CN102157647A - Nitride LED structure and preparation method thereof - Google Patents
Nitride LED structure and preparation method thereof Download PDFInfo
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- CN102157647A CN102157647A CN2011101125316A CN201110112531A CN102157647A CN 102157647 A CN102157647 A CN 102157647A CN 2011101125316 A CN2011101125316 A CN 2011101125316A CN 201110112531 A CN201110112531 A CN 201110112531A CN 102157647 A CN102157647 A CN 102157647A
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Abstract
The invention discloses a nitride LED structure. The hole concentration can be enhanced and the doping concentration of a P type hole injection layer can be reduced by carrying out P type doping on a part of barriers of quantum wells, which are positioned in active layers of the multiple quantum wells, and utilizing a polarization effect of a heterojunction structure comprising potential wells and the barriers, therefore the diffusion of doping atoms towards the quantum wells is reduced and the internal quantum efficiency and the light-emitting efficiency of a device are improved. The invention also discloses a preparation method of the nitride LED structure. By selectively carrying out P type doping on the part of barriers, the hole concentration is improved and the doping concentration of the P type hole injection layer is reduced; the doping efficiency of the barriers is improved and the concentration of impurities doped in the barriers is reduced by utilizing the polarization effect of the heterojunction structure comprising the potential wells and the barriers of the quantum wells, and therefore the internal quantum efficiency and the light-emitting efficiency of the device are improved.
Description
Technical field
The present invention relates to the LED preparing technical field, relate in particular to a kind of nitride LED structure and preparation method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.After the two ends of semiconductor PN add forward voltage, inject the minority carrier of PN junction and majority carrier and take place compoundly, emit superfluous energy and cause photo emissions, directly send the light that color is red, orange, yellow, green, blue, blue, purple.
Along with the exploitation of using based on the high-brightness LED of nitride, new generation of green environment protection solid lighting source-nitride LED has become the focus that people pay close attention to.Having wide direct band gap, strong chemical bond, premium properties such as high temperature resistant, anticorrosive based on the III hi-nitride semiconductor material of GaN, InGaN and A1GaN alloy, is the ideal material of making short wavelength's high brightness luminescent device.
Common GaN base LED luminescent device adopts the P-N junction structure, and is provided with multi-quantum pit structure between P type semiconductor and N type semiconductor, and described multi-quantum pit structure is as active area.When device was worked, recombination luminescence in the quantum well active area was imported from the N type district and the p type island region at active area two ends respectively in electronics and hole.Wherein, the electrical properties of material is the key factor that influences the luminescent device performance.Because the energy gap broad of nitride, so the acquisition of nitride P-type material and low hole are the principal elements of restriction nitride light-emitting device performance always.The P type impurity that nitride material adopts usually is Mg or Zn.
Owing to be difficult to the body material of growing gallium nitride, thus nitride the LED structure all be grown on the foreign substrate usually along [0001] direction.The cubic structure that is different from traditional III-V compound semiconductor, the III group-III nitride semiconductor of hexagonal wurtzite structure has extremely strong spontaneous polarization and piezoelectric polarization effect along [0001] direction.Polarity effect is in the structural design of III group-III nitride LED and play a part two-sided in making: on the one hand, polarity effect can produce Stark effect (Stark Effect) in multiple quantum well active layer, cause the electronics of injection trap and the wave function overlapping in hole to diminish, cause the internal quantum efficiency of luminescent device to reduce.On the other hand, studies show that, utilize the AlGaN/GaN of piezoelectric effect and InGaN/GaN heterojunction can improve the activation efficiency of P type nitride impurity greatly, thereby significantly improve the hole density (improving more than the order of magnitude) of Mg or Zn doping generation.This mainly is because piezoelectric effect produces very strong internal electric field in heterojunction, causes the band curvature degree sharply to increase, and has reduced the acceptor activation energy of foreign atom effectively, has improved the doping efficiency of p type impurity.
For obtaining P type nitride material, improve the concentration of holoe carrier, the way of taking at present is as follows:
A kind of is to utilize the Mg of high concentration or Zn that nitride is mixed, and obtains heavily doped P type nitride material; The band structure that adopts the nitride LED that this method forms as shown in Figure 1, this nitride LED comprise N type electron injecting layer, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, establish quantum well in the described multiple quantum well active layer comprise M+N potential barrier (B1, B2 ... B
M+NM＞1, N＞1).Because in this case, the activation efficiency of p type impurity has only about 1%, in order to improve the concentration in hole, improve the luminous efficiency of LED device, described P type hole injection layer must carry out heavy doping (shadow region shows that P type hole injection layer has carried out heavy doping among the figure), promptly utilizes the Mg of high concentration or Zn impurity that described P type hole injection layer is carried out heavy doping.Yet, because the doping content of Mg or Zn impurity is very high, in the use of luminescent device, will cause a part of Mg or Zn impurity by diffusing in the active area mqw light emitting layer like this, as non-radiative recombination center, thus the luminous efficiency of reduction device;
Another kind is to utilize the polarity effect of heterojunction that the potential barrier of all quantum well in the Multiple Quantum Well active area is all carried out the doping of P type, thereby effectively improves the concentration in hole; Yet the potential barrier of all quantum well is all carried out the P type mixes, the p type island region and the N type district of LED structure are directly linked together, lack effective non-doping transition zone, thereby influence the electric property of device, can influence the forward voltage of device specifically, reverse leakage and the antistatic property that reduces device.
Therefore, how to obtain high-quality P type nitride material effectively, improve the luminous intensity of LED device, do not influence the electric property of LED device simultaneously again, become the technical problem that present industry is needed solution badly.
Summary of the invention
The object of the present invention is to provide a kind of nitride LED structure and preparation method thereof, to improve the performance of nitride LED.
For addressing the above problem, the present invention proposes a kind of nitride LED structure, this nitride LED structure comprises N type electron injecting layer at least, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, the energy gap of described N type electron injecting layer, the energy gap of the energy gap of P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, and the potential barrier of the part quantum well in the described multiple quantum well active layer carried out the P type mix.
Optionally, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type mixes in the central area of potential barrier; And
Potential barrier integral body is carried out the P type mixes.
Optionally, the described potential barrier of the quantum well that the P type mixes of having carried out is all near described P type hole injection layer.
Optionally, the foreign atom of described P type doping employing is Mg or Zn.
Optionally, described N type electron injecting layer, P type hole injection layer and multiple quantum well active layer are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Optionally, the potential well of the quantum well in the described multiple quantum well active layer is made up of InGaN, and the potential barrier of the quantum well in the described multiple quantum well active layer is made up of GaN.
Optionally, low temperature buffer layer and plain nitride layer that this nitride LED structure also comprises substrate, grows successively on described substrate, be formed with described N type electron injecting layer, described multiple quantum well active layer and described P type hole injection layer on the described plain nitride layer successively, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
Simultaneously, for addressing the above problem, the present invention also proposes a kind of preparation method of nitride LED structure, and this method comprises the steps:
Substrate is provided;
On described substrate, form low temperature buffer layer, plain nitride layer, N type electron injecting layer, multiple quantum well active layer and P type hole injection layer successively, wherein, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer;
Optionally the potential barrier of the part quantum well in the described multiple quantum well active layer being carried out the P type mixes;
Etching described P type hole injection layer and described multiple quantum well active layer form an important actor face successively, and expose described N type electron injecting layer, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
Optionally, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type mixes in the central area of potential barrier; And
Potential barrier integral body is carried out the P type mixes.
Optionally, the described potential barrier of the quantum well that the P type mixes of having carried out is all near described P type hole injection layer.
Optionally, the foreign atom of described P type doping employing is Mg or Zn.
Optionally, described N type electron injecting layer, P type hole injection layer and multiple quantum well active layer are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Optionally, the potential well of the quantum well in the described multiple quantum well active layer is made up of InGaN, and the potential barrier of the quantum well in the described multiple quantum well active layer is made up of GaN.
Compared with prior art, nitride LED structure provided by the invention, the potential barrier of the part quantum well in its multiple quantum well active layer have been carried out the doping of P type, thereby can improve the hole concentration of LED device, reduce the doping content of P type hole injection layer; And the energy gap of the potential barrier of the quantum well in the described multiple quantum well active layer is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby the heterojunction structure of described potential well and potential barrier composition has polarity effect, improve the doping efficiency of potential barrier, reduced the concentration of impurity; Spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device.
Compared with prior art, the preparation method of nitride LED structure provided by the invention, mix by optionally the potential barrier of the part quantum well in the described multiple quantum well active layer being carried out the P type, improved the hole concentration of LED device, reduce the doping content of P type hole injection layer; And the energy gap of the potential barrier of the quantum well in the described multiple quantum well active layer is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby the heterojunction structure of described potential well and potential barrier composition has polarity effect, improve the doping efficiency of potential barrier, can reduce the impurity concentration that potential barrier is mixed; Spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device.
Description of drawings
Fig. 1 is the band structure schematic diagram of existing LED structure;
The profile of the nitride LED structure that Fig. 2 provides for the embodiment of the invention;
Can be with schematic diagram for first kind of the LED structure that Fig. 3 provides for the embodiment of the invention;
Can be with schematic diagram for second kind of the LED structure that Fig. 4 provides for the embodiment of the invention;
The third of the LED structure that Fig. 5 provides for the embodiment of the invention can be with schematic diagram;
Fig. 6 illustrates for the 4th kind of energy band of the LED structure that the embodiment of the invention provides.
Embodiment
Nitride LED structure that the present invention is proposed below in conjunction with the drawings and specific embodiments and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of nitride LED structure is provided, and the potential barrier of the part quantum well in its multiple quantum well active layer has been carried out the doping of P type, thereby can improve the hole concentration of LED device, reduces the doping content of P type hole injection layer; Because the energy gap of the potential barrier of the quantum well in the described multiple quantum well active layer is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby the structure of described potential well and potential barrier composition has polarity effect.Utilize polarity effect can improve the doping efficiency of p type impurity, reduce the impurity concentration of mixing; Spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device; Simultaneously, the present invention also provides a kind of preparation method of nitride LED structure, mix by optionally the potential barrier of the part quantum well in the described multiple quantum well active layer being carried out the P type, improved the hole concentration of LED device, reduce the doping content of P type hole injection layer; And the energy gap of the potential barrier of the quantum well in the described multiple quantum well active layer is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby the structure of described potential well and potential barrier composition has polarity effect, improve the doping efficiency of potential barrier, reduced the impurity concentration that potential barrier is mixed; Spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device.
Please refer to Fig. 2, the profile of the nitride LED structure that Fig. 2 provides for the embodiment of the invention, as shown in Figure 2, the nitride LED structure that the embodiment of the invention provides comprises substrate 101, the low temperature buffer layer 102 that on described substrate 101, forms successively, plain nitride layer 103, N type electron injecting layer 104, multiple quantum well active layer 105, and P type hole injection layer 106, wherein, described N type electron injecting layer 104 links to each other with N type electrode 107, be formed with transparent electrode layer 108 on the described P type hole injection layer 106, preparation has P type electrode 109 on the described transparent electrode layer 108; Wherein, the energy gap of the energy gap of the energy gap of described N type electron injecting layer 104, P type hole injection layer 106 and the potential barrier of the quantum well in the multiple quantum well active layer 105 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 105, and the potential barrier of the part quantum well in the described multiple quantum well active layer 105 has been carried out the P type and mixed.
The band structure of the nitride LED structure that provides about the embodiment of the invention, please refer to Fig. 3 to Fig. 6, wherein, can be with schematic diagram for first kind of the LED structure that Fig. 3 provides for the embodiment of the invention, can be with schematic diagram for second kind of the LED structure that Fig. 4 provides for the embodiment of the invention, the third of the LED structure that Fig. 5 provides for the embodiment of the invention can be with schematic diagram, can be with schematic diagram for the 4th kind of the LED structure that Fig. 6 provides for the embodiment of the invention.
As Fig. 3 to shown in Figure 6, in embodiments of the present invention, the potential barrier number of establishing described quantum well be M+N (B1, B2 ... B
M+NM＞1, N＞1), wherein to select N potential barrier to carry out the P type and mix, all the other M potential barrier undopes; Described doped region is represented by the shade among the figure.Because the part potential barrier of described quantum well has been carried out selectivity P type mixes, thereby can improve hole concentration, thereby need not adopt the impurity of high concentration that described P type hole injection layer is mixed, and the impurity that only need adopt relatively low concentration mixes to described P type hole injection layer and gets final product, reduce foreign atom and in potential well, spread, improved the internal quantum efficiency and the luminous efficiency of device.
Wherein, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type and mix, do not mix near the part of quantum well potential well, as shown in Figures 3 and 4 in the central area of potential barrier; Thereby can prevent that foreign atom directly is diffused in the potential well; And
Potential barrier integral body is carried out the P type mix, as Fig. 5 and shown in Figure 6.
And the described distribution of having carried out the potential barrier of the quantum well that the P type mixes can be selected all near described P type hole injection layer, and promptly from the potential barrier of the most close described P type hole injection layer, a selective sequential N potential barrier is carried out the doping of P type, as Fig. 3 and shown in Figure 5; Can certainly at random select N potential barrier to carry out the P type and mix, and not necessarily will be near described P type hole injection layer, as Fig. 4 and shown in Figure 6.
Further, the foreign atom of described P type doping employing is Mg or Zn.
Further, described N type electron injecting layer 104, P type hole injection layer 106 and multiple quantum well active layer 105 are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Further, the potential well of the quantum well in the described multiple quantum well active layer 105 is made up of InGaN, the potential barrier of the quantum well in the described multiple quantum well active layer 105 is made up of GaN, thereby form the InGaN/GaN quantum well, because the piezoelectric polarization and the spontaneous polarization effect of InGaN/GaN Multiple Quantum Well, cause semiconductor valence band band edge significantly crooked, make the activation efficiency of the foreign atom that the P type mixes improve, thereby the doping impurity concentration that potential barrier is selected can be less than the doping content of described P type hole injection layer 106, spread in potential well thereby further reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of device.And, because mixing, the potential barrier of multiquantum well region produces the holoe carrier of relative higher concentration, make the doping content of P type hole injection layer 106 to reduce relatively, in potential well, spread, improved the internal quantum efficiency and the luminous efficiency of device thereby further reduced foreign atom.
In conjunction with Fig. 2, the preparation method of the nitride LED structure that the embodiment of the invention provides comprises the steps:
On described substrate 101, form low temperature buffer layer 102, plain nitride layer 103, N type electron injecting layer 104, multiple quantum well active layer 105 and P type hole injection layer 106 successively, wherein, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer 104, P type hole injection layer 106 and the quantum well in the multiple quantum well active layer 105 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 105;
Optionally the potential barrier of the part quantum well in the described multiple quantum well active layer 105 being carried out the P type mixes;
The described P type of etching hole injection layer 106 and described multiple quantum well active layer 105 form an important actor face successively, and expose described N type electron injecting layer 104, preparation N type electrode 107 on the N type electron injecting layer 104 that exposes;
Preparation transparent electrode layer 108 and P type electrode 109 on the described P type hole injection layer 106 after the etching.
The LED structure that the method for utilizing the embodiment of the invention to provide prepares can be with schematic diagram such as Fig. 3 to shown in Figure 6, in embodiments of the present invention, the potential barrier number of establishing described quantum well be M+N (B1, B2 ... B
M+NM＞1, N＞1), wherein to select N potential barrier to carry out the P type and mix, all the other M potential barrier undopes; Described doped region is represented by the shade among the figure.Because the part potential barrier of described quantum well has been carried out selectivity P type mixes, thereby can improve hole concentration, thereby need not adopt the impurity of high concentration that described P type hole injection layer is mixed, and the impurity that only need adopt low concentration mixes to described P type hole injection layer and gets final product, reduce foreign atom and in potential well, spread, improved the internal quantum efficiency and the luminous efficiency of device.
Wherein, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type and mix, do not mix near the part of quantum well potential well, as shown in Figures 3 and 4 in the central area of potential barrier; Thereby can prevent that foreign atom directly is diffused in the potential well; And
Potential barrier integral body is carried out the P type mix, as Fig. 5 and shown in Figure 6.
And the described distribution of having carried out the potential barrier of the quantum well that the P type mixes can be selected all near described P type hole injection layer, and promptly from the potential barrier of the most close described P type hole injection layer, a selective sequential N potential barrier is carried out the doping of P type, as Fig. 3 and shown in Figure 5; Can certainly at random select N potential barrier to carry out the P type and mix, and not necessarily will be near described P type hole injection layer, as Fig. 4 and shown in Figure 6.
Further, the foreign atom of described P type doping employing is Mg or Zn.
Further, described N type electron injecting layer 104, P type hole injection layer 106 and multiple quantum well active layer 105 are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Further, the potential well of the quantum well in the described multiple quantum well active layer 105 is made up of InGaN, the potential barrier of the quantum well in the described multiple quantum well active layer 105 is made up of GaN, thereby form the InGaN/GaN quantum well, because the piezoelectric polarization and the spontaneous polarization effect of InGaN/GaN Multiple Quantum Well, cause semiconductor valence band band edge significantly crooked, make the activation efficiency of the foreign atom that the P type mixes improve, thereby the doping impurity concentration selected of potential barrier will be further less than the doping content of described P type hole injection layer 106, spread in potential well thereby further reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of device.And, the holoe carrier of the relative higher concentration of generation because the potential barrier of multiquantum well region is mixed, make the doping content of P type hole injection layer 106 to reduce relatively, in potential well, spread, improved the internal quantum efficiency and the luminous efficiency of device thereby further reduced foreign atom.
In a specific embodiment of the present invention, the potential well of the quantum well in the described multiple quantum well active layer 105 is made up of InGaN, and the potential barrier of the quantum well in the described multiple quantum well active layer 105 is made up of GaN, yet should be realized that, the present invention is not as limit, and described potential well and potential barrier all can be by Al
xGa
yIn
1-x-yN forms, wherein, 0＜x＜1,0＜x+y＜1, the value that only needs to regulate x and y, make different the getting final product of energy gap of energy gap with potential barrier of potential well, as long as the energy gap of potential well is different with the energy gap of potential barrier, then will produce polarity effect between potential well and the potential barrier, cause the inclination that can be with, thereby improve the activation efficiency of p type impurity atom, improve the hole density that the P type mixes and produces.
In sum, the invention provides a kind of nitride LED structure, the potential barrier of the part quantum well in its multiple quantum well active layer has been carried out the P type and has been mixed, because the energy gap of the potential barrier of the quantum well in the multiple quantum well active layer is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, utilize polarity effect to improve the doping efficiency of p type impurity, can reduce the impurity concentration of doping; And, because the potential barrier of the part quantum well in the multiple quantum well active layer has been carried out the P type mixes, thereby improved the hole concentration of LED device, therefore can reduce the doping content of P type hole injection layer, spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device; Simultaneously, the present invention also provides a kind of preparation method of nitride LED structure, mix by optionally the potential barrier of the part quantum well in the described multiple quantum well active layer being carried out the P type, utilize polarity effect, improved the doping efficiency of p type impurity, reduce the impurity concentration of mixing, improved the hole concentration of LED device; And, can reduce the doping content of P type hole injection layer; Spread in described potential well thereby reduced foreign atom, improved the internal quantum efficiency and the luminous efficiency of luminescent device.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (13)
1. nitride LED structure, at least comprise N type electron injecting layer, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, the energy gap of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, it is characterized in that the potential barrier of the part quantum well in the described multiple quantum well active layer has been carried out the P type and mixed.
2. nitride LED structure as claimed in claim 1 is characterized in that, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type mixes in the central area of potential barrier; And
Potential barrier integral body is carried out the P type mixes.
3. nitride LED structure as claimed in claim 2 is characterized in that, the described potential barrier of the quantum well that the P type mixes of having carried out is all near described P type hole injection layer.
4. nitride LED structure as claimed in claim 3 is characterized in that, the foreign atom that described P type doping is adopted is Mg or Zn.
5. as each described nitride LED structure of claim 1 to 4, it is characterized in that described N type electron injecting layer, P type hole injection layer and multiple quantum well active layer are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
6. nitride LED structure as claimed in claim 5 is characterized in that the potential well of the quantum well in the described multiple quantum well active layer is made up of InGaN, and the potential barrier of the quantum well in the described multiple quantum well active layer is made up of GaN.
7. nitride LED structure as claimed in claim 1, it is characterized in that, low temperature buffer layer and plain nitride layer that this nitride LED structure also comprises substrate, grows successively on described substrate, be formed with described N type electron injecting layer, described multiple quantum well active layer and described P type hole injection layer on the described plain nitride layer successively, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
8. the preparation method of a nitride LED structure is characterized in that, comprises the steps:
Substrate is provided;
On described substrate, form low temperature buffer layer, plain nitride layer, N type electron injecting layer, multiple quantum well active layer and P type hole injection layer successively, wherein, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer;
Optionally the potential barrier of the part quantum well in the described multiple quantum well active layer being carried out the P type mixes;
Etching described P type hole injection layer and described multiple quantum well active layer form an important actor face successively, and expose described N type electron injecting layer, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
9. the preparation method of nitride LED structure as claimed in claim 8 is characterized in that, the P type of the potential barrier of described part quantum well mixes and comprises dual mode:
Only carry out the P type mixes in the central area of potential barrier; And
Potential barrier integral body is carried out the P type mixes.
10. the preparation method of nitride LED structure as claimed in claim 9 is characterized in that, the described potential barrier of the quantum well that the P type mixes of having carried out is all near described P type hole injection layer.
11. the preparation method of nitride LED structure as claimed in claim 10 is characterized in that, the foreign atom that described P type doping is adopted is Mg or Zn.
12. the preparation method as each described nitride LED structure of claim 8 to 11 is characterized in that, described N type electron injecting layer, P type hole injection layer and multiple quantum well active layer are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
13. the preparation method of nitride LED structure as claimed in claim 12 is characterized in that, the potential well of the quantum well in the described multiple quantum well active layer is made up of InGaN, and the potential barrier of the quantum well in the described multiple quantum well active layer is made up of GaN.
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| CN105206717A (en) * | 2015-09-18 | 2015-12-30 | 华灿光电股份有限公司 | GaN-based luminous diode epitaxial wafer and preparation method thereof |
| CN108807618A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of GaN base light emitting InGaN/GaN quantum well structures and preparation method thereof |
| WO2023082092A1 (en) * | 2021-11-10 | 2023-05-19 | 重庆康佳光电技术研究院有限公司 | Semiconductor epitaxial structure, application thereof, and manufacturing method therefor |
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| CN1459900A (en) * | 2002-05-17 | 2003-12-03 | 三菱电机株式会社 | Semiconductor laser |
| CN1487604A (en) * | 2002-09-30 | 2004-04-07 | 中国科学院物理研究所 | GaN-base multiple quantum well structure and LED of the structure |
| CN101740668A (en) * | 2008-11-06 | 2010-06-16 | 晶元光电股份有限公司 | Light-emitting element |
| CN101771120A (en) * | 2008-12-31 | 2010-07-07 | 晶元光电股份有限公司 | Semiconductor light-emitting device |
| CN102088049A (en) * | 2009-12-07 | 2011-06-08 | Lg伊诺特有限公司 | Light emitting device and light emitting device package including the same |
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| CN105206717A (en) * | 2015-09-18 | 2015-12-30 | 华灿光电股份有限公司 | GaN-based luminous diode epitaxial wafer and preparation method thereof |
| CN105206717B (en) * | 2015-09-18 | 2018-10-23 | 华灿光电股份有限公司 | GaN base light emitting epitaxial wafer and preparation method thereof |
| CN108807618A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of GaN base light emitting InGaN/GaN quantum well structures and preparation method thereof |
| WO2023082092A1 (en) * | 2021-11-10 | 2023-05-19 | 重庆康佳光电技术研究院有限公司 | Semiconductor epitaxial structure, application thereof, and manufacturing method therefor |
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