CN111478668A - Millimeter wave voltage-controlled oscillator with low flicker noise - Google Patents
Millimeter wave voltage-controlled oscillator with low flicker noise Download PDFInfo
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- 238000006880 cross-coupling reaction Methods 0.000 description 2
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
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Abstract
The invention belongs to the technical field of millimeter wave communication, and relates to a millimeter wave voltage-controlled oscillator, in particular to a millimeter wave voltage-controlled oscillator with low flicker noise, which is used for solving the problem that the existing low flicker noise voltage-controlled oscillator is not suitable for a millimeter wave frequency band. According to the invention, by utilizing the characteristic that a potential mixer working mode of a PMOS (P-channel metal oxide semiconductor) tube in the traditional noise circulation voltage-controlled oscillator structure can generate harmonic current, a band-pass frequency-selecting filter working at a third harmonic is added, the inherent third mixing output current in the traditional noise circulation voltage-controlled oscillator structure is converted into voltage, the millimeter wave voltage output with low flicker noise is obtained, and the defect that the traditional structure is only suitable for low frequency is broken; in addition, the structure provided by the invention directly utilizes the third harmonic current for multiplexing, an additional circuit is not required to be added, the overall power consumption is greatly saved, and the structure is simple.
Description
Technical Field
The invention belongs to the technical field of millimeter wave communication, and relates to a millimeter wave voltage-controlled oscillator, in particular to a millimeter wave voltage-controlled oscillator with low flicker noise.
Background
With the development of communication technology, millimeter wave communication technology is beginning to become a research hotspot. As a key circuit module in millimeter wave communication technology, a Voltage Controlled Oscillator (VCO) has many challenges in its design: (1) the deterioration of the phase noise performance, which is mainly caused by a significant drop in the quality factor (Q value) of the passive device after the operating frequency is raised to the millimeter wave band; (2) flicker noise inherent to a Complementary Metal Oxide Semiconductor (CMOS) device itself seriously affects near-end phase noise of the millimeter wave VCO, i.e., flicker noise performance is poor.
Phase noise performance is of primary concern to designers for a good VCO design, and in recent years, a number of low flicker noise configurations have been proposed, wherein a configuration referred to as "noise cycling" reduces both far-end phase noise and near-end phase noise (flicker noise) and is illustrated in fig. 1 by inductor L1And a varactor CvForming a low frequency L C parallel resonant network with a resonant frequency determining the output signal frequency of the VCO, and an NMOS transistor M1、M2Forming cross-coupled pairs, counteracting L C parallel resonance loss, and capacitor C1And C2Is a DC blocking capacitor, a resistor R1And R2For bias resistance, PMOS transistor M3、M4A current source forming a dynamic bias; m3、M4The transient voltage of the tube grid is the superposition of the DC bias voltage and the VCO output voltage when f0+When the transient amplitude of (2) reaches the maximum, M3Minimum bias current and M4The bias current is maximum; similarly, when f is output0+M when transient amplitude reaches minimum3Maximum bias current and M4The bias current is minimal. Compared with the traditional NMOS current source biasing structure, the structure can realize better flicker noise performance, and has two main reasons: (1) the flicker noise of the PMOS tube is smaller than that of the NMOS tube; (2) the NMOS tube and the PMOS tube are used as a noise path of current bias as shown in FIG. 2; for NMOS transistor as a constant current source, the small signal model is a large resistor r0Noise current I of MOS transistornCan only be usedThe drain of the transistor is injected into the resonant cavity (as shown in fig. 2 (a)), thereby generating phase noise; for PMOS tube bias, the drain electrode is grounded and is equivalent to a small resistor with the resistance value of 1/gmWherein g ismFor transconductance, the noise current will be divided into two parts as shown in FIG. 2(b), one part will flow into the cavity, but the majority will still pass through 1/gmThe low-resistance loop flows into the ground, phase noise is not generated, and flicker noise performance is greatly improved because flicker noise also flows into the ground. However, due to the presence of PMOS parasitic capacitance, the ability to suppress flicker noise will not be suitable for high frequency oscillators; as shown in fig. 3, the phase noise conditions for low and high frequencies are shown separately; the difference between the two is basically consistent for the far end, and the difference between the two becomes larger as the frequency is lower in the low frequency band, which indicates that the flicker noise performance is deteriorated for the high frequency oscillator, i.e. the low flicker noise structure is only suitable for the low frequency VCO below 10GHz, but is not suitable for the millimeter wave band.
Disclosure of Invention
The invention aims to provide a millimeter wave voltage-controlled oscillator with low flicker noise, aiming at the problem that the existing voltage-controlled oscillator with low flicker noise is not suitable for a millimeter wave frequency band; by utilizing the characteristic that a potential mixer working mode of a PMOS tube in the traditional structure can generate harmonic current, the secondary current is converted to obtain harmonic voltage output, so that the high-frequency millimeter wave signal output with low flicker noise is realized.
In order to achieve the purpose, the invention adopts the technical scheme that:
the millimeter wave voltage-controlled oscillator with low flicker noise is composed of a noise cycle voltage-controlled oscillator and a band-pass frequency-selecting filter, and is characterized in that the band-pass frequency-selecting filter is connected to a self-mixing port of the noise cycle voltage-controlled oscillator, and the fundamental frequency of the noise cycle voltage-controlled oscillator is f0The band-pass frequency-selecting filter is formed by connecting an inductor and a capacitor in parallel, and the resonance center frequency of the band-pass frequency-selecting filter is 3f0。
Further, the noise-cycle voltage-controlled oscillator comprises an inductor L1And a variable capacitance tube CvL C ofCoupled resonant network, NMOS transistor M1NMOS transistor M2Formed cross-coupled pair, PMOS tube M3PMOS transistor M4Formed dynamic bias current source and blocking capacitor C1And a blocking capacitor C2Bias resistor R1And a bias resistor R2Wherein the inductor L1And a variable capacitance tube CvAfter parallel connection, both ends are respectively connected to the NMOS tube M1And NMOS transistor M2And inductor L1The center tap of the power supply is connected with a power supply; NMOS tube M1Source and PMOS transistor M3Is connected with the source electrode of the NMOS tube M2Source and PMOS transistor M4The source electrodes of the two-way transistor are connected; NMOS tube M1The drain electrode passes through a DC blocking capacitor C1Rear and PMOS transistor M3Is connected with the grid of the NMOS tube M2The drain electrode passes through a DC blocking capacitor C2Rear and PMOS transistor M4The grid electrodes are connected; bias resistor R1One end of the PMOS tube M is connected with3The other end of the grid is connected with a bias voltage and a bias resistor R2One end of the PMOS tube M is connected with4The other end of the grid is connected with bias voltage; PMOS tube M3And PMOS transistor M4The drain terminal of which acts as a self-mixing port.
The invention has the beneficial effects that:
the invention provides a millimeter wave voltage-controlled oscillator with low flicker noise, which is characterized in that a band-pass frequency-selecting filter working at a third harmonic is added by utilizing the characteristic that a potential mixer working mode of a PMOS (P-channel metal oxide semiconductor) tube in the structure of the traditional noise circulation voltage-controlled oscillator can generate harmonic current, so that inherent third mixing output current in the structure of the traditional noise circulation voltage-controlled oscillator is converted into voltage, the millimeter wave voltage output with low flicker noise is obtained, and the defect that the traditional structure is only suitable for low frequency is broken; in addition, the structure provided by the invention directly utilizes the third harmonic current for multiplexing, an additional circuit is not required to be added, the overall power consumption is greatly saved, and the structure is simple.
Drawings
Fig. 1 is a circuit schematic diagram of a conventional noise-cycling voltage-controlled oscillator.
FIG. 2 is a schematic diagram of the noise path for PMOS and NMOS transistor biasing.
Fig. 3 is a graph comparing the noise performance of a conventional noise-cycled vco under low-frequency and high-frequency conditions.
FIG. 4 is a schematic diagram of the mixing operation of a dynamically biased PMOS transistor.
FIG. 5 is a spectrum of current flowing through the drain of the PMOS transistor.
Fig. 6 is a schematic circuit diagram of a low flicker noise millimeter wave voltage controlled oscillator according to the present invention.
FIG. 7 shows a low frequency VCO signal f in accordance with the present invention0+And frequency tripled 3f0+A voltage waveform diagram.
Fig. 8 is a graph comparing the noise performance of the low flicker noise millimeter wave vco of the present invention under low frequency and high frequency conditions.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention provides a millimeter wave voltage-controlled oscillator with low flicker noise, which is based on the design principle that: aiming at the problem that in the traditional structure, due to the existence of parasitic capacitance of a PMOS tube to the ground, the flicker noise performance of direct oscillation in a high-frequency millimeter wave frequency band is deteriorated, so that the direct oscillation is only suitable for the design of a low-frequency oscillator; in the present invention, the dynamically biased PMOS transistor is first re-analyzed as shown in FIG. 4, and the fundamental voltage signal f is applied to the gate of the transistor0And the second harmonic current I _2f generated by the cross-coupled tube necessarily exists at the source electrode0And fourth harmonic current I _4f0Therefore, the dynamic bias PMOS transistor works similarly to a mixer, so that the third harmonic current I _3f is inevitably obtained after mixing at the drain0As shown in fig. 5, which shows the frequency spectrum of the current obtained by drain simulation, it is clear that the tertiary current component is sufficient; thus, the present invention directly adds a work at 3f0The L C resonant cavity converts the current into output voltage, and finally high-frequency millimeter wave output is obtained.
Based on this, the present embodiment provides a millimeter wave voltage controlled oscillator with low flicker noise, the schematic circuit diagram of which is shown in fig. 6, and the voltage controlled oscillator is composed of a noise cycle VCO operating at a low frequency and an inductor L2And a capacitor C3The band-pass frequency-selecting filter is composed of two parts: furthermore, the utility modelSpecifically speaking:
(1) low frequency noise-cycling VCO
In this embodiment, inductor L in the low frequency VCO portion1Is a differential inductor with reduced area to improve quality factor (Q value), inductor L1And a variable capacitance tube CvAn L C parallel resonance network is formed, and the resonance is at a low frequency, the resonance frequency is the fundamental frequency f of the whole structure0(ii) a By varying the tuning voltage VtThe value of the equivalent capacitance value of the variable capacitance tube is changed, so that the resonant frequency of the L C parallel resonant network is changed, and the frequency of the output signal is changed;
NMOS tube M1、M2A cross coupling pair is formed, an equivalent circuit of the cross coupling pair is a resistor with a negative resistance value, and the resistor is used for offsetting the energy loss of the L C parallel resonant network and maintaining oscillation;
capacitor C1And C2Is a DC blocking capacitor, a resistor R1And R2For biasing the resistor and avoiding high-frequency signal leakage, the PMOS tube M3、M4A current source forming a dynamic bias; m3、M4The voltage of the grid electrode of the transistor is the superposition of the DC bias voltage and the VCO output voltage when f0+When the transient amplitude of (2) reaches the maximum, M3Minimum bias current and M4The bias current is maximum; similarly, when f is output0+M when transient amplitude reaches minimum3Maximum bias current and M4The bias current is minimum, namely the whole process is dynamic bias;
(2) band-pass frequency-selecting filter
Inductor L in the present invention2And a capacitor C3Form a band-pass frequency-selective filter with a resonance center frequency of the third harmonic 3f0Inductor L for selecting the third harmonic signal2The Q value can be improved by a differential inductor, and the common mode rejection capability is strong.
In terms of working principle: for an oscillator, the output signal is a large signal; thus transistor M1、M2Has strong nonlinearity, so that many harmonic currents are generated, and the harmonic currents are inevitably generatedWill generate the second harmonic current I _2f0And fourth harmonic current I _4f0The third harmonic current is obtained by the mixing operation shown in fig. 4; after the third harmonic current passes through the band-pass frequency-selective filter, 3f is due to the band-pass characteristic of the filter0The outside signals are suppressed, and finally, frequency tripling signal output is obtained. The low frequency VCO signal f is shown in fig. 70+And frequency tripled 3f0+The voltage waveform and the third harmonic signal are approximate to sine waves, which shows that other harmonics are well suppressed. As shown in fig. 8, the phase noise conditions of the low frequency and the high frequency obtained by simulation of the present invention are shown, and it can be known from the figure that the phase noise difference values of the high frequency and the low frequency are basically consistent no matter in the low frequency band or the high frequency band, which shows that the high frequency signal output by the structure provided by the present invention still has good flicker noise performance, and breaks through the limitation that the traditional structure is only suitable for the low frequency.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. The millimeter wave voltage-controlled oscillator with low flicker noise is composed of a noise cycle voltage-controlled oscillator and a band-pass frequency-selecting filter, and is characterized in that the band-pass frequency-selecting filter is connected to a self-mixing port of the noise cycle voltage-controlled oscillator, and the fundamental frequency of the noise cycle voltage-controlled oscillator is f0The band-pass frequency-selecting filter is formed by connecting an inductor and a capacitor in parallel, and the resonance center frequency of the band-pass frequency-selecting filter is 3f0。
2. The low flicker noise millimeter wave voltage controlled oscillator of claim 1, wherein the noise-cycling voltage controlled oscillator comprises an inductor L1And a variable capacitance tube CvL C parallel resonance network formed, NMOS tube M1NMOS transistor M2Formed cross couplingClosing, PMOS tube M3PMOS transistor M4Formed dynamic bias current source and blocking capacitor C1And a blocking capacitor C2Bias resistor R1And a bias resistor R2Wherein the inductor L1And a variable capacitance tube CvAfter parallel connection, both ends are respectively connected to the NMOS tube M1And NMOS transistor M2And inductor L1The center tap of the power supply is connected with a power supply; NMOS tube M1Source and PMOS transistor M3Is connected with the source electrode of the NMOS tube M2Source and PMOS transistor M4The source electrodes of the two-way transistor are connected; NMOS tube M1The drain electrode passes through a DC blocking capacitor C1Rear and PMOS transistor M3Is connected with the grid of the NMOS tube M2The drain electrode passes through a DC blocking capacitor C2Rear and PMOS transistor M4The grid electrodes are connected; bias resistor R1One end of the PMOS tube M is connected with3The other end of the grid is connected with a bias voltage and a bias resistor R2One end of the PMOS tube M is connected with4The other end of the grid is connected with bias voltage; PMOS tube M3And PMOS transistor M4The drain terminal of which acts as a self-mixing port.
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Cited By (5)
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| CN112653455A (en) * | 2020-12-04 | 2021-04-13 | 电子科技大学 | High-frequency low-power-consumption self-mixing millimeter wave voltage-controlled oscillator |
| CN112653456A (en) * | 2020-12-04 | 2021-04-13 | 电子科技大学 | Low-power consumption is from mixing frequency voltage controlled oscillator |
| CN112737510A (en) * | 2021-03-30 | 2021-04-30 | 深圳大学 | Voltage-controlled oscillator, voltage-controlled oscillation processing method and electronic equipment |
| CN112953392A (en) * | 2021-03-15 | 2021-06-11 | 东南大学 | Millimeter wave voltage-controlled oscillator with third harmonic enhancement |
| CN115549587A (en) * | 2022-09-02 | 2022-12-30 | 电子科技大学 | Low-temperature voltage-controlled oscillator circuit with low flicker noise, chip and quantum measurement and control system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653455A (en) * | 2020-12-04 | 2021-04-13 | 电子科技大学 | High-frequency low-power-consumption self-mixing millimeter wave voltage-controlled oscillator |
| CN112653456A (en) * | 2020-12-04 | 2021-04-13 | 电子科技大学 | Low-power consumption is from mixing frequency voltage controlled oscillator |
| CN112953392A (en) * | 2021-03-15 | 2021-06-11 | 东南大学 | Millimeter wave voltage-controlled oscillator with third harmonic enhancement |
| CN112953392B (en) * | 2021-03-15 | 2023-08-04 | 东南大学 | Millimeter wave voltage-controlled oscillator with third harmonic enhancement |
| CN112737510A (en) * | 2021-03-30 | 2021-04-30 | 深圳大学 | Voltage-controlled oscillator, voltage-controlled oscillation processing method and electronic equipment |
| CN115549587A (en) * | 2022-09-02 | 2022-12-30 | 电子科技大学 | Low-temperature voltage-controlled oscillator circuit with low flicker noise, chip and quantum measurement and control system |
| CN115549587B (en) * | 2022-09-02 | 2024-04-02 | 电子科技大学 | Low-temperature voltage-controlled oscillator circuit with low flicker noise, chip and quantum measurement and control system |
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