CN102800788A - Light-emitting diode (LED) packaging structure and silver plating substrate - Google Patents
Light-emitting diode (LED) packaging structure and silver plating substrate Download PDFInfo
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- CN102800788A CN102800788A CN2012102578498A CN201210257849A CN102800788A CN 102800788 A CN102800788 A CN 102800788A CN 2012102578498 A CN2012102578498 A CN 2012102578498A CN 201210257849 A CN201210257849 A CN 201210257849A CN 102800788 A CN102800788 A CN 102800788A
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- layer
- silver
- led
- plated substrate
- bowl cup
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses a light-emitting diode (LED) packaging structure which comprises a silver plating substrate, a die bond cup, an insulating dielectric layer and an LED wafer which is fixed in the die bond cup, wherein the die bond cup is arranged on the silver plating substrate; the silver plating substrate sequentially comprises a silver plate layer, a galvanization layer, an aluminum plate layer, an insulating layer and a radiating metal layer from top to bottom; the silver plate layer, the galvanization layer and the aluminum plate layer form a circuit layer; the aluminum plate layer is segmented into a block shape by the insulating dielectric layer; two poles of the LED wafer are respectively connected with the circuit layer through a metal line; the die bond cup is filled by a silica gel layer; and the LED wafer is packaged in the die bond cup by the silica gel layer. The invention also discloses an LED packaging structure.
Description
Technical field
The present invention relates to a kind of LED encapsulating structure and silver-plated substrate thereof.
Background technology
The chip on board encapsulation (Chip On Board, COB) technology is mounted on the semiconductor chip handing-over on the printed circuit board (PCB), and being electrically connected with the lead-in wire sewing method of chip and substrate realizes, and covers with resin.The problem that this technology exists is, at first, owing to be Copper Foil under the substrate of substrate, Copper Foil can be good at energising but can not accomplish good optical treatment, and light efficiency can only be about 100Lm/w; Secondly, the structure of substrate circuit is fixing can not be changed, and each light source can only change the size of power through changing the led chip kind; Once more, this encapsulated LED light source does not have thermoelectric the isolation, and heat conductivility is good inadequately, optical texture science not.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of LED encapsulating structure and silver-plated substrate thereof, and its light efficiency is higher, good heat dissipation and be applicable to the led chip of multiple power.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is:
A kind of LED encapsulating structure is provided, comprises silver-plated substrate, solid brilliant bowl cup, insulating medium layer and be fixed on the LED wafer in the solid brilliant bowl cup, said solid brilliant bowl cup is arranged on the said silver-plated substrate; Said silver-plated substrate comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, wherein, and said electric silver layer, zinc coat and aluminum layer forming circuit layer; Said aluminum layer is divided into bulk by said insulating medium layer, and the two poles of the earth of said LED wafer link to each other with circuit layer through metal wire respectively; Said solid brilliant bowl cup is filled by silica gel layer, said silica gel layer with the LED wafer package in solid brilliant bowl cup.
Wherein, said insulating medium layer is formed by the injection moulding bar, and said aluminum layer is cut apart by said injection moulding bar.
Wherein, said solid brilliant bowl cup is through silver-plated substrate boring is formed.
Wherein, the material of said silica gel layer is a fluorescent material and the glue that mixes of organic siliconresin.
Another technical scheme that the present invention adopts is:
A kind of silver-plated substrate of LED encapsulating structure is provided; Said silver-plated substrate comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively; Gu brilliant bowl cup is arranged on said silver-plated substrate; Said aluminum layer is insulated dielectric layer and is divided into bulk, and said electric silver layer, zinc coat and aluminum layer forming circuit layer, said circuit layer are used for being electrically connected as circuit the two poles of the earth with the LED wafer.
Wherein, said insulating medium layer is formed by the injection moulding bar, and said aluminum layer is cut apart by said injection moulding bar.
The invention has the beneficial effects as follows: LED encapsulating structure of the present invention and silver-plated substrate thereof, aluminum layer is divided into bulk through insulating medium layer, and divided aluminum layer and zinc coat and electric silver layer forming circuit layer, form series-parallel circuit.The present invention is a circuit with electric silver layer, increases the refraction of light, has improved light efficiency and thermal diffusivity; Improved spotlight effect through solid brilliant bowl cup.Therefore, the present invention has improved whole light efficiency, heat radiation and the life-span of light source, owing to there is not fixing circuit structure, therefore can realize freedom, circuit connection in series-parallel flexibly, and a many usefulness have strengthened the applicability of light source to market, and reduced cost.
Description of drawings
Fig. 1 is the floor map of LED encapsulating structure in an embodiment of the present invention;
Fig. 2 is the cutaway view of LED encapsulating structure among Fig. 1;
Fig. 3 is the flow chart of LED encapsulating structure manufacturing approach of the present invention;
Fig. 4 is the manufacturing approach flow chart of silver-plated substrate in the LED encapsulating structure of the present invention.
The main element symbol description
100, LED encapsulating structure; 10, silver-plated substrate; 11, electric silver layer; 12, zinc coat;
13, aluminum layer; 14, insulating barrier; 15, heat radiating metallic layer; 16, silica gel layer; 20, solid brilliant bowl cup;
30, insulating medium layer; 40, LED wafer; 50, circuit layer.
Embodiment
By specifying technology contents of the present invention, structural feature, realized purpose and effect, give explanation below in conjunction with execution mode and conjunction with figs. are detailed.
Please consult Fig. 1, Fig. 2 in the lump, be convenient explanation, the present invention is that example describes with the LED encapsulating structure of 6 solid brilliant bowl cups, in other embodiments, Gu the quantity of brilliant bowl cup designs the scope of neither disengaging the present invention protection as required.LED encapsulating structure 100 comprises silver-plated substrate 10, is arranged on solid brilliant bowl cup 20, the insulating medium layer 30 on the silver-plated substrate 10 and is fixed on the LED wafer 40 in the solid brilliant bowl cup 20.
Said silver-plated substrate comprises electric silver layer 11, zinc coat 12, aluminum layer 13, insulating barrier 14 and heat radiating metallic layer 15 from top to bottom successively.In this execution mode, said silver-plated substrate 10 is rounded, and in other embodiments, said silver-plated substrate 10 can be designed to other shapes as required.
Said electric silver layer 11, zinc coat 12 and aluminum layer 13 forming circuit layers 50.Wherein, said electric silver layer 11 is used to form the refraction of circuit and increase light.Said zinc coat 12 is used to said electric silver layer 11 and lays the groundwork.Said aluminum layer 13 is divided into bulk by said insulating medium layer 30; Divided aluminum layer 13 and electric silver layer 11, zinc coat 12 constitute divided circuit layer 50; Cut apart formation circuit connection in series-parallel relation through this; Particularly, said insulating medium layer 30 is formed by the injection moulding bar, and aluminum layer 13 is divided into bulk by said injection moulding bar.
Said insulating barrier 14 is used for heat conduction and thermoelectric the isolation, and said heat radiating metallic layer 15 is used for the heat that said insulating barrier 14 is derived is dispelled the heat, and in this execution mode, this heat radiating metallic layer 15 is the aluminium sheet material.
Said solid brilliant bowl cup 20 is arranged on the said silver-plated substrate 10; Said LED wafer 40 is fixed on 20 li in solid brilliant bowl cup; Particularly, said solid brilliant bowl cup 20 is to form through silver-plated substrate 10 is holed, and said LED wafer 40 is fixed on 20 li in solid brilliant bowl cup through crystal-bonding adhesive.The two poles of the earth of LED wafer 40 link to each other with the electric silver layer 11 of silver-plated substrate 10 through metal wire respectively, thereby form the power circuit of LED wafer 40, make the power circuit conducting, make LED wafer 40 electrified light emittings.
Be filled with the fluorescent material of special ratios and the glue that mixes of organic siliconresin in the said solid brilliant bowl cup 20, form silica gel layer 16, thereby be packaged into MCOB light source with particular optical parameter.
In LED encapsulating structure of the present invention, Gu the structure that brilliant bowl cup 20, LED wafer 40, silica gel layer 16 are formed is used to realize illumination effect that LED wafer 40 is specific; Electricity silver layer 11 has good refraction effect, improves the light efficiency of light source; Zinc coat 12 plays the conductive and heat-conductive effect; The block structure that aluminum layer 13 is divided into by the injection moulding bar, and divided aluminum layer 13 and zinc coat 12 and electric silver layer 11 formation series-parallel circuits, this series-parallel circuit is because the thermal conductivity of aluminum layer has good heat-conducting effect; Insulating barrier 14 and heat radiating metallic layer 15 can adopt the packing material of different conductive coefficients according to the difference of product power as anti-electricity, the radiator portion of LED encapsulating structure 100, thereby play heat conduction, heat radiation, thermoelectric effect of separating.
Seeing also Fig. 3, is the flow chart of LED encapsulating structure manufacturing approach of the present invention, and this LED encapsulating structure manufacturing approach comprises step:
Step S31, silver-plated substrate is provided, said silver-plated substrate 10 comprises electric silver layer 11, zinc coat 12, aluminum layer 13, insulating barrier 14 and heat radiating metallic layer 15 from top to bottom successively, said electric silver layer 11, zinc coat 12 and aluminum layer 13 forming circuit layers 50.Said aluminum layer 13 is insulated dielectric layer 30 and is divided into bulk; Divided aluminum layer 13 and electric silver layer 11, zinc coat 12 constitute divided circuit layer 50; Form circuit connection in series-parallel relation, particularly, said insulating medium layer 30 is the injection moulding bars that form through injection moulding; Said aluminum layer 13 is divided into bulk by the injection moulding bar, Gu brilliant bowl cup 20 is arranged on said silver-plated substrate 10.
Step S32, in scribbling the solid brilliant bowl cup 20 of crystal-bonding adhesive, arrange LED wafer 40,, solidify crystal-bonding adhesive, the LED wafer is fixed in the solid brilliant bowl cup 20 through suitable temperature baking.
Step S33, the two poles of the earth of using metal wire connection LED wafer 40 and the circuit layer 50 of silver-plated substrate 10, thereby the power circuit of formation LED wafer 40, the power circuit conducting makes LED wafer 40 electrified light emittings.
Step S34, in solid brilliant bowl cup, fill the fluorescent material of special ratios and the glue that mixes of organic siliconresin, formation silica gel layer 16, thus be packaged into MCOB light source with particular optical parameter.
Seeing also Fig. 4, is the manufacturing approach flow chart of silver-plated substrate in the LED encapsulating structure of the present invention, and the manufacturing step of said silver-plated substrate comprises:
Step S311, pressing plate: will and light source power is corresponding has and the insulating barrier 14 of certain conductive coefficient is sandwiched between aluminum layer 13 and the heat radiating metallic layer 15; To play heat conduction, thermoelectric buffer action; In this execution mode, this heat radiating metallic layer 15 is the aluminium sheet material.
Step S312, boring, injection moulding: the solid brilliant bowl cup and the injection moulding insulating medium layer 30 that get out predetermined number as requested form the injection moulding bar;
Step S313, zinc-plated, electricity silver: be covered with one deck zinc and silver on the aluminum layer surface successively.
Experimental data shows, the MCOB light source of the present invention of 5W, and its output voltage, when electric current is 36V, 140mA, colour temperature is that its luminous flux of light source of 6000K is 670Lm, and promptly light efficiency can reach 134Lm/w, and apparent finger is 73; Colour temperature is that its luminous flux of light source of 3000K is 668Lm, reaches light efficiency and can reach 133.6Lm/w, and apparent finger is 71.Above data show that the light source that LED encapsulating structure of the present invention forms has higher light efficiency compared to prior art.
The invention has the beneficial effects as follows: LED encapsulating structure of the present invention and manufacturing approach thereof, aluminum layer is divided into bulk through insulating medium layer, and divided aluminum layer and zinc coat and electric silver layer forming circuit layer, form series-parallel circuit.The present invention is a circuit with electric silver layer, increases the refraction of light, has improved light efficiency and thermal diffusivity; Improved spotlight effect through solid brilliant bowl cup.Therefore, the present invention has improved whole light efficiency, heat radiation and the life-span of light source, owing to there is not fixing circuit structure, therefore can realize freedom, circuit connection in series-parallel flexibly, and a many usefulness have strengthened the applicability of light source to market, and reduced cost.
The above is merely embodiments of the invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (6)
1. a LED encapsulating structure is characterized in that, comprises silver-plated substrate, solid brilliant bowl cup, insulating medium layer and is fixed on the LED wafer in the solid brilliant bowl cup, and said solid brilliant bowl cup is arranged on the said silver-plated substrate;
Said silver-plated substrate comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, wherein, and said electric silver layer, zinc coat and aluminum layer forming circuit layer;
Said aluminum layer is divided into bulk by said insulating medium layer, and the two poles of the earth of said LED wafer link to each other with circuit layer through metal wire respectively;
Said solid brilliant bowl cup is filled by silica gel layer, said silica gel layer with the LED wafer package in solid brilliant bowl cup.
2. a kind of LED encapsulating structure according to claim 1 is characterized in that,
Said insulating medium layer is formed by the injection moulding bar, and said aluminum layer is cut apart by said injection moulding bar.
3. a kind of LED encapsulating structure according to claim 1 is characterized in that,
Said solid brilliant bowl cup is through silver-plated substrate boring is formed.
4. a kind of LED encapsulating structure according to claim 1 is characterized in that,
The material of said silica gel layer is a fluorescent material and the glue that mixes of organic siliconresin.
5. the silver-plated substrate of a LED encapsulating structure; It is characterized in that; Said silver-plated substrate comprises electric silver layer, zinc coat, aluminum layer, insulating barrier and heat radiating metallic layer from top to bottom successively, Gu brilliant bowl cup is arranged on said silver-plated substrate, said aluminum layer is insulated dielectric layer and is divided into bulk; Said electric silver layer, zinc coat and aluminum layer forming circuit layer, said circuit layer are used for being electrically connected as circuit the two poles of the earth with the LED wafer.
6. the silver-plated substrate of a kind of LED encapsulating structure according to claim 5 is characterized in that,
Said insulating medium layer is formed by the injection moulding bar, and said aluminum layer is cut apart by said injection moulding bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210257849.8A CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210257849.8A CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
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| CN102800788A true CN102800788A (en) | 2012-11-28 |
| CN102800788B CN102800788B (en) | 2015-05-27 |
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| CN201210257849.8A Active CN102800788B (en) | 2012-07-23 | 2012-07-23 | Light-emitting diode (LED) packaging structure and silver plating substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109219238A (en) * | 2017-07-03 | 2019-01-15 | 张文耀 | Using silica gel plate as the circuit board of substrate and its manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022148A (en) * | 2007-01-11 | 2007-08-22 | 鹤山丽得电子实业有限公司 | Method for producing light-emitted diode package structure |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
| US20110116271A1 (en) * | 2009-11-17 | 2011-05-19 | Shunya Ide | Light emitting device and method for manufacturing the same |
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2012
- 2012-07-23 CN CN201210257849.8A patent/CN102800788B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022148A (en) * | 2007-01-11 | 2007-08-22 | 鹤山丽得电子实业有限公司 | Method for producing light-emitted diode package structure |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
| US20110116271A1 (en) * | 2009-11-17 | 2011-05-19 | Shunya Ide | Light emitting device and method for manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109219238A (en) * | 2017-07-03 | 2019-01-15 | 张文耀 | Using silica gel plate as the circuit board of substrate and its manufacturing method |
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| CN102800788B (en) | 2015-05-27 |
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Address after: 591 1st floor, tonglong 2nd Road, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Xiamen City, Fujian Province Patentee after: Xiamen langxing Technology Co., Ltd Address before: 591 1st floor, tonglong 2nd Road, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Xiamen City, Fujian Province Patentee before: XIAMEN LANGXING ENERGY SAVING LIGHTING Co.,Ltd. |
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