CN101333653B - Plasma chemical vapor deposition process for preventing generation of bag type defects - Google Patents
Plasma chemical vapor deposition process for preventing generation of bag type defects Download PDFInfo
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- CN101333653B CN101333653B CN200710043405A CN200710043405A CN101333653B CN 101333653 B CN101333653 B CN 101333653B CN 200710043405 A CN200710043405 A CN 200710043405A CN 200710043405 A CN200710043405 A CN 200710043405A CN 101333653 B CN101333653 B CN 101333653B
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Abstract
The invention provides a plasma chemical vapor deposition method that can avoid bag-shaped defects. The bag-shaped defects may be produced on a wafer caused by incomplete reaction of reactant gases due to discontinuity of microwave generators in the prior art. The plasma chemical vapor deposition method that can avoid bag-shaped defects is carried out in a plasma chemical vapor deposition device provided with a plurality of wafer deposition tables, the gas phase deposition device is also respectively equipped with a microwave generator corresponding to each wafer deposition table, and the plasma chemical vapor deposition method comprises two steps of pre-deposition and main deposition, wherein, in the pre-deposition step, the plurality of microwave generators are started at different moments and run all the while, and in the main deposition step, the plurality of microwave power generators are all started at the beginning of the step, and are closed at different moments. The adoption of the method can avoid bag-shaped defects produced in plasma chemical vapor deposition.
Description
Technical field
The present invention relates to the chemical vapour deposition operation, particularly a kind of plasma chemical vapor deposition process of avoiding producing bag type defects.
Background technology
When in plasma chemical vapor deposition equipment, carrying out PCVD; for obtaining higher production efficiency; now can be provided with a plurality of wafer deposition table usually and carry out chemical vapour deposition simultaneously for a plurality of wafers, also corresponding each the wafer deposition table of this chemical vapor depsotition equipment is provided with a microwave generator.With the deposited silicon nitride is example, this chemical vapour deposition comprises pre-deposition and two steps of main deposition, unlatching simultaneously of a plurality of microwave generators in the pre-deposition step usually now, and after unlatching, continue always, and in follow-up main deposition step, being the homogeneity of the silicon nitride mould thickness guaranteeing to generate on a plurality of wafers, a part of microwave generator is just opened when this step begins, remainder is then opened later on, and all microwave generators stop after continuing for some time simultaneously.
Above-mentioned in deposition process, owing between pre-deposition and main deposition step, exist the break-off phenomenon of microwave generator, when microwave generator suspends, gas in the reaction chamber also reacts at crystal column surface, but the gas molecule (as silane and ammonia) of the reaction of this moment can participate in the reaction of plasma body, generate big particle, after finishing follow-up main deposition step, crystal column surface just has a plurality of bag type defects, this bag type defects is except that meeting influences outward appearance, prior can the follow-up technology of influence the making for example can influence the calibration accuracy of photoetching and the accuracy that etching forms figure.
Therefore, how to provide a kind of plasma chemical vapor deposition process of avoiding producing bag type defects, in fact the technical problem that needs to be resolved hurrily for industry.
Summary of the invention
The object of the present invention is to provide a kind of plasma chemical vapor deposition process of avoiding producing bag type defects, can avoid producing bag type defects by described method.
The object of the present invention is achieved like this: a kind of plasma chemical vapor deposition process of avoiding producing bag type defects, it has in the plasma chemical vapor deposition equipment of a plurality of wafer deposition table one and carries out, also corresponding each the wafer deposition table of this vapor deposition apparatus is provided with a microwave generator, this PCVD comprises pre-deposition and main deposition two steps, wherein, in the pre-deposition step, these a plurality of microwave generators are opened constantly in difference, and continue always, in main deposition step, these a plurality of microwave power producers are all opened when step begins, and close constantly in difference.
Produce in the plasma chemical vapor deposition process of bag type defects in above-mentioned avoiding, the power of the microwave generator in this pre-deposition step is all less than the power of the microwave generator in the main deposition step.
Produce in the plasma chemical vapor deposition process of bag type defects in above-mentioned avoiding, this wafer deposition table also is provided with heating unit.
Produce in the plasma chemical vapor deposition process of bag type defects in above-mentioned avoiding, this method is by regulating the temperature of heating unit, the sedimental thickness of guaranteeing to be deposited on the different wafers is even, and wherein, this difference wafer is arranged on the different wafer deposition table and deposits.
Produce in the plasma chemical vapor deposition process of bag type defects in above-mentioned avoiding, this plasma gas deposition method is used for deposited silicon nitride.
Producing bag type defects with can occur the microwave generator interruption in the prior art when carrying out PCVD on wafer compares, microwave generator when the plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention will be led deposition is by original opening constantly in difference, change into when step begins with constantly opening with constantly closing, different constantly closing so can be avoided reactant gases to carry out insufficient reaction and generate bag type defects.
Description of drawings
The plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the schema of avoiding producing the plasma chemical vapor deposition process of bag type defects of the present invention.
Embodiment
Below will be described in further detail the plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention.
The plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention, it carries out in a PCVD equipment, described equipment has reaction chamber, equal amts is individual and corresponding wafer deposition table and the microwave generator that is arranged in the reaction chamber, wherein, described wafer deposition table is used to carry wafer and carries out chemical vapour deposition, and it is provided with the heating unit that is used to heat wafer.In the present embodiment, have two wafer deposition table with described plasma chemical vapor deposition equipment and two power generators are that example describes.
Under the off-the-shelf situation of plasma chemical vapor deposition equipment, referring to Fig. 1, plasma chemical vapor deposition process of the present invention is arranged on (S10) on the wafer deposition table with wafer earlier.
Then proceed pre-deposition (S11), its detailed process is: feed ammonia, silane and other assist gas in the plasma chemical vapor deposition equipment reaction chamber, two microwave generators are opened constantly in difference, and continue always, wherein, the power of described two microwave generators all is stabilized in five hectowatts to kilowatt rank.
Then proceed the main deposition (S12) that microwave generator is just all opened when step begins, its detailed process is: feed ammonia and silane in the plasma chemical vapor deposition equipment reaction chamber, two microwave generators are just opened when step begins, and close constantly in difference, wherein, the power of described two microwave generators is a kilowatt rank.
Evidence adopts the plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention when carrying out chemical vapour deposition, does not have the generation of bag type defects again.
It should be noted that, for guarantee among the present invention respectively on the mutually sedimentary wafer of the enterprising promoting the circulation of qi of two wafer deposition table the thickness of sedimentary silicon nitride even, can regulate the temperature of two heating units or regulate the formation speed of silicon nitride on it with the plasma reaction spacing.
In sum, microwave generator when the plasma chemical vapor deposition process of avoiding producing bag type defects of the present invention will be led deposition is by original opening constantly in difference, change into when step begins with constantly opening with constantly closing, different constantly closing so can be avoided reactant gases to carry out insufficient reaction and generate bag type defects.
Claims (5)
1. the plasma chemical vapor deposition process that can avoid producing bag type defects, it has in the plasma chemical vapor deposition equipment of a plurality of wafer deposition table one and carries out, also corresponding each the wafer deposition table of this vapor deposition apparatus is provided with a microwave generator, this PCVD comprises pre-deposition and main deposition two steps, wherein, in the pre-deposition step, these a plurality of microwave generators are opened constantly in difference, and continue always, it is characterized in that, in main deposition step, these a plurality of microwave generators are all opened when step begins, and close constantly in difference.
2. the plasma chemical vapor deposition process of avoiding producing bag type defects as claimed in claim 1 is characterized in that, the power of the microwave generator in this pre-deposition step is all less than the power of the microwave generator in the main deposition step.
3. the plasma chemical vapor deposition process of avoiding producing bag type defects as claimed in claim 1 is characterized in that, this wafer deposition table also is provided with heating unit.
4. the plasma chemical vapor deposition process of avoiding producing bag type defects as claimed in claim 3, it is characterized in that, this method is by regulating the temperature of heating unit, the sedimental thickness of guaranteeing to be deposited on the different wafers is even, wherein, this difference wafer is arranged on the different wafer deposition table and deposits.
5. the plasma chemical vapor deposition process of avoiding producing bag type defects as claimed in claim 1 is characterized in that, this PCVD method is used for deposited silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710043405A CN101333653B (en) | 2007-06-29 | 2007-06-29 | Plasma chemical vapor deposition process for preventing generation of bag type defects |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710043405A CN101333653B (en) | 2007-06-29 | 2007-06-29 | Plasma chemical vapor deposition process for preventing generation of bag type defects |
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| Publication Number | Publication Date |
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| CN101333653A CN101333653A (en) | 2008-12-31 |
| CN101333653B true CN101333653B (en) | 2010-05-19 |
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| CN200710043405A Active CN101333653B (en) | 2007-06-29 | 2007-06-29 | Plasma chemical vapor deposition process for preventing generation of bag type defects |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102443786A (en) * | 2011-11-08 | 2012-05-09 | 上海华力微电子有限公司 | Method for strengthening uniformity of chemical vapor deposition film by improved plasma |
| CN105336574B (en) * | 2014-08-07 | 2020-12-25 | 无锡华润上华科技有限公司 | Manufacturing method of silicon nitride film and MIM capacitor |
| CN112725769B (en) * | 2021-04-02 | 2021-07-23 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition method and apparatus using electronic cam control |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598049A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for plasma strengthening type chemical vapour phase deposition treatment |
| CN1598050A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for high concentration plasma chemical vapour phase deposition by multi-step deposition |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598049A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for plasma strengthening type chemical vapour phase deposition treatment |
| CN1598050A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for high concentration plasma chemical vapour phase deposition by multi-step deposition |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2005-68471A 2005.03.17 |
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