CN205900578U

CN205900578U - Light emitting diode epitaxial wafer

Info

Publication number: CN205900578U
Application number: CN201620788101.4U
Authority: CN
Inventors: 万林
Original assignee: HC Semitek Zhejiang Co Ltd
Current assignee: HC Semitek Zhejiang Co Ltd
Priority date: 2016-07-25
Filing date: 2016-07-25
Publication date: 2017-01-18
Anticipated expiration: 2026-07-25

Abstract

The utility model discloses a light emitting diode epitaxial wafer belongs to the semiconductor technology field. Light emitting diode epitaxial wafer includes the substrate and stacks gradually buffer layer on the substrate, non - doping gaN layer, superlattice release of stress layer, P type layer, electron barrier layer, multi -quantum well layer, electric current extension layer, N type layer. The utility model discloses a buffer layer stacks gradually on the substrate, non - doping gaN layer, superlattice release of stress layer, P type layer, the electron barrier layer, the multi -quantum well layer, the electric current extension layer, N type layer, owing to grow in the preferential multi -quantum well layer in P type layer, consequently the mg's that adulteratees activation efficiency can be improved through the growth temperature on rising P type layer in the P type layer and the multi -quantum well layer can be do not not destroyed, make electron and hole at the abundant recombination luminescence in multi -quantum well layer, the efficiency of emitting diode's is luminous is improved.

Description

A kind of LED epitaxial slice

Technical field

This utility model is related to technical field of semiconductors, particularly to a kind of LED epitaxial slice.

Background technology

Light emitting diode (light emitting diodes, abbreviation led) chip is that one kind directly can be converted into electricity The solid-state semiconductor device of light, is the core component of light emitting diode.Light-emitting diode chip for backlight unit include gan base epitaxial wafer, with And on epitaxial wafer make electrode.

Existing epitaxial wafer generally includes substrate and is sequentially coated on cushion on substrate, undoped gan layer, N-shaped Layer, multiple quantum well layer and p-type layer.Wherein, multiple quantum well layer is some quantum well layers and some quantum barrier layers are alternatively formed.

During realizing this utility model, inventor find prior art at least there is problems in that

The activation efficiency very low (less than 1%) of the mg of doping in p-type layer, if improving growth temperature to improve activation efficiency, Multiple quantum well layer can be corrupted to, affect internal quantum efficiency.

Utility model content

In order to solve problem of the prior art, this utility model embodiment provide a kind of LED epitaxial slice and its Preparation method.Described technical scheme is as follows:

This utility model embodiment provides a kind of LED epitaxial slice, and described LED epitaxial slice includes serving as a contrast Bottom and stack gradually cushion over the substrate, undoped gan layer, superlattices stress release layer, p-type layer, electronics resistance Barrier, multiple quantum well layer, current extending, n-layer.

Alternatively, described superlattices stress release layer includes alternately laminated mgn layer and gan layer.

Alternatively, described superlattices stress release layer includes the al of alternately laminated p-type doping_xga_1-xN-layer and p-type doping Gan layer, 0 ＜ x ＜ 1.

Preferably, in described superlattices stress release layer, the thickness of each layer is 1～10nm.

Alternatively, the algan layer that described current extending adulterates for N-shaped.

The technical scheme that this utility model embodiment provides has the benefit that

By cushion, undoped gan layer, superlattices stress release layer, p-type layer, electronics resistance are stacked gradually on substrate Barrier, multiple quantum well layer, current extending, n-layer, due to the growth of p-type layer preferential multiple quantum well layer, therefore can be by raising The growth temperature of p-type layer is improving in p-type layer the activation efficiency of mg of doping and will not be corrupted to multiple quantum well layer.And it is super brilliant Lattice stress release layer includes alternately laminated mgn layer and gan layer, or the al of alternately laminated p-type doping_xga_1-xN-layer and p-type The gan layer of doping, 0 ＜ x ＜ 1, it is possible to reduce polarization and stress, it is to avoid because the doping efficiency that electrode polarization leads to mg reduces, enter One step improves the activation efficiency of the mg of doping in p-type layer, is conducive to the capture of carrier and carrier to divide in the uniform of luminous zone Cloth, makes electronics and hole in the abundant recombination luminescence of multiple quantum well layer, improves the luminous efficiency of light emitting diode.

Brief description

In order to be illustrated more clearly that the technical scheme in this utility model embodiment, below will be to required in embodiment description Accompanying drawing to be used be briefly described it should be apparent that, drawings in the following description are only that of the present utility model some are real Apply example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to these accompanying drawings Obtain other accompanying drawings.

Fig. 1 is a kind of structural representation of LED epitaxial slice that this utility model embodiment provides.

Specific embodiment

For making the purpose of this utility model, technical scheme and advantage clearer, new to this practicality below in conjunction with accompanying drawing Type embodiment is described in further detail.

Embodiment

This utility model embodiment provides a kind of LED epitaxial slice, referring to Fig. 1, this LED epitaxial slice Including substrate 1 and stack gradually cushion 2 on substrate 1, undoped gan layer 3, superlattices stress release layer 4, p-type layer 5th, electronic barrier layer 6, multiple quantum well layer 7, current extending 8, n-layer 9.

In a kind of implementation of the present embodiment, superlattices stress release layer 4 can include alternately laminated mgn layer and Gan layer.

In another kind of implementation of the present embodiment, superlattices stress release layer 4 can include alternately laminated p-type and mix Miscellaneous al_xga_1-xN-layer and the gan layer of p-type doping, 0 ＜ x ＜ 1.

Alternatively, in superlattices stress release layer 4, the thickness of each layer can be 1～10nm.

Alternatively, current extending 8 can be the algan layer of N-shaped doping.

In the present embodiment, substrate 1 can be Sapphire Substrate, and cushion 2 can be gan layer, and p-type layer 5 can be p-type The gan layer of doping, electronic barrier layer 6 can be the algan layer of p-type doping, and multiple quantum well layer 7 can include alternately laminated Ingan quantum well layer and gan quantum barrier layer, n-layer 9 can be the gan layer of N-shaped doping.

This utility model embodiment is passed through to stack gradually cushion, undoped gan layer, superlattices Stress Release on substrate Layer, p-type layer, electronic barrier layer, multiple quantum well layer, current extending, n-layer, due to the growth of p-type layer preferential multiple quantum well layer, Therefore the activation efficiency of the mg adulterating in p-type layer can be improved and will not be corrupted to many by raising the growth temperature of p-type layer Quantum well layer.And superlattices stress release layer includes alternately laminated mgn layer and gan layer, or alternately laminated p-type doping Al_xga_1-xN-layer and the gan layer of p-type doping, 0 ＜ x ＜ 1, it is possible to reduce polarization and stress, it is to avoid because electrode polarization leads to mg Doping efficiency reduce, further improve p-type layer in doping mg activation efficiency, be conducive to capture and the carrier of carrier Being uniformly distributed in luminous zone, makes electronics and hole in the abundant recombination luminescence of multiple quantum well layer, improves sending out of light emitting diode Light efficiency.

The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all in this practicality Within new spirit and principle, any modification, equivalent substitution and improvement made etc., should be included in guarantor of the present utility model Within the scope of shield.

Claims

1. a kind of LED epitaxial slice is it is characterised in that described LED epitaxial slice includes substrate and layer successively Folded cushion over the substrate, undoped gan layer, superlattices stress release layer, p-type layer, electronic barrier layer, MQW Layer, current extending, n-layer.

2. LED epitaxial slice according to claim 1 is it is characterised in that described superlattices stress release layer includes Alternately laminated mgn layer and gan layer.

3. LED epitaxial slice according to claim 1 is it is characterised in that described superlattices stress release layer includes The al of alternately laminated p-type doping_xga_1-xN-layer and the gan layer of p-type doping, 0 ＜ x ＜ 1.

4. the LED epitaxial slice according to Claims 2 or 3 is it is characterised in that described superlattices stress release layer In each layer thickness be 1～10nm.

5. the LED epitaxial slice according to any one of claim 1-3 is it is characterised in that described current extending is The algan layer of N-shaped doping.