CN103050346A - Field emission electron source and preparation method of carbon nanotube graphene composite structure thereof - Google Patents
Field emission electron source and preparation method of carbon nanotube graphene composite structure thereof Download PDFInfo
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Abstract
The invention discloses a field emission electron source and a preparation method of a carbon nanotube graphene composite structure thereof. The field emission electron source comprises a conductive substrate, a graphene film layer and a carbon nanotube array which is directionally perpendicular to the graphene film layer, wherein the graphene film layer is adhered onto the conductive substrate, and one end of each carbon nanotube in the carbon nanotube array is connected with the graphene film layer to form an integrated structure. The emission capacity and stability of the carbon nanotube array field emission electron source are greatly improved, so that the electron source obtains highly efficient and stable emission current, and can bear extremely high emission current density.
Description
Technical field
The present invention relates to the vacuum electronic technical field, be specifically related to a kind of field emission electron source and carbon nano-tube graphene composite structure preparation method thereof.
Background technology
Vacuum electron device just is being fast-developing trend now, and the day by day increase of the market demand, particularly microminiaturized vacuum electron device and integrated vacuum electronic device are the emphasis directions that develops at present.Field emitting electronic source is worked under low temperature or room temperature, compare with the thermionic source in the present electron tube have the brightness height, low in energy consumption, energy dispersive is little, fast response time and without advantages such as hot flashings, therefore as the vacuum electron device electron source, the vacuum electron device performance is increased substantially.
The schematic diagram of field emissive cathode electron source as shown in Figure 1,1 is emitter among the figure, such as molybdenum tip, carbon nano-tube etc.Under the effect of extra electric field, the emitter top end has very high electric field strength, and its surface potential barrier is reduced and attenuate, because tunnel effect, a large amount of electronics escape into from emitter and form free electron the vacuum.
Carbon nano-tube has the characteristics such as nanoscale emission tip, big L/D ratio, high strength, high tenacity, good thermal stability and conductivity, makes it to become desirable field emission material.But utilize carbon nano-tube as field emitting electronic source, the resistance ratio of carbon nano-tube and substrate interface is larger, the capacity of heat transmission with the substrate contact part is significantly less than carbon nano-tube simultaneously, when high current is launched, can produce a large amount of Joule heats and make the interface excess Temperature and burn, even cause carbon nanotube field-emission cathode complete failure.Fig. 2 is the SEM photo after the large current emission of carbon nano pipe array, can be seen by Fig. 2, there are many pittings that dissolve in carbon nano-tube and substrate contact place, dissolve a little is exactly because during large current emission, because of carbon nano-tube and bases heat-conductivity conducting performance bad, produce a large amount of Joule heats and can't go out by Quick diffusing, caused local temperature too high and substrate is dissolved.
Graphene is a kind of novel material with carbon element, has excellent electric conductivity, heat conductivility, mechanical mechanics property.Graphene also shows excellent characteristic as field emission material.Because Graphene has excellent conductive capability and the capacity of heat transmission, and stable chemical property, also can obtain 10 from the edge of Graphene
7~ 10
8A/cm
2Autoelectronic current density.But requiring the edge to be erected in substrate, Graphene could obtain good emitting performance, it is very difficult to realize on the technique that Graphene is erected in substrate according to certain spatial distribution, therefore, the effective current density of Graphene is very little at present, can't satisfy the requirement of vacuum electron device.
Summary of the invention
For above-mentioned prior art, the object of the present invention is to provide a kind of field emission electron source of carbon nano-tube graphene composite structure, it is intended to solve between poor, the total emission current of launch stability that field-emission cathode array in the existing field emission electron source exists low and field emitter and the substrate and has very large heat conduction and the very poor technical problem of electric conductivity of causing of contact heat resistance and contact resistance.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of field emission electron source, it is characterized in that, comprise conductive substrates, graphene film layer and directed carbon nano pipe array perpendicular to the graphene film layer, described graphene film layer sticks on the conductive substrates, and an end of the carbon nano-tube in the described carbon nano pipe array and graphene film layer are connected to form an overall structure.
The diameter of described carbon nano-tube is 1nm ~ 100nm; The diameter of described carbon nano-tube bundle is 10nm ~ 100 μ m; Described carbon nano-tube line width is 10nm ~ 100 μ m.
Described graphene film layer is multilayer or individual layer.
Described conductive substrates is metal substrate or the other materials that is coated with metal electrode.
The preparation method of the carbon nano-tube graphene composite structure of described field emission electron source, it is characterized in that carbon nano-tube and graphene film are grown simultaneously, an end of carbon nano-tube forms linking to each other of atom level with Graphene, form the C-C covalent bond, its preparation process may further comprise the steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face;
2. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film that Graphene is grown at substrate deposition one deck, such as simple substance material or associated alloys films such as nickel, copper, iron;
3. adopt high precision lithography, prepare microwell array or line array according to designing requirement in the good substrate of plated film;
4. material vacuum vapor plating, sputter coating or other plated film modes deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth in the good substrate co-domain of photoetching;
5. the CVD method realization carbon nano pipe array and the Graphene that adopt microwave plasma CVD method (MWCVD) or gas ions to strengthen chemical vapour deposition technique (PECVD) or other types are grown simultaneously.
The preparation method of the carbon nano-tube graphene composite structure of described field emission electron source, it is characterized in that, after the carbon nano-tube of having grown, gap between carbon nano pipe array prepares continuous Graphene again, do not form the C-C covalent bond between carbon nano-tube and the Graphene, its preparation process may further comprise the steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face;
2. adopt high precision lithography, prepare microwell array or line array according to designing requirement in the good substrate of plated film;
3. adopt vacuum vapor plating, sputter coating or other plated film modes to deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth in the good substrate co-domain of photoetching;
4. the CVD method that adopts microwave plasma CVD method (MWCVD) or gas ions to strengthen chemical vapour deposition technique (PECVD) or other types realizes the growth of carbon nano pipe array;
5. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film that Graphene is grown at substrate deposition one deck, such as simple substance material or associated alloys films such as nickel, copper, iron;
6. the CVD method that adopts microwave plasma CVD method (MWCVD) or gas ions to strengthen chemical vapour deposition technique (PECVD) or other types realizes the growth of Graphene continuous film;
Certainly, the 5. with the 3., the 4. step adjustment order as required.
The preparation method of the carbon nano-tube graphene composite structure of described field emission electron source is characterized in that, prepares first graphene film, and carbon nano tube array grows on graphene film does not form the C-C covalent bond between carbon nano-tube and the Graphene again; Its preparation process following steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face;
2. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film that Graphene is grown at substrate deposition one deck, such as simple substance material or associated alloys films such as nickel, copper, iron;
3. the CVD method that adopts microwave plasma CVD method (MWCVD) or gas ions to strengthen chemical vapour deposition technique (PECVD) or other types realizes the growth of Graphene continuous film;
4. adopt high precision lithography, prepare microwell array or line array according to designing requirement at the Graphene continuous film;
5. adopt vacuum vapor plating, sputter coating or other plated film modes to deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth in the good substrate co-domain of photoetching;
6. the CVD method that adopts microwave plasma CVD method (MWCVD) or gas ions to strengthen chemical vapour deposition technique (PECVD) or other types realizes the growth of carbon nano pipe array.
Compared with prior art, the present invention has following beneficial effect:
One, greatly improves emissivities and the stability of carbon nano pipe array field emitting electronic source, so that electron source of the present invention obtains the emission current of efficient stable and can bear high emission;
Two, be applicable to the current emission characteristic requirements higher, particularly require the feds of very high currents density, for example klystron, travelling wave tube, flat panel display, electron microscope, electron beam exposure apparatus, high frequency power amplifier spare and X-ray tube equal vacuum microelectronic component.
Description of drawings
Fig. 1 is the field emission electron source structural representation;
Fig. 2 is the SEM photo after carbon nano pipe array is launched through the overcurrent of high current density;
Fig. 3 is the field emission electron source structural representation of carbon nano-tube and the Graphene composite construction of growing simultaneously;
Fig. 4 is for preparing first the field emission electron source structural representation for preparing again the composite construction of Graphene behind the carbon nano pipe array;
Fig. 5 is for preparing first the Graphene continuous film, the composite construction field emission electron source structural representation that carbon nano-tube forms on Graphene again;
Reference numeral is: 1 is carbon nano pipe array for Graphene, 9 for the intermediate layer between Graphene and the substrate, 8 for substrate, 7 for carbon nano-tube bundle, 6 for the pitting that dissolves formation because of overheated substrate, 5 for anode, 4 for conductive layer, 3 for emitter, 2.
Embodiment
The invention will be further described below in conjunction with the drawings and the specific embodiments.
A kind of field emission electron source of carbon nano-tube graphene composite structure, comprise conductive substrates, graphene film layer and directed carbon nano pipe array perpendicular to the graphene film layer, described graphene film layer sticks on the conductive substrates, and an end of the carbon nano-tube in the described carbon nano pipe array and graphene film layer are connected to form an overall structure.The diameter of described carbon nano-tube is 1nm ~ 100nm.Described graphene film layer is multilayer or individual layer.Described conductive substrates is metal substrate or the other materials that is coated with metal electrode.
Take diameter as 100nm ~ carbon nano-tube bundle of 100 μ m is transmitter unit, perhaps take width as 100nm ~ little carbon nano tube line of 100 μ m, realize easily oriented growth, can obtain stable large emission, make the emission current controllability better, greatly improve stability and the reliability of carbon nanotube field emission; Certainly adopt single-root carbon nano-tube also might realize directed preparation perpendicular to Graphene, adopt structure of the present invention can obtain better performance.Introducing simultaneously graphene layer solves the bad problem of carbon nano-tube and substrate contact and contacts with good the electrically contacting with thermal conductance of substrate with the acquisition carbon nano-tube.The conductivity of Graphene excellence and heat conductivility, the Joule heat that produces when strong emission is very low, and the Joule heat of generation can conduct as quick as thought also to avoid to contact that interface exists is overheated and cause substrate to be melted burning phenomenon.
Claims (7)
1. field emission electron source, it is characterized in that, comprise conductive substrates, graphene film layer and directed carbon nano pipe array perpendicular to the graphene film layer, described graphene film layer sticks on the conductive substrates, and an end of the carbon nano-tube in the described carbon nano pipe array and graphene film layer are connected to form an overall structure.
2. field emission electron source according to claim 1 is characterized in that, the diameter of described carbon nano-tube is 1nm ~ 100nm; The diameter of carbon nano-tube bundle is 10nm ~ 100 μ m; Perhaps the carbon nano-tube line width is 10nm ~ 100 μ m.
3. field emission electron source according to claim 1 is characterized in that, described graphene film layer is multilayer or individual layer.
4. field emission electron source according to claim 1 is characterized in that, described conductive substrates is metal substrate or the other materials that is coated with metal electrode.
5. the preparation method of the carbon nano-tube graphene composite structure of described field emission electron source, it is characterized in that carbon nano-tube and graphene film are grown simultaneously, an end of carbon nano-tube forms linking to each other of atom level with Graphene, form the C-C covalent bond, its preparation process may further comprise the steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face;
2. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film of Graphene growth at substrate deposition one deck;
3. adopt high precision lithography, prepare microwell array or line array according to designing requirement in the good substrate of plated film;
4. adopt vacuum vapor plating, sputter coating or other plated film modes in the good substrate of photoetching, to deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth.
5. the CVD method realization carbon nano pipe array and the Graphene that adopt microwave plasma CVD method or gas ions to strengthen chemical vapour deposition technique or other types are grown simultaneously.
6. the preparation method of the carbon nano-tube graphene composite structure of described field emission electron source, it is characterized in that, it is characterized in that, after the carbon nano-tube of having grown, gap between carbon nano pipe array prepares continuous Graphene again, do not form the C-C covalent bond between carbon nano-tube and the Graphene, its preparation process may further comprise the steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face;
2. adopt high precision lithography, prepare microwell array or line array according to designing requirement in the good substrate of plated film;
3. adopt vacuum vapor plating, sputter coating or other plated film modes to deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth in the good substrate co-domain of photoetching;
4. the CVD method that adopts microwave plasma CVD method or gas ions to strengthen chemical vapour deposition technique or other types realizes the growth of carbon nano pipe array;
5. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film that Graphene is grown at substrate deposition one deck, such as simple substance material or associated alloys films such as nickel, copper, iron;
6. the CVD method that adopts microwave plasma CVD method or gas ions to strengthen chemical vapour deposition technique or other types realizes the growth of Graphene continuous film.
Certainly, the 5. with the 3., the 4. step adjustment order as required.
7. the preparation method of the carbon nano-tube graphene composite structure of described field emission electron source is characterized in that, prepares first graphene film, and carbon nano tube array grows on graphene film does not form the C-C covalent bond between carbon nano-tube and the Graphene again; Its preparation process following steps:
1. select silicon chip or other materials as substrate, remove surperficial foul with acetone, ethanol and deionized water, obtain clean silicon face.
2. adopt vacuum coating, sputter coating or other film plating process to be fit to the continuous film that Graphene is grown at substrate deposition one deck, such as simple substance material or associated alloys films such as nickel, copper, iron.
3. the CVD method that adopts microwave plasma CVD method or gas ions to strengthen chemical vapour deposition technique or other types realizes the growth of Graphene continuous film.
4. adopt high precision lithography, prepare microwell array or line array according to designing requirement at the Graphene continuous film.
5. adopt vacuum vapor plating, sputter coating or other plated film modes to deposit respectively the catalyst stack layer material that is fit to the deposition of carbon nanotubes growth in the good substrate co-domain of photoetching.
6. the CVD method that adopts microwave plasma CVD method or gas ions to strengthen chemical vapour deposition technique or other types realizes the growth of carbon nano pipe array.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395270A (en) * | 2001-03-27 | 2003-02-05 | 佳能株式会社 | Catalyst for forming carbon fibre, its making method and electronic transmitter |
| US20070102111A1 (en) * | 2003-08-18 | 2007-05-10 | President And Fellows Of Harvard College | Controlled nanotube fabrication and uses |
| US20090047520A1 (en) * | 2007-08-14 | 2009-02-19 | Korea Institute Of Science And Technology | Graphene hybrid material and method for preparing same using chemical vapor deposition |
| KR20110016289A (en) * | 2009-08-11 | 2011-02-17 | 고양미 | Producing method of carbon-nanosheets composits |
| CN102208307A (en) * | 2010-03-30 | 2011-10-05 | 西门子公司 | Substrate for a field emitter, and method to produce the substrate and use of substrate |
| CN102482076A (en) * | 2009-08-03 | 2012-05-30 | 仁济大学校产学协力团 | Carbonaceous Nanocomposite Having Novel Structure And Fabrication Method Thereof |
-
2013
- 2013-01-06 CN CN201310002796.XA patent/CN103050346B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395270A (en) * | 2001-03-27 | 2003-02-05 | 佳能株式会社 | Catalyst for forming carbon fibre, its making method and electronic transmitter |
| US20070102111A1 (en) * | 2003-08-18 | 2007-05-10 | President And Fellows Of Harvard College | Controlled nanotube fabrication and uses |
| US20090047520A1 (en) * | 2007-08-14 | 2009-02-19 | Korea Institute Of Science And Technology | Graphene hybrid material and method for preparing same using chemical vapor deposition |
| CN102482076A (en) * | 2009-08-03 | 2012-05-30 | 仁济大学校产学协力团 | Carbonaceous Nanocomposite Having Novel Structure And Fabrication Method Thereof |
| KR20110016289A (en) * | 2009-08-11 | 2011-02-17 | 고양미 | Producing method of carbon-nanosheets composits |
| CN102208307A (en) * | 2010-03-30 | 2011-10-05 | 西门子公司 | Substrate for a field emitter, and method to produce the substrate and use of substrate |
Non-Patent Citations (2)
| Title |
|---|
| DUCK HYUN LEE等: "Versatile Carbon Hybrid Films Composed of Vertical Carbon Nanotubes Grown on Mechanically Compliant Graphene Films", 《ADVANCED MATERIALS》 * |
| 张强 等: "碳纳米管场致发射中的空间电荷效应", 《发光学报》 * |
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