CN103031544A - Atomic layer deposition device capable of rapidly processing data - Google Patents
Atomic layer deposition device capable of rapidly processing data Download PDFInfo
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- CN103031544A CN103031544A CN2011103000067A CN201110300006A CN103031544A CN 103031544 A CN103031544 A CN 103031544A CN 2011103000067 A CN2011103000067 A CN 2011103000067A CN 201110300006 A CN201110300006 A CN 201110300006A CN 103031544 A CN103031544 A CN 103031544A
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Abstract
The invention relates to semiconductor processing equipment and in particular to atomic layer deposition equipment capable of rapidly processing data. The atomic layer deposition equipment comprises a vacuum component, a heating component, an air channel component, a plasma generating component and a computer, wherein the computer comprises a control unit CPU (central processing unit) and a data processing unit GPU (graphics processing unit); the control unit CPU is connected with the vacuum component, the heating component, the air channel component and the plasma generating component, and is used for controlling the vacuum component, the heating component, the air channel component and the plasma generating component; and the data processing unit GPU is connected with the control unit and is used for processing data sent to the control unit by the vacuum component, the heating component, the air channel component and the plasma generating component. With the adoption of the atomic layer deposition equipment capable of rapidly processing the data, control structures of the CPU and the GPU are adopted, so that the processing speed of the atomic layer deposition equipment is improved, the control ability of the equipment is enhanced, the equipment failure is effectively reduced, the whole equipment is concise and distinct in structure; the relation among the components is simple; and the atomic layer deposition equipment is convenient to assemble, produce and maintain.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing equipment, but be specifically related to a kind of atomic layer deposition apparatus of fast processing data.
Background technology
Traditional atomic layer deposition apparatus comprises vacuum component, heater block, gas path component, plasma generation parts and function unit, interconnects between function unit and other each parts, realizes sending and receiving of data command.Yet, the function unit of atomic layer deposition apparatus adopts computer realization more, and computer needs and all parts is contacted directly, and provides adapter according to the input/output interface of each parts, then finish the mutual of data command according to certain communication protocol, as shown in Figure 1.
But, the control texture of existing atomic layer deposition apparatus adopts a plurality of data transmission interfaces and device, a plurality of control devices need to be coordinated and dispatch to computer, may cause steering order not finish in real time, thereby affect the veneer effect of atomic layer deposition apparatus.In addition, in the atomic layer deposition apparatus operational process, need to constantly obtain and analyze the data of each parts, and the deposition growing of film (or thin layer) requires the processing speed of atomic layer deposition apparatus fast as far as possible, otherwise the film that can't obtain expecting (or thin layer), because existing atomic layer deposition apparatus adopts computer interface direct communication control, computer receiving data, there are certain gap in the speed of analyzing and processing data and transmission director data and the desired processing speed of deposition growing of film (or thin layer), and along with the thickness of thin layer constantly reduces, the continuous complexity of atomic layer deposition apparatus structure, this gap can be increasing, finally causes atomic layer deposition apparatus to lose efficacy.
Summary of the invention
But the object of the present invention is to provide a kind of atomic layer deposition apparatus of fast processing data, improved the processing speed of atomic layer deposition apparatus, strengthened the controllability of equipment, effectively reduce equipment failure.
In order to achieve the above object, the technical solution used in the present invention is:
But a kind of atomic layer deposition apparatus of fast processing data comprises vacuum component, heater block, gas path component, plasma generation parts and computer; Described computer comprises control unit, is connected with described vacuum component, heater block, gas path component and plasma generation parts, is used for described vacuum component, heater block, gas path component and plasma generation parts are carried out red-tape operati; And data processing unit is connected with described control unit, processes for the data that described vacuum component, heater block, gas path component and plasma generation parts sent to described control unit.
In the such scheme, described control unit is the CPU of computer, and described data processing unit is the GPU of computer.
In the such scheme, the temperature controller in the described heater block is connected with described computer by the RS232 serial ports.
In the such scheme, the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described computer with the RS485 serial ports.
In the such scheme, described computer connects with the electric current and voltage amplification module of being connected in the vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In the such scheme, described computer is connected with radio-frequency power supply in the described plasma generation parts.
In the such scheme, described computer links to each other with mass flow controller and each magnetic valve in the described gas path component.
Compare with the prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention has improved the processing speed of atomic layer deposition apparatus by adopting the control texture of CPU and GPU, has strengthened the controllability of equipment, effectively reduce equipment failure, whole device structure simple and clear, the relation between all parts is simple, is convenient to assembling, produces and safeguards.
Description of drawings
Fig. 1 is the functional block diagram of sublayer, prior art Central Plains depositing device;
The functional block diagram of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the invention;
The structure iron of the atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples technical solution of the present invention is described in detail.
As shown in Figure 2, but the embodiment of the invention provides a kind of atomic layer deposition apparatus of fast processing data, comprises vacuum component, heater block, gas path component, plasma generation parts and computer 25; Computer 25 comprises control unit, is born by the CPU of computer, is connected with vacuum component, heater block, gas path component and plasma generation parts, is used for vacuum component, heater block, gas path component and plasma generation parts are carried out red-tape operati; And data processing unit is born by the GPU of computer, is connected with control unit, and the data that are used for vacuum component, heater block, gas path component and plasma generation parts are sent to CPU are processed.
CPU is as the control axis in the atomic layer deposition apparatus, vacuum component, heater block, gas path component, plasma generation parts to atomic layer deposition apparatus carry out red-tape operati, information interchange between the operating device all parts, it is the dispatching control center of whole equipment, the request of instruction analysis and transmission, reception and other parts of processing in the equipment of being responsible for, realize the control function, assurance equipment well moves.
GPU is as the data processing centre (DPC) in the atomic layer deposition apparatus, and the data that responsible vacuum component to atomic shell equipment, heater block, gas path component, plasma generation parts send are processed.The composition structure of GPU is different from CPU, it comprises a plurality of arithmetic elements, few control unit, this structure is given its powerful numerical operation ability, can share CPU sends, receive instruction and data and to instruction, data processing pressure outside data analysis is processed, bear the operation of the processing data in the atomic shell equipment running process, CPU can be absorbed in coordinate and the control vacuum component, heater block, gas path component, operation between the plasma generation parts, allow atomic layer deposition apparatus stablize and work fast, satisfy the desired processing speed of deposition growing of film (or thin layer).GPU can carry out concurrent operation, and CPU mainly adopts the account form of serial, thereby the travelling speed of GPU is considerably beyond the speed of multi-core CPU, so that the performance of atomic layer deposition apparatus has obtained very big improvement.
As shown in Figure 3, computer 25 among the present invention is used for the indicating system operation interface, receives external command, the operating parameter of each parts of indicating system, the CPU of computer 25 reaches the control purpose to vacuum component, heater block, gas path component, plasma generation parts transmission operating instruction and data, the director data that receives is analyzed, and the return results behind the GPU reception ﹠ disposal of computer 25, coordinate and control whole atomic layer deposition apparatus to operate in normal operating conditions.Temperature controller 24 in the heater block is connected with computer 25 by the RS232 serial ports, pressure transmitter in the vacuum component is connected with vacuumometer and is connected with computer 25 with the RS485 serial ports by RS232 respectively, GPU exchanges treatment channel as radio-frequency power supply 16, mass flow controller 1, mass flow controller 23, electric current and voltage amplification module 28 and the data message of computer 25, so that whole function unit clear in structure.Computer 25 is connected connection with the electric current and voltage amplification module, electric current and voltage amplification module 28 is connected connection with rly., and rly. 27 lower ends are pump group power supply 22.Computer 25 links to each other with magnetic valve 2 to magnetic valve 9 in the gas path component.
Use when of the present invention, start first computer 25, enter atomic layer deposition apparatus Controlling System interface, this interface comprises skeleton construction schematic diagram, the operational process of animation display atomic layer deposition apparatus, the atomic layer deposition apparatus master routine of atomic layer deposition apparatus operation instruction file, system, arranges and in real time demonstration by the control parameter of computer to equipment.Parameter after setting completed, computer is finished following operation with operating device:
(1) CPU of computer sends open command, supply current amplification module 28 output HIGH voltages, and the connection of relay 27, and then open control pump group power supply 22, start mechanical pump 21 and molecular pump 20.Computer 25 links to each other with magnetic valve 2 to magnetic valve 9 in the gas path component, is in order to regulate gas path on-off to magnetic valve 2 to the control of magnetic valve 5, is respectively in order to regulate source bottle 10 in the gas path component to the break-make of source bottle 13 to magnetic valve 6 to the control of magnetic valve 9.CPU is sent to instruction, the data of computer in mass flow controller and the magnetic valve, opens manually-operated gate 14 and manually-operated gate 15, is bled in sediment chamber 19 and pipeline, takes out base vacuum (approximately to 5 * 10-4torr); GPU carries out analyzing and processing to the temperature information that temperature controller 24, thermopair provide, the result is returned to CPU, the temperature of cpu monitor heating plate, source bottle, pipeline, chamber wall, determine that each parts to be heated continue heating or stopped heating, make them be operated in the state of temperature of setting, finish the control to gas path component, heater block.
(2) by computer installation under meter size, and preserve this value, open mass flow controller 1, mass flow controller 23, magnetic valve 2, magnetic valve 3, gas 29, gas 30 will enter gas circuit, gas path component is inflated, and CPU is to the system pressure Real Time Monitoring, when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation.
(3) the needed parameter of deposition work is set, CPU is with in the order of parameter access control, send in the receiving-member of radio-frequency power supply 16, the unlatching of control radio-frequency power supply 16 and to the setting of output rating, simultaneously, radio-frequency power supply matching box 17 guarantees that radio-frequency power supply 16 provides stable power for plasma generation system 18.Computer is preserved the output rating of radio-frequency power supply, guarantees that the plasma generation system 18 in the plasma generation parts is operated in stable state, thereby finishes the control of plasma production part and deposit.
(4) after deposition finished, CPU controlled n cycle of whole equipment dry running, and atomic layer deposition apparatus is purged purification, sent instruction, opened magnetic valve 5 to magnetic valve 9, and unlatching source bottle 10 purifies sediment chamber 19 to source bottle 13.
(5) after purging finished, bolt down procedure was finished whole work of ald.
The present invention is when carrying out ald, computer can be guaranteed the operation that atomic layer deposition apparatus is reliable and stable, and have an interlock function, and the effectively prevention system performance damage that under improper operation, can cause, arithmetic speed also can satisfy the demand of sedimentation experiment.
The present invention is based on the tall and handsome CUDA(Compute Unified Device Architecturem that reaches company, unified calculation equipment framework) and OpenCL(Open Computing Language) programmed environment, wherein OpenCL be one group for the application programming interface of parallel computation, can utilize simultaneously the calculation function of CPU and GPU, be fit to control texture of the present invention.
The present invention has improved the processing speed of atomic layer deposition apparatus by adopting the control texture of CPU and GPU, has strengthened the controllability of equipment, effectively reduce equipment failure, whole device structure simple and clear, the relation between all parts is simple, is convenient to assembling, produces and safeguards.
In sum, the present invention is directed to the speed of CPU receive data, analyzing and processing data and transmission director data of computer and the desired processing speed of deposition growing of film (or thin layer) and have gap, with the control unit of CPU as whole equipment, adopt arithmetic speed to be higher than the GPU of at least ten times of CPU as the numerical operation unit of whole equipment, processing data real-time, thoroughly solve the computing pressure of CPU, increased substantially the equipment travelling speed.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. but the atomic layer deposition apparatus of fast processing data is characterized in that: comprise vacuum component, heater block, gas path component, plasma generation parts and computer;
Described computer comprises control unit, is connected with described vacuum component, heater block, gas path component and plasma generation parts, is used for described vacuum component, heater block, gas path component and plasma generation parts are carried out red-tape operati; And,
Data processing unit is connected with described control unit, processes for the data that described vacuum component, heater block, gas path component and plasma generation parts sent to described control unit.
But 2. the atomic layer deposition apparatus of fast processing data as claimed in claim 1, it is characterized in that: described control unit is the CPU of computer, described data processing unit is the GPU of computer.
3. but the atomic layer deposition apparatus of fast processing data as claimed in claim 1 is characterized in that: the temperature controller in the described heater block is connected with described computer by the RS232 serial ports.
4. but the atomic layer deposition apparatus of fast processing data as claimed in claim 1 is characterized in that: the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described computer with the RS485 serial ports.
5. but the atomic layer deposition apparatus of fast processing data as claimed in claim 1, it is characterized in that: described computer connects with the electric current and voltage amplification module of being connected in the vacuum component, described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
6. but the atomic layer deposition apparatus of fast processing data as claimed in claim 1 is characterized in that: described computer is connected with radio-frequency power supply in the described plasma generation parts.
7. but the atomic layer deposition apparatus of fast processing data as claimed in claim 1 is characterized in that: described computer links to each other with mass flow controller and each magnetic valve in the described gas path component.
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| CN2011103000067A CN103031544A (en) | 2011-09-29 | 2011-09-29 | Atomic layer deposition device capable of rapidly processing data |
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| CN2011103000067A CN103031544A (en) | 2011-09-29 | 2011-09-29 | Atomic layer deposition device capable of rapidly processing data |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108977796A (en) * | 2018-07-20 | 2018-12-11 | 上海大学 | A kind of device and method using technique for atomic layer deposition deposition oxide film |
| CN111101115A (en) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
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| CN108977796A (en) * | 2018-07-20 | 2018-12-11 | 上海大学 | A kind of device and method using technique for atomic layer deposition deposition oxide film |
| CN111101115A (en) * | 2018-10-25 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
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Application publication date: 20130410 |