）Layer thickness error is small（Film thickness error is at ± 0.5 μm）The characteristics of prepare sensing membrane, measurement sensitivity, essence
Degree is improved；Double mask etching modes avoid the photoetching that follow-up photoetching process is influenceed because forming big step after once etching
The problem that glue is not covered, not only can Simplified flowsheet step, also for high aspect ratio technique provides another solution；
Additionally, the pressure drag of pressure sensor of the invention is formed on the insulating layer, the normal work under 300 DEG C of hot environments is ensure that
Make, improve the use scope of the sensor.
Claims (9)
1. a kind of MEMS pressure sensor of silicon island membrane structure, it is characterised in that：The sensor includes the second silicon layer（4）, institute
State the second silicon layer（4）Lower surface be provided with silicon island membrane structure, second silicon layer（4）Upper surface be provided with the 3rd insulating barrier（5）,
3rd insulating barrier（5）Upper surface be provided with four pressure drags, four pressure drags carry out interconnection and constitute favour stone by metal line
Electric bridge, the 3rd insulating barrier（5）Upper surface be provided with fairlead（9）；
The silicon island membrane structure includes spaced left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module, left
Silicon island membrane module, middle silicon island membrane module and right silicon island membrane module are from top to bottom the second insulating barrier（3）With the first silicon layer（2）,
The left silicon island membrane module is identical with the structure of right silicon island membrane module, and on the left silicon island membrane module and right silicon island membrane module
One silicon layer（2）Thickness be more than the first silicon layer on middle silicon island membrane module（2）Thickness.
2. the MEMS pressure sensor of silicon island membrane structure according to claim 1, it is characterised in that：The left silicon island film group
Interval, the pressure drag are formed between part and middle silicon island membrane module and between middle silicon island membrane module and right silicon island membrane module
（7）It is relative with above-mentioned interval.
3. a kind of MEMS pressure sensor preparation method of silicon island membrane structure, it is characterised in that comprise the following steps：
1）In the first silicon layer（2）Lower surface covering or formed the first insulating barrier（1）, in the first silicon layer（2）Upper surface covering
Or form the second insulating barrier（3）, in the second insulating barrier（3）Upper surface covering or formed the second silicon layer（4）, above multilayer material
Constitute SOI materials；
2）In the second silicon layer（4）Upper surface covering or formed the 3rd insulating barrier（5）；
3）In the 3rd insulating barrier（5）Upper surface covering or form one layer of polysilicon membrane, and to the polysilicon membrane
The dense boron doping process of high dose is carried out, piezoresistance layer is formed（6）；
4）One layer of photoresist is coated by way of spin coating in the pressure drag layer surface for being formed, and carries out photoetching process, to carrying out light
Piezoresistance layer after carving technology carries out dry etch process, and four pressure drags are formed after removal photoresist（7）；
5）In pressure drag（7）On sputter for connect four metal levels of pressure drag, above-mentioned steps treatment after device upper surface
Passivation layer is deposited by chemical vapour deposition technique（8）, for protection device；
6）Using photoetching process and etching technics to passivation layer（8）Perform etching, the terminal of etching is the 3rd insulating barrier（5）It is upper
Surface, forms pressure drag（7）Fairlead（9）, by pressure drag（7）Lead electrode expose；
7）To the first insulating barrier（1）Selective etch is carried out, the first insulating barrier after etching is formed for etching silicon island membrane structure
The first mask layer（10）；
8）The first insulating barrier after to selective etch（1）Surface carries out photoresist coating, using photoetching process, is formed for carving
The second mask layer for losing the island membrane structure technique when carrying out（11）；
9）After the two-layer mask layer for etching silicon island membrane structure is formed, an etching technics is carried out, the depth of etching is institute
The measuring silicon island elevation of the silicon island membrane structure to be formed, the second mask layer is removed after etching into set depth（11）；
10）Another etching technics is carried out, etching depth is step 9）The first silicon layer after middle etching（2）Remaining thickness, directly
To being etched to the second insulating barrier（3）Stop etching afterwards, then remove remaining first insulating barrier（1）With the part second under pressure drag
Insulating barrier（3）, the silicon island membrane structure for pressure-bearing is formed, ultimately form pressure sensor.
4. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：The step
Rapid 2）In the 3rd insulating barrier（5）Second silicon layer is deposited on by thermal oxide or chemical vapour deposition technique（4）Upper surface.
5. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：The step
Rapid 3）In in the 3rd insulating barrier（5）Upper surface utilize chemical vapour deposition technique depositing polysilicon film, and to the polysilicon
Film carries out the dense boron doping process of high dose, and the process for being used is ion implantation technology or high-temperature diffusion process, shape
Into piezoresistance layer.
6. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：The step
Rapid 3）In dense boron doping concentration be：8Ω-100Ω/□.
7. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：Four pressures
Resistance（7）In the maximum stress area of the silicon island membrane structure for pressure-bearing, to perceive largest deformation amount.
8. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：First silicon
Layer（2）Thickness be more than the second silicon layer（4）Thickness.
9. the MEMS pressure sensor preparation method of silicon island membrane structure according to claim 3, it is characterised in that：Described
Two mask layers（11）It is photoresist layer, insulating barrier is oxide or nitride.
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| CN105486435A (en) * | 2016-01-04 | 2016-04-13 | 沈阳化工大学 | MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof |
| CN107500244A (en) * | 2017-08-15 | 2017-12-22 | 河北美泰电子科技有限公司 | The manufacture method of MEMS flow sensor |
| CN108147361A (en) * | 2017-12-22 | 2018-06-12 | 中国科学院半导体研究所 | The preparation method of dense boron-doping silicon nano wire MEMS Piezoresistive Pressure Sensor |
| CN110577185B (en) * | 2019-08-06 | 2021-11-16 | 西人马联合测控（泉州）科技有限公司 | MEMS structure, manufacturing method of MEMS structure and tire pressure sensor |
| CN112577645A (en) * | 2020-11-27 | 2021-03-30 | 广东工业大学 | Wear-resistant and protective integrated multifunctional thin film sensor and preparation method thereof |
| CN114184309B (en) * | 2021-10-27 | 2023-09-01 | 贵州航天智慧农业有限公司 | Piezoresistive MEMS sensor and preparation method thereof |
| CN114427930B (en) * | 2022-01-27 | 2023-11-17 | 苏州敏芯微电子技术股份有限公司 | Pressure sensor and method for producing the same |
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