JP5023225B1 - 半導体装置用フィルムの製造方法 - Google Patents
半導体装置用フィルムの製造方法 Download PDFInfo
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- JP5023225B1 JP5023225B1 JP2011052973A JP2011052973A JP5023225B1 JP 5023225 B1 JP5023225 B1 JP 5023225B1 JP 2011052973 A JP2011052973 A JP 2011052973A JP 2011052973 A JP2011052973 A JP 2011052973A JP 5023225 B1 JP5023225 B1 JP 5023225B1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】 ダイシングフィルムとダイボンドフィルムと保護フィルムとがこの順で積層された半導体装置用フィルムの製造方法であって、波長400〜800nmの光線を照射し、得られる光線透過率に基づいてダイボンドフィルムの位置を検出する工程と、検出したダイボンドフィルムの位置に基づいて、ダイシングフィルムを打ち抜く工程とを具備し、ダイシングフィルムと保護フィルムとの積層部分の光線透過率をT1とし、ダイシングフィルムとダイボンドフィルムと保護フィルムとの積層部分の光線透過率をT2としたとき、T2/T1が0.04以上である半導体装置用フィルムの製造方法。
【選択図】 図1
Description
T=100−((T2/T1)×100)・・・・・・式(A)
次に、波長400〜800nmの光線を照射し、得られる光線透過率に基づいてダイボンドフィルムの位置が検出される。具体的には、光線透過率が一定以上変化したとき、例えば、光線透過率が、光線透過率T1から光線透過率T2に変化して、前記式(A)にて示されるTが4以上となったとき、その箇所がダイボンドフィルムの一端であると検出される。そして、検出したダイボンドフィルムの位置に基づいて、ダイシングフィルムが打ち抜かれる。このダイシングフィルムの打ち抜き工程は、ダイボンドフィルムの位置に基づいて行われるため、ダイボンドフィルムを、打ち抜かれる各ダイシングフィルムの中心に位置させることができる。
このように、前記構成によれば、ダイボンドフィルムがダイシングフィルムの中心にある半導体装置用フィルムを製造することができる。
本発明の一実施形態に係る半導体装置用フィルムについて、以下に説明する。図1(a)は、本発明の一実施形態に係る半導体装置用フィルムを示す断面模式図であり、図1(b)は、その平面図である。図2は、図1(a)及び図1(b)に示した半導体装置用フィルムの一部を示す断面模式図である。
T=100−((T2/T1)×100)・・・・・・式(A)
また、基材1の表面は、隣接する層との密着性、保持性等を高める為、慣用の表面処理、例えば、クロム酸処理、オゾン暴露、火炎暴露、高圧電撃暴露、イオン化放射線処理等の化学的又は物理的処理、下塗剤(例えば、後述する粘着物質)によるコーティング処理を施すことができる。前記基材1は、同種又は異種のものを適宜に選択して使用することができ、必要に応じて数種をブレンドしたものを用いることができる。
前記Tを4以上とするためには、ダイボンドフィルム3の光線透過率が0.1〜95%であることが好ましく、0.1〜70%であることがより好ましく、0.1〜50%であることがさらに好ましい。ダイボンドフィルム3の光線透過率は、エポキシ樹脂、フェノール樹脂、フィラーの含有量によりコントロールすることができる。
以下では、半導体装置用フィルム10を用いた場合を例にして半導体装置の製造方法について説明する。図4は、図1に示した半導体装置用フィルムに於ける接着剤層を介して半導体チップを実装した例を示す断面模式図である。
(製造例1)
エポキシ樹脂(JER(株)製、エピコート1004)12部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)13部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)30部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、エピコート1004)48部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)51部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)74部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、エピコート1004)193部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)207部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)195部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、エピコート1004)2部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)2部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)10部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、エピコート1004)4部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)4部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)16部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、エピコート1004)7部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)7部、アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(ナガセケムテック社(株)製、SG−708−6)100部、フィラーとしての球状シリカ(アドマテックス(株)製、SO−25R)23部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
製造例1〜6により作製したダイボンドフィルムA〜Fの光線透過率を測定した。測定方法は、下記の(光線透過率T1、及び、光線透過率T2の測定)と同様とした。結果を表1に示す。
(製造例7)
冷却管、窒素導入管、温度計、及び、撹拌装置を備えた反応容器に、アクリル酸−2−エチルヘキシル(以下、「2EHA」ともいう。)86重量部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」ともいう。)14重量部、過酸化ベンゾイル0.2重量部、及び、トルエン65重量部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量35〜100万のアクリル系ポリマーを得た。このアクリル系ポリマーに2−メタクリロイルオキシエチルイソシアネート(以下、「MOI」ともいう。)15重量部を加え、空気気流中で50℃にて48時間、付加反応処理をし、アクリル系ポリマーXを得た。
次に、アクリル系ポリマーX100重量部に対し、イソシアネート系架橋剤(コロネートL、日本ポリウレタン)8部、及び光重合開始剤(イルガキュア651、チバスペシャルティー・ケミカルズ社製)5部を、溶媒としてのトルエン10重量部に加えて、粘着剤溶液を作製した。前記で調整した粘着剤溶液を、PET剥離ライナーのシリコーン処理を施した面上に塗布し、120℃で2分間加熱架橋して、厚さ10μmの粘着剤層前躯体を形成した。次いで当該粘着剤全躯体表面に厚さ100μmのポリオレフィンフィルムを貼り合わせた。その後、50℃にて24時間保存をした。これにより、ダイシングフィルムAを作製した。
保護フィルムとして、38μmのポリエチレンテレフタレートフィルム(三菱樹脂(株)製 ダイアホイルMRA)を準備した(以下、保護フィルムAともいう)。
(実施例1)
ダイシングフィルムAと、ダイボンドフィルムAと、保護フィルムAとを用い、半導体装置用フィルムを作製した。半導体装置用フィルムの作製は、プリカット装置(ソルテック工業(株)社製 SRDim-W500)を用いて、設定を10m/minとした。また、センサーには、KEYENCE(株)製のCZ-40をC+Iモード設定にて用いた。これを実施例1に係る半導体装置用フィルムとした。
ダイシングフィルムAと、ダイボンドフィルムBと、保護フィルムAとを用いたこと以外は、実施例1と同様にして、実施例2に係る半導体装置用フィルムを作製した。
ダイシングフィルムAと、ダイボンドフィルムCと、保護フィルムAとを用いたこと以外は、実施例1と同様にして、実施例3に係る半導体装置用フィルムを作製した。
ダイシングフィルムAと、ダイボンドフィルムDと、保護フィルムAとを用いたこと以外は、実施例1と同様にして、比較例1に係る半導体装置用フィルムを作製した。
ダイシングフィルムAと、ダイボンドフィルムEと、保護フィルムAとを用いたこと以外は、実施例1と同様にして、比較例2に係る半導体装置用フィルムを作製した。
ダイシングフィルムAと、ダイボンドフィルムFと、保護フィルムAとを用いたこと以外は、実施例1と同様にして、比較例3に係る半導体装置用フィルムを作製した。
ダイシングフィルムと保護フィルムとの積層部分の光線透過率T1、及び、ダイシングフィルムとダイボンドフィルムと保護フィルムとの積層部分の光線透過率T2の測定には、日本分光社製の分光光度計(製品名「V−670」)を用い、測定モードを%T(透過率測定)、測定波長領域を190〜800nmとして行った。その際の波長650nmでの透過率を測定値とした。結果を表2に示す。また、表2には、前記式(A)にて示されるTも合わせて示した。
実施例、及び、比較例の半導体装置用フィルムを用いて、以下の歩留りの確認試験を行った。
まず、ダイボンドフィルム付きのダイシングフィルムを保護フィルムから剥離した。次に、ダイボンドフィルム付きのダイシングフィルムのダイボンドフィルム上に、半導体ウェハを圧着した。その後、ダイシングリングを貼り付けた。上記試験は、日東精機(株)製のMA-3000(III)を用いて行い、条件は10mm/sec、50℃とした。上記試験を100枚のダイボンドフィルム付きのダイシングフィルムについて行い、ダイシングリングにダイボンドフィルムが付着し、ダイシングリングが汚染された枚数をカウントした。結果を表2に示す。また、ダイシングリングがダイボンドフィルムにより汚染されなかった確率(歩留り(%))も合わせて表2に示した。また、ダイシングリングの汚染が確認されなかった場合を○、ダイシングリングの汚染が1枚でも確認された場合を×として評価した。評価結果も合わせて表2に示した。なお、ダイシングリングが汚染されていないことは、半導体ウェハとダイボンドフィルムとが位置ずれすることなく貼り合わせられていることを意味する。
光線透過率T1とT2との差が大きく、前記Tの値が4以上である実施例1〜3の半導体装置用フィルムを製造し、これらを用いれば、半導体ウェハをダイボンドフィルムに貼り付ける際に、ダイシングリングが汚染されることを抑制することができた。
2 粘着剤層
3 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
10 半導体装置用フィルム
11 ダイシングフィルム
14 保護フィルム
15 プリカット前の半導体装置用フィルム
Claims (3)
- ダイシングフィルムとダイボンドフィルムと保護フィルムとがこの順で積層された半導体装置用フィルムの製造方法であって、
前記ダイボンドフィルムには、フィラーが配合されており、
前記フィラー配合量は、前記ダイボンドフィルムを構成する熱可塑性成分の重量をXとし、熱硬化性成分の重量をYとし、フィラーの重量をZとしたとき、Z/(X+Y+Z)が0.05以上0.7以下であり、
前記ダイシングフィルムと前記保護フィルムとの積層部分の波長400〜800nmにおける光線透過率をT1とし、前記ダイシングフィルムと前記ダイボンドフィルムと前記保護フィルムとの積層部分の波長400〜800nmにおける光線透過率をT2としたとき、下記式(A)にて示されるTが4以上であり、
前記半導体装置用フィルムの製造方法は、
ダイシングフィルムを作製する工程と、
ダイボンドフィルムを作製する工程と、
前記ダイボンドフィルムを、貼り付ける半導体ウェハの形状に合わせて打ち抜く工程と、
前記ダイシングフィルムに複数の前記ダイボンドフィルムを所定の間隔をおいて貼り付け、さらに、ダイボンドフィルム側を貼り合わせ面として保護フィルムを貼り付ける工程と、
波長400〜800nmの光線を照射し、得られる光線透過率に基づいてダイボンドフィルムの位置を検出する工程と、
検出したダイボンドフィルムの位置に基づいて、前記ダイシングフィルムを打ち抜く工程と
を具備することを特徴とする半導体装置用フィルムの製造方法。
T=100−((T2/T1)×100)・・・・・・式(A) - 前記光線透過率T1は、2〜80%であることを特徴とする請求項1に記載の半導体装置用フィルムの製造方法。
- 前記光線透過率T2は、0.1〜70%であることを特徴とする請求項1又は2に記載の半導体装置用フィルムの製造方法。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245191A (ja) * | 2009-04-02 | 2010-10-28 | Hitachi Chem Co Ltd | フィルム状接着剤 |
JP2011111530A (ja) * | 2009-11-26 | 2011-06-09 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
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US4961804A (en) | 1983-08-03 | 1990-10-09 | Investment Holding Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same |
IE55238B1 (en) | 1983-08-03 | 1990-07-04 | Nat Starch Chem Corp | Carrier film with conductive adhesive for dicing of semiconductor wafers |
JP2003197651A (ja) | 2001-12-21 | 2003-07-11 | Sumitomo Bakelite Co Ltd | ダイアタッチフィルム並びにそれを用いた半導体装置の製造方法及び半導体装置 |
JP4341343B2 (ja) | 2002-10-04 | 2009-10-07 | 日立化成工業株式会社 | 表面保護フィルム及びその製造方法 |
JP4275522B2 (ja) * | 2003-12-26 | 2009-06-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4690907B2 (ja) * | 2006-02-22 | 2011-06-01 | 古河電気工業株式会社 | レーザーダイシング用ダイシングダイボンドシート |
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JP2008021858A (ja) | 2006-07-13 | 2008-01-31 | Shin Etsu Chem Co Ltd | ダイシング・ダイボンド用接着フィルム |
JP4931125B2 (ja) | 2006-10-24 | 2012-05-16 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4975564B2 (ja) * | 2007-08-31 | 2012-07-11 | 日東電工株式会社 | 半導体装置製造用の接着シート、及びそれを用いた半導体装置の製造方法 |
JP4602450B2 (ja) * | 2008-12-02 | 2010-12-22 | 日東電工株式会社 | 半導体装置製造用フィルム及びその製造方法 |
JP5456441B2 (ja) * | 2009-01-30 | 2014-03-26 | 日東電工株式会社 | ダイシングテープ一体型ウエハ裏面保護フィルム |
JP5885325B2 (ja) | 2009-05-29 | 2016-03-15 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム |
KR101019755B1 (ko) | 2009-07-15 | 2011-03-08 | 제일모직주식회사 | 다이접착필름, 다이접착필름 릴 장치 및 이를 포함하는 마운팅 장치 |
JP5036887B1 (ja) * | 2011-03-11 | 2012-09-26 | 日東電工株式会社 | 保護フィルム付きダイシングフィルム |
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