CN103046022A - Atomic layer deposition equipment based on telescopic chamber and using method thereof - Google Patents
Atomic layer deposition equipment based on telescopic chamber and using method thereof Download PDFInfo
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- CN103046022A CN103046022A CN2011103095550A CN201110309555A CN103046022A CN 103046022 A CN103046022 A CN 103046022A CN 2011103095550 A CN2011103095550 A CN 2011103095550A CN 201110309555 A CN201110309555 A CN 201110309555A CN 103046022 A CN103046022 A CN 103046022A
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 238000009423 ventilation Methods 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 65
- 238000012545 processing Methods 0.000 claims description 50
- 239000013049 sediment Substances 0.000 claims description 43
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 5
- 238000011022 operating instruction Methods 0.000 claims description 4
- 238000005273 aeration Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 26
- 230000008021 deposition Effects 0.000 abstract description 24
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 22
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000035484 reaction time Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to atomic layer deposition equipment based on a telescopic chamber. The atomic layer deposition equipment comprises a vacuum component, a heating component, a gas path component, a plasma generation component, a control component and a deposition chamber; the deposition chamber comprises a first volume and a second volume; when the deposition chamber is in a ventilation state, the volume of the deposition chamber is a first volume, and after ventilation is finished, the volume of the deposition chamber is a second volume; the first volume is greater than the second volume. The invention also provides a using method of the atomic layer deposition equipment based on the telescopic chamber. By adopting the telescopic chamber structure, the utilization rate of chemical reagents of the atomic layer deposition equipment is improved, the retention time of cleaning gas and the removal time of the chemical reagents are reduced, the deposition reaction period is further shortened, a film layer with required thickness is processed in a short time, the service life of the equipment is prolonged, and the difficulty of tail gas treatment can be reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus based on scalable chamber and using method thereof.
Background technology
In traditional atomic layer deposition apparatus, in order under any given temperature of reaction, all to make the atomic layer deposition apparatus reaction reach the time minimization that stops voluntarily required usefulness, the flow that enters the chemical reagent of sediment chamber must reach maximization, thereby need under the condition of the minimum and high pressure of the diluting effect of rare gas element molecular precursor be imported the sediment chamber.The short deposition cycle time then requires these molecular precursor to remove from the sediment chamber fast, namely requires the gas residence time in the sediment chamber to minimize.Gas residence time
With sediment chamber's volume
With the pressure in the reaction chamber
Be directly proportional, with flow
Be inversely proportional to, namely
Can find out from this formula, reduce pressure
Be conducive to reduce the cleaning speed of gas residence time and increase chemical reagent precursor.The sediment chamber is minimized in the reaction times require to maximize by the flow of reaction chamber, utilising efficiency and the flow of gas residence time and chemical reagent are inversely proportional to.Therefore, can increase the utilization ratio of chemical reagent although reduce flow, but can increase gas residence time, and then increase deposition reaction cycle time.Reduce sediment chamber's volume
Also can effectively reduce gas residence time, and because volume diminishes, and the density of chemical reagent will become greatly, and then utilization ratio that can the Effective Raise chemical reagent, reduce exhaust gas emission, reduce pollution.
Fig. 1 is that the conventional deposition chamber is in the state graph of the four-stage of deposition cycle, among the figure, primary depositing generally comprises four-stage reaction time: the gas cleaning is cleared up in the reaction of the first chemical reaction gas, the first cleaning gas cleaning, the second chemical reaction gas reaction and second, thereby for this four-stage, provide the state of the deposition chambers under the stages respectively.Traditional deposition chambers all keeps the state of the constancy of volume in the four-stage of deposition cycle, according to formula
As seen the factor that affects gas residence time this moment depends primarily on the interior pressure of chamber and the size of gas flow, and affect the many factors of chamber pressure, and often has coupled relation in the factors, be difficult to leave for the adjustments of gas residence time from the direction that changes pressure, the size of gas flow is not subjected to ectocine, only and the source bottle export speed relation arranged, can find that from formula flow is larger, gas residence time is shorter, but so also caused the low situation of chemical reagent utilization ratio, so only set about from flow control, also will reasonably weigh the relation between gas residence time and the chemical reagent utilization ratio.At Reaction time shorten with improve the chemical reagent utilization ratio and cleaning gas residence time and chemical reagent are removed this compromise equilibrium problem aspect two of time minimization, traditional atomic layer deposition apparatus can't finely solve.Thereby can realize short reaction times and good chemical reagent utilization ratio, and can make cleaning gas residence time and chemical reagent remove time minimization, be the direction of present atomic layer deposition apparatus development.
Summary of the invention
The object of the present invention is to provide a kind of atomic layer deposition apparatus based on scalable chamber, improved the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce the removal time of cleaning gas residence time and chemical reagent, and then reduce deposition reaction cycle time.
Another object of the present invention is to provide a kind of using method of the atomic layer deposition apparatus based on scalable chamber.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of atomic layer deposition apparatus based on scalable chamber comprises vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber; Described sediment chamber comprises the first volume and the second volume; When described sediment chamber during at aeration status, the volume of described sediment chamber is the first volume, and after ventilation finished, the volume of described sediment chamber was the second volume; Described the first volume is greater than described the second volume.
In the such scheme, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
In the such scheme, the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
In the such scheme, the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
In the such scheme, described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In the such scheme, described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
In the such scheme, described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
A kind of using method of the atomic layer deposition apparatus based on scalable chamber comprises the steps:
The volume of sediment chamber is adjusted into the first volume, then passes into gas to described sediment chamber;
After ventilation finishes, the volume of described sediment chamber is adjusted into the second volume, described the second volume is less than the first volume.
In the such scheme, described gas is reactant gases or cleaning gas.
In the such scheme, the volume of described sediment chamber is adjusted into the second volume after, described gas reacts in described sediment chamber or cleans.
Compare with the prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention is by adopting scalable chamber structure, improved the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce the removal time of cleaning gas residence time and chemical reagent, and then reduce deposition reaction cycle time, process at short notice the rete of desired thickness, improve the life-span of equipment, and can reduce the difficulty of vent gas treatment.
Description of drawings
Fig. 1 is that sublayer, prior art Central Plains depositing device is in the state graph of deposition cycle four-stage;
The system construction drawing of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the invention;
The atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the invention is in the state graph of deposition cycle four-stage.
Embodiment
Below in conjunction with drawings and Examples technical solution of the present invention is described in detail.
As shown in Figure 2, the embodiment of the invention provides a kind of atomic layer deposition apparatus based on scalable chamber, comprises vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber 15; Comprise the first volume and the second volume in the sediment chamber 15; When sediment chamber during at aeration status, the volume of sediment chamber is the first volume, and after ventilation finished, the volume of sediment chamber was the second volume; The first volume is greater than the second volume.
Function unit comprises computer 21 and data processing module 22, and computer 21 is connected with data processing module 22, and data processing module 22 is connected with vacuum component, heater block, gas path component, plasma generation parts respectively.Wherein, computer 21, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Data processing module 22 is used for the data that vacuum component, heater block, gas path component, plasma generation parts send are processed.
The embodiment of the invention also provides a kind of using method of the atomic layer deposition apparatus based on scalable chamber, comprises the steps:
(1) starts computer 21, enter atomic layer deposition apparatus Controlling System interface, arrange and estimate deposition reaction time and other working parameter of equipment;
(2) computer 21 sends open command by data processing module 22, supply current amplification module 25 output HIGH voltages, and the connection of relay 24, and then open control pump group power supply 18, start mechanical pump 17 and molecular pump 16; Data processing module 22 links to each other with magnetic valve 2 to magnetic valve 7 in the gas path component, being in order to regulate gas path on-off to magnetic valve 2 to the control of magnetic valve 5, is respectively in order to regulate source bottle 8 in the gas path component and the break-make of source bottle 9 to the control of magnetic valve 6 and magnetic valve 7; Data processing module 22 is sent to instruction, the data of computer 21 in mass flow controller and the magnetic valve, opens manually-operated gate 10 and manually-operated gate 11, is bled in sediment chamber 15 and pipeline, takes out base vacuum (approximately to 5 * 10
-4Torr); The temperature information that data processing module 22 pairs of temperature controllers 20, thermopairs provide carries out analyzing and processing, the result is returned to computer 21, the temperature of computer 21 monitoring heating plates, source bottle, pipeline, chamber wall, determine that each parts to be heated continue heating or stopped heating, make them be operated in the state of temperature of setting, finish the control to gas path component, heater block;
(3) by computer 21 the under meter size is set, and preserve this value, open mass flow controller 1, mass flow controller 19, magnetic valve 2, magnetic valve 3, gas 26, gas 27 will enter gas circuit, gas path component is inflated, and 21 pairs of system pressure Real Time Monitorings of computer are when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation;
(4) the needed parameter of deposition work is set, computer 21 is with in the order of parameter access control, send to data processing module 22, data processing module 22 is as information channel, the instruction of computer 21 is sent in the receiving-member of radio-frequency power supply 12, the unlatching of control radio-frequency power supply 12 and to the setting of output rating, simultaneously, radio-frequency power supply matching box 13 guarantees that radio-frequency power supplies 12 provide stable power for plasma generation system 14.The output rating of radio-frequency power supply 12 feeds back to computer 21 as the quantities received of data processing module 22,21 pairs of these power of computer are analyzed, so that the plasma generation system 14 in the plasma generation parts is operated in stable state, thereby finishes the control of plasma production part and deposit;
(5) before passing into gas to sediment chamber 15, sediment chamber 15 keeps virgin state, its volume is V1, this moment, the source bottle was inputted the first reactant gases, after the source bottle is closed, the chamber wall of computer 21 control sediment chambers 15 advances inwards, stops when 15 volume is V2 to the sediment chamber, and the wait chemical reagent is finished reaction in setting-up time; After reaction finished, computer 21 controls the first cleaning gas entered sediment chamber 15, and makes sediment chamber 15 recover original volume V1, and after the first cleaning gas stopped to pass into, the sediment chamber entered the V2 state; After cleaning end, recover equally sediment chamber 15 to original state, and pass into the second reactant gases, finish as above equally operation, after the reaction of the second reactant gases is complete, pass into the second cleaning gas, carry out identical cleaning process, so just finish a reaction time, as shown in Figure 3;
(6) behind deposition reaction end cycle each time, all carry out the work of above-mentioned steps (5), until deposition work is finished;
(7) after deposition finishes, 21 control n cycles of whole equipment dry running of computer, atomic layer deposition apparatus is purged purification, send instruction, open magnetic valve 6 and magnetic valve 7, unlatching source bottle 8 and source bottle 9 purify sediment chamber 15.
(8) after purging finished, bolt down procedure was finished whole work of ald.
The present invention is from the volume of sediment chamber, designed the chamber that in the deposition cycle four-stage, can change volume, effectively change the factor volume V that affects gas residence time, although the variation of V can cause the change of chamber pressure P, but compare the impact of volume change on the residence time, the change of pressure is less on the impact of time, thereby can only consider that generally volume changes the result who brings.
The present invention is when carrying out ald, can guarantee to improve when atomic layer deposition apparatus can effectively reduce gas residence time the utilization ratio of chemical reagent, reduce reagent waste and tail gas pollution, and energy reasonable tradeoff utilization ratio and gas residence time and cleaning gas residence time and the problem between the chemical reagent removal time, shorten the total time of deposition reaction, improved the work-ing life of equipment.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the atomic layer deposition apparatus based on scalable chamber comprises vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber, it is characterized in that: described sediment chamber comprises the first volume and the second volume; When described sediment chamber during at aeration status, the volume of described sediment chamber is the first volume, and after ventilation finished, the volume of described sediment chamber was the second volume; Described the first volume is greater than described the second volume.
2. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that: described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
3. atomic layer deposition apparatus as claimed in claim 2 is characterized in that: the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
4. atomic layer deposition apparatus as claimed in claim 2 is characterized in that: the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
5. atomic layer deposition apparatus as claimed in claim 2, it is characterized in that: described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
6. atomic layer deposition apparatus as claimed in claim 2 is characterized in that: described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
7. atomic layer deposition apparatus as claimed in claim 2 is characterized in that: described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
8. the using method based on the atomic layer deposition apparatus of scalable chamber is characterized in that, comprises the steps:
The volume of sediment chamber is adjusted into the first volume, then passes into gas to described sediment chamber;
After ventilation finishes, the volume of described sediment chamber is adjusted into the second volume, described the second volume is less than the first volume.
9. the using method of atomic layer deposition apparatus as claimed in claim 8 is characterized in that: described gas is reactant gases or cleaning gas.
10. the using method of atomic layer deposition apparatus as claimed in claim 9 is characterized in that: after the volume of described sediment chamber was adjusted into the second volume, described gas reacted in described sediment chamber or cleans.
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| CN201110309555.0A CN103046022B (en) | 2011-10-13 | 2011-10-13 | Atomic layer deposition equipment based on telescopic chamber and using method thereof |
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| CN201110309555.0A CN103046022B (en) | 2011-10-13 | 2011-10-13 | Atomic layer deposition equipment based on telescopic chamber and using method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108026640A (en) * | 2015-07-23 | 2018-05-11 | 梅耶博格（荷兰）有限公司 | The precipitation equipment that can be planned |
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|---|---|---|---|---|
| JP2006310813A (en) * | 2005-03-29 | 2006-11-09 | Mitsui Eng & Shipbuild Co Ltd | Apparatus for forming film |
| US20080245770A1 (en) * | 2005-10-11 | 2008-10-09 | Aviza Technology Limited | Positive Displacement Pumping Chamber |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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2011
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310813A (en) * | 2005-03-29 | 2006-11-09 | Mitsui Eng & Shipbuild Co Ltd | Apparatus for forming film |
| US20080245770A1 (en) * | 2005-10-11 | 2008-10-09 | Aviza Technology Limited | Positive Displacement Pumping Chamber |
| CN101356620A (en) * | 2005-10-11 | 2009-01-28 | 阿维扎技术有限公司 | Positive displacement pumping chamber |
| JP2009512206A (en) * | 2005-10-11 | 2009-03-19 | アビザ テクノロジー リミティド | Positive displacement pump chamber |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108026640A (en) * | 2015-07-23 | 2018-05-11 | 梅耶博格（荷兰）有限公司 | The precipitation equipment that can be planned |
| CN108026640B (en) * | 2015-07-23 | 2021-02-09 | 巴斯夫涂料有限公司 | Programmable deposition apparatus |
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