CN101968697B - The method of manufacture grid pattern type contact panel - Google Patents
The method of manufacture grid pattern type contact panel Download PDFInfo
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- CN101968697B CN101968697B CN201010252112.8A CN201010252112A CN101968697B CN 101968697 B CN101968697 B CN 101968697B CN 201010252112 A CN201010252112 A CN 201010252112A CN 101968697 B CN101968697 B CN 101968697B
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- conductive material
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Electric Cables (AREA)
- Manufacture Of Switches (AREA)
- Laminated Bodies (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention discloses a kind of method of manufacture grid pattern type contact panel, belong to contact panel process technique field.The present invention uses photoresistance technology to form lattice non-conducting areas to reduce etching mark to transparent conductive material etching, reduces etching waste liquor and is beneficial to environmental protection; Carry out plated metal conductive material again, conductive metal material pastes photoresistance film, exposure imaging etching forms metal routing, simple to operately can reduce manufacturing cost.
Description
Technical field
The present invention relates to a kind of method of manufacture grid pattern type contact panel, belong to contact panel process technique field.
Background technology
If the processing mode of contact panel is the operation taking successively to fit, easily cause laminating contraposition out of true, and increase thickness and the weight of contact panel, reduce penetrability and the touch-control susceptibility of touch-control product, product quality is difficult to be greatly improved.During processing transparent conductive material, because the corresponding line of induction pattern that is shaped needs to etch away a large amount of transparent conductive material, cause a large amount of etching waste liquors, environmental pollution is serious; And the aberration of contact panel is large, etching mark is obvious.
The present invention obtains corresponding pattern by adopting photoresistance technique can carry out photoresistance etching to the different depth aspect of contact panel; Carry out plated metal conductive material again, conductive metal material pastes photoresistance film, exposure imaging etching forms metal routing, simple to operately can reduce manufacturing cost.Therefore, the combination of electroplating technology and photoresistance technique can save complicated bonding process to process contact panel, thus effectively reduces thickness and the weight of contact panel, improves penetrability and touch-control susceptibility.
Summary of the invention
Technical matters: the present invention uses photoresistance technology to form lattice non-conducting areas to reduce etching mark to transparent conductive material etching, reduces etching waste liquor and is beneficial to environmental protection; Carry out plated metal conductive material again, conductive metal material pastes photoresistance film, exposure imaging etching forms metal routing, simple to operately can reduce manufacturing cost.
Technical scheme: the present invention discloses a kind of method of manufacture grid pattern type contact panel, comprises the steps to carry out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, etches transparent conductive material with hydrochloric acid, form the line of induction and lattice non-conducting areas;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, obtain metal routing with dioxysulfate water mixed solution etching metal conductive material;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
In above-mentioned steps two, the volumetric molar concentration value range of hydrochloric acid is between 4.1MOL/L to 4.5MOL/L; In step 4, the volumetric molar concentration value of dioxysulfate water mixed liquid is 1MOL/L.In step 2, lattice is square matrix; Wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns; In step 4, the thickness range value of photoresistance film is between 15 microns to 20 microns.The etching reaction time is that 30 seconds are to 60 seconds.Conductive metal material is copper; Transparent conductive material is tin indium oxide.In step 5, the thickness range value of transparent optical cement is between 50 microns to 100 microns.Remove remaining photoresistance film with photoresist after last each line pattern is shaped, improve product appearance quality.
Beneficial effect: the method that the invention discloses manufacture grid pattern type contact panel, photoresistance etching can be carried out to the different depth aspect of contact panel by adopting photoresistance technique and obtain corresponding pattern, use photoresistance technology to form lattice non-conducting areas to transparent conductive material etching and reduce etching mark, reduce etching waste liquor and be beneficial to environmental protection; Carry out plated metal conductive material again, conductive metal material pastes photoresistance film, exposure imaging etching forms metal routing, simple to operately can reduce manufacturing cost.The combination of electroplating technology and photoresistance technique can save complicated bonding process to process contact panel, thus effectively reduces the thickness weight of touch-control product, improves penetrability and touch-control susceptibility.
Accompanying drawing illustrates:
Fig. 1 is partial structurtes pattern schematic block diagram of the present invention.
Fig. 2 is Local grid pattern non-conducting areas of the present invention schematic block diagram.
Fig. 3 is Making programme schematic block diagram of the present invention.
Embodiment
Here is that specific embodiments of the invention further describe:
Shown in Fig. 3, the present invention discloses a kind of method of manufacture grid pattern type contact panel, comprises the steps to carry out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, etches transparent conductive material with hydrochloric acid, form the line of induction and lattice non-conducting areas;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, obtain metal routing with dioxysulfate water mixed solution etching metal conductive material;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
In above-mentioned steps two, the volumetric molar concentration value range of hydrochloric acid is between 4.1MOL/L to 4.5MOL/L; In step 4, the volumetric molar concentration value of dioxysulfate water mixed liquid is 1MOL/L.In step 2, lattice is square matrix; Wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns; In step 4, the thickness range value of photoresistance film is between 15 microns to 20 microns.The etching reaction time is that 30 seconds are to 60 seconds.Conductive metal material is copper; Transparent conductive material is tin indium oxide.In step 5, the thickness range value of transparent optical cement is between 50 microns to 100 microns.
Embodiment 1:
The thickness of inscription flaggy is 0.7 millimeter; The thickness of conductive metal material is 0.04 micron; The thickness of transparent conductive material is 0.045 millimeter; The thickness of substrate layer is 50 microns, and substrate layer is polycarbonate resin.
The method of manufacture grid pattern type contact panel, comprises the steps to carry out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, etches transparent conductive material with hydrochloric acid, form the line of induction and lattice non-conducting areas;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, obtain metal routing with dioxysulfate water mixed solution etching metal conductive material;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
In above-mentioned steps two, the volumetric molar concentration of hydrochloric acid is 4.1MOL/L; In step 4, the volumetric molar concentration of dioxysulfate water mixed liquid is 1.0MOL/L.In step 2, lattice is square matrix; Wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns; In step 4, the thickness of photoresistance film is 15 microns.Wherein, the etching reaction time was 30 seconds.In step 5, the thickness of transparent optical cement is 50 microns.
Embodiment 2:
The thickness of inscription flaggy is 1.8 millimeters; The thickness of conductive metal material is 0.1 micron; The thickness of transparent conductive material is 0.1 micron; The thickness of substrate layer is 180 microns, and substrate layer is hard glass.
The method of manufacture grid pattern type contact panel, comprises the steps to carry out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, etches transparent conductive material with hydrochloric acid, form the line of induction and lattice non-conducting areas;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, obtain metal routing with dioxysulfate water mixed solution etching metal conductive material;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
In above-mentioned steps two, the volumetric molar concentration of hydrochloric acid is 4.5MOL/L; In step 4, the volumetric molar concentration of dioxysulfate water mixed liquid is 1.0MOL/L.In step 2, lattice is square matrix; Wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns; In step 4, the thickness of photoresistance film is 20 microns.Wherein, the etching reaction time was 60 seconds.In step 5, the thickness of transparent optical cement is 100 microns.
Embodiment 3:
The thickness of inscription flaggy is 1.1 millimeters; The thickness of conductive metal material is 0.08 micron; The thickness of transparent conductive material is 0.07 micron; The thickness of substrate layer is 125 microns, and substrate layer is polycarbonate resin.
The method of manufacture grid pattern type contact panel, comprises the steps to carry out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, etches transparent conductive material with hydrochloric acid, form the line of induction and lattice non-conducting areas;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, obtain metal routing with dioxysulfate water mixed solution etching metal conductive material;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
In above-mentioned steps two, the volumetric molar concentration of hydrochloric acid is 4.3MOL/L; In step 4, the volumetric molar concentration of dioxysulfate water mixed liquid is 1.0MOL/L.In step 2, lattice is square matrix; Wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns; In step 4, the thickness of photoresistance film is 18 microns.Wherein, the etching reaction time was 45 seconds.In step 5, the thickness of transparent optical cement is 75 microns.
Claims (2)
1. a method for manufacture grid pattern type contact panel, comprises the steps, it is characterized in that: described step is carried out under dustless drying condition;
Step one: to the aging crystallization of transparent conductive material, described transparent conductive material is tin indium oxide;
Step 2: the aging crystalline transparent conductive material of exposure etching, under temperature 40 Celsius Condition, with hydrochloric acid, transparent conductive material is etched, form the line of induction and lattice non-conducting areas, the volumetric molar concentration value range of described hydrochloric acid is between 4.1MOL/L to 4.5MOL/L, and the described etching reaction time is that 30 seconds are to 60 seconds, described lattice is square matrix, wherein, the single square etching length of side 0.35 millimeter, etching live width 60 microns;
Step 3: transparent conductive material electroplating surface metal conductive material in step 2, described conductive metal material is copper;
Step 4: paste photoresistance film on conductive metal material, exposure imaging etching forms metal routing; Wherein, under room temperature state, metal routing is obtained with dioxysulfate water mixed solution etching metal conductive material, the thickness range value of described photoresistance film is between 15 microns to 20 microns, the volumetric molar concentration value of described dioxysulfate water mixed liquid is 1MOL/L, and the described etching reaction time is that 30 seconds are to 60 seconds;
Step 5: inscription flaggy is fitted on metal routing and transparent conductive material with transparent optical cement.
2. the method for manufacture grid pattern type contact panel as claimed in claim 1, is characterized in that: in described step 5, the thickness range value of transparent optical cement is between 50 microns to 100 microns.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010252112.8A CN101968697B (en) | 2010-08-13 | 2010-08-13 | The method of manufacture grid pattern type contact panel |
| PCT/CN2011/078117 WO2012019531A1 (en) | 2010-08-13 | 2011-08-08 | Method for manufacturing grid-pattern type touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010252112.8A CN101968697B (en) | 2010-08-13 | 2010-08-13 | The method of manufacture grid pattern type contact panel |
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| Publication Number | Publication Date |
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| CN101968697A CN101968697A (en) | 2011-02-09 |
| CN101968697B true CN101968697B (en) | 2015-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010252112.8A Active CN101968697B (en) | 2010-08-13 | 2010-08-13 | The method of manufacture grid pattern type contact panel |
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| CN (1) | CN101968697B (en) |
| WO (1) | WO2012019531A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101968697B (en) * | 2010-08-13 | 2015-12-16 | 牧东光电（苏州）有限公司 | The method of manufacture grid pattern type contact panel |
| CN103376958A (en) * | 2012-04-19 | 2013-10-30 | 深圳欧菲光科技股份有限公司 | Capacitive sensing component, preparing method thereof, and touch control screen with capacitive sensing component |
| CN102707837A (en) * | 2012-05-04 | 2012-10-03 | 牧东光电（苏州）有限公司 | Single-face multi-point touch panel and manufacture method thereof |
| CN103631456B (en) | 2012-08-24 | 2017-07-04 | 深圳欧菲光科技股份有限公司 | Film inductor, the capacitance touch screen comprising the inductor and preparation method thereof and end product |
| US9510456B2 (en) | 2012-11-09 | 2016-11-29 | Shenzhen O-Film Tech Co., Ltd. | Transparent conductor and preparation method thereof |
| CN107665065A (en) * | 2017-09-21 | 2018-02-06 | 意力(广州)电子科技有限公司 | A kind of contact panel and contactor control device |
| CN109696973A (en) * | 2017-10-20 | 2019-04-30 | 南昌欧菲光科技有限公司 | The manufacturing method and touch panel of touch panel |
| CN109901743B (en) * | 2019-01-31 | 2023-02-28 | 深圳市骏达光电股份有限公司 | Flexible conductive material touch sensor and preparation method thereof |
| CN109901742B (en) * | 2019-01-31 | 2023-02-28 | 深圳市骏达光电股份有限公司 | Flexible touch module and preparation method thereof |
Citations (4)
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| CN101441545A (en) * | 2008-12-08 | 2009-05-27 | 中国南玻集团股份有限公司 | Capacitance type touch control screen and manufacturing method thereof |
| CN101661360A (en) * | 2009-09-07 | 2010-03-03 | 苏州超联光电有限公司 | Capacitive touch screen and manufacturing method thereof |
| CN101770321A (en) * | 2010-01-22 | 2010-07-07 | 牧东光电（苏州）有限公司 | Method for processing resistance induction layer |
| WO2010080988A2 (en) * | 2009-01-09 | 2010-07-15 | Apple Inc. | A method for fabricating thin touch sensor panels |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100891247B1 (en) * | 2007-05-14 | 2009-04-01 | 주식회사 하이닉스반도체 | Method of Forming Pattern of Semiconductor Device |
| KR20100049334A (en) * | 2008-11-03 | 2010-05-12 | 주식회사 하이닉스반도체 | Method for forming pattern of semiconductor device |
| CN101968697B (en) * | 2010-08-13 | 2015-12-16 | 牧东光电（苏州）有限公司 | The method of manufacture grid pattern type contact panel |
-
2010
- 2010-08-13 CN CN201010252112.8A patent/CN101968697B/en active Active
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- 2011-08-08 WO PCT/CN2011/078117 patent/WO2012019531A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441545A (en) * | 2008-12-08 | 2009-05-27 | 中国南玻集团股份有限公司 | Capacitance type touch control screen and manufacturing method thereof |
| WO2010080988A2 (en) * | 2009-01-09 | 2010-07-15 | Apple Inc. | A method for fabricating thin touch sensor panels |
| CN101661360A (en) * | 2009-09-07 | 2010-03-03 | 苏州超联光电有限公司 | Capacitive touch screen and manufacturing method thereof |
| CN101770321A (en) * | 2010-01-22 | 2010-07-07 | 牧东光电（苏州）有限公司 | Method for processing resistance induction layer |
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| Publication number | Publication date |
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| WO2012019531A1 (en) | 2012-02-16 |
| CN101968697A (en) | 2011-02-09 |
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Address after: 215126 Jiangsu Province, Suzhou City Industrial Park North Lane 8 Patentee after: Mutto Optronics Corporation Address before: 215126 Jiangsu Province, Suzhou City Industrial Park North Lane 8 Patentee before: Mutto Optronics Corporation |