CN102683244A - 半导体装置用薄膜的制造方法 - Google Patents
半导体装置用薄膜的制造方法 Download PDFInfo
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- CN102683244A CN102683244A CN2012100618058A CN201210061805A CN102683244A CN 102683244 A CN102683244 A CN 102683244A CN 2012100618058 A CN2012100618058 A CN 2012100618058A CN 201210061805 A CN201210061805 A CN 201210061805A CN 102683244 A CN102683244 A CN 102683244A
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
本发明提供芯片接合薄膜位于切割薄膜的中心的半导体装置用薄膜的制造方法。一种半导体装置用薄膜的制造方法,所述半导体装置用薄膜通过切割薄膜、芯片接合薄膜和保护薄膜以该顺序层叠而得到,其包括:照射波长400~800nm的光线,基于所得到的光线透射率检测芯片接合薄膜的位置的工序,和基于检测到的芯片接合薄膜的位置,对所述切割薄膜进行冲裁的工序;设切割薄膜和保护薄膜的层叠部分的光线透射率为T1、设切割薄膜与芯片接合薄膜和保护薄膜的层叠部分的光线透射率为T2时,T2/T1为0.04以上。
Description
技术领域
本发明涉及半导体装置用薄膜的制造方法。
背景技术
以往,半导体晶片在预先以大面积制作后,切割(切断分离)为芯片状并移送到扩张工序。切割薄膜在该切割时用于固定半导体晶片。
固定到切割薄膜上的半导体晶片,在切割为芯片状并为了将各芯片之间分离而在扩张环上沿面方向同样地扩张后,进行拾取。
另外,以往提出了在切割工序中胶粘保持半导体晶片并且也提供安装工序所需的芯片固着用的芯片接合薄膜的切割薄膜(例如,参考专利文献1)。
上述的带有芯片接合薄膜的切割薄膜,例如,可以通过(1)制作芯片接合薄膜,并按照将要粘贴的半导体晶片的形状进行冲裁,(2)在切割薄膜上以规定的间隔层叠冲裁后的芯片接合薄膜,(3)再以芯片接合薄膜侧为粘贴面粘贴保护薄膜,(4)以芯片接合薄膜为中心对切割薄膜进行冲裁,并将保护薄膜剥离来得到。另外,例如,可以通过(1)制作芯片接合薄膜,并按照将要粘贴的半导体晶片的形状进行冲裁,(2)在切割薄膜上以规定的间隔层叠冲裁后的芯片接合薄膜,(3)以芯片接合薄膜为中心对切割薄膜进行冲裁来得到。作为以芯片接合薄膜为中心对切割薄膜进行冲裁的原因,是因为:通常切割环粘贴在切割薄膜的周缘部使用,当切割环接触到芯片接合薄膜时,切割环会受到污染。另外是因为:芯片接合薄膜不处于切割环薄膜的中心时,在晶片安装工序中,晶片与芯片接合薄膜会在位置偏移的状态下粘贴在一起。
现有技术文献
专利文献
专利文献1:日本特开昭60-57642号公报
发明内容
但是,现有制造方法中,有时难以以芯片接合薄膜为中心对切割薄膜准确地进行冲裁,因此存在引起带有芯片接合薄膜的切割薄膜的制造成品率下降的问题。
本发明鉴于所述问题而创立,其目的在于提供芯片接合薄膜处于切割薄膜的中心的半导体装置用薄膜的制造方法以及该半导体装置用薄膜。
本申请发明人为了解决所述现有问题,对半导体装置用薄膜的制造方法以及半导体装置用薄膜进行了研究。结果发现,通过采用下述的构成,可以提供芯片接合薄膜处于切割薄膜的中心的半导体装置用薄膜的制造方法、以及该半导体装置用薄膜,从而完成了本发明。
即,本发明的半导体装置用薄膜制造方法,为通过切割薄膜、芯片接合薄膜和保护薄膜以该顺序层叠而得到的半导体装置用薄膜的制造方法,其特征在于,所述半导体装置用薄膜的制造方法包括:制作切割薄膜的工序,制作芯片接合薄膜的工序,按照将要粘贴的半导体晶片的形状对所述芯片接合薄膜进行冲裁的工序,在所述切割薄膜上以规定的间隔粘贴多个所述芯片接合薄膜,并且将芯片接合薄膜侧作为粘贴面而粘贴保护薄膜的工序,照射波长400~800nm的光线,基于所得到的光线透射率检测芯片接合薄膜的位置的工序,和基于检测到的芯片接合薄膜的位置,对所述切割薄膜进行冲裁的工序;设所述切割薄膜和所述保护薄膜的层叠部分对波长400~800nm的光线透射率为T1、设所述切割薄膜与所述芯片接合薄膜和所述保护薄膜的层叠部分对波长400~800nm的光线透射率为T2时,下式(A)表示的T为4以上,
T=100-((T2/T1)×100) (A)。
根据所述构成,通过制作切割薄膜的工序、制作芯片接合薄膜的工序、将所述芯片接合薄膜按照将要粘贴的半导体晶片的形状进行冲裁的工序、在所述切割薄膜上以规定的间隔粘贴多个所述芯片接合薄膜以及以芯片接合薄膜侧为粘贴面粘贴保护薄膜的工序,成为在一个连续的切割薄膜与一个连续的保护薄膜之间,以规定的间隔粘贴有多个芯片接合薄膜的状态。
然后,照射波长400~800nm的光线,并基于所得到的光线透射率检测芯片接合薄膜的位置。具体而言,光线透射率以一定水平以上变化时,例如,光线透射率从光线透射率T1变化为光线透射率T2从而所述式(A)表示的T为4以上时,该部位作为芯片接合薄膜的一端被检测到。而且,基于所检测到的芯片接合薄膜的位置,对切割薄膜进行冲裁。该切割薄膜的冲裁工序,基于芯片接合薄膜的位置进行,因此可以使芯片接合薄膜位于被冲裁的各切割薄膜的中心。
可见,根据所述构成,可以制造芯片接合薄膜处于切割薄膜中心的半导体装置用薄膜。
所述构成中,优选所述光线透射率T1为2%~80%。
所述构成中,优选所述光线透射率T2为0.1%~70%。
附图说明
图1(a)是表示本发明的一个实施方式的半导体装置用薄膜的示意剖视图,(b)为其俯视图。
图2是表示图1(a)和图1(b)所示的半导体装置用薄膜的一部分的示意剖视图。
图3(a)、(b)是用于说明图1所示的半导体装置用薄膜的制造方法的示意剖视图。
图4是表示使用图1所示的半导体装置用薄膜制造的半导体装置的一例的示意剖视图。
标号说明
1 基材
2 粘合剂层
3 芯片接合薄膜
4 半导体晶片
5 半导体芯片
6 被粘物
7 焊线
8 密封树脂
10 半导体装置用薄膜
11 切割薄膜
14 保护薄膜
15 预切割前的半导体装置用薄膜
具体实施方式
(半导体装置用薄膜)
对于本发明的一个实施方式的半导体装置用薄膜,以下进行说明。图1(a)是表示本发明的一个实施方式的半导体装置用薄膜的示意剖视图,(b)为其俯视图。图2是表示图1(a)和图1(b)所示的半导体装置用薄膜的一部分的示意剖视图。
如图1(a)、图1(b)所示,半导体装置用薄膜10具有在长尺寸的保护薄膜14上层叠有俯视为圆形的切割薄膜11的构成。切割薄膜11具有在基材1上层叠有粘合剂层2的构成,在粘合剂层2上层叠有直径比切割薄膜11小的芯片接合薄膜3。切割薄膜11以使保护薄膜14与粘合剂层2和芯片接合薄膜3对向的方式层叠在保护薄膜14上。
设切割薄膜11与保护薄膜14的层叠部分对波长400~800nm的光线透射率为T1、设切割薄膜11与芯片接合薄膜3和保护薄膜14的层叠部分对波长400~800nm的光线透射率为T2时,下式(A)表示的T为4以上。所述T更优选为10以上。另外,所述T虽然越大越好,但是,例如可以设定为50以下、30以下。
T=100-((T2/T1)×100) (A)
半导体装置用薄膜10的制造如后所详述,首先在切割薄膜11上以规定的间隔粘贴按照将要粘贴的半导体晶片的形状冲裁出的多个芯片接合薄膜3,并且以芯片接合薄膜3侧为粘贴面粘贴到保护薄膜14上。由此,成为在一个连续的切割薄膜11与一个连续的保护薄膜14之间,以规定的间隔粘贴有多个芯片接合薄膜3的状态。然后,照射波长400~800nm的光线,并基于所得到的光线透射率检测芯片接合薄膜3的位置。具体而言,光线透射率以一定水平以上变化时,例如,光线透射率从光线透射率T1变化为光线透射率T2从而式(A)表示的T为4以上时,该部位作为芯片接合薄膜3的一端被检测到。而且,基于所检测到的芯片接合薄膜3的位置,对切割薄膜11进行冲裁。该切割薄膜11的冲裁工序,基于芯片接合薄膜3的位置进行,因此可以使芯片接合薄膜3位于被冲裁的各切割薄膜11的中心。半导体装置用薄膜10通过上述制造方法制造,所述T为4以上,因此芯片接合薄膜3位于切割薄膜11的中心。
光线透射率T 1优选为2%~80%,更优选2%~50%,进一步优选2%~20%,特别优选2%~10%。光线透射率T1为2%~80%时,易于使所述T为4以上。
光线透射率T2优选为0.1%~70%,更优选0.1%~40%,进一步优选0.1%~10%。光线透射率T2为0.1%~70%时,易于使所述T为4以上。
所述基材1优选使用具有紫外线透射性的基材,其作为切割薄膜11的强度母体。可以列举例如:聚烯烃如低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚酯如聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷树脂、金属(箔)、纸等。
另外,作为基材1的材料,可以列举所述树脂的交联体等聚合物。所述塑料薄膜可以不拉伸而使用,也可以根据需要进行单轴或双轴拉伸处理后使用。利用通过拉伸处理等而赋予了热收缩性的树脂片,通过在切割后使该基材1热收缩,可以减小粘合剂层2与芯片接合薄膜3的胶粘面积,从而可以容易地回收半导体芯片(半导体元件)。
另外,为了提高与邻接层的粘附性、保持性等,基材1的表面可以实施惯用的表面处理,例如,化学或物理处理如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离放射线处理等,利用底涂剂(例如后述的粘合物质)的涂布处理。所述基材1可以适当地选择使用同种或不同种类的材料,根据需要也可以使用将数种材料共混后的材料。
基材1的厚度,优选为20μm以上且200μm以下,更优选40μm以上且180μm以下,进一步优选60μm以上且170μm以下。通过将基材1的厚度设定为20μm以上且200μm以下,可以控制切割薄膜的光线透射率。
作为粘合剂层2的形成中使用的粘合剂,没有特别限制,例如,可以使用丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏胶粘剂。作为所述压敏胶粘剂,从半导体晶片或玻璃等避忌污染的电子部件的超纯水或醇等有机溶剂的清洁洗涤性等的观点考虑,优选以丙烯酸类聚合物为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物,可以列举例如:使用(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链或支链烷基酯等)和(甲基)丙烯酸环烷酯(例如,环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外,(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯,本发明的(甲基)全部表示相同的含义。
为了改善凝聚力、耐热性等,所述丙烯酸类聚合物根据需要可以含有与能够同所述(甲基)丙烯酸烷基酯或环烷酯共聚的其它单体成分对应的单元。作为这样的单体成分,可以列举例如:含羧基单体如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等;酸酐单体如马来酸酐、衣康酸酐等;含羟基单体如(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯等;含磺酸基单体如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧萘磺酸等;含磷酸基单体如丙烯酰磷酸-2-羟基乙酯等;丙烯酰胺、丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。
另外,为了进行交联,所述丙烯酸类聚合物根据需要也可以含有多官能单体等作为共聚用单体成分。作为这样的多官能单体,可以列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体可以使用一种或两种以上。多官能单体的使用量从粘合特性等观点考虑优选为全部单体成分的30重量%以下。
所述丙烯酸类聚合物可以通过将单一单体或两种以上单体的混合物聚合来得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止对洁净被粘物的污染等观点考虑,优选低分子量物质的含量少。从该点考虑,丙烯酸类聚合物的数均分子量优选为约30万以上,更优选约40万~约300万。
另外,为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量,所述粘合剂中也可以适当采用外部交联剂。外部交联方法的具体手段可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂使其反应的方法。使用外部交联剂时,其使用量根据与需要交联的基础聚合物的平衡以及作为粘合剂的使用用途适当确定。一般而言,相对于所述基础聚合物100重量份,优选配合约5重量份以下,更优选配合约0.1~约5重量份。另外,根据需要,在粘合剂中除所述成分以外也可以使用各种增粘剂、抗老化剂等添加剂。
粘合剂层2可以由辐射线固化型粘合剂形成。辐射线固化型粘合剂通过紫外线等辐射线的照射使交联度增大,从而可以容易地降低其粘合力。例如,通过仅对图2所示的粘合剂层2的与工件粘贴部分对应的部分2a照射辐射线,可以设置与部分2b的粘合力差。
另外,通过按照图2所示的芯片接合薄膜3使辐射线固化型粘合剂层2固化,可以容易地形成粘合力显著下降的所述部分2a。由于在固化且粘合力下降的所述部分2a上粘贴有芯片接合薄膜3,因此粘合剂层2的所述部分2a与芯片接合薄膜3的界面具有在拾取时容易剥离的性质。另一方面,未照射辐射线的部分具有充分的粘合力,形成所述部分2b。所述部分2b可以将贴片环(wafer ring)固定。
辐射线固化型粘合剂可以没有特别限制地使用具有碳碳双键等辐射线固化性官能团、并且显示粘合性的辐射线固化型粘合剂。作为辐射线固化型粘合剂,可以例示例如:在所述丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏粘合剂中配合有辐射线固化性的单体成分或低聚物成分的添加型辐射线固化型粘合剂。
作为用于配合的辐射线固化性单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,辐射线固化性低聚物成分可以列举聚氨酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量在约100~约30000的范围内是适当的。辐射线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类适当地确定能够降低粘合剂层的粘合力的量。一般而言,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约5重量份~约500重量份,优选约40重量份~约150重量份。
另外,作为辐射线固化型粘合剂,除了前面说明的添加型辐射线固化型粘合剂以外,还可以列举使用在聚合物侧链或主链中或者主链末端具有碳碳双键的聚合物作为基础聚合物的内在型辐射线固化型粘合剂。内在型辐射线固化型粘合剂无需含有或者多数不含有作为低分子量成分的低聚物成分等,因此低聚物成分等不会随时间推移在粘合剂中迁移,从而可以形成稳定的层结构的粘合剂层,因此优选。
所述具有碳碳双键的基础聚合物,可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物,优选以丙烯酸类聚合物作为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架,可以列举前面例示过的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制,可以采用各种方法,但是,将碳碳双键引入聚合物侧链的方法在分子设计上比较容易。可以列举例如:预先将具有官能团的单体与丙烯酸类聚合物共聚后,使具有能够与该官能团反应的官能团和碳碳双键的化合物在保持碳碳双键的辐射线固化性的情况下进行缩合或加成反应的方法。
作为这些官能团的组合例,可以列举例如:羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中考虑反应跟踪的容易性,优选羟基与异氰酸酯基的组合。另外,如果是通过这些官能团的组合而生成所述具有碳碳双键的丙烯酸类聚合物的组合,则官能团可以在丙烯酸类聚合物与所述化合物中的任意一方上,在所述的优选组合中,优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基的情况。此时,作为具有碳碳双键的异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基联苯酰异氰酸酯等。另外,作为丙烯酸类聚合物,可以使用将前面例示的含羟基单体或2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚类化合物等共聚而得到的聚合物。
所述内在型辐射线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合所述辐射线固化性单体成分或低聚物成分。辐射线固化性低聚物成分等相对于基础聚合物100重量份通常在30重量份的范围内,优选0~10重量份的范围。
所述辐射线固化型粘合剂在通过紫外线等固化时可以含有光聚合引发剂。作为光聚合引发剂,可以列举例如:α-酮醇类化合物如4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等;苯乙酮类化合物如甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-吗啉基)丙烷-1-酮等;苯偶姻醚类化合物如苯偶姻***、苯偶姻异丙醚、茴香偶姻甲基醚等;缩酮类化合物如联苯酰二甲基缩酮等;芳香族磺酰氯类化合物如2-萘磺酰氯等;光活性肟类化合物如1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等;二苯甲酮类化合物如二苯甲酮、苯甲酰苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等;噻吨酮类化合物如噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等;樟脑醌;卤代酮;酰基膦氧化物;酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约0.05重量份~约20重量份。
另外,作为辐射线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中所公开的、含有具有2个以上不饱和键的加成聚合性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物、和羰基化合物、有机硫化合物、过氧化物、胺、盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
所述辐射线固化型的粘合剂层2中,根据需要也可以含有通过照射辐射线而着色的化合物。通过在粘合剂层2中含有通过照射辐射线而着色的化合物,可以仅将照射辐射线的部分着色。即,可以将图2所示的与工件粘贴部分对应的粘合剂层2a着色。由此,可以通过肉眼直接判断粘合剂层2是否被照射了辐射线,可以容易识别工件粘贴部分,工件的粘贴也容易。另外,在利用光传感器等检测半导体元件时,其检测精度高,从而在半导体元件的拾取时不产生误操作。
通过照射辐射线而着色的化合物,为在照射辐射线前无色或浅色、但是通过照射辐射线而有色的化合物。作为所述化合物的优选具体例,可以列举隐色染料(ロイコ染料)。作为隐色染料,可以优选使用惯用的三苯基甲烷类、荧烷类、吩噻嗪类、金胺类、螺吡喃类隐色染料。具体地可以列举:3-[N-(对甲苯基氨基)]-7-苯胺基荧烷、3-[N-(对甲苯基)-N-甲基氨基]-7-苯胺基荧烷、3-[N-(对甲苯基)-N-乙基氨基]-7-苯胺基荧烷、3-二乙氨基-6-甲基-7-苯胺基荧烷、结晶紫内酯、4,4’,4”-三(二甲氨基)三苯基甲醇、4,4’,4”-三(二甲氨基)三苯基甲烷等。
作为优选与这些隐色染料一起使用的显色剂,可以列举一直以来使用的酚醛树脂的预聚物、芳香族羧酸衍生物、活性白土等电子受体,另外,在使色调变化时,可以将各种公知的发色剂组合使用。
这样的通过照射辐射线而着色的化合物,可以先溶解于有机溶剂等中后再包含在辐射线固化型粘合剂中,另外,也可以以细粉末形式包含在该粘合剂中。该化合物的使用比例希望在粘合剂层2中为10重量%以下,优选0.01~10重量%,更优选0.5~5重量%。该化合物的比例超过10重量%时,照射到粘合剂层2的辐射线被该化合物过度吸收,因此粘合剂层2的所述部分2a的固化不充分,有时粘合力下降不充分。另一方面,为了充分着色,优选将该化合物的比例设定为0.01重量%以上。
通过辐射线固化型粘合剂形成粘合剂层2的情况下,可以对粘合剂层2的一部分进行辐射线照射使得粘合剂层2中所述部分2a的粘合力<其它部分2b的粘合力。
作为在所述粘合剂层2中形成所述部分2a的方法,可以列举:在支撑基材1上形成辐射线固化型粘合剂层2后,对所述部分2a局部地照射辐射线使其固化的方法。局部的辐射线照射可以通过形成有与所述部分2a以外的部分对应的图案的光掩模来进行。另外,可以列举点状照射紫外线进行固化的方法等。辐射线固化型粘合剂层2的形成可以通过将设置在隔片上的辐射线固化型粘合剂层转印到支撑基材1上来进行。局部的辐射线照射也可以对设置在隔片上的辐射线固化型粘合剂层2进行。
另外,通过辐射线固化型粘合剂形成粘合剂层2的情况下,可以使用对支撑基材1的至少单面的、与所述部分2a对应的部分以外的部分的全部或局部进行遮光的基材,在该基材上形成辐射线固化型粘合剂层2后进行辐射线照射,使所述部分2a固化,从而形成粘合力下降的所述部分2a。作为遮光材料,可以通过印刷或蒸镀等在支撑薄膜上制作能够成为光掩模的材料。通过所述制造方法,可以有效地制造半导体装置用薄膜10。
另外,照射辐射线时因氧产生固化障碍的情况下,期望利用任意方法从辐射线固化型粘合剂层2的表面隔绝氧(空气)。可以列举例如:用隔片将所述粘合剂层2的表面覆盖的方法或者在氮气氛围中进行紫外线等辐射线的照射的方法等。
粘合剂层2的厚度没有特别限制,从同时实现防止芯片切割面的缺陷和胶粘层的固定保持等观点考虑,优选为约1μm至约50μm。优选2μm~30μm、更优选5μm~25μm。
芯片接合薄膜3的层叠结构,如本实施方式所示,可以列举仅由胶粘剂层的单层构成的结构或者在芯材的单面或两面形成有胶粘剂层的多层结构。作为所述芯材,可以列举例如:薄膜(例如,聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
作为构成芯片接合薄膜3的胶粘剂组合物,可以列举将热塑性树脂和热固性树脂组合使用而得到的组合物。
作为所述热固性树脂,可以列举:酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、聚硅氧烷树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外,作为环氧树脂的固化剂,优选酚醛树脂。
所述环氧树脂,只要是通常作为胶粘剂组合物使用的环氧树脂则没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三(羟苯基)甲烷型、四(羟苯基)乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三(羟苯基)甲烷型环氧树脂或四(羟苯基)乙烷型环氧树脂。这是因为:这些环氧树脂与作为固化剂的酚醛树脂的反应性好,并且耐热性等优良。
所述酚醛树脂作为所述环氧树脂的固化剂起作用,可以列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、苯酚联苯树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶酚醛树脂(レゾ一ル)型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚醛树脂可以单独使用或者两种以上组合使用。这些酚醛树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚醛树脂的配合比例,例如,以相对于所述环氧树脂成分中的环氧基1当量酚醛树脂中的羟基为0.5~2.0当量的方式进行配合是适当的。另外,更合适的是0.8~1.2当量。即,这是因为:两者的配合比例在所述范围以外时,不能进行充分的固化反应,从而环氧树脂固化物的特性容易劣化。
作为所述热塑性树脂,可以列举:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6或尼龙66等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者含氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中,特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸类树脂。
作为所述丙烯酸类树脂,没有特别限制,可以列举:以一种或两种以上具有碳原子数30以下、特别是碳原子数4~18的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯为成分的聚合物(丙烯酸类聚合物)等。作为所述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者二十烷基等。
另外,作为用于形成所述聚合物的其它单体,没有特别限制,可以列举例如:含缩水甘油基单体如丙烯酸缩水甘油酯、甲基丙烯酸缩水甘油酯等;含羧基单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等;酸酐单体如马来酸酐或衣康酸酐等;含羟基单体如(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸(4-羟甲基环己基)甲酯等;含磺酸基单体如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等;含磷酸基单体如丙烯酰磷酸-2-羟基乙酯;苯乙烯单体;或者丙烯腈。
另外,芯片接合薄膜3中,根据其用途可以适当配合填料。填料的配合可以赋予导电性或提高导热性、调节弹性模量等。作为所述填料,可以列举无机填料和有机填料,从提高操作性、提高热电导性、调节熔融粘度、赋予触变性等特性的观点考虑,优选无机填料。作为所述无机填料,没有特别限制,可以列举例如:氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶二氧化硅、非晶二氧化硅等。这些填料可以单独使用或者两种以上组合使用。从提高热电导性的观点考虑,优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅。另外,从上述各特性平衡良好的观点考虑,优选结晶二氧化硅或非晶二氧化硅。另外,为了赋予导电性、提高热电导性等,也可以使用导电性物质(导电填料)作为无机填料。作为导电填料,可以列举将银、铝、金、铜、镍、导电性合金等形成为球形、针状、薄片状而得到的金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。所述填料的平均粒径可以为0.1~80μm。另外,所述填料的平均粒径例如为通过光度式粒度分布计(HORIBA制造,装置名:LA-910)求出的值。
所述填料的配合量,当设热塑性成分的重量为X、设热固性成分的重量为Y、设填料的重量为Z时,Z/(X+Y+Z)优选为0.05以上且0.7以下,更优选0.05以上且0.5以下,进一步优选0.05以上且0.3以下。通过将所述Z/(X+Y+Z)调节为0.05以上且0.7以下,可以控制芯片接合薄膜的光线透射率。
另外,芯片接合薄膜3中,除了所述填料以外,根据需要还可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。作为所述阻燃剂,可以列举例如:三氧化二锑、五氧化二锑、溴化环氧树脂等。这些阻燃剂可以单独使用或者两种以上组合使用。作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些离子捕获剂可以单独使用或者两种以上组合使用。
芯片接合薄膜3的厚度(层叠体的情况下为总厚度)没有特别限制,例如,可以从1~200μm的范围内选择,优选5~100μm,更优选10~80μm。
如上所述,设切割薄膜11与保护薄膜14的层叠部分对波长400~800nm的光线透射率为T1、设切割薄膜11与芯片接合薄膜3和保护薄膜14的层叠部分对波长400~800nm的光线透射率为T2时,上述(A)表示的T为4以上。
为了使所述T为4以上,芯片接合薄膜3的光线透射率优选为0.1%~95%,更优选0.1%~70%,进一步优选0.1%~50%。芯片接合薄膜3的光线透射率可以通过环氧树脂、酚醛树脂、填料的含量进行控制。
保护薄膜14具有在供给实际应用之前作为保护芯片接合薄膜3的保护材料的功能等。另外,保护薄膜14也可以作为将芯片接合薄膜3向粘合剂层2转印时的支撑基材使用。保护薄膜14在向芯片接合薄膜3上粘贴工件时剥离。作为保护薄膜14的材质,可以列举聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剥离剂、长链烷基丙烯酸酯型剥离剂等剥离剂进行表面涂布后的塑料薄膜或纸等。
以下,对本实施方式的半导体装置用薄膜10的制造方法进行说明。图3(a)和图3(b)是用于说明半导体装置用薄膜10的制造方法的示意剖视图。首先,基材1可以通过现有公知的制膜方法制膜。作为该制膜方法,可以例示例如:压延制膜法、有机溶剂中的流延法、密闭体系中的吹塑挤出法、T形模头挤出法、共挤出法、干式层压法等。
接着,在基材1上涂布粘合剂组合物溶液形成涂膜,然后在规定条件下将该涂膜干燥(根据需要进行加热交联)而形成粘合剂层2。作为涂布方法,没有特别限制可以列举例如:辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,可以在例如:在干燥温度80~150℃、干燥时间0.5~5小时的范围内进行。另外,也可以在隔片上涂布粘合剂组合物形成涂膜后在所述干燥条件下将涂膜干燥来形成粘合剂层2。然后,将粘合剂层2与隔片一起粘贴到基材1上。由此,制作切割薄膜11。
芯片接合薄膜3的制作工序如下所述进行。即,在基材隔片上以达到规定厚度的方式涂布用于形成芯片接合薄膜3的胶粘剂组合物溶液形成涂膜。该胶粘剂组合物溶液中,如前所述,配合有所述胶粘剂组合物、填料、其它各种添加剂等。然后,在规定条件下将涂膜干燥,形成芯片接合薄膜3。作为涂布方法没有特别限制,可以列举例如:辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,可以根据涂膜的厚度、材料等适当设定。具体而言,例如在干燥温度70~160℃、干燥时间1~5分钟的范围内进行。
然后,将芯片接合薄膜3按照将要粘贴的半导体晶片的形状进行冲裁,并以规定的间隔粘贴到切割薄膜11上,并且以芯片接合薄膜3为粘贴面粘贴保护薄膜14。由此,成为在一个连续的切割薄膜11与一个连续的保护薄膜14之间以规定的间隔粘贴有多个芯片接合薄膜3的状态。另外,图3(a)中将其一部分扩大表示。
切割薄膜11与芯片接合薄膜3的粘贴例如通过压接进行。此时,层压温度没有特别限制,通常优选30~80℃,更优选30~60℃,特别优选30~50℃。另外,线压没有特别限制,通常优选0.1~20kgf/cm,更优选1~10kgf/cm。
另外,覆盖薄膜14的所述粘贴,优选通过压接进行。此时,层压温度没有特别限制,通常优选20~80℃,更优选20~60℃,特别优选20~50℃。另外,线压也没有特别限制,通常优选0.1~20kgf/cm,更优选0.2~10kgf/cm。
另外,作为所述隔片没有特别限制,可以使用现有公知的经脱模处理后的薄膜。作为构成经脱模处理后的薄膜的材料,没有特别限制,可以采用现有公知的材料。具体而言,可以列举例如:聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剥离剂、长链烷基丙烯酸酯型剥离剂等剥离剂进行表面涂布后的塑料薄膜或纸等。
然后,预切割前的半导体装置用薄膜15沿一定方向(图3(a)中为左向)绕出,并将薄膜检测用光L照射到预切割前的半导体装置用薄膜15上。图3(a)中,光L透过切割薄膜11与保护薄膜14的层叠部分,透射的光L通过未图示的传感器检测,计算光线透射率。此时的光线透射率为光线透射率T1。
然后,将预切割前的半导体装置用薄膜15进一步绕出时,如图3(b)所示,光L透过切割薄膜11与芯片接合薄膜3以及保护薄膜14的层叠部分。透射的光L通过未图示的传感器检测,计算光线透射率。此时的光线透射率为光线透射率T2。
薄膜检测用光优选波长400~800nm,更优选波长450~750nm,进一步优选波长500~700nm。
对于传感器而言,在光线透射率以一定水平以上变化时、即光线透射率从T1变化为光线透射率T2从而所述式(A)表示的T为4以上时,将该部位作为芯片接合薄膜3的一端检测到。由此,检测到芯片接合薄膜3的位置。而且,基于所检测到的芯片接合薄膜3的位置,以芯片接合薄膜3位于切割薄膜11的中心的方式进行冲裁。另外,被冲裁的切割薄膜11的直径大于芯片接合薄膜3的直径。由此,可以制造半导体装置用薄膜10。
(半导体装置的制造方法)
以下,以使用半导体装置用薄膜10的情况为例对半导体装置的制造方法进行说明。图4是表示通过图1所示的半导体装置薄膜中的胶粘剂层安装半导体芯片的例子的示意剖视图。
首先,从保护薄膜14上将带有芯片接合薄膜3的切割薄膜11剥离并压接半导体晶片4(粘贴工序)。本工序利用压接辊等挤压手段挤压来进行。安装时的粘贴温度没有特别限制,优选例如在20~80℃的范围内。
然后,进行半导体晶片4的切割。由此,将半导体晶片4切割为规定尺寸而小片化,制作半导体芯片5。切割例如按照常规方法从半导体晶片4的电路面一侧进行。另外,本工序中,例如,可以采用切入到芯片接合薄膜3的、称为全切割的切割方式等。本工序中使用的切割装置没有特别限制,可以采用现有公知的切割装置。另外,半导体晶片4由带有芯片接合薄膜3的切割薄膜11胶粘固定,因此可以抑制芯片缺损或芯片飞散,并且可以抑制半导体晶片4的破损。
为了剥离由带有芯片接合薄膜3的切割薄膜11胶粘固定的半导体芯片5,进行半导体芯片5的拾取。拾取方法没有特别限制,可以采用现有公知的各种方法。可以列举例如:用针将各个半导体芯片5从切割薄膜11一侧上推,并利用拾取装置拾取上推的半导体芯片5的方法等。
在此,粘合剂层2为紫外线固化型的情况下,在对该粘合剂层2照射紫外线后进行拾取。由此,粘合剂层2对芯片接合薄膜3的粘合力下降,使半导体芯片5容易剥离。结果,可以在不损伤半导体芯片5的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制,可以根据需要适当设定。另外,作为紫外线照射时使用的光源,可以使用所述的光源。
拾取的半导体芯片5通过芯片接合薄膜3胶粘固定到被粘物6上(芯片接合)。作为被粘物6,可以列举引线框、TAB薄膜、衬底或者独立制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物,也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底,可以使用现有公知的衬底。另外,所述引线框可以使用Cu引线框、42合金引线框等金属引线框或包含玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等的有机衬底。但是,本发明不限于此,也包含安装半导体元件并与半导体元件电连接后可以使用的电路衬底。
芯片接合薄膜3为热固化型时,通过加热固化,将半导体芯片5胶粘固定在被粘物6上,使耐热强度提高。可以在加热温度为80~200℃、优选100~175℃、更优选100~140℃下进行。另外,可以在加热时间为0.1~24小时、优选0.1~3小时、更优选0.2~1小时下进行。另外,通过芯片接合薄膜3将半导体芯片5胶粘固定到衬底等上而得到的材料可以供给回流焊接工序。
热固化后的芯片接合薄膜3对被粘物6的剪切胶粘力优选为0.2MPa以上,更优选0.2~10MPa。芯片接合薄膜3的剪切胶粘力为至少0.2MPa以上时,在丝焊工序时,不会因该工序中的超声波振动或加热而在芯片接合薄膜3与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即,半导体元件不会因丝焊时的超声波振动而活动,由此,可以防止丝焊的成功率下降。
另外,本实施方式的半导体装置的制造方法,可以在不经过芯片接合薄膜3的利用加热处理进行的热固化工序的情况下进行丝焊,再用密封树脂将半导体芯片5密封,并将该密封树脂后固化。此时,芯片接合薄膜3暂时固着时对被粘物6的剪切胶粘力优选为0.2MPa以上,更优选0.2~10MPa。芯片接合薄膜3暂时固着时的剪切胶粘力为至少0.2MPa以上时,即使在不经过加热工序的情况下进行丝焊工序,也不会因该工序中的超声波振动或加热而在芯片接合薄膜3与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即,半导体元件不会因丝焊时的超声波振动而活动,由此,可以防止丝焊的成功率下降。
所述丝焊是利用焊线7将被粘物6的端子部(内部引线)的末端与半导体芯片5上的电极焊盘(未图示)电连接的工序。作为所述焊线7,可以使用例如:金线、铝线或铜线等。进行丝焊时的温度在80~250℃、优选80~220℃的范围内进行。另外,其加热时间进行几秒~几分钟。线路连接是在所述温度范围内加热的状态下,通过组合使用超声波振动能和施加的压力而产生的压接能来进行。本工序可以在不进行芯片接合薄膜3的热固化的情况下进行。
所述密封工序是利用密封树脂8将半导体芯片5密封的工序。本工序是为了保护搭载在被粘物6上的半导体芯片5或焊线7而进行的。本工序通过用模具将密封用的树脂成型来进行。作为密封树脂8,例如可以使用环氧类树脂。树脂密封时的加热温度通常在175℃下进行60~90秒,但是,本发明不限于此,例如,也可以在165~185℃下固化几分钟。由此,在使密封树脂固化的同时通过芯片接合薄膜3将半导体芯片5与被粘物6固着。即,本发明中,即使在不进行后述的后固化工序的情况下,本工序中也可以利用芯片接合薄膜3进行固着,从而可以有助于减少制造工序数及缩短半导体装置的制造时间。
所述后固化工序中,使在所述密封工序中固化不足的密封树脂8完全固化。即使在密封工序中芯片接合薄膜3未完全热固化的情况下,在本工序中也可以与密封树脂8一起实现芯片接合薄膜3的完全热固化。本工序中的加热温度因密封树脂的种类而异,例如,在165~185℃的范围内,加热时间为约0.5小时~约8小时。
实施例
以下,例示性地详细说明本发明的优选实施例。但是,该实施例中记载的材料、配合量等如果不是特别限定的记载,则本发明的要旨不仅仅限于此。另外,以下提到“份”时是指“重量份”。
<芯片接合薄膜的制作>
(制造例1)
将环氧树脂(JER株式会社制造,エピコ一ト1004)12份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)13份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制造,SO-25R)30份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜A。
(制造例2)
将环氧树脂(JER株式会社制造,エピコ一ト1004)48份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)51份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制造,SO-25R)74份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜B。
(制造例3)
将环氧树脂(JER株式会社制造,エピコ一ト1004)193份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)207份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制造,SO-25R)195份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜C。
(制造例4)
将环氧树脂(JER株式会社制造,エピコ一ト1004)2份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)2份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制造,SO-25R)10份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜D。
(制造例5)
将环氧树脂(JER株式会社制造,エピコ一ト1004)4份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)4份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制,SO-25R)16份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜E。
(制造例6)
将环氧树脂(JER株式会社制造,エピコ一ト1004)7份、酚醛树脂(三井化学株式会社制造,ミレツクスXLC-4L)7份、以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツク株式会社制造,SG-708-6)100份、作为填料的球形二氧化硅(アドマテツクス株式会社制造,SO-25R)23份溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度20μm的芯片接合薄膜F。
(芯片接合薄膜的光线透射率的测定)
测定由制造例1~6制作的芯片接合薄膜A~F的光线透射率。测定方法与下述的(光线透射率T1以及光线透射率T2的测定)相同。结果如表1所示。
表1
制造例1 | 制造例2 | 制造例3 | 制造例4 | 制造例5 | 制造例6 | |
芯片接合薄膜的光线透射率(%) | 70 | 45 | 5 | 90 | 80 | 75 |
<切割薄膜的制作>
(制造例7)
在具有冷凝管、氮气引入管、温度计和搅拌装置的反应容器中,加入丙烯酸-2-乙基己酯(以下也称为“2EHA”)86重量份、丙烯酸-2-羟基乙酯(以下也称为“HEA”)14重量份、过氧化苯甲酰0.2重量份以及甲苯65重量份,在氮气流中在61℃进行6小时的聚合处理,得到重均分子量35~100万的丙烯酸类聚合物。在该丙烯酸类聚合物中加入2-甲基丙烯酰氧乙基异氰酸酯(以下也称为“MOI”)15重量份,在空气气流中在50℃进行48小时加成反应处理,得到丙烯酸类聚合物X。
然后,相对于100重量份丙烯酸类聚合物X,加入异氰酸酯类交联剂(コロネ一トL,日本聚氨酯工业株式会社制造)8份、以及光聚合引发剂(イルガキユア651,汽巴精化株式会社制造)5份到作为溶剂的甲苯10重量份中,制作粘合剂溶液。将前面制备的粘合剂溶液涂布到PET剥离衬垫的经聚硅氧烷处理后的面上,在120℃加热交联2分钟,形成厚度10μm的粘合剂层前体。然后,在该粘合剂前体表面粘贴厚度100μm的聚烯烃薄膜。然后,在50℃保存24小时。由此,制作切割薄膜A。
<保护薄膜的准备>
作为保护薄膜,准备38μm的聚对苯二甲酸乙二醇酯薄膜(三菱树脂株式会社制造,ダイアホイルMRA)(以下也称为保护薄膜A)。
<半导体装置用薄膜的制作>
(实施例1)
使用切割薄膜A、芯片接合薄膜A、保护薄膜A,制作半导体装置用薄膜。半导体装置用薄膜的制作中,使用预切割装置(ソルテツク株式会社制造,SRD im-W500),并设定为10m/分钟。另外,传感器将KEYENCE株式会社制造的CZ-40设定为C+I模式后使用。将其作为实施例1的半导体装置用薄膜。
(实施例2)
除了使用切割薄膜A、芯片接合薄膜B和保护薄膜A以外,与实施例1同样操作,制作实施例2的半导体装置用薄膜。
(实施例3)
除了使用切割薄膜A、芯片接合薄膜C和保护薄膜A以外,与实施例1同样操作,制作实施例3的半导体装置用薄膜。
(比较例1)
除了使用切割薄膜A、芯片接合薄膜D和保护薄膜A以外,与实施例1同样操作,制作比较例1的半导体装置用薄膜。
(比较例2)
除了使用切割薄膜A、芯片接合薄膜E和保护薄膜A以外,与实施例1同样操作,制作比较例2的半导体装置用薄膜。
(比较例3)
除了使用切割薄膜A、芯片接合薄膜F和保护薄膜A以外,与实施例1同样操作,制作比较例3的半导体装置用薄膜。
(光线透射率T1和光线透射率T2的测定)
在切割薄膜与保护薄膜的层叠部分的光线透射率T1以及切割薄膜和芯片接合薄膜和保护薄膜的层叠部分的光线透射率T2的测定中,使用日本分光公司制造的分光光度计(制品名“V-670”),将测定模式设定为%T(透射率测定)、测定波长区域设定为190~800nm来进行。将此时的波长650nm下的透射率作为测定值。结果如表2所示。另外,表2中也一并示出了由所述式(A)表示的T。
(成品率的确认)
使用实施例以及比较例的半导体装置用薄膜,进行以下的成品率确认试验。
首先,将带有芯片接合薄膜的切割薄膜从保护薄膜上剥离。然后,在带有芯片接合薄膜的切割薄膜的芯片接合薄膜上,压接半导体晶片。然后,粘贴切割环。所述试验使用日东精机株式会社制造的MA-3000(III)进行,条件为10mm/秒、50℃。所述试验对100片带有芯片接合薄膜的切割薄膜进行,并对在切割环上附着有芯片接合薄膜从而切割环受到污染的片数进行计数。结果如表2所示。另外,在表2中一并示出了切割环未受到芯片接合薄膜污染的概率(成品率(%))。另外,将未确认到切割环的污染的情况评价为○、将确认到即使一片切割环的污染的情况评价为×。评价结果也一并示于表2中。另外,切割环未被污染是指半导体晶片与芯片接合薄膜在没有位置偏移的情况下粘贴的情况。
表2
实施例1 | 实施例2 | 实施例3 | 比较例1 | 比较例2 | 比较例3 | |
光线透射率T1(%) | 4.44 | 4.44 | 4.44 | 4.44 | 4.44 | 4.44 |
光线透射率T2(%) | 4.25 | 3.99 | 3.10 | 4.42 | 4.39 | 4.30 |
T值 | 4 | 10 | 30 | 0.5 | 1 | 3 |
切割环污染片数 | 0/100 | 0/100 | 0/100 | 56/100 | 18/100 | 4/100 |
成品率(%) | 100 | 100 | 100 | 44 | 82 | 96 |
是否合格判断 | ○ | ○ | ○ | × | × | × |
(结果)
制造光线透射率T1与T2的差别大、所述T值为4以上的实施例1~3的半导体装置用薄膜并使用时,在将半导体晶片粘贴到芯片接合薄膜上时,可以抑制切割环受到污染。
Claims (3)
1.一种半导体装置用薄膜的制造方法,所述半导体装置用薄膜通过切割薄膜、芯片接合薄膜和保护薄膜以该顺序层叠而得到,其特征在于,
设所述切割薄膜和所述保护薄膜的层叠部分对波长400~800nm的光线透射率为T1、设所述切割薄膜与所述芯片接合薄膜和所述保护薄膜的层叠部分对波长400~800nm的光线透射率为T2时,下式(A)表示的T为4以上,
T=100-((T2/T1)×100) (A)
所述半导体装置用薄膜的制造方法包括:
制作切割薄膜的工序,
制作芯片接合薄膜的工序,
按照将要粘贴的半导体晶片的形状对所述芯片接合薄膜进行冲裁的工序,
在所述切割薄膜上以规定的间隔粘贴多个所述芯片接合薄膜,并且将芯片接合薄膜侧作为粘贴面而粘贴保护薄膜的工序,
照射波长400~800nm的光线,基于所得到的光线透射率检测芯片接合薄膜的位置的工序,和
基于检测到的芯片接合薄膜的位置,对所述切割薄膜进行冲裁的工序。
2.如权利要求1所述的半导体装置用薄膜的制造方法,其特征在于,
所述光线透射率T1为2%~80%。
3.如权利要求1或2所述的半导体装置用薄膜的制造方法,其特征在于,
所述光线透射率T2为0.1%~70%。
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TWI666290B (zh) * | 2014-03-31 | 2019-07-21 | 日商日東電工股份有限公司 | 黏晶(die bond)薄膜、附有切割片之黏晶薄膜、半導體裝置、及半導體裝置之製造方法 |
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CN105027266A (zh) * | 2013-03-04 | 2015-11-04 | 日东电工株式会社 | 半导体装置的制造方法、片状树脂组合物及切割胶带一体型片状树脂组合物 |
US11277909B2 (en) * | 2019-08-30 | 2022-03-15 | Ttm Technologies Inc. | Three-dimensional circuit assembly with composite bonded encapsulation |
CN115315785A (zh) * | 2020-03-27 | 2022-11-08 | 琳得科株式会社 | 半导体装置制造用片 |
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