CN102931306A - Light emitting diode epitaxial wafer - Google Patents
Light emitting diode epitaxial wafer Download PDFInfo
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- CN102931306A CN102931306A CN2012104381817A CN201210438181A CN102931306A CN 102931306 A CN102931306 A CN 102931306A CN 2012104381817 A CN2012104381817 A CN 2012104381817A CN 201210438181 A CN201210438181 A CN 201210438181A CN 102931306 A CN102931306 A CN 102931306A
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Abstract
The invention discloses a light emitting diode epitaxial wafer. The epitaxial wafer comprises a substrate, a first semiconductor layer, an active layer, an electron blocking layer and a second semiconductor layer, the first semiconductor layer, the active layer, the electron blocking layer and the second semiconductor layer are sequentially covered on the substrate, the first semiconductor layer comprises an N type gallium nitride (GaN) layer, the second semiconductor layer comprises a P type GaN layer, and the electron blocking layer is a single-layer P-InxAlyGal-x-yN (0<=X1, 0<Y<1) or P-InxAlyGal-x-yN/P-GaN (0<=X<1, 0<Y<1) superlattice. According to the light emitting diode epitaxial wafer, the content of Al in the electron blocking layer is extremely small when the electron blocking layer approaches to the active layer, thereby the lattice mismatch is reduced, and unnecessary composite phenomenon of electron and hole is avoided; and when the electron blocking layer approaches to the P type layer, the barrier height is gradually reduced, the difficulty of hole injection is reduced, thereby the composite efficiency of electron and hole is improved, and the luminous efficiency of the light emitting diode is improved.
Description
Technical field
The present invention relates to the led technology field, particularly a kind of LED epitaxial slice.
Background technology
LED(Light Emitting Diode, light-emitting diode) be a kind of can be the semiconductor device of luminous energy with electric energy conversion.Usually, LED mainly is comprised of support, elargol, chip, gold thread and epoxy resin.
Wherein, chip is the core component of LED, and it is to be processed through multiple working procedure by epitaxial wafer.Therefore, the structures shape of epitaxial wafer the quality of LED.Epitaxial wafer is mainly by substrate, N(Negative, and is electronegative) type layer, active layer and P(Positive, positively charged) type layer etc. partly forms.When the function of current in chip the time, it is compound that the hole in the electronics in the N-type layer and the P type layer is pushed to active layer, then will send energy with the form of photon.
Although the develop rapidly of LED and application have obtained the approval of industry fully, equally also are faced with a lot of problems.For example, when LED was in running order, a large amount of electrons overflowed from active layer, so that luminous efficiency reduces greatly.In order to reduce overflowing of electronics, the normal method that adopts is after the active layer of having grown at present, regrowth one deck P-AlGaN(P type aluminum gallium nitride) electronic barrier layer, wherein the component of Al is certain, forms the potential barrier of a rectangle.
In realizing process of the present invention, the inventor finds that there is following problem at least in prior art:
The composition of Al is fixed in the electronic barrier layer, and is different from the material of the active layer that does not contain Al, can cause lattice mismatch, and then unnecessary electronics and hole-recombination occur; And in the place near P type layer, because the existence of potential barrier, it is very difficult that the injection in hole also becomes.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the invention provides a kind of LED epitaxial slice.Described technical scheme is as follows:
The embodiment of the invention provides a kind of LED epitaxial slice, described epitaxial wafer comprises substrate, covers the first semiconductor layer on the described substrate, active layer, electronic barrier layer and the second semiconductor layer successively, described the first semiconductor layer comprises N-type GaN layer, described the second semiconductor layer comprises P type GaN layer, and described electronic barrier layer is the P-In of individual layer
xAl
yGa
1-x-yN(0≤X＜1,0＜Y＜1) or P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) superlattice, along with the rising of electronic blocking layer thickness, the P-In of individual layer
xAl
yGa
1-x-yThe component of Al raise first rear reduction or the rear reduction that remains unchanged again that raises first among the N, P-In
xAl
yGa
1-x-yThe component of Al raise first rear reduction or the rear reduction that remains unchanged again that raises first between adjacent two cycles in the N/P-GaN superlattice.
Preferably, 0≤x＜0.1,1＜y＜0.2.
Further, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe component of Al remains unchanged among the N.
Further, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe component of Al raises or gradually reduction gradually among the N.
Further, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, when the component of Al reaches the highest, within some cycles, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe Al component keeps the highest constant among the N.
Further, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, the thickness of the superlattice in each cycle is identical.
Further, described P-In
xAl
yGa
1-x-yThe thickness in each cycle of N/P-GaN superlattice is different, and from described active layer one side to described the second semiconductor layer one side, the thickness of single Periodic Superlattice is from being thinned to thick again attenuation.
Further, described P-In
xAl
yGa
1-x-yThe thickness in each cycle of N/P-GaN superlattice is different, and from described active layer one side to described the second semiconductor layer one side, the thickness of single Periodic Superlattice is thickening or gradually attenuation gradually.
Further, the thickness of described electronic barrier layer is no more than 100nm.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is:
Composition by Al in the electronic barrier layer near active layer the time is very little, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the LED epitaxial slice structure schematic diagram that the embodiment of the invention one provides;
Fig. 2 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention one;
Fig. 3 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention two;
Fig. 4 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention three;
Fig. 5 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention three;
Fig. 6 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention three;
Fig. 7 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention four;
Fig. 8 is the conduction band schematic diagram of the electronic barrier layer that provides of the embodiment of the invention five.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Embodiment one
The embodiment of the invention provides a kind of LED epitaxial wafer, and referring to Fig. 1, this LED epitaxial wafer comprises substrate 1, covers the first semiconductor layer 2 on the substrate 1, active layer 3, electronic barrier layer 4 and the second semiconductor layer 5 successively.The first semiconductor layer 2 comprises N-type GaN layer, and the second semiconductor layer 5 comprises P type GaN layer.
Wherein, substrate 1 includes but not limited to Sapphire Substrate.The first semiconductor layer 2 and the second semiconductor layer 5 all can be sandwich construction.
Referring to Fig. 2, electronic barrier layer 4 is the P-In of individual layer
xAl
yGa
1-x-yN(0≤X＜1,0＜Y＜1); Along with the rising of electronic blocking layer thickness, the component of Al reduces for raising first again; At this moment, the potential barrier of electronic barrier layer is triangle, and triangular barrier can be symmetrical, also can be asymmetric.
Preferably, 0≤x＜0.1,1＜y＜0.2.
Preferably, the thickness of electronic barrier layer 4 is no more than 100nm.
Further, the doping content of Mg is not less than 10 in the P type
18/ cm
3
Epitaxial wafer provided by the invention adopts the MOCVD method, utilizes high-purity N H
3Nitrogen-atoms is provided, and trimethyl gallium and triethyl-gallium are as the gallium source, and trimethyl indium is as the indium source, and trimethyl aluminium is as the aluminium source, and silane is used as N-shaped and mixes, and two luxuriant magnesium are used as p-type and mix.Successively growth regulation semi-conductor layer 2, active layer 3, electronic barrier layer 4, the second semiconductor layer 5 on Sapphire Substrate 1.
When LED works, since high in the middle of the potential barrier, can prevent overflowing of electronics.And simultaneously, the composition of Al is very little in the electronic barrier layer near active layer the time, thereby has reduced lattice mismatch, has avoided unnecessary compound in electronics and hole; On the other hand, from P type layer to electronic barrier layer, the height of potential barrier raises gradually, has reduced the difficulty of hole by potential barrier, has improved the injection in hole, has improved the combined efficiency in electronics and hole.Thereby improved the luminous efficiency of LED.
The embodiment of the invention is very little by the composition of Al in the electronic barrier layer near active layer the time, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.The LED epitaxial wafer that embodiment one provides is under optimal condition, but improving luminous efficiency 12%.
Embodiment two
The embodiment of the invention provides a kind of LED epitaxial wafer, and referring to Fig. 3, the structure of the epitaxial wafer that this epitaxial wafer and embodiment one provide is basic identical, and difference is that electronic barrier layer is the P-In of individual layer
xAl
yGa
1-x-yN(0≤X＜1,0＜Y＜1), along with the rising of electronic blocking layer thickness, the component of Al is the rear reduction that remains unchanged again that raises first; At this moment, the potential barrier of electronic barrier layer is trapezium structure, and trapezoidal potential barrier can be symmetrical, also can be asymmetric.
Preferably, 0≤x＜0.1,1＜y＜0.2.
The embodiment of the invention is very little by the composition of Al in the electronic barrier layer near active layer the time, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.The LED epitaxial wafer that embodiment two provides is under optimal condition, but improving luminous efficiency 10%.
Embodiment three
The embodiment of the invention provides a kind of LED epitaxial wafer, and referring to Fig. 4-6, the structure of the epitaxial wafer that this epitaxial wafer and embodiment one provide is basic identical, and difference is that electronic barrier layer is P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) superlattice, a is P-In among the figure
xAl
yGa
1-x-yN, b are P-GaN, along with the rising of electronic blocking layer thickness, P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) in the superlattice between adjacent two cycles component of Al be to raise first to reduce again P-In in the superlattice in single cycle
xAl
yGa
1-x-yAl's remains unchanged among the N; The barrier structure of electronic barrier layer can be symmetrical, also can be asymmetric.
Preferably, 0≤x＜0.1,1＜y＜0.2.
Further, the thickness of the superlattice in each cycle is identical, referring to Fig. 4.
Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is successively from being thinned to thick again attenuation, referring to Fig. 5.Thinner thickness near active layer one side can further reduce stress; Thinner near the second semiconductor one side simultaneously, the hole is the easier source region that is injected with also.
Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is thickening gradually, referring to Fig. 6.
Or, from active layer one side to the second semiconductor layer one side, the gradually attenuation of the thickness of single Periodic Superlattice.
The embodiment of the invention is very little by the composition of Al in the electronic barrier layer near active layer the time, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.The LED epitaxial wafer that embodiment three provides is under optimal condition, but improving luminous efficiency 10%.
Embodiment four
The embodiment of the invention provides a kind of LED epitaxial wafer, and referring to Fig. 7, the structure of the epitaxial wafer that this epitaxial wafer and embodiment one provide is basic identical, and difference is that electronic barrier layer is P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) superlattice, a is P-In among the figure
xAl
yGa
1-x-yN, b are P-GaN, along with the rising of electronic blocking layer thickness, P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) in the superlattice between adjacent two cycles component of Al be to raise first to reduce again; When the component of Al reaches the highest, within some cycles, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe Al component keeps the highest constant among the N; The barrier structure of electronic barrier layer can be symmetrical, also can be asymmetric.
Preferably, 0≤x＜0.1,1＜y＜0.2.
Further, the thickness of the superlattice in each cycle is identical; Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is successively from being thinned to thick again attenuation; Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is thickening gradually; Or from active layer one side to the second semiconductor layer one side, the gradually attenuation of the thickness of single Periodic Superlattice.
The embodiment of the invention is very little by the composition of Al in the electronic barrier layer near active layer the time, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.The LED epitaxial wafer that embodiment four provides is under optimal condition, but improving luminous efficiency 11.5%.
Embodiment five
The embodiment of the invention provides a kind of LED epitaxial wafer, and referring to Fig. 8, the structure of the epitaxial wafer that this epitaxial wafer and embodiment one provide is basic identical, and difference is that electronic barrier layer is P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) superlattice, a is P-In among the figure
xAl
yGa
1-x-yN, b are P-GaN, along with the rising of electronic blocking layer thickness, P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) in the superlattice between adjacent two cycles component of Al be to raise first to reduce again; P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe component of Al raises or gradually reduction gradually among the N; The barrier structure of electronic barrier layer can be symmetrical, also can be asymmetric.
Preferably, 0≤x＜0.1,1＜y＜0.2.
Further, the thickness of the superlattice in each cycle is identical; Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is successively from being thinned to thick again attenuation; Or from active layer one side to the second semiconductor layer one side, the thickness of single Periodic Superlattice is thickening gradually; Or from active layer one side to the second semiconductor layer one side, the gradually attenuation of the thickness of single Periodic Superlattice.
The embodiment of the invention is very little by the composition of Al in the electronic barrier layer near active layer the time, thereby reduces lattice mismatch, has avoided unnecessary electronics and the compound phenomenon in hole; And near P type layer time, barrier height reduces gradually, has reduced the difficulty that the hole is injected, thereby has improved the combined efficiency in electronics and hole, promotes the luminous efficiency of light-emitting diode.The LED epitaxial wafer that embodiment five provides is under optimal condition, but improving luminous efficiency 12%.
The invention described above embodiment sequence number does not represent the quality of embodiment just to description.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. LED epitaxial slice, described epitaxial wafer comprises substrate (1), covers upper the first semiconductor layer of described substrate (1) (2), active layer (3), electronic barrier layer (4) and the second semiconductor layer (5) successively, described the first semiconductor layer (2) comprises N-type GaN layer, described the second semiconductor layer (5) comprises P type GaN layer, it is characterized in that described electronic barrier layer (4) is the P-In of individual layer
xAl
yGa
1-x-yN(0≤X＜1,0＜Y＜1) or P-In
xAl
yGa
1-x-yN/P-GaN(0≤X＜1,0＜Y＜1) superlattice, along with the rising of electronic blocking layer thickness, the P-In of individual layer
xAl
yGa
1-x-yThe component of Al raise first rear reduction or the rear reduction that remains unchanged again that raises first among the N, P-In
xAl
yGa
1-x-yThe component of Al raise first rear reduction or the rear reduction that remains unchanged again that raises first between adjacent two cycles in the N/P-GaN superlattice.
2. epitaxial wafer according to claim 1 is characterized in that, 0≤x＜0.1,1＜y＜0.2.
3. epitaxial wafer according to claim 1 is characterized in that, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe component of Al remains unchanged among the N.
4. epitaxial wafer according to claim 1 is characterized in that, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe component of Al raises or gradually reduction gradually among the N.
5. epitaxial wafer according to claim 1 is characterized in that, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, when the component of Al reaches the highest, within some cycles, P-In in the superlattice in single cycle
xAl
yGa
1-x-yThe Al component keeps the highest constant among the N.
6. each described epitaxial wafer is characterized in that according to claim 3-5, described P-In
xAl
yGa
1-x-yIn the N/P-GaN superlattice, the thickness of the superlattice in each cycle is identical.
7. each described epitaxial wafer is characterized in that according to claim 3-5, described P-In
xAl
yGa
1-x-yThe thickness in each cycle of N/P-GaN superlattice is different, and from described active layer one side to described the second semiconductor layer one side, the thickness of single Periodic Superlattice is from being thinned to thick again attenuation.
8. each described epitaxial wafer is characterized in that according to claim 3-5, described P-In
xAl
yGa
1-x-yThe thickness in each cycle of N/P-GaN superlattice is different, and from described active layer one side to described the second semiconductor layer one side, the thickness of single Periodic Superlattice is thickening or gradually attenuation gradually.
9. epitaxial wafer according to claim 1 is characterized in that, the thickness of described electronic barrier layer is no more than 100nm.
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| CN114649454B (en) * | 2022-05-23 | 2022-08-23 | 江西兆驰半导体有限公司 | Epitaxial wafer structure of light emitting diode and preparation method thereof |
| CN114649454A (en) * | 2022-05-23 | 2022-06-21 | 江西兆驰半导体有限公司 | Epitaxial wafer structure of light emitting diode and preparation method thereof |
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