CN106206255B - Trench-gate device grid oxygen with shield grid is super to be permitted to hold time processing method - Google Patents

Trench-gate device grid oxygen with shield grid is super to be permitted to hold time processing method Download PDF

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Publication number
CN106206255B
CN106206255B CN201610620535.8A CN201610620535A CN106206255B CN 106206255 B CN106206255 B CN 106206255B CN 201610620535 A CN201610620535 A CN 201610620535A CN 106206255 B CN106206255 B CN 106206255B
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grid
grid oxygen
trench
permitted
super
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CN106206255A (en
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周颖
丛茂杰
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The super appearance time processing method of being permitted of the trench-gate device grid oxygen with shield grid that the invention discloses a kind of includes the following steps: Step 1: forming the trench-gate device grid oxygen with shield grid.Grid oxygen is formed in the side of the top section of groove, is formed with shielding polysilicon in the bottom stage of groove.Step 2: being compared to the first dead time before polysilicon gate growth and after the completion of calculating grid oxygen with the time is held perhaps.Step 3: the first dead time, which was greater than when being permitted to hold the time, carries out an annealing process to improve the quality of grid oxygen.Step 4: growing polycrystalline silicon grid, the top section of the groove is filled up completely by polysilicon gate.The present invention can eliminate the super appearance time adverse effect perhaps of grid oxygen, can be improved product yield, reduce process costs.

Description

Trench-gate device grid oxygen with shield grid is super to be permitted to hold time processing method
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture methods, have shield grid (Shield more particularly to one kind Gate Trench, SGT) trench-gate device grid oxygen super permitted to hold time processing method.
Background technique
The gate structure of trench-gate device with shield grid is divided into two layers, is respectively formed in the screen of the bottom stage of groove It covers polysilicon and is formed in the polysilicon gate of the top section of groove, shield side and the bottom table of the bottom stage of polysilicon and groove Isolation has dielectric layer such as oxide layer between face, and isolation has inter polysilicon medium between shielding polysilicon and the bottom of polysilicon gate Such as inter polysilicon oxide layer (IPO), isolation has grid oxygen i.e. gate oxidation to layer between polysilicon gate and the side of the top section of groove Layer.Grid oxygen is typically all to be formed using thermal oxidation technology, and polysilicon and shielding polysilicon bottom are shielded before grid oxygen formation Dielectric layer and inter polysilicon dielectric layer all formed, grid oxygen formation after carry out polysilicon gate deposit.
On the production line of semiconductor integrated circuit manufacture, forms the equipment of grid oxygen and form the equipment of polysilicon gate not Identical, product needs to remove from the equipment for forming grid oxygen after forming grid oxygen, places into the equipment for forming polysilicon gate later Middle carry out polycrystalline silicon growth.Namely there are a dead times before starting to grow to polysilicon gate after grid oxygen completion, and The product for needing to produce on semiconductor integrated circuit manufacturing line is numerous and various production equipments to may require that shutdown carries out pre- Anti- maintenance or breakdown maintenance, thus sometimes grid oxygen to the dead time between polysilicon gate can be too long.
For grid oxygen to the length of the dead time between polysilicon gate, defined in existing processing method one permitted hold when Between, when the dead time being less than or equal to be permitted to hold the time, allow directly to carry out subsequent polysilicon gate growth technique.
But when the dead time being greater than the appearance time perhaps, existing processing method includes two kinds: first method is directly to put Row (release), second method are to be done over again (Rework) to grid oxygen.
The direct clearance of first method, which refers to, directly carries out subsequent polysilicon gate growth, directly carries out subsequent polycrystalline After Si-gate growth, discovery has the IGSS i.e. risk of grid leak electricity, the reason is that quality is deteriorated after grid oxygen exposure duration is too long, defect Increase, to cause IGSS.Experiment shows when the dead time being less than or equal to be permitted to hold the time, the IGSS of device be 1E-8A~ 1E-7A, and when the dead time being greater than the appearance time perhaps, the IGSS of device can reach 1E-5A, and electric leakage situation sharply deteriorates.
Being done over again to grid oxygen for second method etches away grid oxygen as first, then the one layer of new grid oxygen that regrow. This, method has the characteristics that complex process first.Secondly, in the trench-gate device with shield grid, before grid oxygen is formed It has formd shielding polysilicon and has shielded the dielectric layer and inter polysilicon dielectric layer of polysilicon bottom, and shielded polysilicon bottom The dielectric layer and inter polysilicon dielectric layer in portion are often all made of oxide layer, the meeting when performing etching and regrowing to grid oxygen The understructure formed is impacted, the grid oxygen of the trench-gate device with shield grid is returned in a conventional method Work is also unrealistic.
From the foregoing, it will be observed that above-mentioned the first and second method can all bring deleterious effect, this can all substantially reduce product Yield, largely scrap meeting so that manufacturing cost sharply increases, therefore it is really significant how to solve the above problems.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of super Xu Rongshi of trench-gate device grid oxygen with shield grid Between processing method, can eliminate that grid oxygen is super to be permitted to hold time adverse effect, can be improved product yield, reduce technique at This.
Permitted to hold at the time in order to solve the above technical problems, the trench-gate device grid oxygen provided by the invention with shield grid is super Reason method includes the following steps:
Step 1: forming the trench-gate device grid oxygen with shield grid；The grid oxygen is formed in the side of the top section of groove Face is formed with shielding polysilicon in the bottom stage of the groove, between shielding polysilicon and the bottom stage side of groove It is formed with the first spacer medium layer；Inter polysilicon dielectric layer is formed at the top of the shielding polysilicon.
Step 2: calculate the first dead time before arriving polysilicon gate growth after the completion of the grid oxygen, compare this first Dead time and Xu Rong time directly carry out subsequent step if first dead time is less than or equal to the appearance time perhaps Rapid four；If first dead time is greater than the appearance time perhaps, directly progress subsequent step three.
Step 3: carrying out an annealing process to improve the quality of the grid oxygen；The annealing process completion carries out immediately Subsequent step four waits progress subsequent step four after second dead time, and second dead time is less than or equal to institute It states and holds the time perhaps.
Step 4: growing polycrystalline silicon grid, the top section of the groove is filled up completely by the polysilicon gate.
A further improvement is that the appearance time perhaps is 9 hours.
A further improvement is that the temperature of the annealing process in step 3 is 900 DEG C~1200 DEG C, the time is 10 points Clock~100 minute.
A further improvement is that the ventilated body of annealing process is nitrogen.
A further improvement is that the grid oxygen is formed using thermal oxidation technology.
A further improvement is that the first spacer medium layer is oxide layer.
A further improvement is that the inter polysilicon dielectric layer is oxide layer.
A further improvement is that the groove is to be formed by etch semiconductor substrates.
A further improvement is that the semiconductor substrate is silicon substrate.
A further improvement is that the maximum value of first dead time was up to 30 hours or more.
The present invention realizes the dead time formed before the deposit of rear polysilicon gate to grid oxygen and manages, and can be in grid oxygen Dead time after formation before polysilicon gate deposit, which is greater than, is permitted to hold time progress respective handling, the respective handling carried out in the present invention Only by an annealing process come the quality to improve grid oxygen, simple process and can not only to eliminate the dead time too long right The influence of the quality of grid oxygen influences the IGSS of device in turn but also will not cause shadow to the fabric that front has been formed It rings, owns so the present invention can eliminate possessed by existing first method and second method pointed in the technology of the back side Defect finally can make the yield of product be guaranteed, can prevent because grid oxygen after dead time it is too long and caused by report It is useless to occur, so as to substantially reduce total production cost.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Fig. 1 is flow chart of the embodiment of the present invention.
Specific embodiment
There is the super appearance time processing method of being permitted of the trench-gate device grid oxygen of shield grid of the embodiment of the present invention to include the following steps:
Step 1: forming the trench-gate device grid oxygen with shield grid；The grid oxygen is formed in the side of the top section of groove Face is formed with shielding polysilicon in the bottom stage of the groove, between shielding polysilicon and the bottom stage side of groove It is formed with the first spacer medium layer；Inter polysilicon dielectric layer is formed at the top of the shielding polysilicon.
In the embodiment of the present invention, the grid oxygen is formed using thermal oxidation technology.The first spacer medium layer is oxide layer. The inter polysilicon dielectric layer is oxide layer.The groove is to be formed by etch semiconductor substrates such as silicon substrate.
Step 2: calculate the first dead time before arriving polysilicon gate growth after the completion of the grid oxygen, compare this first Dead time and Xu Rong time directly carry out subsequent step if first dead time is less than or equal to the appearance time perhaps Rapid four；If first dead time is greater than the appearance time perhaps, directly progress subsequent step three.
In the embodiment of the present invention, the appearance time perhaps is 9 hours.The maximum value of first dead time can be up to 30 hours More than.
Step 3: carrying out an annealing process to improve the quality of the grid oxygen；The annealing process completion carries out immediately Subsequent step four waits progress subsequent step four after second dead time, and second dead time is less than or equal to institute It states and holds the time perhaps.
In the embodiment of the present invention, the temperature of the annealing process is 900 DEG C~1200 DEG C, the time is 10 minutes~100 points Clock, the ventilated body of annealing process are nitrogen.
Step 4: growing polycrystalline silicon grid, the top section of the groove is filled up completely by the polysilicon gate.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered It is considered as protection scope of the present invention.

Claims (9)

  1. Permitted to hold time processing method 1. a kind of trench-gate device grid oxygen with shield grid is super, which is characterized in that including walking as follows It is rapid:
    Step 1: forming the trench-gate device grid oxygen with shield grid；The grid oxygen is formed in the side of the top section of groove, The bottom stage of the groove is formed with shielding polysilicon, is formed between shielding polysilicon and the bottom stage side of groove First spacer medium layer；Inter polysilicon dielectric layer is formed at the top of the shielding polysilicon；
    Step 2: arriving the first dead time before polysilicon gate growth after the completion of calculating the grid oxygen, compare first pause Time and Xu Rong time, if first dead time is less than or equal to the appearance time perhaps, directly progress subsequent step four； If first dead time is greater than the appearance time perhaps, directly progress subsequent step three；
    Step 3: carrying out an annealing process to improve the quality of the grid oxygen；The annealing process completion carries out subsequent immediately Step 4 waits progress subsequent step four after second dead time, and second dead time is less than or equal to described permitted Hold the time；The ventilated body of annealing process is nitrogen；
    Step 4: growing polycrystalline silicon grid, the top section of the groove is filled up completely by the polysilicon gate.
  2. Permitted to hold time processing method 2. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the appearance time perhaps is 9 hours.
  3. Permitted to hold time processing method, feature 3. the trench-gate device grid oxygen with shield grid is super as claimed in claim 1 or 2 Be: the temperature of the annealing process in step 3 is 900 DEG C~1200 DEG C, the time is 10 minutes~100 minutes.
  4. Permitted to hold time processing method 4. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the grid oxygen is formed using thermal oxidation technology.
  5. Permitted to hold time processing method 5. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the first spacer medium layer is oxide layer.
  6. Permitted to hold time processing method 6. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the inter polysilicon dielectric layer is oxide layer.
  7. Permitted to hold time processing method 7. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the groove is to be formed by etch semiconductor substrates.
  8. Permitted to hold time processing method 8. the trench-gate device grid oxygen with shield grid is super as claimed in claim 7, feature exists In: the semiconductor substrate is silicon substrate.
  9. Permitted to hold time processing method 9. the trench-gate device grid oxygen with shield grid is super as described in claim 1, feature exists In: the maximum value of first dead time was up to 30 hours or more.
CN201610620535.8A 2016-08-01 2016-08-01 Trench-gate device grid oxygen with shield grid is super to be permitted to hold time processing method Active CN106206255B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728258A (en) * 2008-10-24 2010-06-09 中芯国际集成电路制造(上海)有限公司 Manufacturing methods of gate oxide and semiconductor device
CN103400301A (en) * 2013-08-14 2013-11-20 上海华力微电子有限公司 Control method and system for Q-time interval products
CN105097424A (en) * 2015-07-22 2015-11-25 上海华力微电子有限公司 Dispatching method and system for semiconductor process production line

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8497549B2 (en) * 2007-08-21 2013-07-30 Fairchild Semiconductor Corporation Method and structure for shielded gate trench FET

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728258A (en) * 2008-10-24 2010-06-09 中芯国际集成电路制造(上海)有限公司 Manufacturing methods of gate oxide and semiconductor device
CN103400301A (en) * 2013-08-14 2013-11-20 上海华力微电子有限公司 Control method and system for Q-time interval products
CN105097424A (en) * 2015-07-22 2015-11-25 上海华力微电子有限公司 Dispatching method and system for semiconductor process production line

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