CN103456623A - Etching control method for reducing deposition of polymers at edges of wafers - Google Patents
Etching control method for reducing deposition of polymers at edges of wafers Download PDFInfo
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- CN103456623A CN103456623A CN2012101706658A CN201210170665A CN103456623A CN 103456623 A CN103456623 A CN 103456623A CN 2012101706658 A CN2012101706658 A CN 2012101706658A CN 201210170665 A CN201210170665 A CN 201210170665A CN 103456623 A CN103456623 A CN 103456623A
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Abstract
The invention relates to an etching control method for reducing deposition of polymers at the edges of wafers. The etching control method includes step 1, idling a processing cavity for at least 20-30 minutes to enable the processing cavity to be in a non-working state so as to cool the processing cavity before a plasma etching manufacturing procedure with large quantities of generated polymers is about to be performed in the processing cavity; step 2, performing the plasma etching manufacturing procedure with the large quantities of generated polymers on the wafers in the processing cavity which is idle for a period of time. The etching control method has the advantages that a high-power etching manufacturing procedure is performed in the processing cavity, then the low-power and high-polymer etching manufacturing procedure is performed in the processing cavity straight after the high-power etching manufacturing procedure is completed, and the processing cavity is idle for the certain period of time between the early etching manufacturing procedure and the later etching manufacturing procedure, so that the polymers which are deposited and formed at the edges of the wafers in the later etching manufacturing procedure with the large quantities of generated polymers can be effectively reduced, and the problem of edge deficiency of wafers is solved; the uniformity of the surfaces of the etched wafers can be effectively improved, and wafer etching effects and the quality of products are improved.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, relate to a kind of etching control method, refer in particular to a kind of etching control method in the etching processing procedure that polymer is many that is applicable to produce, for effectively reducing the deposition of crystal round fringes polymer.
Background technology
In the generation polymer plasma etching processing procedure how of semiconductor applications, in plasma processing chambers, to etching reaction gas, (by one or more gas compositions) applies energy so that the gas excitation is formed to plasma, and has radio frequency (RF) energy, microwave energy and/or the magnetic field that can be used for producing and maintaining intermediate density or highdensity plasma in this plasma process chamber; Because the heating of plasma makes the focusing ring of crystal round fringes have very high temperature, and this temperature is higher than the temperature that can make the compound thermal cracking on this focusing ring, due to wafer by the attemperating unit temperature control, therefore it has the temperature lower than focusing ring, so the compound after pyrolysis can also form polymer again in the crystal round fringes deposition of relative low temperature, this is the main cause of crystal round fringes deposited polymer, the disappearance that can cause the crystal round fringes scope, reduce etching effect and the product quality of wafer greatly.
Yet, in producing the plasma etching processing procedure that polymer is many, be difficult to accomplish to monitor in real time the deposition characteristics of crystal round fringes polymer, and can't improve the uniformity of crystal column surface after etching.
Summary of the invention
The object of the present invention is to provide a kind of etching control method that reduces the crystal round fringes polymer deposition, the effective uniformity of crystal column surface after enhanced etching, improve etching effect and the product quality of wafer.
In order to achieve the above object, technical scheme of the present invention is to provide a kind of etching control method that reduces the crystal round fringes polymer deposition, specifically comprises following steps:
Step 1, for the treatment chamber that will be produced the plasma etching processing procedure that polymer is many, make its idle a period of time with in non operating state, for the cooling processing chamber;
Step 2, in the treatment chamber of a period of time of having left unused, wafer is produced to the plasma etching processing procedure that polymer is many.
In described step 1, make to be produced at least idle 20-30 minute for the treatment of chamber of the plasma etching processing procedure that polymer is many.
The etching control method of minimizing crystal round fringes polymer deposition provided by the present invention, be applied to produce the plasma etching processing procedure that polymer is many, particularly for carrying out before the treatment chamber of high power etching processing procedure, and follow-up treatment chamber of and then carrying out the etching processing procedure of low-power and high polymer.Because between the twice etching processing procedure of above-mentioned front and back, be easy to form number of polymers in the crystal round fringes deposition, because high power etching processing procedure before makes the treatment chamber excess Temperature, when carrying out the etching processing procedure of follow-up low-power and high polymer, polymer is not easy to deposit on etching cavity, but extremely easily deposits on the relatively low crystal round fringes of temperature.
In sum, the present invention is between the twice etching processing procedure of front and back, adopt the method for idle cooling processing chamber certain hour section, once produce the polymer formed in the crystal round fringes deposition in the etching processing procedure that polymer is many after effectively reducing, make the problem of crystal round fringes disappearance improve; And the uniformity of crystal column surface after effective enhanced etching, etching effect and the product quality of raising wafer.
Embodiment
Below describe the specific embodiment of the present invention in detail.
Due in producing the plasma etching processing procedure that polymer is many, the polymer that is deposited on crystal round fringes is mainly caused by the silicon thin film over etching.Therefore, can be under various different situations, use the method for etching plasma that the generation polymer is many directly exposed silicon wafer surface to be carried out to etching to generate polymer, detect the thickness at the polymer of formation that crystal round fringes deposits by film detecting device subsequently, thereby sum up the Formation and characteristics of polymer by simple Principle of Statistics.
By various tests, draw, if just completed other high-power etching processing procedures before the treatment chamber of using during test, so this time produce the plasma etching that polymer is many and can form thicker polymer at exposed silicon wafer surface marginal deposit, make after etching the uniformity of crystal column surface poor.
And if be not used to process other high power etching processing procedures before the treatment chamber that when test used, so this time produce the plasma etching that polymer is many and can form thinner less polymer at exposed silicon wafer surface marginal deposit, make after etching the uniformity of crystal column surface better.
Comprehensive above-mentioned result of the test, be not difficult to find out, if before being produced the plasma etching that polymer is many, treatment chamber when idle non operating state, obviously is conducive to produce the etching effect of the etching processing procedure that polymer is many always.But in the practical semiconductor manufacture process, wanting to accomplish that produce the plasma etching processing procedure that polymer is many is all to carry out in the treatment chamber in idle state before at every turn, is to realize extremely unrealistic also being difficult to.
Therefore, a kind of etching control method that reduces the crystal round fringes polymer deposition provided by the present invention, it comprises following steps:
Step 1, for the treatment chamber that will be used for being produced the plasma etching processing procedure that polymer is many, make its idle a period of time with in non operating state, for the cooling processing chamber;
Step 2, in the treatment chamber of a period of time of having left unused, wafer is produced to the plasma etching processing procedure that polymer is many.
In described step 1, make will be used for being produced at least idle 20-30 minute for the treatment of chamber of the plasma etching processing procedure that polymer is many.
The etching control method of minimizing crystal round fringes polymer deposition provided by the present invention, be applied to produce the plasma etching processing procedure that polymer is many, particularly for carrying out before the treatment chamber of high power etching processing procedure, and follow-up treatment chamber of and then carrying out the etching processing procedure of low-power and high polymer.Because between the twice etching processing procedure of above-mentioned front and back, be easy to form number of polymers in the crystal round fringes deposition, because high power etching processing procedure before makes the treatment chamber excess Temperature, when carrying out the etching processing procedure of follow-up low-power and high polymer, polymer is not easy to deposit on etching cavity, but extremely easily deposits on the relatively low crystal round fringes of temperature.
In sum, the present invention is between the twice etching processing procedure of front and back, adopt the method for idle cooling processing chamber certain hour section, once produce the polymer formed in the crystal round fringes deposition in the etching processing procedure that polymer is many after effectively reducing, make the problem of crystal round fringes disappearance improve; And the uniformity of crystal column surface after effective enhanced etching, etching effect and the product quality of raising wafer.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (2)
1. an etching control method that reduces the crystal round fringes polymer deposition, is characterized in that, specifically comprises following steps:
Step 1, for the treatment chamber that will be produced the plasma etching processing procedure that polymer is many, make its idle a period of time with in non operating state, for the cooling processing chamber;
Step 2, in the treatment chamber of a period of time of having left unused, wafer is produced to the plasma etching processing procedure that polymer is many.
2. the etching control method of minimizing crystal round fringes polymer deposition as claimed in claim 1, is characterized in that, in described step 1, makes to be produced at least idle 20-30 minute for the treatment of chamber of the plasma etching processing procedure that polymer is many.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101706658A CN103456623A (en) | 2012-05-29 | 2012-05-29 | Etching control method for reducing deposition of polymers at edges of wafers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101706658A CN103456623A (en) | 2012-05-29 | 2012-05-29 | Etching control method for reducing deposition of polymers at edges of wafers |
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| CN103456623A true CN103456623A (en) | 2013-12-18 |
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| CN2012101706658A Pending CN103456623A (en) | 2012-05-29 | 2012-05-29 | Etching control method for reducing deposition of polymers at edges of wafers |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101036218A (en) * | 2004-10-08 | 2007-09-12 | 西尔弗布鲁克研究有限公司 | Method of removing polymer coating from an etched trench |
| CN101057320A (en) * | 2004-09-03 | 2007-10-17 | 兰姆研究有限公司 | Etch with uniformity control |
| CN101897007A (en) * | 2007-12-12 | 2010-11-24 | 应用材料公司 | Method and apparatus for removing polymer from the wafer backside and edge |
| CN101989544A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Structure capable of reducing substrate back polymer |
-
2012
- 2012-05-29 CN CN2012101706658A patent/CN103456623A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101057320A (en) * | 2004-09-03 | 2007-10-17 | 兰姆研究有限公司 | Etch with uniformity control |
| CN101036218A (en) * | 2004-10-08 | 2007-09-12 | 西尔弗布鲁克研究有限公司 | Method of removing polymer coating from an etched trench |
| CN101897007A (en) * | 2007-12-12 | 2010-11-24 | 应用材料公司 | Method and apparatus for removing polymer from the wafer backside and edge |
| CN101989544A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Structure capable of reducing substrate back polymer |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140421 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20140421 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20131218 |