CN105133019A - Multi-chamber gallium arsenide single crystal growth furnace and method - Google Patents
Multi-chamber gallium arsenide single crystal growth furnace and method Download PDFInfo
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- CN105133019A CN105133019A CN201510659806.6A CN201510659806A CN105133019A CN 105133019 A CN105133019 A CN 105133019A CN 201510659806 A CN201510659806 A CN 201510659806A CN 105133019 A CN105133019 A CN 105133019A
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Abstract
The invention discloses a multi-chamber gallium arsenide single crystal growth furnace and method and relates to gallium arsenide polycrystals, in particular to a multi-chamber gallium arsenide single crystal growth furnace and method which are used for controlling growth of gallium arsenide single crystals through induction vortexes of a magnetic field and improving the growth efficiency of the gallium arsenide single crystals. According to the growth method, the multi-chamber gallium arsenide single crystal growth furnace is used for synthesizing and comprises four independent furnace chambers and longitudinal magnetic field devices matched with the furnace chambers, the furnace chambers are embedded in the longitudinal magnetic field devices, the longitudinal magnetic field devices of the four furnace chambers are connected integrally through a wire, in the growth process of the gallium arsenide polycrystals, the induction vortexes are generated through the magnetic field devices, and the growth of the single crystals is controlled through the induction vortexes. According to the multi-chamber gallium arsenide single crystal growth furnace and method, synchronous single crystal growth of the furnace chambers is achieved, the growth efficiency of the single crystals is improved, newly-grown crystals inherit the perfect structure of seed crystals, and the quality of the crystals is improved.
Description
Technical field
The present invention relates to gallium arsenide polycrystal, especially a kind of by the growth of induced by magnetic field whirlpool control arsenide gallium monocrystal, improve multicell arsenide gallium monocrystal growth furnace and the growth method thereof of arsenide gallium monocrystal growth efficiency.
Background technology
Arsenide gallium monocrystal, because its excellent electric property, is widely used at photoelectron and microelectronic.Along with space cell, high-power red-light LED and microelectronic fast development, gallium arsenide crystal growth technology is had higher requirement, large size and high-quality gallium arsenide be grown to serve as main trend.
Gallium arsenide thermal conductivity is lower, and solid-liquid latent heat does not conduct well by crystal, and solid-liquid interface presents situation low between edge senior middle school, and interface is uneven and unstable, and monocrystalline rate is very low.Traditional horizontal Bridgman method of gallium arsenide growing technology (HB), vertical bridgman method (VB, VGF) have 6 ~ 8 well heaters, and heater temperature sequence of control is complicated, considerably increase single crystal growing research and development difficulty.The sublimation point of arsenic is lower, and long brilliant process expand tube, draw phenomenon are very serious, cause arsenic to leak, and damage single crystal growing furnace burner hearth, cause disadvantageous effect to Working environment.Traditional method arsenide gallium monocrystal stove melt temperature fluctuates, and seed crystal superfusion phenomenon frequently occurs, the complicated operation of seed crystal semi-molten.
In prior art, Chinese patent 20081016940.8 discloses arsenide gallium monocrystal substrate and manufactures the method for arsenide gallium monocrystal, Chinese patent 201210167241.6 discloses a kind of growth method of arsenide gallium monocrystal, above-mentioned two kinds of methods do not conduct by crystal well at crystal growing process solid-liquid latent heat, solid-liquid interface homogeneity and poor stability, arsenide gallium monocrystal rate is low.CN200410093025.7 reports the growth method of arsenide gallium monocrystal, aforesaid method complex process, can not solve the technical barrier that in long brilliant process, arsenic leaks.During prior art consumption energy consumption, the high quality arsenide gallium monocrystal more than 4 inches can not be produced expeditiously.
Summary of the invention
The present invention will solve that just traditional arsenide gallium monocrystal growth method monocrystalline rate is low, well heater Controlling Technology complicated and the problem such as arsenic leakage pollution, there is provided a kind of and adopt seed crystal oriented growth technique and longitudinal magnetic field induction whirlpool technique, reduce arsenide gallium monocrystal growth R&D costs, improve multicell arsenide gallium monocrystal growth furnace and the growth method thereof of high quality arsenide gallium monocrystal growth efficiency.
Multicell arsenide gallium monocrystal growth furnace of the present invention and growth method thereof, be is characterized in that this growth method utilizes multicell arsenide gallium monocrystal growth furnace, synthesized by following steps:
A, multicell arsenide gallium monocrystal growth furnace:
Comprise four independently furnace chamber and the longitudinal magnetic field devices supporting with furnace chamber, furnace chamber is nested in longitudinal magnetic field device, and the longitudinal magnetic field device of four furnace chambers is connected by wire, wherein:
Oven chamber structure comprises body of heater, furnace wall, porcelain tube, well heater, thermopair, thermopair, quartzy steel tubing in different shapes, PBN crucible, combustion chamber, elevator; Furnace wall is fixed on inboard wall of furnace body, and porcelain tube is fixed on the inwall of furnace wall, and well heater is three, is divided into upper portion heater, middle part well heater and lower heater, is separately fixed at upper, middle and lower three place in furnace wall; Quartz steel tubing in different shapes is funnel-form, is placed in porcelain tube; PBN crucible is placed in quartzy steel tubing in different shapes, and combustion chamber is arranged on bottom quartzy steel tubing in different shapes; Thermopair is two, and be respectively upper thermocouple and bottom thermopair, upper thermocouple is fixed on body of heater top, and bottom thermopair is fixed in combustion chamber; Elevator is connected with combustion chamber bottom surface;
Longitudinal magnetic field device comprises arc magneticfield coil, inner core, urceolus, argon tanks, and arc magneticfield coil is arranged in inner core, and inner core is placed in urceolus, and argon tanks is connected with urceolus;
B, operation steps:
(1) arrangement of gallium arsenide seed crystal: bottom gallium arsenide seed crystal being placed in PBN crucible, and by boron oxide shutoff PBN crucible bottom;
(2) prepare raw material and standby stove: by purity be 99.99999% high-purity gallium arsenide polycrystal raw material put into PBN crucible respectively, and crucible is put into quartzy steel tubing in different shapes;
(3) soldering and sealing of quartzy steel tubing in different shapes: the quartzy steel tubing in different shapes of above-mentioned steps is evacuated to 10
-3pa ~ 0.4*10
-4pa, and utilize oxyhydrogen flame to carry out soldering and sealing to quartzy steel tubing in different shapes, then quartzy steel tubing in different shapes good for vacuum tightness is put into furnace chamber;
(4) melting of raw material: increased in 24 hours, progressively increase by three heater powers, make that upper portion heater power reaches 6kW ~ 8kW, middle part heater power reaches 8kW ~ 10kW, lower heater power reaches 10kW ~ 12kW, PBN crucible is heated, the raw material in melting PBN crucible;
(5) seed crystal semi-melting: when to record temperature be 1267.5 DEG C ~ 1275 DEG C to upper thermocouple, open longitudinal magnetic field device, regulate longitudinal magnetic field device electric current to 475A ~ 1000A, keep upper portion heater and middle part heater power constant, and regulating the power of lower heater to 12.5kW ~ 20kW, the temperature that bottom thermopair is recorded is 1235 DEG C ~ 1250 DEG C;
(6) crystal shoulder growth: keep upper portion heater and middle part heater power constant, lower heater power stability reduces by 24 hours, and lowering speed is 0.1kW/h ~ 0.25kW/h, makes crystal shoulder stable growth;
(7) growth of crystal equal-diameter part: regulate longitudinal magnetic field device electric current to be 400A ~ 900A, the temperature that bottom thermopair records is 1240 DEG C ~ 1245 DEG C, there is induction whirlpool, then longitudinal magnetic field device electric current is reduced with the speed of 0.1A/h ~ 0.4A/h, simultaneously respectively with 0.1kW/h ~ 0.4kW/h, 0.12kW/h ~ 0.24kW/h, the speed of 0.1kW/h ~ 0.22kW/h reduces upper portion heater, the power of three well heaters of middle part well heater and lower heater, and at the uniform velocity reduce lift height with 7mm/h ~ 10mm/h, this step time is 48 hours, make crystal equal-diameter part stable growth,
(8) crystal annealing: treating that upper thermocouple records temperature is 1230 DEG C ~ 1226 DEG C, reduce upper portion heater power reduction speed 1kW/h ~ 2.6kW/h respectively, middle part heater power underspeeds 2kW/h ~ 3kW/h and lower heater heater power underspeeds 3kW/h ~ 4kW/h, heater power fall time is 80 hours, then closes elevator and longitudinal magnetic field device;
(9) crystalline substance and de-crucible is got: when device power drop to be heated is 0, close heater power source, arsenide gallium monocrystal is made to naturally cool to room temperature, the PBN crucible that the arsenide gallium monocrystal grown is housed is put into high-purity methyl alcohol that purity is 99.99999%, heating methanol solution to 40 DEG C ~ 60 DEG C, after 24 hours ~ 48 hours, arsenide gallium monocrystal is separated with PBN crucible, obtains arsenide gallium monocrystal.
Described well heater, wherein upper portion heater position is corresponding with upper part of PBN crucible, and middle part heater locations is corresponding with lower part of PBN crucible, and lower heater position is corresponding with silica wool combustion chamber.
Described thermopair, corresponding with the GaAs melt liquid level in PBN crucible bottom upper thermocouple, bottom thermopair tip position is corresponding with in the middle part of seed crystal.
Its outside diameter of described furnace chamber is 350mm ~ 800mm, is highly 1250mm ~ 2000mm.
The ratio of the longitudinal number of turn of described coil and the horizontal number of turn is 2.75 ~ 5, and the total number of turns of coil is 1125 ~ 3000.
The distance on described coil and furnace chamber surface is 400mm ~ 1000mm.
Multicell arsenide gallium monocrystal growth furnace of the present invention and growth method thereof, compared with prior art, have outstanding substantive distinguishing features and significant progress, show:
(1) utilize compartment furnace to grow arsenide gallium monocrystal, realize the single crystal growing that multi-chamber is synchronous, improve single crystal growing efficiency;
(2) by seed crystal directional process, make the new long crystal heredity perfect structure of crystal seed, improve crystal mass;
(3) longitudinal magnetic field whirlpool induced processes is utilized, there is induction whirlpool in solid-liquid interface edge, this whirlpool has evened up solid-liquid interface, reduce unstable and the ununiformity of solid-liquid interface, the control of solid-liquid interface becomes and is more prone to, thus well heater quantity is reduced to 3 from 6 ~ 8, reduce the complicacy of heater control program; Induction whirlpool facilitates melt flow, makes melt temperature more even, avoids the appearance of arsenic leakage phenomenon; Induction whirlpool reduces melt temperature fluctuation, makes the operation of seed crystal semi-molten easier, avoids seed crystal superfusion phenomenon;
(4) utilize special argon tanks deionized water to do medium to cool longitudinal magnetic field coil, compared with traditional oils refrigerating unit, improve cooling efficiency.
Accompanying drawing explanation
Fig. 1 is the vertical view of multicell arsenide gallium monocrystal growth furnace of the present invention.
Fig. 2 is multicell arsenide gallium monocrystal growth furnace cross section view of the present invention.
Wherein, furnace chamber 1, longitudinal magnetic field device 2, magneticfield coil 3, inner core 4, urceolus 5, argon tanks 6, body of heater 7, furnace wall 8, porcelain tube 9, upper portion heater 10, middle part well heater 11, lower heater 12, upper thermocouple 13, bottom thermopair 14, quartz steel tubing in different shapes 15, PBN crucible 16, seed crystal 17, combustion chamber 18, elevator 19, GaAs melt 20.
Embodiment
Embodiment 1: a kind of multicell arsenide gallium monocrystal growth furnace and growth method thereof, this growth method utilizes multicell arsenide gallium monocrystal growth furnace, is synthesized by following steps:
A, multicell arsenide gallium monocrystal growth furnace:
Comprise four independently furnace chamber 1 and the longitudinal magnetic field devices 2 supporting with furnace chamber 1, furnace chamber 1 is nested in longitudinal magnetic field device 2, and the longitudinal magnetic field device 2 of four furnace chambers 1 is connected by wire, and furnace chamber 1 outside diameter is 350mm ~ 800mm, be highly 1250mm ~ 2000mm, wherein:
Furnace chamber 1 structure comprises body of heater 7, furnace wall 8, porcelain tube 9, well heater, thermopair, thermopair, quartzy steel tubing in different shapes 15, PBN crucible 16, combustion chamber 18, elevator 19; Furnace wall 8 is fixed on body of heater 7 inwall, porcelain tube 9 is fixed on the inwall of furnace wall 8, well heater is three, be divided into upper portion heater 10, middle part well heater 11 and lower heater 12, be separately fixed at upper, middle and lower three place in furnace wall 8, upper portion heater 10 position is corresponding with upper part of PBN crucible 16, and middle part well heater 11 position is corresponding with lower part of PBN crucible 16, and lower heater 12 position is corresponding with silica wool combustion chamber 18; Quartz steel tubing in different shapes 15, in funnel-form, is placed in porcelain tube 9; PBN crucible 16 is placed in quartzy steel tubing in different shapes 15, and combustion chamber 18 is arranged on bottom quartzy steel tubing in different shapes 15; Thermopair is two, be respectively upper thermocouple 13 and bottom thermopair 14, upper thermocouple 13 is fixed on body of heater 7 top, bottom thermopair 14 is fixed in combustion chamber 18, corresponding with GaAs melt 20 liquid level in PBN crucible 16 bottom upper thermocouple 13, bottom thermopair 14 tip position is corresponding with in the middle part of seed crystal 17; Elevator 19 is connected with combustion chamber 18 bottom surface;
Longitudinal magnetic field device 2 comprises arc magneticfield coil 3, inner core 4, urceolus 5, argon tanks 6, arc magneticfield coil 3 is arranged in inner core 4, inner core 4 is placed in urceolus 5, argon tanks 6 is connected with urceolus 5, the ratio of the longitudinal number of turn of coil and the horizontal number of turn is 2.75 ~ 5, the total number of turns of coil is 1125 ~ 3000, and the distance on coil and furnace chamber 1 surface is 400mm ~ 1000mm;
B, operation steps:
(1) arrangement of gallium arsenide seed crystal 17: bottom gallium arsenide seed crystal 17 being placed in PBN crucible 16, and with bottom boron oxide shutoff PBN crucible 16;
(2) prepare raw material and standby stove: by purity be 99.99999% high-purity gallium arsenide polycrystal raw material put into PBN crucible 16 respectively, and crucible is put into quartzy steel tubing in different shapes 15;
(3) soldering and sealing of quartzy steel tubing in different shapes 15: the quartzy steel tubing in different shapes 15 of above-mentioned steps is evacuated to 10
-3pa ~ 0.4*10
-4pa, and utilize oxyhydrogen flame to carry out soldering and sealing to quartzy steel tubing in different shapes 15, then quartzy steel tubing in different shapes 15 good for vacuum tightness is put into furnace chamber 1;
(4) melting of raw material: increased in 24 hours, progressively increase by three heater powers, make that upper portion heater 10 power reaches 6kW ~ 8kW, middle part well heater 11 power reaches 8kW ~ 10kW, lower heater 12 power reaches 10kW ~ 12kW, PBN crucible 16 is heated, the raw material in melting PBN crucible 16;
(5) seed crystal 17 semi-melting: when to record temperature be 1267.5 DEG C ~ 1275 DEG C to upper thermocouple 13, open longitudinal magnetic field device 2, regulate longitudinal magnetic field device 2 electric current to 475A ~ 1000A, keep upper portion heater 10 and middle part well heater 11 power constant, and regulating the power of lower heater 12 to 12.5kW ~ 20kW, the temperature that bottom thermopair 14 is recorded is 1235 DEG C ~ 1250 DEG C;
(6) crystal shoulder growth: keep upper portion heater 10 and middle part well heater 11 power constant, lower heater 12 power stability reduces by 24 hours, and lowering speed is 0.1kW/h ~ 0.25kW/h, makes crystal shoulder stable growth;
(7) growth of crystal equal-diameter part: regulate longitudinal magnetic field device 2 electric current to be 400A ~ 900A, the temperature that bottom thermopair 14 records is 1240 DEG C ~ 1245 DEG C, there is induction whirlpool, then longitudinal magnetic field device 2 electric current is reduced with the speed of 0.1A/h ~ 0.4A/h, simultaneously respectively with 0.1kW/h ~ 0.4kW/h, 0.12kW/h ~ 0.24kW/h, the speed of 0.1kW/h ~ 0.22kW/h reduces upper portion heater 10, the power of three well heaters of middle part well heater 11 and lower heater 12, and at the uniform velocity reduce elevator 19 height with 7mm/h ~ 10mm/h, this step time is 48 hours, make crystal equal-diameter part stable growth,
(8) crystal annealing: treating that upper thermocouple 13 records temperature is 1230 DEG C ~ 1226 DEG C, reduce upper portion heater 10 power reduction speed 1kW/h ~ 2.6kW/h, middle part well heater 11 power reduction speed 2kW/h ~ 3kW/h and lower heater 12 heater power respectively to underspeed 3kW/h ~ 4kW/h, heater power fall time is 80 hours, then closes elevator 19 and longitudinal magnetic field device 2;
(9) crystalline substance and de-crucible is got: when device power drop to be heated is 0, close heater power source, arsenide gallium monocrystal is made to naturally cool to room temperature, the PBN crucible 16 that the arsenide gallium monocrystal grown is housed is put into high-purity methyl alcohol that purity is 99.99999%, heating methanol solution to 40 DEG C ~ 60 DEG C, after 24 hours ~ 48 hours, arsenide gallium monocrystal is separated with PBN crucible 16, obtains arsenide gallium monocrystal.
Claims (6)
1. multicell arsenide gallium monocrystal growth furnace and a growth method thereof, be is characterized in that this growth method utilizes multicell arsenide gallium monocrystal growth furnace, is synthesized by following steps:
A, multicell arsenide gallium monocrystal growth furnace:
Comprise four independently furnace chamber (1) and the longitudinal magnetic field devices (2) supporting with furnace chamber (1), furnace chamber (1) is nested in longitudinal magnetic field device (2), and the longitudinal magnetic field device (2) of four furnace chambers (1) is connected by wire, wherein:
Furnace chamber (1) structure comprises body of heater (7), furnace wall (8), porcelain tube (9), well heater, thermopair, thermopair, quartzy steel tubing in different shapes (15), PBN crucible (16), combustion chamber (18), elevator (19); Furnace wall (8) is fixed on body of heater (7) inwall, porcelain tube (9) is fixed on furnace wall (8) inwall, well heater is three, is divided into upper portion heater (10), middle part well heater (11) and lower heater (12), is separately fixed at upper, middle and lower three place in furnace wall (8); Quartz steel tubing in different shapes (15), in funnel-form, is placed in porcelain tube (9); PBN crucible (16) is placed in quartzy steel tubing in different shapes (15), and combustion chamber (18) is arranged on quartzy steel tubing in different shapes (15) bottom; Thermopair is two, and be respectively upper thermocouple (13) and bottom thermopair (14), upper thermocouple (13) is fixed on body of heater (7) top, and bottom thermopair (14) is fixed in combustion chamber (18); Elevator (19) is connected with combustion chamber (18) bottom surface;
Longitudinal magnetic field device (2) comprises arc magneticfield coil (3), inner core (4), urceolus (5), argon tanks (6), arc magneticfield coil (3) is arranged in inner core (4), inner core (4) is placed in urceolus (5), and argon tanks (6) is connected with urceolus (5);
B, operation steps:
(1) arrangement of gallium arsenide seed crystal (17): bottom gallium arsenide seed crystal (17) being placed in PBN crucible (16), and with bottom boron oxide shutoff PBN crucible (16);
(2) prepare raw material and standby stove: by purity be 99.99999% high-purity gallium arsenide polycrystal raw material put into PBN crucible (16) respectively, and crucible is put into quartzy steel tubing in different shapes (15);
(3) soldering and sealing of quartzy steel tubing in different shapes (15): the quartzy steel tubing in different shapes (15) of above-mentioned steps is evacuated to 10
-3pa ~ 0.4*10
-4pa, and utilize oxyhydrogen flame to carry out soldering and sealing to quartzy steel tubing in different shapes (15), then quartzy steel tubing in different shapes (15) good for vacuum tightness is put into furnace chamber (1);
(4) melting of raw material: increased in 24 hours, progressively increase by three heater powers, make that upper portion heater (10) power reaches 6kW ~ 8kW, middle part well heater (11) power reaches 8kW ~ 10kW, lower heater (12) power reaches 10kW ~ 12kW, PBN crucible (16) is heated, the raw material in melting PBN crucible (16);
(5) seed crystal (17) semi-melting: when to record temperature be 1267.5 DEG C ~ 1275 DEG C to upper thermocouple (13), open longitudinal magnetic field device (2), regulate longitudinal magnetic field device (2) electric current to 475A ~ 1000A, keep upper portion heater (10) and middle part well heater (11) power constant, and regulating the power of lower heater (12) to 12.5kW ~ 20kW, the temperature that bottom thermopair (14) is recorded is 1235 DEG C ~ 1250 DEG C;
(6) crystal shoulder growth: keep upper portion heater (10) and middle part well heater (11) power constant, lower heater (12) power stability reduces by 24 hours, and lowering speed is 0.1kW/h ~ 0.25kW/h, makes crystal shoulder stable growth;
(7) growth of crystal equal-diameter part: regulate longitudinal magnetic field device (2) electric current to be 400A ~ 900A, the temperature that bottom thermopair (14) records is 1240 DEG C ~ 1245 DEG C, there is induction whirlpool, then longitudinal magnetic field device (2) electric current is reduced with the speed of 0.1A/h ~ 0.4A/h, simultaneously respectively with 0.1kW/h ~ 0.4kW/h, 0.12kW/h ~ 0.24kW/h, the speed of 0.1kW/h ~ 0.22kW/h reduces upper portion heater (10), the power of three well heaters of middle part well heater (11) and lower heater (12), and at the uniform velocity reduce elevator (19) highly with 7mm/h ~ 10mm/h, this step time is 48 hours, make crystal equal-diameter part stable growth,
(8) crystal annealing: treating that upper thermocouple (13) records temperature is 1230 DEG C ~ 1226 DEG C, reduce upper portion heater (10) power reduction speed 1kW/h ~ 2.6kW/h, middle part well heater (11) power reduction speed 2kW/h ~ 3kW/h and lower heater (12) heater power respectively to underspeed 3kW/h ~ 4kW/h, heater power fall time is 80 hours, then closes elevator (19) and longitudinal magnetic field device (2);
(9) crystalline substance and de-crucible is got: when device power drop to be heated is 0, close heater power source, arsenide gallium monocrystal is made to naturally cool to room temperature, the PBN crucible (16) that the arsenide gallium monocrystal grown is housed is put into high-purity methyl alcohol that purity is 99.99999%, heating methanol solution to 40 DEG C ~ 60 DEG C, after 24 hours ~ 48 hours, arsenide gallium monocrystal is separated with PBN crucible (16), obtains arsenide gallium monocrystal.
2. multicell arsenide gallium monocrystal growth furnace as claimed in claim 1 and growth method thereof, it is characterized in that described well heater, wherein upper portion heater (10) position is corresponding with upper part of PBN crucible (16), well heater (11) position, middle part is corresponding with lower part of PBN crucible (16), and lower heater (12) position is corresponding with silica wool combustion chamber (18).
3. multicell arsenide gallium monocrystal growth furnace as claimed in claim 1 and growth method thereof, it is characterized in that described thermopair, upper thermocouple (13) bottom is corresponding with GaAs melt (20) liquid level in PBN crucible (16), and bottom thermopair (14) tip position is corresponding with seed crystal (17) middle part.
4. multicell arsenide gallium monocrystal growth furnace as claimed in claim 1 and growth method thereof, it is characterized in that described furnace chamber (1) its outside diameter is 350mm ~ 800mm, is highly 1250mm ~ 2000mm.
5. multicell arsenide gallium monocrystal growth furnace as claimed in claim 1 and growth method thereof, it is characterized in that the ratio of the longitudinal number of turn of described coil and the horizontal number of turn is 2.75 ~ 5, the total number of turns of coil is 1125 ~ 3000.
6. multicell arsenide gallium monocrystal growth furnace as claimed in claim 1 and growth method thereof, is characterized in that the distance on described coil and furnace chamber (1) surface is 400mm ~ 1000mm.
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| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
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| CN110923802A (en) * | 2019-12-24 | 2020-03-27 | 西安交通大学 | Multi-crucible crystal growth furnace with independently-controllable stations and control method |
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| CN110565168A (en) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | Furnace body temperature-adjustable cold wall single crystal furnace and gallium arsenide crystal growth method |
| CN110725008A (en) * | 2019-11-28 | 2020-01-24 | 珠海鼎泰芯源晶体有限公司 | Annealing and de-panning method after crystal growth and crystal preparation method |
| CN110923802A (en) * | 2019-12-24 | 2020-03-27 | 西安交通大学 | Multi-crucible crystal growth furnace with independently-controllable stations and control method |
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