CN103337479A - 一种阵列基板、显示装置及阵列基板的制作方法 - Google Patents

一种阵列基板、显示装置及阵列基板的制作方法 Download PDF

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CN103337479A
CN103337479A CN201310282242XA CN201310282242A CN103337479A CN 103337479 A CN103337479 A CN 103337479A CN 201310282242X A CN201310282242X A CN 201310282242XA CN 201310282242 A CN201310282242 A CN 201310282242A CN 103337479 A CN103337479 A CN 103337479A
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CN103337479B (zh
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徐向阳
杜雷
王盛
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Hefei BOE Optoelectronics Technology Co Ltd
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Priority to EP13861521.6A priority patent/EP3018704B1/en
Priority to PCT/CN2013/088420 priority patent/WO2015000256A1/zh
Priority to US14/367,367 priority patent/US9608118B2/en
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Abstract

本发明公开了一种阵列基板、显示装置及阵列基板的制作方法，阵列基板包括一基板和形成在基板上的薄膜场效应晶体管和数据线，所述薄膜场效应晶体管包括栅电极、有源层、源电极和漏电极，所述栅电极和所述有源层之间形成有栅绝缘层，所述阵列基板包括：保护层，形成于所述栅绝缘层与所述数据线之间，且与所述数据线直接接触；所述保护层与所述有源层同层设置且材料相同。本发明实施例有益效果如下：数据线与栅绝缘层之间设置保护层，数据线与保护层直接接触，保护层与数据线之间不存在间隙气泡，当进行数据线刻蚀时，保护层对数据线进行保护，避免数据线被腐蚀而出现断裂。

Description

一种阵列基板、显示装置及阵列基板的制作方法
技术领域
本发明涉及平板显示器制造领域，尤其涉及一种阵列基板、显示装置及阵列基板的制作方法。
背景技术
平板显示器已取代笨重的CRT显示器日益深入人们的日常生活中。目前，常用的平板显示器包括液晶显示器(Liquid Crystal Display，LCD)和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器。上述平板显示器具有体积小、功耗低、无辐射等特点，在当前的平板显示器市场中占据了主导地位。
阵列基板是显示器的重要组成部分，其中薄膜场效应晶体管（Thin FilmTransistor，TFT）阵列基板是目前广泛应用的一种类型的阵列基板。对于TFT阵列基板而言，TFT开关通常由栅电极、源漏电极以及与源漏电极电连接的有源层组成，有源层之上设置有阻挡层。在形成源漏电极时，阻挡层用于保护有源层不被破坏，从而提高TFT开关的性能。而数据线通常与源漏电极设置于同一金属层，栅线与栅电极设置于同一金属层，参考图1所示的数据线与栅线交叠处的剖面示意图，包括数据线1、栅线2、栅绝缘层3和阻挡层4。其中，栅极绝缘层3和阻挡层4通常采用SiOx或SiOx/SiNx，其致密性较差，因此，栅绝缘层3或阻挡层4与相邻的金属层之间的接触面会存在气泡状间隙（例如图1所示的数据线1与阻挡层4之间），在刻蚀数据线时，由于阻挡层与形成数据线的金属之间的接触面存在气泡状间隙，因此刻蚀液会沿着这些气泡状间隙渗入到阻挡层与数据线的接触面，使数据线被腐蚀，造成数据线断裂，该不良现象在爬坡处尤为严重，该爬坡处可以理解为栅绝缘层或阻挡层上高度变化的位置，通常与栅电极或栅线的位置对应（例如图1所示的数据线1与栅线2交叠处的爬坡处5，高度由低到高变化，形成爬坡）。
发明内容
本发明的目的是提供一种阵列基板、显示装置及阵列基板的制作方法，解决现有技术中阻挡层与形成数据线的金属之间的接触面存在气泡状间隙，进行数据线刻蚀时，容易出现数据线断裂的问题。
本发明的目的是通过以下技术方案实现的：
本发明实施例提供一种阵列基板，包括一基板和形成在基板上的薄膜场效应晶体管（Thin Film Transistor，TFT）和数据线，所述薄膜场效应晶体管包括栅电极、有源层、源电极和漏电极，所述栅电极和所述有源层之间形成有栅绝缘层，所述阵列基板包括：
保护层，形成于所述栅绝缘层与所述数据线之间，且与所述数据线直接接触；所述保护层与所述有源层同层设置且材料相同。
优选的，所述保护层为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO。
优选的，所述保护层的厚度为
Figure BDA00003469289800021
优选的，所述薄膜场效应晶体管为底栅型薄膜场效应晶体管。
优选的，包括阻挡层，形成于所述有源层之上以及所述保护层之外的栅绝缘层之上。
优选的，包括像素电极、公共电极和形成于所述像素电极和所述公共电极之间的钝化层，所述像素电极形成于所述阻挡层之上。
优选的，包括阻挡层，所述阻挡层仅形成于所述有源层之上。
优选的，包括像素电极、公共电极和形成于所述像素电极和所述公共电极之间的钝化层，所述像素电极形成于所述栅绝缘层之上，所述像素电极与所述漏极电连接。
优选的，包括与所述栅电极同层设置且同步形成的栅线，所述栅线的位置与所述保护层的位置对应。
本实施例有益效果如下：数据线与栅绝缘层之间设置与二者直接接触的保护层，保护层与数据线之间不存在间隙气泡且具有较强的抗腐蚀能力，当进行数据线刻蚀时，对数据线进行保护，避免数据线被腐蚀而出现断裂；同时金属保护层的材料为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO，其柔软性优于金属材料，在爬坡处不宜断裂，也有助于减少数据线出现断裂。
本发明实施例提供一种显示装置，包括如上述的阵列基板。
本发明实施例提供一种阵列基板的制作方法，包括：
提供一基板，基板上形成有薄膜场效应晶体管的栅极，栅极所在的第一金属层之上形成有栅绝缘层；
在提供的基板上，形成保护层的薄膜，通过构图工艺形成包括所述保护层的图案；
在形成所述保护层的基板上，形成第二金属层的薄膜，通过构图工艺形成包括数据线的图案，所述数据线与所述保护层直接接触；
其中，所述薄膜场效应晶体管的有源层与所述保护层同层设置且材料相同，所述薄膜场效应晶体管的源电极、漏电极和所述数据线同层设置且同步完成。
优选的，在形成所述第二金属层的基板上，形成阻挡层的薄膜，通过构图工艺形成包括阻挡层的图形。
优选的，在形成所述阻挡层的基板上，形成第一导电薄膜，通过构图工艺形成包括像素电极的图形，且所述像素电极与所述漏电极电连接；
在形成所述像素电极的基板上，形成钝化层；
在形成所述钝化层的基板上，形成第二导电薄膜，通过构图工艺形成包括公共电极的图形。
优选的，阵列基板的栅线与所述栅电极同层设置且同步形成，所述栅线的位置与所述保护层的位置对应。
本发明实施例有益效果如下：在数据线与栅绝缘层之间不设置阻挡层，而是在数据线与栅绝缘层之间设置与二者直接接触的保护层，保护层与数据线之间不存在间隙气泡且具有较强的抗腐蚀能力，当进行数据线刻蚀时，对数据线进行保护，避免数据线被腐蚀而出现断裂；同时金属保护层的材料为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO，其柔软性优于金属材料，在爬坡处不宜断裂，也有助于减少数据线出现断裂。
附图说明
图1为现有技术的阵列基板中数据线与栅线交叠处的剖面示意图；
图2为本发明实施例所述阵列基板的结构示意图；
图3为本发明实施例所述另一阵列基板的结构示意图；
图4为本发明实施例所述阵列基板的制作方法的流程图。
附图标记：
101基板；102栅电极；103栅线；104栅绝缘层；105有源层；106阻挡层；107数据线；1082源电极；1081漏电极；109像素电极；110钝化层；111公共电极；112保护层。
具体实施方式
下面结合说明书附图对本发明实施例的实现过程进行详细说明。需要注意的是，自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
参见图2，本发明实施例提供一种阵列基板，包括一基板101，基板上形成有薄膜场效应晶体管TFT和数据线107，TFT包括栅电极102、有源层105、源电极1082和漏电极1081；栅电极102和有源层105之间形成有栅绝缘层104；阵列基板包括保护层112，该保护层112形成于栅绝缘层104与数据线107之间，且与数据线107直接接触；该保护层112与有源层105同层设置且材料相同。当然保护层112的面积视实际设计要求而定，以能实现保护数据线为目的。
优选的，保护层112材料为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO中的任意一种。
优选的，保护层112的厚度为
Figure BDA00003469289800051
优选的，本实施例中的TFT为底栅型TFT。
优选的，该阵列基板包括阻挡层106，形成于有源层105之上以及保护层112之外的栅绝缘层104之上。在本实施例中，阻挡层106仍然覆盖栅绝缘层104的部分区域，阻挡层106与保护层112所在区域对应的区域被去除。当然，在不考虑阵列基板整体的厚度以及各区域厚度的均匀性的情况下，阻挡层106与保护层112所在区域对应的区域也可以保留。
优选的，包括像素电极109、公共电极111和形成于像素电极109和公共电极111之间的钝化层110，像素电极109形成于阻挡层106之上，像素电极109与漏电极1081电连接。
优选的，包括与栅电极102同层设置且同步形成的栅线103，栅线103的位置与保护层112的位置对应。
本实施例有益效果如下：数据线与栅绝缘层之间设置有保护层，保护层直接与数据线接触，由于保护层采用与有源层相同的半导体材料制作，因此其致密度高于栅绝缘层，保护层与数据线之间不存在间隙气泡且具有较强的抗腐蚀能力，当进行数据线刻蚀时，对数据线进行保护，避免数据线被腐蚀而出现断裂；同时金属保护层的材料为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO，其柔软性优于金属材料，在爬坡处不宜断裂，也有助于减少数据线出现断裂。
参见图3，本发明实施例另一种阵列基板，仍以底栅型的TFT为例进行说明。该阵列基板包括一基板101，基板上形成有栅电极102、栅线103、栅绝缘层104、有源层105、数据线107、源电极1082、漏电极1081、像素电极109、钝化层110和公共电极111；栅线103与数据线107交叉设置且位于彼此绝缘的不同层；其中，栅电极102、有源层105、源电极1082和漏电极1081组成TFT；该阵列基板包括：
包括保护层112，该保护层112形成于栅绝缘层104与数据线107之间，且与数据线107直接接触；该保护层112与有源层105同层设置且材料相同。与前一实施例的不同之处于，阻挡层106仅形成于有源层105之上，在其他区域并未设置阻挡层106，这将有助于减小该阵列基板的厚度。由于阻挡层106仅形成于有源层105之上，相应的，所述像素电极形成于所述栅绝缘层之上。
本实施例有益效果如下：数据线与栅绝缘层之间设置有保护层，保护层直接与数据线接触，由于保护层采用与有源层相同的半导体材料制作，因此其致密度高于栅绝缘层，保护层与数据线之间不存在间隙气泡且具有较强的抗腐蚀能力，当进行数据线刻蚀时，对数据线进行保护，避免数据线被腐蚀而出现断裂；仅在有源层之上形成该保护层，有助于减小该阵列基板的厚度。
以上仅为本发明优选的两个实施例，本发明的思想同样适用于共面型TFT阵列基板、背沟道刻蚀型阵列基板和顶栅型阵列基板，在此不一一举例。
本发明实施例提供一种显示装置，包括如上述实施例的阵列基板。
参见图4，本发明实施例提供一种阵列基板的制作方法，包括：
S101，提供一基板，基板上形成有薄膜场效应晶体管的栅极，栅极所在的第一金属层之上形成有栅绝缘层。
S102，在提供的基板上，形成保护层的薄膜，通过构图工艺形成包括保护层的图案。
S103，在形成保护层的基板上，形成第二金属层的薄膜，通过构图工艺形成包括数据线的图案，数据线与保护层直接接触；
其中，薄膜场效应晶体管的有源层与保护层同层设置且材料相同，薄膜场效应晶体管的源电极、漏电极和数据线同层设置且同步完成。
优选的，包括S104，在形成第二金属层的基板上，形成阻挡层的薄膜，通过构图工艺形成包括阻挡层的图形。
优选的，包括S105，在形成阻挡层的基板上，形成第一导电薄膜，通过构图工艺形成包括像素电极的图形，且像素电极与漏电极电连接；
包括S106，在形成像素电极的基板上，形成钝化层；
包括S107，在形成钝化层的基板上，形成第二导电薄膜，通过构图工艺形成包括公共电极的图形。
优选的，阵列基板的栅线与栅电极同层设置且同步形成，栅线的位置与保护层的位置对应。
本发明实施例有益效果如下：在数据线与栅绝缘层之间不设置阻挡层，而是在数据线与栅绝缘层之间设置与二者直接接触的保护层，当进行数据线刻蚀时，保护层对数据线进行保护，避免数据线被腐蚀而出现断裂；同时保护层也有助于减少数据线在爬坡处出现断裂。
本发明实施例提供一种阵列基板的制作方法，较具体的步骤如下：
步骤一，提供一基板，在基板上沉积第一金属层薄膜，通过一次构图工艺形成包括栅电极和栅线的图案；
步骤二、在完成步骤一的基板上形成栅绝缘层；
步骤三、在完成步骤二的基板上形成包括有源层、保护层的薄膜，通过构图工艺形成包括有源层、保护层的图案；
步骤四、在完成步骤三的基板上形成阻挡层；
步骤五、在完成步骤四的基板上形成第二金属层薄膜，通过一次构图工艺形成包括源电极、漏电极及数据线的图案；
步骤六、在完成步骤五的基板上形成像素电极层薄膜，通过一次构图工艺形成像素电极，且像素电极与漏电极电连接；
步骤七、在完成步骤六的基板上形成钝化层；
步骤八、在完成步骤七的基板上形成透明导电层薄膜，通过一次构图工艺形成公共电极的图案。
优选的，步骤四中，阻挡层形成于有源层之上、以及保护层之外的栅绝缘层之上；或者，阻挡层仅形成于有源层之上。
优选的步骤三中，保护层与有源层为同步设置且同步形成。
优选的保护层与有源层彼此绝缘。
优选的保护层为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO。
优选的保护层的厚度为
Figure BDA00003469289800081
该方法中的构图工艺具体包括：光刻胶的涂覆、曝光、显影和光刻胶去除等步骤。
本实施例有益效果如下：数据线与栅绝缘层之间设置有保护层，保护层直接与数据线接触，由于保护层采用与有源层相同的半导体材料制作，因此其致密度高于栅绝缘层，保护层与数据线之间不存在间隙气泡且具有较强的抗腐蚀能力，当进行数据线刻蚀时，对数据线进行保护，避免数据线被腐蚀而出现断裂；同时金属保护层的材料为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO，其柔软性优于金属材料，在爬坡处不宜断裂，也有助于减少数据线出现断裂。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (14)

1.一种阵列基板，包括一基板和形成在基板上的薄膜场效应晶体管和数据线，所述薄膜场效应晶体管包括栅电极、有源层、源电极和漏电极，所述栅电极和所述有源层之间形成有栅绝缘层，其特征在于，所述阵列基板包括：
保护层，形成于所述栅绝缘层与所述数据线之间，且与所述数据线直接接触；所述保护层与所述有源层同层设置且材料相同。
2.如权利要求1所述的阵列基板，其特征在于，所述保护层为ZnO、InZnO、ZnSnO、GaInZnO或ZrInZnO。
3.如权利要求2所述的阵列基板，其特征在于，所述保护层的厚度为200
Figure FDA00003469289700011
～2000
Figure FDA00003469289700012
4.如权利要求1所述的阵列基板，其特征在于，所述薄膜场效应晶体管为底栅型薄膜场效应晶体管。
5.如权利要求1所述的阵列基板，其特征在于，包括阻挡层，形成于所述有源层之上以及所述保护层之外的栅绝缘层之上。
6.如权利要求5所述的阵列基板，其特征在于，包括像素电极、公共电极和形成于所述像素电极和所述公共电极之间的钝化层，所述像素电极形成于所述阻挡层之上，所述像素电极与所述漏极电连接。
7.如权利要求1所述的阵列基板，其特征在于，包括阻挡层，所述阻挡层形成于所述有源层上位于后续形成的源、漏电极之间的区域。
8.如权利要求7所述的阵列基板，其特征在于，包括像素电极、公共电极和形成于所述像素电极和所述公共电极之间的钝化层，所述像素电极形成于所述栅绝缘层之上。
9.如权利要求1所述的阵列基板，其特征在于，包括与所述栅电极同层设置且同步形成的栅线，所述栅线的位置与所述保护层的位置对应。
10.一种显示装置，其特征在于，包括如权利要求1至9任一项所述的阵列基板。
11.一种阵列基板的制作方法，其特征在于，包括：
提供一基板，基板上形成有薄膜场效应晶体管的栅极，栅极所在的第一金属层之上形成有栅绝缘层；
在基板上，形成保护层的薄膜，通过构图工艺形成包括所述保护层的图案；
在形成所述保护层的基板上，形成第二金属层的薄膜，通过构图工艺形成包括数据线的图案，所述数据线与所述保护层直接接触；
其中，所述薄膜场效应晶体管的有源层与所述保护层同层设置且材料相同，所述薄膜场效应晶体管的源电极、漏电极和所述数据线同层设置且同步完成。
12.如权利要求11所述的方法，其特征在于，包括：
在形成所述第二金属层的基板上，形成阻挡层的薄膜，通过构图工艺形成包括阻挡层的图形。
13.如权利要求12所述的方法，其特征在于，包括：
在形成所述阻挡层的基板上，形成第一导电薄膜，通过构图工艺形成包括像素电极的图形，且所述像素电极与所述漏电极电连接；
在形成所述像素电极的基板上，形成钝化层；
在形成所述钝化层的基板上，形成第二导电薄膜，通过构图工艺形成包括公共电极的图形。
14.如权利要求11所述的方法，其特征在于，阵列基板的栅线与所述栅电极同层设置且同步形成，所述栅线的位置与所述保护层的位置对应。
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