CN102992327A - Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting - Google Patents
Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting Download PDFInfo
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- CN102992327A CN102992327A CN2012105445905A CN201210544590A CN102992327A CN 102992327 A CN102992327 A CN 102992327A CN 2012105445905 A CN2012105445905 A CN 2012105445905A CN 201210544590 A CN201210544590 A CN 201210544590A CN 102992327 A CN102992327 A CN 102992327A
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Abstract
The invention belongs to the technical field of physical metallurgy technological purification, and in particular relates to a method and equipment for purifying polycrystalline silicon through electron beam melting. A high-phosphorus silicon material is molten through electron beams under the vacuum condition to obtain low-phosphorous molten silicon, and the low-phosphorous molten silicon is poured into a solidification crucible to be solidified; the processes of charging, smelting and purifying and pouring are repeated until the solidification crucible is fully loaded; another hollow solidification crucible is rotated below a molten liquid pouring port, and the processes of charging, smelting and purifying and pouring are repeated until the solidification crucible is fully loaded; and the processes of fully charging one solidification crucible and rotating another hollow solidification crucible below the molten silicon pouring port are repeated until all the solidification crucibles are fully loaded, and after the low-phosphorous molten silicon in all the solidification crucibles is solidified, ingots are taken out. By the method, the whole purifying time of a plurality of times of smelting is reduced, and the times for vacuumizing and preheating of electron guns are reduced, so that the production efficiency is increased; and the equipment is compact in structure, is easy to operate, is safe and controllable and has high production efficiency.
Description
Technical field
The invention belongs to the technical field with physical metallurgy technology purifying polycrystalline silicon, particularly a kind of method of electron beam melting purifying polycrystalline silicon also relates to its equipment in addition.
Background technology
Solar grade polycrystalline silicon material is topmost photovoltaic material, it is applied to solar cell, can convert solar energy into electrical energy, in conventional energy resources today in short supply, sun power has huge using value, and in recent years, the global solar photovoltaic industry increases rapidly, solar cell yield increases fast, direct pull the rapid expansion of polysilicon demand.But the manufacturing cost that solar grade polycrystalline silicon material is high and complicated manufacturing process are the bottlenecks of restriction photovoltaic industry great development, have seriously hindered popularization and the use of China's solar cell.China can autonomous production the not enough demand of solar-grade polysilicon 5%, overwhelming majority starting material need import, the solar-grade polysilicon technology of preparing of the suitable China's national situation of exploitation meets the requirement of national energy strategy, is the only way of China's photovoltaic industry great development.
For this reason, countries in the world all have the new process of preparation HIGH-PURITY SILICON material with short production cycle, that pollution is little, cost is low, technique is relatively simple, scale is controlled at active development, and metallurgy method is owing to possess above advantage, be considered to effectively to reduce one of technology of production of polysilicon cost, become the focus that competitively research and develop countries in the world at present.The electron beam melting technology is that metallurgy method prepares one of method important in the solar-grade polysilicon, it is to utilize the electron beam of high-energy-density as the processing method of melting thermal source, general electron beam melting method is after forming the molten bath by fusing buik silicon material, under the high temperature that electron beam produces, utilize the surface evaporation effect, effectively remove higher impurity such as the phosphorus of saturated vapor pressure, aluminium etc., yet, electron beam purifying polycrystalline silicon in the finding archives patent generally is after finishing melting once, ingot casting after will solidifying takes out, and carries out next time melting again, must repeat like this to extract vacuum and the electron beam gun preheating of chamber, this has not only increased the repeatedly time of melting, and strengthened energy consumption, such as electric power, equipment losses etc. cause production efficiency to reduce, in the simultaneously former electron beam melting polysilicon process, can not realize continuous charging and continuous discharge, increase production cost, be unfavorable for suitability for industrialized production.
Summary of the invention
The present invention is for overcoming above-mentioned not enough problem, a kind of method of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying is proposed, the silicon liquid that comes the splendid attire melting to finish with a plurality of solidification crucibles, the molten silicon liquid of front primary purification is being cooled off in the fusion process next time continuously, having reduced repeatedly the integral body of melting purifies the time, reduced the number of times that vacuumizes with the electron beam gun preheating, improved production efficiency, another object of the present invention provides the equipment of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying, compact construction, easy handling, safety is controlled, and production efficiency is high.
The technical scheme that the present invention adopts for achieving the above object is: a kind of method of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying, it is characterized in that: under vacuum condition, use first electron beam that the high phosphorus silicon material in the smelting pot is heated to and be fused into silicon melt fully, lasting melting makes in the silicon melt volatile impunty fully volatilize and obtains low-phosphorous silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until all solidification crucibles are filled, take out after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, obtain low-phosphorous polycrystalline silicon ingot casting.
Concrete steps are as follows:
The first step is got the raw materials ready, pre-treatment: at first utilize feeding belt that the high phosphorus silicon material in the charging box is delivered in the smelting pot, fill 90 ~ 95% of smelting pot volume to the silicon material, open the vacuum pump group, vacuum tightness in the chamber is evacuated to 5 * 10
-2Below the Pa; Pre-thermionic electron guns, it is 30-32kV that high pressure is set, and after high pressure is stablized 5-10min, closes high pressure, it is 100-200mA that the electron beam gun line is set, and carries out preheating, behind the preheating 10-15min, closes the electron beam gun line;
The second step melting is purified: open simultaneously high pressure and the line of electron beam gun, after voltage, current stabilization, make electron beam gun with the high phosphorus silicon material on the line bombardment smelting pot of 200-700mA, form stable silicon molten bath; Then, regulate electron beam gun line size, make line maintain 300-1200mA, continue melting 30-120min, volatile impunty fully volatilizees and obtains low-phosphorous silicon melt in the silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until all solidification crucibles are filled;
The 3rd step was got ingot: stop chamber being vacuumized after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, open the purging valve venting, take out ingot casting, obtain low-phosphorous polycrystalline silicon ingot casting.
The content of phosphorus is 10-80ppmw in the described high phosphorus silicon material.
The content of phosphorus is lower than 0.4ppmw in the described low-phosphorous polycrystalline silicon ingot casting.
The equipment that a kind of method of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying adopts, consist of chamber integral body by upper chamber and lower chambers, upper chamber is fixedly installed on the surface based body support frame, the upper chamber top is equipped with electron beam gun, the vacuum pump group communicates with upper chamber by vacuum-lines, it is characterized in that: be movably installed with smelting pot by tripod on the described upper chamber base plate, slide mechanism is installed on smelting pot one side by transmission rod, be installed with charging box on upper chamber's sidewall, feeding belt is fixedly installed on the charging box, the feeding belt feeding port is positioned at directly over the smelting pot, lower chambers is movably installed on the supporting leg by guide rail mechanism, and be positioned under the upper chamber, be installed with rotating mechanism on the lower chambers base plate, universal stage is fixedly installed on the rotating mechanism, shores platform and is movably installed on the universal stage, solidification crucible places to be shored on the platform, all offers silicon liquid pour spout on upper chamber's base plate and the lower chambers top board.
Described electron beam gun has 1 at least.
The described platform of shoring has 2 at least.
Adopt vacuum-sealing to connect between described upper chamber and the lower chambers.
Unusual effect of the present invention is the melting mode of taking the solidification crucible rotation, pour into solidification crucible after first melt is melted, then feed in raw material and carry out again melting, rotate universal stage after filling a solidification crucible, make another solidification crucible place the smelting pot below, wait for next time splendid attire melt, utilize like this and change solidification crucible, the molten silicon liquid of front primary purification is being cooled off in the fusion process next time continuously, reduce the number of times that vacuumizes with the electron beam gun preheating, reduced the repeatedly purification time of the integral body of melting, improved production efficiency, the silicon material can utilize the residual heat of smelting pot to heat simultaneously, saved dissipation of energy, used continuous feeding, made the silicon material have control ground to add, increased reinforced stability, can finish continuous smelting, energy consumption is little, and cost is low, production efficiency is high, is fit to large-scale industrial production.
Present device adopts installs a smelting pot and rotatable a plurality of solidification crucibles of changing, and compact construction is realized repeatedly continuous discharging, reduces the time that melting is purified, and the feeding device of installation can be realized continuous charging, enhances productivity.
Description of drawings
Fig. 1 is a kind of device structure synoptic diagram of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying
Fig. 2 is universal stage vertical view among Fig. 1
Wherein: 1, electron beam gun, 2, the vacuum pump group, 3, electron beam, 4, low-phosphorous silicon melt, 5, smelting pot, 6, tripod, 7, upper chamber, 8, lower chambers, 9, solidification crucible, 10, universal stage, 11, shore platform, 12, rotating mechanism, 13, guide rail mechanism, 14, supporting leg, 15, slide mechanism, 16, transmission rod, 17, charging box, 18, feeding belt
Embodiment
Describe the present invention in detail below in conjunction with specific embodiments and the drawings, but the present invention is not limited to specific embodiment.
Embodiment 1
The equipment that the method for a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying as depicted in figs. 1 and 2 adopts, consist of chamber integral body by upper chamber 7 and lower chambers 8, upper chamber 7 is fixedly installed on the surface based body support frame, the upper chamber top is equipped with 2 electron beam gun 1, vacuum pump group 2 communicates with upper chamber 7 by vacuum-lines, vacuum pump group 2 comprises mechanical pump, lobe pump and diffusion pump, and vacuumometer is installed on the vacuum-lines.
Be movably installed with smelting pot 5 by tripod 6 on upper chamber's 7 base plates, slide mechanism 15 is installed on smelting pot one side by transmission rod 16, be installed with charging box 17 on upper chamber's 7 sidewalls, feeding belt 18 is fixedly installed on the charging box 17, feeding belt 18 feeding ports are positioned at directly over the smelting pot, lower chambers 8 is movably installed on the supporting leg 14 by guide rail mechanism 13, and be positioned under the upper chamber, be installed with rotating mechanism 12 on lower chambers 8 base plates, universal stage 10 is fixedly installed on the rotating mechanism 12, shoring platform 11 is movably installed on the universal stage, solidification crucible 9 places to be shored on the platform 11, shore platform and be provided with 6, and each shores solidification crucible of installation on the platform, all offer silicon liquid pour spout on upper chamber's base plate and the lower chambers top board, adopt vacuum-sealing to connect between described upper chamber 7 and the lower chambers 8.
During use, driving transmission rod 16 by slide mechanism 15 moves, make smelting pot 5 be positioned at level attitude, by feeding belt 18 the high phosphorus silicon material in the charging box is sent in the smelting pot 5, opening guide rail mechanism 13 rises to upper chamber vacuum-sealing lower chambers 8 to be connected, opening the vacuum pump group begins upper chamber and lower chambers extracting vacuum, after vacuum reaches requirement, the unlocking electronic bundle is aimed at high phosphorus silicon material and is carried out melting, melting for some time purifies the silicon material and obtains low-phosphorous silicon melt, driving transmission rod 16 by slide mechanism 15 moves, make smelting pot 5 begin to tilt, low-phosphorous silicon melt pours in the solidification crucible by silicon liquid pour spout, repeat above-mentioned reinforced, melting and the operation of toppling over, fill to a solidification crucible, opening rotating mechanism rotates universal stage, rotate another solidification crucible to silicon liquid pour spout below, repeat above-mentioned reinforced, melting and the operation of toppling over, fill to this solidification crucible, repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until all solidification crucibles are filled, stop reinforced and melting, close electron beam gun, keep vacuum to silicon liquid to solidify and cool off, stop to vacuumize, open the purging valve venting, open guide rail mechanism 13 lower chambers 8 is descended, unlatching is shored platform solidification crucible is ejected, utilize anchor clamps to take out solidification crucible, take out the polycrystalline silicon ingot casting that obtains low boron.
Embodiment 2
Utilize embodiment 1 described electron-beam melting system to come smelting polycrystalline silicon purifying, concrete steps are as follows:
The first step is got the raw materials ready, pre-treatment: at first utilize feeding belt that the phosphorus content in the charging box is delivered in the smelting pot for 10ppmw high phosphorus silicon material, fill 95% of smelting pot volume to the silicon material, open the vacuum pump group, vacuum tightness in the chamber is evacuated to 5 * 10
-2Pa; Pre-thermionic electron guns, it is 30kV that high pressure is set, and after high pressure is stablized 10min, closes high pressure, it is 200mA that the electron beam gun line is set, and carries out preheating, behind the preheating 10min, closes the electron beam gun line;
The second step melting is purified: open simultaneously high pressure and the line of electron beam gun, after voltage, current stabilization, make electron beam gun with the high phosphorus silicon material on the line bombardment smelting pot of 200mA, form stable silicon molten bath; Then, regulate electron beam gun line size, make line maintain 300mA, continue melting 120min, volatile impunty fully volatilizees and obtains low-phosphorous silicon melt in the silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until 6 solidification crucibles are all filled;
The 3rd step was got ingot: stops chamber being vacuumized after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, opens the purging valve venting, take out ingot casting, obtain low-phosphorous polycrystalline silicon ingot casting, after testing, the content 0.38ppmw of phosphorus in the low-phosphorous polycrystalline silicon ingot casting.
Embodiment 3
Utilize embodiment 1 described electron-beam melting system to come smelting polycrystalline silicon purifying, concrete steps are as follows:
The first step is got the raw materials ready, pre-treatment: at first utilize feeding belt that the phosphorus content in the charging box is delivered in the smelting pot for 34ppmw high phosphorus silicon material, fill 92% of smelting pot volume to the silicon material, open the vacuum pump group, vacuum tightness in the chamber is evacuated to 3 * 10
-2Pa; Pre-thermionic electron guns, it is 31kV that high pressure is set, and after high pressure is stablized 8min, closes high pressure, it is 150mA that the electron beam gun line is set, and carries out preheating, behind the preheating 12min, closes the electron beam gun line;
The second step melting is purified: open simultaneously high pressure and the line of electron beam gun, after voltage, current stabilization, make electron beam gun with the high phosphorus silicon material on the line bombardment smelting pot of 500mA, form stable silicon molten bath; Then, regulate electron beam gun line size, make line maintain 600mA, continue melting 90min, volatile impunty fully volatilizees and obtains low-phosphorous silicon melt in the silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until 6 solidification crucibles are all filled;
The 3rd step was got ingot: stops chamber being vacuumized after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, opens the purging valve venting, take out ingot casting, obtain low-phosphorous polycrystalline silicon ingot casting, after testing, the content 0.32ppmw of phosphorus in the low-phosphorous polycrystalline silicon ingot casting.
Embodiment 4
Utilize embodiment 1 described electron-beam melting system to come smelting polycrystalline silicon purifying, concrete steps are as follows:
The first step is got the raw materials ready, pre-treatment: at first utilize feeding belt that the phosphorus content in the charging box is delivered in the smelting pot for 80ppmw high phosphorus silicon material, fill 90% of smelting pot volume to the silicon material, open the vacuum pump group, vacuum tightness in the chamber is evacuated to 2 * 10
-2Pa; Pre-thermionic electron guns, it is 32kV that high pressure is set, and after high pressure is stablized 5min, closes high pressure, it is 100mA that the electron beam gun line is set, and carries out preheating, behind the preheating 15min, closes the electron beam gun line;
The second step melting is purified: open simultaneously high pressure and the line of electron beam gun, after voltage, current stabilization, make electron beam gun with the high phosphorus silicon material on the line bombardment smelting pot of 700mA, form stable silicon molten bath; Then, regulate electron beam gun line size, make line maintain 1200mA, continue melting 30min, volatile impunty fully volatilizees and obtains low-phosphorous silicon melt in the silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until 6 solidification crucibles are all filled;
The 3rd step was got ingot: stops chamber being vacuumized after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, opens the purging valve venting, take out ingot casting, obtain low-phosphorous polycrystalline silicon ingot casting, after testing, the content 0.34ppmw of phosphorus in the low-phosphorous polycrystalline silicon ingot casting.
Claims (8)
1. the method for a solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying, it is characterized in that: under vacuum condition, use first electron beam that the high phosphorus silicon material in the smelting pot is heated to and be fused into silicon melt fully, lasting melting makes in the silicon melt volatile impunty fully volatilize and obtains low-phosphorous silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until all solidification crucibles are filled, take out after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, obtain low-phosphorous polycrystalline silicon ingot casting.
2. the method for a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 1, it is characterized in that: concrete steps are as follows:
The first step is got the raw materials ready, pre-treatment: at first utilize feeding belt that the high phosphorus silicon material in the charging box is delivered in the smelting pot, fill 90 ~ 95% of smelting pot volume to the silicon material, open the vacuum pump group, vacuum tightness in the chamber is evacuated to 5 * 10
-2Below the Pa; Pre-thermionic electron guns, it is 30-32kV that high pressure is set, and after high pressure is stablized 5-10min, closes high pressure, it is 100-200mA that the electron beam gun line is set, and carries out preheating, behind the preheating 10-15min, closes the electron beam gun line;
The second step melting is purified: open simultaneously high pressure and the line of electron beam gun, after voltage, current stabilization, make electron beam gun with the high phosphorus silicon material on the line bombardment smelting pot of 200-700mA, form stable silicon molten bath; Then, regulate electron beam gun line size, make line maintain 300-1200mA, continue melting 30-120min, volatile impunty fully volatilizees and obtains low-phosphorous silicon melt in the silicon melt, low-phosphorous silicon melt is poured in the solidification crucible by silicon liquid inlet orifice solidify afterwards; Topple over and smelting pot is restored after complete, in smelting pot, add high phosphorus silicon material, use the high phosphorus silicon material in the electron beam melting purification smelting pot, purify low-phosphorous silicon melt to be poured in the solidification crucible after finishing until melting and solidify, the operation that repeats above-mentioned charging, melting purification and topple over is until solidification crucible is filled; The solidification crucible that another is empty rotates to silicon liquid inlet orifice below, and the operation that repeats above-mentioned charging, melting purification and topple over is until this solidification crucible is filled; Repeat above-mentioned solidification crucible and the operation of another empty solidification crucible of rotation to silicon liquid inlet orifice below filled, until all solidification crucibles are filled;
The 3rd step was got ingot: stop chamber being vacuumized after low-phosphorous silicon melt is frozen into ingot casting in all solidification crucibles, open the purging valve venting, take out ingot casting, obtain low-phosphorous polycrystalline silicon ingot casting.
3. the method for arbitrary described a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 1 and 2, it is characterized in that: the content of phosphorus is 10-80ppmw in the described high phosphorus silicon material.
4. the method for arbitrary described a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 1 and 2, it is characterized in that: the content of phosphorus is lower than 0.4ppmw in the described low-phosphorous polycrystalline silicon ingot casting.
5. the equipment that adopts of the method for a solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying, it is whole to consist of chamber by upper chamber (7) and lower chambers (8), upper chamber (7) is fixedly installed on the surface based body support frame, the upper chamber top is equipped with electron beam gun (1), vacuum pump group (2) communicates with upper chamber (7) by vacuum-lines, it is characterized in that: be movably installed with smelting pot (5) by tripod (6) on described upper chamber (7) base plate, slide mechanism (15) is installed on smelting pot one side by transmission rod (16), be installed with charging box (17) on upper chamber (7) sidewall, feeding belt (18) is fixedly installed on the charging box (17), feeding belt (18) feeding port is positioned at directly over the smelting pot, lower chambers (8) is movably installed on the supporting leg (14) by guide rail mechanism (13), and be positioned under the upper chamber, be installed with rotating mechanism (12) on lower chambers (8) base plate, universal stage (10) is fixedly installed on the rotating mechanism (12), shoring platform (11) is movably installed on the universal stage, solidification crucible (9) places to be shored on the platform (11), offers silicon liquid pour spout on upper chamber's base plate and the lower chambers top board correspondence position.
6. the equipment that adopts of the method for a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 5, it is characterized in that: described electron beam gun (1) has 1 at least.
7. the equipment that adopts of the method for a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 5, it is characterized in that: the described platform (11) of shoring has 2 at least.
8. the equipment that adopts of the method for a kind of solidification crucible rotary electronic bundle smelting polycrystalline silicon purifying according to claim 5 is characterized in that: adopt vacuum-sealing to connect between described upper chamber (7) and the lower chambers (8).
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| CN103741210A (en) * | 2013-11-22 | 2014-04-23 | 青岛隆盛晶硅科技有限公司 | Method and device for electron beam melting to remove oxygen from polysilicon and continuous ingot casting |
| CN104649274A (en) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | Method for removing oxygen impurities in polysilicon through electron beam continuous melting, and apparatus thereof |
| CN104649275A (en) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | Method for removing oxygen from silicon material by electron beam low frequency bombardment |
| CN103741210B (en) * | 2013-11-22 | 2016-08-17 | 青岛隆盛晶硅科技有限公司 | A kind of electronic torch melting polysilicon deoxygenation and the method and apparatus of continuous casting |
| CN104532340A (en) * | 2014-12-24 | 2015-04-22 | 大连理工大学 | Device and method for electron beam melting and single-crystal lifting coupling |
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| CN108101064B (en) * | 2017-12-23 | 2021-02-09 | 青岛蓝光晶科新材料有限公司 | Method for separating hard impurities in silicon by temperature gradient |
| CN108557825A (en) * | 2018-01-30 | 2018-09-21 | 青岛蓝光晶科新材料有限公司 | A kind of method that low cost removes carbon, nitrogen impurity in polysilicon |
| CN108557825B (en) * | 2018-01-30 | 2021-02-09 | 青岛蓝光晶科新材料有限公司 | Method for removing carbon and nitrogen impurities in polycrystalline silicon at low cost |
| CN108456919A (en) * | 2018-03-12 | 2018-08-28 | 福能科技江苏有限公司 | A kind of casting method of G8 polycrystal silicon ingots |
| CN108946739A (en) * | 2018-10-16 | 2018-12-07 | 青岛蓝光晶科新材料有限公司 | A kind of silicon materials process for effectively purifying and device |
| CN108946739B (en) * | 2018-10-16 | 2023-09-19 | 青岛蓝光晶科新材料有限公司 | Efficient purification method and device for silicon material |
| CN114574962A (en) * | 2022-02-15 | 2022-06-03 | 浙江晶阳机电股份有限公司 | Be applied to reinforced structure of continuous type of jumbo size silicon core ingot furnace |
| CN114574962B (en) * | 2022-02-15 | 2023-02-03 | 浙江晶阳机电股份有限公司 | Be applied to reinforced structure of continuous type of jumbo size silicon core ingot furnace |
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