CN103636001A - 无金的欧姆接触 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 53
- 150000003376 silicon Chemical class 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
本发明提供一种半导体结构,其具有:半导体;无金的导电结构,其与该半导体欧姆接触;以及一对导电层,其通过硅层分隔开。该结构包括:难熔金属层,其布置为与该半导体接触;并且其中通过该硅层分隔开的该对导电层中的一个是该难熔金属层。第二硅层被布置于该对导电层中的第二个之上,并且包括在该第二硅层上的第三导电层。在一实施例中,该半导体包括III-V族材料。
Description
技术领域
本公开大体涉及一种用于半导体器件的欧姆电性接触,并且更具体地涉及一种无金的欧姆接触。
背景技术
如在本领域中已知的,AlGaN/GAN高电子迁移率晶体管(HEMT)被越来越多地用于要求高频和高功率的应用中。为了发挥这些HEMT器件的潜力,需要达到低电阻、良好的边界锐度和可靠的欧姆接触。多数在器件中使用的低电阻欧姆接触使用Au作为顶层以降低薄层电阻并减少在为得到最低的比接触电阻率(lowest specific contact resistivity)所需要的高温退火期间的氧化。
在硅制造设备中Au的存在可能是能够引起灾难性的产量问题的严重的污染问题。对于需要在无金处理(例如CMOS硅制造)的环境中处理GaN器件晶片的应用,Au污染是严重的问题。
发明内容
根据本公开,提供一种器件,其具有III-V族半导体;以及与该半导体欧姆接触的无金的导电结构。
根据本公开,提供一种半导体结构,其具有:半导体;无金的导电结构,其与该半导体欧姆接触;以及一对导电层,其通过硅层分隔开,或者该一对导电层中的一个或二个与该硅层形成合金。
在一实施例中,该导电结构包括:难熔金属层,其布置为与该半导体接触;并且其中通过该硅层分隔开的或与该硅层形成合金的该一对导电层中的一个是该难熔金属层。
在一实施例中,第二硅层被布置在该一对导电层中的第二个之上,并且包括在该第二硅层上或与该第二硅层形成合金的第三导电层。
在一实施例中,提供一种半导体结构,其具有:半导体;导电结构,其与该半导体欧姆接触。该结构包括:第一金属层,其与该半导体欧姆接触;硅层,其与该第一金属层接触或形成合金;以及第二金属层,其与该硅层接触或形成合金。
在一实施例中,该半导体包括III-V族材料。
在一实施例中,该半导体包括GaN。
在一实施例中,该第一金属层是难熔金属。
在一实施例中,该第二金属层是铝。
在一实施例中,第二硅层与该第二金属层接触。
在一实施例中,第三金属层与该第二硅层接触或形成合金。
在一实施例中,该第三金属层是铂。
采用这种结构,无Au欧姆接触金属化,对于Si制造中的使用是至关重要的并且因此使得在Si加工厂中制造Si晶片上的异质集成(heterogeneous integration)的GaN成为可能。该电性接触具有良好的欧姆接触电阻。此外,由于避免使用贵金属Au,该接触具有相对低的成本。
在附图和下面的描述中介绍本公开的一个或多个实施例的细节。根据说明书和附图以及权利要求,本公开的其他特征、目的和优点将是显而易见的。
附图说明
图1是根据本公开的具有电性接触的晶体管器件的图;以及
图2是图1的晶体管器件中的电性接触的一个示例性电性接触的放大图。
在不同的附图中相同的参考标记表示相同的元件。
具体实施方式
现在参考图1,示出了一种晶体管器件10,该晶体管器件10在这里例如是AlGaN/GaN高电子迁移率晶体管(HEMT)结构。在此,在晶片(wafer)上形成该晶体管器件10,如所示的,该晶片具有单晶衬底12、在该衬底12上的GaN缓冲层14以及在该GaN层14上的半导体层16。该晶体管器件10分别具有栅电极17、以及源电极和漏电极18、20。该源电极和漏电极18、20是无金的电性接触并且二者与该半导体层16是欧姆接触的,这里的层16是III-V族AlGaN层。该源电极和漏电极18、20在结构上是相同的;作为其一个示例,这里在图2中详细地示出了源接触18。
源接触或漏接触是与该半导体层16欧姆接触的导电结构,并且包括:难熔金属层22(在这里是具有范围的厚度的钛层),其与半导体层16接触;在该难熔金属层22上的硅层24,其具有范围的厚度;在此例如是铝的导电层26,其在此具有的厚度,与该硅层24接触;在该铝层26上的硅层28,其具有范围的厚度;以及在此例如是铂的导电层30,其在此具有的厚度,与该硅层26接触。
在这里,例如通过电子束蒸发在GaN/GaN HEMT晶片上形成该源电极或漏电极18、20。然后在特定的形成合金温度下的氮气氛中使该晶片形成合金以形成降低接触电阻的低电阻隔层(interlayer)。
现在应当认识到根据本公开的器件包括III-V族半导体和与该半导体欧姆接触的无金的导电结构。
还应当认识到根据本公开的半导体结构包括半导体;与该半导体欧姆接触的无金的导电结构,这种结构包括:一对导电层,其通过硅层分隔开,或者该对导电层的一个或二个与该硅层形成合金。该半导体结构包括一个或多个下列特征:其中该导电结构包括:被布置为与该半导体接触的难熔金属层,并且其中通过该硅层分隔开的该对导电层中的一个是该难熔金属层或硅与该难熔金属层的合金;第二硅层,其被布置于该对导电层中的第二个上,并且包括在该第二硅层上的第三导电层;其中该第一金属层是钛且该第三金属层是铂;其中该半导体是III-V族材料。
已描述了本公开的若干个实施例。然而,将理解的是在不脱离本公开的精神和范围的情况下可以做出各种修改。例如,应当理解的是,作为使用该结构的结果,这里的层可以与另一层形成合金以使得到的结构可包括硅和钛的合金、硅和铝的合金、和/或硅和铂的合金。因此,其他实施例在所述权利要求的范围内。
Claims (7)
1.一种器件,包括:
III-V族半导体;以及
无金的导电结构,其与所述半导体欧姆接触。
2.一种半导体结构,包括:
半导体;
无金的导电结构,其与所述半导体欧姆接触,这样的结构包括:
一对导电层,其由硅层分隔开,或者所述一对导电层中的一个或二个导电层与所述硅层形成合金。
3.根据权利要求2所述的半导体结构,其中,所述导电结构包括:
难熔金属层,其被布置为与该半导体接触;并且
其中,由所述硅层分隔开的所述一对导电层中的一个导电层是所述难熔金属层或硅与所述难熔金属层的合金。
4.根据权利要求3所述的半导体结构,包括被布置于所述一对导电层中的第二个导电层之上的第二硅层,并且包括在所述第二硅层上的第三导电层。
5.根据权利要求2所述的半导体结构,其中,第一金属层是钛,且第三金属层是铂。
6.根据权利要求5所述的半导体结构,其中,所述半导体是III-V族材料。
7.根据权利要求6所述的半导体结构,其中,所述半导体包括GaN。
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US13/152,481 | 2011-06-03 | ||
US13/152,481 US8466555B2 (en) | 2011-06-03 | 2011-06-03 | Gold-free ohmic contacts |
PCT/US2012/038497 WO2012166385A1 (en) | 2011-06-03 | 2012-05-18 | Gold-free ohmic contacts |
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CN103636001B CN103636001B (zh) | 2016-08-17 |
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JP (1) | JP6057990B2 (zh) |
KR (1) | KR101510094B1 (zh) |
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Cited By (3)
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CN110192283A (zh) * | 2017-02-21 | 2019-08-30 | 雷声公司 | 具有无金接触部的氮化物结构及形成这种结构的方法 |
CN110226231A (zh) * | 2017-02-21 | 2019-09-10 | 雷声公司 | 具有无金接触部的氮化物结构及形成这种结构的方法 |
CN113889534A (zh) * | 2021-09-27 | 2022-01-04 | 南方科技大学 | 无金欧姆接触电极、半导体器件和射频器件及其制法 |
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US9911817B2 (en) | 2015-07-17 | 2018-03-06 | Cambridge Electronics, Inc. | Field-plate structures for semiconductor devices |
US9917171B2 (en) | 2016-07-21 | 2018-03-13 | International Business Machines Corporation | Low-resistive, CMOS-compatible, Au-free ohmic contact to N—InP |
US9846277B1 (en) | 2016-07-28 | 2017-12-19 | Hewlett Packard Enterprise Development Lp | Semiconductor devices |
US11581448B2 (en) | 2021-04-01 | 2023-02-14 | Raytheon Company | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
US11710708B2 (en) | 2021-08-19 | 2023-07-25 | Raytheon Company | On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage |
US20240063095A1 (en) * | 2021-11-12 | 2024-02-22 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
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2011
- 2011-06-03 US US13/152,481 patent/US8466555B2/en active Active
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