CN207269218U - A kind of high-frequency wideband voltage controlled oscillator - Google Patents
A kind of high-frequency wideband voltage controlled oscillator Download PDFInfo
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- CN207269218U CN207269218U CN201721426181.XU CN201721426181U CN207269218U CN 207269218 U CN207269218 U CN 207269218U CN 201721426181 U CN201721426181 U CN 201721426181U CN 207269218 U CN207269218 U CN 207269218U
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Abstract
A kind of high-frequency wideband voltage controlled oscillator is the utility model is related to, including：Input buffer cell, resonant element, output buffer cell, negative resistance unit and tail current source unit, operation method are：Input buffer cell access control voltage, resonant element is transmitted to by voltage signal；Resonant element produces oscillator signal according to voltage signal, and send to output buffer cell；Buffer cell is exported to oscillator signal into row buffering, and outputting oscillation signal；The loss for the energy compensating resonant element that negative resistance unit is produced using negative resistance；Tail current source unit produces operating current, prevents the second harmonic component of electric current in resonant tank from entering ground, suppresses even-order harmonic and its neighbouring noise.Compared with the prior art, the utility model improves frequency of oscillation, adds output amplitude, reduces phase noise and even-order harmonic noise, improves the precision of current source, meets the performance requirement of millimeter wave frequency band signal source.
Description
Technical field
Oscillator technique field is the utility model is related to, more particularly to a kind of high-frequency wideband voltage controlled oscillator.
Background technology
With continuous improvement of the fast development and people of wireless communication technique to communication requirement, applied to millimeter wave
Wireless communication technique has become the hot spot of Recent study.Therefore, the nucleus module as transceiver in wireless communication, phaselocked loop
Frequency synthesizer directly affects the performance of whole system, and voltage controlled oscillator is then the core electricity of phase-locked loop frequency integrator
Road；
Voltage controlled oscillator (VCO, voltage-controlled oscillator) refers to output frequency and input control electricity
It is pressed with the oscillating circuit of correspondence.At present, voltage controlled oscillator mainly has two kinds of ways of realization, and one kind is that annular (Ring) is voltage-controlled
Oscillator, one kind are inductance capacitance (LC) voltage controlled oscillators.
Phase noise is to determine information transmission quality and the important parameter of reliability.Therefore, the phase noise of VCO oneself through into
For most concerned index in design.In general, the noise source of voltage controlled oscillator can be divided into：Device noise and external interference noise.
Wherein device noise includes thermal noise and flicker noise, and external interference noise includes the substrate noise and power supply noise of metal-oxide-semiconductor.
The noise of voltage controlled oscillator includes three parts：Part I is resonant tank noise, and Part II is cross-couplings
The noise of pipe, Part III are the noise of tail current pipe.Therefore design when, be directed to this several part noise optimize and
Processing.
Existing voltage controlled oscillator includes：LC resonance module, is made of the first inductance, the first capacitance, the second capacitance, for producing
The oscillator signal of frequency of oscillation needed for raw voltage controlled oscillator.Negative resistance circuit, using nmos differential termination power, there is provided negative resistance is to mend
The loss of resonant tank is repaid, to maintain to vibrate.Tail current source circuit, using the less PMOS of flicker noise as tail current source,
Oscillating current needed for oscillating unit is provided.
Traditional LC voltage controlled oscillator, the phase noise in high-frequency band is poor, and output amplitude is relatively low, exists far from satisfaction
Performance requirement on millimeter wave frequency band.
Utility model content
The purpose of this utility model is to provide a kind of high-frequency wideband voltage controlled oscillator, the technical problem to be solved is that：
Phase noise in high-frequency band is poor, and output amplitude is relatively low, far from performance requirement of the satisfaction on millimeter wave frequency band.
The technical solution that the utility model solves above-mentioned technical problem is as follows：A kind of high-frequency wideband voltage controlled oscillator, including：
Input buffer cell, access control voltage, resonant element is transmitted to by voltage signal；
Resonant element, for producing oscillator signal according to voltage signal, output buffer cell is transmitted to by oscillator signal；
Export buffer cell, for oscillator signal into row buffering, and outputting oscillation signal；
Negative resistance unit, for producing negative resistance, the loss of the energy compensating resonant element produced using negative resistance；
Tail current source unit, for producing operating current, prevents the second harmonic component of electric current in resonant tank from entering ground,
Suppress the noise near even-order harmonic, operating current is transmitted to resonant element by negative resistance unit.
The beneficial effects of the utility model are：Resonant element improves frequency of oscillation, adds output amplitude, possesses bigger
Operating frequency range；Using output buffer cell, by resonant element and late-class circuit into row buffering, phase noise is reduced,
There is driving load using the buffer circuit of common-source amplifier structure at the same time；Tail current source unit uses new Wilson's
Current source, and bulky capacitor filtering technique is used, wherein cascode structure can effectively increase output impedance, improve electric current
The precision in source, effectively reduces even-order harmonic noise, meets the performance requirement on millimeter wave frequency band.
Based on the above technical solutions, the utility model can also do following improvement.
Further, the input buffer cell includes one end access control voltage of inductance L2, the inductance L2, the other end
It is connected with resonant element.
It is using the above-mentioned further beneficial effect of scheme：The second harmonic component for suppressing input current enters AC deposition,
Prevent from deteriorating the Q values of resonant tank.
Further, the resonant element includes inductance L1, capacitance C1, capacitance C2, NMOS tube M3 and NMOS tube M4, described
The source electrode of NMOS tube M3 is connected with drain electrode, and is connected with one end of the inductance L1；The source electrode and drain electrode phase of the NMOS tube M4
Even, and it is connected with the other end of the inductance L1；The grid of the NMOS tube M3 and the grid of NMOS tube M4 with the inductance
L2 connections；Capacitance C1 and capacitance the C2 series connection, it is in parallel with the inductance L1 after capacitance C1 and capacitance the C2 series connection.
It is using the above-mentioned further beneficial effect of scheme：Frequency of oscillation is improved, adds output amplitude, possesses bigger
Working range.
Further, the output buffer cell includes NMOS tube M7, NMOS tube M8, capacitance C3, capacitance C4, inductance L3, electricity
The drain electrode of sense L4, resistance R1 and resistance R2, the NMOS tube M7 are connected through resistance R1 with power vd D；The grid of the NMOS tube M7
Pole is connected with one end of the inductance L1；The source electrode ground connection of the NMOS tube M7；The both ends of the capacitance C4 respectively with it is described
The drain electrode of NMOS tube M7 is connected with source electrode；One end of the inductance L3 is connected with the drain electrode of NMOS tube M7, and the other end is defeated with first
Outlet connects；
The drain electrode of the NMOS tube M8 is connected through resistance R2 with power vd D；The grid of the NMOS tube M8 and the inductance
The other end connection of L1；The source electrode ground connection of the NMOS tube M8；The leakage with the NMOS tube M8 respectively of the both ends of the capacitance C3
Pole is connected with source electrode；One end of inductance L4 is connected with the drain electrode of NMOS tube M7, and the other end is connected with the second output terminal.
It is using the above-mentioned further beneficial effect of scheme：Output buffer cell can improve oscillating circuit and late-class circuit
Isolation, and produce preferable load driving.
Further, the negative resistance unit includes PMOS tube M1, PMOS tube M2, NMOS tube M5 and NMOS tube M6；The PMOS
The drain electrode of pipe M1 and PMOS tube M2 are connected with power vd D, and the source electrode of the PMOS tube M1 and the grid of the PMOS tube M2 connect
Connect, the source electrode of the PMOS tube M2 is connected with the grid of the PMOS tube M1, the source electrode of the PMOS tube M1 and the inductance L1
One end connection, and two other ends of the source electrode respectively with the inductance L1 of the PMOS tube M2 are connected；
The source electrode of the NMOS tube M5 and NMOS tube M6 are connected with the tail current source unit, the grid of the NMOS tube M5
Pole is connected with the source electrode of the NMOS tube M6, and the grid of the NMOS tube M6 is connected with the source electrode of the NMOS tube M5, described
Both ends of the drain electrode of NMOS tube M5 and NMOS tube M6 respectively with the inductance L1 are connected.
It is using the above-mentioned further beneficial effect of scheme：Negative resistance can be produced, the energy compensating resonance produced using negative resistance
The loss of unit, ensures that the oscillator signal of resonant element stablizes output.
Further, the tail current source unit include NMOS tube M9, NMOS tube M10, NMOS tube M11, NMOS tube M12,
NMOS tube M13, capacitance C5, capacitance C6 and inductance L5, the source electrode of the NMOS tube M9 is connected with the drain electrode of NMOS tube M10, described
The source electrode access current source I of NMOS tube M9in；The grid of the NMOS tube M9 is connected with the grid of the NMOS tube M10, and with
The grid connection of NMOS tube M11；The drain electrode of the NMOS tube M9, the grid of NMOS tube M11, the grid and NMOS of NMOS tube M12
The grid of pipe M13 accesses bias current sources Ibias；The drain electrode of the NMOS tube M12 is connected with its grid；The NMOS tube M12
Drain electrode of the source electrode respectively with the source electrode and NMOS tube M11 of the NMOS tube M13 be connected；The source electrode of the NMOS tube M10 and institute
State the source grounding of NMOS tube M11；
One end of the capacitance C5 is connected with the source electrode of the NMOS tube M6, other end ground connection；One end of the capacitance C6
Drain electrode with the NMOS tube M13 is connected, other end ground connection；One end of the inductance L5 and the source electrode of the NMOS tube M6 connect
Connect, the other end is connected with the drain electrode of the NMOS tube M13.
It is using the above-mentioned further beneficial effect of scheme：Tail current source unit filters even-order harmonic more than second harmonic
Remove, suppress even-order harmonic influence of the noise to oscillator phase nearby, reduce the channel modulation effect of tail current, subtract
Higher hamonic wave distortion in small oscillator wave, improves the waveform symmetry of oscillator.
Further, the NMOS tube M9, NMOS tube M10, NMOS tube M11 are identical with the breadth length ratio of NMOS tube M12；It is described
The breadth length ratio of NMOS tube M13 is more than the breadth length ratio of the NMOS tube M9.
Brief description of the drawings
Fig. 1 is a kind of module frame chart of high-frequency wideband voltage controlled oscillator of the utility model；
Fig. 2 is a kind of circuit diagram of high-frequency wideband voltage controlled oscillator of the utility model；
Fig. 3 is the operation logic figure of the utility model tail current source unit；
Fig. 4 is a kind of waveform figure of high-frequency wideband voltage controlled oscillator of the utility model；
Fig. 5 is a kind of voltage-controlled scope analogous diagram of high-frequency wideband voltage controlled oscillator of the utility model；
Fig. 6 is a kind of phase noise analogous diagram of high-frequency wideband voltage controlled oscillator of the utility model；
Fig. 7 is a kind of flow chart of the operation method of high-frequency wideband voltage controlled oscillator of the utility model.
In attached drawing, parts list represented by the reference numerals is as follows：
1st, input buffer cell, 2, resonant element, 3, output buffer cell, 4, negative resistance unit, 5, tail current source unit.
Embodiment
The principle and feature of the utility model are described below in conjunction with attached drawing, example is served only for explaining this practicality
It is new, it is not intended to limit the scope of the utility model.
As depicted in figs. 1 and 2, a kind of high-frequency wideband voltage controlled oscillator, including：
Input buffer cell 1, access control voltage, resonant element 2 is transmitted to by voltage signal；
Resonant element 2, for producing oscillator signal according to voltage signal, output buffer cell 3 is transmitted to by oscillator signal；
Export buffer cell 3, for oscillator signal into row buffering, and outputting oscillation signal；
Negative resistance unit 4, for producing negative resistance, the loss of the energy compensating resonant element 2 produced using negative resistance；
Tail current source unit 5, for producing operating current, prevents the second harmonic component of electric current in resonant tank from entering
Ground, while suppress the noise near even-order harmonic, operating current is transmitted to resonant element 2 by negative resistance unit 4.
In above-described embodiment, resonant element 2 improves frequency of oscillation, adds output amplitude, possesses the work frequency of bigger
Rate scope；Using output buffer cell 3, by resonant element 2 and late-class circuit into row buffering, phase noise is reduced, is adopted at the same time
There is driving load with the buffer circuit of common-source amplifier structure；Tail current source unit 5 uses new Wilson's electric current
Source, and bulky capacitor filtering technique is used, wherein cascode structure can effectively increase output impedance, improve current source
Precision, effectively reduces even-order harmonic noise.
Can be as one embodiment of the utility model：As shown in Fig. 2, the input buffer cell 1 includes inductance L2, institute
One end access control voltage of inductance L2 is stated, the other end is connected with resonant element 2.
In above-described embodiment, the input buffer cell 1 is made of inductance L2, using voltage-controlled end inductance, can suppress electricity
The second harmonic component of stream enters AC deposition, so as to suppress the reduction of Q of resonance circuit value.
Can be as one embodiment of the utility model：As shown in Fig. 2, the resonant element 2 includes inductance L1, capacitance
C1, capacitance C2, the source electrode of NMOS tube M3 and NMOS tube M4, the NMOS tube M3 are connected with drain electrode, and with the one of the inductance L1
End connection；The source electrode of the NMOS tube M4 is connected with drain electrode, and is connected with the other end of the inductance L1；The NMOS tube M3's
The grid of grid and NMOS tube M4 are connected with the inductance L2；Capacitance C1 and capacitance the C2 series connection, the capacitance C1 and electricity
Hold in parallel with the inductance L1 after C2 connects.
In above-described embodiment, resonant element 2 includes inductance L1, capacitance C1, capacitance C2, NMOS tube M3 and NMOS tube M4, uses
In the oscillator signal for producing frequency of oscillation needed for voltage controlled oscillator；Resonator is using single in traditional capacitance inductance voltage controlled oscillator
Inductance L is in parallel with capacitance C to be formed, its resonant frequency is represented by：
The resonator of oscillator is using single inductance L1, fixed capacity C1 and fixed capacity C2, NMOS tube M3 and NMOS tube
The variable capacitance formation in parallel that M4 is formed；Unlike conventional resonance chamber, it is parallel in resonator, is improved using fixed capacity
The intrinsic frequency of voltage controlled oscillator；According to traditional circuit resonance frequency expression, the resonant frequency of this example can be obtained：
Wherein, Cf=C1+C2, C1, C2 are respectively fixed capacity C1, the capacitance of fixed capacity C2, and Cf is fixed capacity
The total capacitance value at the both ends after C1 and fixed capacity C2 series connection；Cm=Cm1+Cm2, Cm1, Cm2 are respectively NMOS tube M3, NMOS tube
Capacitance as variable capacitance after M4 source and drain is connected, Cm are the total capacitance at the both ends after NMOS tube M3 and NMOS tube M4 series connection
Value.
Can be as one embodiment of the utility model：As shown in Fig. 2, it is described output buffer cell 3 include NMOS tube M7,
NMOS tube M8, capacitance C3, capacitance C4, inductance L3, inductance L4, resistance R1 and resistance R2, the drain electrode of the NMOS tube M7 is through resistance
R1 is connected with power vd D；The grid of the NMOS tube M7 is connected with one end of the inductance L1；The source electrode of the NMOS tube M7 connects
Ground；The drain electrode with the NMOS tube M7 and source electrode are connected respectively at the both ends of the capacitance C4；One end of the inductance L3 and NMOS
The drain electrode connection of pipe M7, the other end are connected with the first output terminal；
The drain electrode of the NMOS tube M8 is connected through resistance R2 with power vd D；The grid of the NMOS tube M8 and the inductance
The other end connection of L1；The source electrode ground connection of the NMOS tube M8；The leakage with the NMOS tube M8 respectively of the both ends of the capacitance C3
Pole is connected with source electrode；One end of inductance L4 is connected with the drain electrode of NMOS tube M7, and the other end is connected with the second output terminal.
In above-described embodiment, NMOS tube M7, NMOS tube M8, capacitance C3, capacitance C4, inductance L3, inductance L4, resistance R1 and electricity
Hinder the common source buffer circuit that R2 forms ohmic load；Wherein L3, C4 and L4, C3 realize 50 ohms impedance match；Wherein metal-oxide-semiconductor
M7, resistance R1, inductance L3, capacitance C4 and the metal-oxide-semiconductor M8, resistance R2, inductance L4, capacitance C3 are symmetrical structure.
Can be as one embodiment of the utility model：As shown in Fig. 2, the negative resistance unit 4 includes PMOS tube M1, PMOS
Pipe M2, NMOS tube M5 and NMOS tube M6；The drain electrode of the PMOS tube M1 and PMOS tube M2 are connected with power vd D, the PMOS
The source electrode of pipe M1 is connected with the grid of the PMOS tube M2, and the source electrode of the PMOS tube M2 and the grid of the PMOS tube M1 connect
Connect, the source electrode of the PMOS tube M1 is connected with one end of the inductance L1, and the PMOS tube M2 source electrode respectively with the electricity
Feel two other ends connection of L1；
The source electrode of the NMOS tube M5 and NMOS tube M6 are connected with the tail current source unit 5, the NMOS tube M5's
Grid is connected with the source electrode of the NMOS tube M6, and the grid of the NMOS tube M6 is connected with the source electrode of the NMOS tube M5, described
Both ends of the drain electrode of NMOS tube M5 and NMOS tube M6 respectively with the inductance L1 are connected.
In above-described embodiment, PMOS tube M1, the breadth length ratio of PMOS tube M2 are identical；By PMOS tube and NMOS tube cross-couplings
Differential pair forms, and the negative resistance provided is twice of traditional list NMOS, and oscillating circuit is easier starting of oscillation, while the waveform exported is more
Add symmetrical.
Can be as one embodiment of the utility model：As shown in Fig. 2, the tail current source unit 5 include NMOS tube M9,
NMOS tube M10, NMOS tube M11, NMOS tube M12, NMOS tube M13, capacitance C5, capacitance C6 and inductance L5, the NMOS tube M9's
Source electrode is connected with the drain electrode of NMOS tube M10, the source electrode access current source I of the NMOS tube M9in；The grid of the NMOS tube M9 with
The grid of the NMOS tube M10 is connected, and is connected with the grid of NMOS tube M11；The drain electrode of the NMOS tube M9, NMOS tube M11
Grid, the grid of NMOS tube M12 and the grid of NMOS tube M13 access bias current sources Ibias；The leakage of the NMOS tube M12
Pole is connected with its grid；The drain electrode with the source electrode and NMOS tube M11 of the NMOS tube M13 respectively of the source electrode of the NMOS tube M12
Connection；The source grounding of the source electrode of the NMOS tube M10 and the NMOS tube M11；
One end of the capacitance C5 is connected with the source electrode of the NMOS tube M6, other end ground connection；One end of the capacitance C6
Drain electrode with the NMOS tube M13 is connected, other end ground connection；One end of the inductance L5 and the source electrode of the NMOS tube M6 connect
Connect, the other end is connected with the drain electrode of the NMOS tube M13.
In above-described embodiment, tail current source unit 5 uses new Wilson's current source, wherein, NMOS tube M9 and NMOS tube
M10 forms cascode structure, NMOS tube M11 and NMOS tube M13 composition source followers；Wherein, cascade pipe can be effective
Increase output impedance, the precision of current source is also greatly improved.
As shown in figure 3, grids of the initial noisc Vn in NMOS tube M13 enters, by NMOS tube M11, NMOS tube M13 groups
Into source follower after, be V1 in the source electrode output noise of NMOS tube M13, and NMOS tube M12 is the structure that connects of grid leak, is ensured
NMOS tube 12 always works at saturation region, plays the role of a small-signal resistance, is formd in the grid of NMOS tube M12
Noise V2, then by foring the noise V3 of negative-feedback when NMOS tube M9, the NMOS tube M10 of cascade.
Tail current source unit 5 can enter resonant element 2 in the noise that 2 times of resonant frequencies go out by negative resistance unit 4, so that shadow
The phase noise of oscillator is rung, in order to suppress the noise in even-order harmonic, one in parallel is played low-pass filtering on tail current source unit 5
The capacitance C5 of effect, adjusts suitable capacitance so that the cutoff frequency of low-pass filter is less than second harmonic frequency；By adding
The capacitance C5 entered, can so filter out even-order harmonic more than second harmonic, and noise is to oscillator near suppression even-order harmonic
The influence of phase noise, reduces the channel modulation effect of tail current, reduces the higher hamonic wave distortion in oscillator wave, makes
The waveform symmetry of oscillator improves.
As shown in figure 4, the waveform figure of voltage controlled oscillator, which starts to vibrate near 6.7ns, and amplitude approaches
1.2V, shows preferable starting of oscillation effect.
As shown in figure 5, the voltage-controlled scope analogous diagram of voltage controlled oscillator, under the 0-1.8V power voltage supplies of the circuit, work frequency
Rate coverage is 10.7GHz-13.4GHz, and tuning range 22.4%, centre frequency 12.05GHz, realizes broadband height
The effect of frequency voltage controlled oscillator.
As shown in fig. 6, the phase noise analogous diagram of voltage controlled oscillator, phase noise of the circuit at 1MHz for-
111.9dBc/Hz, meets the phase noise requirements of general voltage controlled oscillator.
Can be as one embodiment of the utility model：The NMOS tube M9, NMOS tube M10, NMOS tube M11 and NMOS tube
The breadth length ratio of M12 is identical；The breadth length ratio of the NMOS tube M13 is more than the breadth length ratio of the NMOS tube M9.
As shown in fig. 7, a kind of operation method of high-frequency wideband voltage controlled oscillator, comprises the following steps：
Step 1：The access control voltage of input buffer cell 1, resonant element 2 is transmitted to by voltage signal；
Step 2：Resonant element 2 produces oscillator signal according to voltage signal, and oscillator signal is transmitted to output buffer cell
3；The loss for the energy compensating resonant element 2 that negative resistance unit 4 is produced using negative resistance at the same time；Tail current source unit 5 produces work electricity
Stream, prevents the second harmonic component of electric current in resonant tank from entering ground, suppresses the noise near even-order harmonic, operating current is led to
Cross negative resistance unit 4 and be transmitted to resonant element 2；
Step 3：Buffer cell 3 is exported to oscillator signal into row buffering, and outputting oscillation signal.
In above-described embodiment, resonant element 2 improves frequency of oscillation, adds output amplitude, possesses the work frequency of bigger
Rate scope；Using output buffer cell 3, by resonant element 2 and late-class circuit into row buffering, phase noise is reduced, is adopted at the same time
There is driving load with the buffer circuit of common-source amplifier structure；Tail current source unit 5 uses new Wilson's electric current
Source, and bulky capacitor filtering technique is used, wherein cascode structure can effectively increase output impedance, improve current source
Precision, effectively reduces even-order harmonic noise.
Can be as one embodiment of the utility model：As shown in Fig. 2, the input buffer cell 1 includes inductance L2, institute
One end access control voltage of inductance L2 is stated, the other end is connected with resonant element 2.
In above-described embodiment, the input buffer cell 1 is made of inductance L2, using voltage-controlled end inductance, can suppress electricity
The second harmonic component of stream enters AC deposition, so as to suppress the reduction of Q of resonance circuit value.
Can be as one embodiment of the utility model：As shown in Fig. 2, the resonant element 2 includes inductance L1, capacitance
C1, capacitance C2, the source electrode of NMOS tube M3 and NMOS tube M4, the NMOS tube M3 are connected with drain electrode, and with the one of the inductance L1
End connection；The source electrode of the NMOS tube M4 is connected with drain electrode, and is connected with the other end of the inductance L1；The NMOS tube M3's
The grid of grid and NMOS tube M4 are connected with the inductance L2；Capacitance C1 and capacitance the C2 series connection, the capacitance C1 and electricity
Hold in parallel with the inductance L1 after C2 connects.
In above-described embodiment, resonant element 2 includes inductance L1, capacitance C1, capacitance C2, NMOS tube M3 and NMOS tube M4, uses
In the oscillator signal for producing frequency of oscillation needed for voltage controlled oscillator；Resonator is using single in traditional capacitance inductance voltage controlled oscillator
Inductance L is in parallel with capacitance C to be formed, its resonant frequency is represented by：
The resonator of oscillator is using single inductance L1, fixed capacity C1 and fixed capacity C2, NMOS tube M3 and NMOS tube
The variable capacitance formation in parallel that M4 is formed；Unlike conventional resonance chamber, it is parallel in resonator, is improved using fixed capacity
The intrinsic frequency of voltage controlled oscillator；According to traditional circuit resonance frequency expression, the resonant frequency of this example can be obtained：
Wherein, Cf=C1+C2, C1, C2 are respectively fixed capacity C1, the capacitance of fixed capacity C2, and Cf is fixed capacity
The total capacitance value at the both ends after C1 and fixed capacity C2 series connection；Cm=Cm1+Cm2, Cm1, Cm2 are respectively NMOS tube M3, NMOS tube
Capacitance as variable capacitance after M4 source and drain is connected, Cm are the total capacitance at the both ends after NMOS tube M3 and NMOS tube M4 series connection
Value.
Can be as one embodiment of the utility model：As shown in Fig. 2, it is described output buffer cell 3 include NMOS tube M7,
NMOS tube M8, capacitance C3, capacitance C4, inductance L3, inductance L4, resistance R1 and resistance R2, the drain electrode of the NMOS tube M7 is through resistance
R1 is connected with power vd D；The grid of the NMOS tube M7 is connected with one end of the inductance L1；The source electrode of the NMOS tube M7 connects
Ground；The drain electrode with the NMOS tube M7 and source electrode are connected respectively at the both ends of the capacitance C4；One end of the inductance L3 and NMOS
The drain electrode connection of pipe M7, the other end are connected with the first output terminal；
The drain electrode of the NMOS tube M8 is connected through resistance R2 with power vd D；The grid of the NMOS tube M8 and the inductance
The other end connection of L1；The source electrode ground connection of the NMOS tube M8；The leakage with the NMOS tube M8 respectively of the both ends of the capacitance C3
Pole is connected with source electrode；One end of inductance L4 is connected with the drain electrode of NMOS tube M7, and the other end is connected with the second output terminal.
In above-described embodiment, NMOS tube M7, NMOS tube M8, capacitance C3, capacitance C4, inductance L3, inductance L4, resistance R1 and electricity
Hinder the common source buffer circuit that R2 forms ohmic load；Wherein L3, C4 and L4, C3 realize 50 ohms impedance match；Wherein metal-oxide-semiconductor
M7, resistance R1, inductance L3, capacitance C4 and the metal-oxide-semiconductor M8, resistance R2, inductance L4, capacitance C3 are symmetrical structure.
Can be as one embodiment of the utility model：As shown in Fig. 2, the negative resistance unit 4 includes PMOS tube M1, PMOS
Pipe M2, NMOS tube M5 and NMOS tube M6；The drain electrode of the PMOS tube M1 and PMOS tube M2 are connected with power vd D, the PMOS
The source electrode of pipe M1 is connected with the grid of the PMOS tube M2, and the source electrode of the PMOS tube M2 and the grid of the PMOS tube M1 connect
Connect, the source electrode of the PMOS tube M1 is connected with one end of the inductance L1, and the PMOS tube M2 source electrode respectively with the electricity
Feel two other ends connection of L1；
The source electrode of the NMOS tube M5 and NMOS tube M6 are connected with the tail current source unit 5, the NMOS tube M5's
Grid is connected with the source electrode of the NMOS tube M6, and the grid of the NMOS tube M6 is connected with the source electrode of the NMOS tube M5, described
Both ends of the drain electrode of NMOS tube M5 and NMOS tube M6 respectively with the inductance L1 are connected.
In above-described embodiment, PMOS tube M1, the breadth length ratio of PMOS tube M2 are identical；By PMOS tube and NMOS tube cross-couplings
Differential pair forms, and the negative resistance provided is twice of traditional list NMOS, and oscillating circuit is easier starting of oscillation, while the waveform exported is more
Add symmetrical.
Can be as one embodiment of the utility model：As shown in Fig. 2, the tail current source unit 5 include NMOS tube M9,
NMOS tube M10, NMOS tube M11, NMOS tube M12, NMOS tube M13, capacitance C5, capacitance C6 and inductance L5, the NMOS tube M9's
Source electrode is connected with the drain electrode of NMOS tube M10, the source electrode access current source I of the NMOS tube M9in；The grid of the NMOS tube M9 with
The grid of the NMOS tube M10 is connected, and is connected with the grid of NMOS tube M11；The drain electrode of the NMOS tube M9, NMOS tube M11
Grid, the grid of NMOS tube M12 and the grid of NMOS tube M13 access bias current sources Ibias；The leakage of the NMOS tube M12
Pole is connected with its grid；The drain electrode with the source electrode and NMOS tube M11 of the NMOS tube M13 respectively of the source electrode of the NMOS tube M12
Connection；The source grounding of the source electrode of the NMOS tube M10 and the NMOS tube M11；
One end of the capacitance C5 is connected with the source electrode of the NMOS tube M6, other end ground connection；One end of the capacitance C6
Drain electrode with the NMOS tube M13 is connected, other end ground connection；One end of the inductance L5 and the source electrode of the NMOS tube M6 connect
Connect, the other end is connected with the drain electrode of the NMOS tube M13.
In above-described embodiment, tail current source unit 5 uses new Wilson's current source, wherein, NMOS tube M9 and NMOS tube
M10 forms cascode structure, NMOS tube M11 and NMOS tube M13 composition source followers；Wherein, cascade pipe can be effective
Increase output impedance, the precision of current source is also greatly improved.
As shown in figure 3, grids of the initial noisc Vn in NMOS tube M13 enters, by NMOS tube M11, NMOS tube M13 groups
Into source follower after, be V1 in the source electrode output noise of NMOS tube M13, and NMOS tube M12 is the structure that connects of grid leak, is ensured
NMOS tube 12 always works at saturation region, plays the role of a small-signal resistance, is formd in the grid of NMOS tube M12
Noise V2, then by foring the noise V3 of negative-feedback when NMOS tube M9, the NMOS tube M10 of cascade.
Tail current source unit 5 can enter resonant element 2 in the noise that 2 times of resonant frequencies go out by negative resistance unit 4, so that shadow
The phase noise of oscillator is rung, in order to suppress the noise in even-order harmonic, one in parallel is played low-pass filtering on tail current source unit 5
The capacitance C5 of effect, adjusts suitable capacitance so that the cutoff frequency of low-pass filter is less than second harmonic frequency；By adding
The capacitance C5 entered, can so filter out even-order harmonic more than second harmonic, and noise is to oscillator near suppression even-order harmonic
The influence of phase noise, reduces the channel modulation effect of tail current, reduces the higher hamonic wave distortion in oscillator wave, makes
The waveform symmetry of oscillator improves.
As shown in figure 4, the waveform figure of voltage controlled oscillator, which starts to vibrate near 6.7ns, and amplitude approaches
1.2V, shows preferable starting of oscillation effect.
As shown in figure 5, the voltage-controlled scope analogous diagram of voltage controlled oscillator, under the 0-1.8V power voltage supplies of the circuit, work frequency
Rate coverage is 10.7GHz-13.4GHz, and tuning range 22.4%, centre frequency 12.05GHz, realizes broadband height
The effect of frequency voltage controlled oscillator.
As shown in fig. 6, the phase noise analogous diagram of voltage controlled oscillator, phase noise of the circuit at 1MHz for-
111.9dBc/Hz, meets the phase noise requirements of general voltage controlled oscillator.
Can be as one embodiment of the utility model：The NMOS tube M9, NMOS tube M10, NMOS tube M11 and NMOS tube
The breadth length ratio of M12 is identical；The breadth length ratio of the NMOS tube M13 is more than the breadth length ratio of the NMOS tube M9.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all in this practicality
Within new spirit and principle, any modification, equivalent replacement, improvement and so on, should be included in the guarantor of the utility model
Within the scope of shield.
Claims (7)
- A kind of 1. high-frequency wideband voltage controlled oscillator, it is characterised in that including：Input buffer cell (1), access control voltage, resonant element (2) is transmitted to by voltage signal；Resonant element (2), for producing oscillator signal according to voltage signal, output buffer cell (3) is transmitted to by oscillator signal；Export buffer cell (3), for oscillator signal into row buffering, and outputting oscillation signal；Negative resistance unit (4), for producing negative resistance, the loss of the energy compensating resonant element (2) produced using negative resistance；Tail current source unit (5), for producing operating current, prevents the second harmonic component of electric current in resonant tank from entering ground, Suppress the noise near even-order harmonic, operating current is transmitted to resonant element (2) by negative resistance unit (4).
- A kind of 2. high-frequency wideband voltage controlled oscillator according to claim 1, it is characterised in that the input buffer cell (1) Including inductance L2, one end access control voltage of the inductance L2, the other end is connected with resonant element (2).
- 3. a kind of high-frequency wideband voltage controlled oscillator according to claim 2, it is characterised in that the resonant element (2) includes Inductance L1, capacitance C1, capacitance C2, the source electrode of NMOS tube M3 and NMOS tube M4, the NMOS tube M3 are connected with drain electrode, and with it is described One end connection of inductance L1；The source electrode of the NMOS tube M4 is connected with drain electrode, and is connected with the other end of the inductance L1；It is described The grid of NMOS tube M3 and the grid of NMOS tube M4 are connected with the inductance L2；Capacitance C1 and capacitance the C2 series connection, it is described It is in parallel with the inductance L1 after capacitance C1 and capacitance C2 series connection.
- A kind of 4. high-frequency wideband voltage controlled oscillator according to claim 3, it is characterised in that the output buffer cell (3) Including NMOS tube M7, NMOS tube M8, capacitance C3, capacitance C4, inductance L3, inductance L4, resistance R1 and resistance R2, the NMOS tube M7 Drain electrode be connected through resistance R1 with power vd D；The grid of the NMOS tube M7 is connected with one end of the inductance L1；The NMOS The source electrode ground connection of pipe M7；The drain electrode with the NMOS tube M7 and source electrode are connected respectively at the both ends of the capacitance C4；The inductance L3 One end be connected with the drain electrode of NMOS tube M7, the other end is connected with the first output terminal；The drain electrode of the NMOS tube M8 is connected through resistance R2 with power vd D；The grid of the NMOS tube M8 is with the inductance L1's The other end connects；The source electrode ground connection of the NMOS tube M8；The both ends of the capacitance C3 respectively with the drain electrode of the NMOS tube M8 and Source electrode connects；One end of the inductance L4 is connected with the drain electrode of NMOS tube M7, and the other end is connected with the second output terminal.
- 5. a kind of high-frequency wideband voltage controlled oscillator according to claim 3, it is characterised in that the negative resistance unit (4) includes PMOS tube M1, PMOS tube M2, NMOS tube M5 and NMOS tube M6；The drain electrode of the PMOS tube M1 and PMOS tube M2 with power vd D Connection, the source electrode of the PMOS tube M1 are connected with the grid of the PMOS tube M2, source electrode and the PMOS of the PMOS tube M2 The grid connection of pipe M1, the source electrode of the PMOS tube M1 is connected with one end of the inductance L1, and the source electrode of the PMOS tube M2 Two other ends with the inductance L1 are connected respectively；The source electrode of the NMOS tube M5 and NMOS tube M6 are connected with the tail current source unit (5), the grid of the NMOS tube M5 Pole is connected with the source electrode of the NMOS tube M6, and the grid of the NMOS tube M6 is connected with the source electrode of the NMOS tube M5, described Both ends of the drain electrode of NMOS tube M5 and NMOS tube M6 respectively with the inductance L1 are connected.
- A kind of 6. high-frequency wideband voltage controlled oscillator according to claim 5, it is characterised in that the tail current source unit (5) Including NMOS tube M9, NMOS tube M10, NMOS tube M11, NMOS tube M12, NMOS tube M13, capacitance C5, capacitance C6 and inductance L5, institute The source electrode for stating NMOS tube M9 is connected with the drain electrode of NMOS tube M10, the source electrode access current source I of the NMOS tube M9in；It is described The grid of NMOS tube M9 is connected with the grid of the NMOS tube M10, and is connected with the grid of NMOS tube M11；The NMOS tube M9 Drain electrode, the grid of NMOS tube M11, the grid of the grid of NMOS tube M12 and NMOS tube M13 access bias current sources Ibias； The drain electrode of the NMOS tube M12 is connected with its grid；The source electrode of the NMOS tube M12 source electrode with the NMOS tube M13 respectively Drain electrode with NMOS tube M11 connects；The source grounding of the source electrode of the NMOS tube M10 and the NMOS tube M11；One end of the capacitance C5 is connected with the source electrode of the NMOS tube M6, other end ground connection；One end of the capacitance C6 and institute State the drain electrode connection of NMOS tube M13, other end ground connection；One end of the inductance L5 is connected with the source electrode of the NMOS tube M6, separately One end is connected with the drain electrode of the NMOS tube M13.
- 7. a kind of high-frequency wideband voltage controlled oscillator according to claim 6, it is characterised in that the NMOS tube M9, NMOS tube M10, NMOS tube M11 are identical with the breadth length ratio of NMOS tube M12；The breadth length ratio of the NMOS tube M13 is more than the NMOS tube M9's Breadth length ratio.
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| CN201721426181.XU CN207269218U (en) | 2017-10-31 | 2017-10-31 | A kind of high-frequency wideband voltage controlled oscillator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623492A (en) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | A kind of high-frequency wideband voltage controlled oscillator and its operation method |
| CN108712158A (en) * | 2018-08-28 | 2018-10-26 | 广西师范大学 | A kind of ring voltage-controlled oscillator circuit and oscillator |
| CN110620552A (en) * | 2019-08-30 | 2019-12-27 | 苏州闻颂智能科技有限公司 | Linear voltage-controlled oscillator based on capacitance compensation technology |
-
2017
- 2017-10-31 CN CN201721426181.XU patent/CN207269218U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623492A (en) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | A kind of high-frequency wideband voltage controlled oscillator and its operation method |
| CN108712158A (en) * | 2018-08-28 | 2018-10-26 | 广西师范大学 | A kind of ring voltage-controlled oscillator circuit and oscillator |
| CN108712158B (en) * | 2018-08-28 | 2023-08-11 | 广西师范大学 | Annular voltage-controlled oscillator circuit and oscillator |
| CN110620552A (en) * | 2019-08-30 | 2019-12-27 | 苏州闻颂智能科技有限公司 | Linear voltage-controlled oscillator based on capacitance compensation technology |
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