CN103046022B - Based on atomic layer deposition apparatus and the using method thereof of scalable chamber - Google Patents
Based on atomic layer deposition apparatus and the using method thereof of scalable chamber Download PDFInfo
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Abstract
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus based on scalable chamber.Described atomic layer deposition apparatus, comprises vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber; Sediment chamber comprises the first volume and the second volume; When sediment chamber is at aeration status, the volume of sediment chamber is the first volume, and after ventilation terminates, the volume of sediment chamber is the second volume; First volume is greater than the second volume.The present invention also provides a kind of using method of the atomic layer deposition apparatus based on scalable chamber.The present invention is by adopting scalable chamber structure, improve the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce the removal time of cleaning gas residence time and chemical reagent, and then reduce deposition reaction cycle time, process the rete of desired thickness at short notice, improve the life-span of equipment, and the difficulty of vent gas treatment can be reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus based on scalable chamber and using method thereof.
Background technology
In traditional atomic layer deposition apparatus, the time minimum reached needed for self termination is reacted in order to atomic layer deposition apparatus all can be made under any given temperature of reaction, the flow entering the chemical reagent of sediment chamber must reach maximization, thus needs, under the condition of the minimum and high pressure of the diluting effect of rare gas element, molecular precursor is imported sediment chamber.The short deposition cycle time then requires that these molecular precursor must be removed fast from sediment chamber, namely requires that the gas residence time in sediment chamber minimizes.Gas residence time
with sediment chamber's volume
with the pressure in reaction chamber
be directly proportional, with flow
be inversely proportional to, namely
.As can be seen from this formula, reduce pressure
be conducive to the cleaning speed reducing gas residence time and increase chemical reagent precursor.Make sediment chamber minimize the maximize throughput required by reaction chamber the reaction times, utilising efficiency and the flow of gas residence time and chemical reagent are inversely proportional to.Therefore, although reduce flow can increase the utilization ratio of chemical reagent, but can gas residence time be increased, and then increase deposition reaction cycle time.Reduce sediment chamber's volume
also effectively can reduce gas residence time, and diminish due to volume, the density of chemical reagent will become large, and then effectively can improve the utilization ratio of chemical reagent, reduces exhaust gas emission, reduces and pollutes.
Fig. 1 is the state graph of conventional deposition chamber at the four-stage of deposition cycle, in figure, primary depositing generally comprises four-stage reaction time: the first chemical reaction gas reaction, the first cleaning gas cleaning, the second chemical reaction gas reaction and the second cleaning gas cleaning, thus for this four-stage, the state of the deposition chambers under stages respectively is provided.Traditional deposition chambers all keeps the state of the constancy of volume in the four-stage of deposition cycle, according to formula
, the visible factor now affecting gas residence time depends primarily on the size of pressure in chamber and gas flow, and affect the many factors of chamber pressure, and often there is coupled relation in factors, the adjustments of gas residence time is left in the direction be difficult to from changing pressure, the size of gas flow is not by ectocine, only and source bottle output speed have relation, can find that flow is larger from formula, gas residence time is shorter, but also result in the situation that chemical reagent utilization ratio is low like this, so only set about from flow control, also the relation between gas residence time and chemical reagent utilization ratio will reasonably be weighed.In Reaction time shorten and the compromise equilibrium problem improving chemical reagent utilization ratio and cleaning gas residence time and chemical reagent removal time minimum these two aspects, traditional atomic layer deposition apparatus cannot solve very well.Thus can realize short reaction times and good chemical reagent utilization ratio, and cleaning gas residence time and chemical reagent can be made to remove time minimum, be the direction of present atomic layer deposition apparatus development.
Summary of the invention
The object of the present invention is to provide a kind of atomic layer deposition apparatus based on scalable chamber, improve the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce cleaning gas residence time and removal time of chemical reagent, and then reduce deposition reaction cycle time.
Another object of the present invention is to the using method that a kind of atomic layer deposition apparatus based on scalable chamber is provided.
In order to achieve the above object, the technical solution used in the present invention is:
Based on an atomic layer deposition apparatus for scalable chamber, comprise vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber; Described sediment chamber comprises the first volume and the second volume; When described sediment chamber is at aeration status, the volume of described sediment chamber is the first volume, and after ventilation terminates, the volume of described sediment chamber is the second volume; Described first volume is greater than described second volume.
In such scheme, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Described data processing module, processes for the data sent described vacuum component, heater block, gas path component, plasma-generating component.
In such scheme, the temperature controller in described heater block is connected with described data processing module by RS232 serial ports.
In such scheme, the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer.
In such scheme, described data processing module is connected with the electric current and voltage amplification module in described vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In such scheme, described data processing module is connected with the radio-frequency power supply in described plasma-generating component.
In such scheme, described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
Based on a using method for the atomic layer deposition apparatus of scalable chamber, comprise the steps:
The volume of sediment chamber is adjusted to the first volume, then passes into gas to described sediment chamber;
After ventilation terminates, the volume of described sediment chamber is adjusted to the second volume, and described second volume is less than the first volume.
In such scheme, described gas is reactant gases or cleaning gas.
In such scheme, after the volume of described sediment chamber is adjusted to the second volume, described gas carries out reacting or cleaning in described sediment chamber.
Compared with prior art, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention is by adopting scalable chamber structure, improve the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce the removal time of cleaning gas residence time and chemical reagent, and then reduce deposition reaction cycle time, process the rete of desired thickness at short notice, improve the life-span of equipment, and the difficulty of vent gas treatment can be reduced.
Accompanying drawing explanation
Fig. 1 is the state graph of sublayer, prior art Central Plains depositing device at deposition cycle four-stage;
The system construction drawing of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the present invention;
The atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the present invention is in the state graph of deposition cycle four-stage.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 2, the embodiment of the present invention provides a kind of atomic layer deposition apparatus based on scalable chamber, comprises vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber 15; The first volume and the second volume is comprised in sediment chamber 15; When sediment chamber is at aeration status, the volume of sediment chamber is the first volume, and after ventilation terminates, the volume of sediment chamber is the second volume; First volume is greater than the second volume.
Function unit comprises computer 21 and data processing module 22, and computer 21 is connected with data processing module 22, and data processing module 22 is connected with vacuum component, heater block, gas path component, plasma-generating component respectively.Wherein, computer 21, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Data processing module 22, processes for the data sent vacuum component, heater block, gas path component, plasma-generating component.
Computer 21 is as the control axis in atomic layer deposition apparatus, red-tape operati is carried out to the vacuum component of atomic layer deposition apparatus, heater block, gas path component, plasma-generating component, information interchange between operating device all parts, it is the dispatching center of whole equipment, the major portion of the data processing related in the equipment of being responsible for, the request of instruction analysis and transmission in finishing equipment, reception and other parts of process, realize controlling functions, guarantee equipment well runs.
Data processing module 22 is as the auxiliary data processing enter in atomic layer deposition apparatus, the data that the responsible vacuum component to atomic shell equipment, heater block, gas path component, plasma-generating component send process, concrete data processor is have cured in data processing module 22, by analyzing the request of all parts, enable corresponding handling procedure, real-time return result.
Computer 21 of the present invention is connected with data processing module 22, computer 21 is for indicating system operation interface, reception external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module 22 and other parts of equipment are controlled, and receive director data from data processing module 22, the director data received is analyzed, coordinates and control whole atomic layer deposition apparatus and operate in normal operating conditions.Temperature controller 20 in heater block is connected with data processing module 22 by RS232 serial ports, pressure transmitter in vacuum component is connected with data processing module 22 respectively by RS232 with RS485 serial ports with vacuumometer 23, data processing module 22 exchanges treatment channel as radio-frequency power supply 12, mass flow controller 1, mass flow controller 19, electric current and voltage amplification module 25 with the data message of data processing module 22, make whole function unit clear in structure, be convenient to produce.Data processing module 22 is connected with electric current and voltage amplification module 25, and electric current and voltage amplification module 25 is connected with rly. 24, and rly. 24 lower end is pump group power supply 18.Data processing module 22 is connected with magnetic valve 2 to the magnetic valve 7 in gas path component.
The embodiment of the present invention also provides a kind of using method of the atomic layer deposition apparatus based on scalable chamber, comprises the steps:
(1) start-up simulation machine 21, enters atomic layer deposition apparatus Controlling System interface, arranges and estimates deposition reaction time and other working parameter of equipment;
(2) computer 21 sends open command by data processing module 22, supply current amplification module 25 output HIGH voltage, the connection of relay 24, and then opens control pump group power supply 18, starts mechanical pump 17 and molecular pump 16; Data processing module 22 is connected with magnetic valve 2 to the magnetic valve 7 in gas path component, being to regulate gas path on-off to the control of magnetic valve 2 to magnetic valve 5, is the break-make in order to regulate source bottle 8 in gas path component and source bottle 9 to the control of magnetic valve 6 and magnetic valve 7 respectively; The instruction of computer 21, data are sent in mass flow controller and magnetic valve by data processing module 22, open manually-operated gate 10 and manually-operated gate 11, bleed to sediment chamber 15 and pipeline, take out base vacuum (about to 5 × 10
-4torr); The temperature information that data processing module 22 pairs of temperature controllers 20, thermopairs provide carries out analyzing and processing, result is returned to computer 21, the temperature of heating plate, source bottle, pipeline, chamber wall monitored by computer 21, determine that each parts to be heated continue heating or stop heating, make them be operated in the state of temperature of setting, complete the control to gas path component, heater block;
(3) under meter size is set by computer 21, and preserve this value, open mass flow controller 1, mass flow controller 19, magnetic valve 2, magnetic valve 3, gas 26, gas 27 will enter gas circuit, inflate gas path component, computer 21 pairs of system pressures are monitored, in real time when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation;
(4) parameter required for deposition work is set, computer 21 is by the order of parameter access control, be sent to data processing module 22, data processing module 22 is as information channel, the instruction of computer 21 is sent in the receiving-member of radio-frequency power supply 12, control the unlatching of radio-frequency power supply 12 and the setting to output rating, meanwhile, radio-frequency power supply matching box 13 ensures that radio-frequency power supply 12 provides stable power for plasma production system 14.The output rating of radio-frequency power supply 12 feeds back to computer 21 as the quantities received of data processing module 22, computer 21 is analyzed this power, to make the plasma production system 14 in plasma-generating component be operated in stable state, thus complete the control of plasma production part and deposit;
(5) before passing into gas to sediment chamber 15, sediment chamber 15 keeps virgin state, its volume is V1, now source bottle inputs the first reactant gases, after source bottle is closed, the chamber wall that computer 21 controls sediment chamber 15 advances inwards, stops when the volume to sediment chamber 15 is V2, waits for that chemical reagent completes reaction in setting-up time; After reaction terminates, computer 21 controls the first cleaning gas and enters sediment chamber 15, and makes sediment chamber 15 recover original volume V1, and after the first cleaning gas stopping passes into, sediment chamber enters V2 state; After cleaning terminates, same recovery sediment chamber 15 to original state, and pass into the second reactant gases, complete and as above operate equally, treat the second reactant gases after completion of the reaction, pass into the second cleaning gas, carry out identical cleaning process, so just complete a reaction time, as shown in Figure 3;
(6) after deposition reaction end cycle each time, the work of above-mentioned steps (5) is all carried out, until deposition work completes;
(7) after deposition terminates, computer 21 controls n the cycle of whole equipment dry running, carries out purging purification, sends instruction, open magnetic valve 6 and magnetic valve 7, open source bottle 8 and source bottle 9, purify sediment chamber 15 atomic layer deposition apparatus.
(8), after purging terminates, bolt down procedure, completes whole work of ald.
The present invention is from the volume of sediment chamber, devise the chamber that can change volume in deposition cycle four-stage, effective change affects the factor volume V of gas residence time, although the change of V can cause the change of chamber pressure P, but compare the impact of volume change on the residence time, the impact of change on the time of pressure is less, thus can only consider that volume changes the result brought generally.
The present invention is when carrying out ald, the utilization ratio improving chemical reagent while atomic layer deposition apparatus effectively can reduce gas residence time can be guaranteed, reduce reagent waste and tail gas pollution, and can reasonable tradeoff utilization ratio and gas residence time and cleaning gas residence time and the problem between the chemical reagent removal time, shorten the total time of deposition reaction, improve the work-ing life of equipment.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. based on an atomic layer deposition apparatus for scalable chamber, comprise vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber, it is characterized in that: described sediment chamber comprises the first volume and the second volume; When described sediment chamber is at aeration status, the volume of described sediment chamber is the first volume, and after ventilation terminates, the volume of described sediment chamber is the second volume; Described first volume is greater than described second volume;
Wherein, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Described data processing module, processes for the data sent described vacuum component, heater block, gas path component, plasma-generating component;
Wherein, described data processing module is connected with the electric current and voltage amplification module in described vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply;
Wherein, described data processing module is connected with the radio-frequency power supply in described plasma-generating component;
Wherein, described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
2. atomic layer deposition apparatus as claimed in claim 1, is characterized in that: the temperature controller in described heater block is connected with described data processing module by RS232 serial ports.
3. atomic layer deposition apparatus as claimed in claim 1, is characterized in that: the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer.
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| CN103046022B true CN103046022B (en) | 2015-10-28 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310813A (en) * | 2005-03-29 | 2006-11-09 | Mitsui Eng & Shipbuild Co Ltd | Apparatus for forming film |
| CN101356620A (en) * | 2005-10-11 | 2009-01-28 | 阿维扎技术有限公司 | Positive displacement pumping chamber |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310813A (en) * | 2005-03-29 | 2006-11-09 | Mitsui Eng & Shipbuild Co Ltd | Apparatus for forming film |
| CN101356620A (en) * | 2005-10-11 | 2009-01-28 | 阿维扎技术有限公司 | Positive displacement pumping chamber |
| JP2009512206A (en) * | 2005-10-11 | 2009-03-19 | アビザ テクノロジー リミティド | Positive displacement pump chamber |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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