CN104131338B - Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method - Google Patents
Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method Download PDFInfo
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- CN104131338B CN104131338B CN201410339745.0A CN201410339745A CN104131338B CN 104131338 B CN104131338 B CN 104131338B CN 201410339745 A CN201410339745 A CN 201410339745A CN 104131338 B CN104131338 B CN 104131338B
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Abstract
The local, electron beam top of the present invention adds thermocoagulation polysilicon knot screen and method, in body of heater, bottom is provided with graphite base, graphite base is furnished with the crucible loading polycrystalline silicon material, in body of heater, it is positioned at crucible periphery is provided with the calandria connected with system control device, being provided with electron gun in upper of furnace body, the electron beam produced during electron gun work just points to the inner side of crucible.Step is as follows: load polycrystalline silicon material in crucible, and crucible is placed on graphite base, closes fire door, pumping high vacuum, and vacuum is less than 0.1Pa；Check that parameter program of running are heated；Long crystalline substance；Survey solid liquid interface height；Utilize electron gun that the heating of liquid level local, interface are formed lobe；Cooling is come out of the stove；Remove protruding highly dense extrinsic region.There is yield height, the advantage of low cost.
Description
Technical field
The present invention relates to purification and the ingot casting device and method of a kind of polysilicon, local, particularly a kind of electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method.
Background technology
In the purification or ingot casting link of polysilicon, top silicon material is impurity compact district, and silicon ingot can spread to bottom concentration range from top area with high mercury at coagulation forming rear impurity, thus affects utilization rate of silicon ingot.Due to impurity diffusion after silicon ingot coagulation forming, impurity range increase in time and expand, the height of excision is consequently increased, and yield decreases；Usual method is after silicon ingot molding, is excised by top height impurity range with the cutting equipment of specialty, and it is high that the later stage processes top height impurity range cost.
Summary of the invention
It is an object of the invention to provide a kind of polysilicon purifying and during ingot casting, solidification temperature occurs that difference, solid liquid interface can form projection, boss can be assembled the local, electron beam top of impurity and add thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method, to facilitate removal to have the bossing of highly dense impurity, improve yield, reduce cost.
The local, electron beam top of the present invention adds thermocoagulation polysilicon knot screen, including body of heater, in body of heater, bottom is provided with graphite base, graphite base is furnished with the crucible loading polycrystalline silicon material, in body of heater, it is positioned at crucible periphery is provided with the calandria connected with system control device, being provided with electron gun in upper of furnace body, the electron beam produced during electron gun work just points to the inner side of crucible.
Locally add thermocoagulation polysilicon knot screen adds thermocoagulation impurity-removing method to polysilicon at the electron beam top that utilizes of the present invention, and step is as follows:
(1), loading polycrystalline silicon material in crucible, and crucible is placed on graphite base, close fire door, pumping high vacuum, vacuum is less than 0.1Pa；
(2), check equipment parameters, confirm errorless after bring into operation program；
(3), after temperature reaches 1420-1480 DEG C, entering keeping warm mode, temperature retention time is 1-2 hour, until after occurring that silicon material is completely melt phenomenon, and see that silicon material is completely in liquid, entrance crystal growing stage by observation window；
, crystal growing stage, measure a solid liquid interface height by each hour of quartz pushrod, and control the speed of growth of solid liquid interface；
(5), when the position of solid-liquid interface arrives the position away from 3-8 centimetre of silicon liquid top, setting program temperature control reduces the speed of growth of solid liquid interface, the Electron Beam spot diameter of adjustment electron gun makes beam spot be radiated on silicon liquid liquid level and irradiated area accounts for the 1/3 of silicon liquid liquid level, by adjusting beam spot and line size, solid liquid interface is made to form convex, i.e. entering the centripetal growth course centered by beam spot, line size controls between 300-500mA；
, cooling stage, silicon ingot is cooled to design temperature and comes out of the stove；
(7), cut off the highly dense impurity range part of projection.
Polysilicon is purified and ingot casting by the knot screen utilizing the present invention, silicon liquid during long crystalline substance under the effect of electron beam, produce uneven thermal field, beam spot irradiation area retarded coagulation, makes the direction of molten silicon solidification there occurs change, causes molten silicon centered by beam spot, form centripetal solidification, due to the pyrocondensation cold expanding of silicon materials, silicon ingot top height impurity range final set forms projection, and the high impurity purifying molding rearward projection goes to be easily handled.Electron beam provides thermal source for regional area, the most easily controllable, improves yield, reduces cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the specific embodiment of the invention.
Detailed description of the invention
As shown in Figure 1: the local, electron beam top of the present invention adds thermocoagulation polysilicon knot screen, including body of heater 3, in body of heater 3, bottom is provided with graphite base 4, graphite base 4 is furnished with the crucible 2 loading polycrystalline silicon material, in body of heater 3, it is positioned at crucible 2 periphery is provided with the calandria 1 connected with system control device, being provided with electron gun 7 on body of heater 3 top, the electron beam produced when electron gun 7 works just points to the inner side of crucible 2.
The above-mentioned knot screen that utilizes of the present invention adds thermocoagulation impurity-removing method to polysilicon, and step is as follows:
(1), loading polycrystalline silicon material in crucible 2, and crucible 2 is placed on graphite base 4, close the fire door of body of heater 3, pumping high vacuum, vacuum is less than 0.1Pa；
(2), check equipment parameters, confirm errorless after bring into operation program；
(3), after temperature reaches 1420-1480 DEG C, entering keeping warm mode, temperature retention time is 1-2 hour, until after occurring that silicon material is completely melt phenomenon, and see that silicon material is completely in liquid, entrance crystal growing stage by observation window；
, crystal growing stage, measure solid liquid interface 6 height by each hour of quartz pushrod, and control the speed of growth of solid liquid interface；
(5), when solid liquid interface 6 position arrives the position away from 3-8 centimetre of silicon liquid top, setting program temperature control reduces the speed of growth of solid liquid interface, the beam spot diameter, of the electron beam 8 adjusting electron gun 7 generation makes beam spot be radiated on silicon liquid liquid level and irradiated area accounts for the 1/3 of silicon liquid liquid level, by adjusting beam spot and line size, solid liquid interface is made to form convex 5, i.e. enter the centripetal growth course centered by beam spot, line size controls at 300mA or 350mA or 400mA or 450mA or 500mA, i.e. between 300-500mA；
, cooling stage, silicon ingot is cooled to design temperature and comes out of the stove；
(7), cut off the highly dense impurity range part of projection.
Claims (1)
1. one kind utilizes local, electron beam top to add thermocoagulation polysilicon knot screen polysilicon adds thermocoagulation impurity-removing method, it is characterized in that: described local, electron beam top adds thermocoagulation polysilicon knot screen and includes body of heater (3), in body of heater (3), bottom is provided with graphite base (4), graphite base (4) is furnished with the crucible (2) loading polycrystalline silicon material, in body of heater (3), it is positioned at crucible (2) periphery is provided with the calandria (1) connected with system control device, it is characterized in that: on body of heater (3) top, electron gun (7) is installed, the electron beam produced during electron gun (7) work just points to the inner side of crucible (2)；
Described impurity-removing method step is as follows:
(1), loading polycrystalline silicon material in crucible (2), and crucible (2) is placed on graphite base (4), close fire door, pumping high vacuum, vacuum is less than 0.1Pa；
(2), check equipment parameters, confirm errorless after bring into operation program；
(3), after temperature reaches 1420-1480 DEG C, entering keeping warm mode, temperature retention time is 1-2 hour, until after occurring that silicon material is completely melt phenomenon, and see that silicon material is completely in liquid, entrance crystal growing stage by observation window；
, crystal growing stage, measure a solid liquid interface height by each hour of quartz pushrod, and control the speed of growth of solid liquid interface；
(5), when the position of solid-liquid interface arrives the position away from 3-8 centimetre of silicon liquid top, setting program temperature control reduces the speed of growth of solid liquid interface, the Electron Beam spot diameter of adjustment electron gun (7) makes beam spot be radiated on silicon liquid liquid level and irradiated area accounts for the 1/3 of silicon liquid liquid level, by adjusting beam spot and line size, solid liquid interface is made to form convex, i.e. entering the centripetal growth course centered by beam spot, line size controls between 300-500mA；
, cooling stage, silicon ingot is cooled to design temperature and comes out of the stove；
(7), cut off the highly dense impurity range part of projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410339745.0A CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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| CN201410339745.0A CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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| CN104131338A CN104131338A (en) | 2014-11-05 |
| CN104131338B true CN104131338B (en) | 2016-08-24 |
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| CN201410339745.0A Expired - Fee Related CN104131338B (en) | 2014-07-17 | 2014-07-17 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
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| CN1099434A (en) * | 1993-07-15 | 1995-03-01 | 瓦克化学电子工业原料有限公司 | Process for producing rods or blocks of semiconductor material which expands on solidification by crystallization of a melt produced from granular material, and also an apparatus for carrying out..... |
| CN1167728A (en) * | 1996-03-19 | 1997-12-17 | 川崎制铁株式会社 | Process and apparatus for refining silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| KR20130119398A (en) * | 2013-09-26 | 2013-10-31 | 한국에너지기술연구원 | Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar |
| CN103435043A (en) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
| CN203440096U (en) * | 2013-08-28 | 2014-02-19 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and crystal growing technology |
| CN203559160U (en) * | 2013-11-22 | 2014-04-23 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting |
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2014
- 2014-07-17 CN CN201410339745.0A patent/CN104131338B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099434A (en) * | 1993-07-15 | 1995-03-01 | 瓦克化学电子工业原料有限公司 | Process for producing rods or blocks of semiconductor material which expands on solidification by crystallization of a melt produced from granular material, and also an apparatus for carrying out..... |
| CN1167728A (en) * | 1996-03-19 | 1997-12-17 | 川崎制铁株式会社 | Process and apparatus for refining silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| CN103435043A (en) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology |
| CN203440096U (en) * | 2013-08-28 | 2014-02-19 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron-beam smelting technology and crystal growing technology |
| KR20130119398A (en) * | 2013-09-26 | 2013-10-31 | 한국에너지기술연구원 | Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar |
| CN203559160U (en) * | 2013-11-22 | 2014-04-23 | 青岛隆盛晶硅科技有限公司 | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting |
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