CN103294872A - Memristor equivalent circuit and construction method thereof - Google Patents
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Abstract
The invention discloses a memristor equivalent circuit and a construction method thereof. At present, a memristor behavior model cannot be achieved by setting up a circuit directly with existing electronic components, and only software can be used for carrying out simulation study on memristor characteristics. The input end of a voltage follower of the memristor equivalent circuit is connected with a positive end of a memristor and a mirror image end of an image current source, and the output end of the voltage follower is connected with the input end of a reverse circuit and one input end of a multiplying unit. The output end of the reverse circuit is connected with the input end of an integral circuit, the output end of the integral circuit is connected with the input end of a clamping circuit, the output end of the clamping circuit is connected with the input end of an index circuit, the output end of the index circuit is connected with the other input end of the multiplying unit, the output end of the multiplying unit is connected with the input end of the image current source, and the output end of the image current source is connected with the negative end of the memristor. The memristor equivalent circuit is easy to achieve, accurate and effective, electrical characteristics are consistent with those of the behavior model of the magnetic control memristor, experimental study on the characteristics of the memristor is carried out conveniently.
Description
Technical field
The present invention is specifically related to a kind of memristor equivalent electrical circuit and construction method thereof, belongs to the memristor technical field.
Background technology
Memristor (memrsitor) is a kind of novel passive nonlinear circuit component with non-volatile memory function, 1971 scientist Cai Shaotang of Chinese origin (Chua L O) concept of memristor is proposed first, the scientist in U.S. HP laboratory in 2008 produces the memristor element of first nanoscale in the laboratory.Memristor has resistance to be changed along with the electric charge of flowing through, and when no impressed voltage, resistance value can obtain the characteristics of " memory ", and this characteristic can be directly as Nonvolatile resistance variation memory (ReRAM).In addition, people prediction, memristor has potential application prospect in fields such as artificial intelligence and neural network, Computers and Communication technology, microelectronics, fault-tolerant technique.
People such as Daniel Batas have proposed a kind of magnetic control memristor and modeling method (Daniel Batas thereof, and Horst Fiedler, A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling, IEEE Transactions on Nanotechnology[J], vol. 10, pp.250-255, March 2011.), they are on the basis to the TiO2 memristor modeling and simulating in HP laboratory, propose a kind of magnetic control memristor model, and set up the circuit behavior model based on SPICE.Although simulation result shows the V-I family curve of this model and has the typical case of memristor " hysteresis " characteristic that this model is the macro model of realizing with desirable controlled source and votage control switch, and is still far away apart from the circuit realization, can't launch the experimental study to the memristor characteristic.
Because the expensive and technical difficulty that nano-device is made, occur as yet so far can commercialization the memristor product, this has limited the applied research of people to memristor.Even produce nano level memristor product, the difficulty of carrying out the memristor Performance Experiment at nanoscale is big too.The memristor behavior model can't directly be built circuit with ready-made electronic devices and components and realize, can only carry out simulation study to the memristor characteristic with software.Therefore, according to the circuit behavior model structure equivalent-circuit model of memristor, be the alternative approach that at present memristor is launched experimental study.Summary of the invention the present invention is intended to overcome the defective that the memristor behavior model can only be carried out simulation study with software, and a kind of memristor equivalent electrical circuit and construction method thereof are provided.
A kind of memristor equivalent electrical circuit of the present invention comprises voltage follower, negative circuit, integrating circuit, clamp circuit, exponent circuit, multiplier, mirror current source composition.
The voltage follower input end is connected with the mirror image end of memristor anode, mirror current source, the voltage follower output terminal is connected with an input end of negater circuit input end, multiplier, the negater circuit output terminal is connected with the integrating circuit input end, the integrating circuit output terminal is connected with the clamp circuit input end, the clamp circuit output terminal connects the exponent circuit input end, another input end of exponent circuit output terminal and multiplier is connected, the multiplier output terminal links to each other with the input end of mirror current source, and the output terminal of mirror current source is connected with the negative terminal of memristor;
Described mirror current source comprises first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first operating amplifier with current feedback U1 and the second operating amplifier with current feedback U2; The first operating amplifier with current feedback U1 and the second operating amplifier with current feedback U2 model are AD844.
One end of described first resistance R 1 is connected with 3 pin of the first operating amplifier with current feedback U1 and as the input end S2 of mirror current source, the other end is connected with 2 pin of the second operating amplifier with current feedback U2; One end of second resistance R 2 is connected with 2 pin of the first operating amplifier with current feedback U1, and the other end is connected with 3 pin of the second operating amplifier with current feedback U2 and ground connection; One end of the 3rd resistance R 3 is connected other end ground connection with 6 pin of the first operating amplifier with current feedback U1; One end of the 4th resistance R 4 is connected with 5 pin of the first operating amplifier with current feedback U1, and the other end is as the mirror image end S1 of mirror current source; 7 pin of the first operating amplifier with current feedback U1 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts; One end of the 6th resistance R 6 is connected other end ground connection with 6 pin of the second operating amplifier with current feedback U2; One end of the 5th resistance R 5 is connected with 5 pin of the second operating amplifier with current feedback U2, and the other end is as the output terminal S3 of mirror current source; 7 pin of the second operating amplifier with current feedback U2 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts;
A kind of construction method of memristor equivalent electrical circuit may further comprise the steps:
(1) analyzes the state equation of memristor, the inner doping boundary coordinate of memristor is represented with node voltage, again boundary coordinate voltage substitution memristor
V-ICharacteristic equation is obtained the memristor of being with parameter
V-IRelation equation, described parameter are boundary coordinate voltage;
(2) according to the parameter equation of memristor
, with negater circuit and integrating circuit output parameter voltage
, and then with clamp circuit with parameter voltage
Be clamped at 0 and 1V between;
Be the normalization original depth of memristor doped region,
Be the average mobility of ion, D is thickness of semiconductor film,
Be memristor input transient voltage, t is that memristor is by the time of electric current;
(3) by formula
The coefficient of gauge index function
k, according to the magnetic control memristor
V-IThe characteristic formula
, usefulness exponent circuit and multiplier circuit realization memristor
V-IRelation.
R OFF Be the maximum resistance of memristor,
R ON Be the minimum resistance of memristor,
Be the electric current of memristor,
Impressed voltage for memristor;
(4) multiplier output current i (t) forms the memristor electric current by mirror current source
, the voltage follower of memristor input end realizes that by operational amplifier its input current is 0, all flows to the mirror image end of mirror current source with the electric current that guarantees to flow through the memristor plus end, and the multiplier output current is equated with the memristor electric current.
The behavior model equivalence of the present invention and memristor, circuit are easy to realize and accurate and effective that electrical specification is consistent with the behavior model of magnetic control memristor, convenient characteristic spread experimental study to memristor.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the realization circuit of mirror current source.
Embodiment
As Fig. 1, shown in Figure 2, a kind of memristor equivalent electrical circuit of the present invention comprises voltage follower 1, negative circuit 2, integrating circuit 3, clamp circuit 4, exponent circuit 5, multiplier 6, mirror current source 7 compositions.
Described mirror current source 7 comprises first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first operating amplifier with current feedback U1 and the second operating amplifier with current feedback U2;
One end of described first resistance R 1 is connected with 3 pin of the first operating amplifier with current feedback U1 and as the input end S2 of mirror current source, the other end is connected with 2 pin of the second operating amplifier with current feedback U2; One end of second resistance R 2 is connected with 2 pin of the first operating amplifier with current feedback U1, and the other end is connected with 3 pin of the second operating amplifier with current feedback U2 and ground connection; One end of the 3rd resistance R 3 is connected other end ground connection with 6 pin of the first operating amplifier with current feedback U1; One end of the 4th resistance R 4 is connected with 5 pin of the first operating amplifier with current feedback U1, and the other end is as the mirror image end S1 of mirror current source; 7 pin of the first operating amplifier with current feedback U1 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts; One end of the 6th resistance R 6 is connected other end ground connection with 6 pin of the second operating amplifier with current feedback U2; One end of the 5th resistance R 5 is connected with 5 pin of the second operating amplifier with current feedback U2, and the other end is as the output terminal S3 of mirror current source; 7 pin of the second operating amplifier with current feedback U2 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts;
The present invention is with 1V, and it is example that the 1Hz sine signal source acts on the memristor two ends, further specifies a kind of construction method of memristor equivalent electrical circuit.
Voltage follower among Fig. 1, negater circuit, integrating circuit, exponent circuit can realize that clamp circuit is realized with diode, multiplier AD633 with operational amplifier TL084.Concrete steps are as follows:
1. the inner doping boundary coordinate of memristor node voltage
v(
X ')Expression,
In the formula (1),
Integral coefficient for integrator.
(2)
In the formula (2),
Be the average mobility of ion, value is 10
-10Cm
2/ Vs; D is thickness of semiconductor film, is 10nm.
2.
v(
X ')Behind the clamp circuit clamp, the clamp circuit output voltage
V (x)With input voltage
v(
X ')Between the pass be
The voltage that characterizes the node x of parameter is
In the formula (4),
x 0 Be node
xInitial voltage, the normalization original depth of simulation memristor doped region gets 0.01.
3. the index coefficient k of gauge index circuit is as memristor minimum resistance R
ONBe 100 Ω, when the memristor maximum resistance is 16k Ω, by formula
, can calculate k ≈ 5.1, obtain memristor
V-IRelation.
4. mirror current source is realized with the circuit of Fig. 2.U1, U2 adopt operating amplifier with current feedback AD844, satisfy following relation between its each terminal:
In formula (5) ~ (8), the subscript of electric current and voltage is represented integrated circuit pin number.
With the memristor simulation circuit model of above step structure and the simulation result equivalence of memristor behavior model, the memristor simulation circuit model that provides has satisfied the requirement that memristor is experimentized and studies.
Claims (2)
1. a memristor equivalent electrical circuit comprises voltage follower, negative circuit, integrating circuit, clamp circuit, exponent circuit, multiplier and mirror current source;
It is characterized in that: described voltage follower input end and memristor anode, the mirror image end of mirror current source connects, voltage follower output terminal and negater circuit input end, an input end of multiplier connects, the negater circuit output terminal is connected with the integrating circuit input end, the integrating circuit output terminal is connected with the clamp circuit input end, the clamp circuit output terminal connects the exponent circuit input end, another input end of exponent circuit output terminal and multiplier is connected, the multiplier output terminal links to each other with the input end of mirror current source, and the output terminal of mirror current source is connected with the negative terminal of memristor;
Described mirror current source comprises first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first operating amplifier with current feedback U1 and the second operating amplifier with current feedback U2; The first operating amplifier with current feedback U1 and the second operating amplifier with current feedback U2 model are AD844;
One end of described first resistance R 1 is connected with 3 pin of the first operating amplifier with current feedback U1 and as the input end S2 of mirror current source, the other end is connected with 2 pin of the second operating amplifier with current feedback U2; One end of second resistance R 2 is connected with 2 pin of the first operating amplifier with current feedback U1, and the other end is connected with 3 pin of the second operating amplifier with current feedback U2 and ground connection; One end of the 3rd resistance R 3 is connected other end ground connection with 6 pin of the first operating amplifier with current feedback U1; One end of the 4th resistance R 4 is connected with 5 pin of the first operating amplifier with current feedback U1, and the other end is as the mirror image end S1 of mirror current source; 7 pin of the first operating amplifier with current feedback U1 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts; One end of the 6th resistance R 6 is connected other end ground connection with 6 pin of the second operating amplifier with current feedback U2; One end of the 5th resistance R 5 is connected with 5 pin of the second operating amplifier with current feedback U2, and the other end is as the output terminal S3 of mirror current source; 7 pin of the second operating amplifier with current feedback U2 connect+the 15V direct supply, and 4 pin connect-the 15V direct supply, and all the other pins are built on stilts.
2. the construction method of a memristor equivalent electrical circuit is characterized in that, this method may further comprise the steps:
(1) analyzes the ginseng equation of memristor, the inner doping boundary coordinate of memristor is represented with node voltage, again boundary coordinate voltage substitution memristor
V-ICharacteristic equation is obtained the memristor of being with parameter
V-IRelation equation, described parameter are boundary coordinate voltage;
(2) according to the parameter equation of memristor
, with negater circuit and integrating circuit output parameter voltage
, and then with clamp circuit with parameter voltage
Be clamped at 0 and 1V between;
Be the normalization original depth of memristor doped region,
Be the average mobility of ion, D is thickness of semiconductor film,
Be the memristor input voltage, t is that memristor is by the time of electric current;
(3) by formula
The coefficient of gauge index function
k, according to the magnetic control memristor
V-IThe characteristic formula
, usefulness exponent circuit and multiplier circuit realization memristor
V-IRelation;
R OFF Be the maximum resistance of memristor,
R ON Be the minimum resistance of memristor,
Be the electric current of memristor,
Impressed voltage for memristor;
(4) multiplier output current i (t) forms the memristor electric current by mirror current source
, the voltage follower of memristor input end realizes that by operational amplifier its input current is 0, all flows to the mirror image end of mirror current source with the electric current that guarantees to flow through the memristor plus end, and the multiplier output current is equated with the memristor electric current.
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Cited By (16)
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| CN104134383A (en) * | 2014-07-25 | 2014-11-05 | 华北电力大学（保定） | Experimental device for simulating memory resistor element |
| CN104393986A (en) * | 2014-12-03 | 2015-03-04 | 王忠林 | Memristor based four-wing hyper-chaos system establishing method and circuit implementation |
| CN104573183A (en) * | 2014-12-09 | 2015-04-29 | 广西大学 | Realizing circuit of memory container and realizing method of memory container circuit of any order |
| CN104573238A (en) * | 2015-01-09 | 2015-04-29 | 江西理工大学 | Circuit design method for memory resisting cell neural network |
| CN105681022A (en) * | 2016-04-11 | 2016-06-15 | 湘潭大学 | Chaotic circuit controlling cellular neural network based on current mode |
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| CN104134383B (en) * | 2014-07-25 | 2017-01-04 | 华北电力大学（保定） | A kind of experimental provision for simulating memristor element |
| CN107194048A (en) * | 2017-05-09 | 2017-09-22 | 重庆邮电大学 | A kind of equivalent simulation circuit based on HP TiO2 memristor models |
| CN107993686A (en) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | A kind of floatingly voltage-controlled memristor equivalence element |
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Application publication date: 20130911 Assignee: Xinji Technology (Hangzhou) Co.,Ltd. Assignor: HANGZHOU DIANZI University Contract record no.: X2020330000118 Denomination of invention: A construction method of memristor equivalent circuit Granted publication date: 20151209 License type: Common License Record date: 20201217 |
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