CN102650045A - Film-forming device and producing method of film-forming substrate - Google Patents
Film-forming device and producing method of film-forming substrate Download PDFInfo
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- CN102650045A CN102650045A CN2012100389909A CN201210038990A CN102650045A CN 102650045 A CN102650045 A CN 102650045A CN 2012100389909 A CN2012100389909 A CN 2012100389909A CN 201210038990 A CN201210038990 A CN 201210038990A CN 102650045 A CN102650045 A CN 102650045A
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- 238000000151 deposition Methods 0.000 claims description 77
- 230000008021 deposition Effects 0.000 claims description 56
- 238000004519 manufacturing process Methods 0.000 claims description 28
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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Abstract
The invention provides a film-forming device, which can inhibit temperature difference in the substrate and ease stress on the substrate and a producing method of a film-forming substrate. A transmission roller which contacts with the substrate and transmits the substrate can be rotated in a clockwise and anticlockwise manner. While heating or cooling the substrate, the substrate can be moved back and forth. Accordingly, the position of the joint between the substrate and the transmission roller is changed, and it is prevented that only a specific part can contact with the transmission roller, and temperature difference in the substrate can be inhibited. Through moving the substrate back and forth, the heating/cooling of the substrate can be conducted without enlarging the arranging scope of a heating/cooling element. While rotating the transmission roller, the substrate is heated/cooled, and thereby the friction coefficient between the substrate and the transmission roller can be reduced, the joint between the substrate and the transmission roller can be moved to enable the telescoping of the substrate.
Description
Technical field
The present invention relates to a kind of film deposition system and substrate for film deposition method of manufacture.
Background technology
In the past, the film deposition system that for example in vacuum chamber, carried out the processing etc. of substrate carries out film forming through making film forming material through the evaporation coating device vapor deposition that is arranged in the chamber on substrate.In this film deposition system, the known device that has the rotation of being utilized on delivery direction transfer roller freely directly to transmit substrate.
Patent documentation 1: TOHKEMY 2010-147256 communique
As in the above-mentioned film deposition system, carrying out film forming heated substrates before, and at film forming postcooling substrate.In the technology,, therefore caused in the operation of heating or cooling base, conducting heat to transfer roller from the part that contacts with transfer roller of substrate owing to utilize transfer roller directly to transmit substrate in the past.Thus, produce temperature head in the part that contacts with transfer roller of substrate and discontiguous part, having thus deforms on substrate waits down to stress and uprises and cause the anxiety of fracture.
Summary of the invention
The present invention accomplishes in order to solve above-mentioned problem, and its purpose is to provide a kind of film deposition system and substrate for film deposition method of manufacture that suppresses the temperature head in the substrate and relax the stress that on substrate, produces.
Based on film deposition system of the present invention is a kind of film forming film deposition system that on substrate, carries out film forming material, it is characterized in that possessing: chamber, and importing has substrate; Heater is at this chamber internal heating substrate; Freely transfer roller of rotation is arranged in the chamber, with substrate contacts and transmit substrate; And control member, with positive rotation and the rotation that contrary rotation mode switches this transfer roller, substrate is come and gone when heating based on heater move.
According to this film deposition system; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits the rotation transfer roller freely of substrate; And heated substrates the time; Substrate come and go to be moved, and therefore, the contact of substrate and transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with transfer roller through moving the contact that heated substrate and temperature are lower than the transfer roller of substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge heater just can be carried out the heating of substrate.And therefore heated substrates in the time of owing to the rotation transfer roller, can reduce the frictional coefficient of substrate and transfer roller, and can allow the elongation because of the substrate that adds thermogenesis.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the elongation of substrate the time, also can reduce frictional coefficient through the rotation transfer roller.Therefore, be heated and when extending, when substrate because therefore the substrate skew can relax the thermal stresses that on substrate, produces.
And heater preferably has a plurality of well heaters that predetermined arranged spaced is extended and on delivery direction, separated to the direction of intersecting to the delivery direction with substrate.Thus, when can reduce well heater quantity, move the homogenizing of seeking temperature distribution through coming and going of substrate.
And control device preferably makes substrate come and go the amount of 60%～100% distance that moves the configuration space that is equivalent to well heater.According to this structure, especially can seek the homogenizing of temperature distribution.
In addition, be a kind of film forming film deposition system that on substrate, carries out film forming material based on film deposition system of the present invention, it is characterized in that possessing: cooling component, cooling base; Freely transfer roller of rotation is with substrate contacts and transmit substrate; And control member, with positive rotation and the rotation that contrary rotation mode switches transfer roller, substrate is come and gone when cooling off based on cooling component move.
According to this film deposition system; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits the rotation transfer roller freely of substrate; And cooling base the time; Substrate come and go to be moved, and therefore, the contact of substrate and transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with transfer roller through moving the contact of the transfer roller that the substrate that is cooled and temperature be lower than substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge cooling component just can be carried out the cooling of substrate.And therefore cooling base in the time of owing to the rotation transfer roller, can reduce the frictional coefficient of substrate and transfer roller, and can allow the contraction of the substrate that produces because of cooling.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the contraction of substrate the time, also can reduce frictional coefficient through the rotation transfer roller.Therefore, be cooled and when dwindling, when substrate because therefore the substrate skew can relax the tensile stress that on substrate, produces.
And control member preferably makes transfer roller revolve after the three-sixth turn, retrograde rotation 360 degree.Thus, when can make transfer roller carry out the operation of a circle positive rotation and the contrary rotation of a circle repeatedly, substrate is come and gone moves, and can suppress the interior temperature head of transfer roller, can also suppress with substrate that transfer roller contacts in temperature head.
In addition, be a kind of film forming film deposition system that on substrate, carries out film forming material based on film deposition system of the present invention, it is characterized in that possessing: chamber, importing has substrate; Heater is at this chamber internal heating substrate; Freely the 1st transfer roller of rotation is arranged in the chamber, with substrate contacts and transmit substrate; Heating transmits control member, with positive rotation and the rotation that contrary rotation mode switches the 1st transfer roller, substrate is come and gone when heating based on heater move; Cooling component, cooling base; Freely the 2nd transfer roller of rotation is with substrate contacts and transmit substrate; And cooling transmission control member, with positive rotation and the rotation that contrary rotation mode switches the 2nd transfer roller, it is mobile that substrate is come and gone when cooling off based on cooling component.
According to this film deposition system; Can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits rotation the 1st transfer roller freely of substrate; And heated substrates the time; Substrate come and go to be moved, and therefore, the contact of substrate and the 1st transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with the 1st transfer roller through moving the contact that heated substrate and temperature are lower than the 1st transfer roller of substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge heater just can be carried out the heating of substrate.And therefore heated substrates in the time of owing to rotation the 1st transfer roller, can reduce the frictional coefficient of substrate and the 1st transfer roller, and can allow the elongation because of the substrate that adds thermogenesis.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the elongation of substrate the time, also can reduce frictional coefficient through rotating the 1st transfer roller.Therefore, be heated and when extending, when substrate because therefore the substrate skew can relax the thermal stresses that on substrate, produces.
And; According to this film deposition system; Since can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits rotation the 2nd transfer roller freely of substrate, in the time of cooling base, it is mobile that substrate is come and gone; Therefore, the contact of substrate and the 2nd transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with the 2nd transfer roller through moving the contact of the 2nd transfer roller that the substrate that is cooled and temperature be lower than substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge cooling component just can be carried out the cooling of substrate.And therefore cooling base when rotating the 2nd transfer roller, can reduce the frictional coefficient of substrate and the 2nd transfer roller, and can allow the contraction of the substrate that produces because of cooling.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the contraction of substrate the time, also can reduce frictional coefficient through rotating the 2nd transfer roller.Therefore, be cooled and when dwindling, when substrate because therefore the substrate skew can relax the tensile stress that on substrate, produces.
In addition, be the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate based on substrate for film deposition method of manufacture of the present invention, it is characterized in that possessing: heating process has the chamber internal heating substrate of substrate in importing; And transmit operation, and utilize to be arranged in the chamber and to transmit substrate with the rotation transfer roller freely of substrate contacts, transmit in the operation, when heat, switch the rotation of transfer roller and substrate come and gone mobile with positive rotation and contrary rotation mode based on heating process.
According to this substrate for film deposition method of manufacture; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits the rotation transfer roller freely of substrate; And heated substrates the time; Substrate come and go to be moved, and therefore, the contact of substrate and transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with transfer roller through moving the contact that heated substrate and temperature are lower than the transfer roller of substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge heater just can be carried out the heating of substrate.And therefore heated substrates in the time of owing to the rotation transfer roller, can reduce the frictional coefficient of substrate and transfer roller, and can allow the elongation because of the substrate that adds thermogenesis.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the elongation of substrate the time, also can reduce frictional coefficient through the rotation transfer roller.Therefore, be heated and when extending, when substrate because therefore the substrate skew can relax the thermal stresses that on substrate, produces.
And, the preferred a plurality of heater heats substrates that utilize the direction of intersecting to extend and on delivery direction, separate predetermined arranged spaced in the heating process to delivery direction with substrate.Thus, when can reduce well heater quantity, move the homogenizing of seeking temperature distribution through coming and going of substrate.
And, transmit the amount of 60%～100% the distance that substrate is come and gone move the configuration space that is equivalent to well heater.According to this structure, especially can seek the homogenizing of temperature distribution.
In addition, be the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate based on substrate for film deposition method of manufacture of the present invention, it is characterized in that possessing: refrigerating work procedure, cooling base; And transmit operation, and utilize the rotation transfer roller freely with substrate contacts to transmit said substrate, transmit in the operation, when cool off, switch the rotation of transfer roller and substrate come and gone mobile with positive rotation and contrary rotation mode based on refrigerating work procedure.
According to this substrate for film deposition method of manufacture; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits the rotation transfer roller freely of substrate; And cooling base the time; Substrate come and go to be moved, and therefore, the contact of substrate and transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with transfer roller through moving the contact of the transfer roller that the substrate that is cooled and temperature be lower than substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge cooling component just can be carried out the cooling of substrate.And therefore cooling base in the time of owing to the rotation transfer roller, can reduce the frictional coefficient of substrate and transfer roller, and can allow the contraction of the substrate that produces because of cooling.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the contraction of substrate the time, also can reduce frictional coefficient through the rotation transfer roller.Therefore, be cooled and when dwindling, when substrate because therefore the substrate skew can relax the tensile stress that on substrate, produces.
And, in the transmission operation transfer roller is revolved after the three-sixth turn, retrograde rotation 360 degree.Thus, can make operation that transfer roller carries out a circle positive rotation and the contrary rotation of a circle repeatedly simultaneously, substrate come and gone move, and can suppress the interior temperature head of transfer roller, can also suppress with substrate that transfer roller contacts in temperature head.
In addition, be the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate based on substrate for film deposition method of manufacture of the present invention, it is characterized in that possessing: heating process has the chamber internal heating substrate of substrate in importing; The 1st transmits operation, utilizes to be arranged in the chamber and to transmit substrate with rotation the 1st transfer roller freely of substrate contacts; Refrigerating work procedure, cooling base; Reach the 2nd and transmit operation; Utilization transmits substrate with rotation the 2nd transfer roller freely of substrate contacts, and the 1st transmits in the operation, when heating based on heating process; Switch the rotation of the 1st transfer roller and make substrate round mobile with positive rotation and contrary rotation mode; The 2nd transmits in the operation, when cooling off based on refrigerating work procedure, switches the rotation of the 2nd transfer roller and makes substrate round mobile with positive rotation and contrary rotation mode.
According to this substrate for film deposition method of manufacture; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits rotation the 1st transfer roller freely of substrate; And heated substrates the time; Substrate come and go to be moved, and therefore, the contact of substrate and the 1st transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with the 1st transfer roller through moving the contact that heated substrate and temperature are lower than the 1st transfer roller of substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge heater just can be carried out the heating of substrate.And therefore heated substrates in the time of owing to rotation the 1st transfer roller, can reduce the frictional coefficient of substrate and the 1st transfer roller, and can allow the elongation because of the substrate that adds thermogenesis.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the elongation of substrate the time, also can reduce frictional coefficient through rotating the 1st transfer roller.Therefore, be heated and when extending, when substrate because therefore the substrate skew can relax the thermal stresses that on substrate, produces.
And; According to this substrate for film deposition method of manufacture; Because can be with positive rotation and contrary rotation mode switching and substrate contacts and the rotation that transmits rotation the 2nd transfer roller freely of substrate, and cooling base the time, it is mobile that substrate is come and gone; Therefore, the contact of substrate and the 2nd transfer roller can not be fixed and can change the position of contact.That is,, can avoid having only the privileged site of substrate to contact, and suppress the temperature head in the substrate with the 2nd transfer roller through moving the contact of the 2nd transfer roller that the substrate that is cooled and temperature be lower than substrate.And through coming and going moving substrate, the scope that is provided with that need not to enlarge cooling component just can be carried out the cooling of substrate.And therefore cooling base in the time of owing to rotation the 2nd transfer roller, can reduce the frictional coefficient of substrate and the 2nd transfer roller, and can allow the contraction of the substrate that produces because of cooling.Under transfer roller immobilized state,, substrate is squinted easily even frictional coefficient is higher and can't allow the contraction of substrate the time, also can reduce frictional coefficient through rotating the 2nd transfer roller.Therefore, be cooled and when dwindling, when substrate because therefore the substrate skew can relax the tensile stress that on substrate, produces.
The invention effect
According to film deposition system of the present invention and substrate for film deposition method of manufacture, owing to can suppress the temperature head in the substrate, and relax the stress that on substrate, produces, therefore can reduce the possibility of substrate fracture.
Description of drawings
Fig. 1 is the summary side-view of the related film deposition system of expression embodiment of the present invention.
Fig. 2 is the sectional view of the buffer chamber (heating is used) of the related film deposition system of embodiment of the present invention, is the figure of expression along the state of substrate delivery direction cut-out.
Fig. 3 is the sectional view of the buffer chamber (heating is used) of the related film deposition system of embodiment of the present invention, is the figure of the state of the orthogonal direction cut-out of expression edge and substrate delivery direction.
Fig. 4 amplifies the substrate in the presentation graphs 3, the figure of transfer roller.
Fig. 5 is the sectional view of the buffer chamber (cooling is used) of the related film deposition system of embodiment of the present invention, is the figure of expression along the state of substrate delivery direction cut-out.
Fig. 6 is the block structural diagram of the substrate transmit control unit of the related film deposition system of expression embodiment of the present invention.
Fig. 7 is the vertical view of substrate, is the figure of position of the contact of expression substrate and transfer roller.
Among the figure: 20-substrate transmit control unit, 91a-transfer roller, 92-well heater (heater), 93-cooling plate (cooling component), 100-film deposition system, 101-substrate, 121, the 125-transition chamber thereof, 122, the 124-buffer chamber, 123-film forming chamber.
Embodiment
With reference to accompanying drawing film deposition system involved in the present invention is described.In addition, " on ", the word of expression direction such as D score is based on state shown in the drawings and be word for simplicity.
(film deposition system)
Fig. 1 is the summary side-view of the related film deposition system of expression embodiment of the present invention.Film deposition system 100 shown in Figure 1 is a device of substrate (for example glass substrate) being implemented processing such as film forming.Film deposition system 100 is for to carry out film forming device through sputtering method; Be to produce plasma body under the thin argon gas atmosphere in a vacuum; Make the positive ion collision film forming material in the plasma body eject atoms metal, and it is attached to carry out film forming device on the substrate.
Be connected with the vacuum pump (not shown) that is used for inside is made as suitable pressure on each vacuum chamber 121～125.And, be provided with the vacuscope 95 (with reference to figure 2) that a plurality of (for example 2) are used to monitor the pressure in the chamber in each vacuum chamber 121～125.Be communicated with the Vacuum exhaust tube 96 that is connected with vacuum pump on each chamber 121～125, and be provided with vacuscope 95 at this Vacuum exhaust tube 96.
Transition chamber thereof 121 is for also being imported the chamber of the substrate of handling by atmosphere opening through the open switching lock 131 that is arranged on inlet side.The outlet side of transition chamber thereof 121 is connected with the inlet side of buffer chamber 122 through opening and closing lock 132.
Fig. 2 and Fig. 3 are the sectional views of the buffer chamber (heating is used) of the related film deposition system of expression embodiment of the present invention.Buffer chamber 122 is used chamber for the pressure adjustment that is communicated with transition chamber thereof 121 through the open switching lock 132 that is arranged on inlet side and import the substrate 101 through transition chamber thereof 121.The outlet side of buffer chamber 122 is connected with the inlet side of film forming chamber 123 through opening and closing lock 133.And, be provided with the well heater 92 that is used for heated substrates 101 in the buffer chamber 122.This well heater 92 is arranged on the top of substrate 101 for the upper surface of heated substrates 101.In buffer chamber 122, being heated into substrate temperature becomes for example about 200 ℃.Buffer chamber 122 is arranged on the leading portion of film forming chamber 123, and plays a role with chamber as the heating of heated substrates 101.
Fig. 5 is the sectional view of the buffer chamber (cooling is used) of the related film deposition system of expression embodiment of the present invention.Buffer chamber 124 is used chamber for being communicated with film forming chamber 123 through the open switching lock 134 that is arranged on inlet side and importing through the pressure adjustment of film forming chamber 123 film forming substrates 101.The outlet side of buffer chamber 124 is connected with the inlet side of transition chamber thereof 125 through opening and closing lock 135.And buffer chamber 124 is provided with the cooling plate 93 that is used for cooling base 101.This cooling plate is arranged on the top of substrate 101 for the upper surface of cooling base 101.Being cooled to substrate temperature in the buffer chamber 124 becomes for example about 120 ℃.Buffer chamber 124 is arranged on the back segment of film forming chamber 123, plays a role with chamber as the cooling of cooling base 101.In addition, can be the structure that cooling component is not set in buffer chamber 124.Also can be the structure of passing through atmosphere cooling (air cooling) substrate 101 under the atmospheric pressure environment after emitting from vacuum chamber.
Cooling plate 93 plays a role as the cooling component of cooling base 101.Cooling plate 93 is for example formed by copper coin and is tabular, is configured to relative with substrate 101.Cooling plate 93 is provided with the cooling tube (not shown) of circulation water coolant.The heat of substrate 101 is conducted heat to cooling plate 93, and the heat that is passed to cooling plate 93 is conducted heat to cooling tube, and cooling tube is through mobile water quench in pipe.Thus, cooling plate 93 is cooled and cooling base 101.
Transition chamber thereof 125 is for being communicated with and importing the chamber of the substrate 101 that passes through buffer chamber 124 with buffer chamber 124 through the open switching lock 135 that is arranged on inlet side.The outlet side of transition chamber thereof 125 is provided with and opens and closes lock 136, opens and closes lock 136 transition chamber thereofs 125 by atmosphere opening through opening.Carry out air cooling through atmosphere opening in the transition chamber thereof 125, and be cooled to below 100 ℃ in the moment of outside chamber, transmitting substrate 101.
(substrate transmit control unit)
Fig. 6 is the block structural diagram of the substrate transmit control unit of the related film deposition system of expression embodiment of the present invention.Film deposition system 100 possesses with positive rotation and contrary rotation mode and switches the rotation of transfer roller 91a and the substrate transmit control unit 20 of round moving substrate 101 buffer chamber 122,124 in.
Substrate transmit control unit 20 is made up of the CPU that carries out calculation process, the ROM that becomes storage part and RAM, input signal circuit, output signal circuit and power source circuit etc.Be stored in program construction drive control part 21A, the 21B of storage part in the substrate transmit control unit 20 through execution.
Drive control part 21A control is used to rotate CD-ROM drive motor (electro-motor) 22A that drives the transfer roller 91a that is arranged on buffer chamber 122.CD-ROM drive motor 22A is according to the instruction signal work from drive control part 21A output.Sense of rotation, the rotation amount of drive control part 21A control CD-ROM drive motor 22A, and control is arranged on positive rotation or contrary rotation and the angle of rotation of transfer roller (the 1st transfer roller) 91a of buffer chamber 122.Drive control part 21A plays a role as switching the rotation of transfer roller 91a with positive rotation and contrary rotation mode and when heating based on well heater 92, substrate 101 is come and gone (heating transmits) control member that moves.In addition, the positive rotation that is arranged on the transfer roller 91a of buffer chamber 122 is the rotation when pointing to film forming chamber chamber 123 sides and transmitting substrate 101.The contrary rotation that is arranged on the transfer roller 91a of buffer chamber 122 is the rotation when pointing to the opposition side of film forming chamber chamber 123 transmission substrate 101.
Drive control part 21A preferably makes substrate 101 come and go to move the amount of 60%～100% distance of the configuration space that is equivalent to well heater 92.For example, when the configuration space of well heater 92 adjacent on substrate delivery direction Y is 80mm, preferably relative to transfer roller 91a be provided with the position forwards, backwards direction move 80mm.In addition, drive control part 21A comes and goes in 60%～100% scope of configuration space that the distances that move may not necessarily be limited in well heater 92 exactly substrate 101.Also can break away from 60%～100% scope a little.
Drive control part 21B control is used to rotate CD-ROM drive motor (electro-motor) 22B that drives the transfer roller 91a that is arranged on buffer chamber 124.CD-ROM drive motor 22B is according to the instruction signal work from drive control part 21B output.Sense of rotation, the angle of rotation of drive control part 21B control CD-ROM drive motor 22B, and control is arranged on positive rotation or contrary rotation and the angle of rotation of transfer roller (the 2nd transfer roller) 91a of buffer chamber 124.Drive control part 21B plays a role as switching the rotation of transfer roller 91a with positive rotation and contrary rotation mode and when cooling off based on cooling plate 93, substrate 101 is come and gone (cooling transmits) control member that moves.In addition, the positive rotation that is arranged on the transfer roller 91a of buffer chamber 124 is the rotation when transmitting substrate 101 of the opposition side that points to film forming chamber chamber 123.The contrary rotation that is arranged on the transfer roller 91a of buffer chamber 124 is the rotation when pointing to film forming chamber chamber 123 sides transmission substrate 101.
Drive control part 21B preferably makes transfer roller 91a rotation 1 circle (360 degree) afterwards, and retrograde rotation 1 circle comes and goes substrate 101 and moves.For example, when the external diameter of transfer roller 91a is 60mm, preferably relative to transfer roller be provided with the position forwards, backwards direction move 180mm.In addition, the rotation amount of drive control part 21B rotation transfer roller 91a may not necessarily be made as 1 circle exactly.Rotation amount can also can be less than 1 circle a little a little more than 1 circle.
(method of manufacture of substrate for film deposition)
Then, the method for manufacture to the related substrate for film deposition of embodiment of the present invention describes.In this embodiment, the method for manufacture of the substrate for film deposition of utilizing film deposition system shown in Figure 1 100 is described.This method of manufacture possesses heating process (the 1st transmits operation), film formation process and refrigerating work procedure (the 2nd transmits operation).
(transmission operation)
At first, substrate 101 is directed in the transition chamber thereof 121.Be closed switching lock 131,132 in the transition chamber thereof 121 and be sealed state, and be decompressed to predetermined pressure.Substrate transmits in transition chamber thereof 121 and is directed in the buffer chamber 122 of adjacency.
(heating process, the 1st transmits operation)
In the heating process, the buffer chamber 122 internal heating substrates 101 of substrate 101 are arranged in importing.The 1st transmits in the operation (transmission operation), and when heating based on heating process, positive rotation or contrary rotation (the 1st) transfer roller 91a come and go substrate 101 and move.For example, in buffer chamber 122, before importing substrate 101, be heated to predetermined temperature.
(film formation process)
Be before the film forming chamber 123 inherent importing substrates 101 and be suitable for film forming decompression state.If substrate 101 is directed in the film forming chamber 123, then is closed in it and opens and closes lock 133,134 and be sealed state.And, be the state of keeping substrate temperature through well heater 92 heating in the film forming chamber 123.And, carrying out the film forming processing on the substrate 101 and film forming metal film (thin film layer) (film formation process) on substrate 101.
(refrigerating work procedure, the 2nd transmits operation)
In the refrigerating work procedure, the buffer chamber 124 internal cooling substrates 101 of substrate 101 are arranged in importing.The 2nd transmits in the operation (transmission operation), and when cooling off based on refrigerating work procedure, positive rotation or contrary rotation (the 2nd) transfer roller 91a come and go substrate 101 and move.For example, the buffer chamber 124 inherent substrates 101 that import are cooled to predetermined temperature before.In addition, refrigerating work procedure can not carried out in chamber yet.
The open lock 136 that opens and closes comes cooling base 101 through atmosphere opening in the transition chamber thereof 125.After the cooling base 101, substrate 101 transmits in transition chamber thereof 125, and outside transition chamber thereof 125, derives.
And, through being come and gone, moves by substrate 101, and the scope that is provided with that need not to enlarge well heater 92 just can heated substrates 101.And therefore heated substrates 101 in the time of owing to rotation transfer roller 91a, can reduce the frictional coefficient of substrate 101 and transfer roller 91a, and can allow the elongation of substrate 101 on width X because of adding thermogenesis.Under transfer roller 91a immobilized state, frictional coefficient is higher and can't allow and the elongation of substrate 101 cause the central authorities significantly deflection of substrate 101 at width X.Therefore, can reduce frictional coefficient, substrate 101 is squinted to width X easily through rotation transfer roller 91a.Therefore, when substrate 101 is heated and when width X extends, squint laterally in the end of the width X of substrate 101, therefore can relax substrate 101 because of the deflection of force of compression to the thickness of slab direction.Its result, near the substrate 101 that can reduce substrate 101 fracture or deflection and other assemblies (for example be arranged on the path of transmitting substrate 101 reflector) possibility of interference.
And; In the heating process of the heater of film deposition system 100 and substrate for film deposition method of manufacture; The direction X that utilization intersects to the delivery direction Y with substrate 101 extends and on delivery direction Y, separates a plurality of well heaters 92 heated substrates 101 of predetermined space P configuration; In substrate transmit control unit 20 and transmission operation; Owing to substrate 101 is come and gone move the amount of roughly 60%～roughly 100% the distance of the configuration space P that is equivalent to well heater 92, therefore can be suppressed at the temperature head in the substrate 101 on the delivery direction Y of substrate 101, and the quantity that is provided with that can reduce well heater 92.For example, compare, can well heater 92 be reduced to 50% radical with making the static device in the past that heats of substrate.
And; Film deposition system 100 and substrate for film deposition method of manufacture according to this embodiment; Owing to can switch the rotation that contacts and transmit the rotation transfer roller 91a freely of substrate 101 with substrate 101 with contrary rotation mode with positive rotation; And substrate 101 is come and gone cooling base 101 time to move, so the contact of substrate 101 and transfer roller 91a can not be fixed in (with reference to figure 7) and can change the position of contact.That is,, can avoid having only the privileged site of substrate 101 contact with transfer roller 91a through moving the contact that the substrate that is cooled 101 and temperature are lower than the transfer roller 91a of substrate 101, and the interior temperature head of inhibition substrate 101.Can dwindle the temperature head of part that contacts with transfer roller 91a and the part that does not contact with transfer roller 91a.
And, through being come and gone, moves by substrate 101, and the scope that is provided with that need not to enlarge cooling plate 93 just can cooling base 101.And therefore cooling base 101 in the time of rotation transfer roller 91a, can reduce the frictional coefficient of substrate 101 and transfer roller 91a, and can allow the contraction of substrate 101 on width X that produces because of cooling.Under transfer roller 91a immobilized state,, substrate 101 is squinted easily to width X even frictional coefficient is higher and can't allow the contraction of substrate the time, also can reduce frictional coefficient through rotation transfer roller 91a.Therefore, when dwindling,, therefore can relax the tensile stress that on substrate 101, produces owing to squint to the inside in the end of the width X of substrate 101 when substrate 101 coolings.Its result can reduce the possibility that substrate 101 ruptures.
And; The substrate transmit control unit 20 of film deposition system 100 revolves after the three-sixth turn transfer roller 91a, retrograde rotation 360 degree, therefore; When can make transfer roller 91a carry out the operation of a circle positive rotation and the contrary rotation of a circle repeatedly; Substrate 101 is come and gone move, and can suppress the temperature head of transfer roller 91a on side face, the temperature head in the substrate 101 that can also suppress to contact with transfer roller 91a.
And, transmit in the operation in (the 2nd) of substrate for film deposition method of manufacture, because transfer roller 91a is revolved after the three-sixth turn; Retrograde rotation 360 degree; Therefore, when can make transfer roller 91a carry out the operation of a circle positive rotation and the contrary rotation of a circle repeatedly, substrate 101 is come and gone move; And can suppress the temperature head of transfer roller 91a on side face, the temperature head in the substrate 101 that can also suppress to contact with transfer roller 91a.
More than, according to the clear specifically the present invention of its embodiment, but the present invention is not limited to above-mentioned embodiment.In the above-mentioned embodiment; Switch the rotation that is arranged on the transfer roller 91a in the buffer chamber 122 and make substrate 101 round moving with positive rotation and contrary rotation mode, be arranged on the rotation of the transfer roller 91a in other chambers and make substrate 101 round moving but also can switch with positive rotation and contrary rotation mode.For example, in transition chamber thereof 121, substrate 101 is come and gone move.
And; In the above-mentioned embodiment; Switch the rotation that is arranged on the transfer roller 91a in the buffer chamber 124 and make substrate 101 round moving with positive rotation and contrary rotation mode, but can move through being arranged on the rotation of the transfer roller 91a in other chambers and substrate 101 is come and gone with positive rotation and contrary rotation mode switching.
And, in the above-mentioned embodiment, utilize the lamp formula well heater that extends to the width X of substrate 101 to heat as well heater 92, but also can utilize other heaters (for example carbon heater) heated substrates 101.And the direction that well heater 92 extends is not limited to the width X of substrate 101, the heater heats substrate 101 that extends to delivery direction Y capable of using.And also can be the structure of the lower surface of heated substrates 101.
And, in the above-mentioned embodiment, utilize cooling plate 93 cooling bases 101, but also can utilize other cooling component cooling bases 101.And, also can be the structure of the lower surface of cooling base 101.
And; In the above-mentioned embodiment, during heated substrates, substrate 101 is come and gone move the amount of roughly 60%～roughly 100% the distance of the configuration space P that is equivalent to well heater 92; But substrate 101 comes and goes the distance that moves and can be below 60% of P at interval, also can be at interval more than the P.
And; In the above-mentioned embodiment, during cooling base, transfer roller 91a is revolved after the three-sixth turn; Retrograde rotation 360 degree; But the angle of rotation of transfer roller 91a is not limited to 360 degree, can come and go moving substrate 101 by the angle of rotation less than a circle, also can come and go moving substrate 101 by the angle of rotation greater than 1 circle.
And the one-tenth embrane method in film forming chamber and the film formation process is not limited to sputtering method, also can use other and become embrane methods (for example ion plating method etc.).
And, only also can be when heating or come and go the structure of moving substrate 101 during cooling.
Claims (12)
1. film deposition system, it carries out film forming material on substrate film forming is characterized in that possessing:
Chamber, importing has said substrate;
Heater is at the said substrate of said chamber internal heating;
Freely transfer roller of rotation is arranged in the said chamber, with said substrate contacts and transmit said substrate; And
Control member with positive rotation and the rotation that contrary rotation mode switches said transfer roller, comes and goes said substrate and moves when heating based on said heater.
2. film deposition system as claimed in claim 1 is characterized in that,
Said heater has a plurality of well heaters that extend and on said delivery direction, separate predetermined arranged spaced to the direction that the delivery direction with said substrate intersects.
3. film deposition system as claimed in claim 2 is characterized in that,
Said control member come and go to move said substrate to be equivalent to the amount of 60%～100% distance of the configuration space of said well heater.
4. film deposition system, it carries out film forming material on substrate film forming is characterized in that possessing:
Cooling component cools off said substrate;
Freely transfer roller of rotation is with said substrate contacts and transmit said substrate; And
Control member with positive rotation and the rotation that contrary rotation mode switches said transfer roller, comes and goes said substrate and moves when cooling off based on said cooling component.
5. film deposition system as claimed in claim 4 is characterized in that,
Said control member revolves after the three-sixth turn said transfer roller, retrograde rotation 360 degree.
6. film deposition system, it carries out film forming material on substrate film forming is characterized in that possessing:
Chamber, importing has said substrate;
Heater is at the said substrate of said chamber internal heating;
Freely the 1st transfer roller of rotation is arranged in the said chamber, with said substrate contacts and transmit said substrate;
Heating transmits control member, with positive rotation and the rotation that contrary rotation mode switches said the 1st transfer roller, said substrate is come and gone when heating based on said heater move;
Cooling component cools off said substrate;
Freely the 2nd transfer roller of rotation is with said substrate contacts and transmit said substrate; And
Cooling transmits control member, with positive rotation and the rotation that contrary rotation mode switches said the 2nd transfer roller, said substrate is come and gone when cooling off based on said cooling component move.
7. substrate for film deposition method of manufacture, it is the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate, it is characterized in that possessing:
Heating process has the said substrate of chamber internal heating of said substrate in importing; And
Transmit operation, utilize to be arranged in the said chamber and to transmit said substrate with the rotation transfer roller freely of said substrate contacts,
In the said transmission operation, when heating, switch the rotation of said transfer roller and said substrate come and gone mobile with positive rotation and contrary rotation mode based on said heating process.
8. substrate for film deposition method of manufacture as claimed in claim 7 is characterized in that,
In the said heating process, utilize a plurality of well heaters that extend and on said delivery direction, separate predetermined arranged spaced to the direction that the delivery direction with said substrate intersects, said substrate is heated.
9. substrate for film deposition method of manufacture as claimed in claim 8 is characterized in that,
In the said transmission operation, said substrate come and go to be moved be equivalent to the amount of 60%～100% distance of the configuration space of said well heater.
10. substrate for film deposition method of manufacture, it is the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate, it is characterized in that possessing:
Refrigerating work procedure cools off said substrate; And
Transmit operation, utilization transmits said substrate with the rotation transfer roller freely of said substrate contacts,
In the said transmission operation, when cooling off, switch the rotation of said transfer roller and said substrate come and gone mobile with positive rotation and contrary rotation mode based on said refrigerating work procedure.
11. substrate for film deposition method of manufacture as claimed in claim 10 is characterized in that,
In the said transmission operation, said transfer roller is revolved after the three-sixth turn, retrograde rotation 360 degree.
12. a substrate for film deposition method of manufacture, it is the method that manufactures the substrate for film deposition that the mould material film forming obtains on substrate, it is characterized in that possessing:
Heating process has the said substrate of chamber internal heating of said substrate in importing;
The 1st transmits operation, utilizes to be arranged in the said chamber and to transmit said substrate with rotation the 1st transfer roller freely of said substrate contacts;
Refrigerating work procedure cools off said substrate; And
The 2nd transmits operation, and utilization transmits said substrate with rotation the 2nd transfer roller freely of said substrate contacts,
The said the 1st transmits in the operation, and when heating, with switching the rotation of said the 1st transfer roller said substrate is come and gone with positive rotation and move against rotation mode based on said heating process,
The said the 2nd transmits in the operation, when cooling off based on said refrigerating work procedure, with switching the rotation of said the 2nd transfer roller against rotation mode said substrate is come and gone with positive rotation and moves.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011040268A JP2012177151A (en) | 2011-02-25 | 2011-02-25 | Film deposition device, and method for producing film deposition substrate |
| JP040268/2011 | 2011-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102650045A true CN102650045A (en) | 2012-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100389909A Pending CN102650045A (en) | 2011-02-25 | 2012-02-20 | Film-forming device and producing method of film-forming substrate |
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| Country | Link |
|---|---|
| JP (1) | JP2012177151A (en) |
| KR (1) | KR20120098444A (en) |
| CN (1) | CN102650045A (en) |
| TW (1) | TWI465594B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10140351A (en) * | 1996-11-05 | 1998-05-26 | Kobe Steel Ltd | Inline type vacuum film forming device |
| JP2008053454A (en) * | 2006-08-24 | 2008-03-06 | Dainippon Printing Co Ltd | Baking apparatus and baking method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59199036A (en) * | 1983-04-26 | 1984-11-12 | Fuji Electric Corp Res & Dev Ltd | Device for forming thin film |
| JP3157108B2 (en) * | 1996-08-26 | 2001-04-16 | 株式会社ノリタケカンパニーリミテド | Method and apparatus for firing a substrate containing a film forming material |
| JP4417221B2 (en) * | 2004-10-18 | 2010-02-17 | 株式会社フューチャービジョン | Substrate cooling device |
| JP4576370B2 (en) * | 2006-10-20 | 2010-11-04 | 三菱重工業株式会社 | Vapor deposition apparatus and vapor deposition method |
| JP4761326B2 (en) * | 2010-01-15 | 2011-08-31 | シャープ株式会社 | Thin film forming apparatus system and thin film forming method |
-
2011
- 2011-02-25 JP JP2011040268A patent/JP2012177151A/en active Pending
-
2012
- 2012-02-20 CN CN2012100389909A patent/CN102650045A/en active Pending
- 2012-02-22 TW TW101105866A patent/TWI465594B/en not_active IP Right Cessation
- 2012-02-22 KR KR1020120017727A patent/KR20120098444A/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10140351A (en) * | 1996-11-05 | 1998-05-26 | Kobe Steel Ltd | Inline type vacuum film forming device |
| JP2008053454A (en) * | 2006-08-24 | 2008-03-06 | Dainippon Printing Co Ltd | Baking apparatus and baking method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012177151A (en) | 2012-09-13 |
| TWI465594B (en) | 2014-12-21 |
| KR20120098444A (en) | 2012-09-05 |
| TW201241196A (en) | 2012-10-16 |
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Application publication date: 20120829 |