CN103258596B - The image method that disappears of conductive film - Google Patents
The image method that disappears of conductive film Download PDFInfo
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- CN103258596B CN103258596B CN201310152173.0A CN201310152173A CN103258596B CN 103258596 B CN103258596 B CN 103258596B CN 201310152173 A CN201310152173 A CN 201310152173A CN 103258596 B CN103258596 B CN 103258596B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0547—Nanofibres or nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/002—Manufacture of articles essentially made from metallic fibres
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
- B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
Abstract
The image method that disappears of a kind of conductive film, described conductive film includes substrate, the electrode district being positioned on substrate and the non-electrode region being positioned on substrate, and described electrode district forms the pattern of described conductive film, and described electrode district includes substrate and nano metal.Formed during described conductive film, described in the image method that disappears comprise the steps: (a). utilize photoresist protecting film to protect described electrode district；(b). after filling liquid is coated non-electrode region, solidify；(c). removing described photoresist protecting film with corrosive liquid, the refractive index making described non-electrode region and described electrode district is same or like, mist degree difference≤3%, transmitance difference≤1%.The invention has the beneficial effects as follows: make non-electrode region and the refractive index of electrode district, mist degree, the difference of transmitance reduce, so that electrode district has similar optical property with non-electrode region, finally make electrode district marginal area be difficult to by human eye and differentiate.
Description
Technical field
The present invention relates to the image method that disappears of a kind of conductive film.
Background technology
At present, transparent conductive film mainly has metal-oxide film, nanometer metallic film, conducting polymer thin film, carbon
Nanotube or graphene film.Wherein indium tin oxide (ITO) thin film is most widely used, but indium resource faces office in short supply
Face, and the technique of the vacuum splashing and plating of ITO conductive film is complex, and technological temperature is the highest.Along with the development of technology, permissible
Using the nanometer metallic film of coating process, such as nanometer silver transparent conductive film becomes the replacement material that ITO conductive film is strong
Material.Nano-silver thread transparent conductive film includes silver wire and polymeric matrix, and silver wire spreads in substrate or embeds, and forms conduction
Network.The silver wire metallic film using coating process is by silver wire and Polymers Miscibility in solvent, then with spin coating or
Other modes of person are coated on base material.
Patterned conductive thin film refers to the transparent conductive film layer on base material is carried out circuit, such as gold-tinted etching, laser incising
Erosion, silk-screen etc., form a series of driving element, have transparent and electric conductivity simultaneously.Patterned transparent conductive film is as driving
Galvanic electricity road is widely used in various device, such as the transparency electrode in display, touch screen and thin film photocell, it is also possible to use
Make antistatic backing and electromagnetic wave shielding.
Patterned conductive thin film is divided into electrode district and non-electrode region, due to electrode district and the non-electrode region of nanometer metallic film
There is optical difference in transmitance, mist degree, refractive index, the edge of electrode district is easily seen by human eye, when this thin film is applied simultaneously
When touch screen and other devices, cause producing fuzzy sense, granular sensation and torsion when screen atomization and display image particularly word
Bent sense.
Therefore, it is necessary to existing technology is improved, make electrode edge region invisible (or being referred to as the shadow that disappears).
Summary of the invention
It is an object of the invention to provide a kind of image method that disappears making the sightless conductive film of electrode district marginal area.
For solving to realize above-mentioned purpose, the present invention adopts the following technical scheme that the image method that disappears of a kind of conductive film, described
Conductive film includes substrate, the electrode district being positioned on substrate and the non-electrode region being positioned on substrate, and described electrode district is formed described
The pattern of conductive film, described electrode district includes substrate and nano metal, is being formed during described conductive film, described in disappear
Image method comprises the steps:
(a). utilize photoresist protecting film to protect described electrode district；
(b). after filling liquid is coated non-electrode region, solidify；Described filling liquid includes solvent, substrate thing and receives
Rice grain；Described solvent is water or ethanol；Described substrate thing is polymethacrylates, polyacrylate and polyacrylonitrile, gathers
Vinyl alcohol, polyester, polrvinyl chloride, hydroxypropyl methyl cellulose or sodium carboxymethyl cellulose；Described nano-particle is burning
Composition granule or metal nanoparticle;The size of described nano-particle is 0.1 μm ~ 100 μm；
(c). remove described photoresist protecting film with corrosive liquid, make described non-electrode region and the refractive index of described electrode district
Same or like, mist degree difference≤3%, transmitance difference≤1%.
As further improved technical scheme of the present invention: the content of described solvent is 95% ~ 99%, containing of described substrate thing
Amount is 0.01% ~ 3%.
As further improved technical scheme of the present invention: the content of described substrate thing is 0.05% ~ 1%.
As further improved technical scheme of the present invention: described metal oxide particle be titanium dioxide, ferrum oxide or
Zinc oxide.
As further improved technical scheme of the present invention: the size of described nano-particle is 1 μm ~ 20 μm.
As further improved technical scheme of the present invention: after step (c), described non-electrode region has with described
The insulating nano metal grill of electrode district substrate of the same race；.
As further improved technical scheme of the present invention: the sheet resistance of described nano metal grid is more than 106Ω/□。
As further improved technical scheme of the present invention: the preparation of described filling liquid is at room temperature carried out, it is 1 by size
μm ~ 10 μm, content are the nano-Ag particles aqueous solution of 10%, take X1*20g and are dissolved in the mixed solution of deionized water, stirring,
Again X1*3g polyvinyl alcohol is added to above-mentioned solution, stirring；Described X1 be proportionality coefficient and numerical value identical.
As further improved technical scheme of the present invention: the preparation of described filling liquid is at room temperature carried out, it is 1 by size
μm ~ 10 μm, content are the nano-Ag particles aqueous solution of 10%, take X2*20g and are dissolved in the mixed solution of deionized water, stirring,
Again X2*0.1g hydroxypropyl methyl cellulose (HPMC) is added to above-mentioned solution, stirring；Described X2 is proportionality coefficient and numerical value
Identical.
As further improved technical scheme of the present invention: in step (b), after filling liquid is coated non-electrode region,
At a temperature of 100 DEG C, baking solidifies for 10 minutes；In step (c), described corrosive liquid is the solution of the sodium hydroxide of 5%, is going
After described photoresist protecting film, toast 10 minutes at a temperature of 100 DEG C.
Compared with prior art, the present invention can make non-electrode region and the refractive index of electrode district, mist degree, the difference of transmitance
Reduce, so that electrode district has similar optical property with non-electrode region, finally make electrode district marginal area be difficult to by human eye
Differentiate.
Accompanying drawing explanation
Fig. 1 is the image method schematic flow sheet in the first embodiment that disappears of conductive film of the present invention.
Fig. 2 is the patterning pattern that non-electrode region is not filled by nano metal line.
Fig. 3 is the patterning pattern that non-electrode region fills nano metal line.
Fig. 4 is that non-electrode region is not filled by patterning pattern.
Fig. 5 is the patterning pattern after non-electrode region filling substrate.
The image method schematic flow sheet in the second embodiment that disappears of Fig. 6 conductive film of the present invention.
Fig. 7 is that non-electrode region nano metal is completely etched away patterning pattern.
Fig. 8 is the patterning pattern that non-electrode region nano metal is the most oxidized.
Detailed description of the invention
Conductive film includes substrate, the electrode district being positioned on substrate and the non-electrode region being positioned on substrate, described electrode district
Forming the pattern of described conductive film, described electrode district and non-electrode region all include substrate and nano metal.
Empirical tests: the density of the grid of nano metal is the least, line length line footpath is the least, the conductive capability of nanometer metallic film is more
Weak；The surface oxidation degree of the grid of nano metal is the highest, and conductive capability is the most weak.The present invention be based on above two checking and
It is divided into two kinds of embodiments.
Generally, the first embodiment is the insulating nano by having substrate of the same race in non-electrode region coating and electrode district
Metal grill, or by there is same or like refractive index and mist degree in non-electrode region coating and the substrate of electrode district
Thin polymer film, makes non-electrode region and the refractive index of electrode district, mist degree, the difference of transmitance reduce, so that electrode district and non-
Electrode district has similar optical property, finally makes electrode district marginal area be difficult to by human eye and differentiates.
Second embodiment is by conductive film patterning stages, not by complete to nano metal and the substrate of non-electrode region
Entirely etching away, by improving etching solution formula, part nano metal oxide efflorescence is rinsed out and portion by etching period, etch temperature
Point oxidized insulation, and major part substrate continues to be attached on substrate, then hot setting, so that electrode district and non-electrode
District has similar optical property, finally makes electrode district marginal area be difficult to by human eye and differentiates.
Hereinafter both embodiments are described in detail.
Please join shown in Fig. 1, the present invention discloses the image method that disappears of a kind of conductive film in the first embodiment, is being formed
During described conductive film, described in the image method that disappears comprise the steps:
(a). utilize photoresist protecting film to protect described electrode district；
(b). after filling liquid is coated non-electrode region, solidify；
(c). remove described photoresist protecting film with corrosive liquid, make described non-electrode region and the refractive index of described electrode district
Same or like, mist degree difference≤3%, transmitance difference≤1%.
Step (c) has the effect that protection photoresist is removed.
Described filling liquid includes two kinds of formula, and in the first formula, described filling liquid includes solvent, substrate thing and nanometer
Granule；Described solvent includes but not limited to water or ethanol etc.；Described substrate thing include but not limited to polymethacrylates, poly-third
Olefin(e) acid ester and polyacrylonitrile, polyvinyl alcohol, polyester, polrvinyl chloride, hydroxypropyl methyl cellulose or sodium carboxymethyl cellulose etc.；
Described nano-particle includes but not limited to metal oxide particle or metal nanoparticle.
Preferably, in the first formula, the content of described solvent is 95% ~ 99%, and the content of described substrate thing is 0.01%
~3%.Preferably, the content of described substrate thing is 0.05% ~ 1%.Described metal oxide particle be titanium dioxide, ferrum oxide or
Zinc oxide.Nano metal includes but not limited to gold, silver, copper etc..The size of described nano-particle is 0.1 μm ~ 100 μm, preferably
Ground, the size of described nano-particle is 1 μm ~ 20 μm.
Fig. 2 and Fig. 3 is the comparison diagram before and after using the filling liquid of the first formula to process non-electrode region.Through step
Suddenly after (c), intersperse among the nano metal grid of substrate at non-electrode area filling, and described non-electrode region has with described
The insulating nano metal grill of electrode district substrate of the same race.Preferably, the sheet resistance of described nano metal grid is more than 106Ω/, electricity
Road does not has the phenomenon of short circuit.
In the second formula, described filling liquid includes solvent, substrate thing and surfactant；Described solvent include but not
It is limited to water or ethanol etc.；Described substrate thing includes but not limited to polymethacrylates, polyacrylate and polyacrylonitrile, poly-second
Enol, polyester, polrvinyl chloride, hydroxypropyl methyl cellulose or sodium carboxymethyl cellulose etc..
In the second formula, the content of described solvent is 98% ~ 99.9%, and the content of described substrate thing is 0.1% ~ 2%, institute
The content stating surfactant is 1ppm ~ 20ppm.Preferably, the content of described substrate thing is 0.1% ~ 1%.
Fig. 4 and Fig. 5 is the comparison diagram before and after using the filling liquid of the second formula to process non-electrode region.Through step
Suddenly, after (c), described non-electrode region has same or like refractive index and the polymer thin of mist degree with the substrate of described electrode district
Film.
The examples of configurations being below filled with liquid illustrates:
Under the first situation, the preparation of described filling liquid is at room temperature carried out, and is that 1 μm ~ 10 μm, content are by size
The nano-Ag particles aqueous solution of 10%, takes X1*20g and is dissolved in the mixed solution of deionized water, stirring, then by X1*3g polyvinyl alcohol
Add to above-mentioned solution, stirring；Described X1 be proportionality coefficient and numerical value identical.
Under second case, the preparation of described filling liquid is at room temperature carried out, and is that 1 μm ~ 10 μm, content are by size
The nano-Ag particles aqueous solution of 10%, takes X2*20g and is dissolved in the mixed solution of deionized water, stirring, then by X2*0.1g hydroxypropyl
Methylcellulose (HPMC) adds to above-mentioned solution, stirring；Described X2 be proportionality coefficient and numerical value identical.
Under the third situation, described filling liquid is simple hydroxypropyl methyl cellulose (HPMC) solution or polyester
(Vylon) solution.
In step (b), after filling liquid is coated non-electrode region, toast at a temperature of 100 DEG C and solidify for 10 minutes；
In step (c), described corrosive liquid is the solution of the sodium hydroxide of 5%, after removing described photoresist protecting film, at 100 DEG C
At a temperature of toast 10 minutes.
The image method that disappears of present invention conductive film in the first embodiment, the wherein host material in filling liquid and electricity
Host material in polar region is same or like, has same or like refractive index, and the nano metal in filling liquid can make
Light dissipates, and reduces the difference with electrode district, so that electrode district has similar optical property with non-electrode region, finally makes electrode
Area edge region is difficult to be differentiated by human eye.
Please join shown in Fig. 6, the present invention discloses the image method that disappears of a kind of conductive film in the second embodiment, is being formed
During described conductive film, described in the image method that disappears comprise the steps:
(a). utilize photoresist protecting film to protect described electrode district；
(b). utilize etching liquid to make the nano metal oxide of described non-electrode region, and not exclusively etch away described non-electrode
The nano metal in district and substrate, the refractive index making described non-electrode region and described electrode district is same or like, mist degree difference≤3%,
Transmitance difference≤1%.
Preferably, described etching liquid include but not limited to nitric acid, potassium permanganate, iron chloride, hydrogen peroxide solution or these
The mixed solution of material, the content of oxidation component is 1% ~ 60%, and etching period is between 1 ~ 10 minute.
In step (b), described conductive film is dipped into a period of time in described etching liquid；When receiving of described non-electrode region
After rice metal is oxidized, described conductive film is heated, solidifies, makes the mesh isolation of the nano metal of non-electrode region
Change.
Examples of configurations with regard to etching liquid illustrates below:
Under the first situation, the preparation of described etching liquid is at room temperature carried out, and takes Y1*50g potassium permanganate and is dissolved in Y1*445g
In deionized water, then the salpeter solution taking Y1*5g 20% adds in the above solution prepared；In step (b), by described conduction
Thin film immerses 5 ~ 500s in described etching liquid, makes described non-electrode region be lost electric conductivity by insulating, places into the baking of 100 DEG C of baking oven
Roasting 10 minutes；Described Y1 be proportionality coefficient and numerical value identical.
Under second case, the preparation of described etching liquid is at room temperature carried out, and takes Y2*50g iron chloride and is dissolved in Y2*450g
In ionized water；In step (b), described conductive film is immersed 5 ~ 1000s in described etching liquid, makes described non-electrode region by absolutely
Edge loses electric conductivity, places into 100 DEG C of baking oven and toasts 10 minutes；Described Y2 be proportionality coefficient and numerical value identical.
Under the third situation, the preparation of described etching liquid is at room temperature carried out, and takes Y3*250g iron chloride and is dissolved in Y3*250g
In deionized water；In step (b), described conductive film is immersed 5 ~ 500s in described etching liquid, makes described non-electrode region quilt
Insulating loses electric conductivity, places into 100 DEG C of baking oven and toasts 10 minutes；Described Y3 be proportionality coefficient and numerical value identical.
Under 4th kind of situation, the preparation of described etching liquid is at room temperature carried out, and takes Y4*125g iron chloride and is dissolved in Y4*325g
In deionized water；In step (b), described conductive film is immersed 10 ~ 600s in described etching liquid, makes described non-electrode region quilt
Insulating loses electric conductivity, places into 100 DEG C of baking oven and toasts 10 minutes；Described Y4 be proportionality coefficient and numerical value identical.
Fig. 7 and Fig. 8 is that non-electrode region nano metal is completely etched away and the most oxidized comparison diagram.Preferably, in step
Suddenly, after (b), the sheet resistance of the grid of the nano metal of described non-electrode region is more than 106Ω/, circuit does not has the phenomenon of short circuit.
The image method that disappears of present invention conductive film in the second embodiment, wherein, after step (b), etching
Liquid makes the nano metal oxide of non-electrode region, and not exclusively etches away nano metal and substrate, so that electrode district and non-electrode
District has similar optical property, finally makes electrode district marginal area be difficult to by human eye and differentiates.
It should be understood that above example is merely to illustrate the present invention and and unrestricted technical side described in the invention
Case, although this specification with reference to the above embodiments to present invention has been detailed description, but, the common skill of this area
Art personnel should be appreciated that the present invention still can be modified or equivalent by person of ordinary skill in the field, and
All, without departing from the technical scheme of the spirit and scope of the present invention and improvement thereof, all should be contained in scope of the presently claimed invention
In.
Claims (10)
1. the image method that disappears of conductive film, described conductive film includes substrate, the electrode district being positioned on substrate and is positioned at base
Non-electrode region on plate, described electrode district forms the pattern of described conductive film, and described electrode district includes substrate and nano metal,
It is characterized in that, formed during described conductive film, described in the image method that disappears comprise the steps:
(a). utilize photoresist protecting film to protect described electrode district；
(b). after filling liquid is coated non-electrode region, solidify；Described filling liquid includes solvent, substrate thing and nanometer
Grain；Described solvent is water or ethanol；Described substrate thing is polymethacrylates, polyacrylate and polyacrylonitrile, polyethylene
Alcohol, polyester, polrvinyl chloride, hydroxypropyl methyl cellulose or sodium carboxymethyl cellulose；Described nano-particle is metal-oxide
Grain or metal nanoparticle；The size of described nano-particle is 0.1 μm ~ 100 μm；
(c). remove described photoresist protecting film with corrosive liquid, make described non-electrode region identical with the refractive index of described electrode district
Or close, mist degree difference≤3%, transmitance difference≤1%.
2. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: the content of described solvent is 95% ~ 99%,
The content of described substrate thing is 0.01% ~ 3%.
3. the image method that disappears of conductive film as claimed in claim 2, it is characterised in that: the content of described substrate thing is 0.05% ~
1%。
4. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: described metal oxide particle is dioxy
Change titanium, ferrum oxide or zinc oxide.
5. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: the size of described nano-particle is 1 μm
~20μm。
6. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: after step (c), described non-electrical
Polar region has the insulating nano metal grill of substrate of the same race with described electrode district.
7. the image method that disappears of conductive film as claimed in claim 6, it is characterised in that: the sheet resistance of described nano metal grid is big
In 106Ω/□。
8. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: described filling liquid be formulated in room temperature
Under carry out, by size be 1 μm ~ 10 μm, content be the nano-Ag particles aqueous solution of 10%, take X1*20g and be dissolved in deionized water
In mixed solution, stirring, then X1*3g polyvinyl alcohol is added to above-mentioned solution, stirring；Described X1 is proportionality coefficient and numerical value
Identical.
9. the image method that disappears of conductive film as claimed in claim 1, it is characterised in that: described filling liquid be formulated in room temperature
Under carry out, by size be 1 μm ~ 10 μm, content be the nano-Ag particles aqueous solution of 10%, take X2*20g and be dissolved in deionized water
In mixed solution, stirring, then X2*0.1g hydroxypropyl methyl cellulose (HPMC) is added to above-mentioned solution, stirring；Described X2
Identical for proportionality coefficient and numerical value.
10. the image method that disappears of the conductive film as described in any one in claim 1 to 9, it is characterised in that: step (b)
In, after filling liquid is coated non-electrode region, toast at a temperature of 100 DEG C and solidify for 10 minutes；In step (c), described
Corrosive liquid is the solution of the sodium hydroxide of 5%, after removing described photoresist protecting film, toasts 10 points at a temperature of 100 DEG C
Clock.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310152173.0A CN103258596B (en) | 2013-04-27 | 2013-04-27 | The image method that disappears of conductive film |
| PCT/CN2014/071148 WO2014161381A1 (en) | 2013-04-05 | 2014-01-22 | Transparent conductive electrodes comprising merged metal nanowires, their structure design,and method of making such structures |
| PCT/CN2014/071145 WO2014161380A1 (en) | 2013-04-05 | 2014-01-22 | Transparent conductive electrodes comprising merged metal nanowires, their structure design, and method of making such structures |
| PCT/CN2014/071155 WO2014161382A1 (en) | 2013-04-05 | 2014-01-22 | Transparent conductive electrodes comprising merged metal nanowires, their structure design,and methodof making such structures |
| US14/360,886 US20150010695A1 (en) | 2012-06-01 | 2014-01-22 | Transparent conductive electrodes comprising merged metal nanowires, their structure design, and method of making such structures |
| US14/360,891 US9368248B2 (en) | 2013-04-05 | 2014-01-22 | Transparent conductive electrodes comprising metal nanowires, their structure design, and method of making such structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310152173.0A CN103258596B (en) | 2013-04-27 | 2013-04-27 | The image method that disappears of conductive film |
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| CN103258596A CN103258596A (en) | 2013-08-21 |
| CN103258596B true CN103258596B (en) | 2016-12-28 |
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| CN201310152173.0A Active CN103258596B (en) | 2012-06-01 | 2013-04-27 | The image method that disappears of conductive film |
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| WO (3) | WO2014161381A1 (en) |
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| CN103258596B (en) * | 2013-04-27 | 2016-12-28 | 苏州诺菲纳米科技有限公司 | The image method that disappears of conductive film |
| US9368248B2 (en) | 2013-04-05 | 2016-06-14 | Nuovo Film, Inc. | Transparent conductive electrodes comprising metal nanowires, their structure design, and method of making such structures |
| WO2015054775A1 (en) * | 2013-10-17 | 2015-04-23 | Transfert Plus, S.E.C. | Electrodes, detectors, uses thereof and methods for fabrication thereof |
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| KR102360031B1 (en) * | 2014-11-12 | 2022-02-09 | 삼성전자주식회사 | nanostructure, preparing method thereof, and panel unit comprising the same |
| US10438715B2 (en) * | 2014-11-12 | 2019-10-08 | Samsung Electronics Co., Ltd. | Nanostructure, method of preparing the same, and panel units comprising the nanostructure |
| CN107251160A (en) * | 2014-12-16 | 2017-10-13 | 索尔维公司 | Transparent conductor comprising metal nanometer line and forming method thereof |
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| CN103258596A (en) | 2013-08-21 |
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Application publication date: 20130821 Assignee: Caim Holdings Limited Assignor: Suzhou Nuovo Film Inc. Contract record no.: 2018990000274 Denomination of invention: Shadow removing method of conductive thin film Granted publication date: 20161228 License type: Exclusive License Record date: 20181018 |