CN101989544A - Structure capable of reducing substrate back polymer - Google Patents
Structure capable of reducing substrate back polymer Download PDFInfo
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- CN101989544A CN101989544A CN2009100560873A CN200910056087A CN101989544A CN 101989544 A CN101989544 A CN 101989544A CN 2009100560873 A CN2009100560873 A CN 2009100560873A CN 200910056087 A CN200910056087 A CN 200910056087A CN 101989544 A CN101989544 A CN 101989544A
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Abstract
The invention provides a structure capable of reducing a substrate back polymer. The structure is arranged in a plasma treatment chamber and comprises a focusing ring which surrounds the peripheral side of a base. The focusing ring is provided with an extending part and a conductor ring which is arranged below the back of a substrate and is located between the peripheral side of the base and the extending part of the focusing ring, wherein the extending part at least partially extends below the edge of the back of the substrate. In the invention, the temperature of the back of the substrate is limited through the inserted conductor ring, and thereby, the thermal cracking of carbides on the focusing ring due to the high temperature and the polymer formation on the back of the substrate are limited. The etching uniformity of the substrate is ensured while the substrate back polymer is effectively reduced.
Description
Technical field
The present invention relates to the plasma processing apparatus field, relate in particular to a kind of structure of the homogeneity that reduces substrate back polymer and guarantee substrate is handled.
Background technology
In the plasma etching process of substrate, as shown in Figure 1, in plasma etch chamber, be provided with pedestal 1 ', be positioned at this pedestal 1 ' lip-deep strutting piece 3 ', this strutting piece is generally electrostatic chuck 3 ' (ESC), and is embedded in the DC electrode 4 ' in this electrostatic chuck 3 '.Go up installation at this electrostatic chuck 3 ' and treat etched substrate 2 '.This plasma is indoor also to be comprised around the dead ring 11 ' of the outer circumferential side that is arranged on pedestal 1 ', and this dead ring 11 ' can be made by quartz; Be positioned on the dead ring 11 ' and the close focusing ring 12 ' that also is provided with around substrate 2 ', this focusing ring 12 ' is arranged under the peripheral part, the back side of substrate 2 ' simultaneously, promptly is provided with the gap between the back side of the upper surface of this focusing ring 12 ' and substrate 2 '; And centering on the cover ring 14 ' that focusing ring 12 ' is provided with, it is used to cover on the described dead ring 11 '.
When carrying out etching, (by one or more gas compositions) applies energy and forms plasma so that gas is encouraged to etching reaction gas in plasma processing chamber, and has radio frequency (RF) energy, microwave energy and/or the magnetic field that can be used for producing and keeping intermediate density or highdensity plasma in this plasma process chamber; Because the heating of plasma makes the focusing ring 12 ' of substrate edge have very high temperature, and this temperature is higher than the fluorocarbon that can make on this focusing ring 12 ' or the temperature of hydrocarbon thermal cracking, because substrate 2 ' is by attemperating unit (as the helium that flows between electrostatic chuck and substrate) temperature control, thereby it has the temperature lower than focusing ring 12 ', so fluorocarbon after the pyrolysis or hydrocarbon can and form substrate polymer (and this also is to cause substrate back to form the main cause of polymer) again in the back edge 20 ' deposition of the relative substrate 2 ' of low temperature, cause needing in the subsequent process steps further handle the polymer of these accumulations.This can reduce production efficiency widely.
Summary of the invention
The purpose of this invention is to provide a kind of structure that reduces substrate back polymer, simultaneously, this structure can strengthen the etched homogeneity of substrate.
In order to achieve the above object, the invention provides a kind of structure that reduces substrate back polymer, it is compassingly set at the outer circumferential side of the substrate pedestal in the plasma process chamber, and the edge of described substrate protrudes in the edge of the upper surface of described pedestal; The structure of described minimizing substrate back polymer comprises: a focusing ring, and it is compassingly set at the outer circumferential side of described pedestal; This focusing ring has an extension, and it extends under the edge of substrate back at least in part; And a conductor loops, it is arranged under the back side of substrate, and between the extension of the outer circumferential side of described pedestal and described focusing ring.
Wherein, described conductor loops can be made by materials such as silicon, carborundum or graphite.
Described focusing ring (comprising first focusing ring and second focusing ring) can be made by semiconductor or conductor material, comprises silicon (for example monocrystalline silicon or polysilicon), silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)), aluminum oxide, aln precipitation, silicon nitride or quartz etc.Because in the plasma etching process of substrate, this focusing ring will be directly exposed in the plasma, therefore, preferably high-purity material is made this focusing ring, for example silicon (for example monocrystalline silicon or polysilicon) or silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)) etc.
In the another kind of technical scheme of the present invention, described focusing ring can be separated to form first focusing ring and second focusing ring along the upper surface of its extension; Wherein, described first focusing ring is compassingly set at the outer circumferential side of described pedestal; Described second focusing ring comprises extension, and it extends under the edge of substrate back at least in part.
Among the present invention, the upper surface of the upper surface of described conductor loops and described focusing ring extension be positioned at conplane.
Among the present invention, also include the dead ring of the outer circumferential side that is compassingly set at described pedestal in the described plasma processing chamber; Described focusing ring and conductor loops are arranged on this dead ring, and cover the top surface of whole dead ring.
Wherein, described dead ring can be by ceramic material (as Si oxide, just quartzy, or aluminum oxide), and perhaps polymeric material (as polyimides) etc. is made.Preferably, use quartz material to make this dead ring.
Further, the structure that reduces substrate back polymer of the present invention also comprises the cover ring that an outer circumferential side that centers on focusing ring is provided with, and it covers on the outer radius upper surface of described dead ring.Perhaps, this cover ring can be the part that extends radially outwardly that forms on focusing ring, and promptly cover ring and focusing ring are integrally formed.
Further, the structure that reduces substrate back polymer of the present invention also comprises some cooling ducts that are arranged in the dead ring of running through, and it transmits cooling object to focusing ring and/or conductor loops.
Structure according to above-mentioned the reduced substrate back polymer that provides, the present invention also provides a kind of plasma processing chamber that comprises this structure, this plasma process chamber has: substrate, be used to place the pedestal of this substrate, and the structure of reduced substrate back polymer that is compassingly set at the outer circumferential side of this pedestal; Wherein,
The edge of described substrate protrudes in the edge of the upper surface of described pedestal;
The structure of described minimizing substrate back polymer comprises: a focusing ring, and it is compassingly set at the outer circumferential side of described pedestal; This focusing ring has an extension, and it extends under the edge of substrate back at least in part; And a conductor loops, it is arranged under the back side of substrate, and between the extension of the outer circumferential side of described pedestal and described focusing ring.
Described pedestal also comprises one and is positioned at substrate support on its upper surface, that be used for mounted substrate, and this substrate support comprises electrostatic chuck and is embedded in the interior DC electrode of this electrostatic chuck.
In the another kind of technical scheme of the present invention, described focusing ring can be separated to form first focusing ring and second focusing ring along the upper surface of its extension; Wherein, described first focusing ring is compassingly set at the outer circumferential side of described pedestal; Described second focusing ring comprises extension, and it extends under the edge of substrate back at least in part.
Among the present invention, the upper surface of the upper surface of described conductor loops and described focusing ring extension (or upper surface of second focusing ring) be positioned at conplane.
Further, the dead ring that also includes the outer circumferential side that is compassingly set at described pedestal in the plasma processing chamber of the present invention; Described focusing ring and conductor loops are arranged on this dead ring, and cover the top surface of whole dead ring.
Among the present invention, the described structure that reduces substrate back polymer also comprises the cover ring that an outer circumferential side that centers on focusing ring is provided with, and it covers on the outer radius upper surface of described dead ring.Perhaps, this cover ring can be the part that extends radially outwardly that forms on focusing ring, and promptly cover ring and focusing ring are integrally formed.
Also comprise some cooling ducts that are arranged in dead ring and/or the pedestal of running through in the plasma processing chamber of the present invention, it transmits cooling object to focusing ring and/or conductor loops.
In the above-mentioned technical scheme of mentioning, because the conductor loops of inserting setting is in the plasma etching process of substrate, has minimum degree of exposing to the open air, while is owing to the effect of the refrigerating gas of importing by the cooling duct, so the temperature of this conductor loops can not reach and make the height of the carbide thermal cracking on the focusing ring, so can limit the formation that is deposited on the polymer of substrate back because of the carbide thermal cracking on the focusing ring, thereby can significantly reduce the polymer that is formed on substrate back.
Again owing to choose in the execution mode a kind of, the present invention further adopted separate on, the special construction of following two sections focusing rings, focusing ring in the event (first focusing ring) can be used as the thermodynamic barrier of the following focusing ring (second focusing ring) of more close substrate back, because hot transmission will become slower in vacuum environment, again because last, existing gap between the following focusing ring, to directly cause heat conduction between the two to be interrupted, that is to say, the heat that substrate produces in etching process will by on focusing ring be limited to interrupt when being passed to down focusing ring, the following focusing ring of institute can remain on than the temperature of cooling off.Thus, substrate is being carried out in the plasma etch processes, the temperature of following focusing ring can not reach and make the height of carbide thermal cracking on it, so can limit because of the formation of the carbide thermal cracking hydatogenesis on the focusing ring down at the polymer of substrate back.Because this main cause that forms substrate back polymer is limited, so can significantly reduce the polymer that is formed on substrate back.
At last, because the setting of conductor loops in the present invention can be in the RF coupling that allows on the basis that minimizes the inclination of substrate profile between focusing ring and the electrode, so can not cause the density distribution inequality of etching process ionic medium body, thereby guarantee etched homogeneity at substrate surface.
The technical scheme that the present invention also provides another kind can reduce the structure of substrate back polymer, it is compassingly set at the outer circumferential side of the substrate pedestal in the plasma process chamber, and the edge of described substrate protrudes in the edge of the upper surface of described pedestal;
This structure that can reduce substrate back polymer comprises: one first focusing ring, and it is compassingly set at the outer circumferential side of described pedestal; And one second focusing ring, it is positioned at the below of described first focusing ring, and an end of this second focusing ring extends under the edge of substrate back at least in part; Described second focusing ring is made by conductor material.
Wherein, described second focusing ring is made by conductor materials such as silicon, carborundum or graphite.
Described first focusing ring can be made by semiconductor or conductor material, comprises silicon (for example monocrystalline silicon or polysilicon), silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)), aluminum oxide, aln precipitation, silicon nitride or quartz etc.Because in the plasma etching process of substrate, this focusing ring will be directly exposed in the plasma, therefore, preferably high-purity material is made this upper and lower focusing ring, for example silicon (for example monocrystalline silicon or polysilicon) or silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)) etc.
Among the present invention, also include the dead ring of the outer circumferential side that is compassingly set at described pedestal in the described plasma processing chamber; Described second focusing ring is arranged on this dead ring, and covers the top surface of whole dead ring.
Wherein, described dead ring can be by ceramic material (as Si oxide, just quartzy, or aluminum oxide), and perhaps polymeric material (as polyimides) etc. is made; Preferably, use quartz material to make this dead ring.
Further, the structure that reduces substrate back polymer of the present invention also comprises the cover ring that an outer circumferential side that centers on first focusing ring and second focusing ring is provided with, and it covers on the outer radius upper surface of described dead ring.
Further, the structure that reduces substrate back polymer of the present invention also comprises some cooling ducts that are arranged in the dead ring of running through, and it transmits cooling object to the second focusing ring.
Can reduce the structure of substrate back polymer according to above-mentioned another kind, the present invention also provides a kind of plasma processing chamber that comprises this structure, this plasma process chamber has: substrate, be used to place the pedestal of this substrate, and the structure of reduced substrate back polymer that is compassingly set at the outer circumferential side of this pedestal; Wherein,
The edge of described substrate protrudes in the edge of the upper surface of described pedestal;
The structure of described minimizing substrate back polymer comprises one first focusing ring, and it is compassingly set at the outer circumferential side of described pedestal; And one second focusing ring, it is positioned at the below of described first focusing ring, and an end of this second focusing ring extends under the edge of substrate back at least in part; This second focusing ring is made by conductor material.
Among the present invention, described pedestal also comprises one and is positioned at substrate support on its upper surface, that be used for mounted substrate, and this substrate support comprises electrostatic chuck and is embedded in the interior DC electrode of this electrostatic chuck.
Further, the dead ring that also includes the outer circumferential side that is compassingly set at described pedestal in the plasma processing chamber of the present invention; Described second focusing ring is arranged on this dead ring, and covers the top surface of whole dead ring.
Among the present invention, the described structure that reduces substrate back polymer also comprises the cover ring that an outer circumferential side that centers on first focusing ring and second focusing ring is provided with, and it covers on the outer radius upper surface of described dead ring.
Also comprise some cooling ducts that are arranged in dead ring and/or the pedestal of running through in the plasma processing chamber of the present invention, it transmits cooling object to the second focusing ring.
In above-mentioned second kind of technical scheme mentioning, be equivalent to will before the conductor loops and second focusing ring in first kind of technical scheme form one, become around a conductor focusing ring that is arranged on substrate back, it combines the above-mentioned insertion conductor loops and the architectural feature of segmentation focusing ring, thereby on the basis of having simplified the total composition, reached the constructed effect that above-mentioned first kind of comparatively complicated technical scheme can reach.Promptly limit the formation that is deposited on the polymer of substrate back because of the carbide thermal cracking, effectively reduce the polymer that is formed on substrate back.And, this conduction focusing ring be arranged so that it is minimizing the RF coupling that allows on the basis that the substrate profile tilts between focusing ring and the electrode, so can not cause the density distribution inequality of etching process ionic medium body, thereby guarantee etched homogeneity at substrate surface.
Description of drawings
Fig. 1 is the structural representation that a kind of meeting produces polymer in the prior art in substrate back;
Fig. 2 is the schematic diagram of a kind of embodiment of the structure that reduces substrate back polymer provided by the invention;
Fig. 3 is the schematic diagram of second kind of embodiment of the structure that reduces substrate back polymer provided by the invention;
Fig. 4 is the schematic diagram of the third embodiment of the structure that reduces substrate back polymer provided by the invention;
Fig. 5 is the schematic diagram of the 4th kind of embodiment of the structure that reduces substrate back polymer provided by the invention.
Fig. 6 strengthens the schematic diagram of the homogeneity that substrate is handled for the structure that reduces substrate back polymer provided by the invention.
Fig. 7 is for after replacing to dielectric collar with the conductor loops among Fig. 6, the homogeneity that the structure that can reduce substrate back polymer is handled substrate influence schematic diagram.
Embodiment
Below in conjunction with Fig. 2～Fig. 7,, describe the present invention in detail by preferred specific embodiment.
The present invention is applicable to multiple plasma processing apparatus, as: plasma etching or plasma auxiliary chemical vapor deposition etc.The example that is applied as with plasma etching illustrates structure of the present invention below.As shown in Figure 2, for reduce a kind of embodiment of substrate back polymer among the present invention by insertion conductor loops 13.Among this embodiment, be used for substrate is carried out being provided with substrate 2 and pedestal 1 in the plasma etch chamber of plasma etching, on the upper surface 102 of this pedestal 1, also be provided with the substrate support 3 that is used for mounted substrate 2; This substrate support 3 comprises normally by ceramic material electrostatic chuck of making 3 and the DC electrode 4 that is embedded in this electrostatic chuck 3; After described substrate 2 is installed on this substrate support 3, its edge protrude in pedestal 1 upper surface 102 the edge or protrude in the edge of described substrate support 3).Also comprise the outer circumferential side that is arranged at this pedestal 1 in this plasma etching chamber and around the dead ring 11 of pedestal 1, it can be by ceramic material (as Si oxide, just quartzy, or aluminum oxide), and perhaps polymeric material (as polyimides) etc. is made; Preferably, use quartz material to make this dead ring; This dead ring 11 can be directly to be shelved on the pedestal 1 top peripheral surface 101, also can be fixed on the pedestal 1 top peripheral surface 101 by other connected modes (as: some screws).
In the plasma etch chamber of present embodiment, also has a structure of reduced substrate back polymer that is arranged on the described dead ring 11 and is arranged at the outer circumferential side 103 of pedestal 1 of the present invention; This structure comprises: focusing ring 12 and conductor loops 13; Wherein, described focusing ring 12 is around the outer circumferential side 103 of described pedestal 1; It has an extension 123, and it extends under the dorsal edge 20 of substrate 2.Focusing ring 12 can be made by semiconductor or conductor material, comprises silicon (for example monocrystalline silicon or polysilicon), silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)), aluminum oxide, aln precipitation, silicon nitride or quartz etc.Because in the plasma etching process of substrate, this focusing ring 12 will be directly exposed in the plasma, therefore, preferably high-purity material is made this focusing ring, for example silicon (for example monocrystalline silicon or polysilicon) or silicon carbide (for example silicon carbide by being obtained by chemical vapour deposition (CVD)) etc.
Described conductor loops 13 is inserted under the back side that is arranged on substrate 2, between focusing ring 12 and the pedestal 1, and the upper surface of the upper surface of this conductor loops 13 and described focusing ring extension 123 be positioned at substantially conplane, this conductor loops 13 is used to the variation that remedies tolerance and expand with heat and contract with cold also respectively and leave a suitable radial clearance between the outer circumferential side of focusing ring extension 123 and pedestal 1.This conductor loops 13 can be made by materials such as silicon, carborundum or graphite.
The present invention can reduce substrate back polymer on the one hand by conductor loops 13 is set, and also strengthens the homogeneity that substrate is handled on the other hand.On the one hand, as shown in Figure 2,, between focusing ring 12 under substrate 2 back sides and pedestal 1 (comprising electrostatic chuck 3), insert a conducting ring 13, focusing ring 12 and pedestal 1 are kept apart mutually in order to reduce the polymer that is produced at substrate 2 back sides; This conducting ring 13 respectively and between the focusing ring 12, pedestal 1 and and the back side of substrate 2 between have appropriate gap.In the hypobaric of vacuum processing chamber, no air exists between this gap, thereby can cut off heat conduction between the adjacent elements, make the heat of very hot focusing ring 12 can not be passed to conducting ring 13 and pedestal 1 at an easy rate, thereby greatly reduce the back temperature of substrate 2, and because these conducting ring 13 article on plasma bodies have minimum degree of exposing to the open air, so its temperature in etching process is lower than the temperature that reaches thermal cracking, can effectively prevent to arrive the carbide thermal cracking of substrate edge below, finally reach the molecule that reduces after the thermal cracking from newly at substrate 2 backside depositions and form the purpose of polymer.This conducting ring 13 is positioned on the dead ring 11, its also can with the upper surface of described dead ring 11 in conjunction with forming one; This conducting ring 13 can be made by conductor material or semi-conducting material.
On the other hand, conductor loops 13 also can strengthen the homogeneity that substrate is handled.As shown in Figure 6, it strengthens the schematic diagram of the homogeneity that substrate is handled for the structure that reduces substrate back polymer provided by the invention.The used material electrical properties of conductor loops 13 and electrostatic chuck 3 and the substrate 2 on it and peripheral focusing ring 12 is more approximate, all be conductor material (as: Si or SiC), so can obtain more uniform Potential Distributing to process conductor loops 13 with focusing ring 12 from radio frequency electrode 1 (radio-frequency power supply tends to be connected on the pedestal 1, thereby pedestal 1 also act as radio frequency electrode 1 simultaneously).It can make that the distribution of the equipotential line 30b substrate 2 edges near is more parallel with the plane of substrate 2, carries out plasma treatment thereby just can make ion in the plasma along the surface that the acceleration of 30a direction rushes at substrate 2 base be advanced sheet 2 with the perpendicular electric field line 30a of equipotential line 30b.Especially, marginal portion at substrate 2, because the existence of conducting ring 13, make also surperficial perpendicular with substrate 2 basically of electric field line 301 of substrate edge top, also just reduced inclination (tilting) situation of the device (as etched hole) of the processing of substrate edge.Thus, the present invention has also strengthened the homogeneity of plasma density distribution to a certain extent on the basis that minimizes the inclination of substrate profile.Because adopted the insertion ring 13 of conductor material, so more radio-frequency (RF) energy is passed to the edge of substrate 2 through conducting ring 13 from bottom electrode 1, so can not cause the plasma density distribution inequality of etching process ionic medium body, thereby guarantee etched homogeneity at substrate surface.
As with the comparison of Fig. 6, see also Fig. 7, Fig. 7 is for after conductor loops 13 replaces to dielectric collar 13 ' in the structure of the reduced substrate back polymer among Fig. 6, the homogeneity that this dielectric collar 13 ' is handled substrate influence schematic diagram.By shown in Figure 7, because the existence of dielectric collar 13 ', electromotive force sharply descends to the local time meeting through dielectric collar 13 ' from radio frequency electrode 1, thus, make the equipotential line 30b ' at substrate 2 edges sharply crooked at the marginal position of substrate 2, because electric field line 301 ' should be vertical mutually with equipotential line 30b ', electric field line 301 ' at the edge of substrate 2 becomes the relations of non-90 degree with substrate surface, ion in plasma can be sideling, and (that is: the angles that are non-90 degree) incide substrate 2 surfaces, device (as the etched hole) profile of the processing at processed substrate 2 edges occurs, also can cause the ion energy of incident different with density profile and then cause the etch effect heterogeneity simultaneously.
Under the prerequisite that does not break away from spirit of the present invention and essence, the present invention can also make various deformation.Such as, the described structure of Fig. 2 also selectively further comprises a cover ring 14, and described cover ring 14 is provided with and covers on the outer radius upper surface 111 of described dead ring 11 around focusing ring 12, and this cover ring is to be made by insulating material or conductor material.
As shown in Figure 2, described conductor loops 13 and focusing ring 12 all are arranged on the dead ring 11.This moment dead ring 11 the entire top surface be focused the ring 12 and conductor loops 13 cover, in etching process, can reduce the degree of exposure of the reactive materials of dead ring 11 top surface article on plasma bodies and/or this plasma.
Can also run through in described dead ring 11 and/or the pedestal 1 some cooling ducts are set, it can be with cooling fluid, (as: helium or water) is passed to the neighbouring surface of focusing ring 12 and/or conductor loops 13, for example this helium is passed to the gap between conductor loops 13 and pedestal 1 and the electrostatic chuck 3, and/or be passed to gap between focusing ring 12 and the conductor loops 13, and/or be passed to interface between focusing ring 12 and the dead ring 11, in order to further to reduce the temperature of substrate back in the etching process fast, reduce heat, thereby further reduce the polymer that etching gas and/or volatile byproducts are produced in the substrate back deposition.
In another embodiment of the invention, as shown in Figure 3, structure setting in this plasma etching chamber and operation principle are with structure similar shown in Figure 2, difference only is, dead ring 11 top surfaces only comprise focusing ring 12 among Fig. 3, perhaps, and in other words, the described cover ring 14 of Fig. 2 is the parts that extend radially outwardly that form on focusing ring 12, and promptly cover ring 14 is integrally formed with focusing ring 12 in Fig. 3.At this moment, this cover ring 14 and focusing ring 12 are made by identical materials.
In another embodiment of the invention, as shown in Figure 4, structure setting in this plasma etching chamber and operation principle are with structure similar shown in Figure 2, difference only is that described focusing ring is separated to form first focusing ring 121 and second focusing ring 122 that is positioned at its below along the upper surface of its extension 123; Wherein, this first focusing ring 121 is the outer circumferential sides that are compassingly set at described pedestal 1; The extension 123 that described second focusing ring 122 is comprised still extends under the edge at substrate 2 back sides, the upper surface of this second focusing ring 122 is the upper surface of original focusing ring extension 123, that is to say, in the present embodiment, the upper surface of the upper surface of this second focusing ring 122 and conductor loops 13 be positioned at substantially conplane.
Above-mentioned embodiment as shown in Figures 2 and 3, when substrate is carrying out in the plasma etching process, indoor (by one or more gas compositions) applies energy so that gas excitation is formed plasma to etching reaction gas at plasma, and existence can be used for producing and keeping intermediate density or highdensity plasma in this plasma chamber radio frequency (RF) energy, microwave energy and/or magnetic field; At this moment, substrate 2 produces a large amount of heat in etching process, because conductor loops 13 has minimum degree of exposing to the open air, while is owing to the booster action of the refrigerating gases of importing by the cooling duct such as helium, the temperature of this conductor loops 13 can not reach and make the height of carbide thermal cracking, the formation of polymer of evaporating and being deposited on subsequently the back side of substrate 2 so can make the carbide that arrives substrate edge can not run into that temperature is higher than the parts of thermal cracking, thus can significantly reduce the polymer that is formed on substrate back.
Further, in embodiment as shown in Figure 4, because it has adopted the structure of upper and lower two sections focusing rings, so first focusing ring 121 that is positioned at the top can be used as the thermodynamic barrier of below second focusing ring 122 at more close substrate 2 back sides, because hot transmission will become slower in vacuum environment, again owing to existing gap between the upper and lower focusing ring, to directly cause heat conduction to be interrupted, so have no progeny in the heat that is passed to down focusing ring 122 by last focusing ring 121 originally is limited, following focusing ring 122 can remain on lower temperature.Thus, substrate is being carried out in the plasma etch processes, the temperature of following focusing ring 122 can not reach and make the height of carbide thermal cracking on it, so can further limit because of the formation of the carbide thermal cracking hydatogenesis on the following focusing ring 122, thereby more effective minimizing is formed on the polymer at substrate 2 back sides at the polymer of substrate back.
As shown in Figure 5, for reducing a kind of embodiment of substrate back polymer by the conduction focusing ring is set among the present invention.This embodiment is a kind of in conjunction with using to Fig. 2 and embodiment shown in Figure 4 in fact, some parts in the plasma etch chamber, comprise pedestal 1, substrate 2, electrostatic chuck 3 and be embedded in DC electrode 4 in this electrostatic chuck 3, and dead ring 11, cover ring 14 and be compassingly set at top first focusing ring 121 of the outer circumferential side of pedestal 1, it is provided with all with aforementioned identical as the method to set up among Fig. 2 or the embodiment shown in Figure 4, and the technical characterictic that is had is also suitable with the technique effect that can reach.In the present embodiment, just conductor loops in embodiment illustrated in fig. 4 13 and second focusing ring 122 that is positioned at substrate back are combined into one, the conductor focusing ring 131 (as shown in Figure 5) that formation is made by conductor material, this conductor focusing ring 131 can be made by materials such as silicon, carborundum or graphite.In the described coating that also can insert skim up and down between the focusing ring, this thin layer has the effect of further prevention heat transferred.It is in vacuum environment that the gap is set between the focusing ring of these 2 segmentations, reaches the effect of better heat insulation and heat control.
Because present embodiment combines the architectural feature of inserting conductor loops and segmentation focusing ring, formed the conductor below focusing ring after the segmentation, thereby simplifying on the basis that total forms, also can reach comparatively complex embodiments (Fig. 2, Fig. 3 and Fig. 4) the constructed effect that can reach of said structure.Promptly limit because of the formation of carbide thermal cracking hydatogenesis, effectively reduce the polymer that is formed on substrate back at the polymer of substrate back.And, this conduction focusing ring be arranged so that it is minimizing the RF coupling that allows on the basis that the substrate profile tilts between focusing ring and the electrode, so can not cause the density distribution inequality of etching process ionic medium body, thereby guarantee etched homogeneity at substrate surface.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (28)
1. structure that can reduce substrate back polymer, it is compassingly set at the outer circumferential side of the pedestal (1) of the substrate (2) in the plasma process chamber, the edge of described substrate (2) protrudes in the edge of the upper surface (102) of described pedestal (1), be characterised in that the structure of described minimizing substrate back polymer comprises:
One focusing ring (12), it is compassingly set at the outer circumferential side of described pedestal (1); This focusing ring (12) has an extension (123), and it extends under the edge at substrate (2) back side at least in part; And
One conductor loops (13), it is arranged under the back side of substrate (2), and between the extension (123) of the outer circumferential side of described pedestal (1) and described focusing ring (12).
2. the structure that reduces substrate back polymer as claimed in claim 1 is characterized in that, described conductor loops (13) is made by silicon, carborundum or graphite.
3. the structure that reduces substrate back polymer as claimed in claim 1 is characterized in that, described focusing ring (12) is made by silicon, silicon carbide, aluminum oxide, aln precipitation, silicon nitride or quartz.
4. the structure that reduces substrate back polymer as claimed in claim 3 is characterized in that, described focusing ring (12) is separated to form first focusing ring (121) and second focusing ring (122) along the upper surface of its extension (123); Wherein,
Described first focusing ring (121) is compassingly set at the outer circumferential side of described pedestal (1);
Described second focusing ring (122) comprises extension (123), and it extends under the edge at substrate (2) back side at least in part.
5. the structure that reduces substrate back polymer as claimed in claim 1 is characterized in that, the upper surface of the upper surface of described conductor loops (13) and described focusing ring extension (123) be positioned at conplane.
6. the structure that reduces substrate back polymer as claimed in claim 1 is characterized in that, also includes the dead ring (11) of the outer circumferential side that is compassingly set at described pedestal (1) in the described plasma processing chamber; Described focusing ring (12) and conductor loops (13) are arranged on this dead ring (11), and cover the top surface of whole dead ring (11).
7. the structure that reduces substrate back polymer as claimed in claim 6 is characterized in that, also comprises the cover ring (14) that an outer circumferential side that centers on focusing ring (12) is provided with, and it covers on the outer radius upper surface (111) of described dead ring (11).
8. the structure that reduces substrate back polymer as claimed in claim 7 is characterized in that, described cover ring (14) is to go up the part that extends radially outwardly that forms at focusing ring (12), and promptly cover ring (14) is integrally formed with focusing ring (12).
9. the structure that reduces substrate back polymer as claimed in claim 6 is characterized in that, also comprises some cooling ducts that are arranged in the dead ring (11) of running through, and it transmits cooling object to focusing ring (12) and/or conductor loops (13).
10. a plasma processing chamber is characterized in that, comprises substrate (2), is used to place the pedestal (1) of this substrate (2), and the structure of reduced substrate back polymer that is compassingly set at the outer circumferential side of this pedestal (1); Wherein,
The edge of described substrate (2) protrudes in the edge of the upper surface (102) of described pedestal (1);
The structure of described minimizing substrate back polymer comprises:
One focusing ring (12), it is compassingly set at the outer circumferential side of described pedestal (1); This focusing ring (12) has an extension (123), and it extends under the edge at substrate (2) back side at least in part; And
One conductor loops (13), it is arranged under the back side of substrate (2), and between the extension (123) of the outer circumferential side of described pedestal (1) and described focusing ring (12).
11. plasma processing chamber as claimed in claim 10, it is characterized in that, described pedestal (1) also comprises one and is positioned at substrate support on its upper surface (102), that be used for mounted substrate (2), and this substrate support comprises electrostatic chuck (3) and is embedded in the interior DC electrode (4) of this electrostatic chuck (3).
12. plasma processing chamber as claimed in claim 10 is characterized in that, described focusing ring (12) is separated to form first focusing ring (121) and second focusing ring (122) along the upper surface of its extension (123); Wherein,
Described first focusing ring (121) is compassingly set at the outer circumferential side of described pedestal (1);
Described second focusing ring (122) comprises extension (123), and it extends under the edge at substrate (2) back side at least in part.
13. plasma processing chamber as claimed in claim 10 is characterized in that, the upper surface of the upper surface of described conductor loops (13) and described focusing ring extension (123) be positioned at conplane.
14. plasma processing chamber as claimed in claim 10 is characterized in that, also includes the dead ring (11) of the outer circumferential side that is compassingly set at described pedestal (1) in this plasma process chamber; Described focusing ring (12) and conductor loops (13) are arranged on this dead ring (11), and cover the top surface of whole dead ring (11).
15. plasma processing chamber as claimed in claim 14, it is characterized in that, the described structure that reduces substrate back polymer also comprises the cover ring (14) that an outer circumferential side that centers on focusing ring (12) is provided with, and it covers on the outer radius upper surface (111) of described dead ring (11).
16. plasma processing chamber as claimed in claim 15 is characterized in that, described cover ring (14) is to go up the part that extends radially outwardly that forms at focusing ring (12), and promptly cover ring (14) is integrally formed with focusing ring (12).
17. plasma processing chamber as claimed in claim 14, it is characterized in that, also comprise some cooling ducts that are arranged in dead ring (11) and/or the pedestal (1) of running through in this plasma process chamber, it transmits cooling object to focusing ring (12) and/or conductor loops (13).
18. the structure that can reduce substrate back polymer, it is compassingly set at the outer circumferential side of the pedestal (1) of the substrate (2) in the plasma process chamber, and the edge of described substrate (2) protrudes in the edge of the upper surface (102) of described pedestal (1); This structure that can reduce substrate back polymer comprises:
One first focusing ring (121), it is compassingly set at the outer circumferential side of described pedestal (1); And
One second focusing ring (131), it is positioned at the below of described first focusing ring (121), and an end (123) of this second focusing ring (131) extends under the edge at substrate (2) back side at least in part;
Described second focusing ring (131) is made by conductor material.
19. the structure that reduces substrate back polymer as claimed in claim 18 is characterized in that, described second focusing ring (131) is made by silicon, carborundum or graphite.
20. the structure that reduces substrate back polymer as claimed in claim 18 is characterized in that, described first focusing ring (121) is made by silicon, silicon carbide, aluminum oxide, aln precipitation, silicon nitride or quartz.
21. the structure that reduces substrate back polymer as claimed in claim 18 is characterized in that, also includes the dead ring (11) of the outer circumferential side that is compassingly set at described pedestal (1) in the described plasma processing chamber; Described second focusing ring (131) is arranged on this dead ring (11), and covers the top surface of whole dead ring (11).
22. the structure that reduces substrate back polymer as claimed in claim 21, it is characterized in that, also comprise the cover ring (14) that an outer circumferential side that centers on first focusing ring (121) and second focusing ring (131) is provided with, it covers on the outer radius upper surface (111) of described dead ring (11).
23. the structure that reduces substrate back polymer as claimed in claim 21 is characterized in that, also comprises some cooling ducts that are arranged in the dead ring (11) of running through, it transmits cooling object to the second focusing ring (131).
24. a plasma processing chamber is characterized in that, comprises substrate (2), is used to place the pedestal (1) of this substrate (2), and the structure of reduced substrate back polymer that is compassingly set at the outer circumferential side of this pedestal (1); Wherein,
The edge of described substrate (2) protrudes in the edge of the upper surface (102) of described pedestal (1);
The structure of described minimizing substrate back polymer comprises:
One first focusing ring (121), it is compassingly set at the outer circumferential side of described pedestal (1); And
One second focusing ring (131), it is positioned at the below of described first focusing ring (121), and an end (123) of this second focusing ring (131) extends under the edge at substrate (2) back side at least in part;
Described second focusing ring (13) is made by conductor material.
25. plasma processing chamber as claimed in claim 24, it is characterized in that, described pedestal (1) also comprises one and is positioned at substrate support on its upper surface (102), that be used for mounted substrate (2), and this substrate support comprises electrostatic chuck (3) and is embedded in the interior DC electrode (4) of this electrostatic chuck (3).
26. plasma processing chamber as claimed in claim 24 is characterized in that, also includes the dead ring (11) of the outer circumferential side that is compassingly set at described pedestal (1) in the described plasma processing chamber; Described second focusing ring (131) is arranged on this dead ring (11), and covers the top surface of whole dead ring (11).
27. plasma processing chamber as claimed in claim 26, it is characterized in that, the described structure that reduces substrate back polymer also comprises the cover ring (14) that an outer circumferential side that centers on first focusing ring (121) and second focusing ring (131) is provided with, and it covers on the outer radius upper surface (111) of described dead ring (11).
28. plasma processing chamber as claimed in claim 26 is characterized in that, also comprises some cooling ducts that are arranged in dead ring (11) and/or the pedestal (1) of running through in this plasma process chamber, it transmits cooling object to the second focusing ring (131).
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| CN2009100560873A CN101989544B (en) | 2009-08-07 | 2009-08-07 | Structure capable of reducing substrate back polymer |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |