CN103219945B - A kind of injection locking varactor doubler with odd harmonic suppression mechanism - Google Patents
A kind of injection locking varactor doubler with odd harmonic suppression mechanism Download PDFInfo
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Abstract
The invention provides a kind of injection locking varactor doubler with odd harmonic suppression mechanism, comprise and inject buffer stage (1), voltage controlled oscillator biasing circuit (2) and voltage controlled oscillator (3), inject the drain electrode output of buffer stage (1) and the drain electrode output-parallel of voltage controlled oscillator bias stage (2), and be connected with the source electrode of voltage controlled oscillator cross-coupled pair.Inject the second harmonic that buffer can produce input signal, and suppress odd harmonic while the even-order harmonic exported is superposed; Voltage controlled oscillator biasing circuit provides bias current separately, make inject buffer can be biased in be beneficial to most produce second harmonic voltage on; Voltage controlled oscillator amplifies the second harmonic injecting buffer and produce under injection locking state, provides the output signal of amplitude stabilization.All odd harmonics are offset while can realizing second harmonic superposition by the present invention, make harmonic conversion and biased two functions be unlikely to influence each other and realize exporting with low-power consumption the signal of long arc at high frequency.
Description
Technical field
The invention belongs to simulation/technical field of radio frequency integrated circuits, be specifically related to a kind of injection locking varactor doubler with odd harmonic suppression mechanism.
Background technology
Along with the development of information technology, the data transfer rate of communication system constantly promotes, and various high data rate communication application such as WirelessHD TV, Wireless USB emerge in an endless stream.For meeting the frequency spectrum resource required for high-speed communication, the carrier frequency of new wireless communication standard constantly promotes, and as abuliding 802.11adWLAN standard, its carrier frequency is at about 60GHz.In order to realize reliably high-speed data communication, high-data-rate wireless communication system is had higher requirement to frequency source, and specifically, require that frequency source has lower phase noise, higher power output exactly, the power simultaneously consumed is lower.Because the maximum available gain of active device declines along with the increase of frequency, thus in higher frequency, its maximum available gain is lower, cause the output phase noise specifications of fundamental frequency voltage controlled oscillator within the scope of higher frequency band poor, affect the performance of whole wireless communication system.
For solving this difficult problem in high-frequency wireless communication system frequency source, frequency multiplier can be used to realize frequency source.Compared to the fundamental frequency voltage controlled oscillator working in same frequency, the advantage of frequency multiplier is, the phase noise of its output signal is determined by the phase noise of input signal.Because low frequency signal source more easily accomplishes low output phase noise, therefore frequency multiplier can less cost realize low phase noise frequency signal export.
The structure comparison of frequency multiplier is various, and the injection locked frequency multiplier wherein based on injection locking principle has the advantage that amplitude output signal is stablized, power efficiency is low.Because the lock-in range of injection locked frequency multiplier is determined by the humorous intensity of wave being injected into resonant cavity, and the intensity of harmonic signal reduces along with the increase of harmonic order.Thus compared to the injection locked frequency multiplier of other exponent numbers, injection locking varactor doubler has larger injection locking scope, between injection locking scope and phase of output signal noise, achieve good compromise.
But common injection locking varactor doubler exists the problem of harmonics restraint, namely not only there is the second harmonic component of desired Injection Signal in output signal, also there is fundamental frequency and the third-harmonic component of Injection Signal simultaneously.Because these harmonic wave distance second harmonic component are comparatively near, thus in a communications system can the normal work of interfere with communications system by various Nonlinear Mechanism.In order to obtain the output spectrum of better injection locking varactor doubler, need to suppress these harmonic waves.But the existing patent about injection locking varactor doubler, if Chinese Patent Application No. is the application of 2010800299403, the mechanism of fundamental frequency and triple-frequency harmonics is not suppressed in its circuit, do not have the ability suppressing these harmonic components, thus present patent application has filled up domestic blank in this.
Summary of the invention
The present invention is the harmonics restraint problem solving existing injection locking varactor doubler, and then provides a kind of injection locking varactor doubler with odd harmonic suppression mechanism.
For this reason, the invention provides following technical scheme: a kind of injection locking varactor doubler with odd harmonic suppression mechanism, comprise and inject buffer stage, voltage controlled oscillator biasing circuit and voltage controlled oscillator, inject the drain electrode output of buffer stage and the drain electrode output-parallel of voltage controlled oscillator bias stage, and be connected with the source electrode of voltage controlled oscillator cross-coupled pair; Wherein:
Inject buffer stage and adopt common source difference channel, difference channel is by two nmos pass transistor NM1, NM2 is formed, the drain electrode of two transistors is directly connected, the ac input signal injecting buffer stage is difference Injection Signal INJ+ and INJ-, DC offset voltage is VCONV, DC offset voltage VCONV affects the waveform of output current signal by the service area of control NM1 and NM2 and the angle of flow, affect Injection Signal INJ+ and INJ-harmonic generation efficiency, the resistance of resistance R1 and R2 is larger, for exchanging choking resistance, effect stops the leakage of injecting AC signal, by the drain terminal injecting buffer stage is linked together, two nmos pass transistor NM1 and NM2 output current are superposed, realize even-order harmonic in-phase stacking in output signal to strengthen, realize inversely adding counteracting to odd harmonic simultaneously,
Voltage controlled oscillator biasing circuit adopts differential pair NM3 and NM4, its effect is for cross-coupled pair NM5 and NM6 of voltage controlled oscillator provides direct current biasing, with the loss in compensating inductance capacitor resonance chamber since producing enough negative resistances, because the direct current biasing of cross-coupled pair is provided separately by NM3 and NM4, the bias voltage VCONV thus injecting buffer stage can arrange separately to ensure higher harmonic generation efficiency;
Voltage controlled oscillator is by nmos pass transistor NM5 and NM6, inductance L 1, varactor VAR1 and VAR2 and resistance R5 and R6 forms, NM5 and NM6 forms cross-coupled pair, there is provided negative resistance with the loss in compensating inductance capacitor resonance chamber, resonant cavity is by inductance L 1, varactor VAR1 and VAR2, the parasitic capacitance composition of resistance R5 and R6 and nmos pass transistor, time frequency-splitting between the free oscillation frequency and the second harmonic of input signal of voltage controlled oscillator is less than lock-in range, the output of voltage controlled oscillator will lock onto on the second harmonic of input signal, its phase noise will be determined by input signal, by regulating the control voltage VTUNE of varactor VAR1 and VAR2, change the free oscillation frequency of voltage controlled oscillator, expand the operating frequency range of injection locking varactor doubler.
Described injection buffer stage carries out shaping to difference Injection Signal, produce harmonic wave, by the independent adjustment to bias voltage VCONV, select the optimal voltage value with maximum harmonic generation efficiency, by being linked together by the drain terminal of two nmos pass transistors, realize the enhancing of even-order harmonic and the counteracting of odd harmonic.
The bias current that described voltage controlled oscillator biasing circuit provides separately voltage controlled oscillator cross-coupled pair required when vibrating, thus make the bias voltage injecting buffer stage can select optimal value to have maximum harmonic generation efficiency, and be unlikely to the normal work affecting voltage controlled oscillator.
The output signal of described voltage controlled oscillator under injection locking state is determined by the second harmonic injecting buffer stage generation, the phase noise exported is determined by input signal, the change of voltage controlled oscillator free oscillation frequency can be realized by regulation voltage VTUNE, expand the operating frequency range of injection locking varactor doubler.
The present invention's advantage is compared with prior art:
1, injection buffer stage of the present invention carries out harmonic conversion to Injection Signal, so that the harmonic component required for producing; The drain electrode of injecting two nmos pass transistors NM1, NM2 of the differential pair of buffer stage due to composition is shorted together, and all odd harmonics is offset while thus can realizing second harmonic superposition.
2, voltage controlled oscillator biasing circuit of the present invention provides separately the bias current of voltage controlled oscillator, the bias voltage of injection buffer stage can be set to have in the optimal voltage value of maximum secondary harmonic generation efficiency, make harmonic conversion and biased two functions be unlikely to influence each other.
3, voltage controlled oscillator of the present invention amplifies the second harmonic being injected into the input signal of resonant cavity as amplifying device, in case of locking, the amplitude of output signal is determined by the output amplitude under voltage controlled oscillator free-running operation, phase noise is determined by input signal, thus can realize at high frequency the signal exporting long arc with low-power consumption.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is traditional varactor doubler structural representation;
Fig. 2 is the electrical block diagram of the injection locking varactor doubler with odd harmonic suppression mechanism that the specific embodiment of the present invention provides and the specific works principle of odd harmonic suppression mechanism;
Fig. 3 is the corresponding relation curve between the angle of flow and each harmonic conversion efficiency;
Fig. 4 is the circuit structure of other embodiments 1;
Fig. 5 is the circuit structure of other embodiments 2;
Fig. 6 is the output spectrum of traditional injection locking varactor doubler;
Fig. 7 be the output voltage Frequency spectrum ratio of the injection locking varactor doubler with odd harmonic suppression mechanism that the specific embodiment of the present invention provides comparatively.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The specific embodiment of the present invention provides a kind of injection locking varactor doubler with odd harmonic suppression mechanism, as shown in Figure 2, comprise and inject buffer stage 1, voltage controlled oscillator biasing circuit 2 and voltage controlled oscillator 3, inject the drain electrode output of buffer stage 1 and the drain electrode output-parallel of voltage controlled oscillator bias stage 2, and be connected with the source electrode of voltage controlled oscillator cross-coupled pair.
Concrete, the two paths of differential signals of input enters the grid end of differential pair NM1 and NM2 injecting buffer stage 1 respectively.Meanwhile, the grid terminal voltage of NM1 and NM2 is biased VCONV and is arranged on to have maximum secondary harmonic generation efficiency on optimal voltage, and thus the waveform of the output current of drain terminal will not be complete sine wave, and second harmonic component abundant in its frequency spectrum; Ac coupling capacitor C1 and C2 is used to provide differential pair bias and AC signal; The resistance of resistance R1 and R2 is comparatively large, and it act as and prevents the AC signal inputted to be coupled to AC deposition by direct current biasing; Together with the drain terminal of NM1 with NM2 terminates at, the drain terminal output current of two transistor is superposed, its operation principle is as shown in Figure 2: the phase difference of the two paths of signals of Differential Input is 180 °, after differential pair through injecting buffer stage carries out rectification, in its circuit signal exported, there is abundant harmonic component, for odd harmonic (comprising fundamental frequency signal) wherein, the phase difference of two paths of signals is (2k+1) * 180 °, namely 180 °, and for even-order harmonic component wherein, its phase difference is 2k*180 °, namely 0 °.It can thus be appreciated that the odd harmonic component in two paths of signals is anti-phase, even-order harmonic component homophase, during superposition, odd harmonic is cancelled out each other, and even-order harmonic intensity becomes two times of single channel, so achieve the suppression of odd harmonic.And above-mentioned derivation is all set up to the Injection Signal of optional frequency, and therefore this odd harmonic suppression mechanism is blanket.
Voltage controlled oscillator biasing circuit 2 is by nmos pass transistor NM3 and NM4, and resistance R3 and R4 is formed, and wherein the bias voltage of transistor is provided by VBIAS.NM3 and NM4 being biased as voltage controlled oscillator, for cross-couplings pipe NM5 and NM6 provides enough DC bias currents, enables NM5 and NM6 provide enough negative resistances to carry out the loss of compensation resonant cavity.The effect of resistance R3 and R4 is the path over the ground AC signal being provided to a high impedance, and the parasitic capacitance of second harmonic component on NM3 and NM4 that minimizing injection buffer stage NM1 and NM2 exports at drain terminal is leaked to ground.The operation principle of voltage controlled oscillator biasing circuit 2 is as follows: (select from S.Cripps by Fig. 3, RFPowerAmplifierforWirelessCommunications, 2e, ArtechHouse, 2006) known, when the angle of flow of transistor is about 108 °, export and there is maximum second harmonic component, now transistor is between category-B and C class, there is no direct current, can not use as bias current sources, namely provide biased and carry out being exist to accept or reject between these two functions of harmonic conversion.When voltage controlled oscillator is provided one special biased time, just respectively the grid terminal voltage injecting buffer stage 1 and voltage controlled oscillator biasing circuit 2 can be set to optimal value, ensureing to provide maximum second harmonic component to be injected into resonant cavity while voltage controlled oscillator can vibrate, notice simultaneously, NM1 and NM2 be biased in there is maximum secondary harmonic generation efficiency voltage on time, its direct current is zero, does not thus consume direct current power.
The structure of voltage controlled oscillator 3 is inductance capacitance cross coupling structure, and resonant cavity is made up of the parasitic capacitance of inductance L 1, varactor VAR1 and VAR2, resistance R5 and R6 and cross-coupled pair NM5 and NM6.Frequency of oscillation is by the electric capacity on L1, VAR1 and VAR2, and parasitic capacitance determines jointly.Frequency of oscillation is changed by the electric capacity regulating the voltage of VTUNE to control varactor VAR1 and VAR2, expand the working range of injection locking frequency multiplication with this, the effect of resistance R3 and R6 prevents AC signal from leaking into the control end of VTUNE signal by varactor VAR1 and VAR2.
Other embodiments 1:
The output of injecting buffer stage 1 can also be connected on the drain terminal of voltage controlled oscillator cross-coupled pair, and the second harmonic signal of generation is directly injected in resonant cavity, instead of is re-introduced into resonant cavity by cross-coupled pair.
Other embodiments 2:
Two nmos pass transistors of voltage controlled oscillator biasing circuit 2 can replace with a transistor, as long as its bias current provided meets the starting of oscillation requirement of cross-couplings pipe in voltage controlled oscillator, its practical function is in circuit identical.
Adopt the technical scheme that this embodiment provides, following technique effect can be realized:
1, injection buffer stage of the present invention 1 pair of Injection Signal carries out harmonic conversion, so that the harmonic component required for producing; The drain electrode of injecting two nmos pass transistors NM1, NM2 of the differential pair of buffer stage 1 due to composition is shorted together, and all odd harmonics is offset while thus can realizing second harmonic superposition.
2, voltage controlled oscillator biasing circuit 2 of the present invention provides separately the bias current of voltage controlled oscillator 3, the bias voltage of injection buffer stage 1 can be set on the highest optimal voltage of conversion efficiency of second harmonic, make harmonic conversion and biased two functions be unlikely to influence each other.
3, voltage controlled oscillator 3 of the present invention amplifies the second harmonic being injected into the input signal of resonant cavity as amplifying device, in case of locking, the amplitude of output signal is determined by the output amplitude under voltage controlled oscillator free-running operation, phase noise is determined by input signal, thus can realize the signal exporting long arc with low-power consumption in higher frequency.
The above; be only the present invention's preferably several embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (4)
1. the injection locking varactor doubler with odd harmonic suppression mechanism, it is characterized in that, comprise and inject buffer stage (1), voltage controlled oscillator biasing circuit (2) and voltage controlled oscillator (3), inject the drain electrode output of buffer stage (1) and the drain electrode output-parallel of voltage controlled oscillator bias stage (2), and be connected with the source electrode of voltage controlled oscillator cross-coupled pair; Wherein:
Inject buffer stage (1) and adopt common source difference channel, difference channel is by two nmos pass transistor NM1, NM2 is formed, the drain electrode of two transistors is directly connected, the ac input signal injecting buffer stage is difference Injection Signal INJ+ and INJ-, DC offset voltage is VCONV, DC offset voltage VCONV affects the waveform of output current signal by the service area of control NM1 and NM2 and the angle of flow, affect Injection Signal INJ+ and INJ-harmonic generation efficiency, the resistance of resistance R1 and R2 is larger, for exchanging choking resistance, effect stops the leakage of injecting AC signal, by the drain terminal injecting buffer stage is linked together, two nmos pass transistor NM1 and NM2 output current are superposed, realize even-order harmonic in-phase stacking in output signal to strengthen, realize inversely adding counteracting to odd harmonic simultaneously,
Voltage controlled oscillator biasing circuit (2) adopts differential pair nmos pass transistor NM3 and nmos pass transistor NM4, its effect is for the cross-couplings pair nmos transistor NM5 of voltage controlled oscillator and nmos pass transistor NM6 provides direct current biasing, with the loss in compensating inductance capacitor resonance chamber since producing negative resistance, because the direct current biasing of cross-coupled pair is provided separately by nmos pass transistor NM3 and nmos pass transistor NM4, the bias voltage VCONV thus injecting buffer stage can arrange separately to ensure higher harmonic generation efficiency;
Voltage controlled oscillator (3) is by nmos pass transistor NM5 and NM6, inductance L 1, varactor VAR1 and VAR2 and resistance R5 and R6 forms, NM5 and NM6 forms cross-coupled pair, there is provided negative resistance with the loss in compensating inductance capacitor resonance chamber, resonant cavity is by inductance L 1, varactor VAR1 and VAR2, the parasitic capacitance composition of resistance R5 and R6 and nmos pass transistor NM5 and NM6, time frequency-splitting between the free oscillation frequency and the second harmonic of input signal of voltage controlled oscillator is less than lock-in range, the output of voltage controlled oscillator will lock onto on the second harmonic of input signal, its phase noise will be determined by input signal, by regulating the control voltage VTUNE of varactor VAR1 and VAR2, change the free oscillation frequency of voltage controlled oscillator, expand the operating frequency range of injection locking varactor doubler.
2. a kind of injection locking varactor doubler with odd harmonic suppression mechanism according to claim 1, it is characterized in that, inject buffer stage (1) and shaping is carried out to difference Injection Signal, produce harmonic wave, by the independent adjustment to bias voltage VCONV, selecting the optimal voltage value with maximum harmonic generation efficiency, by being linked together by the drain terminal of two nmos pass transistor NM1 and NM2, realizing the enhancing of even-order harmonic and the counteracting of odd harmonic.
3. a kind of injection locking varactor doubler with odd harmonic suppression mechanism according to claim 1, it is characterized in that, the bias current that voltage controlled oscillator biasing circuit (2) provides separately voltage controlled oscillator cross-coupled pair required when vibrating, thus make the bias voltage injecting buffer stage can select optimal value to have maximum harmonic generation efficiency, and be unlikely to the normal work affecting voltage controlled oscillator.
4. a kind of injection locking varactor doubler with odd harmonic suppression mechanism according to claim 1, it is characterized in that, the output signal of voltage controlled oscillator (3) under injection locking state determines by injecting the second harmonic that buffer stage (1) produces, the phase noise exported is determined by input signal, the change of voltage controlled oscillator free oscillation frequency can be realized by regulation voltage VTUNE, expand the operating frequency range of injection locking varactor doubler.
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| US9966937B2 (en) * | 2011-04-29 | 2018-05-08 | Marvell World Trade Ltd. | Frequency multipliers |
| CN104333329B (en) * | 2014-09-26 | 2017-05-10 | 复旦大学 | Injection enhanced low-power wide-locking-scope injection locking tripler |
| CN105830342B (en) * | 2016-02-29 | 2018-10-16 | 香港应用科技研究院有限公司 | The harmonic suppression circuit of switch-mode power amplifier |
| CN109617530A (en) * | 2018-11-26 | 2019-04-12 | 上海奥令科电子科技有限公司 | A kind of push-push note locking-type frequency multiplier circuit |
| CN109818578B (en) * | 2019-01-25 | 2021-05-14 | 电子科技大学 | Second harmonic cross injection quadrature voltage-controlled oscillator circuit based on band-pass filter |
| CN109818579A (en) * | 2019-01-30 | 2019-05-28 | 中国科学院上海微***与信息技术研究所 | It is a kind of to be mixed the efficient ultra-wideband frequency multiplier for placing big harmonic wave |
| CN110113004A (en) * | 2019-05-31 | 2019-08-09 | 华讯方舟科技有限公司 | Injection locking oscillating circuit and injection locked oscillator based on annular coupler |
| CN110113007A (en) * | 2019-05-31 | 2019-08-09 | 华讯方舟科技有限公司 | A kind of injection locking oscillating circuit, frequency adjustment method and injection locked oscillator |
| CN114244353B (en) * | 2021-12-21 | 2024-06-04 | 北京理工大学 | Quick start crystal oscillator based on secondary injection and phase-locked loop technology |
| CN117081504B (en) * | 2023-09-01 | 2024-04-05 | 香港中文大学（深圳） | Harmonic oscillator for realizing harmonic tuning based on harmonic current selection |
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| US9374100B2 (en) * | 2009-07-01 | 2016-06-21 | Qualcomm Incorporated | Low power LO distribution using a frequency-multiplying subharmonically injection-locked oscillator |
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