CN103436884A - Copper-plated indium tin oxide film etching technology - Google Patents
Copper-plated indium tin oxide film etching technology Download PDFInfo
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- CN103436884A CN103436884A CN2013103949038A CN201310394903A CN103436884A CN 103436884 A CN103436884 A CN 103436884A CN 2013103949038 A CN2013103949038 A CN 2013103949038A CN 201310394903 A CN201310394903 A CN 201310394903A CN 103436884 A CN103436884 A CN 103436884A
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- copper
- indium tin
- tin oxide
- deionized water
- oxide film
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Abstract
The invention relates to touch screen processing and particularly relates to a copper-plated indium tin oxide film etching technology. The etching technology comprises the following steps of: 1. silkscreening UV (ultraviolet) acid-proof ink on a copper-plated indium tin oxide film; 2. curing the copper-plated indium tin oxide film with an ultraviolet lamp; 3. preparing a copper-etching solution by means of evenly mixing H2O2, HCl, tolyltriazole and deionized water in a mole ratio of 10:3:1:50; 4. soaking the copper-plated indium tin oxide film in the copper-etching solution and taking the film out after 60 seconds; 5. preparing an indium tin oxide etching solution by means of evenly mixing oxalic acid, 2-methyl-imidazoline and deionized water in a mole ratio of 10:1:100; 6. soaking the copper-plated indium tin oxide film in the indium tin oxide etching solution and taking the film out after 60 seconds; and 7. soaking the copper-plated indium tin oxide film in a 3% NaOH solution and taking the film out after 60 seconds. The etching technology is simple, low in requirements on equipment and easy to control, and can meet various requirements on process reduction, cost lowering, productivity increase and the like.
Description
Technical field
The present invention relates to the touch-screen complete processing, relate in particular to a kind of copper facing indium tin oxides film etch process.
Background technology
Tin indium oxide pattern line-width, line-spacing that traditional dry method etch technology is made > 80 μ m, and need silk-screen edge-silver line after etching.Therefore, there is complex process in traditional dry method etch technology, the defect such as live width and line-spacing are wide, cost is high and production capacity is low.In view of to live width, the narrow limit of line-spacing, reduce operation, save manpower, reduce costs, optimize many-sided requirements such as touch-screen product performance, certainly will to be improved traditional technology.
Summary of the invention
Defect and deficiency in view of above-mentioned prior art exists, the invention provides a kind of copper facing indium tin oxides film etch process.This process using wet method is carried out etching to the copper facing indium tin oxides film; at first by the silk-screen acid-proof ink, will not need etched part to protect; adopt the first etch copper rete of copper etchant solution of preparation, then adopt the tin indium oxide etching solution etching oxidation indium tin rete of preparation.
The technical scheme that the present invention takes is: a kind of copper facing indium tin oxides film etch process, it is characterized in that, and comprise the steps:
Step 1: adopt 350 purpose polyester half tones silk screen printing UV acid-proof ink on the copper facing indium tin oxides film, apply the zone needed protection;
Step 2: it is curing that by silk-screen, good copper facing indium tin oxides film carries out ultraviolet lamp, solidifies energy 1000mj/cm
2, set time 2min;
Step 3: the copper etchant solution preparation, by H
2o
2, HCl, tolyltriazole, deionized water be according to mixing under mol ratio 10:3:1:50 room temperature;
Step 4: the copper film layer etching, by the copper etchant solution of 25 ± 5 ℃ of copper facing indium tin oxides film immersions, after 60 ± 5s, take out, use deionized water rinsing;
Step 5: tin indium oxide etching solution preparation, by oxalic acid, glyoxal ethyline quinoline, deionized water according to mixing under mol ratio 10:1:100 room temperature;
Step 6: the etching of tin indium oxide rete, by the tin indium oxide etching solution of 25 ± 5 ℃ of copper facing indium tin oxides film immersions, after 60 ± 5s, take out, use deionized water rinsing;
Step 7: demoulding, the copper facing indium tin oxides film is immersed in the solution that concentration is 3% NaOH, take out after soaking 60 ± 5s under room temperature, use deionized water rinsing.
The beneficial effect that the present invention produces is: this technique be take the copper facing indium tin oxides film as raw material; carry out wet etching after protecting printing ink by printing; can realize 30 μ m live widths, line-spacing without gold-tinted equipment, and figure and the production of edge-silver line settles at one go, saved silk-screen frame silver Wiring technology.This technique is simple, low for equipment requirements and be easy to control, and can meet the minimizing operation, reduce costs, improves many-sided requirement such as production capacity.
Embodiment
For a more clear understanding of the present invention, below in conjunction with embodiment, the present invention is further described, its step is as follows:
Step 1: adopt 350 purpose polyester half tones silk screen printing UV acid-proof ink (the UV acid-proof ink is the known commodity in market) on the copper facing indium tin oxides film, apply the zone needed protection.
Step 2: the copper facing indium tin oxides film that screen printing is brushed carries out ultraviolet lamp and solidifies, and solidifies energy 1000mj/cm
2, set time 2min;
Step 3: copper etchant solution (etching solution 1) preparation, by H
2o
2, HCl, tolyltriazole, deionized water be according to mixing under mol ratio 10:3:1:50 room temperature;
Step 4: the copper film layer etching, by the copper etchant solution of 25 ℃ of copper facing indium tin oxides film immersions, after 60s, take out, use deionized water rinsing.This step etch copper rete, do not damage the tin indium oxide rete.
Step 5: tin indium oxide etching solution (etching solution 2) preparation, by oxalic acid, glyoxal ethyline quinoline, deionized water according under mol ratio 10:1:100 room temperature, mixing and get final product.
Step 6: the etching of tin indium oxide rete, by the tin indium oxide etching solution of 25 ℃ of copper facing indium tin oxides film immersions, after 60s, take out, use deionized water rinsing.This step etching oxidation indium tin rete, do not damage copper film layer.
Step 7: demoulding, the copper facing indium tin oxides film is immersed in the solution that concentration is 3% NaOH, under room temperature, after immersion 60s, take out, use deionized water rinsing.
Above technique all completes on known common equipment in the field of business.
Test copper facing indium tin oxides film performance perameter sees the following form:
The 1# product shows by transmitance and the test of sheet resistance value: etching solution 1 can etch away copper fully, and, to tin indium oxide rete not damaged, the 2# product shows by transmitance and the test of sheet resistance value: etching solution 2 can be by the complete etching of indium tin oxides film.
Claims (1)
1. a copper facing indium tin oxides film etch process, is characterized in that, comprises the steps:
Step 1: adopt 350 purpose polyester half tones silk screen printing UV acid-proof ink on the copper facing indium tin oxides film, apply the zone needed protection;
Step 2: the copper facing indium tin oxides film that screen printing is brushed carries out ultraviolet lamp and solidifies, and solidifies energy 1000mj/cm
2, set time 2min;
Step 3: the copper etchant solution preparation, by H
2o
2, HCl, tolyltriazole, deionized water be according to mixing under mol ratio 10:3:1:50 room temperature;
Step 4: the copper film layer etching, by the copper etchant solution of 25 ± 5 ℃ of copper facing indium tin oxides film immersions, after 60 ± 5s, take out, use deionized water rinsing;
Step 5: tin indium oxide etching solution preparation, by oxalic acid, glyoxal ethyline quinoline, deionized water according to mixing under mol ratio 10:1:100 room temperature;
Step 6: the etching of tin indium oxide rete, by the tin indium oxide etching solution of 25 ± 5 ℃ of copper facing indium tin oxides film immersions, after 60 ± 5s, take out, use deionized water rinsing;
Step 7: demoulding, the copper facing indium tin oxides film is immersed in the solution that concentration is 3% NaOH, take out after soaking 60 ± 5s under room temperature, use deionized water rinsing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103949038A CN103436884A (en) | 2013-09-02 | 2013-09-02 | Copper-plated indium tin oxide film etching technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103949038A CN103436884A (en) | 2013-09-02 | 2013-09-02 | Copper-plated indium tin oxide film etching technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103436884A true CN103436884A (en) | 2013-12-11 |
Family
ID=49690596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103949038A Pending CN103436884A (en) | 2013-09-02 | 2013-09-02 | Copper-plated indium tin oxide film etching technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109136926A (en) * | 2018-08-31 | 2019-01-04 | 深圳市华星光电技术有限公司 | Lithographic method and etching device for copper-molybdenum film layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1324959A (en) * | 1999-10-29 | 2001-12-05 | 希普雷公司 | Supplement method for bath |
| CN101594744A (en) * | 2008-05-30 | 2009-12-02 | 财团法人工业技术研究院 | On bendable substrate, make the method and the protection printing ink thereof of conductive pattern |
| CN102879998A (en) * | 2012-09-18 | 2013-01-16 | 深圳力合光电传感技术有限公司 | Method for etching touch screen |
| CN102902389A (en) * | 2011-07-27 | 2013-01-30 | 比亚迪股份有限公司 | Method for manufacturing touch sensor |
-
2013
- 2013-09-02 CN CN2013103949038A patent/CN103436884A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1324959A (en) * | 1999-10-29 | 2001-12-05 | 希普雷公司 | Supplement method for bath |
| CN101594744A (en) * | 2008-05-30 | 2009-12-02 | 财团法人工业技术研究院 | On bendable substrate, make the method and the protection printing ink thereof of conductive pattern |
| CN102902389A (en) * | 2011-07-27 | 2013-01-30 | 比亚迪股份有限公司 | Method for manufacturing touch sensor |
| CN102879998A (en) * | 2012-09-18 | 2013-01-16 | 深圳力合光电传感技术有限公司 | Method for etching touch screen |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109136926A (en) * | 2018-08-31 | 2019-01-04 | 深圳市华星光电技术有限公司 | Lithographic method and etching device for copper-molybdenum film layer |
| WO2020042257A1 (en) * | 2018-08-31 | 2020-03-05 | 深圳市华星光电技术有限公司 | Etching method and etching device for copper molybdenum film layer |
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Application publication date: 20131211 |