CN104134383A - Experimental device for simulating memory resistor element - Google Patents
Experimental device for simulating memory resistor element Download PDFInfo
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- CN104134383A CN104134383A CN201410357989.1A CN201410357989A CN104134383A CN 104134383 A CN104134383 A CN 104134383A CN 201410357989 A CN201410357989 A CN 201410357989A CN 104134383 A CN104134383 A CN 104134383A
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- resistance
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Abstract
The invention provides an experimental device for simulating a memory resistor element. The experimental device comprises an integral circuit, a V/I conversion circuit, a non-linear resistor and a feedback circuit. The V/I conversion circuit comprises two operational amplifiers and five resistors. The in-phase input end of the first operational amplifier is connected with the output end of the integral circuit through the first resistor. The inverted input end of the first operational amplifier is grounded through the second resistor and connected with the output end of the first operational amplifier through the third resistor. The output end of the first operational amplifier is grounded through the fourth resistor and the non-linear resistor in sequence. The second operational amplifier is connected with a voltage follower. The input end of the second operational amplifier is connected between the fourth resistor and the non-linear resistor. The output end of the second operational amplifier is connected with the in-phase input end of the first operational amplifier through the fifth resistor. According to the experimental device, the voltage current characteristics of the nanoscale memory resistor element are successfully simulated through the circuits composed of common circuit components and parts, the problem that experimental teaching about the memory resistor element in the prior art is hard to carry out is well solved, and a practical tool is provided for studies and research of the memory resistor circuit.
Description
Technical field
The present invention relates to a kind of in education experiment, use for simulating the experimental provision of recalling resistance element, belong to experimental apparatus technical field.
Background technology
Memristor is a kind of non-linear resistance with memory function, is relay resistance, electric capacity, inductance the 4th kind of passive basic circuit elements afterwards.As the appearance of the memristor of primary element, will cause structural system, the principle of electronic circuit, the change of design theory, and promote the development of the application that electron trade is new.Memristor (Memristor) is a kind of non-linear resistance being defined by electric charge q and magnetic flux φ.Within 2008, has realized after the device with memristor performance on nanoscale HP Lab, has in succession proposed to realize various physical models or the device of memristor performance.Memristor is in bio-science, artificial neural network, and a plurality of fields such as microelectronics have represented its potential application prospect.
Although recall resistance element, by HP Lab, successfully developed the resistance element of recalling under nanoscale, but because its yardstick is too small, cause for the experiment of recalling resistance element and be difficult to carry out, the study of recalling resistance element can only rest on conceptive, has caused great difficulty to the teaching of recalling resistance element.
Summary of the invention
The object of the invention is to the drawback for prior art, provide a kind of for simulating the experimental provision of recalling resistance element, for research institutions carry out the experimental teaching of recalling resistance element, provide convenience.
Problem of the present invention realizes with following technical proposals:
A kind of for simulating the experimental provision of recalling resistance element, formation comprises integrating circuit, V/I translation circuit, non-linear resistance and feedback circuit, described V/I translation circuit comprises two operational amplifiers and five resistance, the in-phase input end of the first operational amplifier connects the output terminal of integrating circuit through the first resistance, inverting input connects its output terminal through the second resistance eutral grounding and through the 3rd resistance, output terminal is successively through the 4th resistance and non-linear resistance ground connection, the second operational amplifier is connected into voltage follower, its input end is connected between the 4th resistance and non-linear resistance, output terminal connects the in-phase input end of the first operational amplifier through the 5th resistance.
Above-mentioned for simulating the experimental provision of recalling resistance element, described feedback circuit comprises differential capacitance, two operational amplifiers and three resistance, the in-phase input end of the 3rd operational amplifier is through the 6th resistance eutral grounding, inverting input connects its output terminal and is connected between the 4th resistance and non-linear resistance through the 8th resistance through the 7th resistance, four-operational amplifier adopts AD844, its in-phase input end connects the output terminal of the 3rd operational amplifier, inverting input is through differential capacitance ground connection, the input end of TZ termination integrating circuit.
Above-mentioned for simulating the experimental provision of recalling resistance element, described integrating circuit comprises the 5th operational amplifier, integrating capacitor and the 9th resistance, the 5th operational amplifier adopts AD844, its in-phase input end is the input end of integrating circuit, inverting input is through the 9th resistance eutral grounding, and TZ holds through integrating capacitor ground connection.
Above-mentioned for simulating the experimental provision of recalling resistance element, described non-linear resistance is formed by connecting by diode and two resistance, after the tenth resistance and diode are connected in series, is connected in parallel with the 11 resistance again.
The circuit that utilization of the present invention consists of circuit common components and parts such as operational amplifier, resistance has successfully been simulated the volt-ampere characteristic of recalling resistance element under nanoscale, solved well and recalled at present the difficult problem that the experimental teaching of resistance element is difficult to carry out, for study and research, recalling resistance circuit provides utility.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described.
Fig. 1 is the structure of linear two-port network;
The circuit diagram of the two-port network that Fig. 2 is comprised of two controlled sources;
Fig. 3 is electrical schematic diagram of the present invention;
Fig. 4 is simulation result of the present invention.
In figure, each list of reference numerals is: F1～F5, the first operational amplifier～five operational amplifier, D, diode, C1, differential capacitance, C2, integrating capacitor, R1～R11, the first resistance～11 resistance.
Embodiment
According to the definition of recalling resistance element:
, total thinking that resistance element device is recalled in realization is: by building a two-port network that delivery outlet voltage-current relationship is converted to input port electric charge magnetic linkage relation, non-linear resistance is converted to and recalls resistance.
The principle of foundation of the present invention is, is provided with a linear two-port network (as Fig. 1), its transformation parameter equation as the formula (1):
（1）
The circuit diagram (as Fig. 2) that can be comprised of two controlled sources formula (1), as seen from Figure 2, connects a VCCS(Voltage-controlled Current Source at right-hand end), its current value
by formula (2), determined:
（2）
From voltage and magnetic linkage relation:
（3）
Can obtain:
（4）
In like manner, left side connects a VCCS, its electric current
by formula (5), determined:
（5）
（6）
From electric current and electric charge relation:
（7）
Can obtain:
（8）
After two-port network right-hand member access non-linear resistance, its left side port identity has memristor characteristic.Thereby obtain recalling resistance element experimental provision under regular measure.
During specific implementation, utilize the circuit components such as AD844 amplifier and AD826 amplifier and resistance, electric capacity, a non-linear resistance is transformed into a circuit of recalling resistance element, as shown in Figure 3.
Table 1
In Fig. 3, component parameters is as shown in table 1, the output termination of circuit non-linear resistance (by diode D, the tenth resistance R 10 and the 11 resistance R 11, being formed), input termination power, the relation of the voltage and current of this input port has embodied the characteristic of recalling resistance element.Utilize a diode and two resistance to build a non-linear resistance, the voltage of establishing non-linear resistance is
, electric current is
, the voltage and current of establishing input end is respectively
with
, input voltage
through by the 5th operational amplifier F5(operating amplifier with current feedback AD844) after the integrating circuit that forms, voltage signal
become voltage signal
, as the formula (9).Again by the first operational amplifier F1(AD826) and the second operational amplifier F2(AD826) the V/I translation circuit that forms, by voltage signal
change current signal into
, as the formula (10).So far, the relation of input terminal voltage signal and output end current signal is differential relationship.
（9）
（10）
Non-linear resistance side output voltage
by the 3rd operational amplifier F3(AD826) phase inverter that forms, by voltage
anti-phase obtain voltage-
, then pass through by four-operational amplifier F4(operating amplifier with current feedback AD844) differentiating circuit that forms, by voltage signal
after differential, obtain current signal
, from operational amplifier resolution
, the current signal of so far inputting
with output voltage signal
relation be differential relationship as the formula (11).
（11）
By above analysis, between known input voltage and electric current and output voltage and electric current, meet:
，
Thereby the change class device circuit shown in Fig. 3 has been realized a non-linear resistance is transformed to a function of recalling resistance element, simulation result is as Fig. 4.
From simulation result, can find out, the relation of circuit input end voltage and current has embodied the characteristic of recalling resistance element, meets 8-shaped relation.
Claims (4)
1. one kind for simulating the experimental provision of recalling resistance element, it is characterized in that, it comprises integrating circuit, V/I translation circuit, non-linear resistance and feedback circuit, described V/I translation circuit comprises two operational amplifiers and five resistance, the in-phase input end of the first operational amplifier (F1) connects the output terminal of integrating circuit through the first resistance (R1), inverting input connects its output terminal through the second resistance (R2) ground connection and through the 3rd resistance (R3), output terminal is successively through the 4th resistance (R4) and non-linear resistance ground connection, the second operational amplifier (F2) is connected into voltage follower, its input end is connected between the 4th resistance (R4) and non-linear resistance, output terminal connects the in-phase input end of the first operational amplifier (F1) through the 5th resistance (R5).
2. according to claim 1 for simulating the experimental provision of recalling resistance element, it is characterized in that, described feedback circuit comprises differential capacitance (C1), two operational amplifiers and three resistance, the in-phase input end of the 3rd operational amplifier (F3) is through the 6th resistance (R6) ground connection, inverting input connects its output terminal and is connected between the 4th resistance (R4) and non-linear resistance through the 8th resistance (R8) through the 7th resistance (R7), four-operational amplifier (F4) adopts AD844, its in-phase input end connects the output terminal of the 3rd operational amplifier (F3), inverting input is through differential capacitance (C1) ground connection, the input end of TZ termination integrating circuit.
3. according to claim 1 and 2 for simulating the experimental provision of recalling resistance element, it is characterized in that, described integrating circuit comprises the 5th operational amplifier (F5), integrating capacitor (C2) and the 9th resistance (R9), the 5th operational amplifier (F5) adopts AD844, its in-phase input end is the input end of integrating circuit, inverting input is through the 9th resistance (R9) ground connection, and TZ holds through integrating capacitor (C2) ground connection.
4. according to claim 3 for simulating the experimental provision of recalling resistance element, it is characterized in that, described non-linear resistance is formed by connecting by diode (D) and two resistance, and the tenth resistance (R10) is connected in parallel with the 11 resistance (R11) after being connected in series with diode (D) again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410357989.1A CN104134383B (en) | 2014-07-25 | A kind of experimental provision for simulating memristor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410357989.1A CN104134383B (en) | 2014-07-25 | A kind of experimental provision for simulating memristor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104134383A true CN104134383A (en) | 2014-11-05 |
| CN104134383B CN104134383B (en) | 2017-01-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067320A (en) * | 2016-07-07 | 2016-11-02 | 江南大学 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
| CN110797062A (en) * | 2019-09-17 | 2020-02-14 | 华中科技大学 | Memristor read-write circuit and method |
| US11475272B2 (en) * | 2017-03-24 | 2022-10-18 | Denso Corporation | Neural network circuit |
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| US20120175583A1 (en) * | 2002-03-12 | 2012-07-12 | Knowmtech, Llc. | Memristor apparatus |
| CN102623062A (en) * | 2012-04-09 | 2012-08-01 | 武汉科技大学 | Memristor simulation model |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| CN103294872A (en) * | 2013-06-24 | 2013-09-11 | 杭州电子科技大学 | Memristor equivalent circuit and construction method thereof |
| CN103295628A (en) * | 2013-04-25 | 2013-09-11 | 广州大学 | Double-end active equivalent circuit of charge-control memristor |
| CN103326704A (en) * | 2013-06-24 | 2013-09-25 | 杭州电子科技大学 | Magnetic control memristor equivalent circuit |
| US20140028347A1 (en) * | 2012-07-30 | 2014-01-30 | Warren Robinett | Implementing logic circuits with memristors |
| CN103595392A (en) * | 2013-07-02 | 2014-02-19 | 华南理工大学 | Realization circuit and realization method for charge control type memristor |
| CN204102401U (en) * | 2014-07-25 | 2015-01-14 | 华北电力大学（保定） | A kind of for simulating the experimental provision recalling resistance element |
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120175583A1 (en) * | 2002-03-12 | 2012-07-12 | Knowmtech, Llc. | Memristor apparatus |
| CN102623062A (en) * | 2012-04-09 | 2012-08-01 | 武汉科技大学 | Memristor simulation model |
| US20140028347A1 (en) * | 2012-07-30 | 2014-01-30 | Warren Robinett | Implementing logic circuits with memristors |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| CN103295628A (en) * | 2013-04-25 | 2013-09-11 | 广州大学 | Double-end active equivalent circuit of charge-control memristor |
| CN103294872A (en) * | 2013-06-24 | 2013-09-11 | 杭州电子科技大学 | Memristor equivalent circuit and construction method thereof |
| CN103326704A (en) * | 2013-06-24 | 2013-09-25 | 杭州电子科技大学 | Magnetic control memristor equivalent circuit |
| CN103595392A (en) * | 2013-07-02 | 2014-02-19 | 华南理工大学 | Realization circuit and realization method for charge control type memristor |
| CN204102401U (en) * | 2014-07-25 | 2015-01-14 | 华北电力大学（保定） | A kind of for simulating the experimental provision recalling resistance element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067320A (en) * | 2016-07-07 | 2016-11-02 | 江南大学 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
| US11475272B2 (en) * | 2017-03-24 | 2022-10-18 | Denso Corporation | Neural network circuit |
| CN110797062A (en) * | 2019-09-17 | 2020-02-14 | 华中科技大学 | Memristor read-write circuit and method |
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