CN103503054A - 薄膜晶体管阵列装置以及使用其的el显示装置 - Google Patents

薄膜晶体管阵列装置以及使用其的el显示装置 Download PDF

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Publication number
CN103503054A
CN103503054A CN201280021113.9A CN201280021113A CN103503054A CN 103503054 A CN103503054 A CN 103503054A CN 201280021113 A CN201280021113 A CN 201280021113A CN 103503054 A CN103503054 A CN 103503054A
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CN
China
Prior art keywords
thin film
film transistor
tft
electrode
array device
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Pending
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CN201280021113.9A
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English (en)
Chinese (zh)
Inventor
东宽史
日高义晴
细野信人
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Joled Inc
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Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN103503054A publication Critical patent/CN103503054A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
CN201280021113.9A 2012-01-26 2012-11-22 薄膜晶体管阵列装置以及使用其的el显示装置 Pending CN103503054A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-013724 2012-01-26
JP2012013724 2012-01-26
PCT/JP2012/007518 WO2013111225A1 (ja) 2012-01-26 2012-11-22 薄膜トランジスタアレイ装置及びそれを用いたｅｌ表示装置

Publications (1)

Publication Number Publication Date
CN103503054A true CN103503054A (zh) 2014-01-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280021113.9A Pending CN103503054A (zh) 2012-01-26 2012-11-22 薄膜晶体管阵列装置以及使用其的el显示装置

Country Status (5)

Country Link
US (1) US20140021496A1 (ko)
JP (1) JPWO2013111225A1 (ko)
KR (1) KR101544663B1 (ko)
CN (1) CN103503054A (ko)
WO (1) WO2013111225A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170139296A1 (en) * 2014-07-30 2017-05-18 Sharp Kabushiki Kaisha Display device and method for manufacturing same
US10175518B2 (en) 2014-07-30 2019-01-08 Sharp Kabushiki Kaisha Method for manufacturing display device including a wiring layer of a molybdenum-based material
JP6633330B2 (ja) * 2014-09-26 2020-01-22 株式会社半導体エネルギー研究所 半導体装置
US10275837B2 (en) * 2015-10-30 2019-04-30 Microsoft Technology Licensing, Llc Recommending a social structure
US20230037057A1 (en) * 2021-07-30 2023-02-02 Sharp Display Technology Corporation Uv-patterned conductive polymer electrode for qled

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1279515A (zh) * 1999-06-28 2001-01-10 株式会社半导体能源研究所 制作电光器件的方法
CN1615452A (zh) * 2002-01-15 2005-05-11 三星电子株式会社 显示器布线及其制造方法与包含该布线的薄膜晶体管阵列面板及其制造方法
CN1959942A (zh) * 2005-10-31 2007-05-09 中华映管股份有限公司 薄膜晶体管的制作方法
CN101901768A (zh) * 2009-05-29 2010-12-01 株式会社半导体能源研究所 半导体装置以及半导体装置的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2880274B2 (ja) * 1990-08-27 1999-04-05 株式会社日立製作所 銅配線の形成方法
JP2002353222A (ja) * 2001-05-29 2002-12-06 Sharp Corp 金属配線、それを備えた薄膜トランジスタおよび表示装置
US6727645B2 (en) * 2002-05-24 2004-04-27 International Business Machines Corporation Organic LED device
JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP2011154380A (ja) * 2003-03-20 2011-08-11 Toshiba Mobile Display Co Ltd 表示装置の形成方法
KR100938885B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
JP4394466B2 (ja) * 2004-01-29 2010-01-06 奇美電子股▲ふん▼有限公司 銅拡散を防止可能なアレイ基板の製造方法
JP2008536295A (ja) * 2005-03-11 2008-09-04 エルジー・ケム・リミテッド 銀被覆電極を有するｌｃｄ装置
US7566899B2 (en) * 2005-12-21 2009-07-28 Palo Alto Research Center Incorporated Organic thin-film transistor backplane with multi-layer contact structures and data lines
KR101308200B1 (ko) * 2008-05-06 2013-09-13 엘지디스플레이 주식회사 플렉서블 유기발광 표시장치 및 그 제조 방법
CN104733540B (zh) * 2009-10-09 2019-11-12 株式会社半导体能源研究所 半导体器件
WO2011138818A1 (ja) * 2010-05-07 2011-11-10 パナソニック株式会社 薄膜トランジスタ装置、薄膜トランジスタアレイ装置、有機ｅｌ表示装置、及び薄膜トランジスタ装置の製造方法
KR101108176B1 (ko) * 2010-07-07 2012-01-31 삼성모바일디스플레이주식회사 더블 게이트형 박막 트랜지스터 및 이를 구비한 유기 발광 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1279515A (zh) * 1999-06-28 2001-01-10 株式会社半导体能源研究所 制作电光器件的方法
CN1615452A (zh) * 2002-01-15 2005-05-11 三星电子株式会社 显示器布线及其制造方法与包含该布线的薄膜晶体管阵列面板及其制造方法
CN1959942A (zh) * 2005-10-31 2007-05-09 中华映管股份有限公司 薄膜晶体管的制作方法
CN101901768A (zh) * 2009-05-29 2010-12-01 株式会社半导体能源研究所 半导体装置以及半导体装置的制造方法

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Publication number Publication date
JPWO2013111225A1 (ja) 2015-05-11
WO2013111225A1 (ja) 2013-08-01
US20140021496A1 (en) 2014-01-23
KR20130141694A (ko) 2013-12-26
KR101544663B1 (ko) 2015-08-17

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Applicant after: The special display of the organic thunder of Japan of Co., Ltd.

Address before: Osaka Japan

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Application publication date: 20140108

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