CN106449466A - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
- Publication number
- CN106449466A CN106449466A CN201510489586.7A CN201510489586A CN106449466A CN 106449466 A CN106449466 A CN 106449466A CN 201510489586 A CN201510489586 A CN 201510489586A CN 106449466 A CN106449466 A CN 106449466A
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- Prior art keywords
- substrate
- processing chamber
- transmission cavity
- vacuum lock
- mechanical arm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a substrate processing system, and the system comprises an equipment front end module group, a first vacuum lock, a first transmission cavity, a second vacuum lock, a second transmission cavity, at least one first processing cavity, and at least one second processing cavity. The first vacuum lock is connected with the equipment front end module group and the first transmission cavity. The second vacuum lock is connected with the first transmission cavity and the second transmission cavity. The first processing cavity is connected with the second transmission cavity. The second processing cavity is connected with the first transmission cavity. The interior of the first transmission cavity is provided with a first mechanical arm, and the first mechanical arm is used for achieving the conveying of the substrate among the first vacuum lock, the second vacuum lock and at least one second processing cavity. The interior of the second transmission cavity is provided with a second mechanical arm, and the second mechanical arm is used for achieving the conveying of the substrate between the second vacuum lock and at least one first processing cavity. The system provided by the invention improves the substrate processing efficiency, and improves the production efficiency of a device.
Description
Technical field
The present invention relates to a kind of vacuum flush system, more particularly, to a kind of substrate for producing semiconductor device
Processing system.
Background technology
Existing substrate handling system is usually vacuum cluster device (cluster), as shown in Figure 1.This is true
Empty set group facility includes front equipment end module 11, vacuum lock (load lock) 12, transmission cavity (transfer
Chamber) 13 and multiple processing chamber 14, wherein, mechanical arm (robot) 15 is installed in transmission cavity 13,
This mechanical arm 15 is used for taking out pending substrate in vacuum lock 12, and is placed into any one processing chamber 14
In, in processing chamber 14, pending substrate is processed, after the completion for the treatment of Substrate treatment, mechanical arm 15
Again the substrate having processed is taken out in processing chamber 14, send it in ambient atmosphere environment.
In some cases, substrate is sending into processing chamber 14 before processing it may be necessary to enter to pending substrate
Row pretreatment, or need to carry out post processing to substrate after Substrate treatment is complete.However, at existing substrate
Reason system is only capable of substrate is carried out a processing procedure, when need substrate is carried out pretreatment or post processing these
During extra process, need to take out through atmospheric environment substrate from a substrate handling system and then enter back into another
An outer substrate handling system.For example, in the etching technics of substrate, in etching intracavity, substrate is performed etching
Afterwards in addition it is also necessary to peel off the photoresist on substrate or mask layer.Using substrate handling system of the prior art just
Need the substrate after etching is sent in stripping system detached with etching system and peeled off.So, lead
Cause Substrate treatment less efficient, and then lead to semiconductor device production efficiency low.
Content of the invention
In view of this, the invention provides a kind of substrate handling system, to improve Substrate treatment efficiency, and then
Improve the production efficiency of semiconductor device.
In order to solve above-mentioned technical problem, present invention employs following technical scheme:
A kind of substrate handling system, including:Front equipment end module, the first vacuum lock, the first transmission cavity,
Two vacuum locks, the second transmission cavity, at least one first processing chamber and at least one second processing chamber;
Wherein, described first vacuum lock connects described front equipment end module and described first transmission cavity;
Described second vacuum lock connects described first transmission cavity and described second transmission cavity;
At least one first processing chamber described is connected with described second transmission cavity;Each described first processing chamber is equal
There is first port, described first port is used for passing between described first processing chamber and described second transmission cavity
Send substrate;
At least one second processing chamber described is connected with described first transmission cavity;Each described second processing chamber is equal
There is second port, described second port is used for passing between described second processing chamber and described first transmission cavity
Send substrate;
Described first transmission intracavity is provided with first mechanical arm, and described first mechanical arm is used for realizing substrate in institute
State the transmission between the first vacuum lock, described second vacuum lock and at least one second processing chamber described;
Described second transmission intracavity is provided with second mechanical arm, and described second mechanical arm is used for realizing substrate in institute
State the transmission between the second vacuum lock and at least one first processing chamber described.
Alternatively, described first vacuum lock includes mutually isolated Part I and Part II, and described first
Part is used for transmitting untreated substrate to described first transmission cavity, and described Part II is used for transmitting processed
Complete substrate.
Alternatively, described Part II has refrigerating function, the substrate that be placed on its inside can be carried out cold
But.
Alternatively, it is provided with three-mechanical arm in described Part II, described three-mechanical arm is used for being located
The substrate managed is sent to atmospheric environment.
Alternatively, described first processing chamber is that substrate is performed etching with the etching processing chamber of process;Described etching
Process intracavity includes the pedestal for fixing substrate, includes electrostatic chuck and reacting gas supplies above described pedestal
Answer device, described pedestal is connected with radio-frequency power supply.
Alternatively, described second processing chamber be substrate is carried out lift-off processing stripping chamber, described stripping
Chamber includes the heating pedestal and the plasma producing apparatus being located at top positioned at bottom, described plasma
Generating meanss make reacting gas form plasma and be downwardly towards the substrate in the heating pedestal of lower section.
Compared to prior art, the invention has the advantages that:
In the substrate handling system that the present invention provides, including the first processing chamber and second processing chamber, substrate is through the
After one mechanical arm is sent to the first processing chamber, here can carry out the first process, and substrate passes through second mechanical arm
After delivering to second processing chamber, here can carry out second processing.Therefore, the substrate that substrate provides in the present invention
In processing system, two different processing procedures can be carried out.For a substrate, this two differences
Processing procedure can based on processing procedure and aid in treatment process, wherein, aid in treatment include pretreatment or
Person's last handling process.So, the main process task to substrate and auxiliary can be completed using a substrate handling system
Help process.Therefore, the substrate handling system that the present invention provides improves the treatment effeciency of substrate, and then improves
The production efficiency of device.
In addition, the PROCESS FOR TREATMENT that second processing intracavity is carried out is complete by second mechanical arm with loading/unloading substrate
Become, therefore, the carrying out of the technical process of second processing intracavity can process the first of intracavity independent of first
Mechanical arm completes, thus, the substrate handling system that the present invention provides can also improve the handling capacity of whole system.
Brief description
In order to be expressly understood technical scheme, be described below the present invention specific embodiment when
The accompanying drawing used does a brief description.It should be evident that these accompanying drawings are only the section Example of the present invention,
Those of ordinary skill in the art's on the premise of not paying creative work, can also obtain other accompanying drawings.
Fig. 1 is the structural representation of substrate handling system of the prior art;
Fig. 2 is a kind of structural representation of substrate handling system provided in an embodiment of the present invention.
Specific embodiment
For making the purpose of the present invention, effect and technical scheme clearer, complete, right below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described.
Fig. 2 is the first structural representation of substrate handling system provided in an embodiment of the present invention.As Fig. 2 institute
Show, this substrate handling system includes:Front equipment end module 201, the first vacuum lock 202, the first transmission cavity
203rd, the second vacuum lock 204, the second transmission cavity 205, six first processing chamber 206a to 206f and two
Second processing chamber 207a and 207b;
Wherein, described first vacuum lock 202 connects described front equipment end module 201 and described first transmission cavity
203;
Described second vacuum lock 204 connects described first transmission cavity 203 and described second transmission cavity 205;
Each first processing chamber 206a to 206f is respectively connected with described second transmission cavity 205;
Each second processing chamber 207a and 207b is all connected with described first transmission cavity 203;
It is provided with first mechanical arm 208, described first mechanical arm 208 is used in described first transmission cavity 203
Realize substrate in described first vacuum lock 202, described second vacuum lock 204 and second processing chamber 207a
Transmission and 207b between;
It is provided with second mechanical arm 209, described second mechanical arm 209 is used in described second transmission cavity 205
Realize transmission between described second vacuum lock 204 and described first processing chamber 206a to 206f for the substrate.
In embodiments of the present invention, front equipment end module EFEM201 is in the industry cycle also referred to as front end (front
) or microenvironment end.Front equipment end module 201 is internal to be maintained under atmospheric pressure, is atmospheric environment, and first
Transmission cavity 203 and the second transmission cavity 205 inside are vacuum environment.
It should be noted that in embodiments of the present invention, the quantity of the first processing chamber is not limited to described above
6, it can be 1,2 or other number.The number of the first processing chamber in substrate handling system
Amount at least one, but, in order to increase the handling capacity of substrate handling system it is generally the case that at first
The quantity in reason chamber is multiple.In the same manner, the quantity in second processing chamber is also not necessarily limited to described above 2, and it can
Think 1 or other number.
In embodiments of the present invention, can using the first processing chamber as substrate main process task chamber, by second processing
Chamber is as the aid in treatment chamber of substrate.For example, the first processing chamber is etch chamber, and second processing chamber is to etching
The stripping chamber that substrate afterwards is peeled off.
When the first processing chamber is the etching processing chamber that substrate is performed etching with process, now the first process intracavity
Including the pedestal for fixing substrate, above described pedestal, include electrostatic chuck and reacting gas feeding mechanism,
It is connected with radio-frequency power supply on described pedestal.
When second processing chamber is the stripping chamber that substrate is carried out with lift-off processing, described second processing intracavity bag
Include the heating pedestal positioned at bottom and the plasma producing apparatus being located at top, described plasma fills
Put so that reacting gas forms plasma and is downwardly towards the substrate in the heating pedestal of lower section.
In order to completely cut off front equipment end module 201 and the first transmission cavity 203, the first vacuum lock 202 is provided with
First gate valve and the second gate valve (not shown), the first gate valve is communicated to front equipment end module 201, the
Two gate valves are communicated to the first transmission cavity 203, and this two gate valves will not be simultaneously open-minded.When the first gate valve is opened
When logical, in the first vacuum lock 202, maintain atmospheric environment, with front equipment end module in the first vacuum lock 202
Interior substrate can swap.When the second gate valve is opened, in the first vacuum lock 202, maintain vacuum ring
Border, can swap with the substrate in the first transmission cavity 203 in the first vacuum lock 202.
Due to the different processing procedure of the corresponding substrate of the first transmission cavity 203 and the second transmission cavity 205, so,
Both are possible to difference at internal vacuum environment.In order to completely cut off the environment in this two cavitys, the second vacuum lock
Two gate valves can also be provided with 204, in order to distinguish with the gate valve on the first vacuum lock 202, this reality
Apply example and two gate valves being arranged on the second vacuum lock 204 are referred to as the 3rd gate valve and the 4th gate valve.Its
In, the 3rd gate valve is communicated to the first transmission cavity 203, and the 4th gate valve is communicated to the second transmission cavity 205.When
The exchange of substrate when three gate valves are opened, can be carried out between the second vacuum lock 204 and the first transmission cavity 203,
The friendship of substrate when the 4th gate valve is opened, can be carried out between the second transmission cavity 205 and the second vacuum lock 204
Change.Similar with the gate valve on the first vacuum lock 202, the 3rd gate valve on the second vacuum lock 204 and the 4th
Valve also will not be opened simultaneously, a moment, only opens one of gate valve.So, the first transmission cavity
203 and second the air-flow of transmission cavity 205 be not communicated with, therefore, the environment in two chambers will not influence each other,
If the environment in the first transmission cavity 203 is dirtier, also will not pollute the environment in the second transmission cavity 205.
In addition, being respectively provided with first port 210a extremely on each first processing chamber 206a to 206f
210f, this first port 210a to 210f is connected with the second transmission cavity 205, by this first port 210a
The substrate that can realize to 210f between the first processing chamber and the second transmission cavity 205 exchanges.And at second
Also respectively it is provided with second port 211a and 211b, this second port 211a on reason chamber 207a to 207b
Connect with the first transmission cavity 203 with 211b, be used for realizing between the first transmission cavity 203 and the first processing chamber
Substrate exchange.It should be noted that each first processing chamber and the second transmission cavity share interconnect true
Altitude, each second processing chamber and the first transmission cavity share the vacuum environment interconnecting.
In embodiments of the present invention, can execute in second processing intracavity peel off as photoresist or mask layer, clear
The technique such as wash and be ashed.In order to realize this purpose, second processing chamber can include a plasma and apply dress
Put.It should be noted that in the embodiment of the present invention, any one first processing chamber or second processing intracavity are equal
Plasma bringing device can be included.Plasma bringing device can be inductive, capacitive, microwave
, it is designed to maintain plasma in the inter-process space in second processing chamber.On the contrary,
Plasma bringing device can be remote plasma source, keep in the cavity away from inter-process space etc.
Ion, but the living radical in plasma is sent to inter-process space.This plasma applies dress
Put and can be used to divest the photoresist mask on substrate.Additionally, second processing chamber can also include reaction gas
Body conveyer mechanism, such as gas spray or gas ejector.
Substrate transmission flow process between all parts of this substrate handling system is described below.
When substrate needs to carry out the first process and second processing successively, it is in each portion of substrate handling system
Transmission flow process between part is as follows:
First, substrate takes out in substrate box and is placed in front equipment end module 201.First vacuum lock 202
Interior maintenance atmospheric environment, opens the first gate valve of the first vacuum lock 202, keeps the first vacuum lock 202 simultaneously
Second gate valve close, substrate is sent in the first vacuum lock 202 in front equipment end module 201.
It is then shut off the first gate valve, control in the first vacuum lock 202 and maintain vacuum environment, open the first vacuum
Lock 202 the second gate valve and the 3rd gate valve of the second vacuum lock 204, are arranged in the first transmission cavity 203
Substrate is taken out in the first vacuum lock 202 by first mechanical arm 209, and this substrate is sent to the second vacuum
In lock 204.
Then, close the 3rd gate valve, open the 4th gate valve, be arranged on the second machine in the second transmission cavity 205
The substrate transfer being placed in the second vacuum lock 204 is taken office individual first processing chamber 206a one by one by tool arm 209
To 206f.Process intracavity first, the first process is carried out to substrate.After the completion for the treatment of the first process, the
Substrate after two mechanical arms 209 are processed first takes out and is sent to the second vacuum lock from the first process intracavity
In 204, then, the substrate after first mechanical arm 209 is processed first takes out in the second vacuum lock 204
And send it to second processing chamber 207a or 207b.In second processing intracavity, the base after processing to first
Piece carries out second processing, after the completion for the treatment of second processing, first mechanical arm 208 by the substrate after second processing from
Second processing intracavity takes out, and sends it in the first vacuum lock 202, then, first mechanical arm 208
Take out another new substrate in the first vacuum lock 202, start to carry out handling process to this new substrate.
When substrate only needs to carry out the first process, the substrate after the first process is sent to the second vacuum lock 204
Afterwards, the first vacuum lock 202 is transferred directly to by first mechanical arm 208, and needs not move through second processing chamber
207a or 207b.Then, it is sent to front equipment end module 201 from the first vacuum lock 202, finally deliver to
In atmospheric environment.
In embodiments of the present invention, the first processing chamber can be etch chamber, can be to being placed in this within the chamber
Its internal substrate performs etching process, and second processing chamber can be for peeling off chamber, can be to putting in this within the chamber
Put the photoresist on its internal substrate or mask layer carries out lift-off processing.Therefore, provided by the present invention
Substrate handling system, not only can realize the such as etching processing of the main process task to substrate, can also be to main process task after
Substrate carry out post processing as peel off.So, by substrate handling system provided in an embodiment of the present invention, when
After one substrate completes main process task, when carrying out post processing if necessary, avoid the need for being sent to this substrate again
Another has in the system of post-processing function, just can complete main place in a substrate handling system
Reason and this two processing procedures of post processing.
In addition, when substrate needs pretreatment, second processing chamber can be pretreatment chamber.Now, substrate exists
Circulation process between all parts of processing system is as follows:
Enter into the substrate in the first vacuum lock 202, be sent to second processing chamber through first mechanical arm 208,
In second processing intracavity, pretreatment is carried out to substrate, after the completion of pretreatment, substrate is taken by first mechanical arm 208
Go out, and send it in the second vacuum lock 204, then second mechanical arm 209 by substrate from the second vacuum
Take out in lock 204 and send it to the first process intracavity, in the first process intracavity, substrate is carried out at first
Reason, the substrate after the first process is sent to the second vacuum lock 204 through second mechanical arm, then again by the first machine
Tool arm 208 is sent to the first vacuum lock 202, finally spreads out of substrate handling system.
It is the first structure of substrate handling system provided in an embodiment of the present invention above.Compared to prior art
Middle need for substrate to be sent to the scheme carrying out different disposal in two different processing systems, the present invention provides
Substrate handling system can carry out main process task and aid in treatment process to substrate, this aid in treatment process includes
Pretreatment and/or last handling process, therefore, it is possible to improve Substrate treatment efficiency, are conducive to improving the life of device
Produce efficiency.
In addition, the PROCESS FOR TREATMENT that second processing intracavity is carried out is complete by second mechanical arm with loading/unloading substrate
Become, therefore, the carrying out of the technical process of second processing intracavity can process the first of intracavity independent of first
Mechanical arm completes, thus, the substrate handling system that the present invention provides can also improve the handling capacity of whole system.
In addition, in order to improve the handling capacity of substrate handling system further so that substrate enters Substrate treatment system
The path of system is different from the path leaving substrate handling system, improves the treatment effeciency of substrate handling system, this
Inventive embodiments additionally provide the second structure of substrate handling system.
The second structure of this substrate handling system, compared with the first structure, differs only in, the first vacuum
Lock 202 is not an overall connectivity structure, and it is divided into mutually isolated Part I and second by dividing plate
Point.In a kind of example, wherein Part I is only used to transmit new substrate to the first transmission cavity 203,
And Part II is only used to the complete substrate of transmission process and leaves the first vacuum lock 202 and be sent to equipment
Front end module 201.The substrate having processed refers to be processed the substrate that completed or by the by the first processing chamber
The substrate that two processing chambers have been processed.Three-mechanical arm can be provided with the second portion, described 3rd machinery
Arm is used for for processed substrate being sent to atmospheric environment.
In addition, when substrate is processed, typically can be using higher temperature.Base after therefore just having processed
Piece temperature is higher, if directly substrate higher for temperature is sent in atmospheric environment, substrate surface will be with
Gas in air reacts, and reduces the performance of substrate.In order to avoid this problem, implement in the present invention
In example, in order to cool down to the substrate having processed, the Part II of the first vacuum lock 202 has cold
But function, it can cool down to being placed on its internal substrate.
It should be noted that as an example, the Part I of the first vacuum lock 202 can be the first vacuum lock
202 top section, the Part II of the first vacuum lock 202 can be the base portion of the first vacuum lock 202
Point.
The above is only the preferred embodiment of the present invention it is noted that common for the art
For technical staff, under the premise without departing from the principles of the invention, some improvements and modifications can also be made,
These improvements and modifications also should be regarded as protection scope of the present invention.
Claims (6)
1. a kind of substrate handling system is it is characterised in that include:Front equipment end module, the first vacuum lock,
First transmission cavity, the second vacuum lock, the second transmission cavity, at least one first processing chamber and at least one second
Processing chamber;
Wherein, described first vacuum lock connects described front equipment end module and described first transmission cavity;
Described second vacuum lock connects described first transmission cavity and described second transmission cavity;
At least one first processing chamber described is connected with described second transmission cavity;Each described first processing chamber is equal
There is first port, described first port is used for passing between described first processing chamber and described second transmission cavity
Send substrate;
At least one second processing chamber described is connected with described first transmission cavity;Each described second processing chamber is equal
There is second port, described second port is used for passing between described second processing chamber and described first transmission cavity
Send substrate;
Described first transmission intracavity is provided with first mechanical arm, and described first mechanical arm is used for realizing substrate in institute
State the transmission between the first vacuum lock, described second vacuum lock and at least one second processing chamber described;
Described second transmission intracavity is provided with second mechanical arm, and described second mechanical arm is used for realizing substrate in institute
State the transmission between the second vacuum lock and at least one first processing chamber described.
2. system according to claim 1 is it is characterised in that described first vacuum lock includes mutually
The Part I of isolation and Part II, described Part I is used for transmitting untreated substrate to described first
Transmission cavity, described Part II is used for transmitting processed substrate.
3. system according to claim 2 is it is characterised in that described Part II has cooling work(
Can, can cool down to being placed on its internal substrate.
4. method according to claim 2 is it is characterised in that be provided with described Part II
Three-mechanical arm, described three-mechanical arm is used for for processed substrate being sent to atmospheric environment.
5. the system according to any one of claim 1-4 is it is characterised in that described first processing chamber
It is the etching processing chamber that substrate is performed etching with process;Described etching processing intracavity is included for fixing substrate
Pedestal, includes electrostatic chuck and reacting gas feeding mechanism above described pedestal, described pedestal is connected with and penetrates
Frequency power.
6. system according to claim 5 is it is characterised in that described second processing chamber is to substrate
Carry out lift-off processing stripping chamber, described stripping chamber includes heating pedestal positioned at bottom and is located at top
The plasma producing apparatus in portion, described plasma producing apparatus make reacting gas form plasma simultaneously
It is downwardly towards the substrate in the heating pedestal of lower section.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201510489586.7A CN106449466A (en) | 2015-08-11 | 2015-08-11 | Substrate processing system |
TW105117287A TWI601230B (en) | 2015-08-11 | 2016-06-01 | Substrate processing system |
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CN201510489586.7A CN106449466A (en) | 2015-08-11 | 2015-08-11 | Substrate processing system |
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CN201510489586.7A Pending CN106449466A (en) | 2015-08-11 | 2015-08-11 | Substrate processing system |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109994358A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of operation method of plasma handling system and plasma handling system |
Families Citing this family (1)
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CN112530830A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Substrate processing system, valve plate assembly and working method of substrate processing system |
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JP4925650B2 (en) * | 2005-11-28 | 2012-05-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
US9685186B2 (en) * | 2009-02-27 | 2017-06-20 | Applied Materials, Inc. | HDD pattern implant system |
JP5785712B2 (en) * | 2010-12-28 | 2015-09-30 | 株式会社日立ハイテクノロジーズ | Vacuum processing equipment |
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US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
WO2004048048A1 (en) * | 2002-11-27 | 2004-06-10 | Tokyo Electron Limited | Delivery position-aligning method for transportation system |
US20090191030A1 (en) * | 2006-09-19 | 2009-07-30 | Intevac, Inc. | Apparatus and methods for transporting and processing substrates |
KR20120015987A (en) * | 2010-08-12 | 2012-02-22 | 삼성전자주식회사 | System for treating substrates |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109994358A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of operation method of plasma handling system and plasma handling system |
CN109994358B (en) * | 2017-12-29 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | Plasma processing system and operation method thereof |
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TW201707110A (en) | 2017-02-16 |
TWI601230B (en) | 2017-10-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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