CN103435043B - Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology - Google Patents
Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology Download PDFInfo
- Publication number
- CN103435043B CN103435043B CN201310383313.5A CN201310383313A CN103435043B CN 103435043 B CN103435043 B CN 103435043B CN 201310383313 A CN201310383313 A CN 201310383313A CN 103435043 B CN103435043 B CN 103435043B
- Authority
- CN
- China
- Prior art keywords
- electron beam
- graphite
- ingot
- plumbago crucible
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention belongs to the field of polycrystalline silicon ingot, and particularly relates to a device and a process method for preparing polycrystalline silicon through the coupling of electronic beam smelting and the crystal growing technology. The device for preparing the polycrystalline silicon through the coupling of the electron beam smelting and the crystal growing technology is characterized in that a graphite crucible is arranged inside a furnace body, the outer wall of the graphite crucible is sequentially provided with a graphite heating body and a graphite insulating sleeve from inside to outside, an upper graphite cover plate of the graphite insulating sleeve can be horizontally moved, and the position on one side of the furnace body, parallel to the upper graphite cover plate, is externally connected with a hollow plate groove; a water-cooling ingot pulling mechanism is installed on the center position of the bottom of the graphite crucible; a cooling circulating water pipe is arranged inside the water-cooling ingot pulling mechanism; the top of the furnace body is provided with an electron gun, the upper end of the side part of the furnace body is provided with an inflating valve, and the lower end is provided with a deflation valve. The process method for preparing the polycrystalline silicon through the coupling of the electron beam smelting and the crystal growing technology comprises the steps of filling materials, vacuumizing, charging argon to increase the pressure, heating to smelt the silicon material, smelting through an electron beam, growing the crystal, annealing the ingot, cooling and opening the furnace to take the ingot.
Description
Technical field
The invention belongs to field of polycrystalline silicon ingot, particularly a kind of electron beam melting is coupled with crystal growing technology the device and processing method of preparing polysilicon.
Background technology
Metallurgy method prepares solar-grade polysilicon technology the only way which must be passed as development low cost, eco-friendly solar-grade polysilicon technology of preparing, achieves tremendous development at present, and achieves suitability for industrialized production.Metallurgy method purifying polycrystalline silicon refers to and adopts physical metallurgy means, when silicon does not participate in chemical reaction occurs, remove the method for the various impurity elements (phosphorus, boron and metal) in silicon successively, it is not single preparation method, but a kind of Integration Method, mainly utilize saturated vapor pressure principle, segregation principle and oxidisability difference principle, adopt different processing methodes respectively, the impurity element of making a return journey in silica removal, thus the silicon material being met solar energy polycrystalline silicon purity requirement.Such as, utilize the boron impurity in medium smelting technique removal silicon, utilize the metallic impurity in directional freeze removal silicon, utilize the phosphorus impurities in electron beam melting technology removal silicon, three kinds of melting technologies are integrated into an operational path, through three kinds of technological processs, thus obtain solar-grade polysilicon.
Patent 201110031566.7 1 kinds of electron beam dephosphorization, except the method and apparatus of the coupling purifying polycrystalline silicon of metal be utilize electron beam the top of the high purity silicon ingot of low-phosphorous, low metal formed stabilised bath, after the silica flour that need purify fall into bath smelting, realize the volatile impunty phosphorus in the rapid melting removal silica flour of powder, carry out orientation draws ingot to make low-phosphorous polysilicon carry out directional solidification growth simultaneously, removes metallic impurity in polysilicon by the effect of segregation.This patent electron beam melting and directional solidification technique is combined to remove impurity element in polysilicon.
Electron beam melting technology, as the important component part in metallurgy method technical process, effectively can remove the high saturated vapor pressure impurity in silicon, as phosphorus.Crystal growing technology meets the link of producing silicon requirements as preparation is final, is the final link of metallurgy method.But at present, in metallurgy method technological process, electron beam melting technology and crystal growing technology are two independently links, be generally by electron beam melting after silicon material, after fragmentation, cleaning process, the silicon material obtained is put into ingot furnace again and is carried out melting again, carries out long crystalline substance, is met the ingot casting producing silicon requirements.But in this flow process, electron beam melting technology and crystal growing technology all relate to fusing and the process of setting of silicon material, simultaneously, silicon material after electron beam melting, needs after sandblasting, fragmentation, cleaning, oven dry, just can enter long brilliant link, add overall investment, and production efficiency is lower.
Summary of the invention
The present invention overcomes above-mentioned not enough problem, the device and processing method that provide a kind of electron beam melting to be coupled with crystal growing technology to prepare polysilicon, removes the phosphorus impurities element in silicon more efficiently, greatly reduces the total energy consumption in production process.
The technical scheme that the present invention is adopted for achieving the above object is: a kind of electron beam melting is coupled with crystal growing technology and prepares the device of polysilicon, plumbago crucible is placed with in body of heater, plumbago crucible outer wall is surrounded with graphite heating body and graphite muff from inside to outside successively, the upper graphite cover plate of graphite muff can move horizontally, and is circumscribed with hollow board slot in the side of body of heater and the parallel position place of upper graphite cover plate; Plumbago crucible bottom centre position is provided with water-cooled ingot pulling mechanism; It is built-in with refrigeration cycle water pipe; Body of heater top is led to and is provided with electron beam gun, and sidepiece upper end has inflation valve, and lower end has purging valve.
The preferred plus silicon carbide of plumbago crucible internal surface or silicon nitride coating.
Adopt electron beam melting to be coupled with crystal growing technology the processing method of the device preparing polysilicon, step is as follows:
(1) charging vacuumizes: put into plumbago crucible by after silicon material cleaning, drying, and vacuumize in body of heater;
(2) argon gas boosting is added: in body of heater, pass into argon gas boosting by inflation valve;
(3) intensification makes silicon material melt: mobile graphite cover plate covers to plumbago crucible top, is energized to silicon material is fused into silicon liquid completely to graphite heating body;
(4) electron beam melting: body of heater and electron beam gun are again vacuumized, removes the graphite cover plate on plumbago crucible, unlocking electronic rifle after setting electron beam gun power, and carry out electron beam melting to silicon liquid surface, melting terminates rear closedown electron beam gun;
(5) the long crystalline substance of crystal: mobile graphite cover plate covers to plumbago crucible top, is filled with argon gas boosting in body of heater, starts water-cooled ingot pulling mechanism and draws ingot, pulls out the thermal field of graphite heating body until long brilliant end by plumbago crucible;
(6) ingot casting annealing: control graphite heating body and temperature of thermal field is set in below silicon fusing point, start water-cooled ingot pulling mechanism, plumbago crucible is risen up into thermal field again, carries out insulation annealing;
(7) cool, blow-on gets ingot: the rate of temperature fall controlling graphite heating body, after ingot casting temperature is reduced, open purging valve, exit to equipment, then ingot casting is taken out in blow-on.
Preferred version is as follows:
To be phosphorus content be this silicon material 0.005 ~ 0.006%, metal content lower than 0.0001%, Boron contents lower than 0.000015% polycrystalline silicon material.
In step (3), the temperature rise rate of graphite heating body is 200 ~ 250 DEG C/h.
Unlocking electronic rifle in step (4), setting electron beam gun power is 90 ~ 120kw.
In step (5), water-cooled ingot pulling mechanism draws ingot speed 0.15 ~ 0.20mm/min.
In step (6), temperature of thermal field is 1200 ~ 1300 DEG C.
In step (7), rate of temperature fall is 100 ~ 150 DEG C/h.
In the present invention, plumbago crucible is put into graphite heating body, graphite heating body added graphite heat insulation sheath, plays insulation effect, and plumbago crucible can be splicing crucible simultaneously, takes taking-up ingot casting after being convenient to blow-on apart; Plumbago crucible internal surface plus silicon carbide coating, avoids silicon and graphite to react, and meanwhile, prevents sticky crucible phenomenon.Mechanical pump, lobe pump, diffusion pump and molecular pump are Vacuum Field common device, in apparatus of the present invention with the use of, process is vacuumized to body of heater and electron beam gun; In electron beam irradiation plumbago crucible, silicon melt surface, increases bath surface temperature, increases the thermograde of surface and surperficial following near zone, and the disturbance of strengthening silicon melt, strengthens the surface effects that phosphorus volatilization is removed, remove the phosphorus impurities in silicon; Upper graphite cover plate, on plumbago crucible top, in horizontal plane movement, can covering on plumbago crucible when heat fused, carry out the insulation of thermal field, when carrying out electron beam melting, being removed by upper graphite cover plate, high insulating effect, is skillfully constructed and easy to operate.
Advantage of the present invention: electron beam melting technology and long brilliant process are coupled by the method effectively, thus achieve the object realizing two kinds of production technique on the same device, graphite heating body is utilized to carry out melted silicon material, utilize electron irradiated silicon bath surface, strengthening surface volatilization effect, volatility phosphorus impurities in efficient removal silicon, then long crystalline substance is carried out, decrease fragmentation, cleaning and oven dry link, save input and the floor space of relevant device, greatly reduce energy expenditure during independent production, total energy consumption decreases beyond 30%, production efficiency can improve about 40%.
Accompanying drawing explanation
Fig. 1 is that electron beam melting is coupled with crystal growing technology and prepares the device schematic diagram of polysilicon.
In figure, 1, electron beam gun, 2, upper mechanical pump, 3, upper lobe pump, 4, upper molecular pump, 5, body of heater, 6, silicon melt, 7, upper graphite cover plate, 8, graphite muff, 9, graphite heating body, 10, purging valve, 11, water-cooled ingot pulling mechanism, 12, refrigeration cycle water pipe, 13, inflation valve, 14, side mechanical pump, 15, side lobe pump, 16, side diffusion pump, 17, plumbago crucible.
Embodiment
Describe the present invention in detail below in conjunction with specific embodiment and accompanying drawing, but the present invention is not limited to specific embodiment.
Embodiment 1:
Plumbago crucible 17 is placed with, plumbago crucible 17 internal surface plus silicon carbide coating in body of heater 5.Plumbago crucible 17 outer wall is surrounded with graphite heating body 9 and graphite muff 8 from inside to outside successively, and the upper graphite cover plate 7 of graphite muff 8 can move horizontally, and is circumscribed with hollow board slot in the side of body of heater 5 and the parallel position place of upper graphite cover plate 7; Plumbago crucible 5 bottom centre position is provided with water-cooled ingot pulling mechanism 11; It is built-in with refrigeration cycle water pipe 12; Body of heater 5 top is led to and is provided with electron beam gun 1, and sidepiece upper end has inflation valve 13, and lower end has purging valve 10.
Embodiment 2:
Adopt the device in embodiment 1 to carry out electron beam melting to be coupled with crystal growing technology and to prepare polysilicon:
(1) be 0.005% by 500kg phosphorus content, metal content 0.00009%, Boron contents be the polycrystalline silicon material of 0.000014%, utilizes cleaning equipment to clean, remove dust, the oil stain on surface, put into drying baker, dry at 80 DEG C; Silicon material after drying is put into plumbago crucible 17, plumbago crucible 17 is moved in equipment and positions; Plumbago crucible 17 is put into graphite heating body 9, and graphite heating body 9 added graphite heat insulation sheath 8, plays insulation effect.
(2) equipment is closed stove, opening device cooling circulating water device, leads to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open body of heater vacuum system, first after utilizing body of heater 5 vacuum system side mechanical pump 14 and side lobe pump 15 that body of heater vacuum is evacuated to 1Pa, close side mechanical pump 14 and side lobe pump 15, pass into argon gas, to body of heater internal pressure to 50KPa by inflation valve 13 to body of heater 5 inside.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, starts water-cooled ingot pulling mechanism 11; Be energized to graphite heating body 9, temperature rise rate is 200 DEG C/h, and to 1550 DEG C of insulation 6h, silicon material melts completely.
(4) close inflation valve 13, stop applying argon gas in body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, body of heater 5 vacuum tightness is evacuated to 8Pa by startup side mechanical pump 14 and side lobe pump 15, then side diffusion pump 16 is started, the vacuum tightness of body of heater 5 is evacuated to 0.004Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0004Pa.Pre-thermionic electron guns 1, is set to 800mA by heater current, to electron beam gun 1 preheating 15min, closes preheating button; Setting electron beam gun 1 power is 100kW, and unlocking electronic rifle 1, in increase power process, controls electron beam 19 energy distribution; Utilize electron beam 19 pairs of silicon melt 6 surfaces to carry out electron beam melting, increase the thermograde of silicon melt 6 surface and surperficial following near zone, the disturbance of strengthening silicon melt 6, strengthens the surface effects that phosphorus volatilization is removed, removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed efficiently, and closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, in body of heater 5, be filled with argon gas by inflation valve 17, air pressure remains on 50KPa, starts water-cooled ingot pulling mechanism 11, draw ingot speed to be 0.15mm/min, plumbago crucible 17 is pulled out graphite heating body 9 thermal field; After plumbago crucible 17 removes graphite heating body 9 completely, close water-cooled ingot pulling mechanism 11, long brilliant end of processing.
(6) control graphite heating body 9, temperature of thermal field is set in 1300 DEG C, start water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into thermal field, and be incubated 3h at 1300 DEG C after, controlling graphite heating body 9 rate of temperature fall is 100 DEG C/h, make ingot casting temperature be down to 1000 DEG C, close graphite heating body 9 power supply.
(7) after 10h cools, open purging valve 10, exit to equipment, then ingot casting is taken out in blow-on.
Embodiment 3:
Adopt the device in embodiment 1 to carry out electron beam melting to be coupled with crystal growing technology and to prepare polysilicon:
(1) be 0.005% by 500kg phosphorus content, metal content is 0.00008%, Boron contents is the polycrystalline silicon material of 0.000013%, utilizes cleaning equipment to clean, remove dust, the oil stain on surface, put into drying baker, dry at 80 DEG C; Silicon material after drying is put into plumbago crucible 17, plumbago crucible 17 is moved in equipment and positions; Plumbago crucible 17 is put into graphite heating body 9, and graphite heating body 9 added graphite heat insulation sheath 8, plays insulation effect.
(2) equipment is closed stove, opening device cooling circulating water device, leads to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open body of heater vacuum system, first after utilizing body of heater 5 vacuum system side mechanical pump 14 and side lobe pump 15 that body of heater 5 vacuum is evacuated to 0.5Pa, close side mechanical pump 14 and side lobe pump 15, pass into argon gas by inflation valve 13 to body of heater 5 inside, to body of heater 5 internal pressure to 48KPa.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, starts water-cooled ingot pulling mechanism 11; Be energized to graphite heating body 9, temperature rise rate 250 DEG C/h, to 1550 DEG C of insulation 5h, silicon material melts completely.
(4) close inflation valve 13, stop applying argon gas in body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, body of heater 5 vacuum tightness is evacuated to 9Pa by startup side mechanical pump 14 and side lobe pump 15, then side diffusion pump 16 is started, the vacuum tightness of body of heater 5 is evacuated to 0.003Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0003Pa.Pre-thermionic electron guns 1, is set to 850mA by heater current, to electron beam gun 1 preheating 15min, closes preheating button; Setting electron beam gun 1 power is 120kW, and unlocking electronic rifle 1, in increase power process, controls electron beam 19 energy distribution; Utilize electron beam 19 pairs of silicon melt 6 surfaces to carry out electron beam melting, increase the thermograde of silicon melt 6 surface and surperficial following near zone, the disturbance of strengthening silicon melt 6, strengthens the surface effects that phosphorus volatilization is removed, removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed efficiently, and closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, in body of heater 5, be filled with argon gas by inflation valve 13, air pressure remains on 48KPa, starts water-cooled ingot pulling mechanism 11, draw ingot speed to be 0.13mm/min, plumbago crucible 17 is pulled out graphite heating body 9 thermal field; After plumbago crucible 17 removes graphite heating body 9 completely, close water-cooled ingot pulling mechanism 11, long brilliant end of processing.
(6) graphite heating body 9 is controlled, temperature of thermal field is set in 1250 DEG C, start water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into thermal field again, 3.5h is incubated at 1250 DEG C, controlling graphite heating body 9 rate of temperature fall is 100 DEG C/h, makes ingot casting temperature slowly, evenly be down to 1000 DEG C, closes graphite heating body 9 power supply.
(7) after 11h cools, open purging valve 10, exit to equipment, then ingot casting is taken out in blow-on.
Embodiment 4:
Adopt the device in embodiment 1 to carry out electron beam melting to be coupled with crystal growing technology and to prepare polysilicon:
(1) be 0.005% by 500kg phosphorus content, metal content is 0.00007%, Boron contents is the polycrystalline silicon material of 0.000013%, utilizes cleaning equipment to clean, remove dust, the oil stain on surface, put into drying baker, dry at 80 DEG C; Silicon material after drying is put into plumbago crucible 17, plumbago crucible 17 is moved in equipment and positions; Plumbago crucible 17 is put into graphite heating body 9, and graphite heating body 9 added graphite heat insulation sheath 8, plays insulation effect.
(2) equipment is closed stove, opening device cooling circulating water device, leads to cooling circulating water by refrigeration cycle water pipe 12 to equipment; Open body of heater vacuum system, first after utilizing body of heater 5 vacuum system side mechanical pump 14 and side lobe pump 15 that body of heater 5 vacuum is evacuated to 0.5Pa, close side mechanical pump 14 and side lobe pump 15, pass into argon gas by inflation valve 13 to body of heater 5 inside, to body of heater 5 internal pressure to 48KPa.
(3) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, starts water-cooled ingot pulling mechanism 11; Be energized to graphite heating body 9, temperature rise rate 220 DEG C/h, to 1550 DEG C of insulation 5.5h, silicon material melts completely.
(4) close inflation valve 13, stop applying argon gas in body of heater 5; Remove the graphite cover plate 7 on plumbago crucible 17, body of heater 5 vacuum tightness is evacuated to 8Pa by startup side mechanical pump 14 and side lobe pump 15, then side diffusion pump 16 is started, the vacuum tightness of body of heater 5 is evacuated to 0.003Pa, start upper mechanical pump 2, upper lobe pump 3 and upper molecular pump 4 simultaneously, electron beam gun 1 vacuum tightness is evacuated to 0.0003Pa.Pre-thermionic electron guns 1, is set to 780mA by heater current, to electron beam gun 1 preheating 15min, closes preheating button; Setting electron beam gun 1 power is 120kW, and unlocking electronic rifle 1, in increase power process, controls electron beam 19 energy distribution; Utilize electron beam 19 pairs of silicon melt 6 surfaces to carry out electron beam melting, increase the thermograde of silicon melt 6 surface and surperficial following near zone, the disturbance of strengthening silicon melt 6, strengthens the surface effects that phosphorus volatilization is removed, removes the phosphorus impurities in silicon; After melting 3h, the phosphorus impurities in silicon is removed efficiently, and closes electron beam gun 1.
(5) in movement, graphite cover plate 7 covers to plumbago crucible 17 top, in body of heater 5, be filled with argon gas by inflation valve 17, air pressure remains on 48KPa, starts water-cooled ingot pulling mechanism 11, draw ingot speed to be 0.14mm/min, plumbago crucible 17 is pulled out graphite heating body 9 thermal field; After plumbago crucible 17 removes graphite heating body 9 completely, close water-cooled ingot pulling mechanism 11 and graphite heating body 9 power supply, long brilliant end of processing.
(6) control graphite heating body 9, temperature of thermal field is set in 1200 DEG C, starts water-cooled ingot pulling mechanism 11, plumbago crucible 17 is risen up into thermal field again, at 1200 DEG C, is incubated 4h, controlling graphite heating body 9 rate of temperature fall is 120 DEG C/h, make ingot casting temperature be down to 1000 DEG C, close graphite heating body 9 power supply.
(7) after 11.5h cools, open purging valve 10, exit to equipment, then ingot casting is taken out in blow-on.
In sum, electron beam melting technology and long brilliant process are coupled by this device effectively, thus achieve the object realizing two kinds of production technique on the same device, graphite heating body is utilized to carry out melted silicon material, utilize electron irradiated silicon bath surface, strengthening surface volatilization effect, volatility phosphorus impurities in efficient removal silicon, then long crystalline substance is carried out, decrease fragmentation, cleaning and dry link, saving input and the floor space of relevant device, greatly reducing energy expenditure during independent production, total energy consumption decreases beyond 30%, and production efficiency can improve 40%.
Claims (2)
1. electron beam melting is coupled with crystal growing technology and prepares a processing method for polysilicon, it is characterized in that step is as follows:
(1) charging vacuumizes: put into plumbago crucible (17) by after silicon material cleaning, drying, and vacuumize in body of heater (5);
(2) argon gas boosting is added: in body of heater (5), incorporate argon gas boosting by inflation valve (13);
(3) intensification makes silicon material melt: in movement, graphite cover plate (7) covers to plumbago crucible (17) top, be energized to silicon material to graphite heating body (9) and be melted into silicon liquid completely, the temperature rise rate of graphite heating body (9) is 200 ~ 250 DEG C/h;
(4) electron beam melting: body of heater (5) and electron beam gun (1) are vacuumized again, remove the upper graphite cover plate (7) of plumbago crucible (17), the power of setting electron beam gun (1) is unlocking electronic rifle (1) after 90 ~ 120kW, carry out electron beam melting to silicon liquid surface, melting terminates rear closedown electron beam gun (1);
(5) crystal is long brilliant: in movement, graphite cover plate (7) covers to plumbago crucible (17) top, argon gas boosting is filled with in body of heater (5), start water-cooled ingot pulling mechanism (11) and draw ingot, water-cooled ingot pulling mechanism (11) draw ingot speed 0.15 ~ 0.2mm/min, by the thermal field of plumbago crucible (17) pull-out graphite heating body (9) until long brilliant to terminate;
(6) ingot casting annealing: control graphite heating body (9), heating field temperature is set in 1200 ~ 1300 DEG C, starts water-cooled ingot pulling mechanism (11), plumbago crucible (17) is risen up into thermal field again, carries out insulation annealing;
(7) cool, blow-on gets ingot: the rate of temperature fall controlling graphite heating body (9) is 100 ~ 150 DEG C/h, after ingot casting temperature is reduced, open purging valve (10), exit to equipment, then ingot casting is taken out in blow-on.
2. e-book melting according to claim 1 is coupled with crystal growing technology and prepares the processing method of polysilicon, it is characterized in that this silicon material to be phosphorus content be 0.005 ~ 0.006%, metal content lower than 0.0001%, Boron contents lower than 0.000015% polycrystalline silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383313.5A CN103435043B (en) | 2013-08-28 | 2013-08-28 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383313.5A CN103435043B (en) | 2013-08-28 | 2013-08-28 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103435043A CN103435043A (en) | 2013-12-11 |
| CN103435043B true CN103435043B (en) | 2015-05-27 |
Family
ID=49688797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310383313.5A Expired - Fee Related CN103435043B (en) | 2013-08-28 | 2013-08-28 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103435043B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104131338B (en) * | 2014-07-17 | 2016-08-24 | 大连理工大学 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
| CN104195639B (en) * | 2014-09-01 | 2017-02-15 | 大连理工大学 | Method for preparing boron master alloy |
| CN104528732B (en) * | 2014-12-25 | 2017-04-12 | 大连理工大学 | Novel device and method for reducing energy consumption of electron beam melting technology |
| CN105950878B (en) * | 2016-04-26 | 2017-09-22 | 中国工程物理研究院材料研究所 | A kind of effective apparatus and method for removing impurity in uranium metal |
| CN110926212A (en) * | 2019-12-18 | 2020-03-27 | 西安聚能高温合金材料科技有限公司 | Device and method for adding heat insulation material to vacuum induction cast ingot in vacuum environment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101445957B (en) * | 2008-12-16 | 2011-01-19 | 桂林实创真空数控设备有限公司 | Vacuum electron beam melting furnace for polysilicon purification |
| CN202063730U (en) * | 2011-05-16 | 2011-12-07 | 大连隆田科技有限公司 | Electron beam and slag filter smelting polycrystalline silicon purifying equipment |
| CN102120578B (en) * | 2011-01-29 | 2012-10-03 | 大连隆田科技有限公司 | Method and device for coupling and purifying polysilicon and removing phosphorus and metal with electron beams |
-
2013
- 2013-08-28 CN CN201310383313.5A patent/CN103435043B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101445957B (en) * | 2008-12-16 | 2011-01-19 | 桂林实创真空数控设备有限公司 | Vacuum electron beam melting furnace for polysilicon purification |
| CN102120578B (en) * | 2011-01-29 | 2012-10-03 | 大连隆田科技有限公司 | Method and device for coupling and purifying polysilicon and removing phosphorus and metal with electron beams |
| CN202063730U (en) * | 2011-05-16 | 2011-12-07 | 大连隆田科技有限公司 | Electron beam and slag filter smelting polycrystalline silicon purifying equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103435043A (en) | 2013-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103435043B (en) | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology | |
| CN100595352C (en) | Method for preparing big ingot of polysilicon in level of solar energy | |
| CN103420380B (en) | Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology | |
| CN103572365B (en) | Ingot furnace with movable side heater and ingot production process | |
| CN103387236B (en) | Refining device and method of high purity silicon | |
| CN203440096U (en) | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and crystal growing technology | |
| CN102066249A (en) | Method and apparatus for purifying metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use | |
| CN201289290Y (en) | Rapid cooling type intermediate frequency induction sintering furnace | |
| CN102191542A (en) | Equipment and method for preparing high-purity directionally crystallized polysilicon | |
| CN203440097U (en) | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and directional solidification technology | |
| CN103014853B (en) | Polycrystalline silicon ingot casting device | |
| CN103420379B (en) | Method and the device thereof of solar-grade polysilicon are prepared in electron beam serialization melting | |
| CN204608213U (en) | A kind of easy to operate silicon ingot crystallizer | |
| CN103351002B (en) | Polysilicon directional solidification device | |
| CN105133019A (en) | Multi-chamber gallium arsenide single crystal growth furnace and method | |
| CN104556050B (en) | A kind of electron beam is crossed hot smelting and is removed the method and apparatus of metal impurities in polysilicon | |
| CN205188478U (en) | Polysilicon ingot furnace | |
| CN104651929B (en) | A kind of method and apparatus that the deoxygenation of electron-beam smelting polysilicon is coupled with ingot casting | |
| CN104651930A (en) | Apparatus for preparing polysilicon through electron beam deoxygenation and preliminary ingot casting coupling, and method thereof | |
| CN205316969U (en) | Multistage continuous vacuum furnace of interior hot type | |
| CN201495105U (en) | Ingot furnace heater capable of gradient temperature control | |
| CN107677126A (en) | A kind of electromagnetic suspension water jacketed copper crucible | |
| CN203559160U (en) | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting | |
| CN203530491U (en) | Polycrystalline silicon ingot casting device | |
| CN203530493U (en) | Polycrystalline silicon ingot furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171103 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266234 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171124 Address after: Miao road Laoshan District 266061 Shandong city of Qingdao Province, No. 52 906 Patentee after: Qingdao Changsheng Electric Design Institute Co. Ltd. Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150527 Termination date: 20190828 |