CN209981180U - Gas automatic control energy-saving system and semiconductor processing equipment - Google Patents
Gas automatic control energy-saving system and semiconductor processing equipment Download PDFInfo
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- CN209981180U CN209981180U CN201920956883.1U CN201920956883U CN209981180U CN 209981180 U CN209981180 U CN 209981180U CN 201920956883 U CN201920956883 U CN 201920956883U CN 209981180 U CN209981180 U CN 209981180U
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- gas
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- flow dividing
- saving system
- storage tank
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 238000001514 detection method Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 description 159
- 238000000034 method Methods 0.000 description 12
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
A gas automatic control energy saving system and a semiconductor processing apparatus, the gas automatic control energy saving system comprising: one end of the gas storage tank is communicated to the reaction chamber; the flow dividing device comprises a first port, a second port and a third port, the first port is communicated to the gas storage tank through a pipeline, the second port is communicated to a reaction device through a pipeline, and the third port is communicated to the gas generation device through a pipeline; the reaction device comprises a fourth port and a fifth port, the fourth port is communicated to the flow dividing device through a pipeline and is used for enabling the gas input into the reaction device by the flow dividing device to react to generate product gas, and the fifth port is used for outputting the product gas; and the gas generating device is connected with the third port and used for generating gas and outputting the gas to the reaction device. The gas automatic control energy-saving system can reduce power consumption and save cost.
Description
Technical Field
The utility model relates to a semiconductor equipment field especially relates to a gaseous automatic control economizer system and semiconductor processing equipment.
Background
In some semiconductor processes, O is used3As a reaction gas, due to O3Toxicity and strong oxidizing property of, in practical use, O3Is formed by O2And N2Continuously reacting in a reactor to generate O with corresponding concentration3And then introduced into the reaction chamber. The reactor is also continuously and powerfully producing O when the semiconductor processing machine is idle3Due to O3Without introducing O into the reaction chamber3And MnO with MnO2The reaction is discharged into the plant to cause a large amount of electricity and O2And N2Is wasted.
Therefore, the loss is further reduced and the cost is saved on the basis of the prior art.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a gaseous automatic control economizer system and semiconductor processing equipment are provided, can reduce the loss, practice thrift the cost.
In order to solve the above problem, the utility model provides a gaseous automatic control economizer system, include: one end of the gas storage tank is communicated to the reaction chamber; the flow dividing device comprises a first port, a second port and a third port, the first port is communicated to the gas storage tank through a pipeline, the second port is communicated to a reaction device through a pipeline, and the third port is communicated to the gas generation device through a pipeline; the reaction device comprises a fourth port and a fifth port, the fourth port is communicated to the flow dividing device through a pipeline and is used for enabling the gas input into the reaction device by the flow dividing device to react to generate product gas, and the fifth port is used for outputting the product gas; and the gas generating device is connected with the third port and used for generating gas and outputting the gas to the reaction device.
Optionally, the fifth port is used for communicating to an exhaust gas treatment device.
Optionally, the gas generating means is for generating O3。
Optionally, the method further includes: and the control module is connected with the gas generating device and used for controlling the concentration of the gas output by the gas generating device.
Optionally, MnO is arranged in the reaction device2For reaction with O3Reacting to produce a product gas O2。
Optionally, the flow dividing device is a three-way valve.
Optionally, the flow dividing device includes a flow dividing air storage tank, and the first port, the second port and the third port are all disposed on the flow dividing air storage tank.
Optionally, the method further includes: a first detection device and a second detection device; the first detection device is connected to the gas storage tank and is used for detecting the gas concentration in the gas storage tank; the second detection device is connected to the flow dividing device and used for detecting the concentration of the gas in the flow dividing device.
Optionally, a first valve is arranged between the gas storage tank and the reaction chamber, a second valve is arranged between the flow dividing device and the gas storage tank, and a third valve is arranged between the flow dividing device and the reaction device.
Particular embodiments of the present invention also provide a semiconductor processing apparatus, include: an automatic gas control energy-saving system; a reaction chamber; one end of a gas storage tank of the gas automatic control energy-saving system is communicated to the reaction chamber.
The gas automatic control energy-saving system of the utility model comprises a gas storage tank, which can store gas when the gas is not needed to be introduced into the reaction chamber; the gas generating device is used for generating gas, and the gas is used for generating gas.
Furthermore, the gas automatic control energy-saving system also comprises a control module, and the power of the gas generating device is reduced when gas is not required to be introduced into the reaction chamber, so that the power consumption is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
The following describes in detail specific embodiments of the gas automatic control energy-saving system and the semiconductor processing apparatus provided by the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
The semiconductor processing equipment comprises a gas automatic control energy-saving system, and the gas automatic control energy-saving system comprises: a gas storage tank 201, a flow dividing device 202, a reaction device 203 and a gas generating device 204.
The semiconductor processing apparatus further includes a reaction chamber 100 for performing semiconductor processing on the wafer. The reaction chamber 100 is connected to a pump 102 for pumping the exhaust gas of the reaction chamber 100 during the semiconductor processing process to the plant side.
In this embodiment, the semiconductor processing apparatus is for performing a chemical vapor deposition process, particularly a high aspect ratio chemical vapor deposition process (HARP CVD); in other embodiments, the semiconductor processing apparatus may also be an ultraviolet curing apparatus. The gas automatic control energy-saving system is used for providing O to the reaction chamber 100 when the semiconductor processing equipment performs the semiconductor processing technology3。
In other embodiments, the semiconductor processing equipment may also be equipment for performing other semiconductor processing processes, and accordingly, the gas automatic control energy-saving system is used for providing the required corresponding gas into the reaction chamber of the semiconductor processing equipment.
One end of the gas storage tank 201 is communicated to the reaction chamber 100 through a pipeline, and is used for introducing gas into the reaction chamber 100 in the process of performing chemical semiconductor processing in the reaction chamber 100. The gas tank 201 is used for storing gas with a set concentration to meet the requirements of the semiconductor processing process in the reaction chamber 100. In this embodiment, a first valve 501 is disposed on a pipeline between the gas storage tank 201 and the reaction chamber 100, and is used to control the on-off state between the gas storage tank 201 and the reaction chamber 100. When gas needs to be introduced into the reaction chamber 100, the first valve 501 is opened; when gas is not required to be introduced into the reaction chamber 100, the first valve 501 is closed.
The flow dividing device 202 comprises a first port, a second port and a third port, wherein the first port is communicated to the gas storage tank 201 through a pipeline and is used for introducing gas into the gas storage tank 201; the second port is communicated to the reaction device 203 through a pipeline and is used for introducing gas into the reaction device 203 to perform chemical reaction; the third port is communicated to a gas generating device 204 through a pipeline, and the gas generating device 204 is used for generating gas required by the semiconductor equipment during a semiconductor process, and introducing the gas to the flow dividing device 202 through the third port. In this embodiment, in order to control the on/off state between the flow dividing device 202 and the gas tank 201 and between the flow dividing device 202 and the reaction device 203, a second valve 502 is provided upstream in a pipeline between the flow dividing device 202 and the gas tank 201, and a third valve 503 is provided in a pipeline between the flow dividing device 202 and the reaction device 203. In this specific embodiment, the flow dividing device 202 includes a flow dividing gas storage tank, and the first port, the second port and the third port are all disposed on the flow dividing gas storage tank, and the flow dividing gas storage tank can be used to store a part of gas, so as to buffer the change of the gas concentration in the gas automatic control energy saving system. In other embodiments, the flow diversion device 202 may be a three-way valve with three ports.
The second valve 502 and the third valve 503 are controlled so that the flow dividing device 202 divides the gas introduced by the gas generating device 204 to the gas storage tank 201 and/or the reaction device 203 according to the state of the equipment.
The reaction device 203 comprises a fourth port and a fifth port, the fourth port is communicated to the flow dividing device 202 through a pipeline, and is used for enabling the gas input into the reaction device 203 by the flow dividing device 202 to react to generate a product gas, and the fifth port is used for outputting the product gas.
The fifth port of the reaction device 203 is used for connecting to a tail gas treatment device 401 of the semiconductor processing equipment, and the tail gas treatment device 401 generally treats tail gas discharged from the semiconductor processing technology through a combustion reaction and discharges the tail gas to a plant service end. The reaction device 203 introduces product gas into the tail gas treatment device 401, and the product gas can improve the treatment efficiency of the tail gas treatment device 401 on the tail gas.
In this specific embodiment, the gas automatic energy saving system further includes a control module 601, where the control module 601 is connected to the gas generating device 204 and is configured to control the concentration of the gas output by the gas generating device 204. When gas needs to be introduced into the reaction chamber 100, the control module 601 increases the gas generation power of the gas generation device 204, and increases the concentration of the process gas, so as to generate a gas concentration meeting the requirement of the reaction chamber 100. When gas does not need to be introduced into the reaction chamber 100, the control module 601 reduces the gas generation power of the gas generation device 204, so that the concentration of the generated gas is reduced, thereby reducing power consumption.
The gas automatic energy-saving system further comprises: a first detection means 301 and a second detection means 302; the first detection device 301 is connected to the gas storage tank 201 and is used for detecting the concentration of the gas in the gas storage tank 201; the second detecting device 302 is connected to the flow dividing device 202 for detecting the gas concentration in the flow dividing device 202.
In this embodiment, the gas generator 204 is configured to pass O2And N2Reaction to produce O3. When gas needs to be introduced into the reaction chamber 100, the first valve 501 is opened to introduce the gas with the set concentration stored in the gas storage tank 201 into the reaction chamber 100, and at this time, the second valve502 are closed. Meanwhile, the control module 601 controls the gas generating device 204 to generate O with a set concentration by controlling the reaction power and the concentration of the reaction gas of the gas generating device 204, and the like3. In this embodiment, the set concentration is 12.5%. When the second detecting device 302 detects that the gas concentration in the flow divider 202 reaches the set concentration of 12.5%, the second valve 502 is opened, the third valve 503 is closed, and the gas generated by the gas generating device 204 passes through the flow divider 202 and then is introduced into the reaction chamber 100 through the gas container 201. The second detecting device 302 can monitor the concentration of the gas flowing through the flow dividing device 202 in real time to ensure that the concentration of the gas entering the gas storage tank 201 reaches a set concentration of 12.5%. The second detecting device 302 may further be connected to the control module 601, and the control module 601 may adjust parameters such as the gas generating power of the gas generating device 204 according to the detection result of the second detecting device 302, so as to adjust the concentration of the gas generated by the gas generating device 204.
The first detection device 301 and/or the second detection device 302 may be connected to one or more of the first valve 501, the second valve 502, and the third valve 503, and the first valve 501, the second valve 502, and the third valve 503 may be electronic valves, and switch between an open state and a closed state according to the gas concentrations detected by the first detection device 301 and the second detection device 302. In one embodiment, the second detecting device 302 is connected to the second valve 502 and the third valve 503 respectively, and when the second detecting device 302 detects that the gas concentration is 12.5% of the set concentration, the second valve 502 is controlled to be opened and the third valve 503 is controlled to be closed.
When the semiconductor processing process in the reaction chamber 100 is completed, the first valve 501 is closed, the gas in the gas storage tank 201 does not enter the reaction chamber 100 any more, at this time, the second valve 502 is continuously kept open, the third valve 503 is closed, and the gas storage tank 201 is subjected to O with the concentration of 12.5%3To be stored. The first detecting device 301 is further configured to detect a gas pressure within the gas storage tank 201, when the gas pressure reaches a valueWhen the gas in the gas tank 201 is full, the second valve 502 is closed.
After the second valve 502 is closed, the gas generating device 204 still generates gas, and at this time, the control module 601 may reduce the gas generating power of the gas generating device 204, the concentration of the reactive gas, and the like to reduce the concentration of the generated gas, thereby reducing power consumption and saving cost. For example, the gas generator 204 may be controlled to produce 5% O3. After the second valve 502 is closed, the third valve 503 is opened to make the concentration of O5%3Flows into the reaction apparatus 203. MnO is arranged in the reaction device 2032For reaction with O3Reacting to produce a product gas O2. Product gas O2The combustion efficiency of the tail gas treatment device 401 during combustion of the tail gas is improved by introducing the tail gas treatment device 401, and O is saved2And (4) consumption.
Since a certain time is required for the concentration change of the gas generated in the gas generating device 204 and a certain buffering time is also required for the time for obtaining the stable concentration and flow rate, the volume of the gas tank 201 needs to be set appropriately so that the gas tank 201 can store a sufficient amount of gas with a set concentration to introduce the gas into the reaction chamber 100, and the gas tank 201 can still introduce the gas with a concentration requirement into the reaction chamber 100 before the gas generated by the gas generating device 204 reaches the set concentration and forms a stable flow rate.
In the above embodiment, when gas does not need to be introduced into the reaction chamber 100, the concentration of the gas generated by the gas generating device 204 is reduced, so as to reduce power consumption and save cost; further, the gas generated by the gas generator 204 is used to improve the exhaust gas treatment efficiency of the exhaust gas treatment device 401, thereby reducing the gas waste.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. An automatic gas control energy-saving system is characterized by comprising:
one end of the gas storage tank is communicated to the reaction chamber;
the flow dividing device comprises a first port, a second port and a third port, the first port is communicated to the gas storage tank through a pipeline, the second port is communicated to a reaction device through a pipeline, and the third port is communicated to the gas generation device through a pipeline;
the reaction device comprises a fourth port and a fifth port, the fourth port is communicated to the flow dividing device through a pipeline and is used for enabling the gas input into the reaction device by the flow dividing device to react to generate product gas, and the fifth port is used for outputting the product gas;
and the gas generating device is connected with the third port and used for generating gas and outputting the gas to the reaction device.
2. The gas automatic control energy saving system of claim 1, wherein the fifth port is used for communicating to an exhaust gas treatment device.
3. The gas automatic control energy saving system of claim 1, wherein the gas generating device is used for generating O3。
4. The gas automatic control energy saving system according to claim 1, further comprising: and the control module is connected with the gas generating device and used for controlling the concentration of the gas output by the gas generating device.
5. The automatic gas control energy-saving system according to claim 1, wherein MnO is arranged in the reaction device2For reaction with O3Reacting to produce a product gas O2。
6. The automatic gas control energy saving system of claim 1, wherein the flow dividing device is a three-way valve.
7. The gas automatic control energy-saving system according to claim 1, wherein the flow dividing device comprises a flow dividing gas storage tank, and the first port, the second port and the third port are all disposed on the flow dividing gas storage tank.
8. The gas automatic control energy saving system according to claim 1, further comprising: a first detection device and a second detection device; the first detection device is connected to the gas storage tank and is used for detecting the gas concentration in the gas storage tank; the second detection device is connected to the flow dividing device and used for detecting the concentration of the gas in the flow dividing device.
9. The automatic gas control energy-saving system according to claim 1, wherein a first valve is disposed between the gas storage tank and the reaction chamber, a second valve is disposed between the flow dividing device and the gas storage tank, and a third valve is disposed between the flow dividing device and the reaction device.
10. A semiconductor processing apparatus, comprising:
the gas automatic control energy saving system according to any one of claims 1 to 9;
a reaction chamber;
one end of a gas storage tank of the gas automatic control energy-saving system is communicated to the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920956883.1U CN209981180U (en) | 2019-06-24 | 2019-06-24 | Gas automatic control energy-saving system and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920956883.1U CN209981180U (en) | 2019-06-24 | 2019-06-24 | Gas automatic control energy-saving system and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209981180U true CN209981180U (en) | 2020-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920956883.1U Expired - Fee Related CN209981180U (en) | 2019-06-24 | 2019-06-24 | Gas automatic control energy-saving system and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209981180U (en) |
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2019
- 2019-06-24 CN CN201920956883.1U patent/CN209981180U/en not_active Expired - Fee Related
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Granted publication date: 20200121 |