CN102903743B - 采用金属硅化物的功率半导体器件结构及制备方法 - Google Patents
采用金属硅化物的功率半导体器件结构及制备方法 Download PDFInfo
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- CN102903743B CN102903743B CN201210421076.2A CN201210421076A CN102903743B CN 102903743 B CN102903743 B CN 102903743B CN 201210421076 A CN201210421076 A CN 201210421076A CN 102903743 B CN102903743 B CN 102903743B
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
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- 238000002347 injection Methods 0.000 claims description 4
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- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
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- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 229910021350 transition metal silicide Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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CN201210421076.2A CN102903743B (zh) | 2012-10-29 | 2012-10-29 | 采用金属硅化物的功率半导体器件结构及制备方法 |
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CN201210421076.2A CN102903743B (zh) | 2012-10-29 | 2012-10-29 | 采用金属硅化物的功率半导体器件结构及制备方法 |
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CN102903743A CN102903743A (zh) | 2013-01-30 |
CN102903743B true CN102903743B (zh) | 2015-03-18 |
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CN201210421076.2A Active CN102903743B (zh) | 2012-10-29 | 2012-10-29 | 采用金属硅化物的功率半导体器件结构及制备方法 |
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Families Citing this family (1)
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CN106158940A (zh) * | 2016-08-12 | 2016-11-23 | 无锡橙芯微电子股份有限公司 | 一种具有部分埋氧结构的igbt器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0718893A2 (en) * | 1994-11-25 | 1996-06-26 | Fuji Electric Co., Ltd. | MOS controlled thyristor having two gates |
CN101887913A (zh) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | 一种具有改善型集电极结构的igbt |
CN202282352U (zh) * | 2011-07-27 | 2012-06-20 | 江苏物联网研究发展中心 | 通过外延方法形成fs层的高压igbt |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US7414268B2 (en) * | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
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- 2012-10-29 CN CN201210421076.2A patent/CN102903743B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0718893A2 (en) * | 1994-11-25 | 1996-06-26 | Fuji Electric Co., Ltd. | MOS controlled thyristor having two gates |
CN101887913A (zh) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | 一种具有改善型集电极结构的igbt |
CN202282352U (zh) * | 2011-07-27 | 2012-06-20 | 江苏物联网研究发展中心 | 通过外延方法形成fs层的高压igbt |
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Owner name: INST OF MICROELECTRONICS, C. A. S JIANGSU JUNSHINE Effective date: 20130117 |
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Inventor after: Xu Chengfu Inventor after: Zhu Yangjun Inventor after: Wang Bo Inventor after: Lu Shuojin Inventor after: Wu Kai Inventor after: Chen Hong Inventor before: Xu Chengfu Inventor before: Zhu Yangjun Inventor before: Lu Shuojin Inventor before: Wu Kai Inventor before: Chen Hong |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU CHENGFU ZHU YANGJUN LU SHUOJIN WU KAI CHEN HONG TO: XU CHENGFU ZHU YANGJUN WANG BO LU SHUOJIN WU KAI CHEN HONG |
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Effective date of registration: 20130117 Address after: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Applicant after: JIANGSU R & D CENTER FOR INTERNET OF THINGS Applicant after: Institute of Microelectronics of the Chinese Academy of Sciences Applicant after: JIANGSU ZHONGKE JUNSHINE TECHNOLOGY Co.,Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Applicant before: JIANGSU R & D CENTER FOR INTERNET OF THINGS |
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